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STB13N60M2 STB13N60M2 STMicroelectronics stb13n60m2.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 8076 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+2.82 EUR
100+1.95 EUR
500+1.61 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STB13N60M2 STB13N60M2 STMicroelectronics stb13n60m2.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.42 EUR
2000+1.31 EUR
Mindestbestellmenge: 1000
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STB13N60M2 STB13N60M2 STMicroelectronics stb13n60m2.pdf MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.26 EUR
10+2.83 EUR
100+1.95 EUR
500+1.62 EUR
1000+1.45 EUR
2000+1.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB33N60DM2 STB33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.27 EUR
10+5.39 EUR
100+3.84 EUR
500+3.71 EUR
1000+3.15 EUR
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STB33N60DM2 STB33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
10+5.37 EUR
100+3.84 EUR
500+3.69 EUR
Mindestbestellmenge: 3
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STB33N60DM6 STB33N60DM6 STMicroelectronics stb33n60dm6.pdf Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.61 EUR
10+6.45 EUR
100+4.67 EUR
Mindestbestellmenge: 2
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STB33N60M2 STB33N60M2 STMicroelectronics en.DM00095324.pdf MOSFETs N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
auf Bestellung 1112 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.36 EUR
10+4.88 EUR
100+3.63 EUR
500+3.33 EUR
1000+2.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB33N60M2 STB33N60M2 STMicroelectronics en.DM00095324.pdf Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.34 EUR
10+4.86 EUR
100+3.65 EUR
Mindestbestellmenge: 3
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STD13N60DM2 STD13N60DM2 STMicroelectronics en.DM00286120.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 4323 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+2.24 EUR
100+1.52 EUR
500+1.22 EUR
1000+1.18 EUR
Mindestbestellmenge: 6
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STD13N60DM2 STD13N60DM2 STMicroelectronics en.DM00286120.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.01 EUR
Mindestbestellmenge: 2500
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STD13N60DM2 STD13N60DM2 STMicroelectronics en.DM00286120.pdf MOSFETs N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
auf Bestellung 3359 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.38 EUR
10+2.25 EUR
100+1.53 EUR
500+1.22 EUR
1000+1.16 EUR
2500+1.02 EUR
5000+1.01 EUR
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STD13N60M2 STD13N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D754CAB1594745&compId=STB13N60M2.pdf?ci_sign=b9908146562bf6542a795ebdfd3f10dfd8902295 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
40+1.83 EUR
100+1.47 EUR
250+1.34 EUR
Mindestbestellmenge: 33
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STD13N60M2 STD13N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D754CAB1594745&compId=STB13N60M2.pdf?ci_sign=b9908146562bf6542a795ebdfd3f10dfd8902295 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1738 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.22 EUR
40+1.83 EUR
100+1.47 EUR
250+1.34 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 4439 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
12+1.55 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
Mindestbestellmenge: 8
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STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 3741 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.18 EUR
10+1.53 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.8 EUR
2500+0.68 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.68 EUR
Mindestbestellmenge: 2500
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STF13N60DM2 STF13N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7AB696000D2&compId=stf13n60dm2.pdf?ci_sign=ac63e93b2830b0e4bd3f197acd9bcd90db40c5f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
47+1.54 EUR
51+1.42 EUR
55+1.32 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
STF13N60DM2 STF13N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7AB696000D2&compId=stf13n60dm2.pdf?ci_sign=ac63e93b2830b0e4bd3f197acd9bcd90db40c5f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.25 EUR
47+1.54 EUR
51+1.42 EUR
55+1.32 EUR
100+1.29 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
STF13N60DM2 STF13N60DM2 STMicroelectronics en.DM00285795.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
50+1.92 EUR
100+1.83 EUR
Mindestbestellmenge: 6
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STF13N60DM2 STF13N60DM2 STMicroelectronics en.DM00285795.pdf MOSFETs N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.41 EUR
10+1.94 EUR
100+1.85 EUR
500+1.51 EUR
1000+1.37 EUR
2000+1.27 EUR
5000+1.22 EUR
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STF13N60M2 STF13N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7E4E15320D2&compId=stf13n60m2.pdf?ci_sign=aa533324886ad93fa1c8ec70c2876d70510fcc46 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
63+1.14 EUR
65+1.12 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
STF13N60M2 STF13N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7E4E15320D2&compId=stf13n60m2.pdf?ci_sign=aa533324886ad93fa1c8ec70c2876d70510fcc46 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.72 EUR
63+1.14 EUR
65+1.12 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
STF13N60M2 ST en.DM00070271.pdf Transistor N-Channel MOSFET; 600V; 25V; 380mOhm; 11A; 25W; -55°C ~ 150°C; STF13N60M2 TSTF13N60m2
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.27 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
STF13N60M2 ST en.DM00070271.pdf Transistor N-Channel MOSFET; 600V; 25V; 380mOhm; 11A; 25W; -55°C ~ 150°C; STF13N60M2 TSTF13N60m2
Anzahl je Verpackung: 10 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.27 EUR
Mindestbestellmenge: 20
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STF13N60M2 STF13N60M2 STMicroelectronics en.DM00070271.pdf MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1112 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.66 EUR
10+1.42 EUR
100+1.37 EUR
500+1.09 EUR
1000+0.99 EUR
2000+0.9 EUR
5000+0.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STF13N60M2 STF13N60M2 STMicroelectronics en.DM00070271.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 1268 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.75 EUR
50+1.42 EUR
100+1.38 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STF33N60DM2 STF33N60DM2 STMicroelectronics stf33n60dm2.pdf Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 3338 Stücke:
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100+2.99 EUR
500+2.72 EUR
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STF33N60DM2 STF33N60DM2 STMicroelectronics stf33n60dm2.pdf MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in a TO-220FP pack
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STF33N60DM6 STF33N60DM6 STMicroelectronics stf33n60dm6.pdf Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 440 Stücke:
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50+4 EUR
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STF33N60M2 STF33N60M2 STMicroelectronics en.DM00078147.pdf Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 702 Stücke:
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STF33N60M2 STF33N60M2 STMicroelectronics en.DM00078147.pdf MOSFETs N-CH 600V 0.108Ohm 26A MDmesh M2
auf Bestellung 468 Stücke:
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STF43N60DM2 STF43N60DM2 STMicroelectronics STF43N60DM2.pdf Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1089 Stücke:
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STF43N60DM2 STF43N60DM2 STMicroelectronics STF43N60DM2.pdf MOSFETs N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag
auf Bestellung 382 Stücke:
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STFH13N60M2 STFH13N60M2 STMicroelectronics MOSFETs N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
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STL13N60DM2 STL13N60DM2 STMicroelectronics en.DM00290959.pdf MOSFETs N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
auf Bestellung 251 Stücke:
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1+3.1 EUR
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100+1.78 EUR
500+1.54 EUR
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STL13N60DM2 STL13N60DM2 STMicroelectronics en.DM00290959.pdf Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 8974 Stücke:
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10+2.48 EUR
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STL13N60DM2 STL13N60DM2 STMicroelectronics en.DM00290959.pdf Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 6000 Stücke:
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3000+1.26 EUR
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STL13N60M6 STL13N60M6 STMicroelectronics stl13n60m6.pdf Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 100 V
auf Bestellung 2375 Stücke:
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500+1.4 EUR
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STL13N60M6 STL13N60M6 STMicroelectronics stl13n60m6.pdf MOSFETs N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
auf Bestellung 2800 Stücke:
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1+3.19 EUR
10+2.31 EUR
100+1.76 EUR
500+1.4 EUR
1000+1.29 EUR
3000+1.19 EUR
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STL33N60DM2 STL33N60DM2 STMicroelectronics en.DM00128601.pdf MOSFETs N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
auf Bestellung 2200 Stücke:
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1+7.57 EUR
10+5.79 EUR
100+4.17 EUR
500+4.08 EUR
1000+3.85 EUR
3000+3.45 EUR
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STL33N60DM2 STL33N60DM2 STMicroelectronics en.DM00128601.pdf Description: MOSFET N-CH 600V 21A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 1604 Stücke:
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3+7.97 EUR
10+5.78 EUR
100+4.15 EUR
500+4.06 EUR
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STL33N60M2 STL33N60M2 STMicroelectronics en.DM00078624.pdf MOSFETs N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
auf Bestellung 1627 Stücke:
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1+7.23 EUR
10+4.79 EUR
100+3.73 EUR
500+3.33 EUR
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3000+2.68 EUR
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STP13N60M2 STMicroelectronics en.DM00070267.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 150 Stücke:
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45+1.62 EUR
67+1.08 EUR
75+0.96 EUR
100+0.91 EUR
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STP13N60M2 STMicroelectronics en.DM00070267.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
67+1.08 EUR
75+0.96 EUR
100+0.91 EUR
250+0.84 EUR
500+0.81 EUR
1000+0.78 EUR
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STP13N60M2 STP13N60M2 STMicroelectronics en.DM00070267.pdf MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1538 Stücke:
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2+2.34 EUR
10+1.39 EUR
100+1.33 EUR
500+1.12 EUR
1000+0.98 EUR
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STP13N60M2 STP13N60M2 STMicroelectronics en.DM00070267.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 659 Stücke:
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8+2.41 EUR
50+1.39 EUR
100+1.35 EUR
500+1.19 EUR
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STP33N60DM2 STP33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
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18+4.08 EUR
27+2.72 EUR
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STP33N60DM2 STP33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.08 EUR
27+2.72 EUR
Mindestbestellmenge: 18
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STP33N60DM2 STP33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
auf Bestellung 1436 Stücke:
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1+4.63 EUR
10+3.22 EUR
100+3.12 EUR
500+2.87 EUR
1000+2.83 EUR
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STP33N60DM2 STP33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 2202 Stücke:
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3+5.97 EUR
50+3.47 EUR
100+3.37 EUR
500+2.92 EUR
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STP33N60DM6 STP33N60DM6 STMicroelectronics stp33n60dm6.pdf Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 826 Stücke:
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3+7.2 EUR
10+4.77 EUR
100+3.39 EUR
500+2.8 EUR
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STP33N60M2 STP33N60M2 STMicroelectronics en.DM00078147.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.82 EUR
25+2.87 EUR
50+2.59 EUR
Mindestbestellmenge: 15
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STP33N60M2 STP33N60M2 STMicroelectronics en.DM00078147.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.82 EUR
25+2.87 EUR
50+2.59 EUR
Mindestbestellmenge: 15
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STP33N60M2 STP33N60M2 STMicroelectronics en.DM00078147.pdf Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 590 Stücke:
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3+7.23 EUR
50+3.74 EUR
100+3.4 EUR
500+2.81 EUR
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STP33N60M2 STP33N60M2 STMicroelectronics en.DM00078147.pdf MOSFETs N-CH 600V 0.108Ohm typ. 26A MDmesh M2
auf Bestellung 813 Stücke:
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1+7.25 EUR
10+3.75 EUR
100+3.41 EUR
500+2.83 EUR
1000+2.73 EUR
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STP33N60M6 STP33N60M6 STMicroelectronics stp33n60m6.pdf MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
auf Bestellung 675 Stücke:
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1+7.06 EUR
10+5.26 EUR
100+3.8 EUR
500+3.12 EUR
1000+3.04 EUR
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STP33N60M6 STP33N60M6 STMicroelectronics stp33n60m6.pdf Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.27 EUR
10+5.24 EUR
100+3.79 EUR
500+3.11 EUR
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STP43N60DM2 STP43N60DM2 STMicroelectronics STP43N60DM2.pdf MOSFETs N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
auf Bestellung 1266 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.05 EUR
10+4.58 EUR
100+4.38 EUR
1000+3.92 EUR
2000+3.77 EUR
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STP43N60DM2 STP43N60DM2 STMicroelectronics STP43N60DM2.pdf Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 119 Stücke:
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2+9.03 EUR
50+4.55 EUR
100+4.35 EUR
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STU13N60M2 STU13N60M2 STMicroelectronics en.DM00070267.pdf MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 2570 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.2 EUR
10+1.28 EUR
100+1.17 EUR
500+1.1 EUR
1000+1.03 EUR
3000+0.89 EUR
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STB13N60M2 stb13n60m2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 8076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.82 EUR
100+1.95 EUR
500+1.61 EUR
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STB13N60M2 stb13n60m2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 7000 Stücke:
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Anzahl Preis
1000+1.42 EUR
2000+1.31 EUR
Mindestbestellmenge: 1000
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STB13N60M2 stb13n60m2.pdf
STB13N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.26 EUR
10+2.83 EUR
100+1.95 EUR
500+1.62 EUR
1000+1.45 EUR
2000+1.37 EUR
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STB33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STB33N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.27 EUR
10+5.39 EUR
100+3.84 EUR
500+3.71 EUR
1000+3.15 EUR
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STB33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STB33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
10+5.37 EUR
100+3.84 EUR
500+3.69 EUR
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STB33N60DM6 stb33n60dm6.pdf
STB33N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.61 EUR
10+6.45 EUR
100+4.67 EUR
Mindestbestellmenge: 2
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STB33N60M2 en.DM00095324.pdf
STB33N60M2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
auf Bestellung 1112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.36 EUR
10+4.88 EUR
100+3.63 EUR
500+3.33 EUR
1000+2.76 EUR
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STB33N60M2 en.DM00095324.pdf
STB33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
10+4.86 EUR
100+3.65 EUR
Mindestbestellmenge: 3
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STD13N60DM2 en.DM00286120.pdf
STD13N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 4323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.24 EUR
100+1.52 EUR
500+1.22 EUR
1000+1.18 EUR
Mindestbestellmenge: 6
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STD13N60DM2 en.DM00286120.pdf
STD13N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.01 EUR
Mindestbestellmenge: 2500
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STD13N60DM2 en.DM00286120.pdf
STD13N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
auf Bestellung 3359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.38 EUR
10+2.25 EUR
100+1.53 EUR
500+1.22 EUR
1000+1.16 EUR
2500+1.02 EUR
5000+1.01 EUR
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STD13N60M2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D754CAB1594745&compId=STB13N60M2.pdf?ci_sign=b9908146562bf6542a795ebdfd3f10dfd8902295
STD13N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
40+1.83 EUR
100+1.47 EUR
250+1.34 EUR
Mindestbestellmenge: 33
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STD13N60M2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D754CAB1594745&compId=STB13N60M2.pdf?ci_sign=b9908146562bf6542a795ebdfd3f10dfd8902295
STD13N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1738 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.22 EUR
40+1.83 EUR
100+1.47 EUR
250+1.34 EUR
Mindestbestellmenge: 33
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 4439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
12+1.55 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 3741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.53 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.8 EUR
2500+0.68 EUR
Mindestbestellmenge: 2
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
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STF13N60DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7AB696000D2&compId=stf13n60dm2.pdf?ci_sign=ac63e93b2830b0e4bd3f197acd9bcd90db40c5f1
STF13N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
47+1.54 EUR
51+1.42 EUR
55+1.32 EUR
Mindestbestellmenge: 32
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STF13N60DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7AB696000D2&compId=stf13n60dm2.pdf?ci_sign=ac63e93b2830b0e4bd3f197acd9bcd90db40c5f1
STF13N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.25 EUR
47+1.54 EUR
51+1.42 EUR
55+1.32 EUR
100+1.29 EUR
Mindestbestellmenge: 32
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STF13N60DM2 en.DM00285795.pdf
STF13N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
50+1.92 EUR
100+1.83 EUR
Mindestbestellmenge: 6
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STF13N60DM2 en.DM00285795.pdf
STF13N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.41 EUR
10+1.94 EUR
100+1.85 EUR
500+1.51 EUR
1000+1.37 EUR
2000+1.27 EUR
5000+1.22 EUR
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STF13N60M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7E4E15320D2&compId=stf13n60m2.pdf?ci_sign=aa533324886ad93fa1c8ec70c2876d70510fcc46
STF13N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
63+1.14 EUR
65+1.12 EUR
Mindestbestellmenge: 42
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STF13N60M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7E4E15320D2&compId=stf13n60m2.pdf?ci_sign=aa533324886ad93fa1c8ec70c2876d70510fcc46
STF13N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
42+1.72 EUR
63+1.14 EUR
65+1.12 EUR
Mindestbestellmenge: 42
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STF13N60M2 en.DM00070271.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 25V; 380mOhm; 11A; 25W; -55°C ~ 150°C; STF13N60M2 TSTF13N60m2
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.27 EUR
Mindestbestellmenge: 20
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STF13N60M2 en.DM00070271.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 25V; 380mOhm; 11A; 25W; -55°C ~ 150°C; STF13N60M2 TSTF13N60m2
Anzahl je Verpackung: 10 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.27 EUR
Mindestbestellmenge: 20
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STF13N60M2 en.DM00070271.pdf
STF13N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+1.42 EUR
100+1.37 EUR
500+1.09 EUR
1000+0.99 EUR
2000+0.9 EUR
5000+0.84 EUR
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STF13N60M2 en.DM00070271.pdf
STF13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 1268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
50+1.42 EUR
100+1.38 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 7
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STF33N60DM2 stf33n60dm2.pdf
STF33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
50+3.29 EUR
100+2.99 EUR
500+2.72 EUR
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STF33N60DM2 stf33n60dm2.pdf
STF33N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in a TO-220FP pack
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.35 EUR
10+3.29 EUR
100+3.01 EUR
500+2.75 EUR
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STF33N60DM6 stf33n60dm6.pdf
STF33N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
50+4 EUR
100+3.64 EUR
Mindestbestellmenge: 3
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STF33N60M2 en.DM00078147.pdf
STF33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
50+2.28 EUR
100+2.15 EUR
500+2.09 EUR
Mindestbestellmenge: 6
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STF33N60M2 en.DM00078147.pdf
STF33N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.108Ohm 26A MDmesh M2
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.55 EUR
10+2.29 EUR
500+2.18 EUR
1000+2.16 EUR
Mindestbestellmenge: 2
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STF43N60DM2 STF43N60DM2.pdf
STF43N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.46 EUR
50+4.31 EUR
100+3.63 EUR
500+3.51 EUR
Mindestbestellmenge: 3
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STF43N60DM2 STF43N60DM2.pdf
STF43N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.13 EUR
