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SI2307BDS-T1-E3 SI2307BDS-T1-E3 72699.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.5A SOT23-3
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
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Lieferzeit 21-28 Tag (e)
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SI2312BDS-T1-E3 SI2312BDS-T1-E3 si2312bds.pdf Vishay Siliconix Description: MOSFET N-CH 20V 3.9A SOT23-3
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
auf Bestellung 59263 Stücke
Lieferzeit 21-28 Tag (e)
SI2315BDS-T1-E3 SI2315BDS-T1-E3 72014.pdf Vishay Siliconix Description: MOSFET P-CH 12V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
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Lieferzeit 21-28 Tag (e)
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SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 si2304bds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
auf Bestellung 35947 Stücke
Lieferzeit 21-28 Tag (e)
SI7615CDN-T1-GE3 SI7615CDN-T1-GE3 si7615cdn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
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DG507BEW-T1-GE3 DG507BEW-T1-GE3 dg506b.pdf Vishay Siliconix Description: IC MUX ANA DUAL 16/8CH 28TSOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -84dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Number of Circuits: 2
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
-3db Bandwidth: 217MHz
On-State Resistance (Max): 300Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFP460APBF IRFP460APBF sihfp460.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4134DY-T1-E3 SI4134DY-T1-E3 si4134dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 14A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4134
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Lieferzeit 21-28 Tag (e)
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SI7540ADP-T1-GE3 SI7540ADP-T1-GE3 si7540adp.pdf Vishay Siliconix Description: MOSFET N/P-CH POWERPAK8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 251 Stücke
Lieferzeit 21-28 Tag (e)
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SI9978DW-E3 SI9978DW-E3 si9978.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 24SOIC
Part Status: Obsolete
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Input Type: Non-Inverting
Voltage - Supply: 14.5V ~ 17.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Number of Drivers: 4
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 24-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUM90140E-GE3 SUM90140E-GE3 sum90140e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUM90140
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9214TRPBF IRFR9214TRPBF sihfr921.pdf Vishay Siliconix Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRFR9214
auf Bestellung 6264 Stücke
Lieferzeit 21-28 Tag (e)
SIUD401ED-T1-GE3 SIUD401ED-T1-GE3 siud401ed.pdf Vishay Siliconix Description: MOSFET P-CH 30V 500MA PPAK 0806
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIUD401
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V
Vgs (Max): ±12V
auf Bestellung 3570 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4114DY-T1-E3 SI4114DY-T1-E3 si4114dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
auf Bestellung 2194 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67500 Stücke - Preis und Lieferfrist anzeigen
6+ 4.39 EUR
10+ 3.96 EUR
100+ 3.18 EUR
500+ 2.62 EUR
1000+ 2.24 EUR
SI1926DL-T1-E3 SI1926DL-T1-E3 si1926dl.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
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Vishay Siliconix Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
auf Bestellung 99110 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 si1922ed.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.3A SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1922
Supplier Device Package: SC-70-6
auf Bestellung 51000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 79422 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2N-CH 20V 1.3A SOT-363
Base Part Number: SI1922
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 52974 Stücke
Lieferzeit 21-28 Tag (e)
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SI1555DL-T1-E3 SI1555DL-T1-E3 71079.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V/8V SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3120 Stücke - Preis und Lieferfrist anzeigen
SI1026X-T1-GE3 SI1026X-T1-GE3 si1026x.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
auf Bestellung 126000 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
auf Bestellung 127278 Stücke
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SI1023X-T1-GE3 SI1023X-T1-GE3 71169.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 0.37A SC89-6
Base Part Number: SI1023
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 20V 0.37A SC89-6
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1023
auf Bestellung 5664 Stücke
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SI1539DL-T1-E3 SI1539DL-T1-E3 si1539dl.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V SC70-6
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1913DH-T1-E3 SI1913DH-T1-E3 71965.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 0.88A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1035X-T1-GE3 SI1035X-T1-GE3 71426.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
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Vishay Siliconix Description: MOSFET N/P-CH 20V SC-89
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
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Vishay Siliconix Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
auf Bestellung 26658 Stücke
Lieferzeit 21-28 Tag (e)
SI1016X-T1-GE3 SI1016X-T1-GE3 si1016x.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
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Vishay Siliconix Description: MOSFET N/P-CH 20V SC89-6
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
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SI1024X-T1-GE3 SI1024X-T1-GE3 71170.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 0.485A SC89-6
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
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Vishay Siliconix Description: MOSFET 2N-CH 20V 0.485A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
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SI3911DV-T1-E3 SI3911DV-T1-E3 71380.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1029X-T1-GE3 SI1029X-T1-GE3 71435.pdf Vishay Siliconix Description: MOSFET N/P-CH 60V SC89-6
Base Part Number: SI1029
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N/P-CH 60V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1029
Supplier Device Package: SC-89-6
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SI1965DH-T1-GE3 SI1965DH-T1-GE3 si1965dh.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 1.3A SC70-6
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1965
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 12V 1.3A SC70-6
Base Part Number: SI1965
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 12V 1.3A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
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SIB912DK-T1-GE3 SIB912DK-T1-GE3 sib912dk.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
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Vishay Siliconix Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
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Lieferzeit 21-28 Tag (e)
SI1902DL-T1-GE3 SI1902DL-T1-GE3 si1902dl.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 0.66A SC-70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 si5935cd.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4A 1206-8
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
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Vishay Siliconix Description: MOSFET 2P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
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SI1912EDH-T1-E3 SI1912EDH-T1-E3 71408.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.13A SC70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3552DV-T1-E3 SI3552DV-T1-E3 si3552dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
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Vishay Siliconix Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
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Lieferzeit 21-28 Tag (e)
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SI3585DV-T1-E3 SI3585DV-T1-E3 71184711.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 2A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1563EDH-T1-E3 SI1563EDH-T1-E3 si1563edh.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 1.13A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 sia519edj.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIA519
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N/P-CH 20V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Base Part Number: SIA519
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1030 Stücke
Lieferzeit 21-28 Tag (e)
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SI5513CDC-T1-GE3 SI5513CDC-T1-GE3 si5513cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12034 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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Lieferzeit 21-28 Tag (e)
auf Bestellung 12034 Stücke - Preis und Lieferfrist anzeigen
17+ 1.53 EUR
20+ 1.32 EUR
100+ 0.98 EUR
SIA906EDJ-T1-GE3 SIA906EDJ-T1-GE3 sia906ed.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2953 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2953 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 20968 Stücke
Lieferzeit 21-28 Tag (e)
SIB914DK-T1-GE3 SIB914DK-T1-GE3 sib914dk.pdf Vishay Siliconix Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1988DH-T1-E3 SI1988DH-T1-E3 SI1988DH.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1958DH-T1-E3 SI1958DH-T1-E3 SI1958DH.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.3A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 205mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 si5999ed.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 6A POWERPAK
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 20V 6A POWERPAK
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 20V 6A POWERPAK
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 5474 Stücke
Lieferzeit 21-28 Tag (e)
SI1972DH-T1-E3 SI1972DH-T1-E3 si1972dh.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA950DJ-T1-GE3 SIA950DJ-T1-GE3 sia950dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 190V 0.95A SC-70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA
Drain to Source Voltage (Vdss): 190V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3 sia910edj.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 4.5A SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1905DL-T1-E3 SI1905DL-T1-E3 si1905dl.pdf Vishay Siliconix Description: MOSFET 2P-CH 8V 0.57A SC70-6
Rds On (Max) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 si4936cdy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.3W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9933CDY-T1-GE3 SI9933CDY-T1-GE3 si9933cdy.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4A 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 sia975dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14243 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14243 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.41 EUR
SIB911DK-T1-GE3 SIB911DK-T1-GE3 sib911dk.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.6A SC75-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB911
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6954ADQ-T1-E3 SI6954ADQ-T1-E3 71130.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 422 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90592 Stücke - Preis und Lieferfrist anzeigen
11+ 2.39 EUR
13+ 2.12 EUR
100+ 1.62 EUR
SI2307BDS-T1-E3 72699.pdf
SI2307BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
auf Bestellung 3091 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5836 Stücke - Preis und Lieferfrist anzeigen
SI2312BDS-T1-E3 si2312bds.pdf
SI2312BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
auf Bestellung 59263 Stücke
Lieferzeit 21-28 Tag (e)
SI2315BDS-T1-E3 72014.pdf
SI2315BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
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Lieferzeit 21-28 Tag (e)
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SI2304BDS-T1-GE3 si2304bds.pdf
SI2304BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
auf Bestellung 35947 Stücke
Lieferzeit 21-28 Tag (e)
SI7615CDN-T1-GE3 si7615cdn.pdf
SI7615CDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
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Lieferzeit 21-28 Tag (e)
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DG507BEW-T1-GE3 dg506b.pdf
DG507BEW-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 16/8CH 28TSOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -84dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Number of Circuits: 2
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
-3db Bandwidth: 217MHz
On-State Resistance (Max): 300Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFP460APBF sihfp460.pdf
IRFP460APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4134DY-T1-E3 si4134dy.pdf
SI4134DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4134
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SI7540ADP-T1-GE3 si7540adp.pdf
SI7540ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH POWERPAK8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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SI9978DW-E3 si9978.pdf
SI9978DW-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 24SOIC
Part Status: Obsolete
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Input Type: Non-Inverting
Voltage - Supply: 14.5V ~ 17.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Number of Drivers: 4
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 24-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUM90140E-GE3 sum90140e.pdf
SUM90140E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUM90140
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9214TRPBF sihfr921.pdf
IRFR9214TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRFR9214
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Lieferzeit 21-28 Tag (e)
SIUD401ED-T1-GE3 siud401ed.pdf
SIUD401ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 500MA PPAK 0806
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIUD401
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V
Vgs (Max): ±12V
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SI4114DY-T1-E3 si4114dy.pdf
SI4114DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
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6+ 4.39 EUR
10+ 3.96 EUR
100+ 3.18 EUR
500+ 2.62 EUR
1000+ 2.24 EUR
SI1926DL-T1-E3 si1926dl.pdf
SI1926DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
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SI1926DL-T1-E3 si1926dl.pdf
SI1926DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC-70-6
Base Part Number: SI1926
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
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SI1922EDH-T1-GE3 si1922ed.pdf
SI1922EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1922
Supplier Device Package: SC-70-6
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SI1922EDH-T1-GE3 si1922ed.pdf
SI1922EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
Base Part Number: SI1922
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI1555DL-T1-E3 71079.pdf
SI1555DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V/8V SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1026X-T1-GE3 si1026x.pdf
SI1026X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
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SI1026X-T1-GE3 si1026x.pdf
SI1026X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1026
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SI1023X-T1-GE3 71169.pdf
SI1023X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Base Part Number: SI1023
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI1023X-T1-GE3 71169.pdf
SI1023X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Base Part Number: SI1023
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SI1539DL-T1-E3 si1539dl.pdf
SI1539DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SC70-6
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1913DH-T1-E3 71965.pdf
SI1913DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1035X-T1-GE3 71426.pdf
SI1035X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
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SI1035X-T1-GE3 71426.pdf
SI1035X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC-89
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
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SI1035X-T1-GE3 71426.pdf
SI1035X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC-89
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
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SI1016X-T1-GE3 si1016x.pdf
SI1016X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
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SI1016X-T1-GE3 si1016x.pdf
SI1016X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89-6
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
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SI1024X-T1-GE3 71170.pdf
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
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SI1024X-T1-GE3 71170.pdf
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
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SI3911DV-T1-E3 71380.pdf
SI3911DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1029X-T1-GE3 71435.pdf
SI1029X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SC89-6
Base Part Number: SI1029
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1029X-T1-GE3 71435.pdf
SI1029X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1029
Supplier Device Package: SC-89-6
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SI1965DH-T1-GE3 si1965dh.pdf
SI1965DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1965
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SI1965DH-T1-GE3 si1965dh.pdf
SI1965DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Base Part Number: SI1965
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
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SI1965DH-T1-GE3 si1965dh.pdf
SI1965DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
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SIB912DK-T1-GE3 sib912dk.pdf
SIB912DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
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SIB912DK-T1-GE3 sib912dk.pdf
SIB912DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIB912
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
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SI1902DL-T1-GE3 si1902dl.pdf
SI1902DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC-70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5935CDC-T1-GE3 si5935cd.pdf
SI5935CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
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SI5935CDC-T1-GE3 si5935cd.pdf
SI5935CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
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SI1912EDH-T1-E3 71408.pdf
SI1912EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.13A SC70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3552DV-T1-E3 si3552dv.pdf
SI3552DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
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Lieferzeit 21-28 Tag (e)
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SI3552DV-T1-E3 si3552dv.pdf
SI3552DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3552
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SI3585DV-T1-E3 71184711.pdf
SI3585DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1563EDH-T1-E3 si1563edh.pdf
SI1563EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA519EDJ-T1-GE3 sia519edj.pdf
SIA519EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIA519
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA519EDJ-T1-GE3 sia519edj.pdf
SIA519EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Base Part Number: SIA519
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1030 Stücke
Lieferzeit 21-28 Tag (e)
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SI5513CDC-T1-GE3 si5513cd.pdf
SI5513CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12334 Stücke - Preis und Lieferfrist anzeigen
SI5513CDC-T1-GE3 si5513cd.pdf
SI5513CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12034 Stücke - Preis und Lieferfrist anzeigen
17+ 1.53 EUR
20+ 1.32 EUR
100+ 0.98 EUR
SIA906EDJ-T1-GE3 sia906ed.pdf
SIA906EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2953 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23921 Stücke - Preis und Lieferfrist anzeigen
SIA906EDJ-T1-GE3 sia906ed.pdf
SIA906EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Base Part Number: SIA906
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2953 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23921 Stücke - Preis und Lieferfrist anzeigen
SIA906EDJ-T1-GE3 sia906ed.pdf
SIA906EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 20968 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5906 Stücke - Preis und Lieferfrist anzeigen
SIB914DK-T1-GE3 sib914dk.pdf
SIB914DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SI1988DH-T1-E3 SI1988DH.pdf
SI1988DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1958DH-T1-E3 SI1958DH.pdf
SI1958DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 205mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33358 Stücke - Preis und Lieferfrist anzeigen
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10948 Stücke - Preis und Lieferfrist anzeigen
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 5474 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8474 Stücke - Preis und Lieferfrist anzeigen
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 5474 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8474 Stücke - Preis und Lieferfrist anzeigen
SI1972DH-T1-E3 si1972dh.pdf
SI1972DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11308 Stücke - Preis und Lieferfrist anzeigen
SIA950DJ-T1-GE3 sia950dj.pdf
SIA950DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 190V 0.95A SC-70-6
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA
Drain to Source Voltage (Vdss): 190V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA910EDJ-T1-GE3 sia910edj.pdf
SIA910EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1905DL-T1-E3 si1905dl.pdf
SI1905DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Rds On (Max) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23018 Stücke - Preis und Lieferfrist anzeigen
SI4936CDY-T1-GE3 si4936cdy.pdf
SI4936CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.3W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9933CDY-T1-GE3 si9933cdy.pdf
SI9933CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 56522 Stücke - Preis und Lieferfrist anzeigen
SIA975DJ-T1-GE3 sia975dj.pdf
SIA975DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14262 Stücke - Preis und Lieferfrist anzeigen
SIA975DJ-T1-GE3 sia975dj.pdf
SIA975DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14243 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.41 EUR
SIB911DK-T1-GE3 sib911dk.pdf
SIB911DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB911
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 652 Stücke - Preis und Lieferfrist anzeigen
SI6954ADQ-T1-E3 71130.pdf
SI6954ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 91014 Stücke - Preis und Lieferfrist anzeigen
SI6954ADQ-T1-E3 71130.pdf
SI6954ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 422 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90592 Stücke - Preis und Lieferfrist anzeigen
11+ 2.39 EUR
13+ 2.12 EUR
100+ 1.62 EUR
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