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MTP3N60E MTP3N60E
Produktcode: 23818 		Motorola Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 03.05.2015
Rds(on), Ohm: 02.02.2015
Ciss, pF/Qg, nC: 560/43
JHGF: THT
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)
1+0.7 EUR
SPP03N60C3HKSA1 SPP03N60C3HKSA1
Produktcode: 113411 		Infineon spp_a03n60c3_rev.pdf Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,4 Ohm
Ciss, pF/Qg, nC: 400/13
JHGF: THT
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
3N60 MOT CAN
auf Bestellung 387 Stücke:
Lieferzeit 21-28 Tag (e)
3N60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
3N60 AAT TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
AOD3N60 AOD3N60 ALPHA & OMEGA SEMICONDUCTOR AOD3N60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhanced
auf Bestellung 2429 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
139+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 120
AOD3N60 AOD3N60 ALPHA & OMEGA SEMICONDUCTOR AOD3N60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2429 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
139+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
2500+ 0.42 EUR
Mindestbestellmenge: 120
AOD3N60 ALPHA AOD3N60.pdf Transistor N-Channel MOSFET; 600V; 30V; 3,5Ohm; 2,5A; 56,8W; -50°C ~ 150°C; AOD3N60 TAOD3n60
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.19 EUR
Mindestbestellmenge: 25
CDE23N-60-B10K CDE23N-60-B10K SR PASSIVES cde-series.pdf Category: Slide potentiometers
Description: Potentiometer: slide; 10kΩ; 500mW; THT; ±20%; linear; Mat: metal
Mounting: THT
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±20%
Max. operating voltage: 500V
Body dimensions: 88x12.5x11mm
Body material: metal
Shaft dimensions: 4 x 1.2 x 15mm
Track material: carbon
Type of potentiometer: slide
Characteristics: linear
Track length: 60mm
Potentiometer features: mono
Anzahl je Verpackung: 1 Stücke
auf Bestellung 946 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
46+ 1.59 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 37
CDE23N-60-B50K CDE23N-60-B50K SR PASSIVES cde-series.pdf Category: Slide potentiometers
Description: Potentiometer: slide; 50kΩ; 500mW; THT; ±20%; linear; Mat: metal
Type of potentiometer: slide
Resistance: 50kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±20%
Characteristics: linear
Track material: carbon
Body dimensions: 88x12.5x11mm
Max. operating voltage: 500V
Track length: 60mm
Potentiometer features: mono
Body material: metal
Shaft dimensions: 4 x 1.2 x 15mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.87 EUR
46+ 1.59 EUR
68+ 1.06 EUR
72+ 1 EUR
100+ 0.99 EUR
Mindestbestellmenge: 39
FGD3N60LSDTM FGD3N60LSDTM onsemi / Fairchild FGD3N60LSD_D-2313464.pdf IGBT Transistors 600V IGBT HID Application
auf Bestellung 1775 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.11 EUR
10+ 1.72 EUR
100+ 1.32 EUR
500+ 1.11 EUR
1000+ 0.95 EUR
2500+ 0.82 EUR
Mindestbestellmenge: 2
FQPF3N60 FQPF3N60 Fairchild Semiconductor FAIRS05682-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.82 EUR
Mindestbestellmenge: 606
HGTD3N60A4S HGTD3N60A4S Fairchild Semiconductor FAIRS44514-1.pdf?t.download=true&u=5oefqw Description: IGBT, 17A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
auf Bestellung 2010 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.82 EUR
Mindestbestellmenge: 606
HGTD3N60B3 Harris Corporation HRISSB10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 7A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 66µJ (on), 88µJ (off)
Test Condition: 480V, 3.5A, 82Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 33.3 W
auf Bestellung 4349 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.84 EUR
Mindestbestellmenge: 592
HGTD3N60C3 HGTD3N60C3 Harris Corporation HRISS680-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 6A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 10 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: IPAK
