| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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P6SMBJ12CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ12CA_R1_00001 | PanJit |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC817-16_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC817-16-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC817-16W-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC817-16W_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ18A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ES1G_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC857A-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857A_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ30CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ30CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1N5352B_AY_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 15V; DO201AE; single diode; Ammo Pack; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 15V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJSD36CW-AU_R1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Max. off-state voltage: 36V Max. forward impulse current: 3A Semiconductor structure: bidirectional Leakage current: 1µA Case: SOD323 Capacitance: 45pF Type of diode: TVS Number of channels: 1 Mounting: SMD Breakdown voltage: 40.57V Peak pulse power dissipation: 0.35kW Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PCDH2065CCG1_T0_00601 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Mounting: THT Max. off-state voltage: 650V Max. forward impulse current: 0.64kA Max. forward voltage: 1.8V Power dissipation: 98W Technology: SiC Load current: 10A x2 Max. load current: 40A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 70µA Case: TO247-3 Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PCDH2065CCGB_T0_00601 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Mounting: THT Max. off-state voltage: 650V Max. forward impulse current: 704A Max. forward voltage: 1.4V Power dissipation: 138W Technology: SiC Load current: 10A x2 Max. load current: 48A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 0.1mA Case: TO247-3 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PCDH2065CCGC_T0_00601 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Mounting: THT Max. off-state voltage: 650V Max. forward impulse current: 384A Max. forward voltage: 1.8V Power dissipation: 90W Technology: SiC Load current: 10A x2 Max. load current: 28A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 0.1mA Case: TO247-3 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MB310_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 1mA Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.8V Max. off-state voltage: 0.1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ28CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ28CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1N5350B_AY_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 13V; DO201AE; single diode; Ammo Pack; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 13V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA06_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857BS_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT363 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ12CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
auf Bestellung 2091 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ8.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 8.89÷10.23V; 110.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 8.89...10.23V Max. forward impulse current: 110.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 50µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZX84C33-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C33_R1_00501 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C33W_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 33V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ5.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ5.0A_R2_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 326A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS70S-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward voltage: 0.9V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Leakage current: 45µA |
auf Bestellung 26970 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC857AW-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857AW_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ24CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ24CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBT2369A_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC858B-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC858B_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC858BW_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC817DS-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23-6L Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BC817DS-25_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23-6L Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SM6S48A-AU_R2_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 4.6kW; 53.3÷58.7V; 57A; unidirectional; DO218AB; SM6S Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.7V Max. forward impulse current: 57A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 0.5µA Application: automotive industry Kind of package: reel; tape Manufacturer series: SM6S |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS1040-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.55V Features of semiconductor devices: fast switching Application: automotive industry Max. off-state voltage: 40V Load current: 1A Max. load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 2.3mA Case: SOD123 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SS1040FL_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.55V Features of semiconductor devices: fast switching Max. off-state voltage: 40V Load current: 1A Max. load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 30µA Case: SOD123F Type of diode: Schottky rectifying |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SS10200HE_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 200V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.85V Features of semiconductor devices: fast switching Max. off-state voltage: 200V Load current: 1A Max. load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 30µA Case: SOD123HE Type of diode: Schottky rectifying |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SS1040_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.55V Features of semiconductor devices: fast switching Max. off-state voltage: 40V Load current: 1A Max. load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 30µA Case: SOD123 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ20A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.5A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ43A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...55V Max. forward impulse current: 21.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ30A-AU_R2_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ30A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ30A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ30A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5231A_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RB751V-40_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.34V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W Features of semiconductor devices: ultrafast switching Leakage current: 0.5µA |
auf Bestellung 4109 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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RB751V-40X_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Max. load current: 0.2A Leakage current: 0.5µA |
auf Bestellung 4258 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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RB751V-40-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 0.6A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Application: automotive industry Leakage current: 22µA |
auf Bestellung 4659 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJT7800_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 4A Gate charge: 1.6nC |
auf Bestellung 5968 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| P6KE30CA_AY_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| P6KE30CA_R2_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PE4136C2A_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Number of channels: 2 Case: SOT23 Mounting: SMD Breakdown voltage: 40V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 0.1nF Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P6SMBJ12CA-AU_R1_000A1 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ12CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC817-16_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-16-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-16W-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-16W_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ18A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES1G_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)
| BC857A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC857A_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ30CA-AU_R1_000A1 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ30CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5352B_AY_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJSD36CW-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 40.57V
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 40.57V
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCDH2065CCG1_T0_00601 |
|
Hersteller: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 0.64kA
Max. forward voltage: 1.8V
Power dissipation: 98W
Technology: SiC
Load current: 10A x2
Max. load current: 40A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 70µA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 0.64kA
Max. forward voltage: 1.8V
Power dissipation: 98W
Technology: SiC
Load current: 10A x2
Max. load current: 40A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 70µA
Case: TO247-3
Type of diode: Schottky rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| PCDH2065CCGB_T0_00601 |
|
Hersteller: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 704A
Max. forward voltage: 1.4V
Power dissipation: 138W
Technology: SiC
Load current: 10A x2
Max. load current: 48A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 704A
Max. forward voltage: 1.4V
Power dissipation: 138W
Technology: SiC
Load current: 10A x2
Max. load current: 48A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
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| PCDH2065CCGC_T0_00601 |
|
Hersteller: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 384A
Max. forward voltage: 1.8V
Power dissipation: 90W
Technology: SiC
Load current: 10A x2
Max. load current: 28A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 384A
Max. forward voltage: 1.8V
Power dissipation: 90W
Technology: SiC
Load current: 10A x2
Max. load current: 28A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
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| MB310_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1mA
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.8V
Max. off-state voltage: 0.1kV
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1mA
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.8V
Max. off-state voltage: 0.1kV
Produkt ist nicht verfügbar
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| P6SMBJ28CA-AU_R1_000A1 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
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| P6SMBJ28CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1N5350B_AY_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 13V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 13V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 13V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 13V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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| MMBTA06_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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| BC857BS_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| P4SMAJ12CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5SMCJ8.0A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 8.89÷10.23V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 8.89÷10.23V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| BZX84C33-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| BZX84C33_R1_00501 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BZX84C33W_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 33V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 33V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1.5SMCJ5.0A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ5.0A_R2_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BAS70S-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 45µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 45µA
auf Bestellung 26970 Stücke:
Lieferzeit 14-21 Tag (e)
| BC857AW-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BC857AW_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| P6SMBJ24CA-AU_R1_000A1 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| P6SMBJ24CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MMBT2369A_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858B-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858B_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858BW_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BC817DS-AU_R1_000A1 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
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| BC817DS-25_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Produkt ist nicht verfügbar
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| SM6S48A-AU_R2_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 53.3÷58.7V; 57A; unidirectional; DO218AB; SM6S
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.7V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 0.5µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: SM6S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 53.3÷58.7V; 57A; unidirectional; DO218AB; SM6S
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.7V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 0.5µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: SM6S
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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| SS1040-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.55V
Features of semiconductor devices: fast switching
Application: automotive industry
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 2.3mA
Case: SOD123
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.55V
Features of semiconductor devices: fast switching
Application: automotive industry
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 2.3mA
Case: SOD123
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SS1040FL_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.55V
Features of semiconductor devices: fast switching
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123F
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.55V
Features of semiconductor devices: fast switching
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123F
Type of diode: Schottky rectifying
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| SS10200HE_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 200V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.85V
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123HE
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 200V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.85V
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123HE
Type of diode: Schottky rectifying
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
| SS1040_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.55V
Features of semiconductor devices: fast switching
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.55V
Features of semiconductor devices: fast switching
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
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| P6SMBJ20A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.5A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1.5SMCJ43A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1.5SMCJ30A-AU_R2_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 1.5SMCJ30A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ30A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 3.0SMCJ30A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MMSZ5231A_R1_00001 |
|
Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RB751V-40_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.34V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: ultrafast switching
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.34V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: ultrafast switching
Leakage current: 0.5µA
auf Bestellung 4109 Stücke:
Lieferzeit 14-21 Tag (e)
| RB751V-40X_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. load current: 0.2A
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. load current: 0.2A
Leakage current: 0.5µA
auf Bestellung 4258 Stücke:
Lieferzeit 14-21 Tag (e)
| RB751V-40-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Leakage current: 22µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Leakage current: 22µA
auf Bestellung 4659 Stücke:
Lieferzeit 14-21 Tag (e)
| PJT7800_R1_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 4A
Gate charge: 1.6nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 4A
Gate charge: 1.6nC
auf Bestellung 5968 Stücke:
Lieferzeit 14-21 Tag (e)
| P6KE30CA_AY_00001 |
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| P6KE30CA_R2_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| PE4136C2A_R1_00001 |
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Number of channels: 2
Case: SOT23
Mounting: SMD
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.1nF
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Number of channels: 2
Case: SOT23
Mounting: SMD
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.1nF
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH