Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MMBD1204 | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBD1205 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2897 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD1401 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2724 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD1403 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: double series Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBD1404 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1844 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD1404A | ONSEMI |
![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Max. forward voltage: 1.25V Max. forward impulse current: 2A Max. off-state voltage: 175V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.6A Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBD1405 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 728 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD1405A | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBD1501A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Type of diode: switching Capacitance: 4pF Leakage current: 5µA Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3105 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD1503A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Kind of package: reel; tape Mounting: SMD Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Case: SOT23 Semiconductor structure: double series Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3366 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD1503A-D87Z | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MMBD1504A | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBD1505A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Case: SOT23 Kind of package: reel; tape Semiconductor structure: common anode; double Anzahl je Verpackung: 1 Stücke |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD2837LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBD301LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBD330T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBD352WT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBD4148CA | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Leakage current: 5µA Max. forward impulse current: 2A Max. forward voltage: 1V Capacitance: 4pF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 543 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD4148CC | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 4pF Reverse recovery time: 4ns Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. off-state voltage: 100V Semiconductor structure: common cathode; double Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1125 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD4148se | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Max. forward impulse current: 2A Capacitance: 4pF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3586 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD452LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBD6050LT1G | ONSEMI |
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auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD6100LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBD7000LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: double series Case: SOT23 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5845 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD701LT1G | ONSEMI |
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auf Bestellung 2415 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBD717LT1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBD770T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBD914LT1G | ONSEMI |
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auf Bestellung 7015 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF0201NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 1.4Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBF170 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 1.2Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2509 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF170LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5650 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF2201NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.15W Case: SC70; SOT323 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.4nC Pulsed drain current: 750A On-state resistance: 1Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF4117 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA Mounting: SMD Type of transistor: N-JFET Kind of package: reel; tape Case: SOT23 Polarisation: unipolar Gate-source voltage: -40V Drain current: 30µA Gate current: 50mA Power dissipation: 0.225W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3087 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF4391LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 30Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 766 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF4392LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 60Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2050 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF4393LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 100Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1825 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF4416 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2802 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF4416A | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2810 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF5103 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF5457 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 3mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2921 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF5484 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 1mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2935 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF5485 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 4mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2936 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBF5486 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 12000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBFJ108 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 80mA Power dissipation: 0.35W Case: SuperSOT-3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 8Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1598 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ110 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 18Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBFJ111 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 30Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 631 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ112 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 5mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -35V On-state resistance: 50Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4704 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ113 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -35V On-state resistance: 100Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 628 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ175LT1G | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Polarisation: unipolar Drain current: 7mA Gate current: 50mA Power dissipation: 0.225W Gate-source voltage: 30V On-state resistance: 125Ω Kind of package: reel; tape Type of transistor: P-JFET Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1885 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ176 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V On-state resistance: 250Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ177LT1G | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA On-state resistance: 300Ω Type of transistor: P-JFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain current: 1.5mA Gate current: 50mA Power dissipation: 0.225W Gate-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11300 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ201 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA Case: SOT23 Type of transistor: N-JFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -40V Drain current: 200µA Gate current: 50mA Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3700 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ202 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 900µA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2005 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ270 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3227 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ309LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA Mounting: SMD Type of transistor: N-JFET Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: -25V Gate current: 10mA Drain current: 30mA Power dissipation: 0.225W Drain-source voltage: 25V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2891 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFJ310LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 24mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2409 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBFU310LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 24mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBT2222ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5361 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBT2222ALT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBT2222ATT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.6A Power dissipation: 0.15W Collector-emitter voltage: 40V Current gain: 100 Frequency: 300MHz Polarisation: bipolar Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MMBD1204 |
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Hersteller: ONSEMI
MMBD1204 SMD universal diodes
MMBD1204 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1205 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2897 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
432+ | 0.17 EUR |
627+ | 0.11 EUR |
736+ | 0.097 EUR |
1205+ | 0.059 EUR |
1276+ | 0.056 EUR |
3000+ | 0.054 EUR |
MMBD1401 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2724 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
575+ | 0.12 EUR |
691+ | 0.1 EUR |
757+ | 0.095 EUR |
957+ | 0.075 EUR |
1013+ | 0.071 EUR |
MMBD1403 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1404 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1844 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
374+ | 0.19 EUR |
407+ | 0.18 EUR |
528+ | 0.14 EUR |
596+ | 0.12 EUR |
983+ | 0.073 EUR |
1040+ | 0.069 EUR |
MMBD1404A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1405 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 728 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
343+ | 0.21 EUR |
454+ | 0.16 EUR |
516+ | 0.14 EUR |
728+ | 0.099 EUR |
MMBD1405A |
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Hersteller: ONSEMI
MMBD1405A SMD universal diodes
MMBD1405A SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1501A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Leakage current: 5µA
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Leakage current: 5µA
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3105 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
481+ | 0.15 EUR |
574+ | 0.12 EUR |
669+ | 0.11 EUR |
781+ | 0.092 EUR |
908+ | 0.079 EUR |
1299+ | 0.055 EUR |
MMBD1503A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3366 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
293+ | 0.24 EUR |
426+ | 0.17 EUR |
501+ | 0.14 EUR |
887+ | 0.081 EUR |
939+ | 0.076 EUR |
2000+ | 0.073 EUR |
MMBD1503A-D87Z |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1504A |
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Hersteller: ONSEMI
MMBD1504A SMD universal diodes
MMBD1504A SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1505A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
86+ | 0.83 EUR |
100+ | 0.72 EUR |
209+ | 0.34 EUR |
500+ | 0.14 EUR |
574+ | 0.12 EUR |
MMBD2837LT1G |
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Hersteller: ONSEMI
MMBD2837LT1G SMD universal diodes
MMBD2837LT1G SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD301LT1G |
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Hersteller: ONSEMI
MMBD301LT1G SMD Schottky diodes
MMBD301LT1G SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD330T1G |
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Hersteller: ONSEMI
MMBD330T1G SMD Schottky diodes
MMBD330T1G SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD352WT1G |
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Hersteller: ONSEMI
MMBD352WT1G SMD Schottky diodes
MMBD352WT1G SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD4148CA |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 5µA
Max. forward impulse current: 2A
Max. forward voltage: 1V
Capacitance: 4pF
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 5µA
Max. forward impulse current: 2A
Max. forward voltage: 1V
Capacitance: 4pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 543 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
463+ | 0.15 EUR |
500+ | 0.14 EUR |
543+ | 0.13 EUR |
670+ | 0.11 EUR |
MMBD4148CC |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 4pF
Reverse recovery time: 4ns
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1125 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
496+ | 0.14 EUR |
662+ | 0.11 EUR |
751+ | 0.095 EUR |
1125+ | 0.063 EUR |
6000+ | 0.052 EUR |
MMBD4148se |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Max. forward impulse current: 2A
Capacitance: 4pF
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Max. forward impulse current: 2A
Capacitance: 4pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3586 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
596+ | 0.12 EUR |
713+ | 0.1 EUR |
779+ | 0.092 EUR |
887+ | 0.081 EUR |
1254+ | 0.057 EUR |
1327+ | 0.054 EUR |
MMBD452LT1G |
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Hersteller: ONSEMI
MMBD452LT1G SMD Schottky diodes
MMBD452LT1G SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD6050LT1G |
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Hersteller: ONSEMI
MMBD6050LT1G SMD universal diodes
MMBD6050LT1G SMD universal diodes
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
577+ | 0.12 EUR |
2400+ | 0.03 EUR |
6000+ | 0.026 EUR |
MMBD6100LT1G |
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Hersteller: ONSEMI
MMBD6100LT1G SMD universal diodes
MMBD6100LT1G SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD7000LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5845 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
633+ | 0.11 EUR |
977+ | 0.073 EUR |
1197+ | 0.06 EUR |
1859+ | 0.038 EUR |
2841+ | 0.025 EUR |
3013+ | 0.024 EUR |
MMBD701LT1G |
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Hersteller: ONSEMI
MMBD701LT1G SMD Schottky diodes
MMBD701LT1G SMD Schottky diodes
auf Bestellung 2415 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
251+ | 0.29 EUR |
940+ | 0.076 EUR |
1480+ | 0.048 EUR |
1563+ | 0.046 EUR |
MMBD717LT1G |
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Hersteller: ONSEMI
MMBD717LT1G SMD Schottky diodes
MMBD717LT1G SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD770T1G |
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Hersteller: ONSEMI
MMBD770T1G SMD Schottky diodes
MMBD770T1G SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD914LT1G |
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Hersteller: ONSEMI
MMBD914LT1G SMD universal diodes
MMBD914LT1G SMD universal diodes
auf Bestellung 7015 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
2959+ | 0.024 EUR |
3125+ | 0.023 EUR |
MMBF0201NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 1.4Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 1.4Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBF170 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 1.2Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 1.2Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2509 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
371+ | 0.19 EUR |
538+ | 0.13 EUR |
631+ | 0.11 EUR |
1021+ | 0.07 EUR |
1080+ | 0.066 EUR |
MMBF170LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5650 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
358+ | 0.2 EUR |
467+ | 0.15 EUR |
562+ | 0.13 EUR |
1194+ | 0.06 EUR |
1263+ | 0.057 EUR |
3000+ | 0.055 EUR |
MMBF2201NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Pulsed drain current: 750A
On-state resistance: 1Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Pulsed drain current: 750A
On-state resistance: 1Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
232+ | 0.31 EUR |
262+ | 0.27 EUR |
371+ | 0.19 EUR |
432+ | 0.17 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
MMBF4117 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 30µA
Gate current: 50mA
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 30µA
Gate current: 50mA
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3087 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
152+ | 0.47 EUR |
191+ | 0.37 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
MMBF4391LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 766 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
179+ | 0.4 EUR |
257+ | 0.28 EUR |
304+ | 0.24 EUR |
353+ | 0.2 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
MMBF4392LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2050 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
230+ | 0.31 EUR |
305+ | 0.23 EUR |
345+ | 0.21 EUR |
486+ | 0.15 EUR |
511+ | 0.14 EUR |
1500+ | 0.13 EUR |
MMBF4393LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 100Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 100Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1825 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
435+ | 0.16 EUR |
548+ | 0.13 EUR |
600+ | 0.12 EUR |
867+ | 0.083 EUR |
916+ | 0.078 EUR |
9000+ | 0.076 EUR |
MMBF4416 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2802 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
459+ | 0.16 EUR |
491+ | 0.15 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
MMBF4416A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2810 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
550+ | 0.13 EUR |
589+ | 0.12 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
MMBF5103 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
241+ | 0.3 EUR |
295+ | 0.24 EUR |
397+ | 0.18 EUR |
486+ | 0.15 EUR |
511+ | 0.14 EUR |
532+ | 0.13 EUR |
MMBF5457 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2921 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
300+ | 0.24 EUR |
388+ | 0.18 EUR |
410+ | 0.17 EUR |
MMBF5484 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2935 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
468+ | 0.15 EUR |
500+ | 0.14 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
MMBF5485 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2936 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
459+ | 0.16 EUR |
491+ | 0.15 EUR |
596+ | 0.12 EUR |
625+ | 0.11 EUR |
MMBF5486 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 12000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 12000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBFJ108 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1598 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
167+ | 0.43 EUR |
243+ | 0.29 EUR |
258+ | 0.28 EUR |
500+ | 0.27 EUR |
MMBFJ110 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBFJ111 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 631 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
184+ | 0.39 EUR |
252+ | 0.28 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
MMBFJ112 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
On-state resistance: 50Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
On-state resistance: 50Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4704 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
225+ | 0.32 EUR |
290+ | 0.25 EUR |
350+ | 0.2 EUR |
417+ | 0.17 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
MMBFJ113 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
240+ | 0.3 EUR |
298+ | 0.24 EUR |
353+ | 0.2 EUR |
410+ | 0.17 EUR |
589+ | 0.12 EUR |
MMBFJ175LT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1885 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
194+ | 0.37 EUR |
256+ | 0.28 EUR |
319+ | 0.22 EUR |
394+ | 0.18 EUR |
575+ | 0.12 EUR |
MMBFJ176 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.27 EUR |
66+ | 1.09 EUR |
182+ | 0.39 EUR |
1000+ | 0.23 EUR |
MMBFJ177LT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain current: 1.5mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain current: 1.5mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
222+ | 0.32 EUR |
250+ | 0.29 EUR |
334+ | 0.21 EUR |
379+ | 0.19 EUR |
500+ | 0.14 EUR |
MMBFJ201 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 200µA
Gate current: 50mA
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 200µA
Gate current: 50mA
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3700 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
188+ | 0.38 EUR |
253+ | 0.28 EUR |
290+ | 0.25 EUR |
327+ | 0.22 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
MMBFJ202 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 900µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 900µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2005 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
175+ | 0.41 EUR |
207+ | 0.35 EUR |
348+ | 0.21 EUR |
432+ | 0.17 EUR |
506+ | 0.14 EUR |
532+ | 0.13 EUR |
MMBFJ270 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3227 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
139+ | 0.52 EUR |
191+ | 0.37 EUR |
315+ | 0.23 EUR |
332+ | 0.22 EUR |
1000+ | 0.21 EUR |
MMBFJ309LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 30mA
Power dissipation: 0.225W
Drain-source voltage: 25V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 30mA
Power dissipation: 0.225W
Drain-source voltage: 25V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2891 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
281+ | 0.25 EUR |
315+ | 0.23 EUR |
368+ | 0.19 EUR |
410+ | 0.17 EUR |
451+ | 0.16 EUR |
582+ | 0.12 EUR |
MMBFJ310LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2409 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
226+ | 0.32 EUR |
275+ | 0.26 EUR |
363+ | 0.2 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
MMBFU310LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT2222ALT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5361 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
1220+ | 0.059 EUR |
1812+ | 0.039 EUR |
2305+ | 0.031 EUR |
2552+ | 0.028 EUR |
5209+ | 0.014 EUR |
5361+ | 0.013 EUR |
MMBT2222ALT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT2222ATT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.6A
Power dissipation: 0.15W
Collector-emitter voltage: 40V
Current gain: 100
Frequency: 300MHz
Polarisation: bipolar
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.6A
Power dissipation: 0.15W
Collector-emitter voltage: 40V
Current gain: 100
Frequency: 300MHz
Polarisation: bipolar
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH