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G7N60A4D
Produktcode: 221710
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
erwartet: 5 St.
  • 5 St. - erwartet 13.08.2026
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SPW47N60C3 SPW47N60C3
Produktcode: 43153
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Infineon Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 650 V
Drain-Strom Idd, A: 47 A
Durchlasswiderstand Rds(on), Ohm: 0,07 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 6800/24
Montage: THT
auf Bestellung: 94 St.
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SSS7N60B SSS7N60B
Produktcode: 32907
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Fairchild SSP7N60Buii.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,2 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1380/38
Bemerkung: Isoliertes Gehäuse
Montage: THT
verfügbar: 6 St.
  • 6 St. - stock Köln
auf Bestellung: 98 St.
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7N60 SMFSC°ЧЖ¬
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7N60 AAT TO-220/F 08+
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D2FC-F-7N(60M) D2FC-F-7N(60M) Aratas (Formerly Omron Components) D2FC_Datasheet_EN.pdf Description: SWITCH SNP ACT SPST-NO 0.001A 6V
Packaging: Bag
Current Rating (Amps): 1mA (DC)
Mounting Type: Through Hole
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -25°C ~ 65°C
Termination Style: PC Pin
Actuator Type: Round (Pin Plunger)
Operating Force: 60gf
Ingress Protection: IP40
Mechanical Life: 60,000,000 Cycles
Electrical Life: 60,000,000 Cycles
Release Force: 24gf
Differential Travel: 0.005" (0.13mm)
Overtravel: 0.008" (0.2mm)
Operating Position: 0.272" (6.9mm)
Part Status: Active
Voltage Rating - DC: 6 V
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D2FC-F-7N(60M) D2FC-F-7N(60M) Omron Electronics D2FC_Datasheet_EN.pdf Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch
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FCA47N60 FCA47N60 ONSEMI FCA47N60-F109-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
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FCA47N60 FCA47N60 onsemi FCA47N60-F109-D.PDF Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 907 Stücke:
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FCA47N60 FCA47N60 onsemi FCA47N60-F109-D.PDF MOSFETs 650V SUPER FET
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FCA47N60-F109 FCA47N60-F109 onsemi FCA47N60-F109-D.PDF Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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FCA47N60-F109 FCA47N60-F109 onsemi FCA47N60-F109-D.PDF Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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FCA47N60F FCA47N60F onsemi FCA47N60F-D.PDF MOSFETs 47A, 600V SuperFET
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FCA47N60F FCA47N60F onsemi FCA47N60F-D.PDF Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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FCD7N60TM FCD7N60TM onsemi FCD7N60-D.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2500 Stücke:
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FCD7N60TM FCD7N60TM onsemi FCD7N60-D.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2500 Stücke:
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FCD7N60TM FCD7N60TM onsemi FCD7N60-D.pdf MOSFETs N-CH/600V/7A SuperFET
auf Bestellung 10942 Stücke:
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FCD7N60TM-WS FCD7N60TM-WS onsemi FCD7N60-D.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 1163 Stücke:
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FCD7N60TM-WS FCD7N60TM-WS onsemi FCD7N60-D.pdf MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab
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FCH47N60-F133 FCH47N60-F133 ONSEMI FCH47N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
auf Bestellung 431 Stücke:
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FCH47N60-F133 FCH47N60-F133 onsemi FCH47N60-D.PDF MOSFETs 600V N-Channel MOSFET
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FCH47N60-F133 FCH47N60-F133 onsemi FCH47N60-D.PDF Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 300 Stücke:
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FCH47N60F-F133FCH47N60F-F133
FCH47N60F-F133FCH47N60F-F133
 FCH47N60F-F133 ONSEMI FCH47N60F-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
auf Bestellung 15 Stücke:
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FCH47N60F-F133 FCH47N60F-F133 onsemi FCH47N60F-D.PDF MOSFETs 600V N-Channel MOSFET
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FCH47N60F-F133 FCH47N60F-F133 onsemi FCH47N60F-D.PDF Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 706 Stücke:
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30+16.03 EUR
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FCI7N60 FCI7N60 onsemi FCI7N60-D.pdf Description: MOSFET N-CH 600V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2911 Stücke:
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10+4.81 EUR
50+3.74 EUR
100+3.39 EUR
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FCI7N60 FCI7N60 onsemi FCI7N60-D.pdf MOSFETs HIGH POWER
auf Bestellung 900 Stücke:
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FCP7N60 FCP7N60 onsemi FCPF7N60-D.pdf Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 10510 Stücke:
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100+3 EUR
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FCP7N60 FCP7N60 onsemi FCPF7N60-D.pdf MOSFETs 600V N-Channel SuperFET
auf Bestellung 1986 Stücke:
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FCP7N60 ONS/FAI FCP7N60-FCPF7N60.pdf IGBT, N-ch, 7A, 600V, TO-220 Транзистори
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FDPF17N60NT FDPF17N60NT onsemi fdpf17n60nt-d.pdf MOSFETs UniFET2 600V
auf Bestellung 378 Stücke:
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FDPF17N60NT FDPF17N60NT onsemi fdpf17n60nt-d.pdf Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.08 EUR
10+5.33 EUR
50+4.16 EUR
100+3.78 EUR
500+3.12 EUR
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FDU7N60NZTU FDU7N60NZTU Fairchild info-tfdu7n60nztu.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
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20+2.21 EUR
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FDU7N60NZTU FDU7N60NZTU Fairchild info-tfdu7n60nztu.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
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FGPF7N60LSDTU FGPF7N60LSDTU Fairchild Semiconductor FAIRS25183-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 120ns/410ns
Switching Energy: 270µJ (on), 3.8mJ (off)
Test Condition: 300V, 7A, 470Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 45 W
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FGPF7N60RUFDTU FGPF7N60RUFDTU Fairchild Semiconductor FAIRS24360-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 60ns/60ns
Switching Energy: 230µJ (on), 100µJ (off)
Test Condition: 300V, 7A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 41 W
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HGTD7N60B3 Harris Corporation HRISSA43-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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HGTD7N60B3S Harris Corporation HRISSA43-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 72µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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HGTP7N60C3 HGTP7N60C3 Harris Corporation HRISS471-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220AB
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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IXKR47N60C5 IXKR47N60C5 IXYS IXKR47N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
auf Bestellung 8 Stücke:
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3+31.73 EUR
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IXKR47N60C5 IXKR47N60C5 IXKR47N60C5.pdf Транзистори
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L47N-600-1 L47N-600-1 TE Connectivity / DEUTSCH DDEController?Action=srchrtrv&DocNm=1-1773962-8&DocType=Data%20Sheet&DocLang=English&DocFormat=pdf&PartCntxt=L47N-600-1 Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING
auf Bestellung 743 Stücke:
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1+15.98 EUR
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L47N-600-1 L47N-600-1 TE Connectivity Deutsch Connectors DDEController?Action=srchrtrv&DocNm=1-1773962-8&DocType=Data%20Sheet&DocLang=English&DocFormat=pdf&PartCntxt=L47N-600-1 Description: LYD STEEL 3/64 X 6 NYLON COATING
Packaging: Box
For Use With/Related Products: Circular Connectors
Material: Nylon
Accessory Type: Cap (Cover), Protective
Part Status: Active
auf Bestellung 357 Stücke:
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3+9.42 EUR
10+8.02 EUR
25+7.51 EUR
50+7.15 EUR
100+6.82 EUR
250+6.39 EUR
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M83-LML3M7N60-0000-000 M83-LML3M7N60-0000-000 Harwin M83_LML3M7NXX_0000_000.pdf Headers & Wire Housings Datamate J-Tek 3R 60P M HORZ PC TAIL 4MM W/JS
auf Bestellung 796 Stücke:
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8+70.31 EUR
24+67.29 EUR
56+65.12 EUR
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M83-LML3M7N60-0000-000 M83-LML3M7N60-0000-000 Harwin Inc. PD004-Product-Datasheet-Datamate-range-signal-connectors-HRi.pdf Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Tube
Connector Type: Header
Voltage Rating: 800V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Part Status: Active
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
auf Bestellung 197 Stücke:
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MGP7N60E MGP7N60E onsemi ONSM-S-A0005942327-1.pdf?t.download=true&u=5oefqw Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
auf Bestellung 6760 Stücke:
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MGP7N60ED MGP7N60ED onsemi ONSM-S-A0005942496-1.pdf?t.download=true&u=5oefqw Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
auf Bestellung 5116 Stücke:
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NTHL017N60S5H onsemi nthl017n60s5h-d.pdf MOSFETs SF5 600V FAST 17MOHM WITH
auf Bestellung 106 Stücke:
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10+22.05 EUR
100+19.23 EUR
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NTHL017N60S5H NTHL017N60S5H onsemi nthl017n60s5h-d.pdf Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
auf Bestellung 579 Stücke:
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1+30.62 EUR
10+21.73 EUR
50+17.95 EUR
450+17.1 EUR
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SIHD7N60E-GE3 SIHD7N60E-GE3 Vishay / Siliconix sihd7n60e.pdf MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 3172 Stücke:
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10+3.42 EUR
100+2.39 EUR
500+1.95 EUR
1000+1.78 EUR
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6000+1.67 EUR
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SIHG47N60AE-GE3 SIHG47N60AE-GE3 Vishay Semiconductors sihg47n60ae.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 817 Stücke:
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10+10.2 EUR
100+8.57 EUR
1000+8.51 EUR
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SIHG47N60AE-GE3 SIHG47N60AE-GE3 Vishay Siliconix sihg47n60ae.pdf Description: MOSFET N-CH 600V 43A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
auf Bestellung 405 Stücke:
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2+17.28 EUR
25+10.35 EUR
50+9.46 EUR
100+8.71 EUR
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SIHG47N60AEF-GE3 SIHG47N60AEF-GE3 Vishay Siliconix sihg47n60aef.pdf Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
auf Bestellung 216 Stücke:
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2+18.87 EUR
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SIHG47N60AEF-GE3 SIHG47N60AEF-GE3 Vishay / Siliconix sihg47n60aef.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 255 Stücke:
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SIHG47N60E-E3 SIHG47N60E-E3 Vishay Siliconix sihg47n60e.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 501 Stücke:
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SIHG47N60E-E3 SIHG47N60E-E3 Vishay / Siliconix sihg47n60e.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 781 Stücke:
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500+10.2 EUR
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SIHG47N60E-GE3 SIHG47N60E-GE3 VISHAY SIHG47N60E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
auf Bestellung 212 Stücke:
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SIHG47N60E-GE3 SIHG47N60E-GE3 Vishay Siliconix sihg47n60e.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 457 Stücke:
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2+20.48 EUR
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SIHG47N60E-GE3 SIHG47N60E-GE3 Vishay / Siliconix sihg47n60e.pdf MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 1754 Stücke:
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SIHG47N60EF-GE3 SIHG47N60EF-GE3 Vishay Siliconix sihg47n60ef.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
auf Bestellung 403 Stücke:
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G7N60A4D
Produktcode: 221710
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
erwartet: 5 St.
  • 5 St. - erwartet 13.08.2026
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SPW47N60C3
Produktcode: 43153
1 zu Favoriten hinzufügen Lieblingsprodukt
SPW47N60C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 650 V
Drain-Strom Idd, A: 47 A
Durchlasswiderstand Rds(on), Ohm: 0,07 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 6800/24
Montage: THT
auf Bestellung: 94 St.
  • 94 St. - Lieferzeit 21-28 Tag (e)
AnzahlPrivatkunde
1+11.71 EUR
10+10.77 EUR
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SSS7N60B
Produktcode: 32907
2 zu Favoriten hinzufügen Lieblingsprodukt
SSP7N60Buii.pdf
SSS7N60B
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,2 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1380/38
Bemerkung: Isoliertes Gehäuse
Montage: THT
verfügbar: 6 St.