Gate Charge: 13.8 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 4718 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.84 EUR
Mindestbestellmenge: 592
HGTD3N60C3S9A HGTD3N60C3S9A Fairchild Semiconductor FAIRS15436-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 85µJ (on), 245µJ (off)
Test Condition: 480V, 3A, 82Ohm, 15V
Gate Charge: 10.8 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 8284 Stücke:
Lieferzeit 10-14 Tag (e)
701+0.71 EUR
Mindestbestellmenge: 701
HGTP3N60C3 HGTP3N60C3 Harris Corporation FAIRS15436-1.pdf?t.download=true&u=5oefqw Description: 6A, 600V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-220AB
Gate Charge: 17.3 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 6793 Stücke:
Lieferzeit 10-14 Tag (e)
579+0.86 EUR
Mindestbestellmenge: 579
IKD03N60RFATMA1 IKD03N60RFATMA1 Infineon Technologies Infineon_IKD03N60RF_DS_v02_06_EN-1226864.pdf IGBT Transistors IGBT w/ INTG DIODE 600V 5A
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.51 EUR
10+ 1.24 EUR
100+ 0.97 EUR
500+ 0.82 EUR
1000+ 0.67 EUR
2500+ 0.64 EUR
5000+ 0.6 EUR
Mindestbestellmenge: 2
IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766 Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 2834 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
18+ 1.03 EUR
100+ 0.71 EUR
500+ 0.6 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon_IKN03N60RC2_DataSheet_v01_10_EN-3361944.pdf IGBT Transistors HOME APPLIANCES 14
auf Bestellung 6074 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.18 EUR
10+ 1.02 EUR
100+ 0.71 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
3000+ 0.46 EUR
6000+ 0.43 EUR
Mindestbestellmenge: 3
M83-LMT1M3N600000000 M83-LMT1M3N600000000 Harwin M83-LMT1M3NXX-0000-000-1064273.pdf Headers & Wire Housings
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+68.39 EUR
12+ 58.12 EUR
24+ 57.64 EUR
60+ 48.96 EUR
1008+ 48.95 EUR
M83-LMT2M3N60-0000-000 M83-LMT2M3N60-0000-000 Harwin M83-LMT2M3NXX-0000-000-1308168.pdf Headers & Wire Housings 3R 60P M VERT PC TAIL 4.5MM W/JS
auf Bestellung 36 Stücke:
Lieferzeit 98-102 Tag (e)
1+36.59 EUR
12+ 32.58 EUR
NDD03N60Z-1G NDD03N60Z-1G onsemi ndf03n60z-d.pdf Description: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 43072 Stücke:
Lieferzeit 10-14 Tag (e)
1480+0.33 EUR
Mindestbestellmenge: 1480
NDF03N60ZG NDF03N60ZG onsemi ndf03n60z-d.pdf Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
auf Bestellung 4522 Stücke:
Lieferzeit 10-14 Tag (e)
952+0.53 EUR
Mindestbestellmenge: 952
NDF03N60ZH NDF03N60ZH onsemi ndf03n60z-d.pdf Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
auf Bestellung 78600 Stücke:
Lieferzeit 10-14 Tag (e)
1110+0.44 EUR
Mindestbestellmenge: 1110
SGP13N60UFTU SGP13N60UFTU Fairchild Semiconductor FAIRS17573-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
auf Bestellung 2764 Stücke:
Lieferzeit 10-14 Tag (e)
1211+0.41 EUR
Mindestbestellmenge: 1211
SIHB053N60E-GE3 SIHB053N60E-GE3 Vishay Siliconix sihb053n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
auf Bestellung 1010 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.01 EUR
25+ 7.94 EUR
100+ 6.81 EUR
500+ 6.05 EUR
1000+ 5.18 EUR
Mindestbestellmenge: 2
SIHB053N60E-GE3 SIHB053N60E-GE3 Vishay sihb053n60e.pdf MOSFET N-CHANNEL 600V
auf Bestellung 640 Stücke:
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1+9.94 EUR
10+ 8.34 EUR
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100+ 6.76 EUR
250+ 6.39 EUR
500+ 6 EUR
1000+ 5.14 EUR
SIHB23N60E-GE3 SIHB23N60E-GE3 Vishay Semiconductors sihb23n60e.pdf MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 435 Stücke:
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1+6.32 EUR
10+ 6.05 EUR
25+ 5.02 EUR
100+ 4.29 EUR
500+ 3.82 EUR
1000+ 3.26 EUR
2000+ 3.19 EUR
SIHB33N60E-GE3 SIHB33N60E-GE3 Vishay / Siliconix sihb33n60e.pdf MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 2943 Stücke:
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1+9.72 EUR
10+ 8.17 EUR
25+ 7.71 EUR
100+ 6.58 EUR
250+ 6.34 EUR
500+ 5.84 EUR
1000+ 4.79 EUR
SIHB33N60E-GE3 SIHB33N60E-GE3 Vishay Siliconix sihb33n60e.pdf Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.79 EUR
10+ 8.22 EUR
100+ 6.65 EUR
500+ 5.91 EUR
1000+ 5.06 EUR
2000+ 4.77 EUR
Mindestbestellmenge: 2
SIHB33N60EF-GE3 SIHB33N60EF-GE3 Vishay Semiconductors sihb33n60ef.pdf MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 317 Stücke:
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1+10.23 EUR
10+ 8.76 EUR
25+ 8.25 EUR
100+ 7.29 EUR
250+ 7.23 EUR
500+ 6.67 EUR
1000+ 6.09 EUR
SIHB33N60EF-GE3 SIHB33N60EF-GE3 Vishay Siliconix sihb33n60ef.pdf Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 732 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.3 EUR
10+ 8.83 EUR
100+ 7.36 EUR
Mindestbestellmenge: 2
SIHB33N60ET1-GE3 SIHB33N60ET1-GE3 Vishay Semiconductors sihb33n60e.pdf MOSFET N-Channel 600V
auf Bestellung 839 Stücke:
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1+9.72 EUR
10+ 8.17 EUR
25+ 7.71 EUR
100+ 6.62 EUR
250+ 6.25 EUR
500+ 5.77 EUR
800+ 4.73 EUR
SIHB33N60ET5-GE3 SIHB33N60ET5-GE3 Vishay / Siliconix sihb33n60e.pdf MOSFET 600V Vds E Series D2PAK TO-263
auf Bestellung 794 Stücke:
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1+9.64 EUR
10+ 8.1 EUR
25+ 7.64 EUR
100+ 6.55 EUR
250+ 6.2 EUR
500+ 5.56 EUR
800+ 4.7 EUR
SiHG23N60E-GE3 SiHG23N60E-GE3 Vishay Semiconductors sihg23n60e.pdf MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 354 Stücke:
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1+7.36 EUR
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1000+ 3.57 EUR
SIHG33N60E-GE3 SIHG33N60E-GE3 Vishay Semiconductors sihg33n60e.pdf MOSFET 600V Vds 30V Vgs TO-247AC
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500+ 5.91 EUR
1000+ 5.1 EUR
SIHG33N60E-GE3 SIHG33N60E-GE3 Vishay sihg33n60e.pdf Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
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SIHG33N60EF-GE3 SIHG33N60EF-GE3 Vishay / Siliconix sihg33n60ef.pdf MOSFET 600V Vds 30V Vgs TO-247AC
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SIHG33N60EF-GE3 SIHG33N60EF-GE3 Vishay Siliconix sihg33n60ef.pdf Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 498 Stücke:
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Mindestbestellmenge: 2
SIHG73N60AE-GE3 SIHG73N60AE-GE3 Vishay Semiconductors sihg73n60ae.pdf MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 274 Stücke:
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1000+ 10.38 EUR
SIHG73N60E-GE3 VISHAY sihg73n60e.pdf SIHG73N60E-GE3 THT N channel transistors
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SIHG73N60E-GE3 SIHG73N60E-GE3 Vishay / Siliconix sihg73n60e.pdf MOSFET 600V Vds 30V Vgs TO-247AC
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SIHG73N60E-GE3 SIHG73N60E-GE3 Vishay Siliconix sihg73n60e.pdf Description: MOSFET N-CH 600V 73A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
auf Bestellung 305 Stücke:
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SIHP23N60E-BE3 SIHP23N60E-BE3 Vishay Siliconix sihp23n60e.pdf Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
auf Bestellung 994 Stücke:
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SIHP23N60E-BE3 SIHP23N60E-BE3 Vishay / Siliconix sihp23n60e.pdf MOSFET N-CHANNEL 600V
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SiHP23N60E-GE3 SiHP23N60E-GE3 Vishay / Siliconix sihp23n60e.pdf MOSFET 600V Vds 30V Vgs TO-220AB
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1000+ 2.62 EUR
SiHP23N60E-GE3 SiHP23N60E-GE3 Vishay Siliconix sihp23n60e.pdf Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
auf Bestellung 813 Stücke:
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SIHP33N60E-GE3 SIHP33N60E-GE3 Vishay / Siliconix sihp33n60e.pdf MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 569 Stücke:
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1+7.6 EUR
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SIHP33N60EF-GE3 SIHP33N60EF-GE3 Vishay Siliconix sihp33n60ef.pdf Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 1000 Stücke:
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SIHP33N60EF-GE3 SIHP33N60EF-GE3 Vishay / Siliconix sihp33n60ef.pdf MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 783 Stücke:
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50+ 6.79 EUR
SIHP33N60EF-GE3 SIHP33N60EF-GE3 Vishay sihp33n60ef.pdf Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
SIHW33N60E-GE3 SIHW33N60E-GE3 Vishay Semiconductors sihw33n60e.pdf MOSFET 600V Vds 30V Vgs TO-247AD
auf Bestellung 332 Stücke:
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100+ 7.13 EUR
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480+ 6.34 EUR
960+ 5.44 EUR
SIHW33N60E-GE3 SIHW33N60E-GE3 Vishay Siliconix sihw33n60e.pdf Description: MOSFET N-CH 600V 33A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.44 EUR
10+ 6.25 EUR
480+ 4.94 EUR
Mindestbestellmenge: 3
SPB03N60C3ATMA1 SPB03N60C3ATMA1 Infineon Technologies SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0 Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 12160 Stücke:
Lieferzeit 10-14 Tag (e)
630+0.79 EUR
Mindestbestellmenge: 630
SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies Infineon_SPD03N60C3_DataSheet_v02_07_EN-3363995.pdf MOSFET LOW POWER_LEGACY
auf Bestellung 2456 Stücke:
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2+2.48 EUR
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100+ 1.6 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
2500+ 0.98 EUR
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SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 15000 Stücke:
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2500+1.04 EUR
5000+ 0.99 EUR
12500+ 0.95 EUR
Mindestbestellmenge: 2500
SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 17360 Stücke:
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7+2.52 EUR
10+ 2.07 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies infineon-spd03n60c3-datasheet-v02_07-en.pdf Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
SPP03N60C3XKSA1 SPP03N60C3XKSA1 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 623918 Stücke:
Lieferzeit 10-14 Tag (e)
799+0.63 EUR
Mindestbestellmenge: 799
MTP3N60E
Produktcode: 23818
MTP3N60E
Hersteller: Motorola
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 03.05.2015
Rds(on), Ohm: 02.02.2015
Ciss, pF/Qg, nC: 560/43
JHGF: THT
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+0.7 EUR
SPP03N60C3HKSA1
Produktcode: 113411		 spp_a03n60c3_rev.pdf
SPP03N60C3HKSA1
Hersteller: Infineon
Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,4 Ohm
Ciss, pF/Qg, nC: 400/13
JHGF: THT
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
3N60
Hersteller: MOT
CAN
auf Bestellung 387 Stücke:
Lieferzeit 21-28 Tag (e)
3N60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
3N60 AAT
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
AOD3N60 AOD3N60.pdf
AOD3N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhanced
auf Bestellung 2429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
139+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 120
AOD3N60 AOD3N60.pdf
AOD3N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2429 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
139+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
2500+ 0.42 EUR
Mindestbestellmenge: 120
AOD3N60 AOD3N60.pdf
Hersteller: ALPHA
Transistor N-Channel MOSFET; 600V; 30V; 3,5Ohm; 2,5A; 56,8W; -50°C ~ 150°C; AOD3N60 TAOD3n60
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+1.19 EUR
Mindestbestellmenge: 25
CDE23N-60-B10K cde-series.pdf
CDE23N-60-B10K
Hersteller: SR PASSIVES
Category: Slide potentiometers
Description: Potentiometer: slide; 10kΩ; 500mW; THT; ±20%; linear; Mat: metal
Mounting: THT
