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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRU1206-33CD Produktcode: 83106
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
IC > IC NetzteileGehäuse: SOT-227 Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS Spannung, eing., V: 12V I-ausg., A: 1A Temperaturbereich: 0…+135°C |
verfügbar: 12 St.
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APL502J | Microchip Technology |
MOSFET Modules MOSFET Linear 500 V 52 A SOT-227 |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT20M22JVR | Microchip Technology |
MOSFET Modules MOSFET MOS 5 200 V 22 mOhm SOT-227 |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X100DQ100J | Microchip Technology |
Rectifiers FRED DQ 1000 V 100 A Dual Anti-Parallel SOT-227 |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X30DQ60J | Microchip Technology |
Rectifiers FRED DQ 600 V 30 A Dual Anti-Parallel SOT-227 |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31D20J | Microchip Technology |
Rectifiers FRED D 200 V 30 A Dual Parallel SOT-227 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31D40J | Microchip Technology |
Rectifiers FRED D 400 V 30 A Dual Parallel SOT-227 |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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APT2X31S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 45A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
auf Bestellung 883 Stücke: Lieferzeit 10-14 Tag (e) |
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APT30M40JVR | Microchip Technology |
MOSFET Modules MOSFET MOS 5 300 V 40 mOhm SOT-227 |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT50M50JFLL | Microchip Technology |
MOSFET Modules FREDFET MOS 7 500 V 50 mOhm SOT-227 |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GP120JDQ3 | Microchip Technology |
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227 |
auf Bestellung 1310 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT75GP120JDQ3 | Microsemi |
IGBT 1200V 128A 543W SOT227 Транзистори |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| APT8030JVFR | Microchip Technology |
MOSFET Modules FREDFET MOS 5 800 V 300 mOhm SOT-227 |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT80M60J | Microchip Technology |
MOSFET Modules MOSFET MOS 8 600 V 80 A SOT-227 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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APT85GR120J | Microchip Technology |
IGBTs IGBT MOS 8 1200 V 85 A SOT-227 |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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C40-058-AE | Ohmite |
Description: HEATSINK FOR TO-247 TO-264Packaging: Box Material: Aluminum Length: 2.283" (58.00mm) Shape: Rectangular, Fins Type: Board Level, Vertical Width: 1.724" (43.79mm) Package Cooled: TO-247, TO-264, SOT-227 Attachment Method: Clip and Board Mounts Fin Height: 1.260" (32.00mm) Material Finish: Black Anodized Part Status: Active |
auf Bestellung 2972 Stücke: Lieferzeit 10-14 Tag (e) |
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DH2x61-18A | IXYS |
Description: DIODE MOD GP 1800V 60A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X121-02A | IXYS |
Description: DIODE MOD GP 200V 123A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 123A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
auf Bestellung 665 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X31-12B | IXYS |
Description: DIODE MOD GP 1200V 28A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A Current - Reverse Leakage @ Vr: 750 µA @ 1200 V |
auf Bestellung 6057 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X61-06C | IXYS |
Description: DIODE MODULE GP 600V 60A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
auf Bestellung 2275 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X61-10B | IXYS |
Description: DIODE MOD GP 1000V 60A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 1000 V |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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DSEI2X61-12B | IXYS |
Description: DIODE MOD GP 1200V 52A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 52A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V |
auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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GB2X50MPS12-227 | GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS |
auf Bestellung 1747 Stücke: Lieferzeit 10-14 Tag (e) |
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GHXS060A120S-D3 | SemiQ |
Diode Modules 1200V, 60A, SOT-227 diode module |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IXEN60N120 |
NPT2 IGBT (Ic25=100 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN140N20P | IXYS |
Description: MOSFET N-CH 200V 115A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V Power Dissipation (Max): 680W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
auf Bestellung 762 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN180N20 |
SOT-227B, HiPerFET, N-Channel MOSFET, Id=180A, Vdss=200V, -55...+150 Транзистори |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN360N10T | IXYS |
Description: MOSFET N-CH 100V 360A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V |
auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN520N075T2 | IXYS |
Description: MOSFET N-CH 75V 480A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 480A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 940W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V |
auf Bestellung 821 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN64N50P | IXYS |
Description: MOSFET N-CH 500V 61A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGN200N170 | IXYS |
IGBTs SOT227 1700V 160A IGBT |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGN400N60B3 | IXYS |
IGBT Modules Mid-Frequency Range PT IGBTs |
auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN200N10L2 | IXYS |
Description: MOSFET N-CH 100V 178A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 178A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN500N20X4 | IXYS |
MOSFET Modules 200V 1.99mohm 500A Ultra Junction X4-Class Power MOSFET in SOT-227B |
auf Bestellung 452 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN600N04T2 | IXYS |
Description: MOSFET N-CH 40V 600A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 940W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
auf Bestellung 1576 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN90N25L2 | IXYS |
Description: MOSFET N-CH 250V 90A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
auf Bestellung 679 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXN110N65C4H1 | IXYS |
IGBT Modules 650V/234A Trench IGBT GenX4 XPT |
auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYN140N120A4 | IXYS |
IGBTs SOT227 1200V 140A XPT |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC025SMA120J | Microchip Technology |
MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227 |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC080SMA120J | Microchip Technology |
MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227 |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC2X51SDA070J | Microchip Technology |
Diode Modules SIC SBD 700 V 50 A Dual Parallel SOT-227 |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR2X060A02 | GeneSiC Semiconductor |
Diode Modules 200V 120A Fwd Super Fast Recovery |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-0R1J1 | Riedon products by Bourns |
Description: RES CHAS MNT 0.1 OHM 5% 200WPackaging: Tube Power (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 100 mOhms |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-0R2J1 | Riedon products by Bourns |
Description: RES CHAS MNT 0.2 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 200 mOhms |
auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-0R5J1 | Riedon products by Bourns |
Description: RES CHAS MNT 0.5 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 500 mOhms |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-100RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 100 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 100 Ohms |
auf Bestellung 814 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-10RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 10 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 10 Ohms |
auf Bestellung 1325 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-1RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 1 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 1 Ohms |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-20RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 20 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 20 Ohms |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-2RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 2 OHM 5% 200WPackaging: Tube Power (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 2 Ohms |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-50RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 50 OHM 5% 200WPower (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Packaging: Tube Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 50 Ohms |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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PF2272-5RJ1 | Riedon products by Bourns |
Description: RES CHAS MNT 5 OHM 5% 200WPackaging: Tube Power (Watts): 200W Tolerance: ±5% Lead Style: M4 Threaded Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety Package / Case: SOT-227-4 Temperature Coefficient: ±100ppm/°C Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Oxide Height - Seated (Max): 0.484" (12.30mm) Resistance: 5 Ohms |
auf Bestellung 1041 Stücke: Lieferzeit 10-14 Tag (e) |
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S4D80120S2 | SMC DIODE SOLUTIONS |
Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw Load current: 41A x2 Max. off-state voltage: 1.2kV Max. load current: 82A Max. forward impulse current: 245A Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double independent Case: SOT227 Technology: SiC Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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SK2S120-100 | SMC Diode Solutions |
Description: DIODE MOD SCHOTT 100V 60A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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STE53NC50 | STMicroelectronics |
Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W Polarisation: unipolar On-state resistance: 70mΩ Gate-source voltage: ±30V Drain current: 33A Pulsed drain current: 212A Power dissipation: 460W Drain-source voltage: 500V Kind of package: tube Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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STE70NM60 | STMicroelectronics |
Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W Polarisation: unipolar On-state resistance: 55mΩ Gate-source voltage: ±30V Drain current: 70A Pulsed drain current: 44A Power dissipation: 600W Drain-source voltage: 600V Kind of package: tube Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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STGE200NB60S | STMicroelectronics |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W Gate-emitter voltage: ±20V Max. off-state voltage: 0.6kV Collector current: 150A Pulsed collector current: 400A Power dissipation: 600W Type of semiconductor module: IGBT Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS12045TV | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 45V; If: 60Ax2; ISOTOP; screw Max. forward voltage: 0.67V Load current: 60A x2 Max. off-state voltage: 45V Max. load current: 120A Max. forward impulse current: 0.9kA Type of semiconductor module: diode Semiconductor structure: double independent Case: ISOTOP Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS16045TV | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 45V; If: 80Ax2; ISOTOP; screw Max. forward voltage: 0.69V Load current: 80A x2 Max. off-state voltage: 45V Max. load current: 160A Max. forward impulse current: 0.9kA Type of semiconductor module: diode Semiconductor structure: double independent Case: ISOTOP Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS160H100TV | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 100V; If: 80Ax2; ISOTOP; screw Max. forward voltage: 0.68V Load current: 80A x2 Max. off-state voltage: 0.1kV Max. load current: 180A Max. forward impulse current: 1kA Type of semiconductor module: diode Semiconductor structure: double independent Case: ISOTOP Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRU1206-33CD Produktcode: 83106
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C
IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C
verfügbar: 12 St.
| Anzahl | Preis |
|---|---|
| 1+ | 0.55 EUR |
| 10+ | 0.47 EUR |
| APL502J |
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Hersteller: Microchip Technology
MOSFET Modules MOSFET Linear 500 V 52 A SOT-227
MOSFET Modules MOSFET Linear 500 V 52 A SOT-227
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 83.95 EUR |
| 10+ | 82.83 EUR |
| 25+ | 80.24 EUR |
| 100+ | 77.39 EUR |
| 250+ | 76.49 EUR |
| APT20M22JVR |
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Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 5 200 V 22 mOhm SOT-227
MOSFET Modules MOSFET MOS 5 200 V 22 mOhm SOT-227
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.01 EUR |
| 10+ | 45.94 EUR |
| 25+ | 41.66 EUR |
| APT2X100DQ100J |
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Hersteller: Microchip Technology
Rectifiers FRED DQ 1000 V 100 A Dual Anti-Parallel SOT-227
Rectifiers FRED DQ 1000 V 100 A Dual Anti-Parallel SOT-227
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 35.5 EUR |
| APT2X30DQ60J |
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Hersteller: Microchip Technology
Rectifiers FRED DQ 600 V 30 A Dual Anti-Parallel SOT-227
Rectifiers FRED DQ 600 V 30 A Dual Anti-Parallel SOT-227
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.84 EUR |
| APT2X31D20J |
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Hersteller: Microchip Technology
Rectifiers FRED D 200 V 30 A Dual Parallel SOT-227
Rectifiers FRED D 200 V 30 A Dual Parallel SOT-227
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 42.77 EUR |
| 10+ | 41.92 EUR |
| 100+ | 38.44 EUR |
| 250+ | 38.1 EUR |
| 500+ | 37.98 EUR |
| APT2X31D40J |
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Hersteller: Microchip Technology
Rectifiers FRED D 400 V 30 A Dual Parallel SOT-227
Rectifiers FRED D 400 V 30 A Dual Parallel SOT-227
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.88 EUR |
| 10+ | 28.69 EUR |
| 25+ | 26.58 EUR |
| 100+ | 26.56 EUR |
| APT2X31S20J |
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Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 883 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.07 EUR |
| 100+ | 26.06 EUR |
| APT30M40JVR |
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Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 5 300 V 40 mOhm SOT-227
MOSFET Modules MOSFET MOS 5 300 V 40 mOhm SOT-227
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.35 EUR |
| APT50M50JFLL |
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Hersteller: Microchip Technology
MOSFET Modules FREDFET MOS 7 500 V 50 mOhm SOT-227
MOSFET Modules FREDFET MOS 7 500 V 50 mOhm SOT-227
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 86.86 EUR |
| 10+ | 84.64 EUR |
| 25+ | 83.2 EUR |
| APT75GP120JDQ3 |
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Hersteller: Microchip Technology
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.09 EUR |
| 10+ | 66.42 EUR |
| 25+ | 64.59 EUR |
| 100+ | 60.24 EUR |
| APT75GP120JDQ3 |
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Hersteller: Microsemi
IGBT 1200V 128A 543W SOT227 Транзистори
IGBT 1200V 128A 543W SOT227 Транзистори
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 158.59 EUR |
| APT8030JVFR |
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Hersteller: Microchip Technology
MOSFET Modules FREDFET MOS 5 800 V 300 mOhm SOT-227
MOSFET Modules FREDFET MOS 5 800 V 300 mOhm SOT-227
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 62.06 EUR |
| 10+ | 58.54 EUR |
| 25+ | 57.34 EUR |
| 100+ | 52.48 EUR |
| APT80M60J |
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Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 8 600 V 80 A SOT-227
MOSFET Modules MOSFET MOS 8 600 V 80 A SOT-227
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 80.66 EUR |
| 10+ | 79.08 EUR |
| 100+ | 72.64 EUR |
| 250+ | 72.07 EUR |
| APT85GR120J |
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Hersteller: Microchip Technology
IGBTs IGBT MOS 8 1200 V 85 A SOT-227
IGBTs IGBT MOS 8 1200 V 85 A SOT-227
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 48.29 EUR |
| C40-058-AE |
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Hersteller: Ohmite
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active
auf Bestellung 2972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.16 EUR |
| 10+ | 10.77 EUR |
| 25+ | 10.26 EUR |
| 50+ | 9.88 EUR |
| 140+ | 9.36 EUR |
| 280+ | 9.02 EUR |
| 560+ | 8.69 EUR |
| 1120+ | 8.38 EUR |
| DH2x61-18A |
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Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 69.59 EUR |
