Suchergebnisse für "7N60" : > 180
Art der Ansicht :
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Mindestbestellmenge: 54
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STF7N60DM2 | STMicroelectronics |
 Description: MOSFET N-CH 600V 6A TO220FPPackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V |
auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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STF7N60DM2 | STMicroelectronics |
MOSFET N-channel 600 V, 0.78 Ohm typ 6 A MDmesh DM2 Power MOSFET |
auf Bestellung 1676 Stücke: Lieferzeit 10-14 Tag (e) |
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STF7N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 6A TO220FP Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STF7N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V |
auf Bestellung 1943 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL17N60M6 | STMicroelectronics |
Trans MOSFET N-CH 600V 10A 5-Pin Power Flat EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STL47N60M6 | STMicroelectronics |
MOSFET N-channel 600 V, 70 mOhm typ 31 A MDmesh M6 Power MOSFET |
auf Bestellung 2177 Stücke: Lieferzeit 10-14 Tag (e) |
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STO67N60DM6 | STMicroelectronics |
MOSFET N-channel 600 V, 48 mOhm typ., 58 A MDmesh DM6 Power MOSFET |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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STO67N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TOLL (HV) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
auf Bestellung 1770 Stücke: Lieferzeit 10-14 Tag (e) |
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STP7N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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STP7N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 83 Stücke: Lieferzeit 7-14 Tag (e) |
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STP7N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V |
auf Bestellung 941 Stücke: Lieferzeit 10-14 Tag (e) |
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STP7N60M2 | STMicroelectronics |
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 |
auf Bestellung 1478 Stücke: Lieferzeit 10-14 Tag (e) |
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STU7N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STU7N60M2 | STMicroelectronics |
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 |
auf Bestellung 2981 Stücke: Lieferzeit 10-14 Tag (e) |
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STW27N60M2-EP | STMicroelectronics |
MOSFET N-channel 600 V, 0.150 Ohm typ 20 A MDmesh M2 EP Power MOSFET |
auf Bestellung 516 Stücke: Lieferzeit 10-14 Tag (e) |
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STWA67N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 52A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247 Long Leads Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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STWA67N60M6 | STMicroelectronics |
Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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WML07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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WML07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 479 Stücke: Lieferzeit 7-14 Tag (e) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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WMO07N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 291 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 486 Stücke: Lieferzeit 7-14 Tag (e) |
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XR-B7N6-0404D | Quantic X-Microwave | Signal Conditioning Splitter, PDW07630 [PCB: 1154] |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| 07N60C2 | INFINEON | 09+ DIP-3 |
auf Bestellung 2040 Stücke: Lieferzeit 21-28 Tag (e) |
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| 07N60C3 | INFINEON | 09+ TO252-3 |
auf Bestellung 2157 Stücke: Lieferzeit 21-28 Tag (e) |
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| 07N60S5 | INFINEON | 09+ TO252-3 |
auf Bestellung 2153 Stücke: Lieferzeit 21-28 Tag (e) |
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| 24G62587N60 | SAGAMI | 03+ |
auf Bestellung 1888 Stücke: Lieferzeit 21-28 Tag (e) |
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| 47N60 | 2004 TO-3P |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 47N60CFD | Infineon |
auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
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| APT47N60SC3 |
auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) |
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| CEP7N60 |
auf Bestellung 1742 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCD7N60 | fairchild | to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCD7N60 | fairchild | 07+ to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCH47N60F-F133 | ON Semiconductor |
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auf Bestellung 905 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCH47N60F_F133 | fairchild | 2011+ |
auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCH47N60F_F133 | FCS | 10+ T0-247 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCH47N60N | ON Semiconductor |
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auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCH47N60NF | ON Semiconductor |
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auf Bestellung 8970 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCP7N60 | FSC |
07+ QFP-80 |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCPF7N60/FSC | FSC | 08+; |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N60 | fairchild | to-263/d2-pak |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N60 | FAIRCHILD | 07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N60 | FAIRCHILD | SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N60 | FAIRCHILD | TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N60TM | Fairchild |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQI7N60B |
auf Bestellung 5360 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQP7N60 | FAIRCHILD |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQP7N60C | FAIRCHILD | TO-220 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQP7N60C | FSC | 09+ |
auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQPF7N60 |
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auf Bestellung 17450 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQPF7N60C | FSC | 09+ SOP8 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| G7N60A4D | FAIRCHILD | 03+ |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| G7N60C3D | 07+ |
auf Bestellung 32 Stücke: Lieferzeit 21-28 Tag (e) |
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| HGT1S7N60A40S | FSC | 2002 TO-263 |
auf Bestellung 20740 Stücke: Lieferzeit 21-28 Tag (e) |
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| HGT1S7N60A4DS | FAIRCHILD |
07+ TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HGT1S7N60A4DS | FAIRCHILD |
TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HGT1S7N60A4S | FAIRCHILD | TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HGT1S7N60A4S | FAIRCHILD | 07+ TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| HGT1S7N60C3DS | FAIRCHILD |
07+ TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
| STF7N60DM2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6A TO220FP
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
Description: MOSFET N-CH 600V 6A TO220FP
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.3 EUR |
| STF7N60DM2 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 0.78 Ohm typ 6 A MDmesh DM2 Power MOSFET
MOSFET N-channel 600 V, 0.78 Ohm typ 6 A MDmesh DM2 Power MOSFET
auf Bestellung 1676 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.5 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.03 EUR |
| 2000+ | 0.99 EUR |
| 5000+ | 0.94 EUR |
| STF7N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6A TO220FP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
Description: MOSFET N-CH 600V 6A TO220FP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.06 EUR |
| STF7N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
Description: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
auf Bestellung 1943 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.95 EUR |
| 50+ | 1.57 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.86 EUR |
| STL17N60M6 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 10A 5-Pin Power Flat EP T/R
Trans MOSFET N-CH 600V 10A 5-Pin Power Flat EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| STL47N60M6 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 70 mOhm typ 31 A MDmesh M6 Power MOSFET
MOSFET N-channel 600 V, 70 mOhm typ 31 A MDmesh M6 Power MOSFET
auf Bestellung 2177 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.02 EUR |
| 25+ | 11.6 EUR |
| 100+ | 10.95 EUR |
| 250+ | 10.42 EUR |
| 500+ | 9.91 EUR |
| 3000+ | 6.35 EUR |
| STO67N60DM6 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 48 mOhm typ., 58 A MDmesh DM6 Power MOSFET
MOSFET N-channel 600 V, 48 mOhm typ., 58 A MDmesh DM6 Power MOSFET
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.53 EUR |
| 10+ | 10.75 EUR |
| 25+ | 10.19 EUR |
| 100+ | 8.96 EUR |
| 250+ | 8.66 EUR |
| 500+ | 7.9 EUR |
| 1000+ | 7.13 EUR |
| STO67N60M6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Description: MOSFET N-CH 600V 34A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 11.56 EUR |
| 10+ | 9.91 EUR |
| 100+ | 8.26 EUR |
| 500+ | 7.29 EUR |
| STP7N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 59+ | 1.22 EUR |
| 78+ | 0.92 EUR |
| 82+ | 0.87 EUR |
| STP7N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 59+ | 1.22 EUR |
| 78+ | 0.92 EUR |
| 82+ | 0.87 EUR |
| STP7N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.32 EUR |
| 50+ | 1.87 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.25 EUR |
| STP7N60M2 |
|
Hersteller: STMicroelectronics
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 0.96 EUR |
| 2000+ | 0.95 EUR |
| 5000+ | 0.91 EUR |
| STU7N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
Description: MOSFET N-CH 600V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.29 EUR |
| 75+ | 1.84 EUR |
| 150+ | 1.46 EUR |
| 525+ | 1.24 EUR |
| 1050+ | 1.01 EUR |
| 2025+ | 0.95 EUR |
| STU7N60M2 |
|
Hersteller: STMicroelectronics
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
auf Bestellung 2981 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.52 EUR |
| 10+ | 1.37 EUR |
| 100+ | 1.15 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.89 EUR |
| STW27N60M2-EP |
|
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 0.150 Ohm typ 20 A MDmesh M2 EP Power MOSFET
MOSFET N-channel 600 V, 0.150 Ohm typ 20 A MDmesh M2 EP Power MOSFET
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 4.36 EUR |
| 25+ | 4.12 EUR |
| 100+ | 3.54 EUR |
| 250+ | 3.17 EUR |
| 600+ | 2.69 EUR |
| 1200+ | 2.52 EUR |
| STWA67N60M6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 14.59 EUR |
| 10+ | 12.5 EUR |
| 100+ | 10.41 EUR |
| STWA67N60M6 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)| WML07N60C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.27 EUR |
| 106+ | 0.67 EUR |
| 122+ | 0.59 EUR |
| 141+ | 0.51 EUR |
| 149+ | 0.48 EUR |
| WML07N60C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 479 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.27 EUR |
| 106+ | 0.67 EUR |
| 122+ | 0.59 EUR |
| 141+ | 0.51 EUR |
| 149+ | 0.48 EUR |
| WML07N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 88+ | 0.82 EUR |
| 104+ | 0.69 EUR |
| 116+ | 0.62 EUR |
| 149+ | 0.48 EUR |
| 157+ | 0.46 EUR |
| WML07N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 88+ | 0.82 EUR |
| 104+ | 0.69 EUR |
| 116+ | 0.62 EUR |
| 149+ | 0.48 EUR |
| 157+ | 0.46 EUR |
| WMO07N60C2 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 291 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.2 EUR |
| 148+ | 0.48 EUR |
| 171+ | 0.42 EUR |
| 188+ | 0.38 EUR |
| 200+ | 0.36 EUR |
| WMP07N60C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 486 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 1.02 EUR |
| 148+ | 0.48 EUR |
| 171+ | 0.42 EUR |
| 193+ | 0.37 EUR |
| 209+ | 0.34 EUR |
| XR-B7N6-0404D |
Hersteller: Quantic X-Microwave
Signal Conditioning Splitter, PDW07630 [PCB: 1154]
Signal Conditioning Splitter, PDW07630 [PCB: 1154]
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 200.76 EUR |
| 10+ | 195.76 EUR |