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±20%
Max. operating voltage: 500V
Body dimensions: 88x12.5x11mm
Body material: metal
Shaft dimensions: 4 x 1.2 x 15mm
Track material: carbon
Type of potentiometer: slide
Characteristics: linear
Track length: 60mm
Potentiometer features: mono
Anzahl je Verpackung: 1 Stücke
auf Bestellung 946 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.94 EUR
46+ 1.59 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 37
CDE23N-60-B50K cde-series.pdf
CDE23N-60-B50K
Hersteller: SR PASSIVES
Category: Slide potentiometers
Description: Potentiometer: slide; 50kΩ; 500mW; THT; ±20%; linear; Mat: metal
Type of potentiometer: slide
Resistance: 50kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±20%
Characteristics: linear
Track material: carbon
Body dimensions: 88x12.5x11mm
Max. operating voltage: 500V
Track length: 60mm
Potentiometer features: mono
Body material: metal
Shaft dimensions: 4 x 1.2 x 15mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.87 EUR
46+ 1.59 EUR
68+ 1.06 EUR
72+ 1 EUR
100+ 0.99 EUR
Mindestbestellmenge: 39
FGD3N60LSDTM FGD3N60LSD_D-2313464.pdf
FGD3N60LSDTM
Hersteller: onsemi / Fairchild
IGBT Transistors 600V IGBT HID Application
auf Bestellung 1775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.11 EUR
10+ 1.72 EUR
100+ 1.32 EUR
500+ 1.11 EUR
1000+ 0.95 EUR
2500+ 0.82 EUR
Mindestbestellmenge: 2
FQPF3N60 FAIRS05682-1.pdf?t.download=true&u=5oefqw
FQPF3N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.82 EUR
Mindestbestellmenge: 606
HGTD3N60A4S FAIRS44514-1.pdf?t.download=true&u=5oefqw
HGTD3N60A4S
Hersteller: Fairchild Semiconductor
Description: IGBT, 17A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
auf Bestellung 2010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.82 EUR
Mindestbestellmenge: 606
HGTD3N60B3 HRISSB10-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 7A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 66µJ (on), 88µJ (off)
Test Condition: 480V, 3.5A, 82Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 33.3 W
auf Bestellung 4349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.84 EUR
Mindestbestellmenge: 592
HGTD3N60C3 HRISS680-1.pdf?t.download=true&u=5oefqw
HGTD3N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 6A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 10 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: IPAK
Gate Charge: 13.8 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 4718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.84 EUR
Mindestbestellmenge: 592
HGTD3N60C3S9A FAIRS15436-1.pdf?t.download=true&u=5oefqw
HGTD3N60C3S9A
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 85µJ (on), 245µJ (off)
Test Condition: 480V, 3A, 82Ohm, 15V
Gate Charge: 10.8 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 8284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
701+0.71 EUR
Mindestbestellmenge: 701
HGTP3N60C3 FAIRS15436-1.pdf?t.download=true&u=5oefqw
HGTP3N60C3
Hersteller: Harris Corporation
Description: 6A, 600V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-220AB
Gate Charge: 17.3 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 6793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
579+0.86 EUR
Mindestbestellmenge: 579
IKD03N60RFATMA1 Infineon_IKD03N60RF_DS_v02_06_EN-1226864.pdf
IKD03N60RFATMA1
Hersteller: Infineon Technologies
IGBT Transistors IGBT w/ INTG DIODE 600V 5A
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.51 EUR
10+ 1.24 EUR
100+ 0.97 EUR
500+ 0.82 EUR
1000+ 0.67 EUR
2500+ 0.64 EUR
5000+ 0.6 EUR
Mindestbestellmenge: 2
IKN03N60RC2ATMA1 Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 2834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
18+ 1.03 EUR
100+ 0.71 EUR
500+ 0.6 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
IKN03N60RC2ATMA1 Infineon_IKN03N60RC2_DataSheet_v01_10_EN-3361944.pdf
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 6074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.18 EUR
