| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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FSA1256L8X | onsemi |
 Description: IC ANALOG SWITCH 8MICROPAK |
auf Bestellung 25874 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7SV74L8X | onsemi |
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK Packaging: Cut Tape (CT) Number of Bits per Element: 1 Part Status: Obsolete Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF Supplier Device Package: 8-MicroPak™ Input Capacitance: 2 pF Clock Frequency: 200 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Current - Quiescent (Iq): 900 µA Number of Elements: 1 Mounting Type: Surface Mount Output Type: Complementary Package / Case: 8-UFQFN Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Set(Preset) and Reset |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NC7NZ17L8X | onsemi |
Description: IC BUFF 1.65V 8-MICROPAK Packaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-MicroPak™ |
auf Bestellung 2477 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7WZ86L8X | onsemi |
Description: IC GATE XOR 2CH 2-INP 8MICROPAK Current - Quiescent (Max): 1 µA Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF Supplier Device Package: 8-MicroPak™ Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 8-UFQFN Packaging: Cut Tape (CT) |
auf Bestellung 9750 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7SV125L6X | onsemi |
Description: IC BUF NON-INVERT 3.6V 6MICROPAK Part Status: Obsolete Supplier Device Package: 6-MicroPak Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 6-UFDFN Packaging: Cut Tape (CT) |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7WP32K8X | onsemi |
Description: IC GATE OR 2CH 2-INP US8 Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: US8 Input Logic Level - High: 1.6V ~ 2.1V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 900 nA |
auf Bestellung 606 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME1034CZT | onsemi |
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
auf Bestellung 2020 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1039UCX | onsemi |
Description: IC PWR SWITCH LOAD MGMT 6WLCSP Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Rds On (Typ): 20mOhm Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Supplier Device Package: 6-WLCSP (0.96x1.66) Part Status: Last Time Buy |
auf Bestellung 18637 Stücke: Lieferzeit 10-14 Tag (e) |
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74VCX245BQX | onsemi |
Description: IC TXRX NON-INVERT 3.6V 20DQFN Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-WFQFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: 20-DQFN (2.5x4.5) Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) |
auf Bestellung 3017 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7NZ34L8X | onsemi |
Description: IC BUF NON-INVERT 5.5V 8MICROPAK Supplier Device Package: 8-MicroPak™ Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 3 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-UFQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74LCX04BQX | onsemi |
Description: IC INVERTER 6CH 1-INP 14DQFN Current - Quiescent (Max): 10 µA Number of Circuits: 6 Part Status: Active Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-DQFN (3x2.5) Number of Inputs: 1 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5672 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6310P | onsemi |
Description: MOSFET 2P-CH 20V 2.2A SSOT6 FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.2A Drain to Source Voltage (Vdss): 20V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA |
auf Bestellung 5197 Stücke: Lieferzeit 10-14 Tag (e) |
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NC7SB3157L6X | onsemi |
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-MicroPak Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Last Time Buy Number of Circuits: 1 |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN4931IP5X | onsemi |
Description: IC OPAMP VFB 1 CIRCUIT SC70-5 Voltage - Supply Span (Max): 5.25 V Voltage - Supply Span (Min): 2.3 V -3db Bandwidth: 3.7 MHz Current - Output / Channel: 33 mA Number of Circuits: 1 Supplier Device Package: SC-70-5 Current - Input Bias: 5 pA Gain Bandwidth Product: 3.7 MHz Slew Rate: 3V/µs Output Type: Rail-to-Rail Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Current - Supply: 200µA Operating Temperature: -40°C ~ 85°C Amplifier Type: Voltage Feedback Mounting Type: Surface Mount |
auf Bestellung 98988 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN2558MPX | onsemi |
Description: IC REG LINEAR POS ADJ 180MA 6MLP Voltage - Output (Max): 5.5V Supplier Device Package: 6-DFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 150 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 180mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 6-VDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.4V @ 180mA PSRR: 50dB (100kHz) Control Features: Enable, Power Good Voltage - Output (Min/Fixed): 1V |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8882 | onsemi |
Description: MOSFET N-CH 30V 10.5A/16A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 30235 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76639S3ST | onsemi |
Description: MOSFET N-CH 100V 51A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 888 Stücke: Lieferzeit 10-14 Tag (e) |
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74ALVC16245MTDX | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOP Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
auf Bestellung 1776 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVX161284MTDX | onsemi |
Description: TXRX TRANSLATING IEEE 48TSSOP Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Number of Bits: 8 Logic Type: IEEE STD 1284 Translation Transceiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 3V ~ 3.6V Supplier Device Package: 48-TSSOP Part Status: Obsolete |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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BAY72TR | onsemi |
Description: DIODE GEN PURP 125V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
auf Bestellung 7770 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86113LZ | onsemi |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
auf Bestellung 13246 Stücke: Lieferzeit 10-14 Tag (e) |
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FJB5555TM | onsemi |
Description: TRANS NPN 400V 5A D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FIN1047MTCX | onsemi |
Description: IC TRANSCEIVER 4/0 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 4/0 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 16-TSSOP |
auf Bestellung 3885 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD3706 | onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V |
Produkt ist nicht verfügbar |
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EGF1D | onsemi |
Description: DIODE STANDARD 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 9074 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76609D3ST | onsemi |
Description: MOSFET N-CH 100V 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V |
auf Bestellung 1210 Stücke: Lieferzeit 10-14 Tag (e) |
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SS15 | onsemi |
 Description: DIODE SCHOTTKY 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 50 V |
auf Bestellung 48353 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3682 | onsemi |
Description: MOSFET N-CH 100V 6A/32A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
auf Bestellung 1324 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVX573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 5.9ns Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 3751 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7670AS | onsemi |
Description: MOSFET N-CH 30V 22A/42A 8PQFN |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN4274imu8x | onsemi |
Description: IC CMOS 2 CIRCUIT 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA (x2 Channels) Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 6 mV Supplier Device Package: 8-MSOP Part Status: Last Time Buy Number of Circuits: 2 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
auf Bestellung 15470 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN2558S15X | onsemi |
Description: IC REG LINEAR 1.5V 180MA SOT23-5 |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
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RGF1J | onsemi |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 6128 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVTH574MTCX | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Current - Quiescent (Iq): 190 µA Current - Output High, Low: 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
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ISL9R8120S3ST | onsemi |
Description: DIODE GEN PURP 1.2KV 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
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SS35 | onsemi |
Description: DIODE SCHOTTKY 50V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
auf Bestellung 6049 Stücke: Lieferzeit 10-14 Tag (e) |
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GF1D | onsemi |
Description: DIODE STANDARD 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 39753 Stücke: Lieferzeit 10-14 Tag (e) |
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FIN1032MTCX | onsemi |
Description: IC TRANSCEIVER 0/4 16TSSOP Supplier Device Package: 16-TSSOP Protocol: LVDS Data Rate: 400Mbps Number of Drivers/Receivers: 0/4 Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: Receiver Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 11271 Stücke: Lieferzeit 10-14 Tag (e) |
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RGP10M | onsemi |
Description: DIODE STANDARD 1000V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 36221 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHCT541AMTCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP Supplier Device Package: 20-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 8 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2296 Stücke: Lieferzeit 10-14 Tag (e) |
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GF1J | onsemi |
Description: DIODE STANDARD 600V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 11593 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC7660S | onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8870 | onsemi |
Description: MOSFET N-CH 30V 18A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75329D3ST | onsemi |
Description: MOSFET N-CH 55V 20A TO252AA Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1049 Stücke: Lieferzeit 10-14 Tag (e) |
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1N3070TR | onsemi |
Description: DIODE STANDARD 200V 500MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
auf Bestellung 24377 Stücke: Lieferzeit 10-14 Tag (e) |
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1N485BTR | onsemi |
