| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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P4SMAJ33A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC848B-AU_R1_000A1 | PanJit |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC848B_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ10A-AU_R2_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ10A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1N4752A_R2_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 1W; 33V; DO41; single diode; tape; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 33V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1SMA4746_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; SMA; single diode; reel,tape Mounting: SMD Case: SMA Zener voltage: 18V Type of diode: Zener Tolerance: ±5% Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ12A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ12A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RS1010FL_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA Max. forward impulse current: 30A Max. forward voltage: 1.3V Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123F Type of diode: rectifying Reverse recovery time: 0.5µs Mounting: SMD |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS21_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 1µA Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 2.5A Max. forward voltage: 1V Features of semiconductor devices: fast switching Max. off-state voltage: 250V Load current: 0.2A |
auf Bestellung 2825 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| P6KE39CA_AY_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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P6SMBJ18CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ18CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ6.0CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ES2D_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1420 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SBA0530Q-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; DFN2L; SMD; 30V; 0.5A; reel,tape Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 0.52V Max. off-state voltage: 30V Load current: 0.5A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 3.5mA Case: DFN2L Type of diode: Schottky switching |
auf Bestellung 31000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ26A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ26A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PBHV8050SA_R1_00501 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Mounting: SMD Collector-emitter voltage: 500V Power dissipation: 0.5W Polarisation: bipolar Type of transistor: NPN Kind of package: reel; tape Case: SOT23 Frequency: 50MHz Collector current: 0.15A |
auf Bestellung 5957 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5359B_AY_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 24V; DO201AE; single diode; Ammo Pack; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N5359B_R2_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 24V; DO201AE; single diode; tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PEC11SD03M1Q_R1_00501 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Mounting: SMD Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Version: ESD Max. off-state voltage: 3V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Case: DFN1006-2 Capacitance: 0.19pF Type of diode: TVS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BC858C-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC858C_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1.5KE12A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 11.4...12.6V Max. forward impulse current: 90A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PJA3435_R1_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -500mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -1A Gate charge: 1.4nC |
auf Bestellung 5950 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMF22A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 24.4÷26.9V; 5.6A; unidirectional; SOD123F; SMF Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 5.6A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMF Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMF22A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 24.4÷26.9V; 5.6A; unidirectional; SOD123F; SMF Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 5.6A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ6.5CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 53.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJEC2415VM1WS-AU_R1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1 Capacitance: 17pF Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.16kW Version: ESD Application: automotive industry Max. off-state voltage: 15...24V Semiconductor structure: asymmetric; bidirectional Leakage current: 50nA Case: SOD323 Type of diode: TVS Number of channels: 1 Breakdown voltage: 17.1...30.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PJEC24MTA-AU_R1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2 Capacitance: 11pF Mounting: SMD Application: automotive industry Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Type of diode: TVS Number of channels: 2 Breakdown voltage: 30.3V Max. forward impulse current: 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJEC2415VM1WS_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.16kW Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOD323 Type of diode: TVS Number of channels: 1 Breakdown voltage: 30.3V Max. forward impulse current: 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJEC24MTA_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2 Capacitance: 11pF Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Type of diode: TVS Number of channels: 2 Breakdown voltage: 30.3V Max. forward impulse current: 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS0530_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape; 300mW Mounting: SMD Max. forward impulse current: 5.5A Max. forward voltage: 0.43V Power dissipation: 0.3W Features of semiconductor devices: fast switching Max. off-state voltage: 30V Load current: 0.5A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20µA Case: SOD123 Type of diode: Schottky switching |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N4755A_AY_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 1W; 43V; DO41; single diode; Ammo Pack; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 43V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ24CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PSMN015N10NS2_R2_00201 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJC7407_R1_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -5.2A Gate charge: 5.4nC |
auf Bestellung 5795 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| P6KE180A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 154V Breakdown voltage: 171...189V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Kind of package: Ammo Pack Max. forward impulse current: 2.4A Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| P6KE180A_R2_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 154V Breakdown voltage: 171...189V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Max. forward impulse current: 2.4A Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SK24_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 20mA |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SS10100FL-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.8V Features of semiconductor devices: fast switching Application: automotive industry Max. off-state voltage: 0.1kV Load current: 1A Max. load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Case: SOD123F Type of diode: Schottky rectifying |
auf Bestellung 3672 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SS10100FL_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 0.8V Max. load current: 2A Leakage current: 0.1mA Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PMSM810_R2_00301 | PanJit |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6 Type of bridge rectifier: single-phase Max. forward impulse current: 200A Max. forward voltage: 1V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 8A Case: M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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P4SMAJ15CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ15CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS2040LL_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Case: SOD123F Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 0.45V Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Leakage current: 0.5mA Type of diode: Schottky rectifying |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJC7401_R1_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Mounting: SMD Case: SOT323 On-state resistance: 0.18Ω Pulsed drain current: -6A Power dissipation: 0.35W Gate charge: 11nC Polarisation: unipolar Drain current: -1.5A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape |
auf Bestellung 2075 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ16CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ16CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ58A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5SMCJ58A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3.0SMCJ58A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 32A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P6KE150A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE Type of diode: TVS Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| P6KE150A_R2_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE Type of diode: TVS Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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P4SMAJ26A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ26A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSD36CW_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Max. off-state voltage: 36V Max. forward impulse current: 3A Semiconductor structure: bidirectional Leakage current: 1µA Case: SOD323 Capacitance: 45pF Type of diode: TVS Number of channels: 1 Mounting: SMD Breakdown voltage: 29.4V Peak pulse power dissipation: 0.35kW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PJSOT24C-05-AU_R1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2 Application: automotive industry Mounting: SMD Breakdown voltage: 29.4V Max. forward impulse current: 12A Peak pulse power dissipation: 0.35kW Max. off-state voltage: 24V Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT23 Capacitance: 0.15nF Type of diode: TVS Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P4SMAJ33A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC848B-AU_R1_000A1 |
