| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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GCMS004A120S7B1 | SemiQ |
Description: SIC MOSFET/SBD HALF BRIDGE MODUL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMS008A120B1B1 | SemiQ |
Description: SIC MOSFET/SBD HALF BRIDGE MODUL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMS008C120S1-E1 | SemiQ |
MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMS008C120S1-E1 | SemiQ |
Description: GEN3 1200V 8M SIC MOSFET & SBDPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 189A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V Power Dissipation (Max): 536W (Tc) Vgs(th) (Max) @ Id: 4V @ 40mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS010B120S1-E1 | SemiQ |
Description: 1700V, 15M SIC MOSFET MODULE, SOPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Power Dissipation (Max): 652W (Tc) Vgs(th) (Max) @ Id: 4V @ 40mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 416 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 10878 pF @ 1000 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS016C120S1-E1 | SemiQ |
Description: GEN3 1200V 16M SIC MOSFET & SBDPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V Power Dissipation (Max): 303W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6796 pF @ 1000 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS020A120S1-E1 | SemiQ |
Description: SIC MOSFET/ SBD MODULE SOT-227 C |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMS020A120S1-E1 | SemiQ |
Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS020B120S1-E1 | SemiQ |
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMS020B120S1-E1 | SemiQ |
Description: SIC 1200V 20M MOSFET & 50A SBD SPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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| GCMS040A120B1H1 | SemiQ |
Description: SIC MOSFET FULL BRIDGE MODULE B1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GCMS040A120B3C1 | SemiQ |
Description: SIC MOSFET 6-PACK MODULE B2_EASY |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GCMS040A120S1-E1 | SemiQ |
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GCMS040A120S1-E1 | SemiQ |
Description: SIC MOSFET/ SBD MODULE SOT-227 C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GCMS040B120S1-E1 | SemiQ |
Description: SIC 1200V 40M MOSFET & 15A SBD SPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS040B120S1-E1 | SemiQ |
MOSFET Modules 1200V SiC COPACK Power Module |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS040C120S1-E1 | SemiQ |
Description: GEN3 1200V 40M SIC MOSFET & SBDPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 1000 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS080A120S1-E1 | SemiQ |
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMS080B120S1-E1 | SemiQ |
Description: SIC 1200V 80M MOSFET & 10A SBD SPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS080B120S1-E1 | SemiQ |
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227 |
auf Bestellung 759 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS080C120S1-E1 | SemiQ |
Description: GEN3 1200V 80M SIC MOSFET & SBDPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1332 pF @ 1000 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMS080C120S1-E1 | SemiQ |
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX003A120S3B1-N | SemiQ |
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| GCMX003A120S7B1 | SemiQ |
Description: 1200V 3M SIC HALF BRIDGE 62MM MOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.546kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 529A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V Vgs(th) (Max) @ Id: 4V @ 120mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GCMX005A120S3B1-N | SemiQ |
Description: 1200V, 5M SIC MOSFET HALF BRIDGEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.531kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 424A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V Vgs(th) (Max) @ Id: 4V @ 80mA |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX010A120B2B1P | SemiQ |
Description: SIC 1200V 10M MOSFET HALF-BRIDGEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 750W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 214A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V Vgs(th) (Max) @ Id: 4V @ 40mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX010A120B2B1P | SemiQ |
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX010A120B3B1P | SemiQ |
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX010A120B3B1P | SemiQ |
Description: SIC 1200V 10M MOSFET HALF-BRIDGEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 577W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Vgs(th) (Max) @ Id: 4V @ 40mA |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX010A120B3H1P | SemiQ |
MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX010B120S1-E1 | SemiQ |
Description: 1200V, 10M SIC MOSFET MODULE, SOPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Power Dissipation (Max): 652W (Tc) Vgs(th) (Max) @ Id: 4V @ 40mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 418 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 10864 pF @ 1000 V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX015A170S1-E1 | SemiQ |
Description: SIC MOSFET MOD Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V Power Dissipation (Max): 652W (Tc) Vgs(th) (Max) @ Id: 4V @ 40mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 12803 pF @ 1.2 kV |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX016C120S1-E1 | SemiQ |
Description: GEN3 1200V 16M SIC MOSFET MODULEPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V Power Dissipation (Max): 303W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX020A120B2B1P | SemiQ |
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX020A120B2H1P | SemiQ |
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX020A120B2H1P | SemiQ |
Description: MOSFET 4N-CH 1200V 102APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 333W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V Vgs(th) (Max) @ Id: 4V @ 20mA |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX020A120B3H1P | SemiQ | MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX020B120S1-E1 | SemiQ |
Description: SIC 1200V 20M MOSFET SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX020B120S1-E1 | SemiQ |
MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX030A170S1-E1 | SemiQ |
Description: SIC MOSFET MOD Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 50A, 20V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 6333 pF @ 1.2 kV |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX040A120B2H1P | SemiQ |
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX040A120B2H1P | SemiQ |
Description: SIC 1200V 40M MOSFET FULL-BRIDGEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 217W (Tc) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4V @ 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX040A120B3H1P | SemiQ | MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX040B120S1-E1 | SemiQ |
MOSFET Modules |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX040B120S1-E1 | SemiQ |
Description: SIC 1200V 40M MOSFET SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX040C120S1-E1 | SemiQ |
Description: GEN3 1200V 40M SIC MOSFET MODULEPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080A120B2H1P | SemiQ |
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080A120B2H1P | SemiQ |
Description: MOSFET 4N-CH 1200V 27APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 119W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V Vgs(th) (Max) @ Id: 4V @ 10mA |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080A120B2H2P | SemiQ |
MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GCMX080A120B2H2P | SemiQ |
Description: 1200V, 80M SIC MOSFET FULL BRIDGPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 119W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V Vgs(th) (Max) @ Id: 4V @ 10mA |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080A120B2T1P | SemiQ |
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX080A120B2T1P | SemiQ |
Description: 1200V 80 SIC MOSFET SIX-PACK MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 103W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V Vgs(th) (Max) @ Id: 4V @ 5mA |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080B120S1-E1 | SemiQ |
Description: SIC 1200V 80M MOSFET SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080B120S1-E1 | SemiQ |
MOSFET Modules SiC 1200V 80mO MOSFET SOT-227 |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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GCMX080C120S1-E1 | SemiQ |
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GCMX080C120S1-E1 | SemiQ |
Description: GEN3 1200V 80M SIC MOSFET MODULEPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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GDP60Z120E | SemiQ |
Description: DIODE SCHOTT 1.2KV 60A TO247-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GHIS020A060B1P2 | SemiQ |
Description: SI IGBT & SIC SBD HYBRID MODULES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GHIS040A120S-A2 | SemiQ |
Description: IGBT MOD 1200V 80A 480W SOT227 |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GHIS060A060S-A1 | SemiQ |
Description: IGBT MOD 600V 120A 297W SOT227 |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| GCMS004A120S7B1 |
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Hersteller: SemiQ
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS008A120B1B1 |
![]() |
Hersteller: SemiQ
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS008C120S1-E1 |
![]() |
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS008C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 8M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V
Description: GEN3 1200V 8M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 63.5 EUR |
| GCMS010B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: 1700V, 15M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 416 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10878 pF @ 1000 V
Description: 1700V, 15M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 416 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10878 pF @ 1000 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 82.84 EUR |
| 10+ | 62.98 EUR |
| GCMS016C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 16M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6796 pF @ 1000 V
Description: GEN3 1200V 16M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6796 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 48.54 EUR |
| 10+ | 35.76 EUR |
| GCMS020A120S1-E1 |
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Hersteller: SemiQ
Description: SIC MOSFET/ SBD MODULE SOT-227 C
Description: SIC MOSFET/ SBD MODULE SOT-227 C
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| GCMS020A120S1-E1 |
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Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 213.33 EUR |
| 10+ | 190.91 EUR |
| 20+ | 187.88 EUR |
| 50+ | 183.22 EUR |
| GCMS020B120S1-E1 |
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Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS020B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
Description: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 57.34 EUR |
| 10+ | 42.65 EUR |
| GCMS040A120B1H1 |
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Hersteller: SemiQ
Description: SIC MOSFET FULL BRIDGE MODULE B1
Description: SIC MOSFET FULL BRIDGE MODULE B1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS040A120B3C1 |
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Hersteller: SemiQ
Description: SIC MOSFET 6-PACK MODULE B2_EASY
Description: SIC MOSFET 6-PACK MODULE B2_EASY
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS040A120S1-E1 |
![]() |
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS040A120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC MOSFET/ SBD MODULE SOT-227 C
Description: SIC MOSFET/ SBD MODULE SOT-227 C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS040B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
Description: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 45.55 EUR |
| 10+ | 33.42 EUR |
| GCMS040B120S1-E1 |
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Hersteller: SemiQ
MOSFET Modules 1200V SiC COPACK Power Module
MOSFET Modules 1200V SiC COPACK Power Module
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 44.14 EUR |
| 10+ | 33.53 EUR |
| 100+ | 29.44 EUR |
| GCMS040C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 40M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 1000 V
Description: GEN3 1200V 40M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 1000 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 37.7 EUR |
| 10+ | 27.36 EUR |
| GCMS080A120S1-E1 |
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Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMS080B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
Description: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 33.88 EUR |
| 10+ | 24.44 EUR |
| GCMS080B120S1-E1 |
![]() |
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 33.77 EUR |
| 10+ | 24.5 EUR |
| 100+ | 23.8 EUR |
| 1000+ | 20.61 EUR |
| GCMS080C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1332 pF @ 1000 V
Description: GEN3 1200V 80M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1332 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 33.74 EUR |
| 10+ | 24.32 EUR |
| GCMS080C120S1-E1 |
![]() |
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX003A120S3B1-N |
![]() |
Hersteller: SemiQ
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 394.72 EUR |
| 10+ | 336.41 EUR |
| GCMX003A120S7B1 |
![]() |
Hersteller: SemiQ
Description: 1200V 3M SIC HALF BRIDGE 62MM MO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.546kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V
Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
Description: 1200V 3M SIC HALF BRIDGE 62MM MO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.546kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V
Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX005A120S3B1-N |
![]() |
Hersteller: SemiQ
Description: 1200V, 5M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.531kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 424A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
Description: 1200V, 5M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.531kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 424A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 291.53 EUR |
| GCMX010A120B2B1P |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 750W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 750W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX010A120B2B1P |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX010A120B3B1P |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX010A120B3B1P |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 577W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 577W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 161.08 EUR |
| 10+ | 132.67 EUR |
| GCMX010A120B3H1P |
![]() |
Hersteller: SemiQ
MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module
MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX010B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: 1200V, 10M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 418 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10864 pF @ 1000 V
Description: 1200V, 10M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 418 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10864 pF @ 1000 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 67.83 EUR |
| 10+ | 50.9 EUR |
| GCMX015A170S1-E1 |
Hersteller: SemiQ
Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12803 pF @ 1.2 kV
Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12803 pF @ 1.2 kV
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 85.59 EUR |
| 10+ | 65.19 EUR |
| GCMX016C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 16M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V
Description: GEN3 1200V 16M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 41.1 EUR |
| 10+ | 29.97 EUR |
| GCMX020A120B2B1P |
![]() |
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 96.04 EUR |
| 10+ | 87.33 EUR |
| 25+ | 84.39 EUR |
| 50+ | 81.49 EUR |
| 100+ | 78.57 EUR |
| 250+ | 75.64 EUR |
| 500+ | 74.94 EUR |
| GCMX020A120B2H1P |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX020A120B2H1P |
![]() |
Hersteller: SemiQ
Description: MOSFET 4N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
Description: MOSFET 4N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 166.6 EUR |
| GCMX020A120B3H1P |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX020B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
Description: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 47.7 EUR |
| 10+ | 35.11 EUR |
| GCMX020B120S1-E1 |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227
MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX030A170S1-E1 |
Hersteller: SemiQ
Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 50A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6333 pF @ 1.2 kV
Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 50A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6333 pF @ 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 57.6 EUR |
| GCMX040A120B2H1P |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX040A120B2H1P |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
Description: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX040A120B3H1P |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 87.31 EUR |
| 10+ | 69.47 EUR |
| 100+ | 64.26 EUR |
| GCMX040B120S1-E1 |
![]() |
Hersteller: SemiQ
MOSFET Modules
MOSFET Modules
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 46.9 EUR |
| 10+ | 34.95 EUR |
| 200+ | 30.82 EUR |
| GCMX040B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 35.57 EUR |
| 10+ | 25.71 EUR |
| GCMX040C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
Description: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 34.44 EUR |
| 10+ | 24.86 EUR |
| GCMX080A120B2H1P |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 60.42 EUR |
| 10+ | 50.51 EUR |
| 100+ | 43.88 EUR |
| GCMX080A120B2H1P |
![]() |
Hersteller: SemiQ
Description: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Description: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 65.95 EUR |
| GCMX080A120B2H2P |
![]() |
Hersteller: SemiQ
MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX080A120B2H2P |
![]() |
Hersteller: SemiQ
Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 69.17 EUR |
| 10+ | 52.02 EUR |
| GCMX080A120B2T1P |
![]() |
Hersteller: SemiQ
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX080A120B2T1P |
![]() |
Hersteller: SemiQ
Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 56.23 EUR |
| 10+ | 41.8 EUR |
| GCMX080B120S1-E1 |
![]() |
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 30.71 EUR |
| 10+ | 22.01 EUR |
| GCMX080B120S1-E1 |
![]() |
Hersteller: SemiQ
MOSFET Modules SiC 1200V 80mO MOSFET SOT-227
MOSFET Modules SiC 1200V 80mO MOSFET SOT-227
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 30.73 EUR |
| 10+ | 22.07 EUR |
| 100+ | 18.2 EUR |
| GCMX080C120S1-E1 |
![]() |
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GCMX080C120S1-E1 |
![]() |
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
Description: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.23 EUR |
| 10+ | 23.17 EUR |
| GDP60Z120E |
![]() |
Hersteller: SemiQ
Description: DIODE SCHOTT 1.2KV 60A TO247-2
Description: DIODE SCHOTT 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GHIS020A060B1P2 |
![]() |
Hersteller: SemiQ
Description: SI IGBT & SIC SBD HYBRID MODULES
Description: SI IGBT & SIC SBD HYBRID MODULES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GHIS040A120S-A2 |
![]() |
Hersteller: SemiQ
Description: IGBT MOD 1200V 80A 480W SOT227
Description: IGBT MOD 1200V 80A 480W SOT227
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| GHIS060A060S-A1 |
![]() |
Hersteller: SemiQ
Description: IGBT MOD 600V 120A 297W SOT227
Description: IGBT MOD 600V 120A 297W SOT227
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH





















