Dioden, Diodenbrücken, Zenerdioden > Schottkydioden
Gehäuse: SOT-227B
Sperrspannung Vrrm, V: 200 V
Durchlassstrom (per leg) If, A: 120 A
Durchlassspannung Vf, V: 1,06 V
Bemerkung: Zwei unabhängige Dioden
Stoßstrom Ifsm, A: 1000 A

Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SOT227

Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SOT227

Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-5-SOT227

Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-5-SOT227

Hersteller: Microchip Technology
Rectifiers FRED D 400 V 100 A Dual Parallel SOT-227

Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V

Hersteller: Microchip Technology
Rectifiers FRED DQ 1200 V 60 A Dual Parallel SOT-227

Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Pulsed drain current: 520A
Power dissipation: 700W
Polarisation: unipolar
Technology: POWER MOS V®
Drain current: 130A
Kind of channel: enhancement
Drain-source voltage: 300V
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 19mΩ

Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Pulsed drain current: 176A
Power dissipation: 450W
Polarisation: unipolar
Technology: POWER MOS 5®
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.1Ω

Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-7-SOT227

Hersteller: Microchip Technology
Bridge Rectifiers PM-DIODE-FRED-D-SOT227

Hersteller: Microsemi
IGBT 1200V 128A 543W SOT227 Транзистори

Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SOT227

Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SOT227

Hersteller: Ohmite
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active

Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V

Hersteller: IXYS
Description: DIODE MOD GP 1200V 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V

Hersteller: IXYS
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V

Hersteller: IXYS
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V

Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS

Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 198A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V

NPT2 IGBT (Ic25=100 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори

Hersteller: IXYS
Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 650V 145A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V

SOT-227B, HiPerFET, N-Channel MOSFET, Id=180A, Vdss=200V, -55...+150 Транзистори

Hersteller: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 600V 72A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Hersteller: IXYS
IGBTs SOT227 1200V 110A GENX4

Hersteller: IXYS
IGBTs SOT227 1200V 140A XPT

Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; SiC diode/transistor; 1.7kV; 40A; SOT227; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SOT227
Electrical mounting: screw
Mechanical mounting: screw
Pulsed drain current: 200A
Power dissipation: 270W
Technology: SiC
Drain current: 40A
Drain-source voltage: 1.7kV
Kind of package: tube
On-state resistance: 45mΩ
Manufacturer standard package: 10pcs.

Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227

Hersteller: Microchip Technology
Diode Modules PM-DIODE-SIC-SBD-SOT227

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 mOhms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 500 mOhms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 10 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 10 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 1 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 1 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 200 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 20 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 20 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 2 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 50 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 50 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 5 Ohms

Hersteller: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 41A x2
Case: SOT227
Max. forward impulse current: 245A
Electrical mounting: screw
Max. load current: 82A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: bulk

Hersteller: SIRECTIFIER
Category: Triacs
Description: Triac; 1.2kV; 70A; Igt: 50mA; SOT227; bulk; Ifsm: 750A
Max. off-state voltage: 1.2kV
Case: SOT227
Max. forward impulse current: 750A
Max. load current: 70A
Kind of package: bulk
Typ of triac: standard
Mounting: screw
Gate current: 50mA

Hersteller: SMC Diode Solutions
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V

Hersteller: SMC Diode Solutions
Description: DIODE MOD SCHOT 150V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V