Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GP3D010A065A | SemiQ |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 419pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D010A065A | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D010A065B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 419pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D010A065B | SemiQ |
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auf Bestellung 92 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D010A065C | SemiQ |
Description: DIODE SILICON CARBIDE Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GP3D010A065D | SemiQ |
![]() Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 10A Voltage - DC Reverse (Vr) (Max): 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D010A065D | SemiQ |
![]() Packaging: Cut Tape (CT) Current - Average Rectified (Io): 10A Voltage - DC Reverse (Vr) (Max): 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D010A120A | SemiQ |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 608pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D010A120A | SemiQ |
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auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D010A120B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 608pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D010A120B | SemiQ |
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auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D010A120S | SemiQ |
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auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D010A170B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 699pF @ 1V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 1700 V |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D010A170B | SemiQ |
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auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D012A065A | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D012A065A | SemiQ |
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auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D012A065B | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D012A065B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 572pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D015A120A | SemiQ |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 962pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D015A120A | SemiQ |
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auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D015A120B | SemiQ |
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auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D015A120B | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D020A065A | SemiQ |
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auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A065A | SemiQ |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D020A065B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 835pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A065B | SemiQ |
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auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A065U | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A065U | SemiQ |
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auf Bestellung 574 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A120B | SemiQ |
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auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A120B | SemiQ |
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auf Bestellung 1131 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A120U | SemiQ |
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auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A170B | SemiQ |
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auf Bestellung 92 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D020A170B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1403pF @ 1V, 1MHz Current - Average Rectified (Io): 67A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 1700 V |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D024A065U | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D024A065U | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
GP3D030A060B | SemiQ |
Description: DIODE SCHOTTKY 600V 30A TO247 Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GP3D030A065B | SemiQ |
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auf Bestellung 66 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D030A065B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D030A120B | SemiQ |
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auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D030A120B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1762pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D030A120U | SemiQ |
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auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D030A120U | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D040A065U | SemiQ |
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auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D040A065U | SemiQ |
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auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D040A120U | SemiQ |
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auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D050A065B | SemiQ | Description: SIC SCHOTTKY RECTIFIER |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GP3D050A120B | SemiQ |
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auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D050A120B | SemiQ |
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auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D050B170B | SemiQ |
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auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D060A120B | SemiQ | Description: DIODE SCHOTTKY 1200V 60A TO247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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GP3D060A120U | SemiQ |
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auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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GP3D060A120U | SemiQ |