Description: DIODE STANDARD 200V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 175 V |
auf Bestellung 23888 Stücke: Lieferzeit 10-14 Tag (e) |
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KA78RM33RTF | onsemi |
Description: IC REG LINEAR 3.3V 500MA DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FUSB2805MLX | onsemi |
Description: IC TRANSCEIVER FULL 1/1 32MLP Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 4.5V Number of Drivers/Receivers: 1/1 Data Rate: 480Mbps Protocol: USB 2.0 Supplier Device Package: 32-MLP (5x5) Duplex: Full Part Status: Active |
auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86102L | onsemi |
Description: MOSFET N-CH 100V 7A/18A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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FSUSB22MTCX | onsemi |
Description: IC USB SWITCH QUAD 2X1 16TSSOP Number of Channels: 4 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 3V ~ 3.6V Supplier Device Package: 16-TSSOP -3db Bandwidth: 750MHz On-State Resistance (Max): 6.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Features: Bi-Directional, USB 2.0 Packaging: Cut Tape (CT) |
auf Bestellung 5089 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC6679AZ | onsemi |
Description: MOSFET P-CH 30V 11.5A/20A 8MLP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V |
auf Bestellung 3024 Stücke: Lieferzeit 10-14 Tag (e) |
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SS19 | onsemi |
Description: DIODE SCHOTTKY 90V 1A DO214AC Current - Reverse Leakage @ Vr: 200 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Not For New Designs Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 11930 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9400A | onsemi |
Description: MOSFET P-CH 30V 3.4A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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EGP20D | onsemi |
Description: DIODE GEN PURP 200V 2A DO15 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-15 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 70pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) |
auf Bestellung 9087 Stücke: Lieferzeit 10-14 Tag (e) |
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RGF1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 27854 Stücke: Lieferzeit 10-14 Tag (e) |
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SS13 | onsemi |
Description: DIODE SCHOTTKY 30V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
auf Bestellung 424844 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86102LZ | onsemi |
Description: MOSFET N-CH 100V 6.6A SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3580 | onsemi |
Description: MOSFET N-CH 80V 7.6A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 9297 Stücke: Lieferzeit 10-14 Tag (e) |
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FSQ500L | onsemi |
Description: IC OFFLINE SW FLYBACK SOT223-4 Power (Watts): 3 W Part Status: Last Time Buy Control Features: Soft Start Voltage - Start Up: 6 V Fault Protection: Current Limiting, Over Load, Over Temperature Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Supplier Device Package: SOT-223-4 Voltage - Supply (Vcc/Vdd): 5V ~ 10V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 130kHz Duty Cycle: 60% Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount |
auf Bestellung 3869 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86102LZ | onsemi |
Description: MOSFET N-CH 100V 8A/35A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V |
auf Bestellung 9746 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSA1256L8X |
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Hersteller: onsemi
Description: IC ANALOG SWITCH 8MICROPAK
Description: IC ANALOG SWITCH 8MICROPAK
auf Bestellung 25874 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 12+ | 1.9 EUR |
| 25+ | 1.81 EUR |
| 100+ | 1.48 EUR |
| 250+ | 1.38 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.9 EUR |
| NC7SV74L8X |
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Hersteller: onsemi
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK
Packaging: Cut Tape (CT)
Number of Bits per Element: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Supplier Device Package: 8-MicroPak™
Input Capacitance: 2 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 900 µA
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 8-UFQFN
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK
Packaging: Cut Tape (CT)
Number of Bits per Element: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Supplier Device Package: 8-MicroPak™
Input Capacitance: 2 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 900 µA
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 8-UFQFN
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7NZ17L8X |
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Hersteller: onsemi
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 56+ | 0.38 EUR |
| 63+ | 0.33 EUR |
| 100+ | 0.29 EUR |
| 250+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| NC7WZ86L8X |
|
Hersteller: onsemi
Description: IC GATE XOR 2CH 2-INP 8MICROPAK
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF
Supplier Device Package: 8-MicroPak™
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Description: IC GATE XOR 2CH 2-INP 8MICROPAK
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF
Supplier Device Package: 8-MicroPak™
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 22+ | 0.95 EUR |
| 27+ | 0.79 EUR |
| 100+ | 0.6 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.35 EUR |
| NC7SV125L6X |
|
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Part Status: Obsolete
Supplier Device Package: 6-MicroPak
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Part Status: Obsolete
Supplier Device Package: 6-MicroPak
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 37+ | 0.57 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.36 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.19 EUR |
| NC7WP32K8X |
|
Hersteller: onsemi
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: US8
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: US8
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
auf Bestellung 606 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 30+ | 0.7 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.55 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| FDME1034CZT |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
auf Bestellung 2020 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 2000+ | 0.5 EUR |
| FPF1039UCX |
|
Hersteller: onsemi
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Rds On (Typ): 20mOhm
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Supplier Device Package: 6-WLCSP (0.96x1.66)
Part Status: Last Time Buy
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Rds On (Typ): 20mOhm
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Supplier Device Package: 6-WLCSP (0.96x1.66)
Part Status: Last Time Buy
auf Bestellung 18637 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 20+ | 1.06 EUR |
| 25+ | 0.95 EUR |
| 100+ | 0.84 EUR |
| 250+ | 0.79 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.73 EUR |
| 74VCX245BQX |
|
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 20DQFN
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC TXRX NON-INVERT 3.6V 20DQFN
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 3017 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 10+ | 2.27 EUR |
| 25+ | 2.15 EUR |
| 100+ | 1.65 EUR |
| 250+ | 1.46 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.08 EUR |
| NC7NZ34L8X |
|
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Supplier Device Package: 8-MicroPak™
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Supplier Device Package: 8-MicroPak™
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX04BQX |
|
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14DQFN
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DQFN (3x2.5)
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC INVERTER 6CH 1-INP 14DQFN
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DQFN (3x2.5)
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5672 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 22+ | 0.98 EUR |
| 25+ | 0.9 EUR |
| 100+ | 0.68 EUR |
| 250+ | 0.57 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.4 EUR |
| FDC6310P |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.2A SSOT6
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Description: MOSFET 2P-CH 20V 2.2A SSOT6
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 5197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 20+ | 1.08 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| NC7SB3157L6X |
|
Hersteller: onsemi
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Last Time Buy
Number of Circuits: 1
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Last Time Buy
Number of Circuits: 1
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 0.58 EUR |
| 52+ | 0.4 EUR |
| 59+ | 0.36 EUR |
| FAN4931IP5X |
|
Hersteller: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Voltage - Supply Span (Max): 5.25 V
Voltage - Supply Span (Min): 2.3 V
-3db Bandwidth: 3.7 MHz
Current - Output / Channel: 33 mA
Number of Circuits: 1
Supplier Device Package: SC-70-5
Current - Input Bias: 5 pA
Gain Bandwidth Product: 3.7 MHz
Slew Rate: 3V/µs
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Mounting Type: Surface Mount
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Voltage - Supply Span (Max): 5.25 V
Voltage - Supply Span (Min): 2.3 V
-3db Bandwidth: 3.7 MHz
Current - Output / Channel: 33 mA
Number of Circuits: 1
Supplier Device Package: SC-70-5
Current - Input Bias: 5 pA
Gain Bandwidth Product: 3.7 MHz
Slew Rate: 3V/µs
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Mounting Type: Surface Mount
auf Bestellung 98988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 14+ | 1.51 EUR |
| 25+ | 1.42 EUR |
| 100+ | 1.08 EUR |
| 250+ | 0.92 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.67 EUR |
| FAN2558MPX |
|
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 180MA 6MLP
Voltage - Output (Max): 5.5V
Supplier Device Package: 6-DFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 180mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.4V @ 180mA
PSRR: 50dB (100kHz)
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 1V
Description: IC REG LINEAR POS ADJ 180MA 6MLP
Voltage - Output (Max): 5.5V
Supplier Device Package: 6-DFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 180mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.4V @ 180mA
PSRR: 50dB (100kHz)
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 1V
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 10+ | 2.19 EUR |
| 25+ | 2.08 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.42 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.05 EUR |
| FDMC8882 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 30235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 19+ | 1.15 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| HUF76639S3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 10+ | 3.78 EUR |
| 100+ | 2.62 EUR |
| 74ALVC16245MTDX |
|
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
auf Bestellung 1776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.59 EUR |
| 10+ | 5.56 EUR |
| 25+ | 4.76 EUR |
| 100+ | 3.87 EUR |
| 250+ | 3.43 EUR |
| 500+ | 3.15 EUR |
| 74LVX161284MTDX |
|
Hersteller: onsemi
Description: TXRX TRANSLATING IEEE 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 8
Logic Type: IEEE STD 1284 Translation Transceiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Description: TXRX TRANSLATING IEEE 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 8
Logic Type: IEEE STD 1284 Translation Transceiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| 10+ | 3.09 EUR |
| BAY72TR |
|
Hersteller: onsemi
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
auf Bestellung 7770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| 5000+ | 0.1 EUR |
| FDD86113LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
auf Bestellung 13246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.07 EUR |
| FJB5555TM |
|
Hersteller: onsemi
Description: TRANS NPN 400V 5A D2PAK
Description: TRANS NPN 400V 5A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FIN1047MTCX |
|
Hersteller: onsemi
Description: IC TRANSCEIVER 4/0 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Description: IC TRANSCEIVER 4/0 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
auf Bestellung 3885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 10+ | 2.27 EUR |
| 25+ | 2.07 EUR |
| 100+ | 1.84 EUR |
| 250+ | 1.73 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.62 EUR |
| FDD3706 |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGF1D |
|
Hersteller: onsemi
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 9074 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 34+ | 0.62 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.39 EUR |
| HUF76609D3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.87 EUR |
| SS15 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
auf Bestellung 48353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.29 EUR |
| FDB3682 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 1324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.89 EUR |
| 10+ | 3.83 EUR |
| 100+ | 2.65 EUR |
| 74LVX573MTCX |
|
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.9ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.9ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 3751 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.36 EUR |
| 22+ | 0.96 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.76 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.67 EUR |
| FDMS7670AS |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 22A/42A 8PQFN
Description: MOSFET N-CH 30V 22A/42A 8PQFN
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| FAN4274imu8x |
|
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA (x2 Channels)
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 6 mV
Supplier Device Package: 8-MSOP
Part Status: Last Time Buy
Number of Circuits: 2
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA (x2 Channels)
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 6 mV
Supplier Device Package: 8-MSOP
Part Status: Last Time Buy
Number of Circuits: 2
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
auf Bestellung 15470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 15+ | 1.49 EUR |
| 25+ | 1.39 EUR |
| 100+ | 1.06 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.65 EUR |
| FAN2558S15X |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.5V 180MA SOT23-5
Description: IC REG LINEAR 1.5V 180MA SOT23-5
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 13+ | 1.7 EUR |
| 25+ | 1.62 EUR |
| 100+ | 1.32 EUR |
| RGF1J |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 6128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.32 EUR |
| 74LVTH574MTCX |
|
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9R8120S3ST |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS35 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 6049 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| GF1D |
|
Hersteller: onsemi
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 39753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
| FIN1032MTCX |
|
Hersteller: onsemi
Description: IC TRANSCEIVER 0/4 16TSSOP
Supplier Device Package: 16-TSSOP
Protocol: LVDS
Data Rate: 400Mbps
Number of Drivers/Receivers: 0/4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Receiver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER 0/4 16TSSOP
Supplier Device Package: 16-TSSOP
Protocol: LVDS
Data Rate: 400Mbps
Number of Drivers/Receivers: 0/4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Receiver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 11271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.5 EUR |
| 10+ | 3.34 EUR |
| 25+ | 3.06 EUR |
| 100+ | 2.74 EUR |
| 250+ | 2.58 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.42 EUR |
| RGP10M |
|
Hersteller: onsemi
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 36221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.27 EUR |
| 74VHCT541AMTCX |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 19+ | 1.15 EUR |