  • 6 St. - stock Köln
auf Bestellung: 98 St.
  • 98 St. - Lieferzeit 21-28 Tag (e)
AnzahlPrivatkunde
1+1.49 EUR
10+1.36 EUR
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7N60
Hersteller: SMFSC°ЧЖ¬
auf Bestellung 175000 Stücke:
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7N60 AAT
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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D2FC-F-7N(60M) D2FC_Datasheet_EN.pdf
D2FC-F-7N(60M)
Hersteller: Aratas (Formerly Omron Components)
Description: SWITCH SNP ACT SPST-NO 0.001A 6V
Packaging: Bag
Current Rating (Amps): 1mA (DC)
Mounting Type: Through Hole
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -25°C ~ 65°C
Termination Style: PC Pin
Actuator Type: Round (Pin Plunger)
Operating Force: 60gf
Ingress Protection: IP40
Mechanical Life: 60,000,000 Cycles
Electrical Life: 60,000,000 Cycles
Release Force: 24gf
Differential Travel: 0.005" (0.13mm)
Overtravel: 0.008" (0.2mm)
Operating Position: 0.272" (6.9mm)
Part Status: Active
Voltage Rating - DC: 6 V
auf Bestellung 1925 Stücke:
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16+1.38 EUR
19+1.13 EUR
25+1.05 EUR
50+0.99 EUR
100+0.94 EUR
250+0.87 EUR
500+0.82 EUR
1000+0.77 EUR
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D2FC-F-7N(60M) D2FC_Datasheet_EN.pdf
D2FC-F-7N(60M)
Hersteller: Omron Electronics
Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch
auf Bestellung 1445 Stücke:
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AnzahlPrivatkunde
3+1.29 EUR
10+1.09 EUR
25+1.04 EUR
50+0.93 EUR
100+0.88 EUR
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FCA47N60 FCA47N60-F109-D.PDF
FCA47N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.81 EUR
10+15.28 EUR
30+13.3 EUR
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FCA47N60 FCA47N60-F109-D.PDF
FCA47N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 907 Stücke:
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1+25.05 EUR
30+15.27 EUR
60+14.1 EUR
120+13.2 EUR
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FCA47N60 FCA47N60-F109-D.PDF
FCA47N60
Hersteller: onsemi
MOSFETs 650V SUPER FET
auf Bestellung 90 Stücke:
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1+23.92 EUR
10+17.42 EUR
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FCA47N60-F109 FCA47N60-F109-D.PDF
FCA47N60-F109
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 190 Stücke:
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30+13.74 EUR
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FCA47N60-F109 FCA47N60-F109-D.PDF
FCA47N60-F109
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 38 Stücke:
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AnzahlPrivatkunde
1+23.73 EUR
30+14.4 EUR
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FCA47N60F FCA47N60F-D.PDF
FCA47N60F
Hersteller: onsemi
MOSFETs 47A, 600V SuperFET
auf Bestellung 314 Stücke:
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1+25.79 EUR
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FCA47N60F FCA47N60F-D.PDF
FCA47N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 451 Stücke:
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1+25.43 EUR
30+15.51 EUR
60+14.33 EUR
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FCD7N60TM FCD7N60-D.pdf
FCD7N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.47 EUR
10+4.21 EUR
50+3.24 EUR
100+2.93 EUR
500+2.38 EUR
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FCD7N60TM FCD7N60-D.pdf
FCD7N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.92 EUR
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FCD7N60TM FCD7N60-D.pdf
FCD7N60TM
Hersteller: onsemi
MOSFETs N-CH/600V/7A SuperFET
auf Bestellung 10942 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.14 EUR
10+4 EUR
100+2.76 EUR
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FCD7N60TM-WS FCD7N60-D.pdf
FCD7N60TM-WS
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 1163 Stücke:
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4+6.24 EUR
10+4.06 EUR
50+3.12 EUR
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500+2.28 EUR
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FCD7N60TM-WS FCD7N60-D.pdf
FCD7N60TM-WS
Hersteller: onsemi
MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab
auf Bestellung 681 Stücke:
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1+5.93 EUR
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FCH47N60-F133 FCH47N60.pdf
FCH47N60-F133
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
auf Bestellung 431 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+16.02 EUR
7+13.46 EUR
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FCH47N60-F133 FCH47N60-D.PDF
FCH47N60-F133
Hersteller: onsemi
MOSFETs 600V N-Channel MOSFET
auf Bestellung 630 Stücke:
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1+27.18 EUR
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FCH47N60-F133 FCH47N60-D.PDF
FCH47N60-F133
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 300 Stücke:
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AnzahlPrivatkunde
1+24.42 EUR
30+14.85 EUR
60+13.71 EUR
120+12.77 EUR
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FCH47N60F-F133 FCH47N60F-D.PDF
FCH47N60F-F133FCH47N60F-F133
FCH47N60F-F133FCH47N60F-F133
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.71 EUR
10+13.9 EUR
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FCH47N60F-F133 FCH47N60F-D.PDF
FCH47N60F-F133
Hersteller: onsemi
MOSFETs 600V N-Channel MOSFET
auf Bestellung 382 Stücke:
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AnzahlPrivatkunde
1+29.79 EUR
10+22.68 EUR
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FCH47N60F-F133 FCH47N60F-D.PDF
FCH47N60F-F133
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 706 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.2 EUR
30+16.03 EUR
60+14.82 EUR
120+13.98 EUR
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FCI7N60 FCI7N60-D.pdf
FCI7N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 2911 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.33 EUR
10+4.81 EUR
50+3.74 EUR
100+3.39 EUR
500+2.78 EUR
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FCI7N60 FCI7N60-D.pdf
FCI7N60
Hersteller: onsemi
MOSFETs HIGH POWER
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.14 EUR
10+4.69 EUR
100+3.28 EUR
500+2.93 EUR
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FCP7N60 FCPF7N60-D.pdf
FCP7N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 10510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.56 EUR
10+4.28 EUR
50+3.31 EUR
100+3 EUR
500+2.45 EUR
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FCP7N60 FCPF7N60-D.pdf
FCP7N60
Hersteller: onsemi
MOSFETs 600V N-Channel SuperFET
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.62 EUR
10+3.37 EUR
100+3.01 EUR
500+2.51 EUR
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FCP7N60 FCP7N60-FCPF7N60.pdf
Hersteller: ONS/FAI
IGBT, N-ch, 7A, 600V, TO-220 Транзистори
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+21.63 EUR
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FDPF17N60NT fdpf17n60nt-d.pdf
FDPF17N60NT
Hersteller: onsemi
MOSFETs UniFET2 600V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.91 EUR
10+4.06 EUR
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FDPF17N60NT fdpf17n60nt-d.pdf
FDPF17N60NT
Hersteller: onsemi
Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.08 EUR
10+5.33 EUR
50+4.16 EUR
100+3.78 EUR
500+3.12 EUR
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FDU7N60NZTU info-tfdu7n60nztu.pdf
FDU7N60NZTU
Hersteller: Fairchild
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+2.21 EUR
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FDU7N60NZTU info-tfdu7n60nztu.pdf
FDU7N60NZTU
Hersteller: Fairchild
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+2.21 EUR
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FGPF7N60LSDTU FAIRS25183-1.pdf?t.download=true&u=5oefqw
FGPF7N60LSDTU
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 120ns/410ns
Switching Energy: 270µJ (on), 3.8mJ (off)
Test Condition: 300V, 7A, 470Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 45 W
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
371+1.49 EUR
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FGPF7N60RUFDTU FAIRS24360-1.pdf?t.download=true&u=5oefqw
FGPF7N60RUFDTU
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 60ns/60ns
Switching Energy: 230µJ (on), 100µJ (off)
Test Condition: 300V, 7A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 41 W
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HGTD7N60B3 HRISSA43-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 14A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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HGTD7N60B3S HRISSA43-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 72µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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HGTP7N60C3 HRISS471-1.pdf?t.download=true&u=5oefqw
HGTP7N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220AB
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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267+2.05 EUR
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IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
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IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Транзистори
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L47N-600-1 DDEController?Action=srchrtrv&DocNm=1-1773962-8&DocType=Data%20Sheet&DocLang=English&DocFormat=pdf&PartCntxt=L47N-600-1
L47N-600-1
Hersteller: TE Connectivity / DEUTSCH
Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING
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L47N-600-1 DDEController?Action=srchrtrv&DocNm=1-1773962-8&DocType=Data%20Sheet&DocLang=English&DocFormat=pdf&PartCntxt=L47N-600-1
L47N-600-1
Hersteller: TE Connectivity Deutsch Connectors
Description: LYD STEEL 3/64 X 6 NYLON COATING
Packaging: Box
For Use With/Related Products: Circular Connectors
Material: Nylon
Accessory Type: Cap (Cover), Protective
Part Status: Active
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3+9.42 EUR
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25+7.51 EUR
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100+6.82 EUR
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M83-LML3M7N60-0000-000 M83_LML3M7NXX_0000_000.pdf
M83-LML3M7N60-0000-000
Hersteller: Harwin
Headers & Wire Housings Datamate J-Tek 3R 60P M HORZ PC TAIL 4MM W/JS
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8+70.31 EUR
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M83-LML3M7N60-0000-000 PD004-Product-Datasheet-Datamate-range-signal-connectors-HRi.pdf
M83-LML3M7N60-0000-000
Hersteller: Harwin Inc.
Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Tube
Connector Type: Header
Voltage Rating: 800V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Part Status: Active
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
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MGP7N60E ONSM-S-A0005942327-1.pdf?t.download=true&u=5oefqw
MGP7N60E
Hersteller: onsemi
Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
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MGP7N60ED ONSM-S-A0005942496-1.pdf?t.download=true&u=5oefqw
MGP7N60ED
Hersteller: onsemi
Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
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NTHL017N60S5H nthl017n60s5h-d.pdf
Hersteller: onsemi
MOSFETs SF5 600V FAST 17MOHM WITH
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NTHL017N60S5H nthl017n60s5h-d.pdf
NTHL017N60S5H
Hersteller: onsemi
Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
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SIHD7N60E-GE3 sihd7n60e.pdf
SIHD7N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 3172 Stücke:
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1+5.28 EUR
10+3.42 EUR
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1000+1.78 EUR
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6000+1.67 EUR
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SIHG47N60AE-GE3 sihg47n60ae.pdf
SIHG47N60AE-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-247AC
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1+15.68 EUR
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SIHG47N60AE-GE3 sihg47n60ae.pdf
SIHG47N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
auf Bestellung 405 Stücke:
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2+17.28 EUR
25+10.35 EUR
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SIHG47N60AEF-GE3 sihg47n60aef.pdf
SIHG47N60AEF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
auf Bestellung 216 Stücke:
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2+18.87 EUR
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SIHG47N60AEF-GE3 sihg47n60aef.pdf
SIHG47N60AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
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SIHG47N60E-E3 sihg47n60e.pdf
SIHG47N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 501 Stücke:
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25+12.45 EUR
50+11.41 EUR
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SIHG47N60E-E3 sihg47n60e.pdf
SIHG47N60E-E3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 781 Stücke:
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SIHG47N60E-GE3 SIHG47N60E.pdf
SIHG47N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
auf Bestellung 212 Stücke:
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SIHG47N60E-GE3 sihg47n60e.pdf
SIHG47N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 457 Stücke:
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SIHG47N60E-GE3 sihg47n60e.pdf
SIHG47N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 1754 Stücke:
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SIHG47N60EF-GE3 sihg47n60ef.pdf
SIHG47N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
auf Bestellung 403 Stücke:
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2+20.8 EUR
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