Suchergebnisse für "sot227" : > 60
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRU1206-33CD Produktcode: 83106
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() Gehäuse: SOT-227 Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS Spannung, eing., V: 12V I-ausg., A: 1A Temperaturbereich: 0…+135°C |
verfügbar: 12 Stück
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APT100GLQ65JU3 | Microchip Technology |
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auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GN120J | Microchip Technology |
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auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X101D40J | Microchip Technology |
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auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X101DQ60J | Microchip Technology |
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auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X30D120J | Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X30DQ60J | Microchip Technology |
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auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31D30J | Microchip Technology |
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auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31D60J | Microchip Technology |
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auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31DQ60J | Microchip Technology |
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auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31S20J | Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
auf Bestellung 472 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X61D100J | Microchip Technology |
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auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X61DQ120J | Microchip Technology |
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auf Bestellung 1534 Stücke: Lieferzeit 10-14 Tag (e) |
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APT30M19JVFR | MICROCHIP TECHNOLOGY |
![]() Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 19mΩ Pulsed drain current: 520A Power dissipation: 700W Technology: POWER MOS V® Gate-source voltage: ±30V Kind of package: tube Mechanical mounting: screw Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT5010JVR | MICROCHIP TECHNOLOGY |
![]() Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 44A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.1Ω Pulsed drain current: 176A Power dissipation: 450W Technology: POWER MOS 5® Gate-source voltage: ±30V Kind of package: tube Mechanical mounting: screw Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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APT60GA60JD60 | Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 112 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 356 W Current - Collector Cutoff (Max): 275 µA Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V |
auf Bestellung 1258 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GP120JDQ3 | Microchip Technology |
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auf Bestellung 2539 Stücke: Lieferzeit 10-14 Tag (e) |
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C40-058-AE | Ohmite |
![]() Packaging: Box Material: Aluminum Length: 2.283" (58.00mm) Shape: Rectangular, Fins Type: Board Level, Vertical Width: 1.724" (43.79mm) Package Cooled: TO-247, TO-264, SOT-227 Attachment Method: Clip and Board Mounts Fin Height: 1.260" (32.00mm) Material Finish: Black Anodized Part Status: Active |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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DCG130X1200NA | IXYS |
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auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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DH2x61-18A | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
auf Bestellung 619 Stücke: Lieferzeit 10-14 Tag (e) |
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DPF240X400NA | IXYS |
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auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X101-06A | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 96A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 600 V |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X101-06A | IXYS/Littelfuse |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI2X101-12A | IXYS |
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auf Bestellung 483 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X121-02A | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 123A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
auf Bestellung 1431 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X30-06C | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X30-06C | IXYS |
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auf Bestellung 1225 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X31-06C | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
auf Bestellung 2151 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X61-10B | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 1000 V |
auf Bestellung 678 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X61-12B | IXYS |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 52A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V |
auf Bestellung 229 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEP2X61-03A | IXYS |
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auf Bestellung 89 Stücke: Lieferzeit 10-14 Tag (e) |
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DSI2X55-12A | IXYS |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 56A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS2X101-015A | IXYS |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A Current - Reverse Leakage @ Vr: 4 mA @ 150 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS2X101-02A | IXYS |
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auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X50MPS12N | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 76A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V |
auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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GHXS020A060S-D3 | SemiQ |
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auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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GHXS100B170S-D3 | SemiQ |
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auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN100N50P | Littelfuse Inc. |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN100N65X2 | IXYS |
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auf Bestellung 253 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN110N60P3 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN132N50P3 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
auf Bestellung 231 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN140N30P | Littelfuse Inc. |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V |
auf Bestellung 323 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN180N15P | Littelfuse Inc. |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V Power Dissipation (Max): 680W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V |
auf Bestellung 2263 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN180N25T | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 900W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
auf Bestellung 616 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN210N20P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 188A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
auf Bestellung 429 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN210N30P3 | IXYS |
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auf Bestellung 847 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN220N20X3 | IXYS |
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auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN230N20T | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1090W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN240N25X3 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN32N100P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V |
auf Bestellung 623 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN32N120P | IXYS |
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auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN340N07 | IXYS |
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auf Bestellung 2532 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN360N10T | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V |
auf Bestellung 1183 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN40N90P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
auf Bestellung 289 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN44N100P | IXYS |
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auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN520N075T2 | IXYS |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN60N80P | Littelfuse Inc. |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN64N50P | Littelfuse Inc. |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN66N85X | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN80N50P | IXYS |
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auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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IRU1206-33CD Produktcode: 83106
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C
IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C
verfügbar: 12 Stück
Anzahl | Preis |
---|---|
1+ | 0.55 EUR |
10+ | 0.47 EUR |
APT100GLQ65JU3 |
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Hersteller: Microchip Technology
IGBT Modules PM-IGBT-TFS-SOT227
IGBT Modules PM-IGBT-TFS-SOT227
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 49.58 EUR |
25+ | 45.44 EUR |
100+ | 43.16 EUR |
250+ | 43.07 EUR |
500+ | 43.03 EUR |
1000+ | 43.01 EUR |
5000+ | 42.96 EUR |
APT100GN120J |
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Hersteller: Microchip Technology
IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 100 A SOT-227
IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 100 A SOT-227
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 62.71 EUR |
100+ | 54.14 EUR |
APT2X101D40J |
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Hersteller: Microchip Technology
Rectifiers FRED D 400 V 100 A Dual Parallel SOT-227
Rectifiers FRED D 400 V 100 A Dual Parallel SOT-227
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 46.99 EUR |
10+ | 46.04 EUR |
25+ | 45.39 EUR |
100+ | 40.94 EUR |
APT2X101DQ60J |
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Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 100 A Dual Parallel SOT-227
Rectifiers FRED DQ 600 V 100 A Dual Parallel SOT-227
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 39.32 EUR |
10+ | 38.60 EUR |
25+ | 38.10 EUR |
100+ | 34.53 EUR |
APT2X30D120J |
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Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 47.50 EUR |
100+ | 38.56 EUR |
APT2X30DQ60J |
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Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 300 A Dual Anti-Parallel SOT-227
Rectifiers FRED DQ 600 V 300 A Dual Anti-Parallel SOT-227
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 32.40 EUR |
100+ | 27.98 EUR |
APT2X31D30J |
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Hersteller: Microchip Technology
Rectifiers FRED D 300 V 310 A Dual Parallel SOT-227
Rectifiers FRED D 300 V 310 A Dual Parallel SOT-227
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 34.78 EUR |
100+ | 30.03 EUR |
APT2X31D60J |
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Hersteller: Microchip Technology
Diode Modules FRED D 600 V 310 A Dual Parallel SOT-227
Diode Modules FRED D 600 V 310 A Dual Parallel SOT-227
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 34.25 EUR |
10+ | 33.37 EUR |
25+ | 32.21 EUR |
100+ | 30.61 EUR |
250+ | 30.29 EUR |
500+ | 30.10 EUR |
APT2X31DQ60J |
