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GCMS004A120S7B1 GCMS004A120S7B1 SemiQ GCMS004A120S7B1.pdf Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
GCMS008A120B1B1 GCMS008A120B1B1 SemiQ GCMS008A120B1B1.pdf Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
GCMS020A120S1-E1 GCMS020A120S1-E1 SemiQ GCMS020A120S1_E1-1951826.pdf Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+213.33 EUR
10+ 190.91 EUR
20+ 187.88 EUR
50+ 183.22 EUR
GCMS020A120S1-E1 GCMS020A120S1-E1 SemiQ GCMS020A120S1-E1.pdf Description: SIC MOSFET/ SBD MODULE SOT-227 C
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ GCMS020B120S1-E1.pdf Description: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
1+83.64 EUR
10+ 76.03 EUR
GCMS040A120B1H1 SemiQ GCMS040A120B1H1.pdf Description: SIC MOSFET FULL BRIDGE MODULE B1
Produkt ist nicht verfügbar
GCMS040A120B3C1 SemiQ GCMS040A120B3C1.pdf Description: SIC MOSFET 6-PACK MODULE B2_EASY
Produkt ist nicht verfügbar
GCMS040A120S1-E1 SemiQ GCMS040A120S1-E1.pdf Description: SIC MOSFET/ SBD MODULE SOT-227 C
Produkt ist nicht verfügbar
GCMS040A120S1-E1 GCMS040A120S1-E1 SemiQ GCMS040A120S1_E1-1916658.pdf Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
Produkt ist nicht verfügbar
GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ GCMS040B120S1_E1-3105103.pdf Discrete Semiconductor Modules
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
1+55.49 EUR
10+ 47.13 EUR
20+ 45.5 EUR
50+ 44.09 EUR
100+ 42.68 EUR
200+ 39.83 EUR
500+ 36.63 EUR
GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ GCMS040B120S1-E1.pdf Description: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.52 EUR
10+ 48.45 EUR
GCMS080A120S1-E1 GCMS080A120S1-E1 SemiQ GCMS080A120S1_E1-1916710.pdf Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
Produkt ist nicht verfügbar
GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ GCMS080B120S1_E1-3178404.pdf Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.27 EUR
10+ 35.06 EUR
20+ 33.56 EUR
50+ 32.51 EUR
100+ 31.45 EUR
200+ 29.36 EUR
500+ 27 EUR
GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ GCMS080B120S1-E1.pdf Description: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.2 EUR
10+ 35.72 EUR
GCMX020A120B2B1P GCMX020A120B2B1P SemiQ GCMX020A120B2B1P-3393646.pdf Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+96.04 EUR
10+ 87.33 EUR
25+ 84.39 EUR
50+ 81.49 EUR
100+ 78.57 EUR
250+ 75.64 EUR
500+ 74.94 EUR
GCMX020A120B3H1P GCMX020A120B3H1P SemiQ GCMX020A120B3H1P_rev1_0-3393875.pdf Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ GCMX020B120S1-E1.pdf Description: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.49 EUR
10+ 59.25 EUR
GCMX040A120B2H1P GCMX040A120B2H1P SemiQ GCMX040A120B2H1P_rev1.0.pdf Description: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
Produkt ist nicht verfügbar
GCMX040A120B2H1P GCMX040A120B2H1P SemiQ GCMX040A120B2H1P_rev1_0-3393784.pdf Discrete Semiconductor Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
GCMX040A120B3H1P GCMX040A120B3H1P SemiQ GCMX040A120B3H1P_rev1_1-3393548.pdf Discrete Semiconductor Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+101.2 EUR
10+ 92.01 EUR
25+ 88.93 EUR
50+ 85.85 EUR
100+ 82.77 EUR
250+ 79.71 EUR
500+ 78.94 EUR
GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ GCMX040B120S1_E1-3105082.pdf Discrete Semiconductor Modules
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.6 EUR
10+ 39.6 EUR
20+ 38.28 EUR
50+ 37.08 EUR
100+ 35.89 EUR
200+ 33.51 EUR
500+ 30.82 EUR
GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ GCMX040B120S1-E1.pdf Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.52 EUR
10+ 41.33 EUR
100+ 36.15 EUR
GCMX080A120B2H1P GCMX080A120B2H1P SemiQ GCMX080A120B2H1P.pdf Description: SIC 1200V 80M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
1+67.57 EUR
10+ 60.21 EUR
GCMX080A120B2H1P GCMX080A120B2H1P SemiQ GCMX080A120B2H1P-3393513.pdf Discrete Semiconductor Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+67.11 EUR
10+ 59.8 EUR
25+ 56.23 EUR
50+ 54.37 EUR
100+ 52.48 EUR
250+ 50.62 EUR
500+ 48.26 EUR
GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ GCMX080B120S1_E1-3178393.pdf Discrete Semiconductor Modules SiC 1200V 80mO MOSFET SOT-227
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.59 EUR
10+ 31.08 EUR
20+ 30.13 EUR
50+ 29.2 EUR
100+ 28.27 EUR
200+ 26.36 EUR
500+ 24.25 EUR
GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ GCMX080B120S1-E1.pdf Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.61 EUR
10+ 32.54 EUR
GDP60Z120E GDP60Z120E SemiQ GDP60Z120E.pdf Description: DIODE SCHOTT 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
GHIS020A060B1P2 SemiQ GHIS020A060B1P2.pdf Description: SI IGBT & SIC SBD HYBRID MODULES
Produkt ist nicht verfügbar
GHIS040A120S-A2 GHIS040A120S-A2 SemiQ GHIS040A120S-A2.pdf Description: IGBT MOD 1200V 80A 480W SOT227
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
GHIS060A060S-A1 GHIS060A060S-A1 SemiQ GHIS060A060S-A1.pdf Description: IGBT MOD 600V 120A 297W SOT227
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
GHIS060A060S-A2 GHIS060A060S-A2 SemiQ GHIS060A060S-A2.pdf Description: IGBT MOD 600V 120A 312W SOT227
Produkt ist nicht verfügbar
GHIS060A120S-A1 GHIS060A120S-A1 SemiQ GHIS060A120S-A1.pdf Description: IGBT MOD 1200V 120A 680W SOT227
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
GHIS060A120S-A2 GHIS060A120S-A2 SemiQ GHIS060A120S-A2.pdf Description: IGBT MOD 1200V 120A 680W SOT227
Produkt ist nicht verfügbar
GHXS010A060S-D3 GHXS010A060S-D3 SemiQ GHXS010A060S_D3-1915596.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 10A
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.91 EUR
10+ 28.35 EUR
20+ 28.16 EUR
50+ 27.28 EUR
100+ 24.78 EUR
200+ 24.41 EUR
500+ 21.16 EUR
GHXS010A060S-D3 GHXS010A060S-D3 SemiQ GHXS010A060S-D3.pdf Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.35 EUR
10+ 27.86 EUR
GHXS015A120S-D3 GHXS015A120S-D3 SemiQ GHXS015A120S_D3-1916837.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
GHXS015A120S-D3 GHXS015A120S-D3 SemiQ GHXS015A120S-D3.pdf Description: DIODE SCHOT SBD 1200V 15A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+70.21 EUR
GHXS020A060S-D3 GHXS020A060S-D3 SemiQ GHXS020A060S_D3-1915589.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 20A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.17 EUR
10+ 41.03 EUR
20+ 39.79 EUR
50+ 39.27 EUR
100+ 35.83 EUR
200+ 34.74 EUR
500+ 33.48 EUR
GHXS020A060S-D3 GHXS020A060S-D3 SemiQ GHXS020A060S-D3.pdf Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
GHXS030A060S-D1E GHXS030A060S-D1E SemiQ GHXS030A060S-D1E.pdf Description: BRIDGE RECT 1P 600V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.93 EUR
10+ 54.29 EUR
GHXS030A060S-D1E GHXS030A060S-D1E SemiQ GHXS030A060S_D1E-1916672.pdf Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 600V 30A
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
1+104.74 EUR
10+ 95.22 EUR
20+ 92.03 EUR
50+ 88.86 EUR
100+ 85.69 EUR
200+ 82.51 EUR
500+ 79.36 EUR
GHXS030A060S-D3 GHXS030A060S-D3 SemiQ GHXS030A060S-D3.pdf Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
GHXS030A060S-D3 GHXS030A060S-D3 SemiQ GHXS030A060S_D3-1916863.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 30A
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.11 EUR
10+ 39.18 EUR
20+ 36.57 EUR
50+ 35.43 EUR
100+ 34.27 EUR
200+ 32 EUR
500+ 29.43 EUR
GHXS030A120S-D1E GHXS030A120S-D1E SemiQ GHXS030A120S-D1E.pdf Description: BRIDGE RECT 1P 1.2KV 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+83.69 EUR
10+ 74.57 EUR
GHXS030A120S-D1E GHXS030A120S-D1E SemiQ GHXS030A120S_D1E-1916767.pdf Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+176.67 EUR
10+ 167.53 EUR
30+ 165.02 EUR
100+ 158.31 EUR
250+ 155.32 EUR
GHXS030A120S-D3 GHXS030A120S-D3 SemiQ GHXS030A120S_D3-1915598.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
1+112.27 EUR
10+ 105.46 EUR
30+ 103.56 EUR
100+ 94.49 EUR
250+ 92.72 EUR
GHXS030A120S-D3 GHXS030A120S-D3 SemiQ GHXS030A120S-D3.pdf Description: DIODE SCHOTKY 1200V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+119.43 EUR
10+ 112.2 EUR
GHXS045A120S-D3 GHXS045A120S-D3 SemiQ GHXS045A120S_D3-1916832.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+158.73 EUR
10+ 150.55 EUR
30+ 146.43 EUR
100+ 140.08 EUR
GHXS045A120S-D3 GHXS045A120S-D3 SemiQ GHXS045A120S-D3.pdf Description: DIODE SCHOT SBD 1200V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+158.75 EUR
10+ 150.56 EUR
GHXS050A060S-D3 GHXS050A060S-D3 SemiQ GHXS050A060S-D3.pdf Description: DIODE SCHOTT SBD 600V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+92.14 EUR
GHXS050A060S-D3 GHXS050A060S-D3 SemiQ GHXS050A060S_D3-1916603.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 50A
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+92.58 EUR
10+ 88.7 EUR
30+ 85.41 EUR
100+ 77.92 EUR
250+ 76.47 EUR
GHXS050A170S-D3 GHXS050A170S-D3 SemiQ GHXS050A170S_D3-1916809.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1700V 50A
auf Bestellung 15 Stücke:
Lieferzeit 114-118 Tag (e)
1+87.67 EUR
10+ 78.11 EUR
20+ 73.46 EUR
50+ 71 EUR
100+ 68.57 EUR
200+ 66.11 EUR
500+ 63.06 EUR
GHXS050A170S-D3 GHXS050A170S-D3 SemiQ Description: DIODE MOD SIC 1700V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
1+278.89 EUR
10+ 261.21 EUR
GHXS050B065S-D3 GHXS050B065S-D3 SemiQ GHXS050B065S-D3.pdf Description: DIODE MOD SIC SCHOT 650V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 125 µA @ 650 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
1+49.86 EUR
10+ 44.31 EUR
GHXS050B065S-D3 GHXS050B065S-D3 SemiQ GHXS050B065S_D3-1916884.pdf Discrete Semiconductor Modules SiC SBD 650V 50A SiC Power Modules
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+48.72 EUR
10+ 43.28 EUR
20+ 41.8 EUR
50+ 40.88 EUR
100+ 37.84 EUR
200+ 36.57 EUR
500+ 34.58 EUR
GHXS050B120S-D3 GHXS050B120S-D3 SemiQ GHXS050B120S-D3.pdf Description: DIODE MOD SIC 1200V 101A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 101A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+71.02 EUR
GHXS050B120S-D3 GHXS050B120S-D3 SemiQ GHXS050B120S_D3-1916892.pdf Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+72.97 EUR
10+ 62.02 EUR
20+ 59.93 EUR
50+ 57.92 EUR
100+ 55.93 EUR
200+ 53.93 EUR
500+ 51.43 EUR
GHXS060B120S-D3 GHXS060B120S-D3 SemiQ GHXS060B120S_D3-1916721.pdf Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+135.87 EUR
10+ 127.67 EUR
GHXS060B120S-D3 GHXS060B120S-D3 SemiQ Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+152.64 EUR
10+ 139.36 EUR
GHXS100B065S-D3 GHXS100B065S-D3 SemiQ GHXS100B065S-D3.pdf Description: DIODE MOD SIC 650V 193A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.25 EUR
10+ 54.58 EUR
GCMS004A120S7B1 GCMS004A120S7B1.pdf
GCMS004A120S7B1
Hersteller: SemiQ
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
GCMS008A120B1B1 GCMS008A120B1B1.pdf
GCMS008A120B1B1
Hersteller: SemiQ
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
GCMS020A120S1-E1 GCMS020A120S1_E1-1951826.pdf
GCMS020A120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+213.33 EUR
10+ 190.91 EUR
20+ 187.88 EUR
50+ 183.22 EUR
GCMS020A120S1-E1 GCMS020A120S1-E1.pdf
GCMS020A120S1-E1
Hersteller: SemiQ
Description: SIC MOSFET/ SBD MODULE SOT-227 C
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
GCMS020B120S1-E1 GCMS020B120S1-E1.pdf
GCMS020B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+83.64 EUR
10+ 76.03 EUR
GCMS040A120B1H1 GCMS040A120B1H1.pdf
Hersteller: SemiQ
Description: SIC MOSFET FULL BRIDGE MODULE B1
Produkt ist nicht verfügbar
GCMS040A120B3C1 GCMS040A120B3C1.pdf
Hersteller: SemiQ
Description: SIC MOSFET 6-PACK MODULE B2_EASY
Produkt ist nicht verfügbar
GCMS040A120S1-E1 GCMS040A120S1-E1.pdf
Hersteller: SemiQ
Description: SIC MOSFET/ SBD MODULE SOT-227 C
Produkt ist nicht verfügbar
GCMS040A120S1-E1 GCMS040A120S1_E1-1916658.pdf
GCMS040A120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
Produkt ist nicht verfügbar
GCMS040B120S1-E1 GCMS040B120S1_E1-3105103.pdf
GCMS040B120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+55.49 EUR
10+ 47.13 EUR
20+ 45.5 EUR
50+ 44.09 EUR
100+ 42.68 EUR
200+ 39.83 EUR
500+ 36.63 EUR
GCMS040B120S1-E1 GCMS040B120S1-E1.pdf
GCMS040B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+54.52 EUR
10+ 48.45 EUR
GCMS080A120S1-E1 GCMS080A120S1_E1-1916710.pdf
GCMS080A120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
Produkt ist nicht verfügbar
GCMS080B120S1-E1 GCMS080B120S1_E1-3178404.pdf
GCMS080B120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+41.27 EUR
10+ 35.06 EUR
20+ 33.56 EUR
50+ 32.51 EUR
100+ 31.45 EUR
200+ 29.36 EUR
500+ 27 EUR
GCMS080B120S1-E1 GCMS080B120S1-E1.pdf
GCMS080B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.2 EUR
10+ 35.72 EUR
GCMX020A120B2B1P GCMX020A120B2B1P-3393646.pdf
GCMX020A120B2B1P
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+96.04 EUR
10+ 87.33 EUR
25+ 84.39 EUR
50+ 81.49 EUR
100+ 78.57 EUR
250+ 75.64 EUR
500+ 74.94 EUR
GCMX020A120B3H1P GCMX020A120B3H1P_rev1_0-3393875.pdf
GCMX020A120B3H1P
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
GCMX020B120S1-E1 GCMX020B120S1-E1.pdf
GCMX020B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+66.49 EUR
10+ 59.25 EUR
GCMX040A120B2H1P GCMX040A120B2H1P_rev1.0.pdf
GCMX040A120B2H1P
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
Produkt ist nicht verfügbar
GCMX040A120B2H1P GCMX040A120B2H1P_rev1_0-3393784.pdf
GCMX040A120B2H1P
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
GCMX040A120B3H1P GCMX040A120B3H1P_rev1_1-3393548.pdf
GCMX040A120B3H1P
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+101.2 EUR
10+ 92.01 EUR
25+ 88.93 EUR
50+ 85.85 EUR
100+ 82.77 EUR
250+ 79.71 EUR
500+ 78.94 EUR
GCMX040B120S1-E1 GCMX040B120S1_E1-3105082.pdf
GCMX040B120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+46.6 EUR
10+ 39.6 EUR
20+ 38.28 EUR
50+ 37.08 EUR
100+ 35.89 EUR
200+ 33.51 EUR
500+ 30.82 EUR
GCMX040B120S1-E1 GCMX040B120S1-E1.pdf
GCMX040B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+46.52 EUR
10+ 41.33 EUR
100+ 36.15 EUR
GCMX080A120B2H1P GCMX080A120B2H1P.pdf
