Suchergebnisse für "sot227" : > 60

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APL502J APL502J Microchip Technology APL501J_D_Linear_MOSFET_Datasheet.pdf MOSFET Modules MOSFET Linear 500 V 52 A SOT-227
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APT20M22JVR Microchip Technology APT20M11JLL_D.pdf MOSFET Modules MOSFET MOS 5 200 V 22 mOhm SOT-227
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APT2X100DQ100J APT2X100DQ100J Microchip Technology APT15D100BCT(G)_B.pdf Rectifiers FRED DQ 1000 V 100 A Dual Anti-Parallel SOT-227
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APT2X30DQ60J APT2X30DQ60J Microchip Technology APT15D60B_G__H.pdf Rectifiers FRED DQ 600 V 30 A Dual Anti-Parallel SOT-227
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APT2X31D20J APT2X31D20J Microchip Technology Microsemi_APT2X101_100D20J_Ultrafast_Soft_Recovery_Rectifier_Diode_E.pdf Rectifiers FRED D 200 V 30 A Dual Parallel SOT-227
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APT2X31D40J APT2X31D40J Microchip Technology APT15D40BCT_G__E.pdf Rectifiers FRED D 400 V 30 A Dual Parallel SOT-227
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APT2X31S20J APT2X31S20J Microchip Technology APT2X31S20J_C.pdf Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 681 Stücke:
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APT30M40JVR APT30M40JVR Microchip Technology APT30M19JVR_B.pdf MOSFET Modules MOSFET MOS 5 300 V 40 mOhm SOT-227
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APT50M50JFLL Microchip Technology APT100F50J_C.pdf MOSFET Modules FREDFET MOS 7 500 V 50 mOhm SOT-227
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APT75GP120JDQ3 APT75GP120JDQ3 Microchip Technology APT13GP120BDQ1G_MOS7_PT_IGBT_w_DQ_Diode_Datasheet.pdf IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
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APT75GP120JDQ3 Microsemi APT75GP120JDQ3_A.pdf IGBT 1200V 128A 543W SOT227 Транзистори
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APT8030JVFR Microchip Technology APT8030JVFR_B.pdf MOSFET Modules FREDFET MOS 5 800 V 300 mOhm SOT-227
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APT80M60J Microchip Technology APL602B2_L(G)_E.pdf MOSFET Modules MOSFET MOS 8 600 V 80 A SOT-227
auf Bestellung 9 Stücke:
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APT85GR120J APT85GR120J Microchip Technology APT100GT120JR_B.pdf IGBTs IGBT MOS 8 1200 V 85 A SOT-227
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C40-058-AE C40-058-AE Ohmite sink-c40.pdf Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
auf Bestellung 2919 Stücke:
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560+10.58 EUR
1120+10.2 EUR
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DH2x61-18A DH2x61-18A IXYS Littelfuse-Power-Semiconductors-DH2x61-18A-Datasheet?assetguid=145808c1-d7b3-48b1-bcbe-f9e09603d296 Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
auf Bestellung 215 Stücke:
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DSEI2X101-06A DSEI2X101-06A IXYS Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet?assetguid=480047e3-30ec-4e0b-b058-787e0545fd19 Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 1076 Stücke:
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DSEI2X31-12B DSEI2X31-12B IXYS littelfuse-power-semiconductors-dsei2x31-12b-datasheet?assetguid=ee481cfe-0348-4b51-bb49-6f08b9d0ed4e description Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
auf Bestellung 6036 Stücke:
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DSEI2X61-06C DSEI2X61-06C IXYS 238_DSEI2x61-04C_DSEI2x61-06C.pdf Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 630 Stücke:
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GB2X50MPS12-227 GB2X50MPS12-227 GeneSiC Semiconductor GB2X50MPS12-227.pdf SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS
auf Bestellung 1742 Stücke:
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GD2X60MPS06N GD2X60MPS06N GeneSiC Semiconductor GD2X60MPS06N.pdf SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS
auf Bestellung 251 Stücke:
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GHXS060A120S-D3 GHXS060A120S-D3 SemiQ GHXS060A120S-D3.pdf Diode Modules 1200V, 60A, SOT-227 diode module
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IXEN60N120 IXEN60N120 IXEN60N120D1%28D1%29.pdf NPT2 IGBT (Ic25=100 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори
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IXFN100N50P IXFN100N50P IXYS IXFN100N50P.pdf description Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 237 Stücke:
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IXFN132N50P3 IXFN132N50P3 IXYS DS100316BIXFN132N50P3.pdf Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 2237 Stücke:
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IXFN140N20P IXFN140N20P IXYS littelfuse-discrete-mosfets-ixfn140n20p-datasheet?assetguid=7945f9e3-6e8f-4a50-a3b4-349170f8bf7b description Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 739 Stücke:
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IXFN180N20 IXFN180N20 IXFN180N20.pdf description SOT-227B, HiPerFET, N-Channel MOSFET, Id=180A, Vdss=200V, -55...+150 Транзистори
auf Bestellung 176 Stücke:
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IXFN360N10T IXFN360N10T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 3344 Stücke:
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IXFN400N15X3 IXFN400N15X3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXFN400N15X3_Datasheet.PDF MOSFET Modules MBLOC 150V 400A N-CH X3CLASS
auf Bestellung 557 Stücke:
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IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 729 Stücke:
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IXGN200N170 IXGN200N170 IXYS Littelfuse_Discrete_IGBTs_NPT_IXGN200N170_Datasheet.PDF IGBTs SOT227 1700V 160A IGBT
auf Bestellung 360 Stücke:
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IXGN400N60B3 IXGN400N60B3 IXYS Littelfuse_Discrete_IGBTs_PT_IXGN400N60B3_Datasheet.PDF IGBT Modules Mid-Frequency Range PT IGBTs
auf Bestellung 450 Stücke:
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IXTN200N10L2 IXTN200N10L2 IXYS DS100238IXTN200N10L2.pdf Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 2680 Stücke:
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IXTN400N15X4 IXTN400N15X4 IXYS littelfuse_discrete_mosfets_n_channel_ultra_junction_ixtn400n15x4_datasheet.PDF MOSFET Modules MBLOC 150V 400A N-CH X4CLASS
auf Bestellung 408 Stücke:
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IXTN500N20X4 IXTN500N20X4 IXYS ixtn500n20x4-datasheet?assetguid=4bd1ad75-1294-42a5-9dc5-05bb88ff6c2a Description: Ultra Junction X4-Class Power
Power Dissipation (Max): 1150W (Tc)
Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B - miniBLOC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
auf Bestellung 457 Stücke:
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IXTN600N04T2 IXTN600N04T2 IXYS littelfuse-discrete-mosfets-ixtn600n04t2-datasheet?assetguid=ce9fe6c5-553e-48d1-b7ff-931b370a3ea5 Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
auf Bestellung 1769 Stücke:
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IXTN60N50L2 IXTN60N50L2 IXYS DS100086AIXTN60N50L2.pdf Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 1689 Stücke:
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IXTN90N25L2 IXTN90N25L2 IXYS littelfuse-discrete-mosfets-ixtn90n25-datasheet?assetguid=22138b57-480b-473e-a2e8-a7af15dabfda Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 644 Stücke:
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS Littelfuse_Discrete_IGBTs_XPT_IXXN110N65C4H1_Datasheet.PDF IGBT Modules 650V/234A Trench IGBT GenX4 XPT
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IXYN140N120A4 IXYN140N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyn140n120a4_datasheet.pdf IGBTs SOT227 1200V 140A XPT
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MSC025SMA120J MSC025SMA120J Microchip Technology MSC025SMA120J-SiC-MOSFET-Datasheet.pdf MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227
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MSC080SMA120J MSC080SMA120J Microchip Technology MSC080SMA120B_SiC_MOSFET_Datasheet.pdf MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227
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MSC2X51SDA070J MSC2X51SDA070J Microchip Technology Microsemi_MSC2X51_50SDA070J_Dual_SiC_Schottky_Barrier_Diode_A.pdf Diode Modules SIC SBD 700 V 50 A Dual Parallel SOT-227
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10+74.57 EUR
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100+68.23 EUR
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MUR2X060A02 MUR2X060A02 GeneSiC Semiconductor mur2x060a02.pdf Diode Modules 200V 120A Fwd Super Fast Recovery
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PF2272-0R1J1 PF2272-0R1J1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 0.1 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 mOhms
auf Bestellung 107 Stücke:
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20+44.84 EUR
40+41.48 EUR
60+39.75 EUR
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PF2272-0R2J1 PF2272-0R2J1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 0.2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 mOhms
auf Bestellung 385 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.33 EUR
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40+40.59 EUR
60+38.89 EUR
100+36.97 EUR
260+33.95 EUR
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PF2272-0R5J1 PF2272-0R5J1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 0.5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 500 mOhms
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.91 EUR
20+44.3 EUR
40+40.97 EUR
60+39.26 EUR
100+37.32 EUR
260+34.27 EUR
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PF2272-100RJ1 PF2272-100RJ1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 100 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 Ohms
auf Bestellung 793 Stücke:
Lieferzeit 10-14 Tag (e)
1+65.14 EUR
20+43.07 EUR
40+39.82 EUR
60+38.15 EUR
100+36.26 EUR
260+33.28 EUR
500+31.61 EUR
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PF2272-10RJ1 PF2272-10RJ1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 10 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 10 Ohms
auf Bestellung 1234 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.72 EUR
20+44.17 EUR
40+40.84 EUR
60+39.14 EUR
100+37.21 EUR
260+34.16 EUR
500+32.45 EUR
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PF2272-200RJ1 PF2272-200RJ1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 200 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 Ohms
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.27 EUR
20+43.85 EUR
40+40.56 EUR
60+38.87 EUR
100+36.94 EUR
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PF2272-20RJ1 PF2272-20RJ1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 20 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 20 Ohms
auf Bestellung 322 Stücke:
Lieferzeit 10-14 Tag (e)
1+65.97 EUR
20+43.65 EUR
40+40.36 EUR
60+38.68 EUR
100+36.76 EUR
260+33.75 EUR
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PF2272-2RJ1 PF2272-2RJ1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 2 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 2 Ohms
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.33 EUR
20+43.89 EUR
40+40.58 EUR
60+38.89 EUR
100+36.96 EUR
260+33.94 EUR
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PF2272-5RJ1 PF2272-5RJ1 Riedon products by Bourns pf2270.pdf?sfvrsn=aae82ef6_3 Description: RES CHAS MNT 5 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 5 Ohms
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.5 EUR
20+44.01 EUR
40+40.7 EUR
60+39 EUR
100+37.07 EUR
260+34.03 EUR
500+32.32 EUR
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S4D80120S2 S4D80120S2 SMC DIODE SOLUTIONS S4D80120S2.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 41A x2
Max. load current: 82A
Kind of package: bulk
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 245A
Type of semiconductor module: diode
auf Bestellung 18 Stücke:
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2+62.59 EUR
3+56.41 EUR
12+49.72 EUR
Mindestbestellmenge: 2 Stücke
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SK2S120-100 SK2S120-100 SMC Diode Solutions SK2S120-100%20N1745%20REV.A.pdf Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
auf Bestellung 851 Stücke:
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1+36.18 EUR
10+25.75 EUR
360+18.43 EUR
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SK2S200-150 SK2S200-150 SMC Diode Solutions SK2S200-150%20N1738%20REV.A.pdf Description: DIODE MOD SCHOT 150V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
auf Bestellung 945 Stücke:
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1+60.49 EUR
10+44.41 EUR
360+35.41 EUR
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STE53NC50 STE53NC50 STMicroelectronics STE53NC50-DTE.pdf Category: Transistor drivers
Description: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W
Polarisation: unipolar
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 33A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Kind of package: tube
Semiconductor structure: single transistor
Case: ISOTOP
On-state resistance: 70mΩ
Pulsed drain current: 212A
Type of semiconductor module: MOSFET transistor
Power dissipation: 460W
auf Bestellung 36 Stücke:
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2+47.48 EUR
5+40.73 EUR
10+39.1 EUR
20+37.56 EUR
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STE70NM60 STE70NM60 STMicroelectronics ste70nm60.pdf description Category: Transistor drivers
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Polarisation: unipolar
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 70A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Kind of package: tube
Semiconductor structure: single transistor
Case: ISOTOP
On-state resistance: 55mΩ
Pulsed drain current: 44A
Type of semiconductor module: MOSFET transistor
Power dissipation: 600W
auf Bestellung 5 Stücke:
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STGE200NB60S STGE200NB60S STMicroelectronics stge200nb60s.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Case: ISOTOP
Gate-emitter voltage: ±20V
Collector current: 150A
Type of semiconductor module: IGBT
Power dissipation: 600W
auf Bestellung 29 Stücke:
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3+31.55 EUR
5+28.94 EUR
10+27.57 EUR
20+27.18 EUR
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STPS12045TV STPS12045TV STMicroelectronics stps12045.pdf Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; ISOTOP; screw
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 45V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 120A
Semiconductor structure: double independent
Case: ISOTOP
Max. forward impulse current: 0.9kA
Max. forward voltage: 0.67V
Type of semiconductor module: diode
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
4+25.25 EUR
5+23.7 EUR
10+23.62 EUR
Mindestbestellmenge: 4 Stücke
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APL502J APL501J_D_Linear_MOSFET_Datasheet.pdf
APL502J
Hersteller: Microchip Technology
MOSFET Modules MOSFET Linear 500 V 52 A SOT-227
auf Bestellung 69 Stücke:
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AnzahlPrivatkunde
1+99.84 EUR
10+98.48 EUR
25+95.35 EUR
100+92.02 EUR
250+90.96 EUR
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APT20M22JVR APT20M11JLL_D.pdf
Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 5 200 V 22 mOhm SOT-227
auf Bestellung 498 Stücke:
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1+54.73 EUR
10+54.64 EUR
25+49.58 EUR
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APT2X100DQ100J APT15D100BCT(G)_B.pdf
APT2X100DQ100J
Hersteller: Microchip Technology
Rectifiers FRED DQ 1000 V 100 A Dual Anti-Parallel SOT-227
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AnzahlPrivatkunde
1+42.24 EUR
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APT2X30DQ60J APT15D60B_G__H.pdf
APT2X30DQ60J
Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 30 A Dual Anti-Parallel SOT-227
auf Bestellung 18 Stücke:
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AnzahlPrivatkunde
1+33.13 EUR
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APT2X31D20J Microsemi_APT2X101_100D20J_Ultrafast_Soft_Recovery_Rectifier_Diode_E.pdf
APT2X31D20J
Hersteller: Microchip Technology
Rectifiers FRED D 200 V 30 A Dual Parallel SOT-227
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AnzahlPrivatkunde
1+50.9 EUR
10+49.88 EUR
100+45.74 EUR
250+45.34 EUR
500+45.2 EUR
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APT2X31D40J APT15D40BCT_G__E.pdf
APT2X31D40J
Hersteller: Microchip Technology
Rectifiers FRED D 400 V 30 A Dual Parallel SOT-227
auf Bestellung 152 Stücke:
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1+34.33 EUR
10+34.09 EUR
25+31.61 EUR
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APT2X31S20J APT2X31S20J_C.pdf
APT2X31S20J
Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 681 Stücke:
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100+31.99 EUR
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APT30M40JVR APT30M19JVR_B.pdf
APT30M40JVR
Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 5 300 V 40 mOhm SOT-227
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1+64.68 EUR
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APT50M50JFLL APT100F50J_C.pdf
Hersteller: Microchip Technology
MOSFET Modules FREDFET MOS 7 500 V 50 mOhm SOT-227
auf Bestellung 45 Stücke:
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1+103.02 EUR
10+100.32 EUR
25+99.01 EUR
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APT75GP120JDQ3 APT13GP120BDQ1G_MOS7_PT_IGBT_w_DQ_Diode_Datasheet.pdf
APT75GP120JDQ3
Hersteller: Microchip Technology
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
auf Bestellung 1300 Stücke:
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1+84.55 EUR
10+78.62 EUR
25+76.64 EUR
100+71.69 EUR
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APT75GP120JDQ3 APT75GP120JDQ3_A.pdf
Hersteller: Microsemi
IGBT 1200V 128A 543W SOT227 Транзистори
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1+188.65 EUR
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APT8030JVFR APT8030JVFR_B.pdf
Hersteller: Microchip Technology
MOSFET Modules FREDFET MOS 5 800 V 300 mOhm SOT-227
auf Bestellung 74 Stücke:
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APT80M60J APL602B2_L(G)_E.pdf
Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 8 600 V 80 A SOT-227
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APT85GR120J APT100GT120JR_B.pdf
APT85GR120J
Hersteller: Microchip Technology
IGBTs IGBT MOS 8 1200 V 85 A SOT-227
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C40-058-AE sink-c40.pdf
C40-058-AE
Hersteller: Ohmite
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
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25+12.48 EUR
50+12.03 EUR
140+11.39 EUR
280+10.98 EUR
560+10.58 EUR
1120+10.2 EUR
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DH2x61-18A Littelfuse-Power-Semiconductors-DH2x61-18A-Datasheet?assetguid=145808c1-d7b3-48b1-bcbe-f9e09603d296
DH2x61-18A
Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
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DSEI2X101-06A Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet?assetguid=480047e3-30ec-4e0b-b058-787e0545fd19
DSEI2X101-06A
Hersteller: IXYS
Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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DSEI2X31-12B description littelfuse-power-semiconductors-dsei2x31-12b-datasheet?assetguid=ee481cfe-0348-4b51-bb49-6f08b9d0ed4e
DSEI2X31-12B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
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DSEI2X61-06C 238_DSEI2x61-04C_DSEI2x61-06C.pdf
DSEI2X61-06C
Hersteller: IXYS
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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GB2X50MPS12-227 GB2X50MPS12-227.pdf
GB2X50MPS12-227
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS
auf Bestellung 1742 Stücke:
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GD2X60MPS06N GD2X60MPS06N.pdf
GD2X60MPS06N
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS
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GHXS060A120S-D3 GHXS060A120S-D3.pdf
GHXS060A120S-D3
Hersteller: SemiQ
Diode Modules 1200V, 60A, SOT-227 diode module
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IXEN60N120 IXEN60N120D1%28D1%29.pdf
IXEN60N120
NPT2 IGBT (Ic25=100 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори
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IXFN100N50P description IXFN100N50P.pdf
IXFN100N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 237 Stücke:
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IXFN132N50P3 DS100316BIXFN132N50P3.pdf
IXFN132N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 2237 Stücke:
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IXFN140N20P description littelfuse-discrete-mosfets-ixfn140n20p-datasheet?assetguid=7945f9e3-6e8f-4a50-a3b4-349170f8bf7b
IXFN140N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 739 Stücke:
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IXFN180N20 description IXFN180N20.pdf
IXFN180N20
SOT-227B, HiPerFET, N-Channel MOSFET, Id=180A, Vdss=200V, -55...+150 Транзистори
auf Bestellung 176 Stücke:
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IXFN360N10T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB
IXFN360N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 3344 Stücke:
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IXFN400N15X3 Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXFN400N15X3_Datasheet.PDF
IXFN400N15X3
Hersteller: IXYS
MOSFET Modules MBLOC 150V 400A N-CH X3CLASS
auf Bestellung 557 Stücke:
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IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 729 Stücke:
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IXGN200N170 Littelfuse_Discrete_IGBTs_NPT_IXGN200N170_Datasheet.PDF
IXGN200N170
Hersteller: IXYS
IGBTs SOT227 1700V 160A IGBT
auf Bestellung 360 Stücke:
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1+148.29 EUR
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IXGN400N60B3 Littelfuse_Discrete_IGBTs_PT_IXGN400N60B3_Datasheet.PDF
IXGN400N60B3
Hersteller: IXYS
IGBT Modules Mid-Frequency Range PT IGBTs
auf Bestellung 450 Stücke:
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IXTN200N10L2 DS100238IXTN200N10L2.pdf
IXTN200N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 2680 Stücke:
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IXTN400N15X4 littelfuse_discrete_mosfets_n_channel_ultra_junction_ixtn400n15x4_datasheet.PDF
IXTN400N15X4
Hersteller: IXYS
MOSFET Modules MBLOC 150V 400A N-CH X4CLASS
auf Bestellung 408 Stücke:
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IXTN500N20X4 ixtn500n20x4-datasheet?assetguid=4bd1ad75-1294-42a5-9dc5-05bb88ff6c2a
IXTN500N20X4
Hersteller: IXYS
Description: Ultra Junction X4-Class Power
Power Dissipation (Max): 1150W (Tc)
Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B - miniBLOC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
auf Bestellung 457 Stücke:
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IXTN600N04T2 littelfuse-discrete-mosfets-ixtn600n04t2-datasheet?assetguid=ce9fe6c5-553e-48d1-b7ff-931b370a3ea5
IXTN600N04T2
Hersteller: IXYS
Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
auf Bestellung 1769 Stücke:
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IXTN60N50L2 DS100086AIXTN60N50L2.pdf
IXTN60N50L2
Hersteller: IXYS
Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 1689 Stücke:
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IXTN90N25L2 littelfuse-discrete-mosfets-ixtn90n25-datasheet?assetguid=22138b57-480b-473e-a2e8-a7af15dabfda
IXTN90N25L2
Hersteller: IXYS
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 644 Stücke:
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IXXN110N65C4H1 Littelfuse_Discrete_IGBTs_XPT_IXXN110N65C4H1_Datasheet.PDF
IXXN110N65C4H1
Hersteller: IXYS
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
auf Bestellung 834 Stücke:
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IXYN140N120A4 littelfuse_discrete_igbts_xpt_ixyn140n120a4_datasheet.pdf
IXYN140N120A4
Hersteller: IXYS
IGBTs SOT227 1200V 140A XPT
auf Bestellung 78 Stücke:
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MSC025SMA120J MSC025SMA120J-SiC-MOSFET-Datasheet.pdf
MSC025SMA120J
Hersteller: Microchip Technology
MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227
auf Bestellung 74 Stücke:
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1+85.68 EUR
10+81.79 EUR
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MSC080SMA120J MSC080SMA120B_SiC_MOSFET_Datasheet.pdf
MSC080SMA120J
Hersteller: Microchip Technology
MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227
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1+51.86 EUR
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MSC2X51SDA070J Microsemi_MSC2X51_50SDA070J_Dual_SiC_Schottky_Barrier_Diode_A.pdf
MSC2X51SDA070J
Hersteller: Microchip Technology
Diode Modules SIC SBD 700 V 50 A Dual Parallel SOT-227
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+86.01 EUR
10+74.57 EUR
30+72.97 EUR
100+68.23 EUR
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MUR2X060A02 mur2x060a02.pdf
MUR2X060A02
Hersteller: GeneSiC Semiconductor
Diode Modules 200V 120A Fwd Super Fast Recovery
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+85.13 EUR
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PF2272-0R1J1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-0R1J1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.1 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 mOhms
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+67.71 EUR
20+44.84 EUR
40+41.48 EUR
60+39.75 EUR
100+37.79 EUR
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PF2272-0R2J1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-0R2J1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 mOhms
auf Bestellung 385 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+66.33 EUR
20+43.89 EUR
40+40.59 EUR
60+38.89 EUR
100+36.97 EUR
260+33.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-0R5J1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-0R5J1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 500 mOhms
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+66.91 EUR
20+44.3 EUR
40+40.97 EUR
60+39.26 EUR
100+37.32 EUR
260+34.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-100RJ1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-100RJ1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 100 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 Ohms
auf Bestellung 793 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+65.14 EUR
20+43.07 EUR
40+39.82 EUR
60+38.15 EUR
100+36.26 EUR
260+33.28 EUR
500+31.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-10RJ1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-10RJ1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 10 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 10 Ohms
auf Bestellung 1234 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+66.72 EUR
20+44.17 EUR
40+40.84 EUR
60+39.14 EUR
100+37.21 EUR
260+34.16 EUR
500+32.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-200RJ1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-200RJ1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 200 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 Ohms
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+66.27 EUR
20+43.85 EUR
40+40.56 EUR
60+38.87 EUR
100+36.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-20RJ1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-20RJ1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 20 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 20 Ohms
auf Bestellung 322 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+65.97 EUR
20+43.65 EUR
40+40.36 EUR
60+38.68 EUR
100+36.76 EUR
260+33.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-2RJ1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-2RJ1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 2 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 2 Ohms
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+66.33 EUR
20+43.89 EUR
40+40.58 EUR
60+38.89 EUR
100+36.96 EUR
260+33.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PF2272-5RJ1 pf2270.pdf?sfvrsn=aae82ef6_3
PF2272-5RJ1
Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 5 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 5 Ohms
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+66.5 EUR
20+44.01 EUR
40+40.7 EUR
60+39 EUR
100+37.07 EUR
260+34.03 EUR
500+32.32 EUR
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S4D80120S2 S4D80120S2.pdf
S4D80120S2
Hersteller: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 41A x2
Max. load current: 82A
Kind of package: bulk
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 245A
Type of semiconductor module: diode
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+62.59 EUR
3+56.41 EUR
12+49.72 EUR
Mindestbestellmenge: 2 Stücke
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SK2S120-100 SK2S120-100%20N1745%20REV.A.pdf
SK2S120-100
Hersteller: SMC Diode Solutions
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.18 EUR
10+25.75 EUR
360+18.43 EUR
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SK2S200-150 SK2S200-150%20N1738%20REV.A.pdf
SK2S200-150
Hersteller: SMC Diode Solutions
Description: DIODE MOD SCHOT 150V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+60.49 EUR
10+44.41 EUR
360+35.41 EUR
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STE53NC50 STE53NC50-DTE.pdf
STE53NC50
Hersteller: STMicroelectronics
Category: Transistor drivers
Description: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W
Polarisation: unipolar
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 33A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Kind of package: tube
Semiconductor structure: single transistor
Case: ISOTOP
On-state resistance: 70mΩ
Pulsed drain current: 212A
Type of semiconductor module: MOSFET transistor
Power dissipation: 460W
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+47.48 EUR
5+40.73 EUR
10+39.1 EUR
20+37.56 EUR
Mindestbestellmenge: 2 Stücke
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STE70NM60 description ste70nm60.pdf
STE70NM60
Hersteller: STMicroelectronics
Category: Transistor drivers
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Polarisation: unipolar
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 70A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Kind of package: tube
Semiconductor structure: single transistor
Case: ISOTOP
On-state resistance: 55mΩ
Pulsed drain current: 44A
Type of semiconductor module: MOSFET transistor
Power dissipation: 600W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+60.38 EUR
Mindestbestellmenge: 2 Stücke
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STGE200NB60S stge200nb60s.pdf
STGE200NB60S
Hersteller: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Case: ISOTOP
Gate-emitter voltage: ±20V
Collector current: 150A
Type of semiconductor module: IGBT
Power dissipation: 600W
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+31.55 EUR
5+28.94 EUR
10+27.57 EUR
20+27.18 EUR
Mindestbestellmenge: 3 Stücke
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STPS12045TV stps12045.pdf
STPS12045TV
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; ISOTOP; screw
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 45V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 120A
Semiconductor structure: double independent
Case: ISOTOP
Max. forward impulse current: 0.9kA
Max. forward voltage: 0.67V
Type of semiconductor module: diode
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+25.25 EUR
5+23.7 EUR
10+23.62 EUR
Mindestbestellmenge: 4 Stücke
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