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SPW47N60C3 SPW47N60C3
Produktcode: 43153 		Infineon Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 47
Rds(on), Ohm: 01.07.2000
Ciss, pF/Qg, nC: 6800/24
JHGF: THT
auf Bestellung 46 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 8 Stück:
1+6.6 EUR
SSS7N60B SSS7N60B
Produktcode: 32907 		Fairchild SSP7N60Buii.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 7
Rds(on), Ohm: 01.02.2015
Ciss, pF/Qg, nC: 1380/38
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 37 Stück
1+1.13 EUR
10+ 0.95 EUR
7N60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
7N60 SMFSC°ЧЖ¬
auf Bestellung 175000 Stücke:
Lieferzeit 21-28 Tag (e)
7N60 AAT TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
AOTF7N60FD AOTF7N60FD ALPHA & OMEGA SEMICONDUCTOR AOTF7N60FD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
83+ 0.87 EUR
93+ 0.78 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 75
AOTF7N60FD AOTF7N60FD ALPHA & OMEGA SEMICONDUCTOR AOTF7N60FD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)
75+0.96 EUR
83+ 0.87 EUR
93+ 0.78 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 75
APT47N60BC3G APT47N60BC3G MICROCHIP (MICROSEMI) APT47N60BC3G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.97 EUR
4+ 23.04 EUR
Mindestbestellmenge: 3
APT47N60BC3G APT47N60BC3G MICROCHIP (MICROSEMI) APT47N60BC3G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.97 EUR
4+ 23.04 EUR
Mindestbestellmenge: 3
APT47N60SC3G APT47N60SC3G Microchip Technology 6283-apt47n60bc3g-apt47n60sc3g-datasheet MOSFET MOSFET SUPERJUNCTION 600 V 47 A TO-268
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.69 EUR
10+ 22.67 EUR
25+ 22.42 EUR
100+ 20.52 EUR
APT77N60JC3 APT77N60JC3 Microchip Technology 7257-apt77n60jc3-datasheet Discrete Semiconductor Modules MOSFET SUPERJUNCTION 600 V 77 A SOT-227
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.83 EUR
100+ 54.31 EUR
APT77N60JC3 APT77N60JC3 Microchip Technology 7257-apt77n60jc3-datasheet Description: MOSFET N-CH 600V 77A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.25 EUR
100+ 51.35 EUR
APT77N60SC6 APT77N60SC6 Microchip Technology index.php?option=com_docman&task=doc_download&gid=77173 MOSFET MOSFET SUPERJUNCTION 600 V 77 A TO-268
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.65 EUR
100+ 20.42 EUR
APT77N60SC6/TR APT77N60SC6/TR Microchip Technology 77173-apt77n60bc6-apt77n60sc6-datasheet Description: MOSFET N-CH 600V 77A D3PAK
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.54 EUR
100+ 22.05 EUR
D2FC-F-7N(60M) D2FC-F-7N(60M) OMRON Electronic Components D2FC.pdf Category: Microswitches SNAP ACTION
Description: Microswitch SNAP ACTION; 0.001A/6VDC; without lever; SPST-NO
Type of switch: microswitch SNAP ACTION
DC contacts rating @R: 0.001A / 6V DC
Switches features: without lever
Contacts configuration: SPST-NO
Max. contact resistance:: 100mΩ
Switching method: OFF-(ON)
Number of positions: 2
Stable positions number: 1
IP rating: IP40
Leads: for PCB
Body dimensions: 12.8x5.8x6.5mm
Mechanical durability: 60000000 cycles
Operating temperature: -25...65°C
Operating Force: 0.59N
Min. insulation resistance: 0.1GΩ
Terminal pitch: 5.08mm
Contact material: silver
Mounting: PCB
Manufacturer series: D2FC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 809 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
99+ 0.73 EUR
104+ 0.69 EUR
126+ 0.57 EUR
133+ 0.54 EUR
500+ 0.52 EUR
Mindestbestellmenge: 91
D2FC-F-7N(60M) D2FC-F-7N(60M) Omron Electronics Omron_D2FC_Datasheet_EN-3219028.pdf Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch
auf Bestellung 3326 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.06 EUR
10+ 0.9 EUR
100+ 0.86 EUR
1000+ 0.73 EUR
5000+ 0.71 EUR
10000+ 0.7 EUR
Mindestbestellmenge: 3
D2FC-F-7N(60M) D2FC-F-7N(60M) Omron Electronics Inc-EMC Div D2FC_Datasheet_EN.pdf Description: SWITCH SNP ACT SPST-NO 0.001A 6V
Packaging: Bag
Current Rating (Amps): 1mA (DC)
Mounting Type: Through Hole
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -25°C ~ 65°C
Termination Style: PC Pin
Actuator Type: Round (Pin Plunger)
Operating Force: 60gf
Ingress Protection: IP40
Release Force: 24gf
Differential Travel: 0.005" (0.13mm)
Overtravel: 0.008" (0.2mm)
Operating Position: 0.272" (6.9mm)
Part Status: Active
Voltage Rating - DC: 6 V
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
18+ 1.01 EUR
25+ 0.96 EUR
50+ 0.91 EUR
100+ 0.87 EUR
250+ 0.83 EUR
500+ 0.75 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
FCA47N60 FCA47N60 onsemi fca47n60_f109-d.pdf Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.78 EUR
30+ 14.39 EUR
120+ 13.54 EUR
FCA47N60 FCA47N60 onsemi / Fairchild FCA47N60_F109_D-2311857.pdf MOSFET 650V SUPER FET
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.77 EUR
10+ 15.79 EUR
25+ 14.29 EUR
50+ 13.9 EUR
100+ 13.18 EUR
250+ 12.97 EUR
450+ 12.07 EUR
FCA47N60-F109 FCA47N60-F109 onsemi fca47n60_f109-d.pdf Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.31 EUR
30+ 15.42 EUR
120+ 13.79 EUR
FCA47N60-F109 FCA47N60-F109 onsemi fca47n60_f109-d.pdf Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.31 EUR
30+ 15.42 EUR
120+ 13.79 EUR
FCA47N60-F109 FCA47N60-F109 onsemi / Fairchild FCA47N60_F109_D-2311857.pdf MOSFET 650V SUPER FET
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.18 EUR
10+ 18.22 EUR
25+ 14.84 EUR
100+ 13.69 EUR
250+ 13.22 EUR
450+ 11.7 EUR
900+ 10.88 EUR
FCA47N60-F109 FCA47N60-F109 ON Semiconductor fca47n60_f109-d.pdf Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
FCA47N60F FCA47N60F onsemi / Fairchild FCA47N60F_D-2311451.pdf MOSFET 47A, 600V SuperFET
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.5 EUR
10+ 16.28 EUR
25+ 15.77 EUR
50+ 14.08 EUR
100+ 13.04 EUR
450+ 11.69 EUR
900+ 11.58 EUR
FCA47N60F FCA47N60F onsemi fca47n60f-d.pdf Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 9684 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.62 EUR
30+ 15.07 EUR
120+ 14.18 EUR
510+ 12.85 EUR
1020+ 11.79 EUR
FCD7N60TM FCD7N60TM onsemi fcd7n60-d.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+ 3.09 EUR
100+ 2.46 EUR
500+ 2.08 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 5
FCD7N60TM FCD7N60TM onsemi fcd7n60-d.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.68 EUR
5000+ 1.61 EUR
Mindestbestellmenge: 2500
FCD7N60TM FCD7N60TM onsemi / Fairchild FCD7N60_D-2311742.pdf MOSFET N-CH/600V/7A SuperFET
auf Bestellung 20601 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.56 EUR
10+ 3.01 EUR
100+ 2.45 EUR
250+ 2.25 EUR
500+ 2.04 EUR
1000+ 1.75 EUR
2500+ 1.61 EUR
FCD7N60TM-WS FCD7N60TM-WS onsemi / Fairchild FCD7N60_D-2311742.pdf MOSFET Trans N-Ch 600V 7A 3-Pin 2+Tab
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.75 EUR
500+ 1.74 EUR
2500+ 1.53 EUR
Mindestbestellmenge: 2
FCH47N60-F133 FCH47N60-F133 onsemi / Fairchild FCH47N60_D-2311774.pdf MOSFET 600V N-Channel MOSFET
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.58 EUR
10+ 15.49 EUR
25+ 15.07 EUR
50+ 14.2 EUR
100+ 13.38 EUR
250+ 10.79 EUR
FCH47N60-F133 FCH47N60-F133 onsemi fch47n60-d.pdf Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.69 EUR
30+ 14.32 EUR
120+ 13.48 EUR
FCH47N60F-F133 FCH47N60F-F133 onsemi fch47n60f-d.pdf Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 447 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.36 EUR
30+ 15.68 EUR
120+ 14.76 EUR
FCH47N60F-F133 FCH47N60F-F133 onsemi / Fairchild FCH47N60F_D-2311709.pdf MOSFET 600V N-Channel MOSFET
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.24 EUR
10+ 17.97 EUR
25+ 15.58 EUR
50+ 15.07 EUR
100+ 14.59 EUR
250+ 13.9 EUR
450+ 12.97 EUR
FCI7N60 FCI7N60 onsemi / Fairchild FCI7N60_D-2311613.pdf MOSFET HIGH POWER
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.49 EUR
10+ 3.77 EUR
50+ 3.54 EUR
100+ 3.03 EUR
250+ 2.87 EUR
500+ 2.69 EUR
1000+ 2.18 EUR
FCI7N60 FCI7N60 onsemi fci7n60-d.pdf Description: MOSFET N-CH 600V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.52 EUR
10+ 3.79 EUR
100+ 3.06 EUR
500+ 2.72 EUR
1000+ 2.33 EUR
Mindestbestellmenge: 4
FCP7N60 FCP7N60 onsemi / Fairchild FCPF7N60_D-2311981.pdf MOSFET 600V N-Channel SuperFET
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.28 EUR
10+ 3.56 EUR
100+ 2.83 EUR
250+ 2.6 EUR
500+ 2.38 EUR
1000+ 2.01 EUR
3000+ 1.94 EUR
FCP7N60 FCP7N60 onsemi fcpf7n60-d.pdf Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 965 Stücke:
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100+ 2.85 EUR
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FCP7N60 FCP7N60 ON Semiconductor fcpf7n60.pdf Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
FCPF7N60 FCPF7N60 onsemi fcpf7n60-d.pdf Description: MOSFET N-CH 600V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 978 Stücke:
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100+ 2.99 EUR
500+ 2.53 EUR
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FCPF7N60 FCPF7N60 onsemi / Fairchild FCPF7N60_D-2311981.pdf MOSFET 600V N-Channel SuperFET
auf Bestellung 35 Stücke:
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500+ 2.5 EUR
1000+ 2.16 EUR
FDPF17N60NT FDPF17N60NT onsemi fdpf17n60nt-d.pdf Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 444 Stücke:
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FDU7N60NZTU Fairchild fdu7n60nztu-d.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.17 EUR
Mindestbestellmenge: 20
FDU7N60NZTU Fairchild fdu7n60nztu-d.pdf Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.17 EUR
Mindestbestellmenge: 20
FGPF7N60LSDTU FGPF7N60LSDTU Fairchild Semiconductor FAIRS25183-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 120ns/410ns
Switching Energy: 270µJ (on), 3.8mJ (off)
Test Condition: 300V, 7A, 470Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 45 W
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
544+0.91 EUR
Mindestbestellmenge: 544
FGPF7N60RUFDTU FGPF7N60RUFDTU Fairchild Semiconductor FAIRS24360-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 60ns/60ns
Switching Energy: 230µJ (on), 100µJ (off)
Test Condition: 300V, 7A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 41 W
auf Bestellung 1574 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.84 EUR
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FQI7N60TU FQI7N60TU onsemi fqi7n60-d.pdf Description: MOSFET N-CH 600V 7.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.88 EUR
10+ 4.05 EUR
100+ 3.22 EUR
500+ 2.73 EUR
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IRFP27N60KPBF IRFP27N60KPBF VISHAY IRFP27N60-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 208 Stücke:
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11+7.14 EUR
15+ 4.78 EUR
Mindestbestellmenge: 11
IRFP27N60KPBF IRFP27N60KPBF Vishay Siliconix TO247AC_Side.jpg Description: MOSFET N-CH 600V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
auf Bestellung 3084 Stücke:
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2+15.54 EUR
25+ 12.41 EUR
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500+ 9.8 EUR
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IRFP27N60KPBF IRFP27N60KPBF Vishay Semiconductors TO247AC_Side.jpg MOSFET RECOMMENDED ALT IRFP27N60K
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.44 EUR
10+ 13.24 EUR
100+ 11.04 EUR
500+ 9.72 EUR
1000+ 8.76 EUR
IXKH47N60C IXKH47N60C IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkh47n60c_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
auf Bestellung 1110 Stücke:
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1+40.36 EUR
10+ 35.86 EUR
100+ 31.37 EUR
500+ 26.77 EUR
IXKH47N60C IXKH47N60C IXYS media-3319296.pdf MOSFET 47 Amps 600V 70 Rds
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.09 EUR
10+ 35.64 EUR
30+ 33.25 EUR
60+ 32.17 EUR
120+ 31.15 EUR
270+ 29.08 EUR
510+ 26.72 EUR
IXKR47N60C5 IXKR47N60C5 IXYS IXKR47N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.87 EUR
4+ 23.51 EUR
Mindestbestellmenge: 3
IXKR47N60C5 IXKR47N60C5 IXYS media-3323195.pdf MOSFET 47 Amps 600V 0.045 Rds
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.29 EUR
10+ 37.79 EUR
30+ 33.4 EUR
60+ 32.81 EUR
120+ 31.29 EUR
270+ 29.48 EUR
IXKR47N60C5 IXKR47N60C5 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_super_junction_ixkr47n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.55 EUR
30+ 33.62 EUR
L47N-600-1 TE Connectivity / DEUTSCH ENG_SS_114_151016_A-2497991.pdf Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.68 EUR
L47N-600-1 L47N-600-1 TE Connectivity Deutsch Connectors product-L47N-600-1.datasheet.pdf Description: LYD STEEL 3/64 X 6 NYLON COATING
Packaging: Box
For Use With/Related Products: Circular Connectors
Material: Nylon
Accessory Type: Cap (Cover), Protective
Part Status: Active
auf Bestellung 265 Stücke:
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3+8.62 EUR
10+ 7.83 EUR
25+ 7.41 EUR
50+ 7.24 EUR
100+ 6.9 EUR
250+ 6.03 EUR
Mindestbestellmenge: 3
M83-LML3M7N60-0000-000 M83-LML3M7N60-0000-000 Harwin Inc. M83-LML3M7NXX-0000-000.pdf Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Tube
Connector Type: Header
Voltage Rating: 800V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Part Status: Active
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
auf Bestellung 433 Stücke:
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1+69.98 EUR
16+ 61.29 EUR
32+ 58.64 EUR
56+ 56.75 EUR
104+ 54.86 EUR
256+ 51.83 EUR
M83-LML3M7N60-0000-000 M83-LML3M7N60-0000-000 Harwin M83-LML3M7NXX-0000-000.pdf Headers & Wire Housings 3R 60P M HORZ PC TAIL 4MM W/JS
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.5 EUR
8+ 61.83 EUR
24+ 58.26 EUR
56+ 56.37 EUR
104+ 54.49 EUR
256+ 51.48 EUR
MGP7N60E MGP7N60E onsemi ONSM-S-A0005942327-1.pdf?t.download=true&u=5oefqw Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
auf Bestellung 6760 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.82 EUR
Mindestbestellmenge: 606
MGP7N60ED MGP7N60ED onsemi ONSM-S-A0005942496-1.pdf?t.download=true&u=5oefqw Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
523+0.94 EUR
Mindestbestellmenge: 523
SPW47N60C3
Produktcode: 43153
SPW47N60C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 47
Rds(on), Ohm: 01.07.2000
Ciss, pF/Qg, nC: 6800/24
JHGF: THT
auf Bestellung 46 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 8 Stück:
Anzahl Preis ohne MwSt
1+6.6 EUR
SSS7N60B
Produktcode: 32907		 SSP7N60Buii.pdf
SSS7N60B
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 7
Rds(on), Ohm: 01.02.2015
Ciss, pF/Qg, nC: 1380/38
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 37 Stück
Anzahl Preis ohne MwSt
1+1.13 EUR
10+ 0.95 EUR
7N60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
7N60
Hersteller: SMFSC°ЧЖ¬
auf Bestellung 175000 Stücke:
Lieferzeit 21-28 Tag (e)
7N60 AAT
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
AOTF7N60FD AOTF7N60FD-DTE.pdf
AOTF7N60FD
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
83+ 0.87 EUR
93+ 0.78 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 75
AOTF7N60FD AOTF7N60FD-DTE.pdf
AOTF7N60FD
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
83+ 0.87 EUR
93+ 0.78 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 75
APT47N60BC3G APT47N60BC3G.pdf
APT47N60BC3G
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+23.97 EUR
4+ 23.04 EUR
Mindestbestellmenge: 3
APT47N60BC3G APT47N60BC3G.pdf
APT47N60BC3G
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+23.97 EUR
4+ 23.04 EUR
Mindestbestellmenge: 3
APT47N60SC3G 6283-apt47n60bc3g-apt47n60sc3g-datasheet
APT47N60SC3G
Hersteller: Microchip Technology
MOSFET MOSFET SUPERJUNCTION 600 V 47 A TO-268
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.69 EUR
10+ 22.67 EUR
25+ 22.42 EUR
100+ 20.52 EUR
APT77N60JC3 7257-apt77n60jc3-datasheet
APT77N60JC3
Hersteller: Microchip Technology
Discrete Semiconductor Modules MOSFET SUPERJUNCTION 600 V 77 A SOT-227
auf Bestellung 1 Stücke:
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Anzahl Preis ohne MwSt
1+62.83 EUR
100+ 54.31 EUR
APT77N60JC3 7257-apt77n60jc3-datasheet
APT77N60JC3
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+63.25 EUR
100+ 51.35 EUR
APT77N60SC6 index.php?option=com_docman&task=doc_download&gid=77173
APT77N60SC6
Hersteller: Microchip Technology
MOSFET MOSFET SUPERJUNCTION 600 V 77 A TO-268
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.65 EUR
100+ 20.42 EUR
APT77N60SC6/TR 77173-apt77n60bc6-apt77n60sc6-datasheet
APT77N60SC6/TR
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A D3PAK
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+25.54 EUR
100+ 22.05 EUR
D2FC-F-7N(60M) D2FC.pdf
D2FC-F-7N(60M)
Hersteller: OMRON Electronic Components
Category: Microswitches SNAP ACTION
Description: Microswitch SNAP ACTION; 0.001A/6VDC; without lever; SPST-NO
Type of switch: microswitch SNAP ACTION
DC contacts rating @R: 0.001A / 6V DC
Switches features: without lever
Contacts configuration: SPST-NO
Max. contact resistance:: 100mΩ
Switching method: OFF-(ON)
Number of positions: 2
Stable positions number: 1
IP rating: IP40
Leads: for PCB
Body dimensions: 12.8x5.8x6.5mm
Mechanical durability: 60000000 cycles
Operating temperature: -25...65°C
Operating Force: 0.59N
Min. insulation resistance: 0.1GΩ
Terminal pitch: 5.08mm
Contact material: silver
Mounting: PCB
Manufacturer series: D2FC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 809 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
99+ 0.73 EUR
104+ 0.69 EUR
126+ 0.57 EUR
133+ 0.54 EUR
500+ 0.52 EUR
Mindestbestellmenge: 91
D2FC-F-7N(60M) Omron_D2FC_Datasheet_EN-3219028.pdf
D2FC-F-7N(60M)
Hersteller: Omron Electronics
Basic / Snap Action Switches Ultra Subminiature 0.59N OF, 60M ops, Orange Mechanical mouse switch
auf Bestellung 3326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.06 EUR
10+ 0.9 EUR
100+ 0.86 EUR
1000+ 0.73 EUR
5000+ 0.71 EUR
10000+ 0.7 EUR
Mindestbestellmenge: 3
D2FC-F-7N(60M) D2FC_Datasheet_EN.pdf
D2FC-F-7N(60M)
Hersteller: Omron Electronics Inc-EMC Div
Description: SWITCH SNP ACT SPST-NO 0.001A 6V
Packaging: Bag
Current Rating (Amps): 1mA (DC)
Mounting Type: Through Hole
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -25°C ~ 65°C
Termination Style: PC Pin
Actuator Type: Round (Pin Plunger)
Operating Force: 60gf
Ingress Protection: IP40
Release Force: 24gf
Differential Travel: 0.005" (0.13mm)
Overtravel: 0.008" (0.2mm)
Operating Position: 0.272" (6.9mm)
Part Status: Active
Voltage Rating - DC: 6 V
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 1.01 EUR
25+ 0.96 EUR
50+ 0.91 EUR
100+ 0.87 EUR
250+ 0.83 EUR
500+ 0.75 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
FCA47N60 fca47n60_f109-d.pdf
FCA47N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.78 EUR
30+ 14.39 EUR
120+ 13.54 EUR
FCA47N60 FCA47N60_F109_D-2311857.pdf
FCA47N60
Hersteller: onsemi / Fairchild
MOSFET 650V SUPER FET
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.77 EUR
10+ 15.79 EUR
25+ 14.29 EUR
50+ 13.9 EUR
100+ 13.18 EUR
250+ 12.97 EUR
450+ 12.07 EUR
FCA47N60-F109 fca47n60_f109-d.pdf
FCA47N60-F109
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.31 EUR
30+ 15.42 EUR
120+ 13.79 EUR
FCA47N60-F109 fca47n60_f109-d.pdf
FCA47N60-F109
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.31 EUR
30+ 15.42 EUR
120+ 13.79 EUR
FCA47N60-F109 FCA47N60_F109_D-2311857.pdf
FCA47N60-F109
Hersteller: onsemi / Fairchild
MOSFET 650V SUPER FET
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.18 EUR
10+ 18.22 EUR
25+ 14.84 EUR
100+ 13.69 EUR
250+ 13.22 EUR
450+ 11.7 EUR
900+ 10.88 EUR
FCA47N60-F109 fca47n60_f109-d.pdf
FCA47N60-F109
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
FCA47N60F FCA47N60F_D-2311451.pdf
FCA47N60F
Hersteller: onsemi / Fairchild
MOSFET 47A, 600V SuperFET
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.5 EUR
10+ 16.28 EUR
25+ 15.77 EUR
50+ 14.08 EUR
100+ 13.04 EUR
450+ 11.69 EUR
900+ 11.58 EUR
FCA47N60F fca47n60f-d.pdf
FCA47N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 9684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.62 EUR
30+ 15.07 EUR
120+ 14.18 EUR
510+ 12.85 EUR
1020+ 11.79 EUR
FCD7N60TM fcd7n60-d.pdf
FCD7N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.73 EUR
10+ 3.09 EUR
100+ 2.46 EUR
500+ 2.08 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 5
FCD7N60TM fcd7n60-d.pdf
FCD7N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.68 EUR
5000+ 1.61 EUR
Mindestbestellmenge: 2500
FCD7N60TM FCD7N60_D-2311742.pdf
FCD7N60TM
Hersteller: onsemi / Fairchild
MOSFET N-CH/600V/7A SuperFET
auf Bestellung 20601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.56 EUR
10+ 3.01 EUR
100+ 2.45 EUR
250+ 2.25 EUR
500+ 2.04 EUR
1000+ 1.75 EUR
2500+ 1.61 EUR
FCD7N60TM-WS FCD7N60_D-2311742.pdf
FCD7N60TM-WS
Hersteller: onsemi / Fairchild
MOSFET Trans N-Ch 600V 7A 3-Pin 2+Tab
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.75 EUR
500+ 1.74 EUR
2500+ 1.53 EUR
Mindestbestellmenge: 2
FCH47N60-F133 FCH47N60_D-2311774.pdf
FCH47N60-F133
Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel MOSFET
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.58 EUR
10+ 15.49 EUR
25+ 15.07 EUR
50+ 14.2 EUR
100+ 13.38 EUR
250+ 10.79 EUR
FCH47N60-F133 fch47n60-d.pdf
FCH47N60-F133
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.69 EUR
30+ 14.32 EUR
120+ 13.48 EUR
FCH47N60F-F133 fch47n60f-d.pdf
FCH47N60F-F133
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.36 EUR
30+ 15.68 EUR
120+ 14.76 EUR
FCH47N60F-F133 FCH47N60F_D-2311709.pdf
FCH47N60F-F133
Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel MOSFET
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.24 EUR
10+ 17.97 EUR
25+ 15.58 EUR
50+ 15.07 EUR
100+ 14.59 EUR
250+ 13.9 EUR
450+ 12.97 EUR
FCI7N60 FCI7N60_D-2311613.pdf
FCI7N60
Hersteller: onsemi / Fairchild
MOSFET HIGH POWER
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.49 EUR
10+ 3.77 EUR
50+ 3.54 EUR
100+ 3.03 EUR
250+ 2.87 EUR
500+ 2.69 EUR
1000+ 2.18 EUR
FCI7N60 fci7n60-d.pdf
FCI7N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.52 EUR
10+ 3.79 EUR
100+ 3.06 EUR
500+ 2.72 EUR
1000+ 2.33 EUR
Mindestbestellmenge: 4
FCP7N60 FCPF7N60_D-2311981.pdf
FCP7N60
Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel SuperFET
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.28 EUR
10+ 3.56 EUR
100+ 2.83 EUR
250+ 2.6 EUR
500+ 2.38 EUR
1000+ 2.01 EUR
3000+ 1.94 EUR
FCP7N60 fcpf7n60-d.pdf
FCP7N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.31 EUR
50+ 3.47 EUR
100+ 2.85 EUR
500+ 2.41 EUR
Mindestbestellmenge: 5
FCP7N60 fcpf7n60.pdf
FCP7N60
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
FCPF7N60 fcpf7n60-d.pdf
FCPF7N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.52 EUR
50+ 3.63 EUR
100+ 2.99 EUR
500+ 2.53 EUR
Mindestbestellmenge: 4
FCPF7N60 FCPF7N60_D-2311981.pdf
FCPF7N60
Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel SuperFET
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.7 EUR
10+ 3.12 EUR
100+ 2.75 EUR
500+ 2.5 EUR
1000+ 2.16 EUR
FDPF17N60NT fdpf17n60nt-d.pdf
FDPF17N60NT
Hersteller: onsemi
Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.16 EUR
50+ 4.08 EUR
100+ 3.5 EUR
Mindestbestellmenge: 4
FDU7N60NZTU fdu7n60nztu-d.pdf
Hersteller: Fairchild
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.17 EUR
Mindestbestellmenge: 20
FDU7N60NZTU fdu7n60nztu-d.pdf
Hersteller: Fairchild
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK FDU7N60NZTU TFDU7n60nztu
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.17 EUR
Mindestbestellmenge: 20
FGPF7N60LSDTU FAIRS25183-1.pdf?t.download=true&u=5oefqw
FGPF7N60LSDTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 120ns/410ns
Switching Energy: 270µJ (on), 3.8mJ (off)
Test Condition: 300V, 7A, 470Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 45 W
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
544+0.91 EUR
Mindestbestellmenge: 544
FGPF7N60RUFDTU FAIRS24360-1.pdf?t.download=true&u=5oefqw
FGPF7N60RUFDTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 60ns/60ns
Switching Energy: 230µJ (on), 100µJ (off)
Test Condition: 300V, 7A, 30Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 41 W
auf Bestellung 1574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.84 EUR
Mindestbestellmenge: 592
FQI7N60TU fqi7n60-d.pdf
FQI7N60TU
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.88 EUR
10+ 4.05 EUR
100+ 3.22 EUR
500+ 2.73 EUR
Mindestbestellmenge: 4
IRFP27N60KPBF IRFP27N60-DTE.pdf
IRFP27N60KPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 208 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
15+ 4.78 EUR
Mindestbestellmenge: 11
IRFP27N60KPBF TO247AC_Side.jpg
IRFP27N60KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.54 EUR
25+ 12.41 EUR
100+ 11.1 EUR
500+ 9.8 EUR
1000+ 8.82 EUR
Mindestbestellmenge: 2
IRFP27N60KPBF TO247AC_Side.jpg
IRFP27N60KPBF
Hersteller: Vishay Semiconductors
MOSFET RECOMMENDED ALT IRFP27N60K
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.44 EUR
10+ 13.24 EUR
100+ 11.04 EUR
500+ 9.72 EUR
1000+ 8.76 EUR
IXKH47N60C littelfuse_discrete_mosfets_n-channel_super_junction_ixkh47n60c_datasheet.pdf.pdf
IXKH47N60C
Hersteller: IXYS
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
auf Bestellung 1110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.36 EUR
10+ 35.86 EUR
100+ 31.37 EUR
500+ 26.77 EUR
IXKH47N60C media-3319296.pdf
IXKH47N60C
Hersteller: IXYS
MOSFET 47 Amps 600V 70 Rds
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.09 EUR
10+ 35.64 EUR
30+ 33.25 EUR
60+ 32.17 EUR
120+ 31.15 EUR
270+ 29.08 EUR
510+ 26.72 EUR
IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+24.87 EUR
4+ 23.51 EUR
Mindestbestellmenge: 3
IXKR47N60C5 media-3323195.pdf
IXKR47N60C5
Hersteller: IXYS
MOSFET 47 Amps 600V 0.045 Rds
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.29 EUR
10+ 37.79 EUR
30+ 33.4 EUR
60+ 32.81 EUR
120+ 31.29 EUR
270+ 29.48 EUR
IXKR47N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixkr47n60c5_datasheet.pdf.pdf
IXKR47N60C5
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 47A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.55 EUR
30+ 33.62 EUR
L47N-600-1 ENG_SS_114_151016_A-2497991.pdf
Hersteller: TE Connectivity / DEUTSCH
Automotive Connectors LYD STEEL 3/64 X 6 NYLON COATING
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+21.68 EUR
L47N-600-1 product-L47N-600-1.datasheet.pdf
L47N-600-1
Hersteller: TE Connectivity Deutsch Connectors
Description: LYD STEEL 3/64 X 6 NYLON COATING
Packaging: Box
For Use With/Related Products: Circular Connectors
Material: Nylon
Accessory Type: Cap (Cover), Protective
Part Status: Active
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.62 EUR
10+ 7.83 EUR
25+ 7.41 EUR
50+ 7.24 EUR
100+ 6.9 EUR
250+ 6.03 EUR
Mindestbestellmenge: 3
M83-LML3M7N60-0000-000 M83-LML3M7NXX-0000-000.pdf
M83-LML3M7N60-0000-000
Hersteller: Harwin Inc.
Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Tube
Connector Type: Header
Voltage Rating: 800V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Part Status: Active
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+69.98 EUR
16+ 61.29 EUR
32+ 58.64 EUR
56+ 56.75 EUR
104+ 54.86 EUR
256+ 51.83 EUR
M83-LML3M7N60-0000-000 M83-LML3M7NXX-0000-000.pdf
M83-LML3M7N60-0000-000
Hersteller: Harwin
Headers & Wire Housings 3R 60P M HORZ PC TAIL 4MM W/JS
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+69.5 EUR
8+ 61.83 EUR
24+ 58.26 EUR
56+ 56.37 EUR
104+ 54.49 EUR
256+ 51.48 EUR
MGP7N60E ONSM-S-A0005942327-1.pdf?t.download=true&u=5oefqw
MGP7N60E
Hersteller: onsemi
Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
auf Bestellung 6760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.82 EUR
Mindestbestellmenge: 606
MGP7N60ED ONSM-S-A0005942496-1.pdf?t.download=true&u=5oefqw
MGP7N60ED
Hersteller: onsemi
Description: IGBT, 10A, 600V, N-CHANNEL
Packaging: Bulk
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
523+0.94 EUR
Mindestbestellmenge: 523
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