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3N60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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3N60 AAT TO-220/F 08+
auf Bestellung 5000 Stücke:
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AOD3N60 AOD3N60 ALPHA & OMEGA SEMICONDUCTOR AOD3N60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhancement
auf Bestellung 2274 Stücke:
Lieferzeit 14-21 Tag (e)
130+0.65 EUR
150+0.57 EUR
163+0.52 EUR
500+0.49 EUR
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AOD3N60 AOD3N60 ALPHA info-taod3n60.pdf Transistor N-Channel MOSFET; 600V; 30V; 3,5Ohm; 2,5A; 56,8W; -50°C ~ 150°C; AOD3N60 TAOD3n60
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.32 EUR
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AOD3N60 AOD3N60 Alpha & Omega Semiconductor Inc. AOD3N60.pdf Description: MOSFET N-CH 600V 2.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
auf Bestellung 1025 Stücke:
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9+2.48 EUR
14+1.56 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
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FGD3N60LSDTM FGD3N60LSDTM onsemi fgd3n60lsd-d.pdf Description: IGBT 600V 6A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
auf Bestellung 2500 Stücke:
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FGD3N60LSDTM FGD3N60LSDTM onsemi fgd3n60lsd-d.pdf IGBTs 600V IGBT HID Application
auf Bestellung 1315 Stücke:
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FQPF3N60 FQPF3N60 Fairchild Semiconductor FAIRS05682-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2360 Stücke:
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413+1.34 EUR
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HGTD3N60A4S HGTD3N60A4S Fairchild Semiconductor FAIRS44514-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
auf Bestellung 2005 Stücke:
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HGTD3N60B3 Harris Corporation HRISSB10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 7A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 66µJ (on), 88µJ (off)
Test Condition: 480V, 3.5A, 82Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 33.3 W
auf Bestellung 4349 Stücke:
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HGTD3N60B3S9A Harris Corporation HRISSB10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 7A TO-252
Power - Max: 33.3 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Gate Charge: 21 nC
Switching Energy: 66µJ (on), 88µJ (off)
Td (on/off) @ 25°C: 18ns/105ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Reverse Recovery Time (trr): 16 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Test Condition: 480V, 3.5A, 82Ohm, 15V
auf Bestellung 2500 Stücke:
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395+1.39 EUR
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HGTD3N60C3 HGTD3N60C3 Harris Corporation HRISS680-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 6A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 10 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: IPAK
Gate Charge: 13.8 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
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HGTD3N60C3S9A HGTD3N60C3S9A Fairchild Semiconductor FAIRS15436-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 6A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 85µJ (on), 245µJ (off)
Test Condition: 480V, 3A, 82Ohm, 15V
Gate Charge: 10.8 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 8284 Stücke:
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HGTP3N60C3 HGTP3N60C3 Harris Corporation FAIRS15436-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 6A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-220AB
Gate Charge: 17.3 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 5993 Stücke:
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IKD03N60RFATMA1 IKD03N60RFATMA1 Infineon Technologies Infineon_IKD03N60RF_DS_v02_06_EN.pdf IGBTs IGBT w/ INTG DIODE 600V 5A
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IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon_IKN03N60RC2_DataSheet_v01_10_EN.pdf IGBTs HOME APPLIANCES
auf Bestellung 110 Stücke:
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2+2.03 EUR
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100+0.82 EUR
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IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766 Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 1530 Stücke:
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500+0.62 EUR
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M83-LMT1M3N600000000 M83-LMT1M3N600000000 Harwin M83_LMT1M3NXX_0000_000.pdf Power to the Board
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1+86.17 EUR
12+85.51 EUR
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M83-LMT2M3N60-0000-000 M83-LMT2M3N60-0000-000 Harwin M83_LMT2M3NXX_0000_000.pdf Headers & Wire Housings Datamate J-Tek 3R 60P M VERT PC TAIL 4.5MM W/JS
auf Bestellung 36 Stücke:
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12+41.89 EUR
24+39.27 EUR
60+37.39 EUR
108+36.51 EUR
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NDD03N60Z-1G NDD03N60Z-1G onsemi ndf03n60z-d.pdf Description: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 43072 Stücke:
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NDF03N60ZG NDF03N60ZG onsemi ndf03n60z-d.pdf Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
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NDF03N60ZH NDF03N60ZH onsemi ndf03n60z-d.pdf Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
auf Bestellung 78600 Stücke:
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SGP13N60UFTU SGP13N60UFTU Fairchild Semiconductor FAIRS17573-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 13A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
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SIHB053N60E-GE3 SIHB053N60E-GE3 Vishay sihb053n60e.pdf MOSFETs TO263 600V 47A N-CH MOSFET
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SIHB053N60E-GE3 SIHB053N60E-GE3 Vishay Siliconix sihb053n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
auf Bestellung 441 Stücke:
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SIHB23N60E-GE3 SIHB23N60E-GE3 Vishay Semiconductors sihb23n60e.pdf MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 1433 Stücke:
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100+5.01 EUR
500+4.19 EUR
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SIHB23N60E-GE3 SIHB23N60E-GE3 Vishay Siliconix sihb23n60e.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
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SIHB33N60E-GE3 SIHB33N60E-GE3 Vishay / Siliconix sihb33n60e.pdf MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 980 Stücke:
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SIHB33N60EF-GE3 SIHB33N60EF-GE3 Vishay Siliconix sihb33n60ef.pdf Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 966 Stücke:
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2+15.08 EUR
10+10.23 EUR
100+7.5 EUR
500+6.32 EUR
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SIHF23N60E-GE3 SIHF23N60E-GE3 Vishay / Siliconix sihf23n60e.pdf MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
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SiHG23N60E-GE3 SiHG23N60E-GE3 Vishay Semiconductors sihg23n60e.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHG33N60EF-GE3 SIHG33N60EF-GE3 Vishay Siliconix sihg33n60ef.pdf Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
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SIHG33N60EF-GE3 SIHG33N60EF-GE3 Vishay / Siliconix sihg33n60ef.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHG73N60AE-GE3 SIHG73N60AE-GE3 Vishay Siliconix sihg73n60ae.pdf Description: MOSFET N-CH 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
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SIHG73N60AE-GE3 SIHG73N60AE-GE3 Vishay Semiconductors sihg73n60ae.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHG73N60E-GE3 SIHG73N60E-GE3 VISHAY SIHG73N60E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 362nC
Kind of package: tube
Kind of channel: enhancement
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SIHG73N60E-GE3 SIHG73N60E-GE3 Vishay / Siliconix sihg73n60e.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHL023N60E-GE3 SIHL023N60E-GE3 Vishay Siliconix sihl023n60e.pdf Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10291 pF @ 100 V
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SIHL023N60E-GE3 SIHL023N60E-GE3 Vishay Semiconductors sihl023n60e.pdf MOSFETs N-CHANNEL 600V
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SIHP23N60E-BE3 SIHP23N60E-BE3 Vishay / Siliconix sihp23n60e.pdf MOSFETs TO220 600V 23A N-CH MOSFET
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SiHP23N60E-GE3 SiHP23N60E-GE3 Vishay Siliconix sihp23n60e.pdf Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
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SiHP23N60E-GE3 SiHP23N60E-GE3 Vishay / Siliconix sihp23n60e.pdf MOSFETs 600V Vds 30V Vgs TO-220AB
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SIHP33N60E-GE3 SIHP33N60E-GE3 Vishay / Siliconix sihp33n60e.pdf MOSFETs 600V Vds 30V Vgs TO-220AB
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SIHP33N60E-GE3 SIHP33N60E-GE3 Vishay Siliconix sihp33n60e.pdf Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
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SIHP33N60EF-GE3 SIHP33N60EF-GE3 Vishay / Siliconix sihp33n60ef.pdf MOSFETs 600V Vds 30V Vgs TO-220AB
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SIHW33N60E-GE3 SIHW33N60E-GE3 Vishay Semiconductors sihw33n60e.pdf MOSFETs 600V Vds 30V Vgs TO-247AD
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SPB03N60C3ATMA1 SPB03N60C3ATMA1 Infineon Technologies SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0 Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies Infineon_SPD03N60C3_DataSheet_v02_07_EN.pdf MOSFETs LOW POWER_LEGACY
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SPS03N60C3AKMA1 SPS03N60C3AKMA1 Infineon Technologies SPS03N60C3AKMA1.pdf Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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STB13N60M2 STB13N60M2 STMicroelectronics STB13N60M2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 963 Stücke:
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STB13N60M2 STB13N60M2 STMicroelectronics stb13n60m2.pdf MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
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STB13N60M2 STB13N60M2 STMicroelectronics stb13n60m2.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 6697 Stücke:
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STB13N60M2 STB13N60M2 STMicroelectronics stb13n60m2.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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STB33N60DM2 STB33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
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STB33N60DM2 STB33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 818 Stücke:
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10+7.31 EUR
100+5.24 EUR
500+4.76 EUR
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STB33N60DM6 STB33N60DM6 STMicroelectronics stb33n60dm6.pdf Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 244 Stücke:
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100+6.08 EUR
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3N60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
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3N60 AAT
TO-220/F 08+
auf Bestellung 5000 Stücke:
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AOD3N60 AOD3N60.pdf
AOD3N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.9nC
Kind of channel: enhancement
auf Bestellung 2274 Stücke:
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130+0.65 EUR
150+0.57 EUR
163+0.52 EUR
500+0.49 EUR
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AOD3N60 info-taod3n60.pdf
AOD3N60
Hersteller: ALPHA
Transistor N-Channel MOSFET; 600V; 30V; 3,5Ohm; 2,5A; 56,8W; -50°C ~ 150°C; AOD3N60 TAOD3n60
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
25+1.32 EUR
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AOD3N60 AOD3N60.pdf
AOD3N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 2.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
auf Bestellung 1025 Stücke:
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9+2.48 EUR
14+1.56 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
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FGD3N60LSDTM fgd3n60lsd-d.pdf
FGD3N60LSDTM
Hersteller: onsemi
Description: IGBT 600V 6A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
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2500+0.96 EUR
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FGD3N60LSDTM fgd3n60lsd-d.pdf
FGD3N60LSDTM
Hersteller: onsemi
IGBTs 600V IGBT HID Application
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1+4.06 EUR
10+1.54 EUR
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FQPF3N60 FAIRS05682-1.pdf?t.download=true&u=5oefqw
FQPF3N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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HGTD3N60A4S FAIRS44514-1.pdf?t.download=true&u=5oefqw
HGTD3N60A4S
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
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HGTD3N60B3 HRISSB10-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 7A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 66µJ (on), 88µJ (off)
Test Condition: 480V, 3.5A, 82Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 33.3 W
auf Bestellung 4349 Stücke:
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HGTD3N60B3S9A HRISSB10-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 7A TO-252
Power - Max: 33.3 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Gate Charge: 21 nC
Switching Energy: 66µJ (on), 88µJ (off)
Td (on/off) @ 25°C: 18ns/105ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Reverse Recovery Time (trr): 16 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Test Condition: 480V, 3.5A, 82Ohm, 15V
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HGTD3N60C3 HRISS680-1.pdf?t.download=true&u=5oefqw
HGTD3N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 6A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 10 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: IPAK
Gate Charge: 13.8 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
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HGTD3N60C3S9A FAIRS15436-1.pdf?t.download=true&u=5oefqw
HGTD3N60C3S9A
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 6A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-252 (DPAK)
Switching Energy: 85µJ (on), 245µJ (off)
Test Condition: 480V, 3A, 82Ohm, 15V
Gate Charge: 10.8 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 8284 Stücke:
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478+1.15 EUR
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HGTP3N60C3 FAIRS15436-1.pdf?t.download=true&u=5oefqw
HGTP3N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 6A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: TO-220AB
Gate Charge: 17.3 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 33 W
auf Bestellung 5993 Stücke:
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395+1.39 EUR
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IKD03N60RFATMA1 Infineon_IKD03N60RF_DS_v02_06_EN.pdf
IKD03N60RFATMA1
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 5A
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IKN03N60RC2ATMA1 Infineon_IKN03N60RC2_DataSheet_v01_10_EN.pdf
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES
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IKN03N60RC2ATMA1 Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 1530 Stücke:
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11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
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M83-LMT1M3N600000000 M83_LMT1M3NXX_0000_000.pdf
M83-LMT1M3N600000000
Hersteller: Harwin
Power to the Board
auf Bestellung 1 Stücke:
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12+85.51 EUR
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M83-LMT2M3N60-0000-000 M83_LMT2M3NXX_0000_000.pdf
M83-LMT2M3N60-0000-000
Hersteller: Harwin
Headers & Wire Housings Datamate J-Tek 3R 60P M VERT PC TAIL 4.5MM W/JS
auf Bestellung 36 Stücke:
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12+41.89 EUR
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NDD03N60Z-1G ndf03n60z-d.pdf
NDD03N60Z-1G
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 43072 Stücke:
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1010+0.55 EUR
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NDF03N60ZG ndf03n60z-d.pdf
NDF03N60ZG
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
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649+0.84 EUR
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NDF03N60ZH ndf03n60z-d.pdf
NDF03N60ZH
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.1A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
auf Bestellung 78600 Stücke:
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757+0.74 EUR
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SGP13N60UFTU FAIRS17573-1.pdf?t.download=true&u=5oefqw
SGP13N60UFTU
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 13A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
auf Bestellung 2764 Stücke:
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826+0.67 EUR
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SIHB053N60E-GE3 sihb053n60e.pdf
SIHB053N60E-GE3
Hersteller: Vishay
MOSFETs TO263 600V 47A N-CH MOSFET
auf Bestellung 866 Stücke:
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SIHB053N60E-GE3 sihb053n60e.pdf
SIHB053N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
auf Bestellung 441 Stücke:
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SIHB23N60E-GE3 sihb23n60e.pdf
SIHB23N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 1433 Stücke:
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1+10.25 EUR
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SIHB23N60E-GE3 sihb23n60e.pdf
SIHB23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
auf Bestellung 844 Stücke:
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3+9.56 EUR
50+4.95 EUR
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SIHB33N60E-GE3 sihb33n60e.pdf
SIHB33N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 980 Stücke:
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1+13.53 EUR
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SIHB33N60EF-GE3 sihb33n60ef.pdf
SIHB33N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 966 Stücke:
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2+15.08 EUR
10+10.23 EUR
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SIHB33N60EF-GE3 sihb33n60ef.pdf
SIHB33N60EF-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 566 Stücke:
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AnzahlPrivatkunde
1+14.8 EUR
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SIHB33N60ET1-GE3 sihb33n60e.pdf
SIHB33N60ET1-GE3
Hersteller: Vishay Semiconductors
MOSFETs N-Channel 600V
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SIHB33N60ET5-GE3 sihb33n60e.pdf
SIHB33N60ET5-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds E Series D2PAK TO-263
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SIHF23N60E-GE3 sihf23n60e.pdf
SIHF23N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
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SiHG23N60E-GE3 sihg23n60e.pdf
SiHG23N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHG33N60E-GE3 sihg33n60e.pdf
SIHG33N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHG33N60EF-GE3 sihg33n60ef.pdf
SIHG33N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 463 Stücke:
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SIHG33N60EF-GE3 sihg33n60ef.pdf
SIHG33N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 228 Stücke:
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SIHG73N60AE-GE3 sihg73n60ae.pdf
SIHG73N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
auf Bestellung 348 Stücke:
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SIHG73N60AE-GE3 sihg73n60ae.pdf
SIHG73N60AE-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 97 Stücke:
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SIHG73N60E-GE3 SIHG73N60E.pdf
SIHG73N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 362nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 376 Stücke:
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SIHG73N60E-GE3 sihg73n60e.pdf
SIHG73N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 219 Stücke:
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SIHL023N60E-GE3 sihl023n60e.pdf
SIHL023N60E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10291 pF @ 100 V
auf Bestellung 480 Stücke:
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SIHL023N60E-GE3 sihl023n60e.pdf
SIHL023N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 600V
auf Bestellung 1365 Stücke:
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SIHP23N60E-BE3 sihp23n60e.pdf
SIHP23N60E-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 23A N-CH MOSFET
auf Bestellung 40 Stücke:
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1+7.58 EUR
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SiHP23N60E-GE3 sihp23n60e.pdf
SiHP23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
auf Bestellung 703 Stücke:
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SiHP23N60E-GE3 sihp23n60e.pdf
SiHP23N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 8 Stücke:
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SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 287 Stücke:
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SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 600 Stücke:
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2+13.3 EUR
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SIHP33N60EF-GE3 sihp33n60ef.pdf
SIHP33N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 303 Stücke:
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SIHW33N60E-GE3 sihw33n60e.pdf
SIHW33N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AD
auf Bestellung 158 Stücke:
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1+15.57 EUR
10+10.95 EUR
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SPB03N60C3ATMA1 SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0
SPB03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 11750 Stücke:
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429+1.29 EUR
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SPD03N60C3ATMA1 Infineon_SPD03N60C3_DataSheet_v02_07_EN.pdf
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
auf Bestellung 1925 Stücke:
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1+3.89 EUR
10+2.43 EUR
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SPS03N60C3AKMA1 SPS03N60C3AKMA1.pdf
SPS03N60C3AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
454+1.21 EUR
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STB13N60M2 STB13N60M2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 963 Stücke:
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31+2.8 EUR
37+2.34 EUR
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STB13N60M2 stb13n60m2.pdf
STB13N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1143 Stücke:
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1+5.87 EUR
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STB13N60M2 stb13n60m2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 6697 Stücke:
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4+5.9 EUR
10+3.83 EUR
100+2.65 EUR
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STB13N60M2 stb13n60m2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 5000 Stücke:
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1000+1.99 EUR
2000+1.84 EUR
3000+1.77 EUR
5000+1.7 EUR
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STB33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STB33N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
auf Bestellung 857 Stücke:
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1+11.5 EUR
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STB33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STB33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 818 Stücke:
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2+10.94 EUR
10+7.31 EUR
100+5.24 EUR
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STB33N60DM6 stb33n60dm6.pdf
STB33N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.51 EUR
10+8.4 EUR
100+6.08 EUR
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