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IRU1206-33CD IRU1206-33CD
Produktcode: 83106
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IR datasheetcde8oeymfn98ey89dfy7w8edf.pdf IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C
verfügbar: 12 Stück
1+0.55 EUR
10+0.47 EUR
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APT100GLQ65JU3 APT100GLQ65JU3 Microchip Technology APT100GLQ65JU3_Rev0-3444875.pdf IGBT Modules PM-IGBT-TFS-SOT227
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25+45.44 EUR
100+43.16 EUR
250+43.07 EUR
500+43.03 EUR
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APT100GN120J APT100GN120J Microchip Technology APT100GN120B2_G__A_-3444799.pdf IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 100 A SOT-227
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APT2X101D40J APT2X101D40J Microchip Technology APT15D40BCT_G__E-3444524.pdf Rectifiers FRED D 400 V 100 A Dual Parallel SOT-227
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APT2X101DQ60J APT2X101DQ60J Microchip Technology APT15D60B_G__H-3444991.pdf Rectifiers FRED DQ 600 V 100 A Dual Parallel SOT-227
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APT2X30D120J APT2X30D120J Microchip Technology 6158-apt2x31d120j-apt2x30d120j-datasheet Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 257 Stücke:
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APT2X30DQ60J APT2X30DQ60J Microchip Technology APT15D60B_G__H-3444991.pdf Rectifiers FRED DQ 600 V 300 A Dual Anti-Parallel SOT-227
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APT2X31D30J APT2X31D30J Microchip Technology APT2X31_30D30J_B-3500207.pdf Rectifiers FRED D 300 V 310 A Dual Parallel SOT-227
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APT2X31D60J APT2X31D60J Microchip Technology APT15D60B_G__H-3444991.pdf Diode Modules FRED D 600 V 310 A Dual Parallel SOT-227
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APT2X31DQ60J APT2X31DQ60J Microchip Technology APT15D60B_G__H-3444991.pdf Rectifiers FRED DQ 600 V 310 A Dual Parallel SOT-227
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APT2X31S20J APT2X31S20J Microchip Technology 6162-apt2x31s20j-datasheet Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 472 Stücke:
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APT2X61D100J APT2X61D100J Microchip Technology APT15D100BCT_G__B-3444462.pdf Rectifiers FRED D 1000 V 610 A Dual Parallel SOT-227
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APT2X61DQ120J APT2X61DQ120J Microchip Technology APT2x61_60DQ120J_D-3500494.pdf Rectifiers FRED DQ 1200 V 610 A Dual Parallel SOT-227
auf Bestellung 1534 Stücke:
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APT30M19JVFR APT30M19JVFR MICROCHIP TECHNOLOGY APT30M19JVFR.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 520A
Power dissipation: 700W
Technology: POWER MOS V®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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APT5010JVR APT5010JVR MICROCHIP TECHNOLOGY 6293-apt5010jvr-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
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APT60GA60JD60 APT60GA60JD60 Microchip Technology 123665-apt60ga60jd60-d-datasheet Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
auf Bestellung 1258 Stücke:
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APT75GP120JDQ3 APT75GP120JDQ3 Microchip Technology APT13GP120BDQ1G_MOS7_PT_IGBT_w_DQ_Diode_Datasheet-3444365.pdf IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
auf Bestellung 2539 Stücke:
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C40-058-AE C40-058-AE Ohmite sink-c40.pdf Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
auf Bestellung 950 Stücke:
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DCG130X1200NA DCG130X1200NA IXYS media-3320767.pdf SiC Schottky Diodes SCHOTTKY DIODE SOT-227B-4
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DH2x61-18A DH2x61-18A IXYS media?resourcetype=datasheets&itemid=145808c1-d7b3-48b1-bcbe-f9e09603d296&filename=Littelfuse-Power-Semiconductors-DH2x61-18A-Datasheet Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
auf Bestellung 619 Stücke:
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DPF240X400NA DPF240X400NA IXYS media-3319269.pdf Rectifiers HiPerFRED
auf Bestellung 90 Stücke:
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DSEI2X101-06A DSEI2X101-06A IXYS media?resourcetype=datasheets&itemid=480047e3-30ec-4e0b-b058-787e0545fd19&filename=Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 386 Stücke:
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DSEI2X101-06A IXYS/Littelfuse media?resourcetype=datasheets&itemid=480047e3-30ec-4e0b-b058-787e0545fd19&filename=Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet 2 незалежних випрямних ультрашвидких епітаксіальних діоди на шасі; Uзвор, В = 600; Io, А = 96; Uf (max), В = 1,25; If, A = 100; I, мкА @ Ur, В = 3000 @ 600; trr, нс = 50 мс; Тексп, °C = -40...+150; Час станд. відн., (нс)/струм, мА = 500 мс; SOT-227B
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DSEI2X101-12A DSEI2X101-12A IXYS media-3320786.pdf description Rectifiers 1200V 2X91A
auf Bestellung 483 Stücke:
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DSEI2X121-02A DSEI2X121-02A IXYS media?resourcetype=datasheets&itemid=04d240e8-8e87-4d79-8545-f189a5c9a116&filename=Littelfuse-Power-Semiconductors-DSEI2x121-02A-Datasheet Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1431 Stücke:
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DSEI2X30-06C DSEI2X30-06C IXYS media?resourcetype=datasheets&itemid=6b3b6596-6f30-4608-9e1c-7810fd6f261d&filename=Littelfuse-Power-Semiconductors-DSEI2x30-06C-Datasheet Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 175 Stücke:
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DSEI2X30-06C IXYS media-3319568.pdf Rectifiers 60 Amps 600V
auf Bestellung 1225 Stücke:
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1+41.78 EUR
10+41.18 EUR
20+40.37 EUR
50+39.58 EUR
100+38.81 EUR
200+36.04 EUR
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DSEI2X31-06C DSEI2X31-06C IXYS media?resourcetype=datasheets&itemid=7060ae46-0411-4344-bab9-a3dc620fae72&filename=Littelfuse-Power-Semiconductors-DSEI2x31-06C-Datasheet Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 2151 Stücke:
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DSEI2X61-10B DSEI2X61-10B IXYS media?resourcetype=datasheets&itemid=52b7284d-8218-4e60-939b-cbd121290d5e&filename=Littelfuse-Power-Semiconductors-DSEI2x61-10B-Datasheet Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
auf Bestellung 678 Stücke:
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10+42.15 EUR
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DSEI2X61-12B DSEI2X61-12B IXYS media?resourcetype=datasheets&itemid=063b5a30-c723-4c85-b69d-7d14b1f3d707&filename=Littelfuse-Power-Semiconductors-DSEI2x61-12B-Datasheet description Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
auf Bestellung 229 Stücke:
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10+41.78 EUR
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DSEP2X61-03A DSEP2X61-03A IXYS media-3320586.pdf description Rectifiers 120 Amps 300V
auf Bestellung 89 Stücke:
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DSI2X55-12A DSI2X55-12A IXYS media?resourcetype=datasheets&itemid=ee983da7-c16b-47c9-9a56-65f936b26a0d&filename=littelfuse-power-semiconductors-dsi2x55-12a-datasheet description Description: DIODE MOD GP 1200V 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 291 Stücke:
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DSS2X101-015A DSS2X101-015A IXYS media?resourcetype=datasheets&itemid=680919b5-65d8-4679-8dc0-bb8f5e00f429&filename=Littelfuse-Power-Semiconductors-DSS2x101-015A-Datasheet description Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
auf Bestellung 240 Stücke:
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DSS2X101-02A IXYS DSS2x101-02A.pdf Диод Шоттки SOT-227B (miniBLOC) U=200 V I=100 A (per Diode) Pair Independent
auf Bestellung 10 Stücke:
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GD2X50MPS12N GD2X50MPS12N GeneSiC Semiconductor GD2X50MPS12N.pdf Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
auf Bestellung 221 Stücke:
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GHXS020A060S-D3 GHXS020A060S-D3 SemiQ GHXS020A060S_D3-1915589.pdf Diode Modules SiC SBD Parallel Power Module 600V 20A
auf Bestellung 1 Stücke:
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10+42.68 EUR
20+41.87 EUR
50+41.57 EUR
100+37.88 EUR
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500+35.97 EUR
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GHXS100B170S-D3 GHXS100B170S-D3 SemiQ GHXS100B170S_D3-3476211.pdf Diode Modules SiC 1700V 100A Schottky Diode Module
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10+117.87 EUR
20+117.80 EUR
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200+108.35 EUR
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IXFN100N50P IXFN100N50P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn100n50p_datasheet.pdf.pdf description Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 133 Stücke:
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IXFN100N65X2 IXFN100N65X2 IXYS media-3322851.pdf MOSFET Modules 650V/78A miniBLOC SOT-227
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IXFN110N60P3 IXFN110N60P3 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn110n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 341 Stücke:
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IXFN132N50P3 IXFN132N50P3 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 231 Stücke:
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IXFN140N30P IXFN140N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn140n30p_datasheet.pdf.pdf description Description: MOSFET N-CH 300V 110A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 323 Stücke:
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IXFN180N15P IXFN180N15P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn180n15p_datasheet.pdf.pdf description Description: MOSFET N-CH 150V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 2263 Stücke:
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IXFN180N25T IXFN180N25T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 616 Stücke:
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IXFN210N20P IXFN210N20P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn210n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 188A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 429 Stücke:
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IXFN210N30P3 IXFN210N30P3 IXYS media-3323433.pdf MOSFET Modules N-Channel: Power MOSFET w/Fast Diode
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IXFN220N20X3 IXFN220N20X3 IXYS media-3321700.pdf MOSFET Modules MBLOC 200V 160A N-CH X3CLASS
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IXFN230N20T IXFN230N20T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 725 Stücke:
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IXFN240N25X3 IXFN240N25X3 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn240n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
auf Bestellung 172 Stücke:
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IXFN32N100P IXFN32N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 623 Stücke:
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IXFN32N120P IXFN32N120P IXYS media-3321719.pdf MOSFET Modules 32 Amps 1200V
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IXFN340N07 IXFN340N07 IXYS media-3321952.pdf MOSFET Modules HiperFET Pwr MOSFET 70V, 340A
auf Bestellung 2532 Stücke:
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IXFN360N10T IXFN360N10T Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 1183 Stücke:
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10+35.19 EUR
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IXFN40N90P IXFN40N90P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 289 Stücke:
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IXFN44N100P IXFN44N100P IXYS media-3321686.pdf MOSFET Modules 44 Amps 1000V 0.22 Rds
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IXFN520N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn520n075t2_datasheet.pdf.pdf MOSFET N-CH 75V 480A SOT227
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IXFN60N80P IXFN60N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn60n80p_datasheet.pdf.pdf description Description: MOSFET N-CH 800V 53A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 371 Stücke:
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IXFN64N50P IXFN64N50P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8 description Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 300 Stücke:
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IXFN66N85X IXFN66N85X Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn66n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 287 Stücke:
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IXFN80N50P IXFN80N50P IXYS media-3321601.pdf MOSFET Modules 500V 80A
auf Bestellung 688 Stücke:
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IRU1206-33CD
Produktcode: 83106
zu Favoriten hinzufügen Lieblingsprodukt

datasheetcde8oeymfn98ey89dfy7w8edf.pdf
IRU1206-33CD
Hersteller: IR
IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C
verfügbar: 12 Stück
Anzahl Preis
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10+0.47 EUR
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APT100GLQ65JU3 APT100GLQ65JU3_Rev0-3444875.pdf
APT100GLQ65JU3
Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SOT227
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APT100GN120J APT100GN120B2_G__A_-3444799.pdf
APT100GN120J
Hersteller: Microchip Technology
IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 100 A SOT-227
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APT2X101D40J APT15D40BCT_G__E-3444524.pdf
APT2X101D40J
Hersteller: Microchip Technology
Rectifiers FRED D 400 V 100 A Dual Parallel SOT-227
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APT2X101DQ60J APT15D60B_G__H-3444991.pdf
APT2X101DQ60J
Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 100 A Dual Parallel SOT-227
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APT2X30D120J 6158-apt2x31d120j-apt2x30d120j-datasheet
APT2X30D120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.50 EUR
100+38.56 EUR
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APT2X30DQ60J APT15D60B_G__H-3444991.pdf
APT2X30DQ60J
Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 300 A Dual Anti-Parallel SOT-227
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.40 EUR
100+27.98 EUR
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APT2X31D30J APT2X31_30D30J_B-3500207.pdf
APT2X31D30J
Hersteller: Microchip Technology
Rectifiers FRED D 300 V 310 A Dual Parallel SOT-227
auf Bestellung 1 Stücke:
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Anzahl Preis
1+34.78 EUR
100+30.03 EUR
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APT2X31D60J APT15D60B_G__H-3444991.pdf
APT2X31D60J
Hersteller: Microchip Technology
Diode Modules FRED D 600 V 310 A Dual Parallel SOT-227
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.25 EUR
10+33.37 EUR
25+32.21 EUR
100+30.61 EUR
250+30.29 EUR
500+30.10 EUR
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APT2X31DQ60J APT15D60B_G__H-3444991.pdf
APT2X31DQ60J
Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 310 A Dual Parallel SOT-227
auf Bestellung 26 Stücke:
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Anzahl Preis
1+33.90 EUR
100+29.27 EUR
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APT2X31S20J 6162-apt2x31s20j-datasheet
APT2X31S20J
Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.12 EUR
100+29.36 EUR
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APT2X61D100J APT15D100BCT_G__B-3444462.pdf
APT2X61D100J
Hersteller: Microchip Technology
Rectifiers FRED D 1000 V 610 A Dual Parallel SOT-227
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.31 EUR
10+47.29 EUR
25+47.27 EUR
100+40.50 EUR
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APT2X61DQ120J APT2x61_60DQ120J_D-3500494.pdf
APT2X61DQ120J
Hersteller: Microchip Technology
Rectifiers FRED DQ 1200 V 610 A Dual Parallel SOT-227
auf Bestellung 1534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.51 EUR
10+39.09 EUR
25+37.26 EUR
100+34.53 EUR
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APT30M19JVFR APT30M19JVFR.pdf
APT30M19JVFR
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 520A
Power dissipation: 700W
Technology: POWER MOS V®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+103.96 EUR
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APT5010JVR 6293-apt5010jvr-datasheet
APT5010JVR
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+54.00 EUR
Mindestbestellmenge: 2
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APT60GA60JD60 123665-apt60ga60jd60-d-datasheet
APT60GA60JD60
Hersteller: Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.04 EUR
100+44.65 EUR
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APT75GP120JDQ3 APT13GP120BDQ1G_MOS7_PT_IGBT_w_DQ_Diode_Datasheet-3444365.pdf
APT75GP120JDQ3
Hersteller: Microchip Technology
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.40 EUR
10+72.93 EUR
100+66.56 EUR
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C40-058-AE sink-c40.pdf
C40-058-AE
Hersteller: Ohmite
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.28 EUR
10+9.09 EUR
25+8.66 EUR
50+8.35 EUR
100+8.04 EUR
250+7.66 EUR
500+7.38 EUR
Mindestbestellmenge: 2
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DCG130X1200NA media-3320767.pdf
DCG130X1200NA
Hersteller: IXYS
SiC Schottky Diodes SCHOTTKY DIODE SOT-227B-4
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+358.88 EUR
10+353.50 EUR
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DH2x61-18A media?resourcetype=datasheets&itemid=145808c1-d7b3-48b1-bcbe-f9e09603d296&filename=Littelfuse-Power-Semiconductors-DH2x61-18A-Datasheet
DH2x61-18A
Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
auf Bestellung 619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+64.45 EUR
10+47.96 EUR
100+43.13 EUR
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DPF240X400NA media-3319269.pdf
DPF240X400NA
Hersteller: IXYS
Rectifiers HiPerFRED
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+65.74 EUR
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DSEI2X101-06A media?resourcetype=datasheets&itemid=480047e3-30ec-4e0b-b058-787e0545fd19&filename=Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet
DSEI2X101-06A
Hersteller: IXYS
Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.85 EUR
10+43.56 EUR
100+38.51 EUR
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DSEI2X101-06A media?resourcetype=datasheets&itemid=480047e3-30ec-4e0b-b058-787e0545fd19&filename=Littelfuse-Power-Semiconductors-DSEI2x101-06A-Datasheet
Hersteller: IXYS/Littelfuse
2 незалежних випрямних ультрашвидких епітаксіальних діоди на шасі; Uзвор, В = 600; Io, А = 96; Uf (max), В = 1,25; If, A = 100; I, мкА @ Ur, В = 3000 @ 600; trr, нс = 50 мс; Тексп, °C = -40...+150; Час станд. відн., (нс)/струм, мА = 500 мс; SOT-227B
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+44.69 EUR
10+37.13 EUR
100+31.25 EUR
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DSEI2X101-12A description media-3320786.pdf
DSEI2X101-12A
Hersteller: IXYS
Rectifiers 1200V 2X91A
auf Bestellung 483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.97 EUR
10+70.24 EUR
20+68.87 EUR
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DSEI2X121-02A media?resourcetype=datasheets&itemid=04d240e8-8e87-4d79-8545-f189a5c9a116&filename=Littelfuse-Power-Semiconductors-DSEI2x121-02A-Datasheet
