Suchergebnisse für "100n0" : > 60

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100N03LS infineon 08+
auf Bestellung 150000 Stücke:
Lieferzeit 21-28 Tag (e)
100N03MS infineon 08+
auf Bestellung 150000 Stücke:
Lieferzeit 21-28 Tag (e)
381LL682M100N062 381LL682M100N062 Cornell Dubilier - CDE 381LL.pdf Aluminium Electrolytic Capacitors - Snap In 6800uF 100V 20% 8K hours
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.4 EUR
10+ 31.75 EUR
20+ 26.45 EUR
50+ 23.65 EUR
383LX123M100N082 383LX123M100N082 Cornell Dubilier Knowles 381-383.pdf Description: CAP ALUM 12000UF 20% 100V SNAP
Tolerance: ±20%
Packaging: Bulk
Package / Case: Radial, Can - Snap-In - 4 Lead
Size / Dimension: 1.575" Dia (40.00mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Applications: General Purpose
ESR (Equivalent Series Resistance): 21mOhm
Lifetime @ Temp.: 3000 Hrs @ 105°C
Height - Seated (Max): 3.228" (82.00mm)
Part Status: Active
Capacitance: 12000 µF
Voltage - Rated: 100 V
Ripple Current @ Low Frequency: 6.44 A @ 120 Hz
Ripple Current @ High Frequency: 7.4 A @ 20 kHz
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.94 EUR
24+ 23.07 EUR
120+ 17.96 EUR
50M060100N008 50M060100N008 Essentra Components 5020.PDF Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.457" (11.60mm)
Length - Below Head: 0.315" (8.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
67+ 0.26 EUR
79+ 0.23 EUR
94+ 0.19 EUR
100+ 0.18 EUR
104+ 0.17 EUR
250+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N010 50M060100N010 Essentra Components skuAsset?mediaId=168471 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.535" (13.60mm)
Length - Below Head: 0.394" (10.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
67+ 0.26 EUR
78+ 0.23 EUR
93+ 0.19 EUR
100+ 0.18 EUR
104+ 0.17 EUR
250+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N016 50M060100N016 Essentra Components skuAsset?mediaId=168473 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.772" (19.60mm)
Length - Below Head: 0.630" (16.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1892 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
66+ 0.27 EUR
77+ 0.23 EUR
93+ 0.19 EUR
99+ 0.18 EUR
103+ 0.17 EUR
250+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N020 50M060100N020 Essentra Components skuAsset?mediaId=168474 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.929" (23.60mm)
Length - Below Head: 0.787" (20.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1578 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+ 0.27 EUR
77+ 0.23 EUR
92+ 0.19 EUR
98+ 0.18 EUR
102+ 0.17 EUR
250+ 0.15 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N025 50M060100N025 Essentra Components skuAsset?mediaId=168476 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 1.126" (28.60mm)
Length - Below Head: 0.984" (25.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1520 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
67+ 0.26 EUR
500+ 0.19 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 48
50M060100N030 50M060100N030 Essentra Components skuAsset?mediaId=168477 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 1.323" (33.60mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+ 0.27 EUR
75+ 0.24 EUR
90+ 0.2 EUR
96+ 0.18 EUR
250+ 0.16 EUR
500+ 0.15 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N035 50M060100N035 Essentra Components skuAsset?mediaId=168478 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 1.520" (38.60mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
64+ 0.28 EUR
74+ 0.24 EUR
89+ 0.2 EUR
94+ 0.19 EUR
100+ 0.18 EUR
250+ 0.16 EUR
500+ 0.15 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N050 50M060100N050 Essentra Components skuAsset?mediaId=168481 Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 2.110" (53.60mm)
Length - Below Head: 1.969" (50.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
62+ 0.29 EUR
73+ 0.24 EUR
87+ 0.2 EUR
93+ 0.19 EUR
100+ 0.18 EUR
250+ 0.16 EUR
500+ 0.15 EUR
Mindestbestellmenge: 56
BSC100N03MSGATMA1 BSC100N03MSGATMA1 Infineon Technologies Infineon_BSC100N03MSG_DS_v02_01_en-1226358.pdf MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
auf Bestellung 18424 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.88 EUR
10+ 0.78 EUR
100+ 0.59 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 4
BSC100N03MSGATMA1 BSC100N03MSGATMA1 Infineon Technologies 648bsc100n03msg_rev1.16.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC100N06LS3 G BSC100N06LS3 G Infineon Technologies Infineon_BSC100N06LS3_G_DataSheet_v02_04_EN-3361153.pdf MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
auf Bestellung 37592 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.88 EUR
10+ 1.56 EUR
100+ 1.21 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
2500+ 0.79 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 2
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES BSC100N06LS3G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 3645 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
70+ 1.03 EUR
93+ 0.77 EUR
98+ 0.73 EUR
Mindestbestellmenge: 41
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES BSC100N06LS3G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3645 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.74 EUR
70+ 1.03 EUR
93+ 0.77 EUR
98+ 0.73 EUR
Mindestbestellmenge: 41
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 Infineon Technologies BSC100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0823387fd7 Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 12138 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
12+ 1.55 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
2000+ 0.78 EUR
Mindestbestellmenge: 10
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 Infineon Technologies BSC100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0823387fd7 Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.74 EUR
10000+ 0.71 EUR
Mindestbestellmenge: 5000
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 Infineon Technologies Infineon_BSC100N06LS3_G_DataSheet_v02_04_EN-3361153.pdf MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
auf Bestellung 34122 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.9 EUR
10+ 1.56 EUR
100+ 1.21 EUR
500+ 1.02 EUR
1000+ 0.78 EUR
2500+ 0.77 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 2
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 Infineon Technologies 490bsc100n06ls3_rev2.2.pdffolderiddb3a30431ddc9372011ebafa04517f8bfi.pdf Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N03LS G BSZ100N03LS G Infineon Technologies Infineon_BSZ100N03LS_G_DataSheet_v02_02_EN-3360996.pdf MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 3259 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.08 EUR
100+ 0.76 EUR
500+ 0.64 EUR
1000+ 0.48 EUR
5000+ 0.44 EUR
Mindestbestellmenge: 3
BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 Infineon Technologies infineon-bsz100n03lsg-datasheet-v02_01-en.pdf Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N03MS G BSZ100N03MS G Infineon Technologies Infineon_BSZ100N03MS_G_DataSheet_v02_01_EN-3360905.pdf MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 4875 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.34 EUR
10+ 1.18 EUR
100+ 0.81 EUR
500+ 0.67 EUR
1000+ 0.57 EUR
5000+ 0.48 EUR
Mindestbestellmenge: 3
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies Infineon_BSZ100N03MS_G_DataSheet_v02_01_EN-3360905.pdf MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 15181 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.93 EUR
10+ 0.83 EUR
100+ 0.63 EUR
500+ 0.55 EUR
1000+ 0.47 EUR
2500+ 0.46 EUR
Mindestbestellmenge: 4
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316 Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.48 EUR
Mindestbestellmenge: 5000
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316 Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 9952 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
16+ 1.15 EUR
100+ 0.8 EUR
500+ 0.67 EUR
1000+ 0.57 EUR
2000+ 0.51 EUR
Mindestbestellmenge: 14
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies infineon-bsz100n03msg-datasheet-v02_01-en.pdf Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N06LS3 G BSZ100N06LS3 G Infineon Technologies Infineon_BSZ100N06LS3_G_DataSheet_v02_04_EN-3361137.pdf MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
auf Bestellung 13212 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.8 EUR
10+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
2500+ 0.75 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 2
BSZ100N06LS3 G Infineon Technologies N-канальний ПТ; Udss, В = 60; Id = 11 А; Ciss, пФ @ Uds, В = 3500 @ 30; Qg, нКл = 45 @ 10 В; Rds = 10 мОм @ 20 A, 10 В; Ugs(th) = 2,2 В @ 23 мкА; Р, Вт = 2,1 Вт; Тексп, °C = -55...+150; Тип монт. = smd; Id2 = 20 A; Ptot2, Вт = 50; PG-TSDSON-8
auf Bestellung 2618 Stücke:
Lieferzeit 14-21 Tag (e)
6+1.11 EUR
10+ 0.95 EUR
100+ 0.84 EUR
Mindestbestellmenge: 6
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 Infineon Technologies BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 96060 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
17+ 1.04 EUR
100+ 0.81 EUR
500+ 0.69 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 14
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 Infineon Technologies Infineon_BSZ100N06LS3_G_DataSheet_v02_04_EN-3361137.pdf MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
auf Bestellung 13303 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.28 EUR
10+ 1.05 EUR
100+ 0.82 EUR
500+ 0.71 EUR
Mindestbestellmenge: 3
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 Infineon Technologies BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.68 EUR
Mindestbestellmenge: 5000
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 Infineon Technologies bsz100n06ls3_rev2.0.pdf Trans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N06NS BSZ100N06NS Infineon Technologies Infineon_BSZ100N06NS_DataSheet_v02_02_EN-3361138.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 18701 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.37 EUR
10+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.61 EUR
5000+ 0.54 EUR
Mindestbestellmenge: 3
BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 23296 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 13
BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 20000 Stücke:
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5000+0.54 EUR
10000+ 0.51 EUR
Mindestbestellmenge: 5000
BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies Infineon_BSZ100N06NS_DataSheet_v02_02_EN-3361138.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 44356 Stücke:
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3+1.36 EUR
10+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
5000+ 0.54 EUR
Mindestbestellmenge: 3
BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies infineon-bsz100n06ns-datasheet-v02_02-en.pdf Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
DI100N04D1-AQ DI100N04D1-AQ Diotec Semiconductor di100n04d1.pdf Description: MOSFET, DPAK, 40V, 100A, 0, 69W
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Power Dissipation (Max): 69W
Supplier Device Package: TO-252 (DPAK)
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+ 2.16 EUR
100+ 1.68 EUR
500+ 1.43 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
DI100N04PQ-AQ DI100N04PQ-AQ Diotec Semiconductor di100n04pq.pdf Description: MOSFET PWRQFN 5X6 40V 0.0021OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2000+ 0.71 EUR
Mindestbestellmenge: 11
DI100N04PQ-AQ DI100N04PQ-AQ Diotec Semiconductor di100n04pq.pdf MOSFET MOSFET, PowerQFN 5x6, 40V, 100A, 150C, N, AEC-Q101
auf Bestellung 4915 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.87 EUR
10+ 2.24 EUR
100+ 1.34 EUR
500+ 1.33 EUR
1000+ 1.29 EUR
2500+ 1.14 EUR
5000+ 1.07 EUR
DI100N04PQ-AQ DI100N04PQ-AQ Diotec Semiconductor di100n04pq.pdf Description: MOSFET PWRQFN 5X6 40V 0.0021OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.68 EUR
Mindestbestellmenge: 5000
GT100N04D3 GT100N04D3 Goford Semiconductor GOFORD-GT100N04D3.pdf Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 4559 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
32+ 0.55 EUR
100+ 0.38 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 28
HSMH-A100-N00J1 HSMH-A100-N00J1 BROADCOM (AVAGO) HSMH-A100-L00J1.pdf Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; red; 28.5÷50mcd; 3.5x2.8x1.9mm; 120°; 20mA
Mounting: SMD
Operating voltage: 1.9...2.6V
LED colour: red
Type of diode: LED
Wavelength: 637nm
LED lens: transparent
Luminosity: 28.5...50mcd
LED current: 20mA
Viewing angle: 120°
Dimensions: 3.5x2.8x1.9mm
Case: 3528; PLCC2
Power: 60mW
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1300 Stücke:
Lieferzeit 7-14 Tag (e)
115+0.62 EUR
190+ 0.38 EUR
295+ 0.24 EUR
315+ 0.23 EUR
Mindestbestellmenge: 115
HSMH-A100-N00J1 HSMH-A100-N00J1 Broadcom Limited HSMx-A10x-xxxxx-PLCC-2-SMT-LED-Indicator-DS Description: LED RED CLEAR 2PLCC SMD
Packaging: Cut Tape (CT)
Package / Case: 2-PLCC
Color: Red
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 50mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 120°
Height (Max): 2.10mm
Wavelength - Peak: 645nm
Wavelength - Dominant: 637nm
Supplier Device Package: 2-PLCC
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 2.20mm Dia
auf Bestellung 23410 Stücke:
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21+0.84 EUR
34+ 0.52 EUR
100+ 0.3 EUR
1000+ 0.24 EUR
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HSMH-A100-N00J1 HSMH-A100-N00J1 Broadcom Limited HSMx-A10x-xxxxx-PLCC-2-SMT-LED-Indicator-DS Description: LED RED CLEAR 2PLCC SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-PLCC
Color: Red
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 50mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 120°
Height (Max): 2.10mm
Wavelength - Peak: 645nm
Wavelength - Dominant: 637nm
Supplier Device Package: 2-PLCC
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 2.20mm Dia
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.22 EUR
6000+ 0.2 EUR
10000+ 0.18 EUR
Mindestbestellmenge: 2000
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.96 EUR
10000+ 0.91 EUR
Mindestbestellmenge: 5000
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon_IAUC100N04S6L014_DataSheet_v01_00_EN-1840614.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 8613 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.45 EUR
10+ 1.85 EUR
100+ 1.53 EUR
500+ 1.32 EUR
1000+ 1.01 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 2
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23349 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2000+ 1 EUR
Mindestbestellmenge: 8
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 Infineon Technologies Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Description: IAUC100N04S6L020ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.83 EUR
10000+ 0.79 EUR
Mindestbestellmenge: 5000
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 Infineon Technologies Infineon_IAUC100N04S6L020_DataSheet_v01_00_EN-1840563.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 19913 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.04 EUR
10+ 1.74 EUR
100+ 1.34 EUR
500+ 1.14 EUR
1000+ 0.88 EUR
2500+ 0.87 EUR
5000+ 0.83 EUR
Mindestbestellmenge: 2
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 Infineon Technologies Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Description: IAUC100N04S6L020ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15130 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
11+ 1.72 EUR
100+ 1.34 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 Infineon Technologies infineon-iauc100n04s6l020-datasheet-v01_00-en.pdf Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.7 EUR
10000+ 0.67 EUR
Mindestbestellmenge: 5000
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 46882 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
13+ 1.45 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
2000+ 0.73 EUR
Mindestbestellmenge: 10
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon_IAUC100N04S6L025_DataSheet_v01_00_EN-1840534.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.78 EUR
10+ 1.46 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.74 EUR
5000+ 0.7 EUR
Mindestbestellmenge: 2
IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 Infineon Technologies Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e Description: IAUC100N04S6N015ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.96 EUR
10000+ 0.91 EUR
Mindestbestellmenge: 5000
IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 Infineon Technologies Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e Description: IAUC100N04S6N015ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10020 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2000+ 1 EUR
Mindestbestellmenge: 8
IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 Infineon Technologies Infineon_IAUC100N04S6N015_DataSheet_v01_00_EN-1840499.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.48 EUR
10+ 1.9 EUR
100+ 1.54 EUR
500+ 1.32 EUR
1000+ 1.01 EUR
5000+ 0.96 EUR
Mindestbestellmenge: 2
100N03LS
Hersteller: infineon
08+
auf Bestellung 150000 Stücke:
Lieferzeit 21-28 Tag (e)
100N03MS
Hersteller: infineon
08+
auf Bestellung 150000 Stücke:
Lieferzeit 21-28 Tag (e)
381LL682M100N062 381LL.pdf
381LL682M100N062
Hersteller: Cornell Dubilier - CDE
Aluminium Electrolytic Capacitors - Snap In 6800uF 100V 20% 8K hours
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+32.4 EUR
10+ 31.75 EUR
20+ 26.45 EUR
50+ 23.65 EUR
383LX123M100N082 381-383.pdf
383LX123M100N082
Hersteller: Cornell Dubilier Knowles
Description: CAP ALUM 12000UF 20% 100V SNAP
Tolerance: ±20%
Packaging: Bulk
Package / Case: Radial, Can - Snap-In - 4 Lead
Size / Dimension: 1.575" Dia (40.00mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Applications: General Purpose
ESR (Equivalent Series Resistance): 21mOhm
Lifetime @ Temp.: 3000 Hrs @ 105°C
Height - Seated (Max): 3.228" (82.00mm)
Part Status: Active
Capacitance: 12000 µF
Voltage - Rated: 100 V
Ripple Current @ Low Frequency: 6.44 A @ 120 Hz
Ripple Current @ High Frequency: 7.4 A @ 20 kHz
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+24.94 EUR
24+ 23.07 EUR
120+ 17.96 EUR
50M060100N008 5020.PDF
50M060100N008
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.457" (11.60mm)
Length - Below Head: 0.315" (8.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
67+ 0.26 EUR
79+ 0.23 EUR
94+ 0.19 EUR
100+ 0.18 EUR
104+ 0.17 EUR
250+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N010 skuAsset?mediaId=168471
50M060100N010
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.535" (13.60mm)
Length - Below Head: 0.394" (10.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
67+ 0.26 EUR
78+ 0.23 EUR
93+ 0.19 EUR
100+ 0.18 EUR
104+ 0.17 EUR
250+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N016 skuAsset?mediaId=168473
50M060100N016
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.772" (19.60mm)
Length - Below Head: 0.630" (16.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
66+ 0.27 EUR
77+ 0.23 EUR
93+ 0.19 EUR
99+ 0.18 EUR
103+ 0.17 EUR
250+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N020 skuAsset?mediaId=168474
50M060100N020
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 0.929" (23.60mm)
Length - Below Head: 0.787" (20.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
65+ 0.27 EUR
77+ 0.23 EUR
92+ 0.19 EUR
98+ 0.18 EUR
102+ 0.17 EUR
250+ 0.15 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N025 skuAsset?mediaId=168476
50M060100N025
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 1.126" (28.60mm)
Length - Below Head: 0.984" (25.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
auf Bestellung 1520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
67+ 0.26 EUR
500+ 0.19 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 48
50M060100N030 skuAsset?mediaId=168477
50M060100N030
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 1.323" (33.60mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
65+ 0.27 EUR
75+ 0.24 EUR
90+ 0.2 EUR
96+ 0.18 EUR
250+ 0.16 EUR
500+ 0.15 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N035 skuAsset?mediaId=168478
50M060100N035
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 1.520" (38.60mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
64+ 0.28 EUR
74+ 0.24 EUR
89+ 0.2 EUR
94+ 0.19 EUR
100+ 0.18 EUR
250+ 0.16 EUR
500+ 0.15 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 56
50M060100N050 skuAsset?mediaId=168481
50M060100N050
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M6 X 1 THREAD
Packaging: Bulk
Material: Nylon
Thread Size: M6x1
Type: Machine Screw
Length - Overall: 2.110" (53.60mm)
Length - Below Head: 1.969" (50.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.472" (12.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
62+ 0.29 EUR
73+ 0.24 EUR
87+ 0.2 EUR
93+ 0.19 EUR
100+ 0.18 EUR
250+ 0.16 EUR
500+ 0.15 EUR
Mindestbestellmenge: 56
BSC100N03MSGATMA1 Infineon_BSC100N03MSG_DS_v02_01_en-1226358.pdf
BSC100N03MSGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
auf Bestellung 18424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.88 EUR
10+ 0.78 EUR
100+ 0.59 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 4
BSC100N03MSGATMA1 648bsc100n03msg_rev1.16.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf
BSC100N03MSGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC100N06LS3 G Infineon_BSC100N06LS3_G_DataSheet_v02_04_EN-3361153.pdf
BSC100N06LS3 G
Hersteller: Infineon Technologies
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
auf Bestellung 37592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.88 EUR
10+ 1.56 EUR
100+ 1.21 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
2500+ 0.79 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 2
BSC100N06LS3GATMA1 BSC100N06LS3G.pdf
BSC100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 3645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
41+1.74 EUR
70+ 1.03 EUR
93+ 0.77 EUR
98+ 0.73 EUR
Mindestbestellmenge: 41
BSC100N06LS3GATMA1 BSC100N06LS3G.pdf
BSC100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3645 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.74 EUR
70+ 1.03 EUR
93+ 0.77 EUR
98+ 0.73 EUR
Mindestbestellmenge: 41
BSC100N06LS3GATMA1 BSC100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0823387fd7
BSC100N06LS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 12138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.88 EUR
12+ 1.55 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
2000+ 0.78 EUR
Mindestbestellmenge: 10
BSC100N06LS3GATMA1 BSC100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0823387fd7
BSC100N06LS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.74 EUR
10000+ 0.71 EUR
Mindestbestellmenge: 5000
BSC100N06LS3GATMA1 Infineon_BSC100N06LS3_G_DataSheet_v02_04_EN-3361153.pdf
BSC100N06LS3GATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
auf Bestellung 34122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.9 EUR
10+ 1.56 EUR
100+ 1.21 EUR
500+ 1.02 EUR
1000+ 0.78 EUR
2500+ 0.77 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 2
BSC100N06LS3GATMA1 490bsc100n06ls3_rev2.2.pdffolderiddb3a30431ddc9372011ebafa04517f8bfi.pdf
BSC100N06LS3GATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N03LS G Infineon_BSZ100N03LS_G_DataSheet_v02_02_EN-3360996.pdf
BSZ100N03LS G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 3259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.08 EUR
100+ 0.76 EUR
500+ 0.64 EUR
1000+ 0.48 EUR
5000+ 0.44 EUR
Mindestbestellmenge: 3
BSZ100N03LSGATMA1 infineon-bsz100n03lsg-datasheet-v02_01-en.pdf
BSZ100N03LSGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N03MS G Infineon_BSZ100N03MS_G_DataSheet_v02_01_EN-3360905.pdf
BSZ100N03MS G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 4875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.34 EUR
10+ 1.18 EUR
100+ 0.81 EUR
500+ 0.67 EUR
1000+ 0.57 EUR
5000+ 0.48 EUR
Mindestbestellmenge: 3
BSZ100N03MSGATMA1 Infineon_BSZ100N03MS_G_DataSheet_v02_01_EN-3360905.pdf
BSZ100N03MSGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 15181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.93 EUR
10+ 0.83 EUR
100+ 0.63 EUR
500+ 0.55 EUR
1000+ 0.47 EUR
2500+ 0.46 EUR
Mindestbestellmenge: 4
BSZ100N03MSGATMA1 BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316
BSZ100N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.48 EUR
Mindestbestellmenge: 5000
BSZ100N03MSGATMA1 BSZ100N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113de38a27f0316
BSZ100N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 9952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.34 EUR
16+ 1.15 EUR
100+ 0.8 EUR
500+ 0.67 EUR
1000+ 0.57 EUR
2000+ 0.51 EUR
Mindestbestellmenge: 14
BSZ100N03MSGATMA1 infineon-bsz100n03msg-datasheet-v02_01-en.pdf
BSZ100N03MSGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N06LS3 G Infineon_BSZ100N06LS3_G_DataSheet_v02_04_EN-3361137.pdf
BSZ100N06LS3 G
Hersteller: Infineon Technologies
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
auf Bestellung 13212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.8 EUR
10+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
2500+ 0.75 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 2
BSZ100N06LS3 G
Hersteller: Infineon Technologies
N-канальний ПТ; Udss, В = 60; Id = 11 А; Ciss, пФ @ Uds, В = 3500 @ 30; Qg, нКл = 45 @ 10 В; Rds = 10 мОм @ 20 A, 10 В; Ugs(th) = 2,2 В @ 23 мкА; Р, Вт = 2,1 Вт; Тексп, °C = -55...+150; Тип монт. = smd; Id2 = 20 A; Ptot2, Вт = 50; PG-TSDSON-8
auf Bestellung 2618 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+1.11 EUR
10+ 0.95 EUR
100+ 0.84 EUR
Mindestbestellmenge: 6
BSZ100N06LS3GATMA1 BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a
BSZ100N06LS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 96060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
17+ 1.04 EUR
100+ 0.81 EUR
500+ 0.69 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 14
BSZ100N06LS3GATMA1 Infineon_BSZ100N06LS3_G_DataSheet_v02_04_EN-3361137.pdf
BSZ100N06LS3GATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
auf Bestellung 13303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.28 EUR
10+ 1.05 EUR
100+ 0.82 EUR
500+ 0.71 EUR
Mindestbestellmenge: 3
BSZ100N06LS3GATMA1 BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a
BSZ100N06LS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
Mindestbestellmenge: 5000
BSZ100N06LS3GATMA1 bsz100n06ls3_rev2.0.pdf
BSZ100N06LS3GATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ100N06NS Infineon_BSZ100N06NS_DataSheet_v02_02_EN-3361138.pdf
BSZ100N06NS
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 18701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.37 EUR
10+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.61 EUR
5000+ 0.54 EUR
Mindestbestellmenge: 3
BSZ100N06NSATMA1 Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 23296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 13
BSZ100N06NSATMA1 Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.54 EUR
10000+ 0.51 EUR
Mindestbestellmenge: 5000
BSZ100N06NSATMA1 Infineon_BSZ100N06NS_DataSheet_v02_02_EN-3361138.pdf
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 44356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.36 EUR
10+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
5000+ 0.54 EUR
Mindestbestellmenge: 3
BSZ100N06NSATMA1 infineon-bsz100n06ns-datasheet-v02_02-en.pdf
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
DI100N04D1-AQ di100n04d1.pdf
DI100N04D1-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, DPAK, 40V, 100A, 0, 69W
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Power Dissipation (Max): 69W
Supplier Device Package: TO-252 (DPAK)
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
10+ 2.16 EUR
100+ 1.68 EUR
500+ 1.43 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
DI100N04PQ-AQ di100n04pq.pdf
DI100N04PQ-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0021OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2000+ 0.71 EUR
Mindestbestellmenge: 11
DI100N04PQ-AQ di100n04pq.pdf
DI100N04PQ-AQ
Hersteller: Diotec Semiconductor
MOSFET MOSFET, PowerQFN 5x6, 40V, 100A, 150C, N, AEC-Q101
auf Bestellung 4915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.87 EUR
10+ 2.24 EUR
100+ 1.34 EUR
500+ 1.33 EUR
1000+ 1.29 EUR
2500+ 1.14 EUR
5000+ 1.07 EUR
DI100N04PQ-AQ di100n04pq.pdf
DI100N04PQ-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0021OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
Mindestbestellmenge: 5000
GT100N04D3 GOFORD-GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 4559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
32+ 0.55 EUR
100+ 0.38 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 28
HSMH-A100-N00J1 HSMH-A100-L00J1.pdf
HSMH-A100-N00J1
Hersteller: BROADCOM (AVAGO)
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; red; 28.5÷50mcd; 3.5x2.8x1.9mm; 120°; 20mA
Mounting: SMD
Operating voltage: 1.9...2.6V
LED colour: red
Type of diode: LED
Wavelength: 637nm
LED lens: transparent
Luminosity: 28.5...50mcd
LED current: 20mA
Viewing angle: 120°
Dimensions: 3.5x2.8x1.9mm
Case: 3528; PLCC2
Power: 60mW
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
115+0.62 EUR
190+ 0.38 EUR
295+ 0.24 EUR
315+ 0.23 EUR
Mindestbestellmenge: 115
HSMH-A100-N00J1 HSMx-A10x-xxxxx-PLCC-2-SMT-LED-Indicator-DS
HSMH-A100-N00J1
Hersteller: Broadcom Limited
Description: LED RED CLEAR 2PLCC SMD
Packaging: Cut Tape (CT)
Package / Case: 2-PLCC
Color: Red
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 50mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 120°
Height (Max): 2.10mm
Wavelength - Peak: 645nm
Wavelength - Dominant: 637nm
Supplier Device Package: 2-PLCC
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 2.20mm Dia
auf Bestellung 23410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
34+ 0.52 EUR
100+ 0.3 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 21
HSMH-A100-N00J1 HSMx-A10x-xxxxx-PLCC-2-SMT-LED-Indicator-DS
HSMH-A100-N00J1
Hersteller: Broadcom Limited
Description: LED RED CLEAR 2PLCC SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-PLCC
Color: Red
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 50mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 120°
Height (Max): 2.10mm
Wavelength - Peak: 645nm
Wavelength - Dominant: 637nm
Supplier Device Package: 2-PLCC
Lens Transparency: Clear
Lens Style: Round with Flat Top
Lens Size: 2.20mm Dia
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.22 EUR
6000+ 0.2 EUR
10000+ 0.18 EUR
Mindestbestellmenge: 2000
IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.96 EUR
10000+ 0.91 EUR
Mindestbestellmenge: 5000
IAUC100N04S6L014ATMA1 Infineon_IAUC100N04S6L014_DataSheet_v01_00_EN-1840614.pdf
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
auf Bestellung 8613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.45 EUR
10+ 1.85 EUR
100+ 1.53 EUR
500+ 1.32 EUR
1000+ 1.01 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 2
IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2000+ 1 EUR
Mindestbestellmenge: 8
IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
IAUC100N04S6L020ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L020ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.83 EUR
10000+ 0.79 EUR
Mindestbestellmenge: 5000
IAUC100N04S6L020ATMA1 Infineon_IAUC100N04S6L020_DataSheet_v01_00_EN-1840563.pdf
IAUC100N04S6L020ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
auf Bestellung 19913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.04 EUR
10+ 1.74 EUR
100+ 1.34 EUR
500+ 1.14 EUR
1000+ 0.88 EUR
2500+ 0.87 EUR
5000+ 0.83 EUR
Mindestbestellmenge: 2
IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
IAUC100N04S6L020ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L020ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
11+ 1.72 EUR
100+ 1.34 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
IAUC100N04S6L020ATMA1 infineon-iauc100n04s6l020-datasheet-v01_00-en.pdf
IAUC100N04S6L020ATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.7 EUR
10000+ 0.67 EUR
Mindestbestellmenge: 5000
IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 46882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.45 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
2000+ 0.73 EUR
Mindestbestellmenge: 10
IAUC100N04S6L025ATMA1 Infineon_IAUC100N04S6L025_DataSheet_v01_00_EN-1840534.pdf
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.78 EUR
10+ 1.46 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.74 EUR
5000+ 0.7 EUR
Mindestbestellmenge: 2
IAUC100N04S6N015ATMA1 Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e
IAUC100N04S6N015ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N015ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.96 EUR
10000+ 0.91 EUR
Mindestbestellmenge: 5000
IAUC100N04S6N015ATMA1 Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e
IAUC100N04S6N015ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N015ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2000+ 1 EUR
Mindestbestellmenge: 8
IAUC100N04S6N015ATMA1 Infineon_IAUC100N04S6N015_DataSheet_v01_00_EN-1840499.pdf
IAUC100N04S6N015ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.48 EUR
10+ 1.9 EUR
100+ 1.54 EUR
500+ 1.32 EUR
1000+ 1.01 EUR
5000+ 0.96 EUR
Mindestbestellmenge: 2
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