| 25+ | 1.04 EUR |
| 100+ | 0.92 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.81 EUR |
| GF1J |
|
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.3 EUR |
| FDMC7660S |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| FDS8870 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 18A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 18A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.57 EUR |
| HUF75329D3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1049 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| 1N3070TR |
|
Hersteller: onsemi
Description: DIODE STANDARD 200V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE STANDARD 200V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 24377 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 115+ | 0.18 EUR |
| 154+ | 0.13 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.087 EUR |
| 2000+ | 0.077 EUR |
| 5000+ | 0.067 EUR |
| 1N485BTR |
|
Hersteller: onsemi
Description: DIODE STANDARD 200V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
Description: DIODE STANDARD 200V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
auf Bestellung 23888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 70+ | 0.3 EUR |
| 113+ | 0.19 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 5000+ | 0.092 EUR |
| KA78RM33RTF |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Description: IC REG LINEAR 3.3V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB2805MLX |
|
Hersteller: onsemi
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 4.14 EUR |
| 25+ | 3.78 EUR |
| 100+ | 3.4 EUR |
| FDMC86102L |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.27 EUR |
| 10+ | 2.74 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.36 EUR |
| FSUSB22MTCX |
|
Hersteller: onsemi
Description: IC USB SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 750MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Description: IC USB SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 750MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
auf Bestellung 5089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.42 EUR |
| 25+ | 2.03 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.38 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.14 EUR |
| FDMC6679AZ |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 11.5A/20A 8MLP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Description: MOSFET P-CH 30V 11.5A/20A 8MLP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
auf Bestellung 3024 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.21 EUR |
| SS19 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 90V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 11930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.32 EUR |
| FDS9400A |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.4A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 3.4A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Im Einkaufswagen
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| EGP20D |
|
Hersteller: onsemi
Description: DIODE GEN PURP 200V 2A DO15
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 2A DO15
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 9087 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.95 EUR |
| 16+ | 1.32 EUR |
| 100+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| 2000+ | 0.64 EUR |
| RGF1G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 27854 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| SS13 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 424844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| 2000+ | 0.3 EUR |
| FDT86102LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.6A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 6.6A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.51 EUR |
| 14+ | 1.58 EUR |
| 100+ | 1.05 EUR |
| FDS3580 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 7.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 7.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.5 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.3 EUR |
| FSQ500L |
|
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK SOT223-4
Power (Watts): 3 W
Part Status: Last Time Buy
Control Features: Soft Start
Voltage - Start Up: 6 V
Fault Protection: Current Limiting, Over Load, Over Temperature
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223-4
Voltage - Supply (Vcc/Vdd): 5V ~ 10V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 130kHz
Duty Cycle: 60%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Description: IC OFFLINE SW FLYBACK SOT223-4
Power (Watts): 3 W
Part Status: Last Time Buy
Control Features: Soft Start
Voltage - Start Up: 6 V
Fault Protection: Current Limiting, Over Load, Over Temperature
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223-4
Voltage - Supply (Vcc/Vdd): 5V ~ 10V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 130kHz
Duty Cycle: 60%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
auf Bestellung 3869 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.53 EUR |
| 25+ | 2.13 EUR |
| 100+ | 1.68 EUR |
| 250+ | 1.45 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.2 EUR |
| FDD86102LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
Description: MOSFET N-CH 100V 8A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
auf Bestellung 9746 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 10+ | 2.77 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.38 EUR |