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Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC848B_R1_00001 |
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Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ10A-AU_R2_000A1 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ10A_R1_00001 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N4752A_R2_00001 |
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Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMA4746_R1_00001 |
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Hersteller: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SMA; single diode; reel,tape
Mounting: SMD
Case: SMA
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SMA; single diode; reel,tape
Mounting: SMD
Case: SMA
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| P4SMAJ12A-AU_R1_000A1 |
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Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ12A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1010FL_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS21_R1_00001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2.5A
Max. forward voltage: 1V
Features of semiconductor devices: fast switching
Max. off-state voltage: 250V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2.5A
Max. forward voltage: 1V
Features of semiconductor devices: fast switching
Max. off-state voltage: 250V
Load current: 0.2A
auf Bestellung 2825 Stücke:
Lieferzeit 14-21 Tag (e)
| P6KE39CA_AY_00001 |
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ18CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ18CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| P4SMAJ6.0CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| ES2D_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
| SBA0530Q-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DFN2L; SMD; 30V; 0.5A; reel,tape
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 0.52V
Max. off-state voltage: 30V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 3.5mA
Case: DFN2L
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DFN2L; SMD; 30V; 0.5A; reel,tape
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 0.52V
Max. off-state voltage: 30V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 3.5mA
Case: DFN2L
Type of diode: Schottky switching
auf Bestellung 31000 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMBJ26A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| P6SMBJ26A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| PBHV8050SA_R1_00501 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector-emitter voltage: 500V
Power dissipation: 0.5W
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT23
Frequency: 50MHz
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector-emitter voltage: 500V
Power dissipation: 0.5W
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT23
Frequency: 50MHz
Collector current: 0.15A
auf Bestellung 5957 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5359B_AY_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5359B_R2_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Version: ESD
Max. off-state voltage: 3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.19pF
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Version: ESD
Max. off-state voltage: 3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.19pF
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858C-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858C_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE12A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
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| PJA3435_R1_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -1A
Gate charge: 1.4nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -1A
Gate charge: 1.4nC
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
| SMF22A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 24.4÷26.9V; 5.6A; unidirectional; SOD123F; SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.6A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 24.4÷26.9V; 5.6A; unidirectional; SOD123F; SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.6A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SMF22A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 24.4÷26.9V; 5.6A; unidirectional; SOD123F; SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.6A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 24.4÷26.9V; 5.6A; unidirectional; SOD123F; SMF
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 5.6A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| P6SMBJ6.5CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷7.98V; 53.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| PJEC2415VM1WS-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Capacitance: 17pF
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.16kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Capacitance: 17pF
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.16kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
Produkt ist nicht verfügbar
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| PJEC24MTA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| PJEC2415VM1WS_R1_00001 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| PJEC24MTA_R1_00001 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| SS0530_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape; 300mW
Mounting: SMD
Max. forward impulse current: 5.5A
Max. forward voltage: 0.43V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching
Max. off-state voltage: 30V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Case: SOD123
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape; 300mW
Mounting: SMD
Max. forward impulse current: 5.5A
Max. forward voltage: 0.43V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching
Max. off-state voltage: 30V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Case: SOD123
Type of diode: Schottky switching
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4755A_AY_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 1W; 43V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 43V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 43V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 43V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ24CA_R1_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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Stück im Wert von UAH
| PSMN015N10NS2_R2_00201 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJC7407_R1_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
auf Bestellung 5795 Stücke:
Lieferzeit 14-21 Tag (e)
| P6KE180A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: Ammo Pack
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: Ammo Pack
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| P6KE180A_R2_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Max. forward impulse current: 2.4A
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| SK24_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 20mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 20mA
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| SS10100FL-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.8V
Features of semiconductor devices: fast switching
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123F
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.8V
Features of semiconductor devices: fast switching
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123F
Type of diode: Schottky rectifying
auf Bestellung 3672 Stücke:
Lieferzeit 14-21 Tag (e)
| SS10100FL_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.8V
Max. load current: 2A
Leakage current: 0.1mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.8V
Max. load current: 2A
Leakage current: 0.1mA
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| PMSM810_R2_00301 |
Hersteller: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 8A
Case: M6
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 8A
Case: M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ15CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ15CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS2040LL_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.45V
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.5mA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.45V
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.5mA
Type of diode: Schottky rectifying
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
| PJC7401_R1_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Power dissipation: 0.35W
Gate charge: 11nC
Polarisation: unipolar
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Power dissipation: 0.35W
Gate charge: 11nC
Polarisation: unipolar
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
| P4SMAJ16CA-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ16CA_R1_00001 |
Hersteller: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1.5SMCJ58A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| 1.5SMCJ58A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 3.0SMCJ58A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6KE150A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6KE150A_R2_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ26A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4SMAJ26A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJSD36CW_R1_00001 |
|
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJSOT24C-05-AU_R1_000A1 |
Hersteller: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 0.15nF
Type of diode: TVS
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 0.15nF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH