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IRFS9N60A IRFS9N60A
Produktcode: 77974
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Vishay irfs9n60a_datasheet.pdf Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263)
Uds,V: 600
Idd,A: 05.08.2015
Rds(on), Ohm: 0.75
Ciss, pF/Qg, nC: 1400/49
JHGF: SMD
verfügbar: 4 Stück
1+0.70 EUR
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 15695 Stücke:
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FCMT199N60 FCMT199N60 onsemi / Fairchild fcmt199n60-d.pdf MOSFETs 199mohm 600V SuperFET2
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
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FCMT299N60 FCMT299N60 onsemi fcmt299n60-d.pdf Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
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FCMT299N60 FCMT299N60 onsemi fcmt299n60-d.pdf Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 8313 Stücke:
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FCMT299N60 FCMT299N60 onsemi fcmt299n60-d.pdf Description: MOSFET N-CH 600V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 6000 Stücke:
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FCMT299N60 FCMT299N60 onsemi / Fairchild fcmt299n60-d.pdf MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 234 Stücke:
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FCP099N60E FCP099N60E onsemi / Fairchild FCP099N60E_D-1805606.pdf MOSFETs SuperFET2 600V Slow version
auf Bestellung 1123 Stücke:
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1+8.85 EUR
10+8.76 EUR
50+5.42 EUR
100+5.02 EUR
250+5.00 EUR
500+4.86 EUR
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FCP099N60E FCP099N60E onsemi fcp099n60e-d.pdf Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V
auf Bestellung 375 Stücke:
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FCP9N60N FCP9N60N Fairchild Semiconductor FAIRS46032-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 25380 Stücke:
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FCPF9N60NT FCPF9N60NT Fairchild Semiconductor FAIRS46032-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1700 Stücke:
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FQAF19N60 FQAF19N60 Fairchild Semiconductor FAIRS07068-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 681 Stücke:
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IRFB9N60APBF IRFB9N60APBF VISHAY IRFB9N60APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 1047 Stücke:
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IRFB9N60APBF IRFB9N60APBF VISHAY IRFB9N60APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1047 Stücke:
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IRFB9N60APBF IRFB9N60APBF Vishay Semiconductors 91103.pdf MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 1798 Stücke:
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IRFB9N60APBF-BE3 IRFB9N60APBF-BE3 Vishay / Siliconix 91103.pdf MOSFETs TO220 600V 9.2A N-CH MOSFET
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IRFB9N60APBF-BE3 IRFB9N60APBF-BE3 Vishay Siliconix 91103.pdf Description: MOSFET N-CH 600V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 14 Stücke:
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3+6.34 EUR
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IRFS9N60APBF IRFS9N60APBF VISHAY IRFS9N60A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 148 Stücke:
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18+4.20 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 18
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IRFS9N60APBF IRFS9N60APBF VISHAY IRFS9N60A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.20 EUR
37+1.96 EUR
39+1.86 EUR
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IRFS9N60APBF IRFS9N60APBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 188 Stücke:
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IRFS9N60APBF IRFS9N60APBF Vishay Semiconductors sihs9n60.pdf MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 1611 Stücke:
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IRFS9N60ATRLPBF IRFS9N60ATRLPBF Vishay Semiconductors sihs9n60.pdf MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 682 Stücke:
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10+4.33 EUR
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100+3.27 EUR
250+3.15 EUR
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800+2.71 EUR
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IRFS9N60ATRLPBF IRFS9N60ATRLPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 950 Stücke:
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10+5.10 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Semiconductors sihs9n60.pdf MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.53 EUR
10+4.72 EUR
25+4.21 EUR
100+3.59 EUR
250+3.34 EUR
500+2.82 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.74 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 875 Stücke:
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3+7.71 EUR
10+5.10 EUR
100+3.62 EUR
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IRFSL9N60APBF IRFSL9N60APBF Vishay Siliconix sihsl9n6.pdf Description: MOSFET N-CH 600V 9.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 900 Stücke:
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MCW099N60SH-BP MCW099N60SH-BP Micro Commercial Components (MCC) MCW099N60SH_TO_247_-3536279.pdf MOSFETs N-CHANNEL MOSFET,TO-247
auf Bestellung 360 Stücke:
Lieferzeit 164-168 Tag (e)
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NTHL019N60S5F NTHL019N60S5F onsemi nthl019n60s5f-d.pdf Description: SUPERFET5 FRFET, 19MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A,10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 15.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 400 V
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NTHL019N60S5F NTHL019N60S5F onsemi nthl019n60s5f-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET V, FRFET, 600 V, 75 A, 19 mohm, TO-247
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NTHL099N60S5 NTHL099N60S5 onsemi nthl099n60s5-d.pdf Description: NTHL099N60S5
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V
auf Bestellung 244 Stücke:
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NTHL099N60S5 NTHL099N60S5 onsemi nthl099n60s5-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET V, Easy Drive, 600 V, 33 A, 99 mohm, TO-247
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PJMF099N60EC_T0_00601 PJMF099N60EC_T0_00601 Panjit PJMF099N60EC-3385789.pdf MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
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PJMF099N60EC_T0_00601 PJMF099N60EC_T0_00601 Panjit International Inc. PJMF099N60EC.pdf Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 1993 Stücke:
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PJMH099N60EC_T0_00601 PJMH099N60EC_T0_00601 Panjit International Inc. PJMH099N60EC.pdf Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
auf Bestellung 1500 Stücke:
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PJMH099N60EC_T0_00601 PJMH099N60EC_T0_00601 Panjit PJMH099N60EC-3472440.pdf MOSFETs 600V/ 99mohms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 840 Stücke:
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30+8.34 EUR
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270+6.74 EUR
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1020+5.44 EUR
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PJMP099N60EC_T0_00601 PJMP099N60EC_T0_00601 Panjit International Inc. PJMP099N60EC.pdf Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
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PJMP099N60EC_T0_00601 PJMP099N60EC_T0_00601 Panjit PJMP099N60EC-3385796.pdf MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1997 Stücke:
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SIHD9N60E-GE3 SIHD9N60E-GE3 Vishay Semiconductors sihd9n60e.pdf MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2685 Stücke:
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250+1.67 EUR
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1000+1.44 EUR
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SIHFS9N60A-GE3 SIHFS9N60A-GE3 Vishay / Siliconix sihs9n60.pdf MOSFETs 600V Vds TO-263 D2PAK
auf Bestellung 850 Stücke:
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SIHG039N60E-GE3 SIHG039N60E-GE3 Vishay Siliconix sihg039n60e.pdf Description: MOSFET N-CH 600V 63A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V
auf Bestellung 500 Stücke:
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500+9.41 EUR
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SIHG039N60E-GE3 SIHG039N60E-GE3 Vishay Semiconductors sihg039n60e.pdf MOSFETs 650V Vds; 30V Vgs TO-247AC
auf Bestellung 1710 Stücke:
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100+10.05 EUR
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500+9.70 EUR
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SIHG039N60EF-GE3 SIHG039N60EF-GE3 Vishay Siliconix sihg039n60ef.pdf Description: MOSFET N-CH 600V 61A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
auf Bestellung 435 Stücke:
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SIHG039N60EF-GE3 SIHG039N60EF-GE3 Vishay / Siliconix sihg039n60ef.pdf MOSFETs TO247 600V 61A N-CH MOSFET
auf Bestellung 486 Stücke:
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STD9N60M2 STD9N60M2 STMicroelectronics std9n60m2-1850599.pdf MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 2641 Stücke:
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3630 Stücke:
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6+2.97 EUR
10+1.88 EUR
100+1.26 EUR
500+1.00 EUR
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+0.82 EUR
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STF9N60M2 STF9N60M2 STMicroelectronics stf9n60m2-1850689.pdf MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 2911 Stücke:
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2+2.29 EUR
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100+1.13 EUR
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1000+0.95 EUR
2000+0.90 EUR
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STF9N60M2 STF9N60M2 STMicroelectronics en.DM00086741.pdf Description: MOSFET N-CH 600V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1972 Stücke:
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6+3.34 EUR
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100+1.44 EUR
500+1.14 EUR
1000+1.05 EUR
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STL19N60M6 STL19N60M6 STMicroelectronics en.DM00671637.pdf Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 3000 Stücke:
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3000+2.43 EUR
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STL19N60M6 STL19N60M6 STMicroelectronics en.DM00671637.pdf Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
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STL9N60M2 STL9N60M2 STMicroelectronics en.DM00102384.pdf Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1050 Stücke:
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5+4.08 EUR
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100+1.79 EUR
500+1.44 EUR
1000+1.32 EUR
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STL9N60M2 STL9N60M2 STMicroelectronics stl9n60m2-1850962.pdf MOSFETs N-channel 600 V, 0.76 Ohm typ 4.8 A MDmesh M2 Power MOSFET
auf Bestellung 2980 Stücke:
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1+3.26 EUR
10+2.20 EUR
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250+1.46 EUR
500+1.40 EUR
1000+1.24 EUR
3000+1.19 EUR
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STP9N60M2 STP9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 10 Stücke:
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6+3.22 EUR
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STU9N60M2 STU9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1773 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
75+1.41 EUR
150+1.27 EUR
525+1.06 EUR
1050+0.97 EUR
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STU9N60M2 STU9N60M2 STMicroelectronics std9n60m2-1850599.pdf MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.06 EUR
10+1.38 EUR
100+1.24 EUR
500+1.03 EUR
1000+0.88 EUR
3000+0.83 EUR
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TK39N60W,S1VF TK39N60W,S1VF Toshiba Semiconductor and Storage TK39N60W_datasheet_en_20131226.pdf?did=13613&prodName=TK39N60W Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.24 EUR
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TK39N60W,S1VF TK39N60W,S1VF Toshiba TK39N60W_datasheet_en_20131226-1140096.pdf MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.16 EUR
30+5.77 EUR
120+4.82 EUR
510+4.29 EUR
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TK39N60W5,S1VF TK39N60W5,S1VF Toshiba Semiconductor and Storage TK39N60W5_datasheet_en_20140225.pdf?did=14536&prodName=TK39N60W5 Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 1818 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.90 EUR
30+6.86 EUR
120+5.75 EUR
510+5.10 EUR
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IRFS9N60A
Produktcode: 77974
zu Favoriten hinzufügen Lieblingsprodukt

irfs9n60a_datasheet.pdf
IRFS9N60A
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263)
Uds,V: 600
Idd,A: 05.08.2015
Rds(on), Ohm: 0.75
Ciss, pF/Qg, nC: 1400/49
JHGF: SMD
verfügbar: 4 Stück
Anzahl Preis
1+0.70 EUR
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 15695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.05 EUR
10+6.74 EUR
100+4.86 EUR
500+4.07 EUR
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Hersteller: onsemi / Fairchild
MOSFETs 199mohm 600V SuperFET2
auf Bestellung 5569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.13 EUR
10+6.27 EUR
100+4.61 EUR
500+4.19 EUR
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+4.07 EUR
Mindestbestellmenge: 3000
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FCMT299N60 fcmt299n60-d.pdf
FCMT299N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 8390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.52 EUR
10+5.66 EUR
100+4.05 EUR
500+3.36 EUR
1000+3.26 EUR
Mindestbestellmenge: 3
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FCMT299N60 fcmt299n60-d.pdf
FCMT299N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 8313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.78 EUR
10+5.84 EUR
100+4.17 EUR
500+3.46 EUR
1000+3.26 EUR
Mindestbestellmenge: 3
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FCMT299N60 fcmt299n60-d.pdf
FCMT299N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.26 EUR
Mindestbestellmenge: 3000
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FCMT299N60 fcmt299n60-d.pdf
FCMT299N60
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.71 EUR
10+5.26 EUR
100+3.84 EUR
500+3.36 EUR
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FCP099N60E FCP099N60E_D-1805606.pdf
FCP099N60E
Hersteller: onsemi / Fairchild
MOSFETs SuperFET2 600V Slow version
auf Bestellung 1123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.85 EUR
10+8.76 EUR
50+5.42 EUR
100+5.02 EUR
250+5.00 EUR
500+4.86 EUR
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FCP099N60E fcp099n60e-d.pdf
FCP099N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.21 EUR
50+6.00 EUR
100+5.50 EUR
Mindestbestellmenge: 2
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FCP9N60N FAIRS46032-1.pdf?t.download=true&u=5oefqw
FCP9N60N
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 25380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.84 EUR
Mindestbestellmenge: 179
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FCPF9N60NT FAIRS46032-1.pdf?t.download=true&u=5oefqw
FCPF9N60NT
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
217+2.33 EUR
Mindestbestellmenge: 217
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FQAF19N60 FAIRS07068-1.pdf?t.download=true&u=5oefqw
FQAF19N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 11.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
114+4.47 EUR
Mindestbestellmenge: 114
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IRFB9N60APBF IRFB9N60APBF.pdf
IRFB9N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
36+2.03 EUR
44+1.66 EUR
46+1.56 EUR
100+1.50 EUR
Mindestbestellmenge: 26
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IRFB9N60APBF IRFB9N60APBF.pdf
IRFB9N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1047 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.79 EUR
36+2.03 EUR
44+1.66 EUR
46+1.56 EUR
100+1.50 EUR
Mindestbestellmenge: 26
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IRFB9N60APBF 91103.pdf
IRFB9N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.41 EUR
10+3.24 EUR
100+2.94 EUR
500+2.41 EUR
1000+2.24 EUR
2000+2.08 EUR
5000+2.04 EUR
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IRFB9N60APBF-BE3 91103.pdf
IRFB9N60APBF-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.88 EUR
10+3.06 EUR
100+2.94 EUR
500+2.46 EUR
1000+2.13 EUR
2000+2.08 EUR
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IRFB9N60APBF-BE3 91103.pdf
IRFB9N60APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
Mindestbestellmenge: 3
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IRFS9N60APBF IRFS9N60A.pdf
IRFS9N60APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.20 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 18
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IRFS9N60APBF IRFS9N60A.pdf
IRFS9N60APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.8A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.20 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRFS9N60APBF sihs9n60.pdf
IRFS9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
50+3.98 EUR
100+3.62 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRFS9N60APBF sihs9n60.pdf
IRFS9N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 1611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.49 EUR
10+4.40 EUR
25+2.73 EUR
1000+2.71 EUR
5000+2.64 EUR
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IRFS9N60ATRLPBF sihs9n60.pdf
IRFS9N60ATRLPBF
Hersteller: Vishay Semiconductors
MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.16 EUR
10+4.33 EUR
25+4.14 EUR
100+3.27 EUR
250+3.15 EUR
500+3.06 EUR
800+2.71 EUR
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IRFS9N60ATRLPBF sihs9n60.pdf
IRFS9N60ATRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+5.10 EUR
100+3.62 EUR
Mindestbestellmenge: 3
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IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Semiconductors
MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.53 EUR
10+4.72 EUR
25+4.21 EUR
100+3.59 EUR
250+3.34 EUR
500+2.82 EUR
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IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.74 EUR
Mindestbestellmenge: 800
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IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+5.10 EUR
100+3.62 EUR
Mindestbestellmenge: 3
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IRFSL9N60APBF sihsl9n6.pdf
IRFSL9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
50+3.29 EUR
100+2.98 EUR
500+2.44 EUR
Mindestbestellmenge: 3
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MCW099N60SH-BP MCW099N60SH_TO_247_-3536279.pdf
MCW099N60SH-BP
Hersteller: Micro Commercial Components (MCC)
MOSFETs N-CHANNEL MOSFET,TO-247
auf Bestellung 360 Stücke:
Lieferzeit 164-168 Tag (e)
Anzahl Preis
1+7.39 EUR
10+5.53 EUR
25+4.91 EUR
100+4.28 EUR
250+4.01 EUR
1800+4.00 EUR
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NTHL019N60S5F nthl019n60s5f-d.pdf
NTHL019N60S5F
Hersteller: onsemi
Description: SUPERFET5 FRFET, 19MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A,10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 15.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 400 V
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.27 EUR
10+20.07 EUR
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NTHL019N60S5F nthl019n60s5f-d.pdf
NTHL019N60S5F
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET V, FRFET, 600 V, 75 A, 19 mohm, TO-247
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.72 EUR
10+21.82 EUR
30+21.65 EUR
510+16.26 EUR
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NTHL099N60S5 nthl099n60s5-d.pdf
NTHL099N60S5
Hersteller: onsemi
Description: NTHL099N60S5
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.90 EUR
10+8.61 EUR
30+7.30 EUR
120+6.09 EUR
Mindestbestellmenge: 2
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NTHL099N60S5 nthl099n60s5-d.pdf
NTHL099N60S5
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET V, Easy Drive, 600 V, 33 A, 99 mohm, TO-247
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.11 EUR
10+8.20 EUR
30+7.00 EUR
120+5.97 EUR
270+5.54 EUR
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PJMF099N60EC_T0_00601 PJMF099N60EC-3385789.pdf
PJMF099N60EC_T0_00601
Hersteller: Panjit
MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.16 EUR
10+12.88 EUR
50+7.69 EUR
100+7.15 EUR
500+6.81 EUR
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
PJMF099N60EC_T0_00601
Hersteller: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.32 EUR
50+6.89 EUR
Mindestbestellmenge: 2
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PJMH099N60EC_T0_00601 PJMH099N60EC.pdf
PJMH099N60EC_T0_00601
Hersteller: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
30+6.92 EUR
120+5.80 EUR
510+4.97 EUR
1020+4.96 EUR
Mindestbestellmenge: 2
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PJMH099N60EC_T0_00601 PJMH099N60EC-3472440.pdf
PJMH099N60EC_T0_00601
Hersteller: Panjit
MOSFETs 600V/ 99mohms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.54 EUR
10+8.85 EUR
30+8.34 EUR
120+7.15 EUR
270+6.74 EUR
510+6.35 EUR
1020+5.44 EUR
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PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
PJMP099N60EC_T0_00601
Hersteller: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.13 EUR
50+6.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PJMP099N60EC_T0_00601 PJMP099N60EC-3385796.pdf
PJMP099N60EC_T0_00601
Hersteller: Panjit
MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.92 EUR
10+12.41 EUR
50+7.53 EUR
100+7.09 EUR
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SIHD9N60E-GE3 sihd9n60e.pdf
SIHD9N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.52 EUR
10+2.53 EUR
100+1.94 EUR
250+1.67 EUR
500+1.60 EUR
1000+1.44 EUR
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SIHFS9N60A-GE3 sihs9n60.pdf
SIHFS9N60A-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds TO-263 D2PAK
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.45 EUR
10+2.85 EUR
100+2.29 EUR
250+2.11 EUR
500+1.92 EUR
1000+1.66 EUR
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SIHG039N60E-GE3 sihg039n60e.pdf
SIHG039N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 63A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.55 EUR
25+11.98 EUR
100+10.18 EUR
500+9.41 EUR
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SIHG039N60E-GE3 sihg039n60e.pdf
SIHG039N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 650V Vds; 30V Vgs TO-247AC
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.22 EUR
10+18.64 EUR
25+11.33 EUR
100+10.05 EUR
250+9.89 EUR
500+9.70 EUR
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SIHG039N60EF-GE3 sihg039n60ef.pdf
SIHG039N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 61A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.02 EUR
10+11.87 EUR
100+10.51 EUR
Mindestbestellmenge: 2
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SIHG039N60EF-GE3 sihg039n60ef.pdf
SIHG039N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 600V 61A N-CH MOSFET
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.86 EUR
10+11.76 EUR
100+11.00 EUR
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STD9N60M2 std9n60m2-1850599.pdf
STD9N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 2641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.27 EUR
10+1.59 EUR
100+1.24 EUR
500+0.99 EUR
1000+0.86 EUR
2500+0.78 EUR
5000+0.76 EUR
Mindestbestellmenge: 2
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.88 EUR
100+1.26 EUR
500+1.00 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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STF9N60M2 stf9n60m2-1850689.pdf
STF9N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 2911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.29 EUR
10+1.45 EUR
100+1.13 EUR
500+0.99 EUR
1000+0.95 EUR
2000+0.90 EUR
Mindestbestellmenge: 2
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STF9N60M2 en.DM00086741.pdf
STF9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.13 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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STL19N60M6 en.DM00671637.pdf
STL19N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.43 EUR
Mindestbestellmenge: 3000
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STL19N60M6 en.DM00671637.pdf
STL19N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.06 EUR
10+4.65 EUR
100+3.28 EUR
500+2.69 EUR
1000+2.50 EUR
Mindestbestellmenge: 3
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STL9N60M2 en.DM00102384.pdf
STL9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.63 EUR
100+1.79 EUR
500+1.44 EUR
1000+1.32 EUR
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STL9N60M2 stl9n60m2-1850962.pdf
STL9N60M2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.76 Ohm typ 4.8 A MDmesh M2 Power MOSFET
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.26 EUR
10+2.20 EUR
100+1.69 EUR
250+1.46 EUR
500+1.40 EUR
1000+1.24 EUR
3000+1.19 EUR
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STP9N60M2 en.DM00080324.pdf
STP9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 10 Stücke:
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Anzahl Preis
6+3.22 EUR
Mindestbestellmenge: 6
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STU9N60M2 en.DM00080324.pdf
STU9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
75+1.41 EUR
150+1.27 EUR
525+1.06 EUR
1050+0.97 EUR
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STU9N60M2 std9n60m2-1850599.pdf
STU9N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.06 EUR
10+1.38 EUR
100+1.24 EUR
500+1.03 EUR
1000+0.88 EUR
3000+0.83 EUR
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TK39N60W,S1VF TK39N60W_datasheet_en_20131226.pdf?did=13613&prodName=TK39N60W
TK39N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.24 EUR
Mindestbestellmenge: 2
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TK39N60W,S1VF TK39N60W_datasheet_en_20131226-1140096.pdf
TK39N60W,S1VF
Hersteller: Toshiba
MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.16 EUR
30+5.77 EUR
120+4.82 EUR
510+4.29 EUR
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TK39N60W5,S1VF TK39N60W5_datasheet_en_20140225.pdf?did=14536&prodName=TK39N60W5
TK39N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 1818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.90 EUR
30+6.86 EUR
120+5.75 EUR
510+5.10 EUR
Mindestbestellmenge: 2
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