DSEI2X121-02A
Hersteller: IXYS
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+57.66 EUR
10+42.62 EUR
100+37.53 EUR
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DSEI2X30-06C media?resourcetype=datasheets&itemid=6b3b6596-6f30-4608-9e1c-7810fd6f261d&filename=Littelfuse-Power-Semiconductors-DSEI2x30-06C-Datasheet
DSEI2X30-06C
Hersteller: IXYS
Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.51 EUR
10+35.49 EUR
100+30.22 EUR
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DSEI2X30-06C media-3319568.pdf
Hersteller: IXYS
Rectifiers 60 Amps 600V
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.78 EUR
10+41.18 EUR
20+40.37 EUR
50+39.58 EUR
100+38.81 EUR
200+36.04 EUR
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DSEI2X31-06C media?resourcetype=datasheets&itemid=7060ae46-0411-4344-bab9-a3dc620fae72&filename=Littelfuse-Power-Semiconductors-DSEI2x31-06C-Datasheet
DSEI2X31-06C
Hersteller: IXYS
Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 2151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.00 EUR
10+30.42 EUR
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DSEI2X61-10B media?resourcetype=datasheets&itemid=52b7284d-8218-4e60-939b-cbd121290d5e&filename=Littelfuse-Power-Semiconductors-DSEI2x61-10B-Datasheet
DSEI2X61-10B
Hersteller: IXYS
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+57.04 EUR
10+42.15 EUR
100+37.05 EUR
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DSEI2X61-12B description media?resourcetype=datasheets&itemid=063b5a30-c723-4c85-b69d-7d14b1f3d707&filename=Littelfuse-Power-Semiconductors-DSEI2x61-12B-Datasheet
DSEI2X61-12B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+56.58 EUR
10+41.78 EUR
100+36.66 EUR
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DSEP2X61-03A description media-3320586.pdf
DSEP2X61-03A
Hersteller: IXYS
Rectifiers 120 Amps 300V
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+49.79 EUR
10+39.42 EUR
20+39.27 EUR
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DSI2X55-12A description media?resourcetype=datasheets&itemid=ee983da7-c16b-47c9-9a56-65f936b26a0d&filename=littelfuse-power-semiconductors-dsi2x55-12a-datasheet
DSI2X55-12A
Hersteller: IXYS
Description: DIODE MOD GP 1200V 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.82 EUR
10+30.33 EUR
100+25.06 EUR
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DSS2X101-015A description media?resourcetype=datasheets&itemid=680919b5-65d8-4679-8dc0-bb8f5e00f429&filename=Littelfuse-Power-Semiconductors-DSS2x101-015A-Datasheet
DSS2X101-015A
Hersteller: IXYS
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.18 EUR
10+36.79 EUR
100+31.53 EUR
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DSS2X101-02A DSS2x101-02A.pdf
Hersteller: IXYS
Диод Шоттки SOT-227B (miniBLOC) U=200 V I=100 A (per Diode) Pair Independent
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+268.80 EUR
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GD2X50MPS12N GD2X50MPS12N.pdf
GD2X50MPS12N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+78.16 EUR
10+71.67 EUR
25+69.25 EUR
100+65.73 EUR
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GHXS020A060S-D3 GHXS020A060S_D3-1915589.pdf
GHXS020A060S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 20A
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+56.07 EUR
10+42.68 EUR
20+41.87 EUR
50+41.57 EUR
100+37.88 EUR
200+36.63 EUR
500+35.97 EUR
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GHXS100B170S-D3 GHXS100B170S_D3-3476211.pdf
GHXS100B170S-D3
Hersteller: SemiQ
Diode Modules SiC 1700V 100A Schottky Diode Module
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+138.21 EUR
10+117.87 EUR
20+117.80 EUR
50+113.59 EUR
100+109.40 EUR
200+108.35 EUR
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IXFN100N50P description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn100n50p_datasheet.pdf.pdf
IXFN100N50P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+70.49 EUR
10+54.64 EUR
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IXFN100N65X2 media-3322851.pdf
IXFN100N65X2
Hersteller: IXYS
MOSFET Modules 650V/78A miniBLOC SOT-227
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.16 EUR
10+39.60 EUR
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IXFN110N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn110n60p3_datasheet.pdf.pdf
IXFN110N60P3
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.16 EUR
10+53.26 EUR
100+48.77 EUR
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IXFN132N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn132n50p3_datasheet.pdf.pdf
IXFN132N50P3
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.16 EUR
10+53.26 EUR
100+48.77 EUR
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IXFN140N30P description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn140n30p_datasheet.pdf.pdf
