| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PE4136C2A-AU_R1_000A1 | PanJit |
 Category: Protection diodes - arraysDescription: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Number of channels: 2 Case: SOT23 Mounting: SMD Breakdown voltage: 40V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Application: automotive industry Max. off-state voltage: 36V Semiconductor structure: unidirectional Leakage current: 0.8µA Capacitance: 0.1nF Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJD100N06SA-AU_L2_006A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50.4A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PJT7600_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1A/-700mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 400/600mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate charge: 1.6/2.2nC |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJX8603_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate charge: 0.95/1.1nC |
auf Bestellung 1646 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJX138K_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.2A Gate charge: 1nC |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ16CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ16CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZX84C3V3-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 3.3V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C3V3_R1_00501 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 3.3V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C3V3W-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 3.3V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMA20A-AU_R2_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 19÷21V; 15A; unidirectional; SMA; reel,tape Case: SMA Mounting: SMD Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Application: automotive industry Max. off-state voltage: 17.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Type of diode: TVS Breakdown voltage: 19...21V Max. forward impulse current: 15A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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US1J_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape |
auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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US1B_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape |
auf Bestellung 1647 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCL4148_R1_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: MicroMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
auf Bestellung 41253 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCL4148_R2_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: MicroMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJD40N06A_L2_00601 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
auf Bestellung 8912 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| P6AFC51A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMAF-C; P6AFC Manufacturer series: P6AFC Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Application: automotive industry Max. off-state voltage: 51V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 0.1µA Case: SMAF-C Type of diode: TVS Mounting: SMD Breakdown voltage: 56.7...62.7V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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P4SMAJ30CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ30CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJF18N20_T0_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: ITO220AB Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJD18N20_L2_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 83W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 72A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJP18N20_T0_00001 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MER1002FCT_T0_00601 | PanJit |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 100A; ITO220AB; tube; 37ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Max. forward impulse current: 100A Case: ITO220AB Kind of package: tube Max. forward voltage: 0.95V Leakage current: 60µA Reverse recovery time: 37ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N5354B_AY_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 17V; DO201AE; single diode; Ammo Pack; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 17V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5226B_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 1595 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5226B-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5226BS-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 3.3V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5226BS_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 3.3V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857BW-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857BW_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857BW_R2_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| P6KE43A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 40.9÷45.2V; 10.1A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Breakdown voltage: 40.9...45.2V Max. forward impulse current: 10.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PJMH074N60FRC_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 446W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 117A Gate charge: 84nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJMH074N60FRCH_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJMK074N60FRCH_T0_00201 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 74V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| P6KE27CA_AY_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| P6KE27CA-AU_R2_000A1 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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P6SMBJ6.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ10CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ10CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC858A_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJA3400_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Pulsed drain current: 19.6A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 4.9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 60mΩ |
auf Bestellung 1070 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ22CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...27V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5245B_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 2389 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5245B-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5245BS_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5245BS-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
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MMSZ5248BS-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape Zener voltage: 18V Type of diode: Zener Tolerance: ±5% Mounting: SMD Power dissipation: 0.2W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 |
Produkt ist nicht verfügbar |
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MMSZ5248BS_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape Zener voltage: 18V Type of diode: Zener Tolerance: ±5% Mounting: SMD Power dissipation: 0.2W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 |
Produkt ist nicht verfügbar |
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1.5SMCJ150A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJX8828-AU_R1_000A1 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJX8828_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BZX84C11-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 11V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C11_R1_00501 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 11V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZT52-C2V4S-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BZT52-C2V4S_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PJW4P06A-AU_R2_007A1 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape Pulsed drain current: -16A Gate charge: 10nC |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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PJW4P06A_R2_00701 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -16A Gate charge: 10nC |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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PJD16P06A_L2_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -16A Power dissipation: 2W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: -64A Gate charge: 22nC |
auf Bestellung 10418 Stücke: Lieferzeit 14-21 Tag (e) |
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3.0SMCJ26A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 71.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PE4136C2A-AU_R1_000A1 |
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Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Number of channels: 2
Case: SOT23
Mounting: SMD
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 0.8µA
Capacitance: 0.1nF
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Number of channels: 2
Case: SOT23
Mounting: SMD
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 0.8µA
Capacitance: 0.1nF
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJD100N06SA-AU_L2_006A1 |
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Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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| PJT7600_R1_00001 |
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Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 1.6/2.2nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 1.6/2.2nC
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)
| PJX8603_R1_00001 |
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Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
| PJX138K_R1_00001 |
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 1nC
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMBJ16CA-AU_R1_000A1 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| P6SMBJ16CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| BZX84C3V3-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C3V3_R1_00501 |
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Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BZX84C3V3W-AU_R1_000A1 |
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Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| P4SMA20A-AU_R2_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 19÷21V; 15A; unidirectional; SMA; reel,tape
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 17.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 19...21V
Max. forward impulse current: 15A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 19÷21V; 15A; unidirectional; SMA; reel,tape
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 17.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 19...21V
Max. forward impulse current: 15A
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| US1J_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)
| US1B_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
| MCL4148_R1_10001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
auf Bestellung 41253 Stücke:
Lieferzeit 14-21 Tag (e)
| MCL4148_R2_10001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
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| PJD40N06A_L2_00601 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
auf Bestellung 8912 Stücke:
Lieferzeit 14-21 Tag (e)
| P6AFC51A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMAF-C; P6AFC
Manufacturer series: P6AFC
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Max. off-state voltage: 51V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SMAF-C
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 56.7...62.7V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMAF-C; P6AFC
Manufacturer series: P6AFC
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Max. off-state voltage: 51V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SMAF-C
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 56.7...62.7V
Produkt ist nicht verfügbar
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| P4SMAJ30CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| P4SMAJ30CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| PJF18N20_T0_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: ITO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: ITO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJD18N20_L2_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 72A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 72A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJP18N20_T0_00001 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MER1002FCT_T0_00601 |
|
Hersteller: PanJit
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 100A; ITO220AB; tube; 37ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Max. forward impulse current: 100A
Case: ITO220AB
Kind of package: tube
Max. forward voltage: 0.95V
Leakage current: 60µA
Reverse recovery time: 37ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 100A; ITO220AB; tube; 37ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Max. forward impulse current: 100A
Case: ITO220AB
Kind of package: tube
Max. forward voltage: 0.95V
Leakage current: 60µA
Reverse recovery time: 37ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5354B_AY_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 17V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 17V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 17V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 17V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5226B_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 1595 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5226B-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5226BS-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5226BS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BC857BW-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC857BW_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC857BW_R2_00001 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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| P6KE43A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 40.9÷45.2V; 10.1A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Breakdown voltage: 40.9...45.2V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 40.9÷45.2V; 10.1A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Breakdown voltage: 40.9...45.2V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJMH074N60FRC_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 117A
Gate charge: 84nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 117A
Gate charge: 84nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH074N60FRCH_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMK074N60FRCH_T0_00201 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE27CA_AY_00001 |
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| P6KE27CA-AU_R2_000A1 |
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7÷28.4V; 16A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ6.0A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
| P4SMAJ10CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ10CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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Stück im Wert von UAH
| BC858A_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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| PJA3400_R1_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 60mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 60mΩ
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMBJ22CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MMSZ5245B_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5245B-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| MMSZ5245BS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MMSZ5245BS-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| MMSZ5248BS-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5248BS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1.5SMCJ150A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| PJX8828-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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Stück im Wert von UAH
| PJX8828_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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Stück im Wert von UAH
| BZX84C11-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 11V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 11V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZX84C11_R1_00501 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 11V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 11V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT52-C2V4S-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| BZT52-C2V4S_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PJW4P06A-AU_R2_007A1 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| PJW4P06A_R2_00701 |
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
| PJD16P06A_L2_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
auf Bestellung 10418 Stücke:
Lieferzeit 14-21 Tag (e)
| 3.0SMCJ26A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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