Suchergebnisse für "2sb12" : > 60

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2SB1203
Produktcode: 152691
Transistoren > Bipolar-Transistoren PNP
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
2SB1203S 2SB1203S
Produktcode: 3632
Sanyo 2SB1203, 2SD1803.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: IPAK
fT: 180 MHz
U, V: 50
U, V: 60
I, А: 5
h21,max: 400
verfügbar: 82 Stück
1+0.29 EUR
10+ 0.23 EUR
2SB1237
Produktcode: 152671
2sb1132.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 150 MHz
U, V: 32 V
U, V: 40 V
I, А: 1 А
auf Bestellung 3 Stück:
Lieferzeit 21-28 Tag (e)
2SB1240
Produktcode: 152672
2sb1188.pdf Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 100 MHz
U, V: 32 V
U, V: 40 V
I, А: 2 А
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
2SB1242
Produktcode: 152673
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 100 MHz
U, V: 50 V
U, V: 50 V
I, А: 1 А
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
2SB1201S-E 2SB1201S-E onsemi en2112-d.pdf Description: TRANS PNP 50V 2A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
825+0.58 EUR
Mindestbestellmenge: 825
2SB1201S-TL-E 2SB1201S-TL-E onsemi en2112-d.html Description: TRANS PNP 50V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
Mindestbestellmenge: 14
2SB1201S-TL-E 2SB1201S-TL-E onsemi en2112-d.html Description: TRANS PNP 50V 2A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
700+0.63 EUR
1400+ 0.54 EUR
Mindestbestellmenge: 700
2SB1201S-TL-E 2SB1201S-TL-E onsemi EN2112_D-2311119.pdf Bipolar Transistors - BJT BIP PNP 2A 50V
auf Bestellung 15150 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.05 EUR
10+ 0.84 EUR
100+ 0.63 EUR
700+ 0.55 EUR
1400+ 0.47 EUR
2100+ 0.45 EUR
4900+ 0.44 EUR
Mindestbestellmenge: 3
2SB1201S-TL-E 2SB1201S-TL-E ONSEMI ONSMS36742-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1201S-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1201S-TL-E 2SB1201S-TL-E ON Semiconductor 2sb1201.pdf Trans GP BJT PNP 50V 2A 800mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.52 EUR
305+ 0.49 EUR
310+ 0.47 EUR
315+ 0.44 EUR
500+ 0.42 EUR
Mindestbestellmenge: 300
2SB1201S-TL-E 2SB1201S-TL-E ON Semiconductor 2sb1201.pdf Trans GP BJT PNP 50V 2A 800mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.53 EUR
300+ 0.5 EUR
305+ 0.48 EUR
310+ 0.45 EUR
315+ 0.43 EUR
500+ 0.4 EUR
Mindestbestellmenge: 295
2SB1201S-TL-E 2SB1201S-TL-E ONSEMI ONSMS36742-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1201S-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1201S-TL-E ONSEMI ONSMS36742-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1201S-TL-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1201T-TL-E 2SB1201T-TL-E onsemi Description: TRANS PNP 50V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 1141 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
21+ 0.88 EUR
100+ 0.61 EUR
Mindestbestellmenge: 18
2SB1201T-TL-E ONSEMI ONSMS36742-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1201T-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 15 W, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 18200 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202S-E 2SB1202S-E onsemi 2sb1202-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
20+ 0.89 EUR
Mindestbestellmenge: 18
2SB1202S-E 2SB1202S-E ONSEMI ONSM-S-A0013339296-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1202S-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 3 A, 15 W, TO-251 (IPAK), Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 35hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-251 (IPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 37468 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202S-E 2SB1202S-E ON Semiconductor 2sb1202-d.pdf Trans GP BJT PNP 50V 3A 1000mW 3-Pin(3+Tab) TP Bag
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202S-TL-E 2SB1202S-TL-E onsemi 2sb1202-d.pdf Description: TRANS PNP 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
Mindestbestellmenge: 14
2SB1202T-E 2SB1202T-E onsemi 2sb1202-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 21100 Stücke:
Lieferzeit 10-14 Tag (e)
1402+0.34 EUR
Mindestbestellmenge: 1402
2SB1202T-E ONSEMI ONSM-S-A0013339296-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1202T-E - 2SB1202T-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 21100 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202T-TL-E 2SB1202T-TL-E onsemi Description: TRANS PNP 50V 3A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
20+ 0.89 EUR
Mindestbestellmenge: 18
2SB1203S-E 2SB1203S-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 152549 Stücke:
Lieferzeit 10-14 Tag (e)
780+0.62 EUR
Mindestbestellmenge: 780
2SB1203S-FTT-TL-E 2SB1203S-FTT-TL-E onsemi ONSMS36741-1.pdf?t.download=true&u=5oefqw Description: BIP PNP 5A 50V
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 2-TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 13300 Stücke:
Lieferzeit 10-14 Tag (e)
833+0.58 EUR
Mindestbestellmenge: 833
2SB1203S-FTT-TL-E ONSEMI ONSMS36741-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1203S-FTT-TL-E - 2SB1203 - BIPOLAR PNP TRANSISTOR, 5A 50V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13300 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203S-H 2SB1203S-H onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
740+0.67 EUR
Mindestbestellmenge: 740
2SB1203S-H ONSEMI ONSM-S-A0012903225-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1203S-H - 2SB1203S-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203S-N-TL-E ONSEMI ONSMS36741-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1203S-N-TL-E - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203S-TL-E 2SB1203S-TL-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 17166 Stücke:
Lieferzeit 10-14 Tag (e)
733+0.67 EUR
Mindestbestellmenge: 733
2SB1203S-TL-E 2SB1203S-TL-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
2SB1203S-TL-H 2SB1203S-TL-H onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
740+0.67 EUR
Mindestbestellmenge: 740
2SB1203S-TL-H ONSEMI ONSM-S-A0012903225-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1203S-TL-H - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203T-TL-E 2SB1203T-TL-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 513196 Stücke:
Lieferzeit 10-14 Tag (e)
733+0.67 EUR
Mindestbestellmenge: 733
2SB1204S-E ONSEMI ONSMS36406-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1204S-E - 2SB1204S-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1204S-TL-E 2SB1204S-TL-E onsemi Description: TRANS PNP 50V 8A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
14+ 1.26 EUR
100+ 0.98 EUR
Mindestbestellmenge: 12
2SB1204S-TL-E ONSEMI ONSMS36406-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1204S-TL-E - TRANSISTOR, PNP, -50V, -8A, TO-252
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1204T-E 2SB1204T-E onsemi Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
693+0.7 EUR
Mindestbestellmenge: 693
2SB1204T-TL-E 2SB1204T-TL-E onsemi Description: TRANS PNP 50V 8A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
14+ 1.27 EUR
Mindestbestellmenge: 12
2SB1205S-E 2SB1205S-E onsemi en2114-d.pdf Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 31000 Stücke:
Lieferzeit 10-14 Tag (e)
878+0.55 EUR
Mindestbestellmenge: 878
2SB1205S-E 2SB1205S-E ONSEMI ONSMS36414-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1205S-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 31000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205S-TL-E 2SB1205S-TL-E onsemi en2114-d.pdf Description: TRANS PNP 20V 5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 659 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.2 EUR
100+ 0.83 EUR
Mindestbestellmenge: 13
2SB1205S-TL-E ONSEMI ONSMS36414-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1205S-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 20 V, 5 A, 10 W, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 60hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 5A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 10W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 20V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 320MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E 2SB1205T-E onsemi en2114-d.pdf Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 127000 Stücke:
Lieferzeit 10-14 Tag (e)
878+0.55 EUR
Mindestbestellmenge: 878
2SB1205T-E 2SB1205T-E ON Semiconductor en2114-d.pdf Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
626+0.25 EUR
627+ 0.24 EUR
Mindestbestellmenge: 626
2SB1205T-E ONSEMI ONSMS36414-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1205T-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 127000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E 2SB1205T-E ON Semiconductor en2114-d.pdf Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E 2SB1205T-E ON Semiconductor en2114-d.pdf Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E 2SB1205T-E ON Semiconductor en2114-d.pdf Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
623+0.25 EUR
626+ 0.24 EUR
627+ 0.23 EUR
Mindestbestellmenge: 623
2SB1205T-TL-E 2SB1205T-TL-E onsemi en2114-d.pdf Description: TRANS PNP 20V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 25200 Stücke:
Lieferzeit 10-14 Tag (e)
878+0.55 EUR
Mindestbestellmenge: 878
2SB1205T-TL-E 2SB1205T-TL-E ONSEMI ONSMS36414-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1205T-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 20 V, 5 A, 10 W, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 60hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 5A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 10W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 20V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 320MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 25200 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-TL-EX 2SB1205T-TL-EX onsemi ONSMS36414-1.pdf?t.download=true&u=5oefqw Description: BIP PNP 5A 20V
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: DPAK/TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
1158+0.42 EUR
Mindestbestellmenge: 1158
2SB1205T-TL-EX ONSEMI ONSMS36414-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1205T-TL-EX - 2SB1205 - BIPOLAR PNP TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1215S-E 2SB1215S-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1175 Stücke:
Lieferzeit 10-14 Tag (e)
684+0.71 EUR
Mindestbestellmenge: 684
2SB1215S-H 2SB1215S-H ONSEMI ONSMS37507-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1215S-H - 2SB1215S-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9498 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1215S-TL-E 2SB1215S-TL-E onsemi EN2539_D-2311183.pdf Bipolar Transistors - BJT BIP PNP 3A 100V
auf Bestellung 1108 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.47 EUR
10+ 1.2 EUR
100+ 0.94 EUR
700+ 0.79 EUR
1400+ 0.65 EUR
2100+ 0.63 EUR
Mindestbestellmenge: 2
2SB1215S-TL-E 2SB1215S-TL-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 170969 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
15+ 1.2 EUR
100+ 0.93 EUR
Mindestbestellmenge: 13
2SB1215S-TL-E 2SB1215S-TL-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 170800 Stücke:
Lieferzeit 10-14 Tag (e)
700+0.79 EUR
1400+ 0.64 EUR
2100+ 0.6 EUR
4900+ 0.58 EUR
17500+ 0.55 EUR
Mindestbestellmenge: 700
2SB1215S-TL-H 2SB1215S-TL-H onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.54 EUR
Mindestbestellmenge: 919
2SB1215S-TL-H ONSEMI ONSMS37507-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SB1215S-TL-H - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 11900 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203
Produktcode: 152691
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
2SB1203S
Produktcode: 3632
2SB1203, 2SD1803.pdf
2SB1203S
Hersteller: Sanyo
Transistoren > Bipolar-Transistoren PNP
Gehäuse: IPAK
fT: 180 MHz
U, V: 50
U, V: 60
I, А: 5
h21,max: 400
verfügbar: 82 Stück
Anzahl Preis ohne MwSt
1+0.29 EUR
10+ 0.23 EUR
2SB1237
Produktcode: 152671
2sb1132.pdf
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 150 MHz
U, V: 32 V
U, V: 40 V
I, А: 1 А
auf Bestellung 3 Stück:
Lieferzeit 21-28 Tag (e)
2SB1240
Produktcode: 152672
2sb1188.pdf
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 100 MHz
U, V: 32 V
U, V: 40 V
I, А: 2 А
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
2SB1242
Produktcode: 152673
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 100 MHz
U, V: 50 V
U, V: 50 V
I, А: 1 А
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
2SB1201S-E en2112-d.pdf
2SB1201S-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
825+0.58 EUR
Mindestbestellmenge: 825
2SB1201S-TL-E en2112-d.html
2SB1201S-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
Mindestbestellmenge: 14
2SB1201S-TL-E en2112-d.html
2SB1201S-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
700+0.63 EUR
1400+ 0.54 EUR
Mindestbestellmenge: 700
2SB1201S-TL-E EN2112_D-2311119.pdf
2SB1201S-TL-E
Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 2A 50V
auf Bestellung 15150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.84 EUR
100+ 0.63 EUR
700+ 0.55 EUR
1400+ 0.47 EUR
2100+ 0.45 EUR
4900+ 0.44 EUR
Mindestbestellmenge: 3
2SB1201S-TL-E ONSMS36742-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB1201S-TL-E
Hersteller: ONSEMI
Description: ONSEMI - 2SB1201S-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1201S-TL-E 2sb1201.pdf
2SB1201S-TL-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 50V 2A 800mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
300+0.52 EUR
305+ 0.49 EUR
310+ 0.47 EUR
315+ 0.44 EUR
500+ 0.42 EUR
Mindestbestellmenge: 300
2SB1201S-TL-E 2sb1201.pdf
2SB1201S-TL-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 50V 2A 800mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.53 EUR
300+ 0.5 EUR
305+ 0.48 EUR
310+ 0.45 EUR
315+ 0.43 EUR
500+ 0.4 EUR
Mindestbestellmenge: 295
2SB1201S-TL-E ONSMS36742-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB1201S-TL-E
Hersteller: ONSEMI
Description: ONSEMI - 2SB1201S-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1201S-TL-E ONSMS36742-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Description: ONSEMI - 2SB1201S-TL-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1201T-TL-E
2SB1201T-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 1141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.88 EUR
100+ 0.61 EUR
Mindestbestellmenge: 18
2SB1201T-TL-E ONSMS36742-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1201T-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 15 W, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 18200 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202S-E 2sb1202-d.pdf
2SB1202S-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
20+ 0.89 EUR
Mindestbestellmenge: 18
2SB1202S-E ONSM-S-A0013339296-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB1202S-E
Hersteller: ONSEMI
Description: ONSEMI - 2SB1202S-E - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 3 A, 15 W, TO-251 (IPAK), Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 35hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-251 (IPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 37468 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202S-E 2sb1202-d.pdf
2SB1202S-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 50V 3A 1000mW 3-Pin(3+Tab) TP Bag
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202S-TL-E 2sb1202-d.pdf
2SB1202S-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
Mindestbestellmenge: 14
2SB1202T-E 2sb1202-d.pdf
2SB1202T-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 21100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1402+0.34 EUR
Mindestbestellmenge: 1402
2SB1202T-E ONSM-S-A0013339296-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1202T-E - 2SB1202T-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 21100 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1202T-TL-E
2SB1202T-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
20+ 0.89 EUR
Mindestbestellmenge: 18
2SB1203S-E 2SB1203%2C2SD1803.pdf
2SB1203S-E
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 152549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
780+0.62 EUR
Mindestbestellmenge: 780
2SB1203S-FTT-TL-E ONSMS36741-1.pdf?t.download=true&u=5oefqw
2SB1203S-FTT-TL-E
Hersteller: onsemi
Description: BIP PNP 5A 50V
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 2-TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 13300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
833+0.58 EUR
Mindestbestellmenge: 833
2SB1203S-FTT-TL-E ONSMS36741-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Description: ONSEMI - 2SB1203S-FTT-TL-E - 2SB1203 - BIPOLAR PNP TRANSISTOR, 5A 50V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13300 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203S-H 2SB1203%2C2SD1803.pdf
2SB1203S-H
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
740+0.67 EUR
Mindestbestellmenge: 740
2SB1203S-H ONSM-S-A0012903225-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1203S-H - 2SB1203S-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203S-N-TL-E ONSMS36741-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Description: ONSEMI - 2SB1203S-N-TL-E - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203S-TL-E 2SB1203%2C2SD1803.pdf
2SB1203S-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 17166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
733+0.67 EUR
Mindestbestellmenge: 733
2SB1203S-TL-E 2SB1203%2C2SD1803.pdf
2SB1203S-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
2SB1203S-TL-H 2SB1203%2C2SD1803.pdf
2SB1203S-TL-H
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
740+0.67 EUR
Mindestbestellmenge: 740
2SB1203S-TL-H ONSM-S-A0012903225-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1203S-TL-H - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1203T-TL-E 2SB1203%2C2SD1803.pdf
2SB1203T-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 513196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
733+0.67 EUR
Mindestbestellmenge: 733
2SB1204S-E ONSMS36406-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1204S-E - 2SB1204S-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1204S-TL-E
2SB1204S-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.26 EUR
100+ 0.98 EUR
Mindestbestellmenge: 12
2SB1204S-TL-E ONSMS36406-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1204S-TL-E - TRANSISTOR, PNP, -50V, -8A, TO-252
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1204T-E
2SB1204T-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
693+0.7 EUR
Mindestbestellmenge: 693
2SB1204T-TL-E
2SB1204T-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.27 EUR
Mindestbestellmenge: 12
2SB1205S-E en2114-d.pdf
2SB1205S-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 31000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
878+0.55 EUR
Mindestbestellmenge: 878
2SB1205S-E ONSMS36414-1.pdf?t.download=true&u=5oefqw
2SB1205S-E
Hersteller: ONSEMI
Description: ONSEMI - 2SB1205S-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 31000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205S-TL-E en2114-d.pdf
2SB1205S-TL-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.2 EUR
100+ 0.83 EUR
Mindestbestellmenge: 13
2SB1205S-TL-E ONSMS36414-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1205S-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 20 V, 5 A, 10 W, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 60hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 5A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 10W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 20V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 320MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E en2114-d.pdf
2SB1205T-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 127000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
878+0.55 EUR
Mindestbestellmenge: 878
2SB1205T-E en2114-d.pdf
2SB1205T-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
626+0.25 EUR
627+ 0.24 EUR
Mindestbestellmenge: 626
2SB1205T-E ONSMS36414-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Description: ONSEMI - 2SB1205T-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 127000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E en2114-d.pdf
2SB1205T-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E en2114-d.pdf
2SB1205T-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-E en2114-d.pdf
2SB1205T-E
Hersteller: ON Semiconductor
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
623+0.25 EUR
626+ 0.24 EUR
627+ 0.23 EUR
Mindestbestellmenge: 623
2SB1205T-TL-E en2114-d.pdf
2SB1205T-TL-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 25200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
878+0.55 EUR
Mindestbestellmenge: 878
2SB1205T-TL-E ONSMS36414-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB1205T-TL-E
Hersteller: ONSEMI
Description: ONSEMI - 2SB1205T-TL-E - Bipolarer Einzeltransistor (BJT), PNP, 20 V, 5 A, 10 W, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 60hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 5A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 10W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 20V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 320MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 25200 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1205T-TL-EX ONSMS36414-1.pdf?t.download=true&u=5oefqw
2SB1205T-TL-EX
Hersteller: onsemi
Description: BIP PNP 5A 20V
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: DPAK/TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1158+0.42 EUR
Mindestbestellmenge: 1158
2SB1205T-TL-EX ONSMS36414-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Description: ONSEMI - 2SB1205T-TL-EX - 2SB1205 - BIPOLAR PNP TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1215S-E en2539-d.pdf
2SB1215S-E
Hersteller: onsemi
Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
684+0.71 EUR
Mindestbestellmenge: 684
2SB1215S-H ONSMS37507-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
2SB1215S-H
Hersteller: ONSEMI
Description: ONSEMI - 2SB1215S-H - 2SB1215S-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9498 Stücke:
Lieferzeit 14-21 Tag (e)
2SB1215S-TL-E EN2539_D-2311183.pdf
2SB1215S-TL-E
Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 3A 100V
auf Bestellung 1108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.47 EUR
10+ 1.2 EUR
100+ 0.94 EUR
700+ 0.79 EUR
1400+ 0.65 EUR
2100+ 0.63 EUR
Mindestbestellmenge: 2
2SB1215S-TL-E en2539-d.pdf
2SB1215S-TL-E
Hersteller: onsemi
Description: TRANS PNP 100V 3A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 170969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.46 EUR
15+ 1.2 EUR
100+ 0.93 EUR
Mindestbestellmenge: 13
2SB1215S-TL-E en2539-d.pdf
2SB1215S-TL-E
Hersteller: onsemi
Description: TRANS PNP 100V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 170800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
700+0.79 EUR
1400+ 0.64 EUR
2100+ 0.6 EUR
4900+ 0.58 EUR
17500+ 0.55 EUR
Mindestbestellmenge: 700
2SB1215S-TL-H en2539-d.pdf
2SB1215S-TL-H
Hersteller: onsemi
Description: TRANS PNP 100V 3A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
919+0.54 EUR
Mindestbestellmenge: 919
2SB1215S-TL-H ONSMS37507-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
Hersteller: ONSEMI
Description: ONSEMI - 2SB1215S-TL-H - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 11900 Stücke:
Lieferzeit 14-21 Tag (e)
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