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GCMS004A120S7B1 GCMS004A120S7B1 SemiQ GCMS004A120S7B1.pdf Description: SIC MOSFET/SBD HALF BRIDGE MODUL
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GCMS008A120B1B1 GCMS008A120B1B1 SemiQ GCMS008A120B1B1.pdf Description: SIC MOSFET/SBD HALF BRIDGE MODUL
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GCMS008C120S1-E1 GCMS008C120S1-E1 SemiQ GCMS008C120S1_E1-3601839.pdf MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
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GCMS008C120S1-E1 GCMS008C120S1-E1 SemiQ GCMS008C120S1-E1.pdf Description: GEN3 1200V 8M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V
auf Bestellung 8 Stücke:
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GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ GCMS010B120S1-E1.pdf Description: 1700V, 15M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 416 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10878 pF @ 1000 V
auf Bestellung 20 Stücke:
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GCMS016C120S1-E1 GCMS016C120S1-E1 SemiQ GCMS016C120S1-E1.pdf Description: GEN3 1200V 16M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6796 pF @ 1000 V
auf Bestellung 30 Stücke:
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GCMS020A120S1-E1 GCMS020A120S1-E1 SemiQ GCMS020A120S1-E1.pdf Description: SIC MOSFET/ SBD MODULE SOT-227 C
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GCMS020A120S1-E1 GCMS020A120S1-E1 SemiQ GCMS020A120S1_E1-1951826.pdf Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
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GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ GCMS020B120S1_E1-3393786.pdf Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227
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GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ GCMS020B120S1-E1.pdf Description: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
auf Bestellung 41 Stücke:
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GCMS040A120B1H1 SemiQ GCMS040A120B1H1.pdf Description: SIC MOSFET FULL BRIDGE MODULE B1
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GCMS040A120B3C1 SemiQ GCMS040A120B3C1.pdf Description: SIC MOSFET 6-PACK MODULE B2_EASY
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GCMS040A120S1-E1 GCMS040A120S1-E1 SemiQ GCMS040A120S1_E1-1916658.pdf Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
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GCMS040A120S1-E1 SemiQ GCMS040A120S1-E1.pdf Description: SIC MOSFET/ SBD MODULE SOT-227 C
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GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ GCMS040B120S1-E1.pdf Description: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
auf Bestellung 65 Stücke:
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GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ GCMS040B120S1_E1-3105103.pdf MOSFET Modules 1200V SiC COPACK Power Module
auf Bestellung 45 Stücke:
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GCMS040C120S1-E1 GCMS040C120S1-E1 SemiQ GCMS040C120S1-E1.pdf Description: GEN3 1200V 40M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 1000 V
auf Bestellung 10 Stücke:
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GCMS080A120S1-E1 GCMS080A120S1-E1 SemiQ GCMS080A120S1_E1-1916710.pdf Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
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GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ GCMS080B120S1-E1.pdf Description: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 35 Stücke:
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GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ GCMS080B120S1_E1.pdf Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
auf Bestellung 759 Stücke:
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GCMS080C120S1-E1 GCMS080C120S1-E1 SemiQ GCMS080C120S1-E1.pdf Description: GEN3 1200V 80M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1332 pF @ 1000 V
auf Bestellung 30 Stücke:
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GCMS080C120S1-E1 GCMS080C120S1-E1 SemiQ GCMS080C120S1-E1.pdf MOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
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GCMX003A120S3B1-N GCMX003A120S3B1-N SemiQ GCMX003A120S3B1-N.pdf MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module
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GCMX003A120S7B1 SemiQ GCMX003A120S7B1.pdf Description: 1200V 3M SIC HALF BRIDGE 62MM MO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.546kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V
Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
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GCMX005A120S3B1-N SemiQ gcmx005a120s3b1-n.pdf Description: 1200V, 5M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.531kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 424A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
auf Bestellung 6 Stücke:
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GCMX010A120B2B1P GCMX010A120B2B1P SemiQ GCMX010A120B2B1P.pdf Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 750W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
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GCMX010A120B2B1P GCMX010A120B2B1P SemiQ GCMX010A120B2B1P-3393547.pdf MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
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GCMX010A120B3B1P GCMX010A120B3B1P SemiQ GCMX010A120B3B1P_rev1_0-3394168.pdf MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
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GCMX010A120B3B1P GCMX010A120B3B1P SemiQ GCMX010A120B3B1P_rev1.0.pdf Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 577W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
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GCMX010A120B3H1P GCMX010A120B3H1P SemiQ gcmx010a120b3h1p-3571089.pdf MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module
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GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ GCMX010B120S1-E1.pdf Description: 1200V, 10M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 418 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10864 pF @ 1000 V
auf Bestellung 16 Stücke:
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GCMX015A170S1-E1 GCMX015A170S1-E1 SemiQ Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12803 pF @ 1.2 kV
auf Bestellung 10 Stücke:
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GCMX016C120S1-E1 GCMX016C120S1-E1 SemiQ GCMX016C120S1-E1.pdf Description: GEN3 1200V 16M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V
auf Bestellung 22 Stücke:
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GCMX020A120B2B1P GCMX020A120B2B1P SemiQ GCMX020A120B2B1P-3393646.pdf Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
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25+84.39 EUR
50+81.49 EUR
100+78.57 EUR
250+75.64 EUR
500+74.94 EUR
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GCMX020A120B2H1P GCMX020A120B2H1P SemiQ GCMX020A120B2H1P_rev1.0.pdf MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
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GCMX020A120B2H1P GCMX020A120B2H1P SemiQ GCMX020A120B2H1P_rev1.0.pdf Description: MOSFET 4N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
auf Bestellung 8 Stücke:
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GCMX020A120B3H1P GCMX020A120B3H1P SemiQ MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
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GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ GCMX020B120S1-E1.pdf Description: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 68 Stücke:
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GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ GCMX020B120S1_E1-3393785.pdf MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227
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GCMX030A170S1-E1 GCMX030A170S1-E1 SemiQ Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 50A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6333 pF @ 1.2 kV
auf Bestellung 6 Stücke:
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GCMX040A120B2H1P GCMX040A120B2H1P SemiQ GCMX040A120B2H1P_rev1.0.pdf MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
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GCMX040A120B2H1P GCMX040A120B2H1P SemiQ GCMX040A120B2H1P_rev1.0.pdf Description: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
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GCMX040A120B3H1P GCMX040A120B3H1P SemiQ MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
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GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ GCMX040B120S1_E1-3105082.pdf MOSFET Modules
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GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ GCMX040B120S1-E1.pdf Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 38 Stücke:
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GCMX040C120S1-E1 GCMX040C120S1-E1 SemiQ GCMX040C120S1-E1.pdf Description: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
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GCMX080A120B2H1P GCMX080A120B2H1P SemiQ GCMX080A120B2H1P.pdf MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
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GCMX080A120B2H1P GCMX080A120B2H1P SemiQ GCMX080A120B2H1P.pdf Description: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
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GCMX080A120B2H2P GCMX080A120B2H2P SemiQ GCMX080A120B2H2P.pdf MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
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GCMX080A120B2H2P SemiQ GCMX080A120B2H2P.pdf Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 40 Stücke:
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GCMX080A120B2T1P GCMX080A120B2T1P SemiQ GCMX080A120B2T1P.pdf MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
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GCMX080A120B2T1P GCMX080A120B2T1P SemiQ GCMX080A120B2T1P.pdf Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
auf Bestellung 13 Stücke:
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GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ GCMX080B120S1-E1.pdf Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 17 Stücke:
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GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ GCMX080B120S1_E1.pdf MOSFET Modules SiC 1200V 80mO MOSFET SOT-227
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GCMX080C120S1-E1 GCMX080C120S1-E1 SemiQ GCMX080C120S1-E1.pdf MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
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GCMX080C120S1-E1 GCMX080C120S1-E1 SemiQ GCMX080C120S1-E1.pdf Description: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
auf Bestellung 30 Stücke:
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1+32.23 EUR
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GDP60Z120E GDP60Z120E SemiQ GDP60Z120E.pdf Description: DIODE SCHOTT 1.2KV 60A TO247-2
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GHIS020A060B1P2 SemiQ GHIS020A060B1P2.pdf Description: SI IGBT & SIC SBD HYBRID MODULES
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GHIS040A120S-A2 GHIS040A120S-A2 SemiQ GHIS040A120S-A2.pdf Description: IGBT MOD 1200V 80A 480W SOT227
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GHIS060A060S-A1 GHIS060A060S-A1 SemiQ GHIS060A060S-A1.pdf Description: IGBT MOD 600V 120A 297W SOT227
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GCMS004A120S7B1 GCMS004A120S7B1.pdf
GCMS004A120S7B1
Hersteller: SemiQ
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
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GCMS008A120B1B1 GCMS008A120B1B1.pdf
GCMS008A120B1B1
Hersteller: SemiQ
Description: SIC MOSFET/SBD HALF BRIDGE MODUL
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GCMS008C120S1-E1 GCMS008C120S1_E1-3601839.pdf
GCMS008C120S1-E1
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
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GCMS008C120S1-E1 GCMS008C120S1-E1.pdf
GCMS008C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 8M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V
auf Bestellung 8 Stücke:
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1+63.5 EUR
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GCMS010B120S1-E1 GCMS010B120S1-E1.pdf
GCMS010B120S1-E1
Hersteller: SemiQ
Description: 1700V, 15M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 416 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10878 pF @ 1000 V
auf Bestellung 20 Stücke:
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GCMS016C120S1-E1 GCMS016C120S1-E1.pdf
GCMS016C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 16M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6796 pF @ 1000 V
auf Bestellung 30 Stücke:
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1+48.54 EUR
10+35.76 EUR
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GCMS020A120S1-E1 GCMS020A120S1-E1.pdf
GCMS020A120S1-E1
Hersteller: SemiQ
Description: SIC MOSFET/ SBD MODULE SOT-227 C
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GCMS020A120S1-E1 GCMS020A120S1_E1-1951826.pdf
GCMS020A120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
auf Bestellung 9 Stücke:
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GCMS020B120S1-E1 GCMS020B120S1_E1-3393786.pdf
GCMS020B120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227
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GCMS020B120S1-E1 GCMS020B120S1-E1.pdf
GCMS020B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
auf Bestellung 41 Stücke:
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1+57.34 EUR
10+42.65 EUR
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GCMS040A120B1H1 GCMS040A120B1H1.pdf
Hersteller: SemiQ
Description: SIC MOSFET FULL BRIDGE MODULE B1
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GCMS040A120B3C1 GCMS040A120B3C1.pdf
Hersteller: SemiQ
Description: SIC MOSFET 6-PACK MODULE B2_EASY
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GCMS040A120S1-E1 GCMS040A120S1_E1-1916658.pdf
GCMS040A120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
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GCMS040A120S1-E1 GCMS040A120S1-E1.pdf
Hersteller: SemiQ
Description: SIC MOSFET/ SBD MODULE SOT-227 C
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GCMS040B120S1-E1 GCMS040B120S1-E1.pdf
GCMS040B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
auf Bestellung 65 Stücke:
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Anzahl Preis
1+45.55 EUR
10+33.42 EUR
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GCMS040B120S1-E1 GCMS040B120S1_E1-3105103.pdf
GCMS040B120S1-E1
Hersteller: SemiQ
MOSFET Modules 1200V SiC COPACK Power Module
auf Bestellung 45 Stücke:
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Anzahl Preis
1+44.14 EUR
10+33.53 EUR
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GCMS040C120S1-E1 GCMS040C120S1-E1.pdf
GCMS040C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 40M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 1000 V
auf Bestellung 10 Stücke:
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Anzahl Preis
1+37.7 EUR
10+27.36 EUR
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GCMS080A120S1-E1 GCMS080A120S1_E1-1916710.pdf
GCMS080A120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
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GCMS080B120S1-E1 GCMS080B120S1-E1.pdf
GCMS080B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.88 EUR
10+24.44 EUR
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GCMS080B120S1-E1 GCMS080B120S1_E1.pdf
GCMS080B120S1-E1
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.77 EUR
10+24.5 EUR
100+23.8 EUR
1000+20.61 EUR
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GCMS080C120S1-E1 GCMS080C120S1-E1.pdf
GCMS080C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1332 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.74 EUR
10+24.32 EUR
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GCMS080C120S1-E1 GCMS080C120S1-E1.pdf
GCMS080C120S1-E1
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
Produkt ist nicht verfügbar
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GCMX003A120S3B1-N GCMX003A120S3B1-N.pdf
GCMX003A120S3B1-N
Hersteller: SemiQ
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module
auf Bestellung 1 Stücke:
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Anzahl Preis
1+394.72 EUR
10+336.41 EUR
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GCMX003A120S7B1 GCMX003A120S7B1.pdf
Hersteller: SemiQ
Description: 1200V 3M SIC HALF BRIDGE 62MM MO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.546kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V
Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
Produkt ist nicht verfügbar
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GCMX005A120S3B1-N gcmx005a120s3b1-n.pdf
Hersteller: SemiQ
Description: 1200V, 5M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.531kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 424A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+291.53 EUR
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GCMX010A120B2B1P GCMX010A120B2B1P.pdf
GCMX010A120B2B1P
Hersteller: SemiQ
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 750W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
Produkt ist nicht verfügbar
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GCMX010A120B2B1P GCMX010A120B2B1P-3393547.pdf
GCMX010A120B2B1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
Produkt ist nicht verfügbar
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GCMX010A120B3B1P GCMX010A120B3B1P_rev1_0-3394168.pdf
GCMX010A120B3B1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
Produkt ist nicht verfügbar
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GCMX010A120B3B1P GCMX010A120B3B1P_rev1.0.pdf
GCMX010A120B3B1P
Hersteller: SemiQ
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 577W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+161.08 EUR
10+132.67 EUR
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GCMX010A120B3H1P gcmx010a120b3h1p-3571089.pdf
GCMX010A120B3H1P
Hersteller: SemiQ
MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module
Produkt ist nicht verfügbar
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GCMX010B120S1-E1 GCMX010B120S1-E1.pdf
GCMX010B120S1-E1
Hersteller: SemiQ
Description: 1200V, 10M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 418 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10864 pF @ 1000 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.83 EUR
10+50.9 EUR
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GCMX015A170S1-E1
GCMX015A170S1-E1
Hersteller: SemiQ
Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12803 pF @ 1.2 kV
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.59 EUR
10+65.19 EUR
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GCMX016C120S1-E1 GCMX016C120S1-E1.pdf
GCMX016C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 16M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.1 EUR
10+29.97 EUR
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GCMX020A120B2B1P GCMX020A120B2B1P-3393646.pdf
GCMX020A120B2B1P
Hersteller: SemiQ
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+96.04 EUR
10+87.33 EUR
25+84.39 EUR
50+81.49 EUR
100+78.57 EUR
250+75.64 EUR
500+74.94 EUR
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GCMX020A120B2H1P GCMX020A120B2H1P_rev1.0.pdf
GCMX020A120B2H1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
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GCMX020A120B2H1P GCMX020A120B2H1P_rev1.0.pdf
GCMX020A120B2H1P
Hersteller: SemiQ
Description: MOSFET 4N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166.6 EUR
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GCMX020A120B3H1P
GCMX020A120B3H1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
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GCMX020B120S1-E1 GCMX020B120S1-E1.pdf
GCMX020B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.7 EUR
10+35.11 EUR
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GCMX020B120S1-E1 GCMX020B120S1_E1-3393785.pdf
GCMX020B120S1-E1
Hersteller: SemiQ
MOSFET Modules SiC 1200V 20mohm MOSFET SOT-227
Produkt ist nicht verfügbar
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GCMX030A170S1-E1
GCMX030A170S1-E1
Hersteller: SemiQ
Description: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 50A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6333 pF @ 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+57.6 EUR
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GCMX040A120B2H1P GCMX040A120B2H1P_rev1.0.pdf
GCMX040A120B2H1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
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GCMX040A120B2H1P GCMX040A120B2H1P_rev1.0.pdf
GCMX040A120B2H1P
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
Produkt ist nicht verfügbar
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GCMX040A120B3H1P
GCMX040A120B3H1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+87.31 EUR
10+69.47 EUR
100+64.26 EUR
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GCMX040B120S1-E1 GCMX040B120S1_E1-3105082.pdf
GCMX040B120S1-E1
Hersteller: SemiQ
MOSFET Modules
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.9 EUR
10+34.95 EUR
200+30.82 EUR
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GCMX040B120S1-E1 GCMX040B120S1-E1.pdf
GCMX040B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.57 EUR
10+25.71 EUR
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GCMX040C120S1-E1 GCMX040C120S1-E1.pdf
GCMX040C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.44 EUR
10+24.86 EUR
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GCMX080A120B2H1P GCMX080A120B2H1P.pdf
GCMX080A120B2H1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.42 EUR
10+50.51 EUR
100+43.88 EUR
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GCMX080A120B2H1P GCMX080A120B2H1P.pdf
GCMX080A120B2H1P
Hersteller: SemiQ
Description: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+65.95 EUR
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GCMX080A120B2H2P GCMX080A120B2H2P.pdf
GCMX080A120B2H2P
Hersteller: SemiQ
MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
Produkt ist nicht verfügbar
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GCMX080A120B2H2P GCMX080A120B2H2P.pdf
Hersteller: SemiQ
Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.17 EUR
10+52.02 EUR
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GCMX080A120B2T1P GCMX080A120B2T1P.pdf
GCMX080A120B2T1P
Hersteller: SemiQ
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
Produkt ist nicht verfügbar
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GCMX080A120B2T1P GCMX080A120B2T1P.pdf
GCMX080A120B2T1P
Hersteller: SemiQ
Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+56.23 EUR
10+41.8 EUR
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GCMX080B120S1-E1 GCMX080B120S1-E1.pdf
GCMX080B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.71 EUR
10+22.01 EUR
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GCMX080B120S1-E1 GCMX080B120S1_E1.pdf
GCMX080B120S1-E1
Hersteller: SemiQ
MOSFET Modules SiC 1200V 80mO MOSFET SOT-227
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.73 EUR
10+22.07 EUR
100+18.2 EUR
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GCMX080C120S1-E1 GCMX080C120S1-E1.pdf
GCMX080C120S1-E1
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GCMX080C120S1-E1 GCMX080C120S1-E1.pdf
GCMX080C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.23 EUR
10+23.17 EUR
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GDP60Z120E GDP60Z120E.pdf
GDP60Z120E
Hersteller: SemiQ
Description: DIODE SCHOTT 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
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GHIS020A060B1P2 GHIS020A060B1P2.pdf
Hersteller: SemiQ
Description: SI IGBT & SIC SBD HYBRID MODULES
Produkt ist nicht verfügbar
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GHIS040A120S-A2 GHIS040A120S-A2.pdf
GHIS040A120S-A2
Hersteller: SemiQ
Description: IGBT MOD 1200V 80A 480W SOT227
auf Bestellung 34 Stücke:
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GHIS060A060S-A1 GHIS060A060S-A1.pdf
GHIS060A060S-A1
Hersteller: SemiQ
Description: IGBT MOD 600V 120A 297W SOT227
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
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