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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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G7N60A4D Produktcode: 221710
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
erwartet: 5 St.
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SPW47N60C3 Produktcode: 43153
1
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Drain-Source-Spannung Uds, V: 650 V Drain-Strom Idd, A: 47 A Durchlasswiderstand Rds(on), Ohm: 0,07 Ohm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 6800/24 Montage: THT |
auf Bestellung: 94 St.
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SSS7N60B Produktcode: 32907
2
zu Favoriten hinzufügen
Lieblingsprodukt
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Fairchild |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Drain-Source-Spannung Uds, V: 600 V Drain-Strom Idd, A: 7 A Durchlasswiderstand Rds(on), Ohm: 1,2 Ohm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1380/38 Bemerkung: Isoliertes Gehäuse Montage: THT |
verfügbar: 6 St.
auf Bestellung: 98 St.
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| 7N60 | SMFSC°ЧЖ¬ |
auf Bestellung 175000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 7N60 AAT | TO-220/F 08+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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D2FC-F-7N(60M) | Aratas (Formerly Omron Components) |
Description: SWITCH SNP ACT SPST-NO 0.001A 6V Packaging: Bag Current Rating (Amps): 1mA (DC) Mounting Type: Through Hole Circuit: SPST-NO Switch Function: Off-Mom Operating Temperature: -25°C ~ 65°C Termination Style: PC Pin Actuator Type: Round (Pin Plunger) Operating Force: 60gf Ingress Protection: IP40 Mechanical Life: 60,000,000 Cycles Electrical Life: 60,000,000 Cycles Release Force: 24gf Differential Travel: 0.005" (0.13mm) Overtravel: 0.008" (0.2mm) Operating Position: 0.272" (6.9mm) Part Status: Active Voltage Rating - DC: 6 V |
auf Bestellung 1925 Stücke: Lieferzeit 10-14 Tag (e) |
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D2FC-F-7N(60M) | Omron Electronics |
Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch |
auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA47N60 | onsemi |
MOSFETs 650V SUPER FET |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 907 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60-F109 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60-F109 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60F | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 451 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60F | onsemi |
MOSFETs 47A, 600V SuperFET |
auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM | onsemi |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM | onsemi |
MOSFETs N-CH/600V/7A SuperFET |
auf Bestellung 10942 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM | onsemi |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM-WS | onsemi |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 1163 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM-WS | onsemi |
MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab |
auf Bestellung 681 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.27µC |
auf Bestellung 431 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60-F133 | onsemi |
MOSFETs 600V N-Channel MOSFET |
auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH47N60-F133 | onsemi |
Description: MOSFET N-CH 600V 47A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH47N60F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH47N60F-F133 | onsemi |
Description: MOSFET N-CH 600V 47A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 706 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH47N60F-F133 | onsemi |
MOSFETs 600V N-Channel MOSFET |
auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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FCI7N60 | onsemi |
MOSFETs HIGH POWER |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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FCI7N60 | onsemi |
Description: MOSFET N-CH 600V 7A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 2911 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP7N60 | onsemi |
MOSFETs 600V N-Channel SuperFET |
auf Bestellung 1986 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP7N60 | onsemi |
Description: MOSFET N-CH 600V 7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 10510 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP7N60 | ONS/FAI |
IGBT, N-ch, 7A, 600V, TO-220 Транзистори |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF17N60NT | onsemi |
MOSFETs UniFET2 600V |
auf Bestellung 378 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF17N60NT | onsemi |
Description: MOSFET N-CH 600V 17A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V |
auf Bestellung 1598 Stücke: Lieferzeit 10-14 Tag (e) |
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FDU7N60NZTU | Fairchild |
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu Anzahl je Verpackung: 10 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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FDU7N60NZTU | Fairchild |
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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FGPF7N60LSDTU | Fairchild Semiconductor |
Description: IGBT 600V 14A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-220F-3 Td (on/off) @ 25°C: 120ns/410ns Switching Energy: 270µJ (on), 3.8mJ (off) Test Condition: 300V, 7A, 470Ohm, 15V Gate Charge: 24 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 45 W |
auf Bestellung 4927 Stücke: Lieferzeit 10-14 Tag (e) |
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FGPF7N60RUFDTU | Fairchild Semiconductor |
Description: IGBT 600V 14A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A Supplier Device Package: TO-220F-3 Td (on/off) @ 25°C: 60ns/60ns Switching Energy: 230µJ (on), 100µJ (off) Test Condition: 300V, 7A, 30Ohm, 15V Gate Charge: 24 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 41 W |
auf Bestellung 1323 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTD7N60B3 | Harris Corporation |
Description: IGBT 600V 14A IPAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: IPAK Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTD7N60B3S | Harris Corporation |
Description: IGBT 600V 14A TO-252AA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 72µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 37 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTP7N60C3 | Harris Corporation |
Description: IGBT 600V 14A TO-220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-220AB Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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IXKR47N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 278W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Features of semiconductor devices: super junction coolmos |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKR47N60C5 |
Транзистори |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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L47N-600-1 | TE Connectivity Deutsch Connectors |
Description: LYD STEEL 3/64 X 6 NYLON COATING Packaging: Box For Use With/Related Products: Circular Connectors Material: Nylon Accessory Type: Cap (Cover), Protective Part Status: Active |
auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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L47N-600-1 | TE Connectivity / DEUTSCH |
Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING |
auf Bestellung 743 Stücke: Lieferzeit 10-14 Tag (e) |
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M83-LML3M7N60-0000-000 | Harwin |
Headers & Wire Housings Datamate J-Tek 3R 60P M HORZ PC TAIL 4MM W/JS |
auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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M83-LML3M7N60-0000-000 | Harwin Inc. |
Description: CONN HEADER R/A 60POS 2MM Features: Mating Flange, Mounting Flange, Mounting Hardware Packaging: Tube Connector Type: Header Voltage Rating: 800V Current Rating (Amps): 2.2A per Contact Mounting Type: Through Hole, Right Angle Number of Positions: 60 Number of Rows: 3 Style: Board to Board or Cable Operating Temperature: -55°C ~ 125°C Contact Type: Male Pin Fastening Type: Threaded Number of Positions Loaded: All Termination: Solder Material Flammability Rating: UL94 V-0 Contact Material: Phosphor Bronze Insulation Color: Black Pitch - Mating: 0.079" (2.00mm) Contact Finish - Mating: Gold Contact Finish Thickness - Mating: 29.5µin (0.75µm) Part Status: Active Contact Shape: Circular Contact Length - Post: 0.157" (4.00mm) Insulation Height: 0.303" (7.70mm) Shrouding: Shrouded - 4 Wall Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled Row Spacing - Mating: 0.079" (2.00mm) |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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MGP7N60E | onsemi |
Description: IGBT, 10A, 600V, N-CHANNEL Packaging: Bulk |
auf Bestellung 6760 Stücke: Lieferzeit 10-14 Tag (e) |
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MGP7N60ED | onsemi |
Description: IGBT, 10A, 600V, N-CHANNEL Packaging: Bulk |
auf Bestellung 5116 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL017N60S5H | onsemi |
Description: SF5 600V FAST 17MOHM WITH TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 16mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V |
auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL017N60S5H | onsemi |
MOSFETs SF5 600V FAST 17MOHM WITH |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD7N60E-GE3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs DPAK (TO-252) |
auf Bestellung 3172 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 43A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60AE-GE3 | Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 817 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60AEF-GE3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60AEF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60E-E3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 781 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 47A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V |
auf Bestellung 501 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.22µC |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG47N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 47A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V |
auf Bestellung 457 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60E-GE3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 1754 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N60EF-GE3 | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT SIHW |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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| G7N60A4D Produktcode: 221710
zu Favoriten hinzufügen
Lieblingsprodukt
|
Produkt ist nicht verfügbar
erwartet: 5 St.
- 5 St. - erwartet 13.08.2026
| SPW47N60C3 Produktcode: 43153
1
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 650 V
Drain-Strom Idd, A: 47 A
Durchlasswiderstand Rds(on), Ohm: 0,07 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 6800/24
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 650 V
Drain-Strom Idd, A: 47 A
Durchlasswiderstand Rds(on), Ohm: 0,07 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 6800/24
Montage: THT
auf Bestellung: 94 St.
- 94 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.71 EUR |
| 10+ | 10.77 EUR |
| SSS7N60B Produktcode: 32907
2
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,2 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1380/38
Bemerkung: Isoliertes Gehäuse
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,2 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1380/38
Bemerkung: Isoliertes Gehäuse
Montage: THT
verfügbar: 6 St.
- 6 St. - stock Köln
auf Bestellung: 98 St.
- 98 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.49 EUR |
| 10+ | 1.36 EUR |
| 7N60 |
Hersteller: SMFSC°ЧЖ¬
auf Bestellung 175000 Stücke:
Lieferzeit 21-28 Tag (e)
| 7N60 AAT |
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| D2FC-F-7N(60M) |
|
Hersteller: Aratas (Formerly Omron Components)
Description: SWITCH SNP ACT SPST-NO 0.001A 6V
Packaging: Bag
Current Rating (Amps): 1mA (DC)
Mounting Type: Through Hole
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -25°C ~ 65°C
Termination Style: PC Pin
Actuator Type: Round (Pin Plunger)
Operating Force: 60gf
Ingress Protection: IP40
Mechanical Life: 60,000,000 Cycles
Electrical Life: 60,000,000 Cycles
Release Force: 24gf
Differential Travel: 0.005" (0.13mm)
Overtravel: 0.008" (0.2mm)
Operating Position: 0.272" (6.9mm)
Part Status: Active
Voltage Rating - DC: 6 V
Description: SWITCH SNP ACT SPST-NO 0.001A 6V
Packaging: Bag
Current Rating (Amps): 1mA (DC)
Mounting Type: Through Hole
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -25°C ~ 65°C
Termination Style: PC Pin
Actuator Type: Round (Pin Plunger)
Operating Force: 60gf
Ingress Protection: IP40
Mechanical Life: 60,000,000 Cycles
Electrical Life: 60,000,000 Cycles
Release Force: 24gf
Differential Travel: 0.005" (0.13mm)
Overtravel: 0.008" (0.2mm)
Operating Position: 0.272" (6.9mm)
Part Status: Active
Voltage Rating - DC: 6 V
auf Bestellung 1925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 19+ | 1.13 EUR |
| 25+ | 1.05 EUR |
| 50+ | 0.99 EUR |
| 100+ | 0.94 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.77 EUR |
| D2FC-F-7N(60M) |
|
Hersteller: Omron Electronics
Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch
Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 1.09 EUR |
| 25+ | 1.04 EUR |
| 50+ | 0.93 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.81 EUR |
| FCA47N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.81 EUR |
| 10+ | 15.28 EUR |
| 30+ | 13.3 EUR |
| FCA47N60 |
|
Hersteller: onsemi
MOSFETs 650V SUPER FET
MOSFETs 650V SUPER FET
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.92 EUR |
| 10+ | 17.42 EUR |
| 120+ | 14.45 EUR |
| FCA47N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.05 EUR |
| 30+ | 15.27 EUR |
| 60+ | 14.1 EUR |
| 120+ | 13.2 EUR |
| FCA47N60-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.71 EUR |
| 30+ | 13.74 EUR |
| FCA47N60-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.73 EUR |
| 30+ | 14.4 EUR |
| FCA47N60F |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.43 EUR |
| 30+ | 15.51 EUR |
| 60+ | 14.33 EUR |
| 120+ | 13.45 EUR |
| FCA47N60F |
|
Hersteller: onsemi
MOSFETs 47A, 600V SuperFET
MOSFETs 47A, 600V SuperFET
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.79 EUR |
| 10+ | 15.73 EUR |
| 120+ | 15.12 EUR |
| FCD7N60TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.92 EUR |
| FCD7N60TM |
|
Hersteller: onsemi
MOSFETs N-CH/600V/7A SuperFET
MOSFETs N-CH/600V/7A SuperFET
auf Bestellung 10942 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.14 EUR |
| 10+ | 4 EUR |
| 100+ | 2.76 EUR |
| FCD7N60TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.47 EUR |
| 10+ | 4.21 EUR |
| 50+ | 3.24 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.38 EUR |
| FCD7N60TM-WS |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 1163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.24 EUR |
| 10+ | 4.06 EUR |
| 50+ | 3.12 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.28 EUR |
| FCD7N60TM-WS |
|
Hersteller: onsemi
MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab
MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.93 EUR |
| 10+ | 3.64 EUR |
| FCH47N60-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
auf Bestellung 431 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 16.02 EUR |
| 7+ | 13.46 EUR |
| FCH47N60-F133 |
|
Hersteller: onsemi
MOSFETs 600V N-Channel MOSFET
MOSFETs 600V N-Channel MOSFET
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.18 EUR |
| 10+ | 20.69 EUR |
| FCH47N60-F133 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.42 EUR |
| 30+ | 14.85 EUR |
| 60+ | 13.71 EUR |
| 120+ | 12.77 EUR |
| FCH47N60F-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.71 EUR |
| 10+ | 13.9 EUR |
| FCH47N60F-F133 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.2 EUR |
| 30+ | 16.03 EUR |
| 60+ | 14.82 EUR |
| 120+ | 13.98 EUR |
| FCH47N60F-F133 |
|
Hersteller: onsemi
MOSFETs 600V N-Channel MOSFET
MOSFETs 600V N-Channel MOSFET
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.79 EUR |
| 10+ | 22.68 EUR |
| FCI7N60 |
|
Hersteller: onsemi
MOSFETs HIGH POWER
MOSFETs HIGH POWER
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.14 EUR |
| 10+ | 4.69 EUR |
| 100+ | 3.28 EUR |
| 500+ | 2.93 EUR |
| FCI7N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2911 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.33 EUR |
| 10+ | 4.81 EUR |
| 50+ | 3.74 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.78 EUR |
| FCP7N60 |
|
Hersteller: onsemi
MOSFETs 600V N-Channel SuperFET
MOSFETs 600V N-Channel SuperFET
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 3.37 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.51 EUR |
| FCP7N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 10510 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.56 EUR |
| 10+ | 4.28 EUR |
| 50+ | 3.31 EUR |
| 100+ | 3 EUR |
| 500+ | 2.45 EUR |
| FCP7N60 |
|
Hersteller: ONS/FAI
IGBT, N-ch, 7A, 600V, TO-220 Транзистори
IGBT, N-ch, 7A, 600V, TO-220 Транзистори
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.63 EUR |
| FDPF17N60NT |
|
Hersteller: onsemi
MOSFETs UniFET2 600V
MOSFETs UniFET2 600V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.91 EUR |
| 10+ | 4.06 EUR |
| FDPF17N60NT |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.08 EUR |
| 10+ | 5.33 EUR |
| 50+ | 4.16 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.12 EUR |
| FDU7N60NZTU |
|
Hersteller: Fairchild
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.21 EUR |
| FDU7N60NZTU |
|
Hersteller: Fairchild
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.21 EUR |
| FGPF7N60LSDTU |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 120ns/410ns
Switching Energy: 270µJ (on), 3.8mJ (off)
Test Condition: 300V, 7A, 470Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 45 W
Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 120ns/410ns
Switching Energy: 270µJ (on), 3.8mJ (off)
Test Condition: 300V, 7A, 470Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 45 W
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 371+ | 1.49 EUR |
| FGPF7N60RUFDTU |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 60ns/60ns
Switching Energy: 230µJ (on), 100µJ (off)
Test Condition: 300V, 7A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 41 W
Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 60ns/60ns
Switching Energy: 230µJ (on), 100µJ (off)
Test Condition: 300V, 7A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 41 W
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 404+ | 1.36 EUR |
| HGTD7N60B3 |
|
Hersteller: Harris Corporation
Description: IGBT 600V 14A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 279+ | 1.96 EUR |
| HGTD7N60B3S |
|
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 72µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 72µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 271+ | 2.03 EUR |
| HGTP7N60C3 |
|
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220AB
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: IGBT 600V 14A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220AB
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 267+ | 2.05 EUR |
| IXKR47N60C5 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 31.73 EUR |
| IXKR47N60C5 |
|
Транзистори
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 78.25 EUR |
| L47N-600-1 |
|
Hersteller: TE Connectivity Deutsch Connectors
Description: LYD STEEL 3/64 X 6 NYLON COATING
Packaging: Box
For Use With/Related Products: Circular Connectors
Material: Nylon
Accessory Type: Cap (Cover), Protective
Part Status: Active
Description: LYD STEEL 3/64 X 6 NYLON COATING
Packaging: Box
For Use With/Related Products: Circular Connectors
Material: Nylon
Accessory Type: Cap (Cover), Protective
Part Status: Active
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.42 EUR |
| 10+ | 8.02 EUR |
| 25+ | 7.51 EUR |
| 50+ | 7.15 EUR |
| 100+ | 6.82 EUR |
| 250+ | 6.39 EUR |
| L47N-600-1 |
|
Hersteller: TE Connectivity / DEUTSCH
Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING
Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.98 EUR |
| M83-LML3M7N60-0000-000 |
|
Hersteller: Harwin
Headers & Wire Housings Datamate J-Tek 3R 60P M HORZ PC TAIL 4MM W/JS
Headers & Wire Housings Datamate J-Tek 3R 60P M HORZ PC TAIL 4MM W/JS
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 81.68 EUR |
| 8+ | 70.31 EUR |
| 24+ | 67.29 EUR |
| 56+ | 65.12 EUR |
| 104+ | 63.88 EUR |
| M83-LML3M7N60-0000-000 |
|
Hersteller: Harwin Inc.
Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Tube
Connector Type: Header
Voltage Rating: 800V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Part Status: Active
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Tube
Connector Type: Header
Voltage Rating: 800V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Part Status: Active
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 83.82 EUR |
| 16+ | 68.92 EUR |
| 104+ | 60.4 EUR |
| MGP7N60E |
|
auf Bestellung 6760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 413+ | 1.33 EUR |
| MGP7N60ED |
|
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 356+ | 1.54 EUR |
| NTHL017N60S5H |
|
Hersteller: onsemi
Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.62 EUR |
| 10+ | 21.73 EUR |
| 50+ | 17.95 EUR |
| 450+ | 17.1 EUR |
| NTHL017N60S5H |
|
Hersteller: onsemi
MOSFETs SF5 600V FAST 17MOHM WITH
MOSFETs SF5 600V FAST 17MOHM WITH
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.04 EUR |
| 10+ | 22.05 EUR |
| 100+ | 19.23 EUR |
| SIHD7N60E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 3172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.39 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.78 EUR |
| 3000+ | 1.73 EUR |
| 6000+ | 1.67 EUR |
| SIHG47N60AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
Description: MOSFET N-CH 600V 43A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.28 EUR |
| 25+ | 10.35 EUR |
| 50+ | 9.46 EUR |
| 100+ | 8.71 EUR |
| SIHG47N60AE-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.68 EUR |
| 10+ | 10.2 EUR |
| 100+ | 8.57 EUR |
| 1000+ | 8.51 EUR |
| SIHG47N60AEF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.39 EUR |
| 10+ | 11.21 EUR |
| 100+ | 9.53 EUR |
| SIHG47N60AEF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.87 EUR |
| 25+ | 11.39 EUR |
| 50+ | 10.42 EUR |
| 100+ | 9.62 EUR |
| SIHG47N60E-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.12 EUR |
| 10+ | 12.26 EUR |
| 100+ | 10.36 EUR |
| 500+ | 10.2 EUR |
| SIHG47N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.48 EUR |
| 25+ | 12.45 EUR |
| 50+ | 11.41 EUR |
| 100+ | 10.54 EUR |
| 500+ | 9.01 EUR |
| SIHG47N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.94 EUR |
| 10+ | 10.96 EUR |
| SIHG47N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.48 EUR |
| 10+ | 14.13 EUR |
| 50+ | 11.41 EUR |
| 100+ | 10.54 EUR |
| SIHG47N60E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.12 EUR |
| 10+ | 11.25 EUR |
| 500+ | 10.75 EUR |
| 1000+ | 10.52 EUR |
| SIHG47N60EF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SIHW
MOSFETs RECOMMENDED ALT SIHW
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.47 EUR |
| 10+ | 14.14 EUR |
| 100+ | 10.56 EUR |
| 500+ | 10.39 EUR |
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