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auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA015A120MN-ND | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 320 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-3PN IGBT Type: NPT and Trench Td (on/off) @ 25°C: 25ns/166ns Switching Energy: 1.61mJ (on), 530µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 212 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA020A120MN-FD | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 425 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 2.8mJ (on), 480µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 210 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 223 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA020A135MN-FD | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA025A120MN-ND | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 480 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A Supplier Device Package: TO-3PN IGBT Type: NPT and Trench Td (on/off) @ 25°C: 57ns/240ns Switching Energy: 4.15mJ (on), 870µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 350 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 312 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA030A120MN-FD | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 450 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/245ns Switching Energy: 4.5mJ (on), 850µJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 330 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 329 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA030A135MN-FDR | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 450 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/145ns Switching Energy: 4.4mJ (on), 1.18mJ (off) Test Condition: 600V, 30A, 5Ohm, 15V Gate Charge: 300 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 90 A Power - Max: 329 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA040A120L-FD | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GPA040A120L-ND | SemiQ |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
GP3D010A065A |
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Hersteller: SemiQ
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D010A065A |
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Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D010A065B |
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Hersteller: SemiQ
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D010A065B |
![]() |
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 10A 650V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 10A 650V TO-247-2
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 5.7 EUR |
10+ | 3.73 EUR |
120+ | 3.19 EUR |
510+ | 2.8 EUR |
1020+ | 2.39 EUR |
2520+ | 2.27 EUR |
GP3D010A065D |
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Hersteller: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D010A065D |
![]() |
Hersteller: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D010A120A |
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Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.55 EUR |
GP3D010A120A |
![]() |
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 10A 1200V TO-220
SiC Schottky Diodes SiC Schottky Diode 10A 1200V TO-220
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.83 EUR |
10+ | 7.6 EUR |
100+ | 4.54 EUR |
500+ | 3.75 EUR |
1000+ | 3.61 EUR |
GP3D010A120B |
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Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 608pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D010A120B |
![]() |
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 10A 1200V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 10A 1200V TO-247-2
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.41 EUR |
10+ | 5.54 EUR |
120+ | 4.51 EUR |
510+ | 4.28 EUR |
1020+ | 4.01 EUR |
2520+ | 3.91 EUR |
GP3D010A120S |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 10A 1200V SMC DO-214AB
SiC Schottky Diodes SiC Schottky Diode 10A 1200V SMC DO-214AB
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.66 EUR |
10+ | 6.55 EUR |
100+ | 5.3 EUR |
500+ | 4.7 EUR |
1000+ | 4.05 EUR |
GP3D010A170B |
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Hersteller: SemiQ
Description: DIODE SIL CARB 1.7KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 699pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 699pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.05 EUR |
30+ | 9.26 EUR |
GP3D010A170B |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky 1700V 103nC 10A
SiC Schottky Diodes SiC Schottky 1700V 103nC 10A
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 14.34 EUR |
10+ | 8.82 EUR |
120+ | 8.78 EUR |
270+ | 7.71 EUR |
2520+ | 7.69 EUR |
GP3D012A065A |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 12A 650V TO-220
SiC Schottky Diodes SiC Schottky Diode 12A 650V TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D012A065A |
![]() |
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 12A TO220-2
Description: DIODE SIL CARB 650V 12A TO220-2
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.09 EUR |
10+ | 6.36 EUR |
GP3D012A065B |
![]() |
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 12A 650V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 12A 650V TO-247-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D012A065B |
![]() |
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 12A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 572pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 572pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
GP3D015A120A |
![]() |
Hersteller: SemiQ
Description: DIODE SIL CARB 1.2KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 962pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 962pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.03 EUR |
10+ | 12.67 EUR |
GP3D015A120A |
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Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-220
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 12.78 EUR |
10+ | 10.96 EUR |
100+ | 9.12 EUR |
250+ | 8.92 EUR |
500+ | 8.06 EUR |
1000+ | 6.79 EUR |
5000+ | 6.71 EUR |
GP3D015A120B |
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Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.8 EUR |
10+ | 14.28 EUR |
GP3D015A120B |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-247-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D020A065A |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-220
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.15 EUR |
100+ | 5.95 EUR |
250+ | 5.77 EUR |
500+ | 5.63 EUR |
1000+ | 5.26 EUR |
2500+ | 5.14 EUR |
5000+ | 5.05 EUR |
GP3D020A065A |
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Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D020A065B |
![]() |
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.3 EUR |
30+ | 5.56 EUR |
GP3D020A065B |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-2
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.59 EUR |
10+ | 6.81 EUR |
120+ | 5.83 EUR |
510+ | 5.17 EUR |
1020+ | 4.17 EUR |
GP3D020A065U |
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Hersteller: SemiQ
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.5 EUR |
30+ | 5.38 EUR |
120+ | 5.08 EUR |
510+ | 4.74 EUR |
GP3D020A065U |
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Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
