| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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1.5SMCJ26A-AU_R1_000A1 | PanJit |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 35.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ26A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 35.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ22A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...27V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ7.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.6V Max. forward impulse current: 50A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5231B-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5231B_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5231BS-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5231BS_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJMF990N65EC_T0_00001 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Polarisation: unipolar Gate charge: 9.7nC Drain current: 4.7A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: ITO220AB On-state resistance: 990mΩ Mounting: THT Pulsed drain current: 9.5A Power dissipation: 22.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| P6KE10A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 9.5...10.5V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 10µA Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 41A Features of semiconductor devices: glass passivated Max. off-state voltage: 8.55V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJMF080N65FR2_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 29.2A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJMH080N65FR2_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJMP080N65FR2_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ13A-AU_R2_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ13A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ15A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
auf Bestellung 2165 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C15_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 2727 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C15-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJD80N03_L2_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PE1605C4E6-AU_S1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 4A Application: automotive industry Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT563 Capacitance: 0.6pF Type of diode: TVS Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PE1605C4E6-AU_R1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 4A Application: automotive industry Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT563 Capacitance: 0.6pF Type of diode: TVS Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PE1605C4E6_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 4A Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT563 Capacitance: 0.6pF Type of diode: TVS Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P6KE16CA_AY_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 13.6V Max. forward impulse current: 27A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Breakdown voltage: 15.2...16.8V Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PJD13N10A_L2_00601 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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1.5SMCJ30CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ30CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ30CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJD60N04S-AU_L2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJD60N04V-AU_L2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 154A Case: TO252AA Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Gate-source voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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1SMA4733_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ZMM55-B3V6_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 3.6V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJT7838_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.2A Gate charge: 0.95nC |
auf Bestellung 7642 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJT7603_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5/6Ω Mounting: SMD Kind of channel: enhancement Kind of transistor: complementary pair Kind of package: reel; tape Gate charge: 0.95/1.1nC |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJT7801_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -2.8A Gate charge: 2.2nC |
auf Bestellung 2844 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJC7404_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.4Ω Pulsed drain current: 4A Power dissipation: 0.35W Gate charge: 1.6nC Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape |
auf Bestellung 4184 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMB6.8A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 57A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ12CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJX8839_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 Mounting: SMD Pulsed drain current: 0.2A Power dissipation: 0.3W Gate charge: 1.1nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| P6KE56CA_R2_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 7.8A Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMBTA06W_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ZMM55-B3V3_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ZMM55-C3V3_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAV99W_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Features of semiconductor devices: fast switching Case: SOT323 Kind of package: reel; tape Max. forward impulse current: 4A Max. forward voltage: 1.25V Leakage current: 2.5µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJA3400-AU_R1_000A1 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6 Mounting: SMD Polarisation: unipolar Drain current: -2A Kind of channel: enhancement Drain-source voltage: -20V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: 12V Kind of package: reel; tape Case: SOT23-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ9.0A_R2_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 39A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ48A_R2_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C18-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C18_R1_00501 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZX84C18TW_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 18V; SMD; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RS1K_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.15mA |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA5931_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 18V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 1323 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA5931-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 18V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ24A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ24A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P6KE20A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BC848BW_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ZMM55-C12_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 12V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 30140 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3401A_R1_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W On-state resistance: 86mΩ Mounting: SMD Pulsed drain current: -14.4A Power dissipation: 1.25W Gate charge: 19nC Polarisation: unipolar Drain current: -3.6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 |
auf Bestellung 1583 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ15A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS3060HE-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 3A; reel,tape Mounting: SMD Max. forward impulse current: 80A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 60V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Case: SOD123HE Type of diode: Schottky rectifying |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1.5SMCJ26A-AU_R1_000A1 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1.5SMCJ26A_R1_00001 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| P6SMBJ22A_R1_00001 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| P6SMBJ7.0A_R1_00001 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MMSZ5231B-AU_R1_000A1 |
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Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5231B_R1_00001 |
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Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMSZ5231BS-AU_R1_000A1 |
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Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5231BS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PJMF990N65EC_T0_00001 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Polarisation: unipolar
Gate charge: 9.7nC
Drain current: 4.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
On-state resistance: 990mΩ
Mounting: THT
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Polarisation: unipolar
Gate charge: 9.7nC
Drain current: 4.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
On-state resistance: 990mΩ
Mounting: THT
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Produkt ist nicht verfügbar
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| P6KE10A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5...10.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 41A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.55V
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5...10.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 41A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.55V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJMF080N65FR2_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJMH080N65FR2_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PJMP080N65FR2_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| P4SMAJ13A-AU_R2_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| P4SMAJ13A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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Stück im Wert von UAH
| P4SMAJ15A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX84C15_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 2727 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX84C15-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJD80N03_L2_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PE1605C4E6-AU_S1_000A1 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| PE1605C4E6-AU_R1_000A1 |
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| PE1605C4E6_R1_00001 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| P6KE16CA_AY_00001 |
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 13.6V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 15.2...16.8V
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 13.6V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 15.2...16.8V
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJD13N10A_L2_00601 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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| 1.5SMCJ30CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1.5SMCJ30CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ30CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| PJD60N04S-AU_L2_002A1 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJD60N04V-AU_L2_002A1 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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| 1SMA4733_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
| ZMM55-B3V6_R1_10001 |
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| PJT7838_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 0.95nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 0.95nC
auf Bestellung 7642 Stücke:
Lieferzeit 14-21 Tag (e)
| PJT7603_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5/6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5/6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
| PJT7801_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -2.8A
Gate charge: 2.2nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -2.8A
Gate charge: 2.2nC
auf Bestellung 2844 Stücke:
Lieferzeit 14-21 Tag (e)
| PJC7404_R1_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.4Ω
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.4Ω
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
auf Bestellung 4184 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMB6.8A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| P4SMAJ12CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| PJX8839_R1_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Mounting: SMD
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Gate charge: 1.1nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Mounting: SMD
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Gate charge: 1.1nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
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| P6KE56CA_R2_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 7.8A
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 7.8A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| MMBTA06W_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| ZMM55-B3V3_R1_10001 |
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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| ZMM55-C3V3_R1_10001 |
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BAV99W_R2_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Leakage current: 2.5µA
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| PJA3400-AU_R1_000A1 |
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Produkt ist nicht verfügbar
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| P6SMBJ9.0A_R2_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| P6SMBJ48A_R2_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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| BZX84C18-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZX84C18_R1_00501 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZX84C18TW_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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| RS1K_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
| 1SMA5931_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 1323 Stücke:
Lieferzeit 14-21 Tag (e)
| 1SMA5931-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| P4SMAJ24A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| P4SMAJ24A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| P6KE20A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BC848BW_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| ZMM55-C12_R1_10001 |
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 12V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 12V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 30140 Stücke:
Lieferzeit 14-21 Tag (e)
| PJA3401A_R1_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
On-state resistance: 86mΩ
Mounting: SMD
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
On-state resistance: 86mΩ
Mounting: SMD
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)
| P4SMAJ15A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| SS3060HE-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 3A; reel,tape
Mounting: SMD
Max. forward impulse current: 80A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123HE
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 3A; reel,tape
Mounting: SMD
Max. forward impulse current: 80A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123HE
Type of diode: Schottky rectifying
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)