10+4.33 EUR
100+3.66 EUR
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STFH13N60M2
STFH13N60M2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.77 EUR
10+1.87 EUR
100+1.69 EUR
920+1.68 EUR
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STL13N60DM2 en.DM00290959.pdf
STL13N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.1 EUR
10+2.5 EUR
100+1.78 EUR
500+1.54 EUR
3000+1.31 EUR
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STL13N60DM2 en.DM00290959.pdf
STL13N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 8974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+2.48 EUR
100+1.77 EUR
500+1.54 EUR
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STL13N60DM2 en.DM00290959.pdf
STL13N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.26 EUR
Mindestbestellmenge: 3000
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STL13N60M6 stl13n60m6.pdf
STL13N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 100 V
auf Bestellung 2375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.34 EUR
100+1.74 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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STL13N60M6 stl13n60m6.pdf
STL13N60M6
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.19 EUR
10+2.31 EUR
100+1.76 EUR
500+1.4 EUR
1000+1.29 EUR
3000+1.19 EUR
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STL33N60DM2 en.DM00128601.pdf
STL33N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.57 EUR
10+5.79 EUR
100+4.17 EUR
500+4.08 EUR
1000+3.85 EUR
3000+3.45 EUR
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STL33N60DM2 en.DM00128601.pdf
STL33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.97 EUR
10+5.78 EUR
100+4.15 EUR
500+4.06 EUR
Mindestbestellmenge: 3
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STL33N60M2 en.DM00078624.pdf
STL33N60M2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
auf Bestellung 1627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.23 EUR
10+4.79 EUR
100+3.73 EUR
500+3.33 EUR
1000+2.85 EUR
3000+2.68 EUR
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STP13N60M2 en.DM00070267.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
67+1.08 EUR
75+0.96 EUR
100+0.91 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
STP13N60M2 en.DM00070267.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
45+1.62 EUR
67+1.08 EUR
75+0.96 EUR
100+0.91 EUR
250+0.84 EUR
500+0.81 EUR
1000+0.78 EUR
Mindestbestellmenge: 45
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STP13N60M2 en.DM00070267.pdf
STP13N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.34 EUR
10+1.39 EUR
100+1.33 EUR
500+1.12 EUR
1000+0.98 EUR
Mindestbestellmenge: 2
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STP13N60M2 en.DM00070267.pdf
STP13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
50+1.39 EUR
100+1.35 EUR
500+1.19 EUR
Mindestbestellmenge: 8
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STP33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STP33N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
27+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STP33N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.08 EUR
27+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STP33N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
auf Bestellung 1436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.63 EUR
10+3.22 EUR
100+3.12 EUR
500+2.87 EUR
1000+2.83 EUR
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STP33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STP33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
50+3.47 EUR
100+3.37 EUR
500+2.92 EUR
1000+2.72 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60DM6 stp33n60dm6.pdf
STP33N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.2 EUR
10+4.77 EUR
100+3.39 EUR
500+2.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60M2 en.DM00078147.pdf
STP33N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
25+2.87 EUR
50+2.59 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60M2 en.DM00078147.pdf
STP33N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.82 EUR
25+2.87 EUR
50+2.59 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60M2 en.DM00078147.pdf
STP33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
50+3.74 EUR
100+3.4 EUR
500+2.81 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60M2 en.DM00078147.pdf
STP33N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.108Ohm typ. 26A MDmesh M2
auf Bestellung 813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.25 EUR
10+3.75 EUR
100+3.41 EUR
500+2.83 EUR
1000+2.73 EUR
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STP33N60M6 stp33n60m6.pdf
STP33N60M6
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.06 EUR
10+5.26 EUR
100+3.8 EUR
500+3.12 EUR
1000+3.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STP33N60M6 stp33n60m6.pdf
STP33N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+5.24 EUR
100+3.79 EUR
500+3.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP43N60DM2 STP43N60DM2.pdf
STP43N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
auf Bestellung 1266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.05 EUR
10+4.58 EUR
100+4.38 EUR
1000+3.92 EUR
2000+3.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STP43N60DM2 STP43N60DM2.pdf
STP43N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.03 EUR
50+4.55 EUR
100+4.35 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STU13N60M2 en.DM00070267.pdf
STU13N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 2570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.2 EUR
10+1.28 EUR
100+1.17 EUR
500+1.1 EUR
1000+1.03 EUR
3000+0.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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