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GP3D020A065U GP3D020A065U SemiQ GP3D020A065U.pdf Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.5 EUR
30+5.38 EUR
120+5.08 EUR
510+4.74 EUR
Mindestbestellmenge: 3
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GP3D020A065U GP3D020A065U SemiQ GP3D020A065U-1916793.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
auf Bestellung 574 Stücke:
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1+6.64 EUR
10+5.26 EUR
120+4.58 EUR
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GP3D020A120B GP3D020A120B SemiQ GP3D020A120B.pdf SiC Schottky Diodes SiC Schottky Diode 20A 1200V TO-247-2
auf Bestellung 720 Stücke:
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1+10.44 EUR
10+8.59 EUR
120+7.36 EUR
510+6.97 EUR
1020+6.55 EUR
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GP3D020A120B GP3D020A120B SemiQ GP3D020A120B.pdf Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.33 EUR
10+18.36 EUR
100+15.2 EUR
500+13.24 EUR
1000+11.65 EUR
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GP3D020A120U GP3D020A120U SemiQ GP3D020A120U-1916846.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.38 EUR
120+11.56 EUR
270+11.33 EUR
510+10.93 EUR
1020+10.45 EUR
2520+10.19 EUR
5010+10.12 EUR
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GP3D020A170B GP3D020A170B SemiQ GP3D020A170B.pdf SiC Schottky Diodes SiC Schottky 1700V 203nC 20A
auf Bestellung 176 Stücke:
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1+14.68 EUR
10+8.78 EUR
120+8.5 EUR
510+6.46 EUR
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GP3D020A170B GP3D020A170B SemiQ GP3D020A170B.pdf Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
auf Bestellung 53 Stücke:
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1+22.3 EUR
10+19.65 EUR
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GP3D024A065U GP3D024A065U SemiQ GP3D024A065U-1916742.pdf SiC Schottky Diodes SiC Schottky Diode 24A 650V TO-247-3
Produkt ist nicht verfügbar
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GP3D024A065U GP3D024A065U SemiQ GP3D024A065U.pdf Description: DIODE ARR SIC 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
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GP3D030A060B SemiQ Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Produkt ist nicht verfügbar
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GP3D030A065B GP3D030A065B SemiQ GP3D030A065B-1916624.pdf SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2
auf Bestellung 66 Stücke:
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1+9.36 EUR
10+6.2 EUR
120+6.18 EUR
10020+6.16 EUR
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GP3D030A065B GP3D030A065B SemiQ GP3D030A065B.pdf Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 30 Stücke:
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2+10.52 EUR
30+6.19 EUR
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GP3D030A120B GP3D030A120B SemiQ GP3D030A120B.pdf Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Produkt ist nicht verfügbar
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GP3D030A120B GP3D030A120B SemiQ GP3D030A120B-1916827.pdf SiC Schottky Diodes SiC Schottky Diode 30A 1200V TO-247-2
auf Bestellung 8 Stücke:
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1+14.15 EUR
10+12.9 EUR
120+11.93 EUR
510+11.4 EUR
1020+10.95 EUR
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GP3D030A120U GP3D030A120U SemiQ GP3D030A120U.pdf Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 33 Stücke:
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2+16.1 EUR
30+9.5 EUR
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GP3D030A120U GP3D030A120U SemiQ GP3D030A120U-1916639.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
auf Bestellung 88 Stücke:
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GP3D040A065U GP3D040A065U SemiQ GP3D040A065U.pdf Description: SIC SCHOTTKY DIODE 650V TO247-3
auf Bestellung 10 Stücke:
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2+14.45 EUR
10+13.05 EUR
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GP3D040A065U GP3D040A065U SemiQ GP3D040A065U.pdf SiC Schottky Diodes SiC Schottky Diode 40A 650V TO-247-3
auf Bestellung 7 Stücke:
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1+11.21 EUR
10+9.4 EUR
120+7.78 EUR
510+7 EUR
1020+6.53 EUR
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GP3D040A120U GP3D040A120U SemiQ GP3D040A120U-1916868.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
auf Bestellung 36 Stücke:
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1+23.92 EUR
10+21.98 EUR
30+21.08 EUR
60+20.38 EUR
120+18.55 EUR
270+17.65 EUR
510+16.49 EUR
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GP3D050A065B GP3D050A065B SemiQ Description: SIC SCHOTTKY RECTIFIER
auf Bestellung 120 Stücke:
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GP3D050A065B SemiQ DIODE SIL CARB 650V 135A TO247-2 Група товару: Діоди та діодні збірки Од. вим: шт
Produkt ist nicht verfügbar
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GP3D050A120B GP3D050A120B SemiQ GP3D050A120B.pdf Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.86 EUR
10+39.53 EUR
100+33.76 EUR
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GP3D050A120B GP3D050A120B SemiQ GP3D050A120B-1915593.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.64 EUR
10+29.27 EUR
30+24.82 EUR
120+23.34 EUR
270+22.93 EUR
510+21.16 EUR
1020+20.19 EUR
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GP3D050B170B GP3D050B170B SemiQ GP3D050B170B.pdf Description: 1700V, 50A SIC DIODE, TO-247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3511pF @ 1V, 1MHz
Current - Average Rectified (Io): 151A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.88 EUR
30+17.29 EUR
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GP3D050B170B GP3D050B170B SemiQ GP3D050B170B.pdf SiC Schottky Diodes SiC Schottky Diode 50A 1700V TO-247-2
auf Bestellung 175 Stücke:
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1+26.17 EUR
10+21.16 EUR
120+18.29 EUR
510+17.49 EUR
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GP3D050B170B SemiQ GP3D050B170B.pdf 1700V, 50A SIC DIODE, TO-247-2L Група товару: Діоди та діодні збірки Од. вим: шт
Produkt ist nicht verfügbar
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GP3D060A120B SemiQ Description: DIODE SCHOTTKY 1200V 60A TO247
Produkt ist nicht verfügbar
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GP3D060A120U GP3D060A120U SemiQ GP3D060A120U.pdf Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 60 Stücke:
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GP3D060A120U GP3D060A120U SemiQ GP3D060A120U-1916754.pdf Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+49.53 EUR
10+45.69 EUR
120+45.67 EUR
510+42.4 EUR
1020+40.29 EUR
2520+39.62 EUR
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GP3T014A120H GP3T014A120H SemiQ GP3T014A120H.pdf Description: GEN3 1200V 14M SIC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6242 pF @ 1000 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.77 EUR
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GP3T016A120H GP3T016A120H SemiQ GP3T016A120H.pdf SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L
Produkt ist nicht verfügbar
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GP3T016A120H GP3T016A120H SemiQ GP3T016A120H.pdf Description: GEN3 1200V, 16M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.59 EUR
10+14.38 EUR
100+10.87 EUR
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GP3T016A120TS SemiQ GP3T016A120TS.pdf Description: GEN3 1200V 16M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.59 EUR
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GP3T017A120H GP3T017A120H SemiQ GP3T017A120H.pdf Description: GEN3 1200V 17M SIC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5828 pF @ 1000 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.99 EUR
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GP3T020A120H GP3T020A120H SemiQ GP3T020A120H.pdf SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.6 EUR
10+10.68 EUR
120+10.67 EUR
510+9.84 EUR
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GP3T020A120H GP3T020A120H SemiQ GP3T020A120H.pdf Description: GEN3 1200V, 20M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.81 EUR
30+11.29 EUR
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GP3T020A120TS SemiQ GP3T020A120TS.pdf Description: GEN3 1200V 20M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.88 EUR
36+10.48 EUR
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GP3T034A120H GP3T034A120H SemiQ GP3T034A120H.pdf Description: GEN3 1200V 34M SIC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 18V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2584 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.72 EUR
30+7.38 EUR
Mindestbestellmenge: 2
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GP3T040A120H GP3T040A120H SemiQ GP3T040A120H.pdf SiC MOSFETs Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.81 EUR
10+8.06 EUR
120+5.9 EUR
510+5.26 EUR
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GP3T040A120H GP3T040A120H SemiQ GP3T040A120H.pdf Description: GEN3 1200V, 40M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2803 pF @ 1000 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.55 EUR
10+8.52 EUR
Mindestbestellmenge: 2
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GP3T040A120TS SemiQ GP3T040A120TS.pdf Description: GEN3 1200V 40M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2803 pF @ 1000 V
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GP3T080A120H GP3T080A120H SemiQ GP3T080A120H.pdf Description: GEN3 1200V, 80M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
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GP3T080A120H GP3T080A120H SemiQ GP3T080A120H.pdf SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
auf Bestellung 122 Stücke:
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GP3T080A120J SemiQ GP3T080A120J.pdf Description: GEN3 1200V 80M SIC MOSFET TO-263
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
auf Bestellung 50 Stücke:
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GP3T080A120TS SemiQ GP3T080A120TS.pdf Description: GEN3 1200V 80M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
auf Bestellung 26 Stücke:
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3+8.71 EUR
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GPA015A120MN-ND GPA015A120MN-ND SemiQ GPA015A120MN-ND_REV2.1_10-13.pdf Description: IGBT NPT/TRENCH 1200V 30A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Produkt ist nicht verfügbar
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GPA020A120MN-FD GPA020A120MN-FD SemiQ GPA020A120MN-FD_REV1.1_10-13.pdf Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Produkt ist nicht verfügbar
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GPA020A135MN-FD GPA020A135MN-FD SemiQ GPA020A135MN-FD_REV0.1_12-13.pdf Description: IGBT 1350V 40A 223W TO3PN
Produkt ist nicht verfügbar
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GPA025A120MN-ND GPA025A120MN-ND SemiQ GPA025A120MN-ND_REV1.1_10-13.pdf Description: IGBT 1200V 50A 312W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 480 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 57ns/240ns
Switching Energy: 4.15mJ (on), 870µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 312 W
Produkt ist nicht verfügbar
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GPA030A120MN-FD GPA030A120MN-FD SemiQ GPA030A120MN-FD_REV1.1_10-13.pdf Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
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GPA030A135MN-FDR GPA030A135MN-FDR SemiQ GPA030A135MN-FDR_REV0.0_2-14.pdf Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Produkt ist nicht verfügbar
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GPA040A120L-FD GPA040A120L-FD SemiQ GPA040A120L-FD.pdf Description: IGBT 1200V 80A 480W TO264
Produkt ist nicht verfügbar
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GPA040A120L-ND GPA040A120L-ND SemiQ GPA040A120L-ND.pdf Description: IGBT 1200V 80A 455W TO264
Produkt ist nicht verfügbar
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GPA040A120MN-FD GPA040A120MN-FD SemiQ GPA040A120MN-FD_REV0.0_3-14.pdf Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
Produkt ist nicht verfügbar
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GPA042A100L-ND GPA042A100L-ND SemiQ GPA042A100L-ND_REV1_8-12.pdf Description: IGBT 1000V 60A 463W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 230ns/1480ns
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Test Condition: 600V, 60A, 50Ohm, 15V
Gate Charge: 405 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Produkt ist nicht verfügbar
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GPI040A060MN-FD GPI040A060MN-FD SemiQ GPI040A060MN-FD_REV0_9-13.pdf Description: IGBT 600V 80A 231W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/85ns
Switching Energy: 1.46mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 173 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
Produkt ist nicht verfügbar
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GSID080A120B1A5 GSID080A120B1A5 SemiQ GSID080A120B1A5.pdf Description: IGBT MOD 1200V 160A 1710W
Produkt ist nicht verfügbar
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GSID100A120S5C1 GSID100A120S5C1 SemiQ Description: IGBT MOD 1200V 170A 650W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 650 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
Produkt ist nicht verfügbar
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GSID150A120S3B1 GSID150A120S3B1 SemiQ Description: IGBT MODULE 1200V 300A 940W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