10+ 1.02 EUR
100+ 0.71 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
3000+ 0.46 EUR
6000+ 0.43 EUR
Mindestbestellmenge: 3
M83-LMT1M3N600000000 M83-LMT1M3NXX-0000-000-1064273.pdf
M83-LMT1M3N600000000
Hersteller: Harwin
Headers & Wire Housings
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+68.39 EUR
12+ 58.12 EUR
24+ 57.64 EUR
60+ 48.96 EUR
1008+ 48.95 EUR
M83-LMT2M3N60-0000-000 M83-LMT2M3NXX-0000-000-1308168.pdf
M83-LMT2M3N60-0000-000
Hersteller: Harwin
Headers & Wire Housings 3R 60P M VERT PC TAIL 4.5MM W/JS
auf Bestellung 36 Stücke:
Lieferzeit 98-102 Tag (e)
Anzahl Preis ohne MwSt
1+36.59 EUR
12+ 32.58 EUR
NDD03N60Z-1G ndf03n60z-d.pdf
NDD03N60Z-1G
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 43072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1480+0.33 EUR
Mindestbestellmenge: 1480
NDF03N60ZG ndf03n60z-d.pdf
NDF03N60ZG
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
auf Bestellung 4522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
952+0.53 EUR
Mindestbestellmenge: 952
NDF03N60ZH ndf03n60z-d.pdf
NDF03N60ZH
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
auf Bestellung 78600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1110+0.44 EUR
Mindestbestellmenge: 1110
SGP13N60UFTU FAIRS17573-1.pdf?t.download=true&u=5oefqw
SGP13N60UFTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
auf Bestellung 2764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1211+0.41 EUR
Mindestbestellmenge: 1211
SIHB053N60E-GE3 sihb053n60e.pdf
SIHB053N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
auf Bestellung 1010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.01 EUR
25+ 7.94 EUR
100+ 6.81 EUR
500+ 6.05 EUR
1000+ 5.18 EUR
Mindestbestellmenge: 2
SIHB053N60E-GE3 sihb053n60e.pdf
SIHB053N60E-GE3
Hersteller: Vishay
MOSFET N-CHANNEL 600V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.94 EUR
10+ 8.34 EUR
25+ 7.87 EUR
100+ 6.76 EUR
250+ 6.39 EUR
500+ 6 EUR
1000+ 5.14 EUR
SIHB23N60E-GE3 sihb23n60e.pdf
SIHB23N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.32 EUR
10+ 6.05 EUR
25+ 5.02 EUR
100+ 4.29 EUR
500+ 3.82 EUR
1000+ 3.26 EUR
2000+ 3.19 EUR
SIHB33N60E-GE3 sihb33n60e.pdf
SIHB33N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 2943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.72 EUR
10+ 8.17 EUR
25+ 7.71 EUR
100+ 6.58 EUR
250+ 6.34 EUR
500+ 5.84 EUR
1000+ 4.79 EUR
SIHB33N60E-GE3 sihb33n60e.pdf
SIHB33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.79 EUR
10+ 8.22 EUR
100+ 6.65 EUR
500+ 5.91 EUR
1000+ 5.06 EUR
2000+ 4.77 EUR
Mindestbestellmenge: 2
SIHB33N60EF-GE3 sihb33n60ef.pdf
SIHB33N60EF-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 317 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.23 EUR
10+ 8.76 EUR
25+ 8.25 EUR
100+ 7.29 EUR
250+ 7.23 EUR
500+ 6.67 EUR
1000+ 6.09 EUR
SIHB33N60EF-GE3 sihb33n60ef.pdf
SIHB33N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.3 EUR
10+ 8.83 EUR
100+ 7.36 EUR
Mindestbestellmenge: 2
SIHB33N60ET1-GE3 sihb33n60e.pdf
SIHB33N60ET1-GE3
Hersteller: Vishay Semiconductors
MOSFET N-Channel 600V
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.72 EUR
10+ 8.17 EUR
25+ 7.71 EUR
100+ 6.62 EUR
250+ 6.25 EUR
500+ 5.77 EUR
800+ 4.73 EUR
SIHB33N60ET5-GE3 sihb33n60e.pdf
SIHB33N60ET5-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds E Series D2PAK TO-263
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.64 EUR
10+ 8.1 EUR
25+ 7.64 EUR
100+ 6.55 EUR
250+ 6.2 EUR
500+ 5.56 EUR
800+ 4.7 EUR
SiHG23N60E-GE3 sihg23n60e.pdf
SiHG23N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.36 EUR
10+ 6.2 EUR
25+ 4.73 EUR
100+ 4.58 EUR
250+ 4.47 EUR
500+ 4.36 EUR
1000+ 3.57 EUR
SIHG33N60E-GE3 sihg33n60e.pdf
SIHG33N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.24 EUR
10+ 7.37 EUR
25+ 7.02 EUR
100+ 6.28 EUR
250+ 6.09 EUR
500+ 5.91 EUR
1000+ 5.1 EUR
SIHG33N60E-GE3 sihg33n60e.pdf
