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GHXS030A120S-D1E GHXS030A120S-D1E SemiQ GHXS030A120S-D1E.pdf Description: BRIDGE RECT 1P 1.2KV 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 60 Stücke:
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1+76.12 EUR
10+57.5 EUR
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GHXS030A120S-D1E GHXS030A120S-D1E SemiQ GHXS030A120S_D1E-1916767.pdf Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
auf Bestellung 4 Stücke:
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1+176.67 EUR
10+167.53 EUR
30+165.02 EUR
100+158.31 EUR
250+155.32 EUR
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GHXS030A120S-D3 GHXS030A120S-D3 SemiQ GHXS030A120S_D3-1915598.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A
auf Bestellung 16 Stücke:
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1+112.27 EUR
10+105.46 EUR
30+103.56 EUR
100+94.49 EUR
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GHXS030A120S-D3 GHXS030A120S-D3 SemiQ GHXS030A120S-D3.pdf Description: DIODE SCHOTKY 1200V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
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1+119.43 EUR
10+112.2 EUR
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GHXS045A120S-D3 GHXS045A120S-D3 SemiQ GHXS045A120S-D3.pdf Description: DIODE MOD SIC 1200V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
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GHXS045A120S-D3 GHXS045A120S-D3 SemiQ GHXS045A120S_D3-1916832.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A
auf Bestellung 20 Stücke:
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1+158.73 EUR
10+150.55 EUR
30+146.43 EUR
100+140.08 EUR
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GHXS050A060S-D3 GHXS050A060S-D3 SemiQ GHXS050A060S-D3.pdf Description: DIODE SCHOTT SBD 600V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1 Stücke:
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GHXS050A060S-D3 GHXS050A060S-D3 SemiQ GHXS050A060S_D3-1916603.pdf Diode Modules SiC SBD Parallel Power Module 600V 50A
Produkt ist nicht verfügbar
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GHXS050A170S-D3 GHXS050A170S-D3 SemiQ GHXS050A170S_D3-1916809.pdf Diode Modules SiC SBD Parallel Power Module 1700V 50A
auf Bestellung 9 Stücke:
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1+63.73 EUR
10+54.17 EUR
100+48 EUR
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GHXS050A170S-D3 GHXS050A170S-D3 SemiQ Description: DIODE MOD SIC 1700V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
auf Bestellung 21 Stücke:
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1+278.89 EUR
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GHXS050B065S-D3 GHXS050B065S-D3 SemiQ GHXS050B065S_D3-1916884.pdf Diode Modules SiC SBD 650V 50A SiC Power Modules
auf Bestellung 9 Stücke:
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1+39.3 EUR
10+30.5 EUR
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GHXS050B065S-D3 GHXS050B065S-D3 SemiQ GHXS050B065S-D3.pdf Description: DIODE MOD SIC 650V 95A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 125 µA @ 650 V
auf Bestellung 10 Stücke:
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1+43.23 EUR
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GHXS050B120S-D3 GHXS050B120S-D3 SemiQ GHXS050B120S_D3-1916892.pdf Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules
auf Bestellung 10 Stücke:
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1+72.97 EUR
10+62.02 EUR
20+59.93 EUR
50+57.92 EUR
100+55.93 EUR
200+53.93 EUR
500+51.43 EUR
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GHXS050B120S-D3 GHXS050B120S-D3 SemiQ GHXS050B120S-D3.pdf Description: DIODE MOD SIC 1200V 101A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 101A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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GHXS050B170S-D3 GHXS050B170S-D3 SemiQ GHXS050B170S_D3-3476201.pdf Diode Modules SiC 1700V 50A Schottky Diode Module
auf Bestellung 23 Stücke:
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1+66.7 EUR
10+56.69 EUR
100+50.23 EUR
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GHXS050B170S-D3 GHXS050B170S-D3 SemiQ GHXS050B170S-D3.pdf Description: 1700V, 50A SIC DUAL DIODE MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
auf Bestellung 9 Stücke:
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GHXS060A120S-D3 GHXS060A120S-D3 SemiQ GHXS060A120S_D3-3359583.pdf Diode Modules 1200V, 60A, SOT-227 diode module
auf Bestellung 10 Stücke:
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10+62.13 EUR
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GHXS060B120S-D3 GHXS060B120S-D3 SemiQ Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
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GHXS060B120S-D3 GHXS060B120S-D3 SemiQ GHXS060B120S_D3-1916721.pdf Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
Produkt ist nicht verfügbar
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GHXS100B065S-D3 GHXS100B065S-D3 SemiQ GHXS100B065S-D3.pdf Description: DIODE MOD SIC 650V 193A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.94 EUR
10+35.24 EUR
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GHXS100B065S-D3 GHXS100B065S-D3 SemiQ GHXS100B065S_D3-1916873.pdf Diode Modules SiC SBD 650V 100A SiC Power Modules
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.08 EUR
10+34.58 EUR
100+31.12 EUR
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GHXS100B120S-D3 GHXS100B120S-D3 SemiQ GHXS100B120S-D3.pdf Description: DIODE MOD SIC 1200V 198A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 20 Stücke:
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1+67.41 EUR
10+50.67 EUR
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GHXS100B120S-D3 GHXS100B120S-D3 SemiQ GHXS100B120S_D3-1916878.pdf Diode Modules SiC SBD 1200V 100A SiC Power Modules
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+68.5 EUR
10+51.5 EUR
100+49.65 EUR
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GHXS100B170S-D3 GHXS100B170S-D3 SemiQ GHXS100B170S-D3_rev0.2.pdf Description: 1700V, 100A SIC DUAL DIODE MODUL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 214A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.7 kV
auf Bestellung 8 Stücke:
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1+91.52 EUR
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GHXS100B170S-D3 GHXS100B170S-D3 SemiQ GHXS100B170S_D3-3476211.pdf Diode Modules SiC 1700V 100A Schottky Diode Module
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
1+100.87 EUR
10+83.32 EUR
100+74.18 EUR
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GP2D003A060C GP2D003A060C SemiQ GP2D003A060C_REV2_8-27-15.pdf Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GP2D003A060C GP2D003A060C SemiQ GP2D003A060C_REV2_8-27-15.pdf Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GP2D003A065A GP2D003A065A SemiQ GP2D003A065A_REV2_8-27-15.pdf Description: DIODE SIL CARB 650V 3A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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GP2D005A120C GP2D005A120C SemiQ GP2D005A120C.pdf Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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GP2D005A120C GP2D005A120C SemiQ GP2D005A120C.pdf Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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GP2D006A065C GP2D006A065C SemiQ GP2D006A065C.pdf Description: DIODE SIL CARB 650V 6A TO252-2L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 316pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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GP2D010A065A SemiQ GP2D010A065A.pdf Description: DIODE SCHOTTKY 650V 10A TO220-2
Produkt ist nicht verfügbar
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GP2D010A065C SemiQ GP2D010A065C.pdf Description: DIODE SCHOTTKY 650V 10A TO252
Produkt ist nicht verfügbar
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GP2D010A120A GP2D010A120A SemiQ GP2D010A120A.pdf Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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GP2D010A120B GP2D010A120B SemiQ GP2D010A120B.pdf Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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GP2D010A120C GP2D010A120C SemiQ GP2D010A120C.pdf Description: DIODE SIL CARB 1.2KV 10A TO252L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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GP2D010A120U SemiQ Description: DIODE ARR SIC 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 17A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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GP2D020A065B SemiQ GP2D020A065B.pdf Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1054pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Produkt ist nicht verfügbar
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GP2D020A065U SemiQ GP2D020A065U.pdf Description: DIODE ARRAY SCHOTTKY 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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GP2D030A065B SemiQ Description: DIODE SILICON CARBIDE
Packaging: Tube
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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GP2D060A120B SemiQ GP2D060A120B.pdf Description: DIODE SCHOTKY 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
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GP2T020A120H GP2T020A120H SemiQ GP2T020A120H-3359577.pdf SiC MOSFETs 1200V, 18mOhm, TO-247-4L MOSFET
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.23 EUR
10+45.53 EUR
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60+41.13 EUR
120+39.81 EUR
270+37.15 EUR
510+34.16 EUR
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GP2T040A120H GP2T040A120H SemiQ GP2T040A120H-3032323.pdf MOSFET SiC MOSFET 1200V 40mohm TO-247-4L
auf Bestellung 92 Stücke:
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1+30.57 EUR
10+26.95 EUR
30+26.21 EUR
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GP2T040A120H GP2T040A120H SemiQ GP2T040A120H.pdf Description: SIC MOSFET 1200V 40M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
auf Bestellung 60 Stücke:
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GP2T040A120J GP2T040A120J SemiQ GP2T040A120J-3359568.pdf SiC MOSFETs 1200V, 40mOhm, TO-263-7L MOSFET
auf Bestellung 67 Stücke:
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GP2T040A120U GP2T040A120U SemiQ GP2T040A120U-3032364.pdf MOSFET SiC MOSFET 1200V 40mohm TO-247-3L
auf Bestellung 48 Stücke:
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1+29.5 EUR
10+26 EUR
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GP2T040A120U GP2T040A120U SemiQ GP2T040A120U.pdf Description: SIC MOSFET 1200V 40M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
auf Bestellung 61 Stücke:
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1+33.18 EUR
30+26.13 EUR
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GP2T080A120H SemiQ GP2T080A120H.pdf Description: SIC MOSFET 1200V 80M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
auf Bestellung 65 Stücke:
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1+19.52 EUR
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GP2T080A120H GP2T080A120H SemiQ GP2T080A120H-2999273.pdf SiC MOSFETs SiC MOSFET 1200V 80mohm TO-247-4L
auf Bestellung 44 Stücke:
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1+18.74 EUR
10+16.07 EUR
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270+12.57 EUR
510+11.79 EUR
1020+10.61 EUR
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GP2T080A120J GP2T080A120J SemiQ GP2T080A120J-3359589.pdf SiC MOSFETs 1200V, 80mOhm, TO-263-7L MOSFET
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.78 EUR
10+16.56 EUR
50+14.04 EUR
100+13.39 EUR
250+12.6 EUR
500+11.83 EUR
1000+10.63 EUR
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GP2T080A120U GP2T080A120U SemiQ GP2T080A120U.pdf Description: SIC MOSFET 1200V 80M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.7 EUR
30+7.37 EUR
120+6.69 EUR
Mindestbestellmenge: 2
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GP2T080A120U GP2T080A120U SemiQ GP2T080A120U.pdf MOSFET
auf Bestellung 1211 Stücke:
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1+18.69 EUR
10+16.02 EUR
30+14.54 EUR
120+13.34 EUR
270+12.55 EUR
510+11.77 EUR
1020+10.6 EUR
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GP3D005A120C SemiQ Description: DIODE SCHOTTKY 1.2KV 5A DPAK-2
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP3D005A170B GP3D005A170B SemiQ GP3D005A170B.pdf Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
auf Bestellung 725 Stücke:
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3+8.1 EUR
30+4.54 EUR
120+3.76 EUR
510+3.18 EUR
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GP3D005A170B GP3D005A170B SemiQ GP3D005A170B-1916815.pdf SiC Schottky Diodes SiC Schottky Diode 5A 1700V TO-247-2
auf Bestellung 1327 Stücke:
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1+9.73 EUR
10+5.79 EUR
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GP3D006A065A GP3D006A065A SemiQ GP3D006A065A.pdf Description: DIODE SIL CARB 650V 20A TO220-2L
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+3.09 EUR
100+2.48 EUR
Mindestbestellmenge: 6
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GP3D006A065A GP3D006A065A SemiQ GP3D006A065A.pdf SiC Schottky Diodes SiC Schottky Diode 6A 650V
auf Bestellung 142 Stücke:
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1+3.84 EUR
10+3.26 EUR
50+1.99 EUR
250+1.78 EUR
500+1.44 EUR
1000+1.23 EUR
5000+1.21 EUR
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GP3D008A065A GP3D008A065A SemiQ GP3D008A065A-1916841.pdf SiC Schottky Diodes SiC Schottky Diode 8A 650V TO-220
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.19 EUR
10+2.71 EUR
100+2.53 EUR
500+1.85 EUR
1000+1.59 EUR
2500+1.51 EUR
5000+1.46 EUR
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GP3D008A065D GP3D008A065D SemiQ GP3D008A065D.pdf Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GP3D008A065D GP3D008A065D SemiQ GP3D008A065D.pdf Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GHXS030A120S-D1E GHXS030A120S-D1E.pdf
GHXS030A120S-D1E
Hersteller: SemiQ
Description: BRIDGE RECT 1P 1.2KV 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 60 Stücke:
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Anzahl Preis
1+76.12 EUR
10+57.5 EUR
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GHXS030A120S-D1E GHXS030A120S_D1E-1916767.pdf
GHXS030A120S-D1E
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+176.67 EUR
10+167.53 EUR
30+165.02 EUR
100+158.31 EUR
250+155.32 EUR
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GHXS030A120S-D3 GHXS030A120S_D3-1915598.pdf
GHXS030A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A
auf Bestellung 16 Stücke:
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Anzahl Preis
1+112.27 EUR
10+105.46 EUR
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100+94.49 EUR
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GHXS030A120S-D3 GHXS030A120S-D3.pdf
GHXS030A120S-D3
Hersteller: SemiQ
Description: DIODE SCHOTKY 1200V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
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Anzahl Preis
1+119.43 EUR
10+112.2 EUR
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GHXS045A120S-D3 GHXS045A120S-D3.pdf
GHXS045A120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
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GHXS045A120S-D3 GHXS045A120S_D3-1916832.pdf
GHXS045A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+158.73 EUR
10+150.55 EUR
30+146.43 EUR
100+140.08 EUR
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GHXS050A060S-D3 GHXS050A060S-D3.pdf
GHXS050A060S-D3
Hersteller: SemiQ
Description: DIODE SCHOTT SBD 600V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+92.14 EUR
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GHXS050A060S-D3 GHXS050A060S_D3-1916603.pdf
GHXS050A060S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 50A
Produkt ist nicht verfügbar
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GHXS050A170S-D3 GHXS050A170S_D3-1916809.pdf
GHXS050A170S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 1700V 50A
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.73 EUR
10+54.17 EUR
100+48 EUR
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GHXS050A170S-D3
GHXS050A170S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1700V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
auf Bestellung 21 Stücke:
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Anzahl Preis
1+278.89 EUR
10+261.21 EUR
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GHXS050B065S-D3 GHXS050B065S_D3-1916884.pdf
GHXS050B065S-D3
Hersteller: SemiQ
Diode Modules SiC SBD 650V 50A SiC Power Modules
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.3 EUR
10+30.5 EUR
100+26.26 EUR
500+26.24 EUR
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GHXS050B065S-D3 GHXS050B065S-D3.pdf
GHXS050B065S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 650V 95A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 125 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.23 EUR
10+31.58 EUR
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GHXS050B120S-D3 GHXS050B120S_D3-1916892.pdf
GHXS050B120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+72.97 EUR
10+62.02 EUR
20+59.93 EUR
50+57.92 EUR
100+55.93 EUR
200+53.93 EUR
500+51.43 EUR
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GHXS050B120S-D3 GHXS050B120S-D3.pdf
GHXS050B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 101A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 101A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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GHXS050B170S-D3 GHXS050B170S_D3-3476201.pdf
GHXS050B170S-D3
Hersteller: SemiQ
Diode Modules SiC 1700V 50A Schottky Diode Module
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+66.7 EUR
10+56.69 EUR
100+50.23 EUR
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GHXS050B170S-D3 GHXS050B170S-D3.pdf
GHXS050B170S-D3
Hersteller: SemiQ
Description: 1700V, 50A SIC DUAL DIODE MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS060A120S-D3 GHXS060A120S_D3-3359583.pdf
GHXS060A120S-D3
Hersteller: SemiQ
Diode Modules 1200V, 60A, SOT-227 diode module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.57 EUR
10+62.13 EUR
100+54.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS060B120S-D3
GHXS060B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS060B120S-D3 GHXS060B120S_D3-1916721.pdf
GHXS060B120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B065S-D3 GHXS100B065S-D3.pdf
GHXS100B065S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 650V 193A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.94 EUR
10+35.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B065S-D3 GHXS100B065S_D3-1916873.pdf
GHXS100B065S-D3
Hersteller: SemiQ
Diode Modules SiC SBD 650V 100A SiC Power Modules
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.08 EUR
10+34.58 EUR
100+31.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B120S-D3 GHXS100B120S-D3.pdf
GHXS100B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 198A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.41 EUR
10+50.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B120S-D3 GHXS100B120S_D3-1916878.pdf
GHXS100B120S-D3
Hersteller: SemiQ
Diode Modules SiC SBD 1200V 100A SiC Power Modules
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.5 EUR
10+51.5 EUR
100+49.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B170S-D3 GHXS100B170S-D3_rev0.2.pdf
GHXS100B170S-D3
Hersteller: SemiQ
Description: 1700V, 100A SIC DUAL DIODE MODUL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 214A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.7 kV
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+91.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B170S-D3 GHXS100B170S_D3-3476211.pdf
GHXS100B170S-D3
Hersteller: SemiQ
Diode Modules SiC 1700V 100A Schottky Diode Module
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.87 EUR
10+83.32 EUR
100+74.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2D003A060C GP2D003A060C_REV2_8-27-15.pdf
GP2D003A060C
Hersteller: SemiQ
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D003A060C GP2D003A060C_REV2_8-27-15.pdf
GP2D003A060C
Hersteller: SemiQ
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D003A065A GP2D003A065A_REV2_8-27-15.pdf
GP2D003A065A
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 3A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D005A120C GP2D005A120C.pdf
GP2D005A120C
Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D005A120C GP2D005A120C.pdf
GP2D005A120C
Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D006A065C GP2D006A065C.pdf
GP2D006A065C
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 6A TO252-2L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 316pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D010A065A GP2D010A065A.pdf
Hersteller: SemiQ
Description: DIODE SCHOTTKY 650V 10A TO220-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D010A065C GP2D010A065C.pdf
Hersteller: SemiQ
Description: DIODE SCHOTTKY 650V 10A TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D010A120A GP2D010A120A.pdf
GP2D010A120A
Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D010A120B GP2D010A120B.pdf
GP2D010A120B
Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D010A120C GP2D010A120C.pdf
GP2D010A120C
Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 10A TO252L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D010A120U
Hersteller: SemiQ
Description: DIODE ARR SIC 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 17A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D020A065B GP2D020A065B.pdf
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1054pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D020A065U GP2D020A065U.pdf
Hersteller: SemiQ
Description: DIODE ARRAY SCHOTTKY 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D030A065B
Hersteller: SemiQ
Description: DIODE SILICON CARBIDE
Packaging: Tube
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D060A120B GP2D060A120B.pdf
Hersteller: SemiQ
Description: DIODE SCHOTKY 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2T020A120H GP2T020A120H-3359577.pdf
GP2T020A120H
Hersteller: SemiQ
SiC MOSFETs 1200V, 18mOhm, TO-247-4L MOSFET
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.23 EUR
10+45.53 EUR
30+42.47 EUR
60+41.13 EUR
120+39.81 EUR
270+37.15 EUR
510+34.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T040A120H GP2T040A120H-3032323.pdf
GP2T040A120H
Hersteller: SemiQ
MOSFET SiC MOSFET 1200V 40mohm TO-247-4L
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.57 EUR
10+26.95 EUR
30+26.21 EUR
60+24.73 EUR
120+23.27 EUR
270+22.56 EUR
510+21.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T040A120H GP2T040A120H.pdf
GP2T040A120H
Hersteller: SemiQ
Description: SIC MOSFET 1200V 40M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.28 EUR
30+30.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T040A120J GP2T040A120J-3359568.pdf
GP2T040A120J
Hersteller: SemiQ
SiC MOSFETs 1200V, 40mOhm, TO-263-7L MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.86 EUR
10+13.97 EUR
100+11.62 EUR
500+10.37 EUR
1000+8.82 EUR
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GP2T040A120U GP2T040A120U-3032364.pdf
GP2T040A120U
Hersteller: SemiQ
MOSFET SiC MOSFET 1200V 40mohm TO-247-3L
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.5 EUR
10+26 EUR
30+25.29 EUR
60+23.87 EUR
120+22.46 EUR
270+21.75 EUR
510+20.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T040A120U GP2T040A120U.pdf
GP2T040A120U
Hersteller: SemiQ
Description: SIC MOSFET 1200V 40M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.18 EUR
30+26.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T080A120H GP2T080A120H.pdf
Hersteller: SemiQ
Description: SIC MOSFET 1200V 80M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.52 EUR
10+17.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T080A120H GP2T080A120H-2999273.pdf
GP2T080A120H
Hersteller: SemiQ
SiC MOSFETs SiC MOSFET 1200V 80mohm TO-247-4L
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.74 EUR
10+16.07 EUR
30+14.56 EUR
120+13.38 EUR
270+12.57 EUR
510+11.79 EUR
1020+10.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T080A120J GP2T080A120J-3359589.pdf
GP2T080A120J
Hersteller: SemiQ
SiC MOSFETs 1200V, 80mOhm, TO-263-7L MOSFET
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.78 EUR
10+16.56 EUR
50+14.04 EUR
100+13.39 EUR
250+12.6 EUR
500+11.83 EUR
1000+10.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP2T080A120U GP2T080A120U.pdf
GP2T080A120U
Hersteller: SemiQ
Description: SIC MOSFET 1200V 80M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.7 EUR
30+7.37 EUR
120+6.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP2T080A120U GP2T080A120U.pdf
GP2T080A120U
Hersteller: SemiQ
MOSFET
auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.69 EUR
10+16.02 EUR
30+14.54 EUR
120+13.34 EUR
270+12.55 EUR
510+11.77 EUR
1020+10.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP3D005A120C
Hersteller: SemiQ
Description: DIODE SCHOTTKY 1.2KV 5A DPAK-2
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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GP3D005A170B GP3D005A170B.pdf
GP3D005A170B
Hersteller: SemiQ
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.1 EUR
30+4.54 EUR
120+3.76 EUR
510+3.18 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GP3D005A170B GP3D005A170B-1916815.pdf
GP3D005A170B
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 5A 1700V TO-247-2
auf Bestellung 1327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.73 EUR
10+5.79 EUR
120+5.76 EUR
270+4.68 EUR
510+4.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP3D006A065A GP3D006A065A.pdf
GP3D006A065A
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2L
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+3.09 EUR
100+2.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GP3D006A065A GP3D006A065A.pdf
GP3D006A065A
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 6A 650V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.84 EUR
10+3.26 EUR
50+1.99 EUR
250+1.78 EUR
500+1.44 EUR
1000+1.23 EUR
5000+1.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP3D008A065A GP3D008A065A-1916841.pdf
GP3D008A065A
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 8A 650V TO-220
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.19 EUR
10+2.71 EUR
100+2.53 EUR
500+1.85 EUR
1000+1.59 EUR
2500+1.51 EUR
5000+1.46 EUR
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GP3D008A065D GP3D008A065D.pdf
GP3D008A065D
Hersteller: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP3D008A065D GP3D008A065D.pdf
GP3D008A065D
Hersteller: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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