GCMX080A120B2H1P
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+67.57 EUR
10+ 60.21 EUR
GCMX080A120B2H1P GCMX080A120B2H1P-3393513.pdf
GCMX080A120B2H1P
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+67.11 EUR
10+ 59.8 EUR
25+ 56.23 EUR
50+ 54.37 EUR
100+ 52.48 EUR
250+ 50.62 EUR
500+ 48.26 EUR
GCMX080B120S1-E1 GCMX080B120S1_E1-3178393.pdf
GCMX080B120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET SOT-227
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+36.59 EUR
10+ 31.08 EUR
20+ 30.13 EUR
50+ 29.2 EUR
100+ 28.27 EUR
200+ 26.36 EUR
500+ 24.25 EUR
GCMX080B120S1-E1 GCMX080B120S1-E1.pdf
GCMX080B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+36.61 EUR
10+ 32.54 EUR
GDP60Z120E GDP60Z120E.pdf
GDP60Z120E
Hersteller: SemiQ
Description: DIODE SCHOTT 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
GHIS020A060B1P2 GHIS020A060B1P2.pdf
Hersteller: SemiQ
Description: SI IGBT & SIC SBD HYBRID MODULES
Produkt ist nicht verfügbar
GHIS040A120S-A2 GHIS040A120S-A2.pdf
GHIS040A120S-A2
Hersteller: SemiQ
Description: IGBT MOD 1200V 80A 480W SOT227
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
GHIS060A060S-A1 GHIS060A060S-A1.pdf
GHIS060A060S-A1
Hersteller: SemiQ
Description: IGBT MOD 600V 120A 297W SOT227
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
GHIS060A060S-A2 GHIS060A060S-A2.pdf
GHIS060A060S-A2
Hersteller: SemiQ
Description: IGBT MOD 600V 120A 312W SOT227
Produkt ist nicht verfügbar
GHIS060A120S-A1 GHIS060A120S-A1.pdf
GHIS060A120S-A1
Hersteller: SemiQ
Description: IGBT MOD 1200V 120A 680W SOT227
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
GHIS060A120S-A2 GHIS060A120S-A2.pdf
GHIS060A120S-A2
Hersteller: SemiQ
Description: IGBT MOD 1200V 120A 680W SOT227
Produkt ist nicht verfügbar
GHXS010A060S-D3 GHXS010A060S_D3-1915596.pdf
GHXS010A060S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 10A
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.91 EUR
10+ 28.35 EUR
20+ 28.16 EUR
50+ 27.28 EUR
100+ 24.78 EUR
200+ 24.41 EUR
500+ 21.16 EUR
GHXS010A060S-D3 GHXS010A060S-D3.pdf
GHXS010A060S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.35 EUR
10+ 27.86 EUR
GHXS015A120S-D3 GHXS015A120S_D3-1916837.pdf
GHXS015A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
GHXS015A120S-D3 GHXS015A120S-D3.pdf
GHXS015A120S-D3
Hersteller: SemiQ
Description: DIODE SCHOT SBD 1200V 15A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+70.21 EUR
GHXS020A060S-D3 GHXS020A060S_D3-1915589.pdf
GHXS020A060S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 20A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+41.17 EUR
10+ 41.03 EUR
20+ 39.79 EUR
50+ 39.27 EUR
100+ 35.83 EUR
200+ 34.74 EUR
500+ 33.48 EUR
GHXS020A060S-D3 GHXS020A060S-D3.pdf
GHXS020A060S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
GHXS030A060S-D1E GHXS030A060S-D1E.pdf
GHXS030A060S-D1E
Hersteller: SemiQ
Description: BRIDGE RECT 1P 600V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+60.93 EUR
10+ 54.29 EUR
GHXS030A060S-D1E GHXS030A060S_D1E-1916672.pdf
GHXS030A060S-D1E
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 600V 30A
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+104.74 EUR
10+ 95.22 EUR
20+ 92.03 EUR
50+ 88.86 EUR
100+ 85.69 EUR
200+ 82.51 EUR
500+ 79.36 EUR
GHXS030A060S-D3 GHXS030A060S-D3.pdf
GHXS030A060S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
GHXS030A060S-D3 GHXS030A060S_D3-1916863.pdf
GHXS030A060S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 30A
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+44.11 EUR
10+ 39.18 EUR
20+ 36.57 EUR
50+ 35.43 EUR
100+ 34.27 EUR
200+ 32 EUR
500+ 29.43 EUR
GHXS030A120S-D1E GHXS030A120S-D1E.pdf
GHXS030A120S-D1E
Hersteller: SemiQ
Description: BRIDGE RECT 1P 1.2KV 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+83.69 EUR
10+ 74.57 EUR
GHXS030A120S-D1E GHXS030A120S_D1E-1916767.pdf
GHXS030A120S-D1E
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+176.67 EUR
10+ 167.53 EUR
30+ 165.02 EUR
100+ 158.31 EUR
250+ 155.32 EUR
GHXS030A120S-D3 GHXS030A120S_D3-1915598.pdf
GHXS030A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+112.27 EUR
10+ 105.46 EUR
30+ 103.56 EUR
100+ 94.49 EUR
250+ 92.72 EUR
GHXS030A120S-D3 GHXS030A120S-D3.pdf
GHXS030A120S-D3
Hersteller: SemiQ
Description: DIODE SCHOTKY 1200V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+119.43 EUR
10+ 112.2 EUR
GHXS045A120S-D3 GHXS045A120S_D3-1916832.pdf
GHXS045A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+158.73 EUR
10+ 150.55 EUR
30+ 146.43 EUR
100+ 140.08 EUR
GHXS045A120S-D3 GHXS045A120S-D3.pdf
GHXS045A120S-D3
Hersteller: SemiQ
Description: DIODE SCHOT SBD 1200V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+158.75 EUR
10+ 150.56 EUR
GHXS050A060S-D3 GHXS050A060S-D3.pdf
GHXS050A060S-D3
Hersteller: SemiQ
Description: DIODE SCHOTT SBD 600V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+92.14 EUR
GHXS050A060S-D3 GHXS050A060S_D3-1916603.pdf
GHXS050A060S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 50A
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+92.58 EUR
10+ 88.7 EUR
30+ 85.41 EUR
100+ 77.92 EUR
250+ 76.47 EUR
GHXS050A170S-D3 GHXS050A170S_D3-1916809.pdf
GHXS050A170S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1700V 50A
auf Bestellung 15 Stücke:
Lieferzeit 114-118 Tag (e)
Anzahl Preis ohne MwSt
1+87.67 EUR
10+ 78.11 EUR
20+ 73.46 EUR
50+ 71 EUR
100+ 68.57 EUR
200+ 66.11 EUR
500+ 63.06 EUR
GHXS050A170S-D3
GHXS050A170S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1700V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+278.89 EUR
10+ 261.21 EUR
GHXS050B065S-D3 GHXS050B065S-D3.pdf
GHXS050B065S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC SCHOT 650V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 125 µA @ 650 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+49.86 EUR
10+ 44.31 EUR
GHXS050B065S-D3 GHXS050B065S_D3-1916884.pdf
GHXS050B065S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD 650V 50A SiC Power Modules
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+48.72 EUR
10+ 43.28 EUR
20+ 41.8 EUR
50+ 40.88 EUR
100+ 37.84 EUR
200+ 36.57 EUR
500+ 34.58 EUR
GHXS050B120S-D3 GHXS050B120S-D3.pdf
GHXS050B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 101A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 101A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.02 EUR
GHXS050B120S-D3 GHXS050B120S_D3-1916892.pdf
GHXS050B120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+72.97 EUR
10+ 62.02 EUR
20+ 59.93 EUR
50+ 57.92 EUR
100+ 55.93 EUR
200+ 53.93 EUR
500+ 51.43 EUR
GHXS060B120S-D3 GHXS060B120S_D3-1916721.pdf
GHXS060B120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+135.87 EUR
10+ 127.67 EUR
GHXS060B120S-D3
GHXS060B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+152.64 EUR
10+ 139.36 EUR
GHXS100B065S-D3 GHXS100B065S-D3.pdf
GHXS100B065S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 650V 193A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+61.25 EUR
10+ 54.58 EUR
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