Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10949) > Seite 76 nach 183
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI6404DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 8.6A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6413DQ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 7.2A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6413DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 7.2A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6443DQ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 30V 7.3A 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6465DQ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 8V 8.8A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6465DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 8.8A 8TSSOP |
Produkt ist nicht verfügbar |
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Si6466ADQ-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 6.8A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6466ADQ-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 6.8A 8TSSOP |
Produkt ist nicht verfügbar |
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Si6469DQ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 8V 8TSSOP |
Produkt ist nicht verfügbar |
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SI6469DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 8TSSOP |
Produkt ist nicht verfügbar |
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Si6473DQ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 6.2A 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6473DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 6.2A 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6933DQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6933DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6943BDQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 2.3A 8TSSOP |
Produkt ist nicht verfügbar |
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Si6955ADQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 2.5A 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6955ADQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 2.5A 8-TSSOP |
Produkt ist nicht verfügbar |
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SI6966DQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 4A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6966DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 4A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6966EDQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 8TSSOP |
Produkt ist nicht verfügbar |
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SI6966EDQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 8TSSOP |
Produkt ist nicht verfügbar |
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Si6967DQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 8TSSOP |
Produkt ist nicht verfügbar |
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SI6967DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 8TSSOP |
Produkt ist nicht verfügbar |
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SI6969BDQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 4A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6969DQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 8TSSOP |
Produkt ist nicht verfügbar |
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SI6969DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 8TSSOP |
Produkt ist nicht verfügbar |
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Si6973DQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.1A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6973DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.1A 8TSSOP |
Produkt ist nicht verfügbar |
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Si6975DQ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 4.3A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6975DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 4.3A 8TSSOP |
Produkt ist nicht verfügbar |
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SI6983DQ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.6A 8TSSOP |
Produkt ist nicht verfügbar |
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SI7100DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 8V 35A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7102DN-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 12V 35A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7104DN-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 12V 35A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7104DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 35A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7114ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7115DN-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 8.9A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7129DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7136DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 30A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7137DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7138DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 30A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7149DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 50A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7156DP-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7156DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7159DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 30A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5170 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI7160DP-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 20A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7186DP-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 80V 32A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7196DP-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 16A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 5W (Ta), 41.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1577 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI7214DN-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 4.6A 1212-8 |
Produkt ist nicht verfügbar |
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SI7218DN-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 24A 1212-8 |
Produkt ist nicht verfügbar |
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SI7218DN-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 24A 1212-8 |
Produkt ist nicht verfügbar |
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SI7224DN-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 6A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7228DN-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 26A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7230DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 9A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7236DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 60A PWRPAK 8-SO |
Produkt ist nicht verfügbar |
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SI7302DN-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 220V 8.4A 1212-8 |
Produkt ist nicht verfügbar |
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SI7302DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 220V 8.4A 1212-8 |
Produkt ist nicht verfügbar |
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SI7328DN-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 35A PPAK 1212-8 |
Produkt ist nicht verfügbar |
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SI7336ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 5.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7342DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 9A PPAK SO-8 |
Produkt ist nicht verfügbar |
SI6404DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.6A 8TSSOP
Description: MOSFET N-CH 30V 8.6A 8TSSOP
Produkt ist nicht verfügbar
SI6413DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.2A 8TSSOP
Description: MOSFET P-CH 20V 7.2A 8TSSOP
Produkt ist nicht verfügbar
SI6413DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.2A 8TSSOP
Description: MOSFET P-CH 20V 7.2A 8TSSOP
Produkt ist nicht verfügbar
SI6443DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.3A 8-TSSOP
Description: MOSFET P-CH 30V 7.3A 8-TSSOP
Produkt ist nicht verfügbar
SI6465DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Produkt ist nicht verfügbar
SI6465DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Produkt ist nicht verfügbar
Si6466ADQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.8A 8TSSOP
Description: MOSFET N-CH 20V 6.8A 8TSSOP
Produkt ist nicht verfügbar
SI6466ADQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.8A 8TSSOP
Description: MOSFET N-CH 20V 6.8A 8TSSOP
Produkt ist nicht verfügbar
Si6469DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8TSSOP
Description: MOSFET P-CH 8V 8TSSOP
Produkt ist nicht verfügbar
SI6469DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8TSSOP
Description: MOSFET P-CH 8V 8TSSOP
Produkt ist nicht verfügbar
Si6473DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6473DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6933DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8-TSSOP
Description: MOSFET 2P-CH 30V 8-TSSOP
Produkt ist nicht verfügbar
SI6933DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8-TSSOP
Description: MOSFET 2P-CH 30V 8-TSSOP
Produkt ist nicht verfügbar
SI6943BDQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 2.3A 8TSSOP
Description: MOSFET 2P-CH 12V 2.3A 8TSSOP
Produkt ist nicht verfügbar
Si6955ADQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.5A 8-TSSOP
Description: MOSFET 2P-CH 30V 2.5A 8-TSSOP
Produkt ist nicht verfügbar
SI6955ADQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.5A 8-TSSOP
Description: MOSFET 2P-CH 30V 2.5A 8-TSSOP
Produkt ist nicht verfügbar
SI6966DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4A 8TSSOP
Description: MOSFET 2N-CH 20V 4A 8TSSOP
Produkt ist nicht verfügbar
SI6966DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4A 8TSSOP
Description: MOSFET 2N-CH 20V 4A 8TSSOP
Produkt ist nicht verfügbar
SI6966EDQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8TSSOP
Description: MOSFET 2N-CH 20V 8TSSOP
Produkt ist nicht verfügbar
SI6966EDQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8TSSOP
Description: MOSFET 2N-CH 20V 8TSSOP
Produkt ist nicht verfügbar
Si6967DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8TSSOP
Description: MOSFET 2P-CH 8V 8TSSOP
Produkt ist nicht verfügbar
SI6967DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8TSSOP
Description: MOSFET 2P-CH 8V 8TSSOP
Produkt ist nicht verfügbar
SI6969BDQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4A 8TSSOP
Description: MOSFET 2P-CH 12V 4A 8TSSOP
Produkt ist nicht verfügbar
SI6969DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8TSSOP
Description: MOSFET 2P-CH 12V 8TSSOP
Produkt ist nicht verfügbar
SI6969DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8TSSOP
Description: MOSFET 2P-CH 12V 8TSSOP
Produkt ist nicht verfügbar
Si6973DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8TSSOP
Description: MOSFET 2P-CH 20V 4.1A 8TSSOP
Produkt ist nicht verfügbar
SI6973DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8TSSOP
Description: MOSFET 2P-CH 20V 4.1A 8TSSOP
Produkt ist nicht verfügbar
Si6975DQ-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Produkt ist nicht verfügbar
SI6975DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Produkt ist nicht verfügbar
SI6983DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Produkt ist nicht verfügbar
SI7100DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 35A PPAK 1212-8
Description: MOSFET N-CH 8V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7102DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7104DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7104DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7114ADN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.95 EUR |
SI7115DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.16 EUR |
6000+ | 2.08 EUR |
SI7129DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.94 EUR |
6000+ | 0.9 EUR |
9000+ | 0.86 EUR |
SI7136DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Description: MOSFET N-CH 20V 30A PPAK SO-8
Produkt ist nicht verfügbar
SI7137DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.39 EUR |
6000+ | 2.3 EUR |
SI7138DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Description: MOSFET N-CH 60V 30A PPAK SO-8
Produkt ist nicht verfügbar
SI7149DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V
Description: MOSFET P-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.64 EUR |
6000+ | 1.58 EUR |
9000+ | 1.53 EUR |
SI7156DP-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Description: MOSFET N-CH 40V 50A PPAK SO-8
Produkt ist nicht verfügbar
SI7156DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Description: MOSFET N-CH 40V 50A PPAK SO-8
Produkt ist nicht verfügbar
SI7159DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5170 pF @ 15 V
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5170 pF @ 15 V
Produkt ist nicht verfügbar
SI7160DP-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Description: MOSFET N-CH 30V 20A PPAK SO-8
Produkt ist nicht verfügbar
SI7186DP-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 32A PPAK SO-8
Description: MOSFET N-CH 80V 32A PPAK SO-8
Produkt ist nicht verfügbar
SI7196DP-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1577 pF @ 15 V
Description: MOSFET N-CH 30V 16A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1577 pF @ 15 V
Produkt ist nicht verfügbar
SI7214DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Produkt ist nicht verfügbar
SI7218DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
Description: MOSFET 2N-CH 30V 24A 1212-8
Produkt ist nicht verfügbar
SI7218DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
Description: MOSFET 2N-CH 30V 24A 1212-8
Produkt ist nicht verfügbar
SI7224DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212-8
Description: MOSFET 2N-CH 30V 6A PPAK 1212-8
Produkt ist nicht verfügbar
SI7228DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
Produkt ist nicht verfügbar
SI7230DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK 1212-8
Description: MOSFET N-CH 30V 9A PPAK 1212-8
Produkt ist nicht verfügbar
SI7236DP-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 60A PWRPAK 8-SO
Description: MOSFET 2N-CH 20V 60A PWRPAK 8-SO
Produkt ist nicht verfügbar
SI7302DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 220V 8.4A 1212-8
Description: MOSFET N-CH 220V 8.4A 1212-8
Produkt ist nicht verfügbar
SI7302DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 220V 8.4A 1212-8
Description: MOSFET N-CH 220V 8.4A 1212-8
Produkt ist nicht verfügbar
SI7328DN-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7336ADP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.85 EUR |
6000+ | 1.78 EUR |
9000+ | 1.72 EUR |
SI7342DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
Description: MOSFET N-CH 30V 9A PPAK SO-8
Produkt ist nicht verfügbar