Hersteller: IR
IC > IC Netzteile
Gehäuse: SOT-227
Eigenschaften: 1A 3,3 Volt VERY LOW DROPOUT POSITIVE FIXED AND ADJUSTABLE REGULATORS
Spannung, eing., V: 12V
I-ausg., A: 1A
Temperaturbereich: 0…+135°C

Hersteller: Microchip Technology
MOSFET Modules MOSFET Linear 500 V 52 A SOT-227

Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 5 200 V 22 mOhm SOT-227

Hersteller: Microchip Technology
Rectifiers FRED DQ 1000 V 100 A Dual Anti-Parallel SOT-227

Hersteller: Microchip Technology
Rectifiers FRED DQ 1200 V 100 A Dual Anti-Parallel SOT-227

Hersteller: Microchip Technology
Rectifiers FRED D 1000 V 100 A Dual Parallel SOT-227

Hersteller: Microchip Technology
Discrete Semiconductor Modules FRED D 400 V 30 A Dual Anti-Parallel SOT-227

Hersteller: Microchip Technology
Rectifiers FRED D 200 V 30 A Dual Parallel SOT-227

Hersteller: Microchip Technology
Rectifiers FRED D 400 V 30 A Dual Parallel SOT-227

Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V

Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 5 300 V 40 mOhm SOT-227

Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 7 500 V 100 mOhm SOT-227

Hersteller: Microchip Technology
MOSFET Modules FREDFET MOS 7 500 V 50 mOhm SOT-227

Hersteller: Microchip Technology
IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227

Hersteller: Microsemi
IGBT 1200V 128A 543W SOT227 Група товару: Транзистори Од. вим: шт

Hersteller: Microchip Technology
MOSFET Modules MOSFET MOS 8 600 V 80 A SOT-227

Hersteller: Microchip Technology
IGBTs IGBT MOS 8 1200 V 85 A SOT-227

Hersteller: Ohmite
Description: HEATSINK FOR TO-247 TO-264
Packaging: Box
Material: Aluminum
Length: 2.283" (58.00mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.724" (43.79mm)
Package Cooled: TO-247, TO-264, SOT-227
Attachment Method: Clip and Board Mounts
Fin Height: 1.260" (32.00mm)
Material Finish: Black Anodized
Part Status: Active

Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V

Hersteller: IXYS
Description: DIODE MOD GP 200V 123A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 123A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V

Hersteller: IXYS
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V

Hersteller: IXYS
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V

Hersteller: IXYS
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V

Hersteller: IXYS
Description: DIODE MOD GP 1200V 52A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V

Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS

Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS

NPT2 IGBT (Ic25=100 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Група товару: Транзистори Од. вим: шт

Hersteller: IXYS
Description: MOSFET N-CH 200V 115A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V

SOT-227B, HiPerFET, N-Channel MOSFET, Id=180A, Vdss=200V, -55...+150 Група товару: Транзистори Од. вим: шт

Hersteller: IXYS
MOSFET Modules HiperFET Pwr MOSFET 70V, 340A

Hersteller: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V

Hersteller: IXYS
MOSFET Modules MBLOC 150V 400A N-CH X3CLASS

Hersteller: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V

Hersteller: IXYS
IGBT Modules Mid-Frequency Range PT IGBTs

Hersteller: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Hersteller: IXYS
MOSFET Modules MBLOC 150V 400A N-CH X4CLASS

Hersteller: IXYS
MOSFET Modules 200V 1.99mohm 500A Ultra Junction X4-Class Power MOSFET in SOT-227B

Hersteller: IXYS
Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V

Hersteller: IXYS
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Hersteller: IXYS
IGBT Modules 650V/234A Trench IGBT GenX4 XPT

Hersteller: IXYS
IGBTs SOT227 1200V 140A XPT

Hersteller: Microchip Technology
MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227

Hersteller: Microchip Technology
Diode Modules SIC SBD 700 V 50 A Dual Parallel SOT-227

Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227

Hersteller: GeneSiC Semiconductor
Diode Modules 200V 120A Fwd Super Fast Recovery

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.1 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 mOhms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.2 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 200 mOhms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 0.5 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 500 mOhms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 100 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 100 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 10 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 10 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 1 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 1 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 20 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 20 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 2 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 2 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 50 OHM 5% 200W
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Packaging: Tube
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 50 Ohms

Hersteller: Riedon products by Bourns
Description: RES CHAS MNT 5 OHM 5% 200W
Packaging: Tube
Power (Watts): 200W
Tolerance: ±5%
Lead Style: M4 Threaded
Features: Current Sense, Flame Proof, Moisture Resistant, Pulse Withstanding, Safety
Package / Case: SOT-227-4
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 1.496" L x 0.984" W (38.00mm x 25.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum Oxide
Height - Seated (Max): 0.484" (12.30mm)
Resistance: 5 Ohms

Hersteller: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227; screw
Load current: 41A x2
Max. off-state voltage: 1.2kV
Max. load current: 82A
Max. forward impulse current: 245A
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw

Hersteller: SMC Diode Solutions
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V

Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W
Case: ISOTOP
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 33A
Pulsed drain current: 212A
Drain-source voltage: 500V
Power dissipation: 460W

Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Case: ISOTOP
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 70A
Pulsed drain current: 44A
Drain-source voltage: 600V
Power dissipation: 600W