auf Bestellung 574 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.64 EUR |
10+ | 5.26 EUR |
120+ | 4.58 EUR |
GP3D020A120B |
![]() |
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 20A 1200V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 20A 1200V TO-247-2
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 14.38 EUR |
10+ | 12.34 EUR |
120+ | 10.26 EUR |
270+ | 9.84 EUR |
510+ | 9.05 EUR |
1020+ | 8.15 EUR |
2520+ | 7.78 EUR |
GP3D020A120B |
![]() |
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 20.33 EUR |
10+ | 18.36 EUR |
100+ | 15.2 EUR |
500+ | 13.24 EUR |
1000+ | 11.65 EUR |
GP3D020A120U |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 15.38 EUR |
120+ | 11.56 EUR |
270+ | 11.33 EUR |
510+ | 10.93 EUR |
1020+ | 10.45 EUR |
2520+ | 10.19 EUR |
5010+ | 10.12 EUR |
GP3D020A170B |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky 1700V 203nC 20A
Schottky Diodes & Rectifiers SiC Schottky 1700V 203nC 20A
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.86 EUR |
10+ | 20.08 EUR |
30+ | 19.27 EUR |
60+ | 18.62 EUR |
120+ | 16.97 EUR |
270+ | 16.14 EUR |
510+ | 15.08 EUR |
GP3D020A170B |
![]() |
Hersteller: SemiQ
Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.3 EUR |
10+ | 19.65 EUR |
GP3D024A065U |
![]() |
Hersteller: SemiQ
Description: DIODE ARR SIC 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE ARR SIC 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D024A065U |
![]() |
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 24A 650V TO-247-3
SiC Schottky Diodes SiC Schottky Diode 24A 650V TO-247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D030A060B |
Hersteller: SemiQ
Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D030A065B |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.36 EUR |
10+ | 6.2 EUR |
120+ | 6.18 EUR |
10020+ | 6.16 EUR |
GP3D030A065B |
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Hersteller: SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.52 EUR |
30+ | 6.19 EUR |
GP3D030A120B |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 30A 1200V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 30A 1200V TO-247-2
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 14.15 EUR |
10+ | 12.9 EUR |
120+ | 11.93 EUR |
510+ | 11.4 EUR |
1020+ | 10.95 EUR |
GP3D030A120B |
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Hersteller: SemiQ
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D030A120U |
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Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
GP3D030A120U |
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Hersteller: SemiQ
Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.1 EUR |
30+ | 9.5 EUR |
GP3D040A065U |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 40A 650V TO-247-3
SiC Schottky Diodes SiC Schottky Diode 40A 650V TO-247-3
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 13.52 EUR |
10+ | 11.58 EUR |
120+ | 10.16 EUR |
270+ | 9.91 EUR |
510+ | 9.52 EUR |
1020+ | 8.8 EUR |
2520+ | 8.31 EUR |
GP3D040A065U |
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Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 650V TO247-3
Description: SIC SCHOTTKY DIODE 650V TO247-3
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.45 EUR |
10+ | 13.05 EUR |
GP3D040A120U |
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Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23.92 EUR |
10+ | 21.98 EUR |
30+ | 21.08 EUR |
60+ | 20.38 EUR |
120+ | 18.55 EUR |
270+ | 17.65 EUR |
510+ | 16.49 EUR |
GP3D050A065B |
Hersteller: SemiQ
Description: SIC SCHOTTKY RECTIFIER
Description: SIC SCHOTTKY RECTIFIER
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
GP3D050A120B |
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Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 42.86 EUR |
10+ | 39.53 EUR |
100+ | 33.76 EUR |
GP3D050A120B |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 30.64 EUR |
10+ | 29.27 EUR |
30+ | 24.82 EUR |
120+ | 23.34 EUR |
270+ | 22.93 EUR |
510+ | 21.16 EUR |
1020+ | 20.19 EUR |
GP3D050B170B |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 50A 1700V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 50A 1700V TO-247-2
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 26.52 EUR |
10+ | 23.37 EUR |
120+ | 20.2 EUR |
270+ | 19.57 EUR |
GP3D060A120B |
Hersteller: SemiQ
Description: DIODE SCHOTTKY 1200V 60A TO247
Description: DIODE SCHOTTKY 1200V 60A TO247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GP3D060A120U |
![]() |
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 49.53 EUR |
10+ | 45.69 EUR |
120+ | 45.67 EUR |
510+ | 42.4 EUR |
1020+ | 40.29 EUR |
2520+ | 39.62 EUR |
GP3D060A120U |
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Hersteller: SemiQ
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
GPA015A120MN-ND |
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Hersteller: SemiQ
Description: IGBT NPT/TRENCH 1200V 30A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Description: IGBT NPT/TRENCH 1200V 30A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA020A120MN-FD |
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Hersteller: SemiQ
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA020A135MN-FD |
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Hersteller: SemiQ
Description: IGBT 1350V 40A 223W TO3PN
Description: IGBT 1350V 40A 223W TO3PN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA025A120MN-ND |
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Hersteller: SemiQ
Description: IGBT 1200V 50A 312W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 480 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 57ns/240ns
Switching Energy: 4.15mJ (on), 870µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 312 W
Description: IGBT 1200V 50A 312W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 480 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 57ns/240ns
Switching Energy: 4.15mJ (on), 870µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 312 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA030A120MN-FD |
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Hersteller: SemiQ
Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA030A135MN-FDR |
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Hersteller: SemiQ
Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA040A120L-FD |
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Hersteller: SemiQ
Description: IGBT 1200V 80A 480W TO264
Description: IGBT 1200V 80A 480W TO264
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GPA040A120L-ND |
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Hersteller: SemiQ
Description: IGBT 1200V 80A 455W TO264
Description: IGBT 1200V 80A 455W TO264
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH