Die Produkte vishay siliconix
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]
| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI2307BDS-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A SOT23-3 Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
auf Bestellung 3091 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5836 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SI2312BDS-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 3.9A SOT23-3 Vgs(th) (Max) @ Id: 850mV @ 250µA Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Part Status: Active FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V |
auf Bestellung 59263 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
SI2315BDS-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 12V 3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) |
auf Bestellung 22154 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1750 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SI2304BDS-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 2.6A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) |
auf Bestellung 35947 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
SI7615CDN-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V Power Dissipation (Max): 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7615 |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 19550 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
DG507BEW-T1-GE3 |
|
Vishay Siliconix |
Description: IC MUX ANA DUAL 16/8CH 28TSOIC Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3pF, 17pF Switch Time (Ton, Toff) (Max): 250ns, 200ns Channel-to-Channel Matching (ΔRon): 10Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -84dB @ 1MHz Charge Injection: 1pC Voltage - Supply, Dual (V±): ±5V ~ 20V Number of Circuits: 2 Voltage - Supply, Single (V+): 12V Supplier Device Package: 28-SOIC -3db Bandwidth: 217MHz On-State Resistance (Max): 300Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 587 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
IRFP460APBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 280W (Tc) Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 187 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI4134DY-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4134 |
auf Bestellung 673 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 82500 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SI7540ADP-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH POWERPAK8 Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V Current - Continuous Drain (Id) @ 25°C: 12A, 9A Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 3.5W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 251 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11084 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SI9978DW-E3 |
|
Vishay Siliconix |
Description: IC GATE DRVR HALF-BRIDGE 24SOIC Part Status: Obsolete Logic Voltage - VIL, VIH: 1V, 4V Gate Type: N-Channel MOSFET Input Type: Non-Inverting Voltage - Supply: 14.5V ~ 17.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Bulk Number of Drivers: 4 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 110ns, 50ns Supplier Device Package: 24-SOIC High Side Voltage - Max (Bootstrap): 40 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 750 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SUM90140E-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 200V 90A D2PAK Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Base Part Number: SUM90140 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
IRFR9214TRPBF |
|
Vishay Siliconix |
Description: MOSFET P-CH 250V 2.7A DPAK Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: IRFR9214 |
auf Bestellung 6264 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
SIUD401ED-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 500MA PPAK 0806 Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIUD401 Package / Case: PowerPAK® 0806 Supplier Device Package: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V Vgs (Max): ±12V |
auf Bestellung 3570 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SI4114DY-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V |
auf Bestellung 2194 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 67500 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SI1926DL-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.37A SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI1926 Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 510mW Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V |
auf Bestellung 96000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.37A SC-70-6 Base Part Number: SI1926 Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Power - Max: 510mW Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V |
auf Bestellung 99110 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
|
|
SI1922EDH-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.3A SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI1922 Supplier Device Package: SC-70-6 |
auf Bestellung 51000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 79422 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.3A SOT-363 Base Part Number: SI1922 Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 52974 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 79422 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SI1555DL-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V/8V SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 270mW Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA Drain to Source Voltage (Vdss): 20V, 8V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3120 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI1026X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SC89-6 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6 Base Part Number: SI1026 |
auf Bestellung 126000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 141236 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SC89-6 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6 Base Part Number: SI1026 |
auf Bestellung 127278 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 141236 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SI1023X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.37A SC89-6 Base Part Number: SI1023 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.37A SC89-6 Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6 Base Part Number: SI1023 |
auf Bestellung 5664 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI1539DL-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 30V SC70-6 FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 270mW Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
SI1913DH-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.88A SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 570mW Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Current - Continuous Drain (Id) @ 25°C: 880mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45000 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SI1035X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC-89 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel |
auf Bestellung 24000 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC-89 FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Drain to Source Voltage (Vdss): 20V |
auf Bestellung 26658 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC-89 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel |
auf Bestellung 26658 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI1016X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC89-6 Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V |
auf Bestellung 2711 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 65508 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC89-6 Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V |
auf Bestellung 2711 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 65508 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
|
|
SI1024X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.485A SC89-6 FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Base Part Number: SI1024 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 41798 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.485A SC89-6 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89 (SOT-563F) Base Part Number: SI1024 |
auf Bestellung 7055 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 41798 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SI3911DV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1.8A 6TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Obsolete Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 104767 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SI1029X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 60V SC89-6 Base Part Number: SI1029 Supplier Device Package: SC-89 (SOT-563F) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 73537 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 60V SC89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI1029 Supplier Device Package: SC-89-6 |
auf Bestellung 99896 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 73537 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
|
|
SI1965DH-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Manufacturer: Vishay Siliconix Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI1965 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Base Part Number: SI1965 Manufacturer: Vishay Siliconix Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 7918 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: 2 P-Channel (Dual) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate |
auf Bestellung 8906 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
 |
SIB912DK-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.5A SC-75-6 Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIB912 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A |
auf Bestellung 33000 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.5A SC-75-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIB912 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V |
auf Bestellung 33135 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI1902DL-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.66A SC-70-6 Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 270mW Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI5935CDC-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4A 1206-8 Base Part Number: SI5935 Supplier Device Package: 1206-8 ChipFET™ Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A |
auf Bestellung 11820 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4A 1206-8 Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI5935 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V |
auf Bestellung 11820 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI1912EDH-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.13A SC70-6 FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 570mW Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 100µA (Min) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.13A Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12608 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI3552DV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 30V 6TSOP Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Base Part Number: SI3552 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8968 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 30V 6TSOP Packaging: Cut Tape (CT) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Base Part Number: SI3552 |
auf Bestellung 3694 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8968 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SI3585DV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2A 6-TSOP Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33648 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SI1563EDH-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V 1.13A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 570mW Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 111518 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SIA519EDJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4.5A SC70-6 Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIA519 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35085 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4.5A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Base Part Number: SIA519 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 1030 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 35085 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
|
|
SI5513CDC-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12034 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
auf Bestellung 300 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12034 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
|
|
SIA906EDJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC70-6 Base Part Number: SIA906 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 2953 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC70-6 Base Part Number: SIA906 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 2953 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC70-6 Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: PowerPAK® SC-70-6 Dual Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 20968 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
 |
SIB914DK-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6 FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® SC-75-6L Dual Package / Case: PowerPAK® SC-75-6L Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A Drain to Source Voltage (Vdss): 8V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SI1988DH-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.3A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 20V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SI1958DH-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.3A SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 205mOhm @ 1.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33358 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI5999EDU-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6A POWERPAK Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 10.4W FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6A POWERPAK Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 10.4W Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA |
auf Bestellung 5474 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6A POWERPAK Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 10.4W Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
auf Bestellung 5474 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI1972DH-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 30V 1.3A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 225mOhm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Dual) Package / Case: 6-TSSOP, SC-88, SOT-363 Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11308 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SIA950DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 190V 0.95A SC-70-6 FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7W Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 950mA Drain to Source Voltage (Vdss): 190V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SIA910EDJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 12V 4.5A SC-70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SI1905DL-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 8V 0.57A SC70-6 Rds On (Max) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 570mA Drain to Source Voltage (Vdss): 8V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 270mW Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23018 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SI4936CDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 5.8A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 2.3W Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SI9933CDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4A 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA FET Feature: Logic Level Gate Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 3.1W FET Type: 2 P-Channel (Dual) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 56522 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SIA975DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.5A SC-70-6 Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 12V FET Type: 2 P-Channel (Dual) Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14243 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.5A SC-70-6 Package / Case: PowerPAK® SC-70-6 Dual Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 12V FET Type: 2 P-Channel (Dual) Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 19 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14243 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SIB911DK-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.6A SC75-6 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-75-6L Dual Supplier Device Package: PowerPAK® SC-75-6L Dual Base Part Number: SIB911 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 652 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI6954ADQ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-TSSOP Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90592 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 422 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 90592 Stücke - Preis und Lieferfrist anzeigen
|
|
| SI2307BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
auf Bestellung 3091 Stücke Description: MOSFET P-CH 30V 2.5A SOT23-3
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5836 Stücke - Preis und Lieferfrist anzeigen
| SI2312BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
auf Bestellung 59263 Stücke Description: MOSFET N-CH 20V 3.9A SOT23-3
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Lieferzeit 21-28 Tag (e)
| SI2315BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
auf Bestellung 22154 Stücke Description: MOSFET P-CH 12V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1750 Stücke - Preis und Lieferfrist anzeigen
| SI2304BDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
auf Bestellung 35947 Stücke Description: MOSFET N-CH 30V 2.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Lieferzeit 21-28 Tag (e)
| SI7615CDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
auf Bestellung 9000 Stücke Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
Lieferzeit 21-28 Tag (e)
auf Bestellung 19550 Stücke - Preis und Lieferfrist anzeigen
| DG507BEW-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 16/8CH 28TSOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -84dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Number of Circuits: 2
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
-3db Bandwidth: 217MHz
On-State Resistance (Max): 300Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX ANA DUAL 16/8CH 28TSOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -84dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Number of Circuits: 2
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
-3db Bandwidth: 217MHz
On-State Resistance (Max): 300Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 587 Stücke - Preis und Lieferfrist anzeigen
| IRFP460APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 187 Stücke - Preis und Lieferfrist anzeigen
| SI4134DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4134
auf Bestellung 673 Stücke Description: MOSFET N-CH 30V 14A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4134
Lieferzeit 21-28 Tag (e)
auf Bestellung 82500 Stücke - Preis und Lieferfrist anzeigen
| SI7540ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH POWERPAK8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 251 Stücke Description: MOSFET N/P-CH POWERPAK8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 11084 Stücke - Preis und Lieferfrist anzeigen
| SI9978DW-E3 |
|
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 24SOIC
Part Status: Obsolete
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Input Type: Non-Inverting
Voltage - Supply: 14.5V ~ 17.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Number of Drivers: 4
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 24-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE DRVR HALF-BRIDGE 24SOIC
Part Status: Obsolete
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Input Type: Non-Inverting
Voltage - Supply: 14.5V ~ 17.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Number of Drivers: 4
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 24-SOIC
High Side Voltage - Max (Bootstrap): 40 V
auf Bestellung 750 Stücke - Preis und Lieferfrist anzeigen
| SUM90140E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUM90140
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUM90140
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| IRFR9214TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRFR9214
auf Bestellung 6264 Stücke Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRFR9214
Lieferzeit 21-28 Tag (e)
| SIUD401ED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 500MA PPAK 0806
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIUD401
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V
Vgs (Max): ±12V
auf Bestellung 3570 Stücke Description: MOSFET P-CH 30V 500MA PPAK 0806
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIUD401
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V
Vgs (Max): ±12V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI4114DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
auf Bestellung 2194 Stücke Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 67500 Stücke - Preis und Lieferfrist anzeigen
|
| SI1926DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
auf Bestellung 96000 Stücke Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 132110 Stücke - Preis und Lieferfrist anzeigen
| SI1926DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
auf Bestellung 99110 Stücke Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 129000 Stücke - Preis und Lieferfrist anzeigen
| SI1922EDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1922
Supplier Device Package: SC-70-6
auf Bestellung 51000 Stücke Description: MOSFET 2N-CH 20V 1.3A SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1922
Supplier Device Package: SC-70-6
Lieferzeit 21-28 Tag (e)
auf Bestellung 132396 Stücke - Preis und Lieferfrist anzeigen
| SI1922EDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
Base Part Number: SI1922
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 52974 Stücke Description: MOSFET 2N-CH 20V 1.3A SOT-363
Base Part Number: SI1922
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 130422 Stücke - Preis und Lieferfrist anzeigen
| SI1555DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V/8V SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V/8V SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 3120 Stücke - Preis und Lieferfrist anzeigen
| SI1026X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
auf Bestellung 126000 Stücke Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
Lieferzeit 21-28 Tag (e)
auf Bestellung 268514 Stücke - Preis und Lieferfrist anzeigen
| SI1026X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
auf Bestellung 127278 Stücke Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
Lieferzeit 21-28 Tag (e)
auf Bestellung 267236 Stücke - Preis und Lieferfrist anzeigen
| SI1023X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Base Part Number: SI1023
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
auf Bestellung 3000 Stücke Description: MOSFET 2P-CH 20V 0.37A SC89-6
Base Part Number: SI1023
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Lieferzeit 21-28 Tag (e)
auf Bestellung 5664 Stücke - Preis und Lieferfrist anzeigen
| SI1023X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1023
auf Bestellung 5664 Stücke Description: MOSFET 2P-CH 20V 0.37A SC89-6
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1023
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI1539DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SC70-6
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V SC70-6
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
| SI1913DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 0.88A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 45000 Stücke - Preis und Lieferfrist anzeigen
| SI1035X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
auf Bestellung 24000 Stücke Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 53316 Stücke - Preis und Lieferfrist anzeigen
| SI1035X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC-89
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
auf Bestellung 26658 Stücke Description: MOSFET N/P-CH 20V SC-89
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 50658 Stücke - Preis und Lieferfrist anzeigen
| SI1035X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
auf Bestellung 26658 Stücke Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 50658 Stücke - Preis und Lieferfrist anzeigen
| SI1016X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
auf Bestellung 2711 Stücke Description: MOSFET N/P-CH 20V SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 68219 Stücke - Preis und Lieferfrist anzeigen
| SI1016X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89-6
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
auf Bestellung 2711 Stücke Description: MOSFET N/P-CH 20V SC89-6
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 68219 Stücke - Preis und Lieferfrist anzeigen
| SI1024X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
auf Bestellung 6000 Stücke Description: MOSFET 2N-CH 20V 0.485A SC89-6
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
Lieferzeit 21-28 Tag (e)
auf Bestellung 48853 Stücke - Preis und Lieferfrist anzeigen
| SI1024X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
auf Bestellung 7055 Stücke Description: MOSFET 2N-CH 20V 0.485A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
Lieferzeit 21-28 Tag (e)
auf Bestellung 47798 Stücke - Preis und Lieferfrist anzeigen
| SI3911DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 104767 Stücke - Preis und Lieferfrist anzeigen
| SI1029X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SC89-6
Base Part Number: SI1029
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 60V SC89-6
Base Part Number: SI1029
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 173433 Stücke - Preis und Lieferfrist anzeigen
| SI1029X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1029
Supplier Device Package: SC-89-6
auf Bestellung 99896 Stücke Description: MOSFET N/P-CH 60V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1029
Supplier Device Package: SC-89-6
Lieferzeit 21-28 Tag (e)
auf Bestellung 73537 Stücke - Preis und Lieferfrist anzeigen
| SI1965DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1965
auf Bestellung 6000 Stücke Description: MOSFET 2P-CH 12V 1.3A SC70-6
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1965
Lieferzeit 21-28 Tag (e)
auf Bestellung 16824 Stücke - Preis und Lieferfrist anzeigen
| SI1965DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Base Part Number: SI1965
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 7918 Stücke Description: MOSFET 2P-CH 12V 1.3A SC70-6
Base Part Number: SI1965
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 14906 Stücke - Preis und Lieferfrist anzeigen
| SI1965DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
auf Bestellung 8906 Stücke Description: MOSFET 2P-CH 12V 1.3A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
Lieferzeit 21-28 Tag (e)
auf Bestellung 13918 Stücke - Preis und Lieferfrist anzeigen
| SIB912DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
auf Bestellung 33000 Stücke Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Lieferzeit 21-28 Tag (e)
auf Bestellung 33135 Stücke - Preis und Lieferfrist anzeigen
| SIB912DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
auf Bestellung 33135 Stücke Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI1902DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC-70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 0.66A SC-70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI5935CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
auf Bestellung 11820 Stücke Description: MOSFET 2P-CH 20V 4A 1206-8
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Lieferzeit 21-28 Tag (e)
auf Bestellung 11820 Stücke - Preis und Lieferfrist anzeigen
| SI5935CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
auf Bestellung 11820 Stücke Description: MOSFET 2P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 11820 Stücke - Preis und Lieferfrist anzeigen
| SI1912EDH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.13A SC70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 1.13A SC70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A
Drain to Source Voltage (Vdss): 20V
auf Bestellung 12608 Stücke - Preis und Lieferfrist anzeigen
| SI3552DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
auf Bestellung 3000 Stücke Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
Lieferzeit 21-28 Tag (e)
auf Bestellung 12662 Stücke - Preis und Lieferfrist anzeigen
| SI3552DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
auf Bestellung 3694 Stücke Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
Lieferzeit 21-28 Tag (e)
auf Bestellung 11968 Stücke - Preis und Lieferfrist anzeigen
| SI3585DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 2A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
auf Bestellung 33648 Stücke - Preis und Lieferfrist anzeigen
| SI1563EDH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 1.13A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 111518 Stücke - Preis und Lieferfrist anzeigen
| SIA519EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIA519
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIA519
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
auf Bestellung 36115 Stücke - Preis und Lieferfrist anzeigen
| SIA519EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Base Part Number: SIA519
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1030 Stücke Description: MOSFET N/P-CH 20V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Base Part Number: SIA519
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 35085 Stücke - Preis und Lieferfrist anzeigen
| SI5513CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 12334 Stücke - Preis und Lieferfrist anzeigen
| SI5513CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 300 Stücke Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 12034 Stücke - Preis und Lieferfrist anzeigen
|
| SIA906EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2953 Stücke Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 23921 Stücke - Preis und Lieferfrist anzeigen
| SIA906EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2953 Stücke Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 23921 Stücke - Preis und Lieferfrist anzeigen
| SIA906EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 20968 Stücke Description: MOSFET 2N-CH 20V 4.5A SC70-6
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5906 Stücke - Preis und Lieferfrist anzeigen
| SIB914DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 8V
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SI1988DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: 2 N-Channel (Dual)
| SI1958DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 205mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 1.3A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 205mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 33358 Stücke - Preis und Lieferfrist anzeigen
| SI5999EDU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
auf Bestellung 3000 Stücke Description: MOSFET 2P-CH 20V 6A POWERPAK
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 10948 Stücke - Preis und Lieferfrist anzeigen
| SI5999EDU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 5474 Stücke Description: MOSFET 2P-CH 20V 6A POWERPAK
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 8474 Stücke - Preis und Lieferfrist anzeigen
| SI5999EDU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 5474 Stücke Description: MOSFET 2P-CH 20V 6A POWERPAK
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8474 Stücke - Preis und Lieferfrist anzeigen
| SI1972DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 11308 Stücke - Preis und Lieferfrist anzeigen
| SIA950DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 190V 0.95A SC-70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA
Drain to Source Voltage (Vdss): 190V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 190V 0.95A SC-70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA
Drain to Source Voltage (Vdss): 190V
| SIA910EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 12V 4.5A SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
| SI1905DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Rds On (Max) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 8V 0.57A SC70-6
Rds On (Max) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
auf Bestellung 23018 Stücke - Preis und Lieferfrist anzeigen
| SI4936CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.3W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.3W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| SI9933CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 4A 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 56522 Stücke - Preis und Lieferfrist anzeigen
| SIA975DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 4.5A SC-70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 14262 Stücke - Preis und Lieferfrist anzeigen
| SIA975DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 19 Stücke Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 14243 Stücke - Preis und Lieferfrist anzeigen
|
| SIB911DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB911
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 2.6A SC75-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB911
auf Bestellung 652 Stücke - Preis und Lieferfrist anzeigen
| SI6954ADQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 91014 Stücke - Preis und Lieferfrist anzeigen
| SI6954ADQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 422 Stücke Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 90592 Stücke - Preis und Lieferfrist anzeigen
|
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]