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GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ GCMX040B120S1_E1.pdf MOSFET Modules 1200V SiC MOSFET Power Module
auf Bestellung 36 Stücke:
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GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ GCMX040B120S1-E1.pdf Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 28 Stücke:
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GCMX040C120S1-E1 GCMX040C120S1-E1 SemiQ GCMX040C120S1_E1.pdf MOSFET Modules Gen3 1200V 40mohm SiC MOSFET Module, SOT-227
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GCMX040C120S1-E1 GCMX040C120S1-E1 SemiQ GCMX040C120S1-E1.pdf Description: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
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GCMX080A120B2H1P GCMX080A120B2H1P SemiQ GCMX080A120B2H1P.pdf MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
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GCMX080A120B2H1P GCMX080A120B2H1P SemiQ GCMX080A120B2H1P.pdf Description: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
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GCMX080A120B2H2P GCMX080A120B2H2P SemiQ GCMX080A120B2H2P.pdf MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
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GCMX080A120B2H2P SemiQ GCMX080A120B2H2P.pdf Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
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GCMX080A120B2T1P GCMX080A120B2T1P SemiQ GCMX080A120B2T1P.pdf Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
auf Bestellung 13 Stücke:
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GCMX080A120B2T1P GCMX080A120B2T1P SemiQ GCMX080A120B2T1P.pdf MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
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GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ GCMX080B120S1-E1.pdf Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 47 Stücke:
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GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ GCMX080B120S1_E1.pdf MOSFET Modules SiC 1200V 80mO MOSFET SOT-227
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GCMX080C120S1-E1 GCMX080C120S1-E1 SemiQ GCMX080C120S1-E1.pdf Description: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
auf Bestellung 30 Stücke:
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GCMX080C120S1-E1 GCMX080C120S1-E1 SemiQ GCMX080C120S1-E1.pdf MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
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GCMX2P3B120S3B1-N SemiQ GCMX2P3B120S3B1-N.pdf Description: GEN3 1200V 2.4M SIC 62MM HALF BR
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1705W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 608A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 42900pF @ 800V
Rds On (Max) @ Id, Vgs: 3mOhm @ 300A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1566nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 120mA
auf Bestellung 8 Stücke:
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GDP60Z120E GDP60Z120E SemiQ GDP60Z120E.pdf Description: DIODE SCHOTT 1.2KV 60A TO247-2
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GHIS020A060B1P2 SemiQ GHIS020A060B1P2.pdf Description: SI IGBT & SIC SBD HYBRID MODULES
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GHIS040A120S-A2 GHIS040A120S-A2 SemiQ GHIS040A120S-A2.pdf Description: IGBT MOD 1200V 80A 480W SOT227
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GHIS060A060S-A1 GHIS060A060S-A1 SemiQ GHIS060A060S-A1.pdf Description: IGBT MOD 600V 120A 297W SOT227
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GHIS060A060S-A2 GHIS060A060S-A2 SemiQ GHIS060A060S-A2.pdf Description: IGBT MOD 600V 120A 312W SOT227
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GHIS060A120S-A1 GHIS060A120S-A1 SemiQ GHIS060A120S-A1.pdf Description: IGBT MOD 1200V 120A 680W SOT227
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GHIS060A120S-A2 GHIS060A120S-A2 SemiQ GHIS060A120S-A2.pdf Description: IGBT MOD 1200V 120A 680W SOT227
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GHXS010A060S-D3 GHXS010A060S-D3 SemiQ GHXS010A060S_D3.pdf Diode Modules SiC SBD Parallel Power Module 600V 10A
auf Bestellung 10 Stücke:
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GHXS010A060S-D3 GHXS010A060S-D3 SemiQ GHXS010A060S-D3.pdf Description: DIODE MOD SIC 600V 10A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 14 Stücke:
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GHXS015A120S-D3 GHXS015A120S-D3 SemiQ GHXS015A120S_D3-1916837.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
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GHXS015A120S-D3 GHXS015A120S-D3 SemiQ GHXS015A120S-D3.pdf Description: DIODE SCHOT SBD 1200V 15A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1 Stücke:
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GHXS020A060S-D3 GHXS020A060S-D3 SemiQ GHXS020A060S_D3.pdf Diode Modules SiC SBD Parallel Power Module 600V 20A
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GHXS020A060S-D3 GHXS020A060S-D3 SemiQ GHXS020A060S-D3.pdf Description: DIODE MOD SIC 600V 20A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 12 Stücke:
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GHXS030A060S-D1E GHXS030A060S-D1E SemiQ GHXS030A060S_D1E.pdf Diode Modules SiC SBD Rectifier Bridge Power Module 600V 30A
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GHXS030A060S-D1E GHXS030A060S-D1E SemiQ GHXS030A060S-D1E.pdf Description: BRIDGE RECT 1P 600V 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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GHXS030A060S-D3 GHXS030A060S-D3 SemiQ GHXS030A060S_D3-1916863.pdf Diode Modules SiC SBD Parallel Power Module 600V 30A
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GHXS030A060S-D3 GHXS030A060S-D3 SemiQ GHXS030A060S-D3.pdf Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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GHXS030A120S-D1E GHXS030A120S-D1E SemiQ GHXS030A120S_D1E-1916767.pdf Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
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GHXS030A120S-D1E GHXS030A120S-D1E SemiQ GHXS030A120S-D1E.pdf Description: BRIDGE RECT 1P 1.2KV 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 41 Stücke:
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GHXS030A120S-D3 GHXS030A120S-D3 SemiQ GHXS030A120S-D3.pdf Description: DIODE SCHOTKY 1200V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
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GHXS030A120S-D3 GHXS030A120S-D3 SemiQ GHXS030A120S_D3-1915598.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A
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GHXS045A120S-D3 GHXS045A120S-D3 SemiQ GHXS045A120S_D3-1916832.pdf Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A
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GHXS045A120S-D3 GHXS045A120S-D3 SemiQ GHXS045A120S-D3.pdf Description: DIODE MOD SIC 1200V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
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GHXS050A060S-D3 GHXS050A060S-D3 SemiQ GHXS050A060S_D3-1916603.pdf Diode Modules SiC SBD Parallel Power Module 600V 50A
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GHXS050A060S-D3 GHXS050A060S-D3 SemiQ GHXS050A060S-D3.pdf Description: DIODE SCHOTT SBD 600V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1 Stücke:
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GHXS050A170S-D3 GHXS050A170S-D3 SemiQ Description: DIODE MOD SIC 1700V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
auf Bestellung 21 Stücke:
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GHXS050A170S-D3 GHXS050A170S-D3 SemiQ GHXS050A170S_D3-1916809.pdf Diode Modules SiC SBD Parallel Power Module 1700V 50A
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GHXS050B065S-D3 GHXS050B065S-D3 SemiQ GHXS050B065S_D3.pdf Diode Modules SiC SBD 650V 50A SiC Power Modules
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GHXS050B065S-D3 GHXS050B065S-D3 SemiQ GHXS050B065S-D3.pdf Description: DIODE MOD SIC 650V 95A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 125 µA @ 650 V
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GHXS050B120S-D3 GHXS050B120S-D3 SemiQ GHXS050B120S_D3-1916892.pdf Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules
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GHXS050B120S-D3 GHXS050B120S-D3 SemiQ GHXS050B120S-D3.pdf Description: DIODE MOD SIC 1200V 101A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 101A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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GHXS050B170S-D3 GHXS050B170S-D3 SemiQ GHXS050B170S_D3-3476201.pdf Diode Modules SiC 1700V 50A Schottky Diode Module
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GHXS050B170S-D3 GHXS050B170S-D3 SemiQ GHXS050B170S-D3.pdf Description: 1700V, 50A SIC DUAL DIODE MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
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GHXS060A120S-D3 GHXS060A120S-D3 SemiQ GHXS060A120S-D3.pdf Diode Modules 1200V, 60A, SOT-227 diode module
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GHXS060B120S-D3 GHXS060B120S-D3 SemiQ Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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GHXS060B120S-D3 GHXS060B120S-D3 SemiQ GHXS060B120S_D3-1916721.pdf Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
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GHXS100B065S-D3 GHXS100B065S-D3 SemiQ GHXS100B065S_D3.pdf Diode Modules SiC SBD 650V 100A SiC Power Modules
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GHXS100B065S-D3 GHXS100B065S-D3 SemiQ GHXS100B065S-D3.pdf Description: DIODE MOD SIC 650V 193A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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GHXS100B120S-D3 GHXS100B120S-D3 SemiQ GHXS100B120S-D3.pdf Description: DIODE MOD SIC 1200V 198A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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GHXS100B120S-D3 GHXS100B120S-D3 SemiQ GHXS100B120S_D3-1916878.pdf Diode Modules SiC SBD 1200V 100A SiC Power Modules
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GHXS100B170S-D3 GHXS100B170S-D3 SemiQ GHXS100B170S_D3.pdf Diode Modules SiC 1700V 100A Schottky Diode Module
auf Bestellung 126 Stücke:
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GHXS100B170S-D3 GHXS100B170S-D3 SemiQ GHXS100B170S-D3_rev0.2.pdf Description: 1700V, 100A SIC DUAL DIODE MODUL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 214A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.7 kV
Produkt ist nicht verfügbar
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GP2D003A060C GP2D003A060C SemiQ GP2D003A060C_REV2_8-27-15.pdf Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GP2D003A060C GP2D003A060C SemiQ GP2D003A060C_REV2_8-27-15.pdf Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GP2D003A065A GP2D003A065A SemiQ GP2D003A065A_REV2_8-27-15.pdf Description: DIODE SIL CARB 650V 3A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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GCMX040B120S1-E1 GCMX040B120S1_E1.pdf
GCMX040B120S1-E1
Hersteller: SemiQ
MOSFET Modules 1200V SiC MOSFET Power Module
auf Bestellung 36 Stücke:
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1+35.68 EUR
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GCMX040B120S1-E1 GCMX040B120S1-E1.pdf
GCMX040B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 28 Stücke:
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1+37.72 EUR
10+27.27 EUR
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GCMX040C120S1-E1 GCMX040C120S1_E1.pdf
GCMX040C120S1-E1
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 40mohm SiC MOSFET Module, SOT-227
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GCMX040C120S1-E1 GCMX040C120S1-E1.pdf
GCMX040C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
auf Bestellung 18 Stücke:
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1+36.54 EUR
10+26.37 EUR
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GCMX080A120B2H1P GCMX080A120B2H1P.pdf
GCMX080A120B2H1P
Hersteller: SemiQ
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
auf Bestellung 36 Stücke:
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1+60.42 EUR
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GCMX080A120B2H1P GCMX080A120B2H1P.pdf
GCMX080A120B2H1P
Hersteller: SemiQ
Description: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
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GCMX080A120B2H2P GCMX080A120B2H2P.pdf
GCMX080A120B2H2P
Hersteller: SemiQ
MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
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GCMX080A120B2H2P GCMX080A120B2H2P.pdf
Hersteller: SemiQ
Description: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 40 Stücke:
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1+69.17 EUR
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GCMX080A120B2T1P GCMX080A120B2T1P.pdf
GCMX080A120B2T1P
Hersteller: SemiQ
Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
auf Bestellung 13 Stücke:
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Anzahl Preis
1+56.23 EUR
10+41.8 EUR
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GCMX080A120B2T1P GCMX080A120B2T1P.pdf
GCMX080A120B2T1P
Hersteller: SemiQ
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
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GCMX080B120S1-E1 GCMX080B120S1-E1.pdf
GCMX080B120S1-E1
Hersteller: SemiQ
Description: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 47 Stücke:
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Anzahl Preis
1+31.96 EUR
10+22.91 EUR
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GCMX080B120S1-E1 GCMX080B120S1_E1.pdf
GCMX080B120S1-E1
Hersteller: SemiQ
MOSFET Modules SiC 1200V 80mO MOSFET SOT-227
auf Bestellung 57 Stücke:
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1+30.73 EUR
10+22.07 EUR
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GCMX080C120S1-E1 GCMX080C120S1-E1.pdf
GCMX080C120S1-E1
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
auf Bestellung 30 Stücke:
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Anzahl Preis
1+34.18 EUR
10+24.58 EUR
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GCMX080C120S1-E1 GCMX080C120S1-E1.pdf
GCMX080C120S1-E1
Hersteller: SemiQ
MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
Produkt ist nicht verfügbar
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GCMX2P3B120S3B1-N GCMX2P3B120S3B1-N.pdf
Hersteller: SemiQ
Description: GEN3 1200V 2.4M SIC 62MM HALF BR
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1705W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 608A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 42900pF @ 800V
Rds On (Max) @ Id, Vgs: 3mOhm @ 300A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1566nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 120mA
auf Bestellung 8 Stücke:
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Anzahl Preis
1+251.36 EUR
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GDP60Z120E GDP60Z120E.pdf
GDP60Z120E
Hersteller: SemiQ
Description: DIODE SCHOTT 1.2KV 60A TO247-2
Produkt ist nicht verfügbar
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GHIS020A060B1P2 GHIS020A060B1P2.pdf
Hersteller: SemiQ
Description: SI IGBT & SIC SBD HYBRID MODULES
Produkt ist nicht verfügbar
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GHIS040A120S-A2 GHIS040A120S-A2.pdf
GHIS040A120S-A2
Hersteller: SemiQ
Description: IGBT MOD 1200V 80A 480W SOT227
auf Bestellung 34 Stücke:
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GHIS060A060S-A1 GHIS060A060S-A1.pdf
GHIS060A060S-A1
Hersteller: SemiQ
Description: IGBT MOD 600V 120A 297W SOT227
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GHIS060A060S-A2 GHIS060A060S-A2.pdf
GHIS060A060S-A2
Hersteller: SemiQ
Description: IGBT MOD 600V 120A 312W SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHIS060A120S-A1 GHIS060A120S-A1.pdf
GHIS060A120S-A1
Hersteller: SemiQ
Description: IGBT MOD 1200V 120A 680W SOT227
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GHIS060A120S-A2 GHIS060A120S-A2.pdf
GHIS060A120S-A2
Hersteller: SemiQ
Description: IGBT MOD 1200V 120A 680W SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS010A060S-D3 GHXS010A060S_D3.pdf
GHXS010A060S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 10A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.06 EUR
10+20.75 EUR
100+16.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS010A060S-D3 GHXS010A060S-D3.pdf
GHXS010A060S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 600V 10A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.15 EUR
10+21.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS015A120S-D3 GHXS015A120S_D3-1916837.pdf
GHXS015A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GHXS015A120S-D3 GHXS015A120S-D3.pdf
GHXS015A120S-D3
Hersteller: SemiQ
Description: DIODE SCHOT SBD 1200V 15A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+70.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS020A060S-D3 GHXS020A060S_D3.pdf
GHXS020A060S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 20A
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.46 EUR
10+23.58 EUR
100+19.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS020A060S-D3 GHXS020A060S-D3.pdf
GHXS020A060S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 600V 20A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.04 EUR
10+24.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A060S-D1E GHXS030A060S_D1E.pdf
GHXS030A060S-D1E
Hersteller: SemiQ
Diode Modules SiC SBD Rectifier Bridge Power Module 600V 30A
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.09 EUR
10+40.46 EUR
100+35.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A060S-D1E GHXS030A060S-D1E.pdf
GHXS030A060S-D1E
Hersteller: SemiQ
Description: BRIDGE RECT 1P 600V 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.78 EUR
10+34.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A060S-D3 GHXS030A060S_D3-1916863.pdf
GHXS030A060S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A060S-D3 GHXS030A060S-D3.pdf
GHXS030A060S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A120S-D1E GHXS030A120S_D1E-1916767.pdf
GHXS030A120S-D1E
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+176.67 EUR
10+167.53 EUR
30+165.02 EUR
100+158.31 EUR
250+155.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A120S-D1E GHXS030A120S-D1E.pdf
GHXS030A120S-D1E
Hersteller: SemiQ
Description: BRIDGE RECT 1P 1.2KV 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.55 EUR
10+58.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A120S-D3 GHXS030A120S-D3.pdf
GHXS030A120S-D3
Hersteller: SemiQ
Description: DIODE SCHOTKY 1200V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+119.43 EUR
10+112.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS030A120S-D3 GHXS030A120S_D3-1915598.pdf
GHXS030A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+112.27 EUR
10+105.46 EUR
30+103.56 EUR
100+94.49 EUR
250+92.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS045A120S-D3 GHXS045A120S_D3-1916832.pdf
GHXS045A120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+158.73 EUR
10+150.55 EUR
30+146.43 EUR
100+140.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS045A120S-D3 GHXS045A120S-D3.pdf
GHXS045A120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050A060S-D3 GHXS050A060S_D3-1916603.pdf
GHXS050A060S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 600V 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050A060S-D3 GHXS050A060S-D3.pdf
GHXS050A060S-D3
Hersteller: SemiQ
Description: DIODE SCHOTT SBD 600V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+92.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050A170S-D3
GHXS050A170S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1700V 150A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 1700 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+278.89 EUR
10+261.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050A170S-D3 GHXS050A170S_D3-1916809.pdf
GHXS050A170S-D3
Hersteller: SemiQ
Diode Modules SiC SBD Parallel Power Module 1700V 50A
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.73 EUR
10+54.17 EUR
100+48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050B065S-D3 GHXS050B065S_D3.pdf
GHXS050B065S-D3
Hersteller: SemiQ
Diode Modules SiC SBD 650V 50A SiC Power Modules
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.52 EUR
10+26.44 EUR
100+22.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050B065S-D3 GHXS050B065S-D3.pdf
GHXS050B065S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 650V 95A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 125 µA @ 650 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.91 EUR
10+27.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050B120S-D3 GHXS050B120S_D3-1916892.pdf
GHXS050B120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+72.97 EUR
10+62.02 EUR
20+59.93 EUR
50+57.92 EUR
100+55.93 EUR
200+53.93 EUR
500+51.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050B120S-D3 GHXS050B120S-D3.pdf
GHXS050B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 101A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 101A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050B170S-D3 GHXS050B170S_D3-3476201.pdf
GHXS050B170S-D3
Hersteller: SemiQ
Diode Modules SiC 1700V 50A Schottky Diode Module
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+66.7 EUR
10+56.69 EUR
100+50.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS050B170S-D3 GHXS050B170S-D3.pdf
GHXS050B170S-D3
Hersteller: SemiQ
Description: 1700V, 50A SIC DUAL DIODE MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS060A120S-D3 GHXS060A120S-D3.pdf
GHXS060A120S-D3
Hersteller: SemiQ
Diode Modules 1200V, 60A, SOT-227 diode module
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS060B120S-D3
GHXS060B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 161A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 161A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS060B120S-D3 GHXS060B120S_D3-1916721.pdf
GHXS060B120S-D3
Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B065S-D3 GHXS100B065S_D3.pdf
GHXS100B065S-D3
Hersteller: SemiQ
Diode Modules SiC SBD 650V 100A SiC Power Modules
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.08 EUR
10+34.58 EUR
100+31.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B065S-D3 GHXS100B065S-D3.pdf
GHXS100B065S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 650V 193A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.84 EUR
10+35.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B120S-D3 GHXS100B120S-D3.pdf
GHXS100B120S-D3
Hersteller: SemiQ
Description: DIODE MOD SIC 1200V 198A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.09 EUR
10+53.43 EUR
100+47.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B120S-D3 GHXS100B120S_D3-1916878.pdf
GHXS100B120S-D3
Hersteller: SemiQ
Diode Modules SiC SBD 1200V 100A SiC Power Modules
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.5 EUR
10+51.5 EUR
100+49.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B170S-D3 GHXS100B170S_D3.pdf
GHXS100B170S-D3
Hersteller: SemiQ
Diode Modules SiC 1700V 100A Schottky Diode Module
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.87 EUR
10+83.32 EUR
100+74.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GHXS100B170S-D3 GHXS100B170S-D3_rev0.2.pdf
GHXS100B170S-D3
Hersteller: SemiQ
Description: 1700V, 100A SIC DUAL DIODE MODUL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 214A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.7 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D003A060C GP2D003A060C_REV2_8-27-15.pdf
GP2D003A060C
Hersteller: SemiQ
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GP2D003A060C GP2D003A060C_REV2_8-27-15.pdf
GP2D003A060C
Hersteller: SemiQ
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP2D003A065A GP2D003A065A_REV2_8-27-15.pdf
GP2D003A065A
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 3A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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