SIHG33N60E-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
SIHG33N60EF-GE3 sihg33n60ef.pdf
SIHG33N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.63 EUR
10+ 9.12 EUR
25+ 8.25 EUR
100+ 7.53 EUR
250+ 7.13 EUR
500+ 6.62 EUR
1000+ 5.74 EUR
SIHG33N60EF-GE3 sihg33n60ef.pdf
SIHG33N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.7 EUR
25+ 8.54 EUR
100+ 7.64 EUR
Mindestbestellmenge: 2
SIHG73N60AE-GE3 sihg73n60ae.pdf
SIHG73N60AE-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.09 EUR
10+ 16.67 EUR
25+ 14.22 EUR
100+ 13.18 EUR
500+ 11.39 EUR
1000+ 10.38 EUR
SIHG73N60E-GE3 sihg73n60e.pdf
Hersteller: VISHAY
SIHG73N60E-GE3 THT N channel transistors
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+19.59 EUR
6+ 12.08 EUR
Mindestbestellmenge: 4
SIHG73N60E-GE3 sihg73n60e.pdf
SIHG73N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.92 EUR
10+ 17.55 EUR
25+ 17.07 EUR
50+ 16.12 EUR
100+ 16.02 EUR
SIHG73N60E-GE3 sihg73n60e.pdf
SIHG73N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 73A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.05 EUR
25+ 16.24 EUR
100+ 15.29 EUR
SIHP23N60E-BE3 sihp23n60e.pdf
SIHP23N60E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.12 EUR
50+ 4.06 EUR
100+ 3.48 EUR
500+ 3.1 EUR
Mindestbestellmenge: 4
SIHP23N60E-BE3 sihp23n60e.pdf
SIHP23N60E-BE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 600V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.09 EUR
10+ 4.33 EUR
50+ 3.66 EUR
100+ 3.4 EUR
250+ 3.33 EUR
1000+ 3.17 EUR
SiHP23N60E-GE3 sihp23n60e.pdf
SiHP23N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.09 EUR
10+ 4.29 EUR
25+ 4.05 EUR
100+ 3.47 EUR
250+ 3.27 EUR
500+ 3.08 EUR
1000+ 2.62 EUR
SiHP23N60E-GE3 sihp23n60e.pdf
SiHP23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
auf Bestellung 813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.12 EUR
50+ 4.06 EUR
100+ 3.48 EUR
500+ 3.1 EUR
Mindestbestellmenge: 4
SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.6 EUR
10+ 7.06 EUR
50+ 6.25 EUR
100+ 5.9 EUR
SIHP33N60EF-GE3 sihp33n60ef.pdf
SIHP33N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.11 EUR
50+ 5.67 EUR
100+ 5.25 EUR
Mindestbestellmenge: 3
SIHP33N60EF-GE3 sihp33n60ef.pdf
SIHP33N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.06 EUR
50+ 6.79 EUR
SIHP33N60EF-GE3 sihp33n60ef.pdf
SIHP33N60EF-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
SIHW33N60E-GE3 sihw33n60e.pdf
SIHW33N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-247AD
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.51 EUR
10+ 8.82 EUR
25+ 8.32 EUR
100+ 7.13 EUR
250+ 6.74 EUR
480+ 6.34 EUR
960+ 5.44 EUR
SIHW33N60E-GE3 sihw33n60e.pdf
SIHW33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.44 EUR
10+ 6.25 EUR
480+ 4.94 EUR
Mindestbestellmenge: 3
SPB03N60C3ATMA1 SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0
SPB03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 12160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
630+0.79 EUR
Mindestbestellmenge: 630
SPD03N60C3ATMA1 Infineon_SPD03N60C3_DataSheet_v02_07_EN-3363995.pdf
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
MOSFET LOW POWER_LEGACY
auf Bestellung 2456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.48 EUR
10+ 2.04 EUR
100+ 1.6 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
2500+ 0.98 EUR
Mindestbestellmenge: 2
SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.04 EUR
5000+ 0.99 EUR
12500+ 0.95 EUR
Mindestbestellmenge: 2500
SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 17360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.07 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
SPD03N60C3ATMA1 infineon-spd03n60c3-datasheet-v02_07-en.pdf
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
SPP03N60C3XKSA1 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 623918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
799+0.63 EUR
Mindestbestellmenge: 799
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