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Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 310 A Dual Parallel SOT-227
Rectifiers FRED DQ 600 V 310 A Dual Parallel SOT-227
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 33.90 EUR |
100+ | 29.27 EUR |
APT2X31S20J |
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Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 36.12 EUR |
100+ | 29.36 EUR |
APT2X61D100J |
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Hersteller: Microchip Technology
Rectifiers FRED D 1000 V 610 A Dual Parallel SOT-227
Rectifiers FRED D 1000 V 610 A Dual Parallel SOT-227
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 47.31 EUR |
10+ | 47.29 EUR |
25+ | 47.27 EUR |
100+ | 40.50 EUR |
APT2X61DQ120J |
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Hersteller: Microchip Technology
Rectifiers FRED DQ 1200 V 610 A Dual Parallel SOT-227
Rectifiers FRED DQ 1200 V 610 A Dual Parallel SOT-227
auf Bestellung 1534 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 39.51 EUR |
10+ | 39.09 EUR |
25+ | 37.26 EUR |
100+ | 34.53 EUR |
APT30M19JVFR |
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Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 520A
Power dissipation: 700W
Technology: POWER MOS V®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 520A
Power dissipation: 700W
Technology: POWER MOS V®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 103.96 EUR |
APT5010JVR |
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Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 54.00 EUR |
APT60GA60JD60 |
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Hersteller: Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 55.04 EUR |
100+ | 44.65 EUR |
APT75GP120JDQ3 |
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Hersteller: Microchip Technology
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 75.40 EUR |
10+ | 72.93 EUR |
100+ | 66.56 EUR |
C40-058-AE |
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Hersteller: Ohmite
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.28 EUR |
10+ | 9.09 EUR |
25+ | 8.66 EUR |
50+ | 8.35 EUR |
100+ | 8.04 EUR |
250+ | 7.66 EUR |
500+ | 7.38 EUR |
DCG130X1200NA |
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Hersteller: IXYS
SiC Schottky Diodes SCHOTTKY DIODE SOT-227B-4
SiC Schottky Diodes SCHOTTKY DIODE SOT-227B-4
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 358.88 EUR |
10+ | 353.50 EUR |
DH2x61-18A |
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Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
auf Bestellung 619 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 64.45 EUR |
10+ | 47.96 EUR |
100+ | 43.13 EUR |
DPF240X400NA |
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Hersteller: IXYS
Rectifiers HiPerFRED
Rectifiers HiPerFRED
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 65.74 EUR |
DSEI2X101-06A |
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Hersteller: IXYS
Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Description: DIODE MODULE GP 600V 96A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 96A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 58.85 EUR |
10+ | 43.56 EUR |
100+ | 38.51 EUR |
DSEI2X101-06A |
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Hersteller: IXYS/Littelfuse
2 незалежних випрямних ультрашвидких епітаксіальних діоди на шасі; Uзвор, В = 600; Io, А = 96; Uf (max), В = 1,25; If, A = 100; I, мкА @ Ur, В = 3000 @ 600; trr, нс = 50 мс; Тексп, °C = -40...+150; Час станд. відн., (нс)/струм, мА = 500 мс; SOT-227B
2 незалежних випрямних ультрашвидких епітаксіальних діоди на шасі; Uзвор, В = 600; Io, А = 96; Uf (max), В = 1,25; If, A = 100; I, мкА @ Ur, В = 3000 @ 600; trr, нс = 50 мс; Тексп, °C = -40...+150; Час станд. відн., (нс)/струм, мА = 500 мс; SOT-227B
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 44.69 EUR |
10+ | 37.13 EUR |
100+ | 31.25 EUR |
DSEI2X101-12A | ![]() |
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Hersteller: IXYS
Rectifiers 1200V 2X91A
Rectifiers 1200V 2X91A
auf Bestellung 483 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.97 EUR |
10+ | 70.24 EUR |
20+ | 68.87 EUR |
DSEI2X121-02A |
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Hersteller: IXYS
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1431 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 57.66 EUR |
10+ | 42.62 EUR |
100+ | 37.53 EUR |
DSEI2X30-06C |
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Hersteller: IXYS
Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 48.51 EUR |
10+ | 35.49 EUR |
100+ | 30.22 EUR |
DSEI2X30-06C |
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Hersteller: IXYS
Rectifiers 60 Amps 600V
Rectifiers 60 Amps 600V
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 41.78 EUR |
10+ | 41.18 EUR |
20+ | 40.37 EUR |
50+ | 39.58 EUR |
100+ | 38.81 EUR |
200+ | 36.04 EUR |
DSEI2X31-06C |
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Hersteller: IXYS
Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE MODULE GP 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 2151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 39.00 EUR |
10+ | 30.42 EUR |
DSEI2X61-10B |
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Hersteller: IXYS
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 57.04 EUR |
10+ | 42.15 EUR |
100+ | 37.05 EUR |
DSEI2X61-12B | ![]() |
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Hersteller: IXYS
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 56.58 EUR |
10+ | 41.78 EUR |
100+ | 36.66 EUR |
DSEP2X61-03A | ![]() |
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Hersteller: IXYS
Rectifiers 120 Amps 300V
Rectifiers 120 Amps 300V
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 49.79 EUR |
10+ | 39.42 EUR |
20+ | 39.27 EUR |
DSI2X55-12A | ![]() |
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Hersteller: IXYS
Description: DIODE MOD GP 1200V 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: DIODE MOD GP 1200V 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 41.82 EUR |
10+ | 30.33 EUR |
