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STM32L452VEI6 STMicroelectronics stm32l452cc.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; UFBGA100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: UFBGA100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
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STM32L452VET3 STMicroelectronics stm32l452cc.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
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ESDZV18-1BF4 STMicroelectronics ESDZV18-1BF4.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 140W; 6A; bidirectional; 0201
Type of diode: TVS
Version: ESD
Max. off-state voltage: 16V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 0.14kW
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ESDZV5-1BF4 STMicroelectronics dm00344091.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 70W; 7A; bidirectional; 0201
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5.5V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 70W
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ESDL031-1BF4 STMicroelectronics dm00648694.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 45W; 5÷6.6V; 7A; bidirectional; 0201
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5...6.6V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 45W
Capacitance: 12pF
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STL25N60M2-EP STMicroelectronics en.DM00150214.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PowerFLAT 8x8
On-state resistance: 0.205Ω
Mounting: SMD
Pulsed drain current: 64A
Power dissipation: 125W
Gate charge: 29nC
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STP25N60M2-EP STP25N60M2-EP STMicroelectronics STP25N60M2-EP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Polarisation: unipolar
Technology: MDmesh™ M2
Drain current: 11.3A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO220-3
On-state resistance: 188mΩ
Mounting: THT
Pulsed drain current: 72A
Power dissipation: 150W
Gate charge: 29nC
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STS1DNC45 STS1DNC45 STMicroelectronics sts1dnc45.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.25A; Idm: 1.6A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 1.6A
Polarisation: unipolar
Drain current: 0.25A
Kind of channel: enhancement
Drain-source voltage: 450V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: SO8
On-state resistance: 4.5Ω
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STB11N65M5 STB11N65M5 STMicroelectronics stb11n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
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STP11N65M2 STP11N65M2 STMicroelectronics en.DM00116928.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 12.5nC
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STP11N65M5 STP11N65M5 STMicroelectronics en.DM00049307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
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STL11N65M5 STMicroelectronics en.DM00116135.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 8.5A
Power dissipation: 70W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 34A
Gate charge: 17nC
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M41T00SM6F M41T00SM6F STMicroelectronics m41t00s.pdf Category: RTC circuits
Description: IC: RTC circuit; I2C; SRAM; SO8; 2.7÷5.5V
Kind of memory: SRAM
Mounting: SMD
Type of integrated circuit: RTC circuit
DC supply current: 300µA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Time keeping current: 0.6µA
Case: SO8
Interface: I2C
Operating voltage: 2.7...5.5V
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STP5NK60Z STP5NK60Z STMicroelectronics en.CD00003042.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 34nC
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STD4NK60Z-1 STD4NK60Z-1 STMicroelectronics std4nk60z-1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 26nC
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STD2HNK60Z STD2HNK60Z STMicroelectronics std2hnk60z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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STQ2HNK60ZR-AP STQ2HNK60ZR-AP STMicroelectronics en.CD00003701.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 500mA; Idm: 2A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.5A
Power dissipation: 3W
Case: TO92 Formed
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: 2A
Gate charge: 11nC
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STB9NK60ZT4 STB9NK60ZT4 STMicroelectronics STB9NK60Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STB4NK60Z-1 STMicroelectronics en.CD00003002.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70W; TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 70W
Case: TO262-3
Mounting: THT
Gate charge: 26nC
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STD2HNK60Z-1 STMicroelectronics en.CD00003701.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 4.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 11nC
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STM32MP131AAF3 STMicroelectronics stm32mp131a.pdf Category: ST microcontrollers
Description: IC: ARM microprocessor; 650MHz; -40÷125°C; Core: 32-bit
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: ARM microprocessor
Clock frequency: 650MHz
Kind of core: 32-bit
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SCT1000N170 SCT1000N170 STMicroelectronics sct1000n170.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 7A
Power dissipation: 96W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Pulsed drain current: 20A
Kind of package: tube
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SCT30N120 SCT30N120 STMicroelectronics SCT30N120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of channel: enhancement
Pulsed drain current: 90A
Kind of package: tube
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SMCJ188A-TR STMicroelectronics cd00001367.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 209V; 26A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2µA
Manufacturer series: SMCJ
Number of channels: 1
Capacitance: 0.15nF
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SMAJ170A-TR SMAJ170A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189V; 6.5A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ170CA-TR SMAJ170CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189V; 6.5A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SM6T75CAY SM6T75CAY STMicroelectronics sm6t75cay.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 75V; 5.8A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 5.8A
Max. off-state voltage: 64.1V
Breakdown voltage: 75V
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Semiconductor structure: bidirectional
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IPS4260L IPS4260L STMicroelectronics ips4260l.pdf Category: Drivers - integrated circuits
Description: IC: power switch; low-side; 55V; 2A; HTSSOP20; Usup: 8÷50V
Number of channels: 1
On-state resistance: 0.26Ω
Mounting: SMD
Supply voltage: 8...50V
Output current: 2A
Type of integrated circuit: power switch
Output voltage: 55V
Case: HTSSOP20
Kind of integrated circuit: low-side
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STEVAL-IFP029V1 STMicroelectronics steval-ifp029v1.pdf Category: STM development kits
Description: Dev.kit: evaluation; Comp: IPS4260L; 100kHz; 8÷36VDC
Type of development kit: evaluation
Components: IPS4260L
Associated circuits: STEVALPCC009V2
Connection: pin header; screw
Frequency: 0.1MHz
Operating voltage: 8...36V DC
Programmers and development kits features: low-side driver
Kit contents: expansion board
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STPS2150AFN STMicroelectronics stps2150.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Max. forward impulse current: 70A
Kind of package: reel; tape
Max. load current: 30A
Leakage current: 1.5mA
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LMV824AIDT LMV824AIDT STMicroelectronics lmv824a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV824IPT LMV824IPT STMicroelectronics lmv824.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV822IDT LMV822IDT STMicroelectronics lmv822.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
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LMV823AIST STMicroelectronics lmv823a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO10
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO10
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
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LMV822AIDT LMV822AIDT STMicroelectronics lmv822a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
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LMV822AIST STMicroelectronics lmv822a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
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LMV822AIYDT LMV822AIYDT STMicroelectronics lmv822a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Application: automotive industry
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LMV822AIYST STMicroelectronics lmv822a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Application: automotive industry
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LMV822IQ2T LMV822IQ2T STMicroelectronics lmv822.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; DFN8; 4mV
Case: DFN8
Mounting: SMT
Input offset voltage: 4mV
Slew rate: 1.9V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
Number of channels: 2
Bandwidth: 5.5MHz
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LMV822IST STMicroelectronics lmv822.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
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LMV822IYST STMicroelectronics lmv822.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Application: automotive industry
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LMV823IST STMicroelectronics lmv823.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO10
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO10
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
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LMV824AIPT LMV824AIPT STMicroelectronics lmv824a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV824AIYDT LMV824AIYDT STMicroelectronics lmv824a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Application: automotive industry
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV824AIYPT LMV824AIYPT STMicroelectronics lmv824a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Application: automotive industry
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV824IDT LMV824IDT STMicroelectronics lmv824.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Input offset voltage: 4mV
Slew rate: 1.7V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV824IYDT LMV824IYDT STMicroelectronics lmv824.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Application: automotive industry
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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MJD3055T4 MJD3055T4 STMicroelectronics mjd3055t4.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 5...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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STM32G474VET3TR STM32G474VET3TR STMicroelectronics stm32g474re.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 7
Kind of package: reel; tape
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Case: LQFP100
Family: STM32G4
Number of 32bit timers: 2
Mounting: SMD
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 86
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Clock frequency: 170MHz
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STM32G474VET6TR STM32G474VET6TR STMicroelectronics stm32g474ve.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 7
Kind of package: reel; tape
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Case: LQFP100
Family: STM32G4
Number of 32bit timers: 2
Mounting: SMD
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 86
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Clock frequency: 170MHz
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STW5NK100Z STW5NK100Z STMicroelectronics stp5nk100z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 3.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STTH2002DI STTH2002DI STMicroelectronics en.CD00110358.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 175A; TO220AC; tube; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 22ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 35A
Max. forward impulse current: 175A
Kind of package: tube
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SM6T12AY SM6T12AY STMicroelectronics SM6TxxY.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 10.2V
Max. forward impulse current: 36A
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Breakdown voltage: 12V
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Semiconductor structure: unidirectional
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STM8S903F3P6TR STM8S903F3P6TR STMicroelectronics STM8S903F3-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM32L010R8T6 STMicroelectronics Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 256B EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 3
Family: STM32L0
Kind of package: in-tray
Kind of core: 32-bit
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STM32L010RBT6 STMicroelectronics stm32l010rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 512B EEPROM; 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 3
Family: STM32L0
Kind of package: in-tray
Kind of core: 32-bit
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STM32L010K4T6 STMicroelectronics stm32l010f4.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: in-tray
Kind of core: 32-bit
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STM32L010C6T6TR STMicroelectronics stm32l010c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: LQFP48
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 256B EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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STM32L010K4T6TR STMicroelectronics en.DM00440565.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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STM32L010K8T6TR STMicroelectronics en.DM00440569.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 256B EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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STM32L452VEI6 stm32l452cc.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; UFBGA100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: UFBGA100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
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STM32L452VET3 stm32l452cc.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
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ESDZV18-1BF4 ESDZV18-1BF4.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 140W; 6A; bidirectional; 0201
Type of diode: TVS
Version: ESD
Max. off-state voltage: 16V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 0.14kW
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ESDZV5-1BF4 dm00344091.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 70W; 7A; bidirectional; 0201
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5.5V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 70W
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ESDL031-1BF4 dm00648694.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 45W; 5÷6.6V; 7A; bidirectional; 0201
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5...6.6V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 45W
Capacitance: 12pF
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STL25N60M2-EP en.DM00150214.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: PowerFLAT 8x8
On-state resistance: 0.205Ω
Mounting: SMD
Pulsed drain current: 64A
Power dissipation: 125W
Gate charge: 29nC
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STP25N60M2-EP STP25N60M2-EP.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Polarisation: unipolar
Technology: MDmesh™ M2
Drain current: 11.3A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO220-3
On-state resistance: 188mΩ
Mounting: THT
Pulsed drain current: 72A
Power dissipation: 150W
Gate charge: 29nC
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STS1DNC45 sts1dnc45.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.25A; Idm: 1.6A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 1.6A
Polarisation: unipolar
Drain current: 0.25A
Kind of channel: enhancement
Drain-source voltage: 450V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: SO8
On-state resistance: 4.5Ω
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STB11N65M5 stb11n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
auf Bestellung 685 Stücke:
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STP11N65M2 en.DM00116928.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 12.5nC
auf Bestellung 90 Stücke:
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STP11N65M5 en.DM00049307.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
Produkt ist nicht verfügbar
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STL11N65M5 en.DM00116135.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 8.5A
Power dissipation: 70W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 34A
Gate charge: 17nC
Produkt ist nicht verfügbar
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M41T00SM6F m41t00s.pdf
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; I2C; SRAM; SO8; 2.7÷5.5V
Kind of memory: SRAM
Mounting: SMD
Type of integrated circuit: RTC circuit
DC supply current: 300µA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Time keeping current: 0.6µA
Case: SO8
Interface: I2C
Operating voltage: 2.7...5.5V
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STP5NK60Z en.CD00003042.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 34nC
auf Bestellung 122 Stücke:
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STD4NK60Z-1 std4nk60z-1.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 26nC
auf Bestellung 238 Stücke:
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STD2HNK60Z std2hnk60z.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1336 Stücke:
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STQ2HNK60ZR-AP en.CD00003701.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 500mA; Idm: 2A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.5A
Power dissipation: 3W
Case: TO92 Formed
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: 2A
Gate charge: 11nC
auf Bestellung 1777 Stücke:
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STB9NK60ZT4 STB9NK60Z.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STB4NK60Z-1 en.CD00003002.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70W; TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 70W
Case: TO262-3
Mounting: THT
Gate charge: 26nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STD2HNK60Z-1 en.CD00003701.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 4.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 11nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STM32MP131AAF3 stm32mp131a.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; 650MHz; -40÷125°C; Core: 32-bit
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: ARM microprocessor
Clock frequency: 650MHz
Kind of core: 32-bit
auf Bestellung 2080 Stücke:
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Mindestbestellmenge: 160 Stücke
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SCT1000N170 sct1000n170.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 7A
Power dissipation: 96W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Pulsed drain current: 20A
Kind of package: tube
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SCT30N120 SCT30N120.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of channel: enhancement
Pulsed drain current: 90A
Kind of package: tube
auf Bestellung 4 Stücke:
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SMCJ188A-TR cd00001367.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 209V; 26A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.2µA
Manufacturer series: SMCJ
Number of channels: 1
Capacitance: 0.15nF
auf Bestellung 22500 Stücke:
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Mindestbestellmenge: 2500 Stücke
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SMAJ170A-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189V; 6.5A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 3500 Stücke:
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SMAJ170CA-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189V; 6.5A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 16 Stücke:
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SM6T75CAY sm6t75cay.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 75V; 5.8A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 5.8A
Max. off-state voltage: 64.1V
Breakdown voltage: 75V
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Semiconductor structure: bidirectional
auf Bestellung 3 Stücke:
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IPS4260L ips4260l.pdf
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; low-side; 55V; 2A; HTSSOP20; Usup: 8÷50V
Number of channels: 1
On-state resistance: 0.26Ω
Mounting: SMD
Supply voltage: 8...50V
Output current: 2A
Type of integrated circuit: power switch
Output voltage: 55V
Case: HTSSOP20
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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STEVAL-IFP029V1 steval-ifp029v1.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: IPS4260L; 100kHz; 8÷36VDC
Type of development kit: evaluation
Components: IPS4260L
Associated circuits: STEVALPCC009V2
Connection: pin header; screw
Frequency: 0.1MHz
Operating voltage: 8...36V DC
Programmers and development kits features: low-side driver
Kit contents: expansion board
Produkt ist nicht verfügbar
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STPS2150AFN stps2150.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Max. forward impulse current: 70A
Kind of package: reel; tape
Max. load current: 30A
Leakage current: 1.5mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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LMV824AIDT lmv824a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
auf Bestellung 2409 Stücke:
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LMV824IPT lmv824.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
auf Bestellung 1853 Stücke:
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LMV822IDT lmv822.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; SO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV823AIST lmv823a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO10
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO10
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV822AIDT lmv822a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV822AIST lmv822a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV822AIYDT lmv822a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Application: automotive industry
Produkt ist nicht verfügbar
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LMV822AIYST lmv822a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Application: automotive industry
Produkt ist nicht verfügbar
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LMV822IQ2T lmv822.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; DFN8; 4mV
Case: DFN8
Mounting: SMT
Input offset voltage: 4mV
Slew rate: 1.9V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
Number of channels: 2
Bandwidth: 5.5MHz
auf Bestellung 900 Stücke:
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LMV822IST lmv822.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV822IYST lmv822.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO8
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Application: automotive industry
Produkt ist nicht verfügbar
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LMV823IST lmv823.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; 2.5÷5.5VDC; miniSO10
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 2
Mounting: SMT
Case: miniSO10
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Input bias current: 0.18µA
Slew rate: 1.9V/μs
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV824AIPT lmv824a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV824AIYDT lmv824a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Application: automotive industry
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
Produkt ist nicht verfügbar
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LMV824AIYPT lmv824a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 2mV
Application: automotive industry
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV824IDT lmv824.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Input offset voltage: 4mV
Slew rate: 1.7V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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LMV824IYDT lmv824.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; 2.5÷5.5VDC; SO14; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Number of channels: 4
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 4mV
Application: automotive industry
Slew rate: 1.9V/μs
Input bias current: 0.18µA
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Input offset current: 50nA
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MJD3055T4 mjd3055t4.pdf
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 5...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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STM32G474VET3TR stm32g474re.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 7
Kind of package: reel; tape
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Case: LQFP100
Family: STM32G4
Number of 32bit timers: 2
Mounting: SMD
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 86
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Clock frequency: 170MHz
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STM32G474VET6TR stm32g474ve.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of 12bit D/A converters: 7
Kind of package: reel; tape
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Case: LQFP100
Family: STM32G4
Number of 32bit timers: 2
Mounting: SMD
Supply voltage: 1.71...3.6V DC
Number of inputs/outputs: 86
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Clock frequency: 170MHz
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STW5NK100Z description stp5nk100z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 3.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 133 Stücke:
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STTH2002DI en.CD00110358.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 175A; TO220AC; tube; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 22ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 35A
Max. forward impulse current: 175A
Kind of package: tube
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SM6T12AY SM6TxxY.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 10.2V
Max. forward impulse current: 36A
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Breakdown voltage: 12V
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Semiconductor structure: unidirectional
auf Bestellung 4359 Stücke:
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STM8S903F3P6TR STM8S903F3-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM32L010R8T6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 256B EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 3
Family: STM32L0
Kind of package: in-tray
Kind of core: 32-bit
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STM32L010RBT6 stm32l010rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 512B EEPROM; 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 3
Family: STM32L0
Kind of package: in-tray
Kind of core: 32-bit
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STM32L010K4T6 stm32l010f4.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: in-tray
Kind of core: 32-bit
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STM32L010C6T6TR stm32l010c6.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP48; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: LQFP48
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 256B EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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STM32L010K4T6TR en.DM00440565.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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STM32L010K8T6TR en.DM00440569.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 256B EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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