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GSID150A120S5C1 GSID150A120S5C1 SemiQ Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Produkt ist nicht verfügbar
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GP3D020A065U GP3D020A065U.pdf
GP3D020A065U
Hersteller: SemiQ
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.5 EUR
30+5.38 EUR
120+5.08 EUR
510+4.74 EUR
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GP3D020A065U GP3D020A065U-1916793.pdf
GP3D020A065U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
auf Bestellung 574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.64 EUR
10+5.26 EUR
120+4.58 EUR
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GP3D020A120B GP3D020A120B.pdf
GP3D020A120B
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 20A 1200V TO-247-2
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.44 EUR
10+8.59 EUR
120+7.36 EUR
510+6.97 EUR
1020+6.55 EUR
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GP3D020A120B GP3D020A120B.pdf
GP3D020A120B
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 1131 Stücke:
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Anzahl Preis
1+20.33 EUR
10+18.36 EUR
100+15.2 EUR
500+13.24 EUR
1000+11.65 EUR
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GP3D020A120U GP3D020A120U-1916846.pdf
GP3D020A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.38 EUR
120+11.56 EUR
270+11.33 EUR
510+10.93 EUR
1020+10.45 EUR
2520+10.19 EUR
5010+10.12 EUR
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GP3D020A170B GP3D020A170B.pdf
GP3D020A170B
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky 1700V 203nC 20A
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.68 EUR
10+8.78 EUR
120+8.5 EUR
510+6.46 EUR
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GP3D020A170B GP3D020A170B.pdf
GP3D020A170B
Hersteller: SemiQ
Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
auf Bestellung 53 Stücke:
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Anzahl Preis
1+22.3 EUR
10+19.65 EUR
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GP3D024A065U GP3D024A065U-1916742.pdf
GP3D024A065U
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 24A 650V TO-247-3
Produkt ist nicht verfügbar
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GP3D024A065U GP3D024A065U.pdf
GP3D024A065U
Hersteller: SemiQ
Description: DIODE ARR SIC 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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GP3D030A060B
Hersteller: SemiQ
Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Produkt ist nicht verfügbar
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GP3D030A065B GP3D030A065B-1916624.pdf
GP3D030A065B
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.36 EUR
10+6.2 EUR
120+6.18 EUR
10020+6.16 EUR
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GP3D030A065B GP3D030A065B.pdf
GP3D030A065B
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 30 Stücke:
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Anzahl Preis
2+10.52 EUR
30+6.19 EUR
Mindestbestellmenge: 2
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GP3D030A120B GP3D030A120B.pdf
GP3D030A120B
Hersteller: SemiQ
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Produkt ist nicht verfügbar
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GP3D030A120B GP3D030A120B-1916827.pdf
GP3D030A120B
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 30A 1200V TO-247-2
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.15 EUR
10+12.9 EUR
120+11.93 EUR
510+11.4 EUR
1020+10.95 EUR
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GP3D030A120U GP3D030A120U.pdf
GP3D030A120U
Hersteller: SemiQ
Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.1 EUR
30+9.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP3D030A120U GP3D030A120U-1916639.pdf
GP3D030A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
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GP3D040A065U GP3D040A065U.pdf
GP3D040A065U
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 650V TO247-3
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.45 EUR
10+13.05 EUR
Mindestbestellmenge: 2
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GP3D040A065U GP3D040A065U.pdf
GP3D040A065U
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 40A 650V TO-247-3
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.21 EUR
10+9.4 EUR
120+7.78 EUR
510+7 EUR
1020+6.53 EUR
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GP3D040A120U GP3D040A120U-1916868.pdf
GP3D040A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.92 EUR
10+21.98 EUR
30+21.08 EUR
60+20.38 EUR
120+18.55 EUR
270+17.65 EUR
510+16.49 EUR
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GP3D050A065B
GP3D050A065B
Hersteller: SemiQ
Description: SIC SCHOTTKY RECTIFIER
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
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GP3D050A065B
Hersteller: SemiQ
DIODE SIL CARB 650V 135A TO247-2 Група товару: Діоди та діодні збірки Од. вим: шт
Produkt ist nicht verfügbar
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GP3D050A120B GP3D050A120B.pdf
GP3D050A120B
Hersteller: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.86 EUR
10+39.53 EUR
100+33.76 EUR
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GP3D050A120B GP3D050A120B-1915593.pdf
GP3D050A120B
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.64 EUR
10+29.27 EUR
30+24.82 EUR
120+23.34 EUR
270+22.93 EUR
510+21.16 EUR
1020+20.19 EUR
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GP3D050B170B GP3D050B170B.pdf
GP3D050B170B
Hersteller: SemiQ
Description: 1700V, 50A SIC DIODE, TO-247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3511pF @ 1V, 1MHz
Current - Average Rectified (Io): 151A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.88 EUR
30+17.29 EUR
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GP3D050B170B GP3D050B170B.pdf
GP3D050B170B
Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 50A 1700V TO-247-2
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.17 EUR
10+21.16 EUR
120+18.29 EUR
510+17.49 EUR
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GP3D050B170B GP3D050B170B.pdf
Hersteller: SemiQ
1700V, 50A SIC DIODE, TO-247-2L Група товару: Діоди та діодні збірки Од. вим: шт
Produkt ist nicht verfügbar
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GP3D060A120B
Hersteller: SemiQ
Description: DIODE SCHOTTKY 1200V 60A TO247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GP3D060A120U GP3D060A120U.pdf
GP3D060A120U
Hersteller: SemiQ
Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GP3D060A120U GP3D060A120U-1916754.pdf
GP3D060A120U
Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+49.53 EUR
10+45.69 EUR
120+45.67 EUR
510+42.4 EUR
1020+40.29 EUR
2520+39.62 EUR
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GP3T014A120H GP3T014A120H.pdf
GP3T014A120H
Hersteller: SemiQ
Description: GEN3 1200V 14M SIC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6242 pF @ 1000 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.77 EUR
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GP3T016A120H GP3T016A120H.pdf
GP3T016A120H
Hersteller: SemiQ
SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L
Produkt ist nicht verfügbar
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GP3T016A120H GP3T016A120H.pdf
GP3T016A120H
Hersteller: SemiQ
Description: GEN3 1200V, 16M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.59 EUR
10+14.38 EUR
100+10.87 EUR
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GP3T016A120TS GP3T016A120TS.pdf
Hersteller: SemiQ
Description: GEN3 1200V 16M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.59 EUR
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GP3T017A120H GP3T017A120H.pdf
GP3T017A120H
Hersteller: SemiQ
Description: GEN3 1200V 17M SIC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5828 pF @ 1000 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.99 EUR
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GP3T020A120H GP3T020A120H.pdf
GP3T020A120H
Hersteller: SemiQ
SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.6 EUR
10+10.68 EUR
120+10.67 EUR
510+9.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP3T020A120H GP3T020A120H.pdf
GP3T020A120H
Hersteller: SemiQ
Description: GEN3 1200V, 20M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.81 EUR
30+11.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP3T020A120TS GP3T020A120TS.pdf
Hersteller: SemiQ
Description: GEN3 1200V 20M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.88 EUR
36+10.48 EUR
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GP3T034A120H GP3T034A120H.pdf
GP3T034A120H
Hersteller: SemiQ
Description: GEN3 1200V 34M SIC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 18V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2584 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.72 EUR
30+7.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP3T040A120H GP3T040A120H.pdf
GP3T040A120H
Hersteller: SemiQ
SiC MOSFETs Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.81 EUR
10+8.06 EUR
120+5.9 EUR
510+5.26 EUR
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GP3T040A120H GP3T040A120H.pdf
GP3T040A120H
Hersteller: SemiQ
Description: GEN3 1200V, 40M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2803 pF @ 1000 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.55 EUR
10+8.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP3T040A120TS GP3T040A120TS.pdf
Hersteller: SemiQ
Description: GEN3 1200V 40M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2803 pF @ 1000 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.55 EUR
36+7.1 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP3T080A120H GP3T080A120H.pdf
GP3T080A120H
Hersteller: SemiQ
Description: GEN3 1200V, 80M SIC MOSFET, TO-2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.19 EUR
10+6.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP3T080A120H GP3T080A120H.pdf
GP3T080A120H
Hersteller: SemiQ
SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.03 EUR
10+5.81 EUR
120+4.17 EUR
510+3.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GP3T080A120J GP3T080A120J.pdf
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET TO-263
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.19 EUR
50+4.83 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GP3T080A120TS GP3T080A120TS.pdf
Hersteller: SemiQ
Description: GEN3 1200V 80M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.71 EUR
Mindestbestellmenge: 3
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GPA015A120MN-ND GPA015A120MN-ND_REV2.1_10-13.pdf
GPA015A120MN-ND
Hersteller: SemiQ
Description: IGBT NPT/TRENCH 1200V 30A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GPA020A120MN-FD GPA020A120MN-FD_REV1.1_10-13.pdf
GPA020A120MN-FD
Hersteller: SemiQ
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Produkt ist nicht verfügbar
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GPA020A135MN-FD GPA020A135MN-FD_REV0.1_12-13.pdf
GPA020A135MN-FD
Hersteller: SemiQ
Description: IGBT 1350V 40A 223W TO3PN
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GPA025A120MN-ND GPA025A120MN-ND_REV1.1_10-13.pdf
GPA025A120MN-ND
Hersteller: SemiQ
Description: IGBT 1200V 50A 312W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 480 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 57ns/240ns
Switching Energy: 4.15mJ (on), 870µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 312 W
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GPA030A120MN-FD GPA030A120MN-FD_REV1.1_10-13.pdf
GPA030A120MN-FD
Hersteller: SemiQ
Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
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GPA030A135MN-FDR GPA030A135MN-FDR_REV0.0_2-14.pdf
GPA030A135MN-FDR
Hersteller: SemiQ
Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
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GPA040A120L-FD GPA040A120L-FD.pdf
GPA040A120L-FD
Hersteller: SemiQ
Description: IGBT 1200V 80A 480W TO264
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GPA040A120L-ND GPA040A120L-ND.pdf
GPA040A120L-ND
Hersteller: SemiQ
Description: IGBT 1200V 80A 455W TO264
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GPA040A120MN-FD GPA040A120MN-FD_REV0.0_3-14.pdf
GPA040A120MN-FD
Hersteller: SemiQ
Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
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GPA042A100L-ND GPA042A100L-ND_REV1_8-12.pdf
GPA042A100L-ND
Hersteller: SemiQ
Description: IGBT 1000V 60A 463W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 230ns/1480ns
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Test Condition: 600V, 60A, 50Ohm, 15V
Gate Charge: 405 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
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GPI040A060MN-FD GPI040A060MN-FD_REV0_9-13.pdf
GPI040A060MN-FD
Hersteller: SemiQ
Description: IGBT 600V 80A 231W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/85ns
Switching Energy: 1.46mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 173 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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GSID080A120B1A5 GSID080A120B1A5.pdf
GSID080A120B1A5
Hersteller: SemiQ
Description: IGBT MOD 1200V 160A 1710W
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GSID100A120S5C1
GSID100A120S5C1
Hersteller: SemiQ
Description: IGBT MOD 1200V 170A 650W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 650 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
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GSID150A120S3B1
GSID150A120S3B1
Hersteller: SemiQ
Description: IGBT MODULE 1200V 300A 940W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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GSID150A120S5C1
GSID150A120S5C1
Hersteller: SemiQ
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
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