100+ | 25.06 EUR |
DSS2X101-015A | ![]() |
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Hersteller: IXYS
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 50.18 EUR |
10+ | 36.79 EUR |
100+ | 31.53 EUR |
DSS2X101-02A |
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Hersteller: IXYS
Диод Шоттки SOT-227B (miniBLOC) U=200 V I=100 A (per Diode) Pair Independent
Диод Шоттки SOT-227B (miniBLOC) U=200 V I=100 A (per Diode) Pair Independent
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 268.80 EUR |
GD2X50MPS12N |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 78.16 EUR |
10+ | 71.67 EUR |
25+ | 69.25 EUR |
100+ | 65.73 EUR |
GHXS020A060S-D3 |
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Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 20A
Diode Modules SiC SBD Parallel Power Module 600V 20A
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 56.07 EUR |
10+ | 42.68 EUR |
20+ | 41.87 EUR |
50+ | 41.57 EUR |
100+ | 37.88 EUR |
200+ | 36.63 EUR |
500+ | 35.97 EUR |
GHXS100B170S-D3 |
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Hersteller: SemiQ
Diode Modules SiC 1700V 100A Schottky Diode Module
Diode Modules SiC 1700V 100A Schottky Diode Module
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 138.21 EUR |
10+ | 117.87 EUR |
20+ | 117.80 EUR |
50+ | 113.59 EUR |
100+ | 109.40 EUR |
200+ | 108.35 EUR |
IXFN100N50P | ![]() |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 500V 90A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 70.49 EUR |
10+ | 54.64 EUR |
IXFN100N65X2 |
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Hersteller: IXYS
MOSFET Modules 650V/78A miniBLOC SOT-227
MOSFET Modules 650V/78A miniBLOC SOT-227
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 50.16 EUR |
10+ | 39.60 EUR |
IXFN110N60P3 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.16 EUR |
10+ | 53.26 EUR |
100+ | 48.77 EUR |
IXFN132N50P3 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Description: MOSFET N-CH 500V 112A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.16 EUR |
10+ | 53.26 EUR |
100+ | 48.77 EUR |
IXFN140N30P | ![]() |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 110A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
Description: MOSFET N-CH 300V 110A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 40.20 EUR |
10+ | 37.35 EUR |
IXFN180N15P | ![]() |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Description: MOSFET N-CH 150V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 2263 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 48.72 EUR |
10+ | 35.66 EUR |
100+ | 30.39 EUR |
IXFN180N25T |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 50.74 EUR |
10+ | 37.23 EUR |
100+ | 31.98 EUR |
IXFN210N20P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 188A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Description: MOSFET N-CH 200V 188A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 77.92 EUR |
10+ | 58.63 EUR |
100+ | 54.56 EUR |
IXFN210N30P3 |
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Hersteller: IXYS
MOSFET Modules N-Channel: Power MOSFET w/Fast Diode
MOSFET Modules N-Channel: Power MOSFET w/Fast Diode
auf Bestellung 847 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 77.63 EUR |
10+ | 69.17 EUR |
20+ | 65.05 EUR |
50+ | 62.87 EUR |
100+ | 60.70 EUR |
200+ | 58.71 EUR |
IXFN220N20X3 |
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Hersteller: IXYS
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 42.80 EUR |
IXFN230N20T |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 63.87 EUR |
10+ | 47.50 EUR |
100+ | 42.65 EUR |
IXFN240N25X3 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
Description: MOSFET N-CH 250V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 69.84 EUR |
10+ | 54.05 EUR |
100+ | 54.03 EUR |
IXFN32N100P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 63.61 EUR |
10+ | 47.29 EUR |
100+ | 42.43 EUR |
IXFN32N120P |
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Hersteller: IXYS
MOSFET Modules 32 Amps 1200V
MOSFET Modules 32 Amps 1200V
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 109.91 EUR |
10+ | 101.82 EUR |
IXFN340N07 |
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Hersteller: IXYS
MOSFET Modules HiperFET Pwr MOSFET 70V, 340A
MOSFET Modules HiperFET Pwr MOSFET 70V, 340A
auf Bestellung 2532 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 83.83 EUR |
10+ | 71.24 EUR |
100+ | 70.98 EUR |
200+ | 67.94 EUR |
500+ | 67.87 EUR |
IXFN360N10T |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 1183 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 48.12 EUR |
10+ | 35.19 EUR |
100+ | 29.91 EUR |
IXFN40N90P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 62.80 EUR |
10+ | 48.32 EUR |
100+ | 47.51 EUR |
IXFN44N100P |
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Hersteller: IXYS
MOSFET Modules 44 Amps 1000V 0.22 Rds
MOSFET Modules 44 Amps 1000V 0.22 Rds
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.14 EUR |
10+ | 59.01 EUR |
20+ | 57.57 EUR |
50+ | 56.65 EUR |
100+ | 55.76 EUR |
200+ | 53.31 EUR |
500+ | 51.46 EUR |
IXFN520N075T2 |
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Hersteller: IXYS
MOSFET N-CH 75V 480A SOT227
MOSFET N-CH 75V 480A SOT227
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 142.08 EUR |
10+ | 130.56 EUR |
IXFN60N80P | ![]() |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 53A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Description: MOSFET N-CH 800V 53A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 75.94 EUR |
10+ | 57.07 EUR |
100+ | 52.87 EUR |
IXFN64N50P | ![]() |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 50.42 EUR |
10+ | 36.98 EUR |
100+ | 31.73 EUR |
IXFN66N85X |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 67.04 EUR |
10+ | 51.77 EUR |
100+ | 51.43 EUR |
IXFN80N50P |
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Hersteller: IXYS
MOSFET Modules 500V 80A
MOSFET Modules 500V 80A
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 52.20 EUR |
10+ | 41.20 EUR |
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