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GP3D020A065U GP3D020A065U SemiQ GP3D020A065U.pdf Description: DIODE ARR SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.44 EUR
10+ 8.94 EUR
100+ 7.45 EUR
Mindestbestellmenge: 2
GP3D020A065U GP3D020A065U SemiQ GP3D020A065U-1916793.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
auf Bestellung 606 Stücke:
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1+10.23 EUR
10+ 7.32 EUR
120+ 6.42 EUR
510+ 5.83 EUR
1020+ 5.54 EUR
GP3D020A120B GP3D020A120B SemiQ GP3D020A120B-1916802.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-2
auf Bestellung 30 Stücke:
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1+14.38 EUR
10+ 12.34 EUR
120+ 10.26 EUR
270+ 9.84 EUR
510+ 9.05 EUR
1020+ 8.15 EUR
2520+ 7.78 EUR
GP3D020A120B GP3D020A120B SemiQ GP3D020A120B.pdf Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 1131 Stücke:
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1+20.33 EUR
10+ 18.36 EUR
100+ 15.2 EUR
500+ 13.24 EUR
1000+ 11.65 EUR
GP3D020A120U GP3D020A120U SemiQ GP3D020A120U-1916846.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
auf Bestellung 64 Stücke:
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1+15.38 EUR
120+ 11.56 EUR
270+ 11.33 EUR
510+ 10.93 EUR
1020+ 10.45 EUR
2520+ 10.19 EUR
5010+ 10.12 EUR
GP3D020A170B GP3D020A170B SemiQ GP3D020A170B.pdf Schottky Diodes & Rectifiers SiC Schottky 1700V 203nC 20A
auf Bestellung 53 Stücke:
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GP3D020A170B GP3D020A170B SemiQ GP3D020A170B.pdf Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
auf Bestellung 53 Stücke:
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1+22.3 EUR
10+ 19.65 EUR
GP3D024A065U GP3D024A065U SemiQ GP3D024A065U-1916742.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 24A 650V TO-247-3
auf Bestellung 55 Stücke:
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1+10.45 EUR
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120+ 8.27 EUR
270+ 8.08 EUR
510+ 7.57 EUR
1020+ 6.95 EUR
2520+ 6.74 EUR
GP3D024A065U GP3D024A065U SemiQ 397_5e0bb6c624336-GP3D024A065U_rev1.pdf Description: DIODE SILICON CARBIDE
auf Bestellung 77 Stücke:
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2+13.71 EUR
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Mindestbestellmenge: 2
GP3D030A060B SemiQ Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Produkt ist nicht verfügbar
GP3D030A065B GP3D030A065B SemiQ GP3D030A065B-1916624.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 30A 650V TO-247-2
auf Bestellung 31 Stücke:
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1+10.35 EUR
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270+ 7.08 EUR
510+ 6.49 EUR
1020+ 5.84 EUR
2520+ 5.58 EUR
GP3D030A065B GP3D030A065B SemiQ GP3D030A065B.pdf Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 152 Stücke:
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2+13.31 EUR
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100+ 9.5 EUR
Mindestbestellmenge: 2
GP3D030A120B GP3D030A120B SemiQ GP3D030A120B.pdf Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 155 Stücke:
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1+27.9 EUR
10+ 25.64 EUR
100+ 21.66 EUR
GP3D030A120B GP3D030A120B SemiQ GP3D030A120B-1916827.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-2
auf Bestellung 28 Stücke:
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510+ 18.06 EUR
GP3D030A120U GP3D030A120U SemiQ GP3D030A120U-1916639.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
auf Bestellung 88 Stücke:
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GP3D040A065U GP3D040A065U SemiQ GP3D040A065U-1916860.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 40A 650V TO-247-3
auf Bestellung 38 Stücke:
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1+15.05 EUR
10+ 13.6 EUR
120+ 12.18 EUR
510+ 11.26 EUR
GP3D040A065U GP3D040A065U SemiQ GP3D040A065U.pdf Description: SIC SCHOTTKY DIODE 650V TO247-3
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.45 EUR
10+ 13.05 EUR
Mindestbestellmenge: 2
GP3D040A120U GP3D040A120U SemiQ GP3D040A120U-1916868.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
auf Bestellung 36 Stücke:
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1+23.92 EUR
10+ 21.98 EUR
30+ 21.08 EUR
60+ 20.38 EUR
120+ 18.55 EUR
270+ 17.65 EUR
510+ 16.49 EUR
GP3D050A065B GP3D050A065B SemiQ Description: SIC SCHOTTKY RECTIFIER
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
GP3D050A120B GP3D050A120B SemiQ GP3D050A120B-1915593.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
auf Bestellung 40 Stücke:
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1+42.13 EUR
10+ 38.86 EUR
120+ 33.16 EUR
510+ 29.85 EUR
GP3D050A120B GP3D050A120B SemiQ GP3D050A120B.pdf Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.86 EUR
10+ 39.53 EUR
100+ 33.76 EUR
GP3D060A120B SemiQ Description: DIODE SCHOTTKY 1200V 60A TO247
Produkt ist nicht verfügbar
GP3D060A120U GP3D060A120U SemiQ GP3D060A120U.pdf Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
GP3D060A120U GP3D060A120U SemiQ GP3D060A120U-1916754.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+49.53 EUR
10+ 45.69 EUR
120+ 45.67 EUR
510+ 42.4 EUR
1020+ 40.29 EUR
2520+ 39.62 EUR
GPA015A120MN-ND GPA015A120MN-ND SemiQ GPA015A120MN-ND_REV2.1_10-13.pdf Description: IGBT 1200V 30A 212W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Produkt ist nicht verfügbar
GPA020A120MN-FD GPA020A120MN-FD SemiQ GPA020A120MN-FD_REV1.1_10-13.pdf Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Produkt ist nicht verfügbar
GPA020A135MN-FD GPA020A135MN-FD SemiQ GPA020A135MN-FD_REV0.1_12-13.pdf Description: IGBT 1350V 40A 223W TO3PN
Produkt ist nicht verfügbar
GPA030A120MN-FD GPA030A120MN-FD SemiQ GPA030A120MN-FD_REV1.1_10-13.pdf Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
GPA030A135MN-FDR GPA030A135MN-FDR SemiQ GPA030A135MN-FDR_REV0.0_2-14.pdf Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
GPA040A120L-FD GPA040A120L-FD SemiQ GPA040A120L-FD.pdf Description: IGBT 1200V 80A 480W TO264
Produkt ist nicht verfügbar
GPA040A120L-ND GPA040A120L-ND SemiQ GPA040A120L-ND.pdf Description: IGBT 1200V 80A 455W TO264
Produkt ist nicht verfügbar
GPA040A120MN-FD GPA040A120MN-FD SemiQ GPA040A120MN-FD_REV0.0_3-14.pdf Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
Produkt ist nicht verfügbar
GPA042A100L-ND GPA042A100L-ND SemiQ GPA042A100L-ND_REV1_8-12.pdf Description: IGBT 1000V 60A 463W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 230ns/1480ns
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Test Condition: 600V, 60A, 50Ohm, 15V
Gate Charge: 405 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Produkt ist nicht verfügbar
GPI040A060MN-FD GPI040A060MN-FD SemiQ GPI040A060MN-FD_REV0_9-13.pdf Description: IGBT 600V 80A 231W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/85ns
Switching Energy: 1.46mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 173 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
Produkt ist nicht verfügbar
GSID080A120B1A5 GSID080A120B1A5 SemiQ GSID080A120B1A5.pdf Description: IGBT MOD 1200V 160A 1710W
Produkt ist nicht verfügbar
GSID100A120S5C1 GSID100A120S5C1 SemiQ Description: IGBT MOD 1200V 170A 650W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 650 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120S3B1 GSID150A120S3B1 SemiQ Description: IGBT MODULE 1200V 300A 940W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120S5C1 GSID150A120S5C1 SemiQ Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120S6A4 GSID150A120S6A4 SemiQ GSID150A120S6A4.pdf Description: IGBT MOD 1200V 275A 1035W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1035 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20.2 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120T2C1 GSID150A120T2C1 SemiQ Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Produkt ist nicht verfügbar
GSID200A120S3B1 GSID200A120S3B1 SemiQ GSID200A120S3B1.pdf Description: IGBT MODULE 1200V 400A 1595W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1595 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Produkt ist nicht verfügbar
GSID200A120S5C1 GSID200A120S5C1 SemiQ Description: IGBT MODULE 1200V 335A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 22.4 nF @ 25 V
Produkt ist nicht verfügbar
GSID200A170S3B1 GSID200A170S3B1 SemiQ GSID200A170S3B1.pdf Description: IGBT MODULE 1200V 400A 1630W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
GSID300A120S5C1 GSID300A120S5C1 SemiQ Description: IGBT MOD 1200V 430A 1630W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30 nF @ 25 V
Produkt ist nicht verfügbar
GSID300A125S5C1 GSID300A125S5C1 SemiQ Description: IGBT MOD 1250V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 25 V
Produkt ist nicht verfügbar
GSID600A120S4B1 GSID600A120S4B1 SemiQ Description: IGBT MOD 1200V 1130A 3060W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3060 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Produkt ist nicht verfügbar
GSXD030A004S1-D3 GSXD030A004S1-D3 SemiQ GSXD030A004S1-D3_1-2020.pdf Description: DIODE MOD SCHOTT 45V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
GSXD030A010S1-D3 GSXD030A010S1-D3 SemiQ GSXD030A010S1-D3.pdf Description: DIODE MOD SCHOTT 100V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
GSXD050A012S1-D3 GSXD050A012S1-D3 SemiQ GSXD050A012S1-D3.pdf Description: DIODE SCHOTTKY 120V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.5 EUR
GSXD050A015S1-D3 GSXD050A015S1-D3 SemiQ GSXD050A015S1-D3.pdf Description: DIODE MOD SCHOTT 150V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+56.04 EUR
GSXD050A020S1-D3 GSXD050A020S1-D3 SemiQ GSXD050A020S1-D3.pdf Description: DIODE SCHOTTKY 200V 50A SOT227
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD060A004S1-D3 GSXD060A004S1-D3 SemiQ GSXD060A004S1-D3.pdf Description: DIODE SCHOTTKY 45V 60A SOT227
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD060A006S1-D3 GSXD060A006S1-D3 SemiQ GSXD060A006S1-D3.pdf Description: DIODE SCHOTTKY 60V 60A SOT227
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD060A008S1-D3 GSXD060A008S1-D3 SemiQ GSXD060A008S1-D3.pdf Description: DIODE SCHOTTKY 80V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+66.48 EUR
GSXD060A010S1-D3 GSXD060A010S1-D3 SemiQ GSXD060A010S1-D3.pdf Description: DIODE SCHOTTKY 100V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
GSXD060A012S1-D3 GSXD060A012S1-D3 SemiQ GSXD060A012S1-D3.pdf Description: DIODE SCHOTTKY 120V 60A SOT227
Produkt ist nicht verfügbar
GSXD060A015S1-D3 GSXD060A015S1-D3 SemiQ GSXD060A015S1-D3.pdf Description: DIODE SCHOTTKY 150V 60A SOT227
Produkt ist nicht verfügbar
GSXD060A018S1-D3 GSXD060A018S1-D3 SemiQ GSXD060A018S1-D3.pdf Description: DIODE MOD SCHOTT 180V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
GSXD060A020S1-D3 GSXD060A020S1-D3 SemiQ GSXD060A020S1-D3.pdf Description: DIODE SCHOTTKY 200V 60A SOT227
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD080A004S1-D3 GSXD080A004S1-D3 SemiQ GSXD080A004S1-D3.pdf Description: DIODE MOD SCHOTT 45V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.44 EUR
10+ 55.49 EUR
GP3D020A065U GP3D020A065U.pdf
GP3D020A065U
Hersteller: SemiQ
Description: DIODE ARR SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.44 EUR
10+ 8.94 EUR
100+ 7.45 EUR
Mindestbestellmenge: 2
GP3D020A065U GP3D020A065U-1916793.pdf
GP3D020A065U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
auf Bestellung 606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.23 EUR
10+ 7.32 EUR
120+ 6.42 EUR
510+ 5.83 EUR
1020+ 5.54 EUR
GP3D020A120B GP3D020A120B-1916802.pdf
GP3D020A120B
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-2
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.38 EUR
10+ 12.34 EUR
120+ 10.26 EUR
270+ 9.84 EUR
510+ 9.05 EUR
1020+ 8.15 EUR
2520+ 7.78 EUR
GP3D020A120B GP3D020A120B.pdf
GP3D020A120B
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.33 EUR
10+ 18.36 EUR
100+ 15.2 EUR
500+ 13.24 EUR
1000+ 11.65 EUR
GP3D020A120U GP3D020A120U-1916846.pdf
GP3D020A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.38 EUR
120+ 11.56 EUR
270+ 11.33 EUR
510+ 10.93 EUR
1020+ 10.45 EUR
2520+ 10.19 EUR
5010+ 10.12 EUR
GP3D020A170B GP3D020A170B.pdf
GP3D020A170B
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky 1700V 203nC 20A
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
GP3D020A170B GP3D020A170B.pdf
GP3D020A170B
Hersteller: SemiQ
Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.3 EUR
10+ 19.65 EUR
GP3D024A065U GP3D024A065U-1916742.pdf
GP3D024A065U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 24A 650V TO-247-3
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.45 EUR
10+ 9.47 EUR
120+ 8.27 EUR
270+ 8.08 EUR
510+ 7.57 EUR
1020+ 6.95 EUR
2520+ 6.74 EUR
GP3D024A065U 397_5e0bb6c624336-GP3D024A065U_rev1.pdf
GP3D024A065U
Hersteller: SemiQ
Description: DIODE SILICON CARBIDE
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.71 EUR
10+ 12.4 EUR
Mindestbestellmenge: 2
GP3D030A060B
Hersteller: SemiQ
Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Produkt ist nicht verfügbar
GP3D030A065B GP3D030A065B-1916624.pdf
GP3D030A065B
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 650V TO-247-2
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.35 EUR
10+ 8.85 EUR
120+ 7.37 EUR
270+ 7.08 EUR
510+ 6.49 EUR
1020+ 5.84 EUR
2520+ 5.58 EUR
GP3D030A065B GP3D030A065B.pdf
GP3D030A065B
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.31 EUR
10+ 11.4 EUR
100+ 9.5 EUR
Mindestbestellmenge: 2
GP3D030A120B GP3D030A120B.pdf
GP3D030A120B
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+27.9 EUR
10+ 25.64 EUR
100+ 21.66 EUR
GP3D030A120B GP3D030A120B-1916827.pdf
GP3D030A120B
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-2
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+24.29 EUR
10+ 22.33 EUR
30+ 21.4 EUR
60+ 19.66 EUR
120+ 19.22 EUR
270+ 18.69 EUR
510+ 18.06 EUR
GP3D030A120U GP3D030A120U-1916639.pdf
GP3D030A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
GP3D040A065U GP3D040A065U-1916860.pdf
GP3D040A065U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 650V TO-247-3
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.05 EUR
10+ 13.6 EUR
120+ 12.18 EUR
510+ 11.26 EUR
GP3D040A065U GP3D040A065U.pdf
GP3D040A065U
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 650V TO247-3
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.45 EUR
10+ 13.05 EUR
Mindestbestellmenge: 2
GP3D040A120U GP3D040A120U-1916868.pdf
GP3D040A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.92 EUR
10+ 21.98 EUR
30+ 21.08 EUR
60+ 20.38 EUR
120+ 18.55 EUR
270+ 17.65 EUR
510+ 16.49 EUR
GP3D050A065B
GP3D050A065B
Hersteller: SemiQ
Description: SIC SCHOTTKY RECTIFIER
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
GP3D050A120B GP3D050A120B-1915593.pdf
GP3D050A120B
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+42.13 EUR
10+ 38.86 EUR
120+ 33.16 EUR
510+ 29.85 EUR
GP3D050A120B GP3D050A120B.pdf
GP3D050A120B
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+42.86 EUR
10+ 39.53 EUR
100+ 33.76 EUR
GP3D060A120B
Hersteller: SemiQ
Description: DIODE SCHOTTKY 1200V 60A TO247
Produkt ist nicht verfügbar
GP3D060A120U GP3D060A120U.pdf
GP3D060A120U
Hersteller: SemiQ
Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
GP3D060A120U GP3D060A120U-1916754.pdf
GP3D060A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+49.53 EUR
10+ 45.69 EUR
120+ 45.67 EUR
510+ 42.4 EUR
1020+ 40.29 EUR
2520+ 39.62 EUR
GPA015A120MN-ND GPA015A120MN-ND_REV2.1_10-13.pdf
GPA015A120MN-ND
Hersteller: SemiQ
Description: IGBT 1200V 30A 212W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Produkt ist nicht verfügbar
GPA020A120MN-FD GPA020A120MN-FD_REV1.1_10-13.pdf
GPA020A120MN-FD
Hersteller: SemiQ
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Produkt ist nicht verfügbar
GPA020A135MN-FD GPA020A135MN-FD_REV0.1_12-13.pdf
GPA020A135MN-FD
Hersteller: SemiQ
Description: IGBT 1350V 40A 223W TO3PN
Produkt ist nicht verfügbar
GPA030A120MN-FD GPA030A120MN-FD_REV1.1_10-13.pdf
GPA030A120MN-FD
Hersteller: SemiQ
Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
GPA030A135MN-FDR GPA030A135MN-FDR_REV0.0_2-14.pdf
GPA030A135MN-FDR
Hersteller: SemiQ
Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
GPA040A120L-FD GPA040A120L-FD.pdf
GPA040A120L-FD
Hersteller: SemiQ
Description: IGBT 1200V 80A 480W TO264
Produkt ist nicht verfügbar
GPA040A120L-ND GPA040A120L-ND.pdf
GPA040A120L-ND
Hersteller: SemiQ
Description: IGBT 1200V 80A 455W TO264
Produkt ist nicht verfügbar
GPA040A120MN-FD GPA040A120MN-FD_REV0.0_3-14.pdf
GPA040A120MN-FD
Hersteller: SemiQ
Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
Produkt ist nicht verfügbar
GPA042A100L-ND GPA042A100L-ND_REV1_8-12.pdf
GPA042A100L-ND
Hersteller: SemiQ
Description: IGBT 1000V 60A 463W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 230ns/1480ns
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Test Condition: 600V, 60A, 50Ohm, 15V
Gate Charge: 405 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Produkt ist nicht verfügbar
GPI040A060MN-FD GPI040A060MN-FD_REV0_9-13.pdf
GPI040A060MN-FD
Hersteller: SemiQ
Description: IGBT 600V 80A 231W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/85ns
Switching Energy: 1.46mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 173 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
Produkt ist nicht verfügbar
GSID080A120B1A5 GSID080A120B1A5.pdf
GSID080A120B1A5
Hersteller: SemiQ
Description: IGBT MOD 1200V 160A 1710W
Produkt ist nicht verfügbar
GSID100A120S5C1
GSID100A120S5C1
Hersteller: SemiQ
Description: IGBT MOD 1200V 170A 650W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 650 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120S3B1
GSID150A120S3B1
Hersteller: SemiQ
Description: IGBT MODULE 1200V 300A 940W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120S5C1
GSID150A120S5C1
Hersteller: SemiQ
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120S6A4 GSID150A120S6A4.pdf
GSID150A120S6A4
Hersteller: SemiQ
Description: IGBT MOD 1200V 275A 1035W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1035 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20.2 nF @ 25 V
Produkt ist nicht verfügbar
GSID150A120T2C1
GSID150A120T2C1
Hersteller: SemiQ
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Produkt ist nicht verfügbar
GSID200A120S3B1 GSID200A120S3B1.pdf
GSID200A120S3B1
Hersteller: SemiQ
Description: IGBT MODULE 1200V 400A 1595W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1595 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Produkt ist nicht verfügbar
GSID200A120S5C1
GSID200A120S5C1
Hersteller: SemiQ
Description: IGBT MODULE 1200V 335A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 22.4 nF @ 25 V
Produkt ist nicht verfügbar
GSID200A170S3B1 GSID200A170S3B1.pdf
GSID200A170S3B1
Hersteller: SemiQ
Description: IGBT MODULE 1200V 400A 1630W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
GSID300A120S5C1
GSID300A120S5C1
Hersteller: SemiQ
Description: IGBT MOD 1200V 430A 1630W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30 nF @ 25 V
Produkt ist nicht verfügbar
GSID300A125S5C1
GSID300A125S5C1
Hersteller: SemiQ
Description: IGBT MOD 1250V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 25 V
Produkt ist nicht verfügbar
GSID600A120S4B1
GSID600A120S4B1
Hersteller: SemiQ
Description: IGBT MOD 1200V 1130A 3060W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3060 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Produkt ist nicht verfügbar
GSXD030A004S1-D3 GSXD030A004S1-D3_1-2020.pdf
GSXD030A004S1-D3
Hersteller: SemiQ
Description: DIODE MOD SCHOTT 45V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
GSXD030A010S1-D3 GSXD030A010S1-D3.pdf
GSXD030A010S1-D3
Hersteller: SemiQ
Description: DIODE MOD SCHOTT 100V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
GSXD050A012S1-D3 GSXD050A012S1-D3.pdf
GSXD050A012S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 120V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+62.5 EUR
GSXD050A015S1-D3 GSXD050A015S1-D3.pdf
GSXD050A015S1-D3
Hersteller: SemiQ
Description: DIODE MOD SCHOTT 150V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+56.04 EUR
GSXD050A020S1-D3 GSXD050A020S1-D3.pdf
GSXD050A020S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 200V 50A SOT227
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD060A004S1-D3 GSXD060A004S1-D3.pdf
GSXD060A004S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 45V 60A SOT227
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD060A006S1-D3 GSXD060A006S1-D3.pdf
GSXD060A006S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 60V 60A SOT227
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD060A008S1-D3 GSXD060A008S1-D3.pdf
GSXD060A008S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 80V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+66.48 EUR
GSXD060A010S1-D3 GSXD060A010S1-D3.pdf
GSXD060A010S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 100V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
GSXD060A012S1-D3 GSXD060A012S1-D3.pdf
GSXD060A012S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 120V 60A SOT227
Produkt ist nicht verfügbar
GSXD060A015S1-D3 GSXD060A015S1-D3.pdf
GSXD060A015S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 150V 60A SOT227
Produkt ist nicht verfügbar
GSXD060A018S1-D3 GSXD060A018S1-D3.pdf
GSXD060A018S1-D3
Hersteller: SemiQ
Description: DIODE MOD SCHOTT 180V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
GSXD060A020S1-D3 GSXD060A020S1-D3.pdf
GSXD060A020S1-D3
Hersteller: SemiQ
Description: DIODE SCHOTTKY 200V 60A SOT227
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
GSXD080A004S1-D3 GSXD080A004S1-D3.pdf
GSXD080A004S1-D3
Hersteller: SemiQ
Description: DIODE MOD SCHOTT 45V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+62.44 EUR
10+ 55.49 EUR
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