| 10+ | 52.24 EUR |
| 100+ | 45.95 EUR |
| DSEI2X121-02A |
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Hersteller: IXYS
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 62.22 EUR |
| 10+ | 46.39 EUR |
| 100+ | 39.99 EUR |
| DSEI2X31-12B |
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Hersteller: IXYS
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
auf Bestellung 6057 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 43.42 EUR |
| 10+ | 31.79 EUR |
| 100+ | 31.45 EUR |
| DSEI2X61-06C |
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Hersteller: IXYS
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.65 EUR |
| 10+ | 40.44 EUR |
| 100+ | 34.03 EUR |
| DSEI2X61-10B |
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Hersteller: IXYS
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 61.81 EUR |
| 10+ | 46.08 EUR |
| 100+ | 39.67 EUR |
| DSEI2X61-12B |
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Hersteller: IXYS
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 61.04 EUR |
| 10+ | 45.47 EUR |
| 100+ | 39.05 EUR |
| GB2X50MPS12-227 |
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Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS
SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS
auf Bestellung 1747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 120.89 EUR |
| 10+ | 105.04 EUR |
| GHXS060A120S-D3 |
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Hersteller: SemiQ
Diode Modules 1200V, 60A, SOT-227 diode module
Diode Modules 1200V, 60A, SOT-227 diode module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 78.46 EUR |
| 10+ | 66.67 EUR |
| 100+ | 55.12 EUR |
| IXEN60N120 |
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NPT2 IGBT (Ic25=100 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 84.6 EUR |
| IXFN140N20P |
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Hersteller: IXYS
Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 50.76 EUR |
| 10+ | 37.4 EUR |
| 100+ | 31.02 EUR |
| IXFN180N20 |
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SOT-227B, HiPerFET, N-Channel MOSFET, Id=180A, Vdss=200V, -55...+150 Транзистори
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 101.21 EUR |
| IXFN360N10T |
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Hersteller: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 50.53 EUR |
| 10+ | 37.2 EUR |
| 100+ | 30.79 EUR |
| IXFN520N075T2 |
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Hersteller: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 821 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 62.73 EUR |
| 10+ | 46.8 EUR |
| 100+ | 40.4 EUR |
| IXFN64N50P |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.55 EUR |
| 10+ | 38.8 EUR |
| 100+ | 32.4 EUR |
| IXGN200N170 |
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Hersteller: IXYS
IGBTs SOT227 1700V 160A IGBT
IGBTs SOT227 1700V 160A IGBT
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 124.61 EUR |
| 10+ | 107.36 EUR |
| IXGN400N60B3 |
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Hersteller: IXYS
IGBT Modules Mid-Frequency Range PT IGBTs
IGBT Modules Mid-Frequency Range PT IGBTs
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 117.06 EUR |
| 10+ | 99.55 EUR |
| IXTN200N10L2 |
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Hersteller: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 86.26 EUR |
| 10+ | 65.59 EUR |
| 100+ | 59.87 EUR |
| IXTN500N20X4 |
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Hersteller: IXYS
MOSFET Modules 200V 1.99mohm 500A Ultra Junction X4-Class Power MOSFET in SOT-227B
MOSFET Modules 200V 1.99mohm 500A Ultra Junction X4-Class Power MOSFET in SOT-227B
auf Bestellung 452 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 84.83 EUR |
| 10+ | 70.75 EUR |
| 100+ | 60.54 EUR |
| IXTN600N04T2 |
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Hersteller: IXYS
Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 63.55 EUR |
| 10+ | 47.4 EUR |
| 100+ | 40.12 EUR |
| IXTN90N25L2 |
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Hersteller: IXYS
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 88.25 EUR |
| 10+ | 67.19 EUR |
| 100+ | 61.56 EUR |
| IXXN110N65C4H1 |
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Hersteller: IXYS
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.22 EUR |
| 10+ | 38.54 EUR |
| IXYN140N120A4 |
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Hersteller: IXYS
IGBTs SOT227 1200V 140A XPT
IGBTs SOT227 1200V 140A XPT
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 87.38 EUR |
| 10+ | 66.4 EUR |
| 100+ | 62.36 EUR |
| MSC025SMA120J |
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Hersteller: Microchip Technology
MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227
MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 76.75 EUR |
| 10+ | 74.55 EUR |
| 30+ | 73.9 EUR |
| 100+ | 67.39 EUR |
| MSC080SMA120J |
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Hersteller: Microchip Technology
MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227
MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 43.58 EUR |
| 10+ | 37.79 EUR |
| 30+ | 35.8 EUR |
| 100+ | 33.93 EUR |
| MSC2X51SDA070J |
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Hersteller: Microchip Technology
Diode Modules SIC SBD 700 V 50 A Dual Parallel SOT-227
Diode Modules SIC SBD 700 V 50 A Dual Parallel SOT-227
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 72.28 EUR |
| 10+ | 62.76 EUR |
| 30+ | 61.44 EUR |
| 100+ | 57.46 EUR |
| MUR2X060A02 |
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Hersteller: GeneSiC Semiconductor
Diode Modules 200V 120A Fwd Super Fast Recovery
Diode Modules 200V 120A Fwd Super Fast Recovery
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.54 EUR |
| PF2272-0R1J1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.1 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 mOhms
Description: RES CHAS MNT 0.1 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 mOhms
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 55.16 EUR |
| 20+ | 36.54 EUR |
| 40+ | 33.8 EUR |
| 60+ | 32.39 EUR |
| 100+ | 30.8 EUR |
| PF2272-0R2J1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 mOhms
Description: RES CHAS MNT 0.2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 mOhms
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.05 EUR |
| 20+ | 35.76 EUR |
| 40+ | 33.07 EUR |
| 60+ | 31.69 EUR |
| 100+ | 30.13 EUR |
| 260+ | 27.66 EUR |
| PF2272-0R5J1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 500 mOhms
Description: RES CHAS MNT 0.5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 500 mOhms
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.52 EUR |
| 20+ | 36.1 EUR |
| 40+ | 33.38 EUR |
| 60+ | 31.99 EUR |
| 100+ | 30.41 EUR |
| 260+ | 27.93 EUR |
| PF2272-100RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 100 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 Ohms
Description: RES CHAS MNT 100 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 Ohms
auf Bestellung 814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.06 EUR |
| 20+ | 35.1 EUR |
| 40+ | 32.45 EUR |
| 60+ | 31.09 EUR |
| 100+ | 29.55 EUR |
| 260+ | 27.13 EUR |
| 500+ | 25.75 EUR |
| PF2272-10RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 10 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 10 Ohms
Description: RES CHAS MNT 10 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 10 Ohms
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.37 EUR |
| 20+ | 35.99 EUR |
| 40+ | 33.28 EUR |
| 60+ | 31.89 EUR |
| 100+ | 30.32 EUR |
| 260+ | 27.84 EUR |
| 500+ | 26.44 EUR |
| PF2272-1RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 1 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 1 Ohms
Description: RES CHAS MNT 1 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 1 Ohms
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.21 EUR |
| 20+ | 35.87 EUR |
| 40+ | 33.17 EUR |
| 60+ | 31.79 EUR |
| 100+ | 30.22 EUR |
| 260+ | 27.75 EUR |
| PF2272-20RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 20 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 20 Ohms
Description: RES CHAS MNT 20 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 20 Ohms
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.77 EUR |
| 20+ | 35.57 EUR |
| 40+ | 32.89 EUR |
| 60+ | 31.51 EUR |
| 100+ | 29.96 EUR |
| 260+ | 27.5 EUR |
| PF2272-2RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 2 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 2 Ohms
Description: RES CHAS MNT 2 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 2 Ohms
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.05 EUR |
| 20+ | 35.76 EUR |
| 40+ | 33.07 EUR |
| 60+ | 31.68 EUR |
| 100+ | 30.12 EUR |
| 260+ | 27.66 EUR |
| PF2272-50RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 50 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 50 Ohms
Description: RES CHAS MNT 50 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 50 Ohms
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 70.51 EUR |
| 20+ | 47.2 EUR |
| 40+ | 43.77 EUR |
| 60+ | 42.01 EUR |
| 100+ | 40.02 EUR |
| PF2272-5RJ1 |
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Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 5 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 5 Ohms
Description: RES CHAS MNT 5 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 5 Ohms
auf Bestellung 1041 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.17 EUR |
| 20+ | 35.86 EUR |
| 40+ | 33.16 EUR |
| 60+ | 31.77 EUR |
| 100+ | 30.21 EUR |
| 260+ | 27.74 EUR |
| 500+ | 26.34 EUR |
| S4D80120S2 |
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Hersteller: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw
Load current: 41A x2
Max. off-state voltage: 1.2kV
Max. load current: 82A
Max. forward impulse current: 245A
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw
Load current: 41A x2
Max. off-state voltage: 1.2kV
Max. load current: 82A
Max. forward impulse current: 245A
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 52.7 EUR |
| 3+ | 47.5 EUR |
| 12+ | 41.87 EUR |
| SK2S120-100 |
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Hersteller: SMC Diode Solutions
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.46 EUR |
| 10+ | 20.98 EUR |
| STE53NC50 |
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Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 33A
Pulsed drain current: 212A
Power dissipation: 460W
Drain-source voltage: 500V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 33A
Pulsed drain current: 212A
Power dissipation: 460W
Drain-source voltage: 500V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 39.9 EUR |
| 5+ | 34.23 EUR |
| 10+ | 32.86 EUR |
| 20+ | 31.56 EUR |
| 50+ | 29.93 EUR |
| STE70NM60 |
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Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Polarisation: unipolar
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Drain current: 70A
Pulsed drain current: 44A
Power dissipation: 600W
Drain-source voltage: 600V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Polarisation: unipolar
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Drain current: 70A
Pulsed drain current: 44A
Power dissipation: 600W
Drain-source voltage: 600V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 50.74 EUR |
| STGE200NB60S |
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Hersteller: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Collector current: 150A
Pulsed collector current: 400A
Power dissipation: 600W
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 150A; ISOTOP; 600W
Gate-emitter voltage: ±20V
Max. off-state voltage: 0.6kV
Collector current: 150A
Pulsed collector current: 400A
Power dissipation: 600W
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| STPS12045TV |
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Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; ISOTOP; screw
Max. forward voltage: 0.67V
Load current: 60A x2
Max. off-state voltage: 45V
Max. load current: 120A
Max. forward impulse current: 0.9kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; ISOTOP; screw
Max. forward voltage: 0.67V
Load current: 60A x2
Max. off-state voltage: 45V
Max. load current: 120A
Max. forward impulse current: 0.9kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 21.22 EUR |
| 5+ | 19.92 EUR |
| 10+ | 19.85 EUR |
| STPS16045TV |
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Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; ISOTOP; screw
Max. forward voltage: 0.69V
Load current: 80A x2
Max. off-state voltage: 45V
Max. load current: 160A
Max. forward impulse current: 0.9kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; ISOTOP; screw
Max. forward voltage: 0.69V
Load current: 80A x2
Max. off-state voltage: 45V
Max. load current: 160A
Max. forward impulse current: 0.9kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 25.37 EUR |
| 4+ | 23.65 EUR |
| STPS160H100TV |
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Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 80Ax2; ISOTOP; screw
Max. forward voltage: 0.68V
Load current: 80A x2
Max. off-state voltage: 0.1kV
Max. load current: 180A
Max. forward impulse current: 1kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 80Ax2; ISOTOP; screw
Max. forward voltage: 0.68V
Load current: 80A x2
Max. off-state voltage: 0.1kV
Max. load current: 180A
Max. forward impulse current: 1kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 25.17 EUR |
| 4+ | 22.85 EUR |
| 5+ | 21.45 EUR |
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