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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+2.82 EUR
25+2.66 EUR
50+2.54 EUR
100+2.44 EUR
500+2.23 EUR
1000+2.16 EUR
Mindestbestellmenge: 6
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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies Infineon_6EDL04x065xR_6EDL04N03PR_DataSheet_v02_00_EN.pdf Gate Drivers LEVEL SHIFT DRIVER
auf Bestellung 2715 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.87 EUR
10+2.73 EUR
25+2.45 EUR
100+2.36 EUR
500+2.16 EUR
1000+2.01 EUR
3000+1.9 EUR
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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.05 EUR
Mindestbestellmenge: 3000
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6EDL04N065PTXUMA1 6EDL04N065PTXUMA1 Infineon Technologies Infineon_6EDL04x065xT_DataSheet_v02_00_EN.pdf Gate Drivers LEVEL SHIFT DRIVER
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.05 EUR
10+3.01 EUR
25+2.76 EUR
100+2.46 EUR
250+2.32 EUR
500+2.24 EUR
1000+2.08 EUR
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6EDL04N065PTXUMA1 6EDL04N065PTXUMA1 Infineon Technologies 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.01 EUR
Mindestbestellmenge: 1000
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6EDL04N065PTXUMA1 6EDL04N065PTXUMA1 Infineon Technologies 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.78 EUR
25+2.54 EUR
100+2.27 EUR
250+2.14 EUR
500+2.09 EUR
Mindestbestellmenge: 5
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6EDL04N06PT 6EDL04N06PT Infineon Technologies Infineon_6EDL04X0XXX_DataSheet_v02_08_EN.pdf Gate Drivers 600V 3-Phase,0.375A BSD, OCP, EN & FAULT
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.46 EUR
10+3.71 EUR
25+3.41 EUR
100+2.97 EUR
250+2.8 EUR
500+2.45 EUR
1000+2.01 EUR
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6EDL04N06PTXUMA1 6EDL04N06PTXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1699 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.78 EUR
25+2.54 EUR
100+2.27 EUR
250+2.14 EUR
500+2.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
6EDL04N06PTXUMA1 6EDL04N06PTXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.01 EUR
Mindestbestellmenge: 1000
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6EDL04N06PTXUMA1 6EDL04N06PTXUMA1 Infineon Technologies Infineon_6EDL04X0XXX_DataSheet_v02_08_EN.pdf Gate Drivers 600V 3-Phase,0.375A BSD, OCP, EN & FAULT
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.91 EUR
10+3.01 EUR
25+2.76 EUR
100+2.46 EUR
250+2.43 EUR
500+2.39 EUR
1000+2.32 EUR
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ACPL-074N-060E ACPL-074N-060E Broadcom Limited ACPL.pdf Description: OPTOISO 3.75KV 2CH OPN DRAIN 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 6ns, 5ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Number of Channels: 2
Current - Output / Channel: 10 mA
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.08 EUR
10+6.02 EUR
100+4.8 EUR
500+4.27 EUR
Mindestbestellmenge: 3
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ACPL-074N-060E ACPL-074N-060E Broadcom / Avago Broadcom_08-29-2025_ACPL.pdf High Speed Optocouplers Optocoupler (15MBd), LF+VDE+UL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.18 EUR
10+5.84 EUR
100+4.73 EUR
500+4.15 EUR
1000+3.98 EUR
2500+3.84 EUR
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BSC014N06NS BSC014N06NS Infineon Technologies Infineon_BSC014N06NS_DataSheet_v02_05_EN.pdf MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS
auf Bestellung 6613 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.2 EUR
10+4.7 EUR
100+3.68 EUR
500+3.13 EUR
5000+2.66 EUR
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BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 7380 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.02 EUR
10+4.64 EUR
100+3.28 EUR
500+2.81 EUR
Mindestbestellmenge: 3
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BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies Infineon_BSC014N06NS_DataSheet_v02_05_EN.pdf MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS
auf Bestellung 4627 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.2 EUR
10+4.7 EUR
100+3.41 EUR
500+2.87 EUR
2500+2.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.3 EUR
Mindestbestellmenge: 5000
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BSC014N06NSTATMA1 BSC014N06NSTATMA1 Infineon Technologies Infineon_BSC014N06NST_DataSheet_v02_02_EN.pdf MOSFETs IFX FET 60V
auf Bestellung 4928 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.99 EUR
10+4.56 EUR
100+3.57 EUR
500+2.97 EUR
1000+2.76 EUR
2500+2.59 EUR
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BSC014N06NSTATMA1 BSC014N06NSTATMA1 Infineon Technologies Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.24 EUR
Mindestbestellmenge: 5000
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BSC014N06NSTATMA1 BSC014N06NSTATMA1 Infineon Technologies Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 5220 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.92 EUR
10+4.55 EUR
100+3.21 EUR
500+2.75 EUR
Mindestbestellmenge: 3
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BSC034N06NS BSC034N06NS Infineon Technologies Infineon_BSC034N06NS_DataSheet_v02_03_EN.pdf MOSFETs IFX FET 60V
auf Bestellung 479 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.17 EUR
10+2.68 EUR
100+1.87 EUR
500+1.57 EUR
1000+1.47 EUR
5000+1.25 EUR
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BSC034N06NSATMA1 BSC034N06NSATMA1 Infineon Technologies Infineon-BSC034N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c65286a70be Description: MOSFET N-CH 60V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.32 EUR
Mindestbestellmenge: 5
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BSC034N06NSATMA1 BSC034N06NSATMA1 Infineon Technologies Infineon_BSC034N06NS_DataSheet_v02_03_EN.pdf MOSFETs IFX FET 60V
auf Bestellung 12647 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.07 EUR
10+2.43 EUR
100+1.76 EUR
500+1.44 EUR
1000+1.34 EUR
2500+1.31 EUR
5000+1.25 EUR
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BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.58 EUR
Mindestbestellmenge: 5000
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BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 8610 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
2000+0.64 EUR
Mindestbestellmenge: 8
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BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon_BSC094N06LS5_DataSheet_v02_02_EN.pdf MOSFETs DIFFERENTIATED MOSFETS
auf Bestellung 12736 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.32 EUR
10+1.47 EUR
100+0.99 EUR
500+0.8 EUR
1000+0.67 EUR
5000+0.59 EUR
Mindestbestellmenge: 2
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DI114N06PQ DI114N06PQ DIOTEC SEMICONDUCTOR di114n06pq.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72.5A
Pulsed drain current: 480A
Power dissipation: 63.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4574 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
44+1.64 EUR
50+1.44 EUR
100+1.32 EUR
500+1.23 EUR
Mindestbestellmenge: 40
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IPB014N06N IPB014N06N Infineon Technologies Infineon_IPB014N06N_DS_v02_02_en.pdf MOSFETs N-Ch 60V 180A D2PAK-6
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.48 EUR
10+4.89 EUR
100+3.84 EUR
500+3.33 EUR
1000+2.82 EUR
2000+2.76 EUR
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IPB014N06NATMA1 IPB014N06NATMA1 INFINEON TECHNOLOGIES IPB014N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
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18+4 EUR
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IPB014N06NATMA1 IPB014N06NATMA1 Infineon Technologies IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873 Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 3000 Stücke:
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2000+2.44 EUR
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IPB014N06NATMA1 IPB014N06NATMA1 Infineon Technologies IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873 Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 3654 Stücke:
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IPB014N06NATMA1 IPB014N06NATMA1 Infineon Technologies Infineon_IPB014N06N_DS_v02_02_en.pdf MOSFETs N-Ch 60V 180A D2PAK-6
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500+3.29 EUR
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IPB034N06N3G IPB034N06N3G Infineon Technologies INFNS16279-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3146 Stücke:
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IPD034N06N3 G IPD034N06N3 G Infineon Technologies Infineon_IPD034N06N3_DS_v02_00_en.pdf MOSFETs N-Ch 60V 100A DPAK-2 OptiMOS 3
auf Bestellung 2340 Stücke:
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1+3.73 EUR
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100+1.64 EUR
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES IPD034N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 647 Stücke:
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29+2.5 EUR
36+1.99 EUR
41+1.76 EUR
55+1.32 EUR
100+1.3 EUR
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 Infineon Technologies IPD034N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a97343b4cf3 Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 29629 Stücke:
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5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 Infineon Technologies IPD034N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a97343b4cf3 Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 27500 Stücke:
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5000+0.97 EUR
7500+0.93 EUR
12500+0.92 EUR
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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+0.49 EUR
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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies Infineon_IPD14N06S2_80_DS_v01_00_en.pdf MOSFETs MOSFET_)40V 60V)
auf Bestellung 2852 Stücke:
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3+1.35 EUR
10+1.08 EUR
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500+0.61 EUR
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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3199 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
15+1.2 EUR
100+0.79 EUR
500+0.61 EUR
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IPI084N06L3GXKSA1 IPI084N06L3GXKSA1 Infineon Technologies IPx084N06L3G.pdf Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1027 Stücke:
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405+1.11 EUR
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IPP014N06NF2SAKMA2 IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
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27+2.69 EUR
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IPP014N06NF2SAKMA2 IPP014N06NF2SAKMA2 Infineon Technologies Infineon-IPP014N06NF2S-DataSheet-v02_03-EN.pdf MOSFETs IFX FET 60V
auf Bestellung 87 Stücke:
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1+7.15 EUR
10+4.28 EUR
100+3.7 EUR
500+2.9 EUR
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IPP014N06NF2SAKMA2 IPP014N06NF2SAKMA2 Infineon Technologies Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
auf Bestellung 567 Stücke:
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3+7.5 EUR
50+3.87 EUR
100+3.52 EUR
500+2.91 EUR
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
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12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Infineon Technologies IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7 Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 400 Stücke:
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90+5.01 EUR
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IPP084N06L3GXKSA1 IPP084N06L3GXKSA1 Infineon Technologies IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2 Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 30364 Stücke:
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259+1.74 EUR
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ISG0614N06NM5HATMA1 ISG0614N06NM5HATMA1 Infineon Technologies Infineon-ISG0614N06NM5H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d894fa3e04ab0 Description: MOSFET 2N-CH 60V 31A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-VITFN-10-1
auf Bestellung 1402 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.78 EUR
10+5.16 EUR
100+3.67 EUR
500+3.27 EUR
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ISG0614N06NM5HATMA1 ISG0614N06NM5HATMA1 Infineon Technologies Infineon_ISG0614N06NM5H_DataSheet_v02_00_EN.pdf MOSFETs IFX FET 60V
auf Bestellung 3509 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.43 EUR
10+4.93 EUR
100+3.52 EUR
500+3.31 EUR
1000+3.29 EUR
3000+3.08 EUR
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ISG0614N06NM5HSCATMA1 ISG0614N06NM5HSCATMA1 Infineon Technologies Infineon-ISG0614N06NM5HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8950709b4b9d Description: MOSFET 2N-CH 60V 31A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-WHITFN-10-1
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.36 EUR
10+5.57 EUR
100+3.98 EUR
500+3.6 EUR
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ISG0614N06NM5HSCATMA1 ISG0614N06NM5HSCATMA1 Infineon Technologies Infineon_ISG0614N06NM5HSC_DataSheet_v02_00_EN.pdf MOSFETs IFX FET 60V
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.97 EUR
10+5.32 EUR
100+3.8 EUR
500+3.64 EUR
1000+3.59 EUR
3000+3.41 EUR
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ISZ034N06LM5ATMA1 ISZ034N06LM5ATMA1 Infineon Technologies Infineon-ISZ034N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f6955876aa2 Description: MOSFET N-CH 60V 19A/112A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
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ISZ034N06LM5ATMA1 ISZ034N06LM5ATMA1 Infineon Technologies Infineon_ISZ034N06LM5_DataSheet_v02_00_EN.pdf MOSFETs IFX FET 60V
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100+1.87 EUR
500+1.64 EUR
1000+1.48 EUR
5000+1.36 EUR
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M85049/2924N06 M85049/2924N06 Amphenol Pcd Circular MIL Spec Backshells BACKSHELL NON ENV ST NICKEL SZ 24
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NTD24N06-1G NTD24N06-1G onsemi ntd24n06-d.pdf Description: MOSFET N-CH 60V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 3148 Stücke:
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NTD24N06LT4G NTD24N06LT4G ONSEMI NTD24N06L_STD24N06L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2345 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
77+0.93 EUR
99+0.73 EUR
117+0.62 EUR
121+0.59 EUR
127+0.57 EUR
200+0.55 EUR
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NTD24N06LT4G ON-Semiconductor ntd24n06l-d.pdf e96d41a3aaa04fd2572f442ab880ba04.pdf N-MOSFET 24A 60V 1.36W NTD24N06L TNTD24N06L
Anzahl je Verpackung: 10 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.32 EUR
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NTD24N06LT4G NTD24N06LT4G onsemi ntd24n06l-d.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 6646 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.4 EUR
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500+1.31 EUR
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NTD24N06LT4G NTD24N06LT4G onsemi ntd24n06l-d.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 6500 Stücke:
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NTD24N06LT4G NTD24N06LT4G UMW e96d41a3aaa04fd2572f442ab880ba04.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
auf Bestellung 2438 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
21+0.86 EUR
100+0.55 EUR
500+0.42 EUR
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NTD24N06LT4G NTD24N06LT4G onsemi ntd24n06l-d.pdf e96d41a3aaa04fd2572f442ab880ba04.pdf MOSFETs 24A 60V POWER MOSFET
auf Bestellung 5404 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.54 EUR
10+1.99 EUR
100+1.39 EUR
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2.82 EUR
25+2.66 EUR
50+2.54 EUR
100+2.44 EUR
500+2.23 EUR
1000+2.16 EUR
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6EDL04N065PRXUMA1 Infineon_6EDL04x065xR_6EDL04N03PR_DataSheet_v02_00_EN.pdf
6EDL04N065PRXUMA1
Hersteller: Infineon Technologies
Gate Drivers LEVEL SHIFT DRIVER
auf Bestellung 2715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.87 EUR
10+2.73 EUR
25+2.45 EUR
100+2.36 EUR
500+2.16 EUR
1000+2.01 EUR
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.05 EUR
Mindestbestellmenge: 3000
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6EDL04N065PTXUMA1 Infineon_6EDL04x065xT_DataSheet_v02_00_EN.pdf
6EDL04N065PTXUMA1
Hersteller: Infineon Technologies
Gate Drivers LEVEL SHIFT DRIVER
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.05 EUR
10+3.01 EUR
25+2.76 EUR
100+2.46 EUR
250+2.32 EUR
500+2.24 EUR
1000+2.08 EUR
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6EDL04N065PTXUMA1 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PTXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N065PTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.01 EUR
Mindestbestellmenge: 1000
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6EDL04N065PTXUMA1 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PTXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N065PTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.78 EUR
25+2.54 EUR
100+2.27 EUR
250+2.14 EUR
500+2.09 EUR
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6EDL04N06PT Infineon_6EDL04X0XXX_DataSheet_v02_08_EN.pdf
6EDL04N06PT
Hersteller: Infineon Technologies
Gate Drivers 600V 3-Phase,0.375A BSD, OCP, EN & FAULT
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.46 EUR
10+3.71 EUR
25+3.41 EUR
100+2.97 EUR
250+2.8 EUR
500+2.45 EUR
1000+2.01 EUR
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6EDL04N06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N06PTXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.78 EUR
25+2.54 EUR
100+2.27 EUR
250+2.14 EUR
500+2.09 EUR
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6EDL04N06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N06PTXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.01 EUR
Mindestbestellmenge: 1000
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6EDL04N06PTXUMA1 Infineon_6EDL04X0XXX_DataSheet_v02_08_EN.pdf
6EDL04N06PTXUMA1
Hersteller: Infineon Technologies
Gate Drivers 600V 3-Phase,0.375A BSD, OCP, EN & FAULT
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.91 EUR
10+3.01 EUR
25+2.76 EUR
100+2.46 EUR
250+2.43 EUR
500+2.39 EUR
1000+2.32 EUR
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ACPL-074N-060E ACPL.pdf
ACPL-074N-060E
Hersteller: Broadcom Limited
Description: OPTOISO 3.75KV 2CH OPN DRAIN 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 6ns, 5ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Number of Channels: 2
Current - Output / Channel: 10 mA
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.08 EUR
10+6.02 EUR
100+4.8 EUR
500+4.27 EUR
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ACPL-074N-060E Broadcom_08-29-2025_ACPL.pdf
ACPL-074N-060E
Hersteller: Broadcom / Avago
High Speed Optocouplers Optocoupler (15MBd), LF+VDE+UL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.18 EUR
10+5.84 EUR
100+4.73 EUR
500+4.15 EUR
1000+3.98 EUR
2500+3.84 EUR
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BSC014N06NS Infineon_BSC014N06NS_DataSheet_v02_05_EN.pdf
BSC014N06NS
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS
auf Bestellung 6613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.2 EUR
10+4.7 EUR
100+3.68 EUR
500+3.13 EUR
5000+2.66 EUR
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BSC014N06NSATMA1 BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd
BSC014N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 7380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
10+4.64 EUR
100+3.28 EUR
500+2.81 EUR
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BSC014N06NSATMA1 Infineon_BSC014N06NS_DataSheet_v02_05_EN.pdf
BSC014N06NSATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS
auf Bestellung 4627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.2 EUR
10+4.7 EUR
100+3.41 EUR
500+2.87 EUR
2500+2.66 EUR
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BSC014N06NSATMA1 BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd
BSC014N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.3 EUR
Mindestbestellmenge: 5000
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BSC014N06NSTATMA1 Infineon_BSC014N06NST_DataSheet_v02_02_EN.pdf
BSC014N06NSTATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 4928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.99 EUR
10+4.56 EUR
100+3.57 EUR
500+2.97 EUR
1000+2.76 EUR
2500+2.59 EUR
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BSC014N06NSTATMA1 Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe
BSC014N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.24 EUR
Mindestbestellmenge: 5000
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BSC014N06NSTATMA1 Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe
BSC014N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
auf Bestellung 5220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.92 EUR
10+4.55 EUR
100+3.21 EUR
500+2.75 EUR
Mindestbestellmenge: 3
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BSC034N06NS Infineon_BSC034N06NS_DataSheet_v02_03_EN.pdf
BSC034N06NS
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.17 EUR
10+2.68 EUR
100+1.87 EUR
500+1.57 EUR
1000+1.47 EUR
5000+1.25 EUR
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BSC034N06NSATMA1 Infineon-BSC034N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c65286a70be
BSC034N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.59 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.32 EUR
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BSC034N06NSATMA1 Infineon_BSC034N06NS_DataSheet_v02_03_EN.pdf
BSC034N06NSATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 12647 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.07 EUR
10+2.43 EUR
100+1.76 EUR
500+1.44 EUR
1000+1.34 EUR
2500+1.31 EUR
5000+1.25 EUR
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BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.58 EUR
Mindestbestellmenge: 5000
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BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 8610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
2000+0.64 EUR
Mindestbestellmenge: 8
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BSC094N06LS5ATMA1 Infineon_BSC094N06LS5_DataSheet_v02_02_EN.pdf
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
MOSFETs DIFFERENTIATED MOSFETS
auf Bestellung 12736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.32 EUR
10+1.47 EUR
100+0.99 EUR
500+0.8 EUR
1000+0.67 EUR
5000+0.59 EUR
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DI114N06PQ di114n06pq.pdf
DI114N06PQ
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72.5A
Pulsed drain current: 480A
Power dissipation: 63.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
44+1.64 EUR
50+1.44 EUR
100+1.32 EUR
500+1.23 EUR
Mindestbestellmenge: 40
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IPB014N06N Infineon_IPB014N06N_DS_v02_02_en.pdf
IPB014N06N
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 180A D2PAK-6
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.48 EUR
10+4.89 EUR
100+3.84 EUR
500+3.33 EUR
1000+2.82 EUR
2000+2.76 EUR
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IPB014N06NATMA1 IPB014N06N-DTE.pdf
IPB014N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
18+4 EUR
22+3.27 EUR
24+3.02 EUR
Mindestbestellmenge: 15
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IPB014N06NATMA1 IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873
IPB014N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.6 EUR
2000+2.44 EUR
3000+2.39 EUR
Mindestbestellmenge: 1000
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IPB014N06NATMA1 IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873
IPB014N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 3654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
10+4.79 EUR
100+3.39 EUR
500+2.93 EUR
Mindestbestellmenge: 3
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IPB014N06NATMA1 Infineon_IPB014N06N_DS_v02_02_en.pdf
IPB014N06NATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 180A D2PAK-6
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.48 EUR
10+4.89 EUR
100+3.84 EUR
500+3.29 EUR
1000+2.78 EUR
2000+2.76 EUR
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IPB034N06N3G INFNS16279-1.pdf?t.download=true&u=5oefqw
IPB034N06N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.09 EUR
Mindestbestellmenge: 214
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IPD034N06N3 G Infineon_IPD034N06N3_DS_v02_00_en.pdf
IPD034N06N3 G
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 100A DPAK-2 OptiMOS 3
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.73 EUR
10+2.39 EUR
100+1.64 EUR
500+1.29 EUR
1000+1.18 EUR
2500+1.06 EUR
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IPD034N06N3GATMA1 IPD034N06N3G-DTE.pdf
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
36+1.99 EUR
41+1.76 EUR
55+1.32 EUR
100+1.3 EUR
Mindestbestellmenge: 29
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IPD034N06N3GATMA1 IPD034N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a97343b4cf3
IPD034N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 29629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 5
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IPD034N06N3GATMA1 IPD034N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a97343b4cf3
IPD034N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.03 EUR
5000+0.97 EUR
7500+0.93 EUR
12500+0.92 EUR
Mindestbestellmenge: 2500
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IPD14N06S280ATMA2 INFNS09524-1.pdf?t.download=true&u=5oefqw
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.49 EUR
Mindestbestellmenge: 2500
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IPD14N06S280ATMA2 Infineon_IPD14N06S2_80_DS_v01_00_en.pdf
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
auf Bestellung 2852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.35 EUR
10+1.08 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
2500+0.45 EUR
Mindestbestellmenge: 3
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IPD14N06S280ATMA2 INFNS09524-1.pdf?t.download=true&u=5oefqw
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
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IPI084N06L3GXKSA1 IPx084N06L3G.pdf
IPI084N06L3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
405+1.11 EUR
Mindestbestellmenge: 405
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IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a
IPP014N06NF2SAKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.58 EUR
19+3.89 EUR
25+2.97 EUR
27+2.69 EUR
50+2.39 EUR
Mindestbestellmenge: 16
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IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_03-EN.pdf
IPP014N06NF2SAKMA2
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.15 EUR
10+4.28 EUR
100+3.7 EUR
500+2.9 EUR
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IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a
IPP014N06NF2SAKMA2
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.5 EUR
50+3.87 EUR
100+3.52 EUR
500+2.91 EUR
Mindestbestellmenge: 3
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IPP024N06N3GXKSA1 IPP024N06N3G-DTE.pdf
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPP024N06N3GXKSA1 IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7
IPP024N06N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
90+5.01 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IPP084N06L3GXKSA1 IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2
IPP084N06L3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 30364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
259+1.74 EUR
Mindestbestellmenge: 259
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ISG0614N06NM5HATMA1 Infineon-ISG0614N06NM5H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d894fa3e04ab0
ISG0614N06NM5HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 31A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-VITFN-10-1
auf Bestellung 1402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.78 EUR
10+5.16 EUR
100+3.67 EUR
500+3.27 EUR
Mindestbestellmenge: 3
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ISG0614N06NM5HATMA1 Infineon_ISG0614N06NM5H_DataSheet_v02_00_EN.pdf
ISG0614N06NM5HATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 3509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.43 EUR
10+4.93 EUR
100+3.52 EUR
500+3.31 EUR
1000+3.29 EUR
3000+3.08 EUR
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ISG0614N06NM5HSCATMA1 Infineon-ISG0614N06NM5HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8950709b4b9d
ISG0614N06NM5HSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 31A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-WHITFN-10-1
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.36 EUR
10+5.57 EUR
100+3.98 EUR
500+3.6 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
ISG0614N06NM5HSCATMA1 Infineon_ISG0614N06NM5HSC_DataSheet_v02_00_EN.pdf
ISG0614N06NM5HSCATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.97 EUR
10+5.32 EUR
100+3.8 EUR
500+3.64 EUR
1000+3.59 EUR
3000+3.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISZ034N06LM5ATMA1 Infineon-ISZ034N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f6955876aa2
ISZ034N06LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 19A/112A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ISZ034N06LM5ATMA1 Infineon_ISZ034N06LM5_DataSheet_v02_00_EN.pdf
ISZ034N06LM5ATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 8035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.19 EUR
10+2.71 EUR
100+1.87 EUR
500+1.64 EUR
1000+1.48 EUR
5000+1.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
M85049/2924N06
M85049/2924N06
Hersteller: Amphenol Pcd
Circular MIL Spec Backshells BACKSHELL NON ENV ST NICKEL SZ 24
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+74.11 EUR
10+69.59 EUR
25+69.57 EUR
50+68.6 EUR
100+62.66 EUR
250+61.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTD24N06-1G ntd24n06-d.pdf
NTD24N06-1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 3148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1069+0.42 EUR
Mindestbestellmenge: 1069
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NTD24N06LT4G NTD24N06L_STD24N06L.PDF
NTD24N06LT4G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
77+0.93 EUR
99+0.73 EUR
117+0.62 EUR
121+0.59 EUR
127+0.57 EUR
200+0.55 EUR
Mindestbestellmenge: 72
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NTD24N06LT4G ntd24n06l-d.pdf e96d41a3aaa04fd2572f442ab880ba04.pdf
Hersteller: ON-Semiconductor
N-MOSFET 24A 60V 1.36W NTD24N06L TNTD24N06L
Anzahl je Verpackung: 10 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+1.32 EUR
Mindestbestellmenge: 30
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NTD24N06LT4G ntd24n06l-d.pdf
NTD24N06LT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 6646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.4 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NTD24N06LT4G ntd24n06l-d.pdf
NTD24N06LT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.02 EUR
5000+0.97 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NTD24N06LT4G e96d41a3aaa04fd2572f442ab880ba04.pdf
NTD24N06LT4G
Hersteller: UMW
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
auf Bestellung 2438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.86 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
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NTD24N06LT4G ntd24n06l-d.pdf e96d41a3aaa04fd2572f442ab880ba04.pdf
NTD24N06LT4G
Hersteller: onsemi
MOSFETs 24A 60V POWER MOSFET
auf Bestellung 5404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.54 EUR
10+1.99 EUR
100+1.39 EUR
500+1.15 EUR
1000+1.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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