IXFN140N30P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 110A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 323 Stücke:
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Anzahl Preis
1+40.20 EUR
10+37.35 EUR
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IXFN180N15P description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn180n15p_datasheet.pdf.pdf
IXFN180N15P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 2263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.72 EUR
10+35.66 EUR
100+30.39 EUR
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IXFN180N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn180n25t_datasheet.pdf.pdf
IXFN180N25T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.74 EUR
10+37.23 EUR
100+31.98 EUR
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IXFN210N20P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn210n20p_datasheet.pdf.pdf
IXFN210N20P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 188A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.92 EUR
10+58.63 EUR
100+54.56 EUR
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IXFN210N30P3 media-3323433.pdf
IXFN210N30P3
Hersteller: IXYS
MOSFET Modules N-Channel: Power MOSFET w/Fast Diode
auf Bestellung 847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.63 EUR
10+69.17 EUR
20+65.05 EUR
50+62.87 EUR
100+60.70 EUR
200+58.71 EUR
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IXFN220N20X3 media-3321700.pdf
IXFN220N20X3
Hersteller: IXYS
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.80 EUR
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IXFN230N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn230n20t_datasheet.pdf.pdf
IXFN230N20T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.87 EUR
10+47.50 EUR
100+42.65 EUR
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IXFN240N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn240n25x3_datasheet.pdf.pdf
IXFN240N25X3
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.84 EUR
10+54.05 EUR
100+54.03 EUR
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IXFN32N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n100p_datasheet.pdf.pdf
IXFN32N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.61 EUR
10+47.29 EUR
100+42.43 EUR
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IXFN32N120P media-3321719.pdf
IXFN32N120P
Hersteller: IXYS
MOSFET Modules 32 Amps 1200V
auf Bestellung 505 Stücke:
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Anzahl Preis
1+109.91 EUR
10+101.82 EUR
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IXFN340N07 media-3321952.pdf
IXFN340N07
Hersteller: IXYS
MOSFET Modules HiperFET Pwr MOSFET 70V, 340A
auf Bestellung 2532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.83 EUR
10+71.24 EUR
100+70.98 EUR
200+67.94 EUR
500+67.87 EUR
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IXFN360N10T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFN360N10T-Datasheet.PDF?assetguid=266AF6DA-14C9-4348-BA01-DC3A8F4611CB
IXFN360N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 1183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.12 EUR
10+35.19 EUR
100+29.91 EUR
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IXFN40N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n90p_datasheet.pdf.pdf
IXFN40N90P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.80 EUR
10+48.32 EUR
100+47.51 EUR
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IXFN44N100P media-3321686.pdf
IXFN44N100P
Hersteller: IXYS
MOSFET Modules 44 Amps 1000V 0.22 Rds
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.14 EUR
10+59.01 EUR
20+57.57 EUR
50+56.65 EUR
100+55.76 EUR
200+53.31 EUR
500+51.46 EUR
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IXFN520N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn520n075t2_datasheet.pdf.pdf
Hersteller: IXYS
MOSFET N-CH 75V 480A SOT227
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+142.08 EUR
10+130.56 EUR
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IXFN60N80P description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn60n80p_datasheet.pdf.pdf
IXFN60N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 53A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.94 EUR
10+57.07 EUR
100+52.87 EUR
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IXFN64N50P description Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8
IXFN64N50P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.42 EUR
10+36.98 EUR
100+31.73 EUR
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IXFN66N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn66n85x_datasheet.pdf.pdf
IXFN66N85X
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.04 EUR
10+51.77 EUR
100+51.43 EUR
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IXFN80N50P media-3321601.pdf
IXFN80N50P
Hersteller: IXYS
MOSFET Modules 500V 80A
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.20 EUR
10+41.20 EUR
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