Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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DG2502DB-T2-GE1 |
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Vishay Siliconix |
Description: IC SWITCH SPST 150 OHM 16WCSP Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 400pA Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF Switch Time (Ton, Toff) (Max): 100ns, 60ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -83dB @ 1MHz Charge Injection: -2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 16-WCSP (1.44x1.44) -3db Bandwidth: 550MHz On-State Resistance (Max): 200Ohm Operating Temperature: -40°C ~ 85°C (TA) Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Package / Case: 16-XFBGA, WLCSP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG2503DB-T2-GE1 |
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Vishay Siliconix |
Description: IC SWITCH SPST 150 OHM 16WCSP Packaging: Tape & Reel (TR) Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 400pA Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF Switch Time (Ton, Toff) (Max): 100ns, 60ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -83dB @ 1MHz Charge Injection: -2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 16-WCSP (1.44x1.44) -3db Bandwidth: 550MHz On-State Resistance (Max): 200Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-XFBGA, WLCSP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC SWITCH SPST 150 OHM 16WCSP Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 400pA Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF Switch Time (Ton, Toff) (Max): 100ns, 60ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -83dB @ 1MHz Charge Injection: -2pC Packaging: Cut Tape (CT) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 16-WCSP (1.44x1.44) -3db Bandwidth: 550MHz On-State Resistance (Max): 200Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-XFBGA, WLCSP |
auf Bestellung 9 Stücke Lieferzeit 21-28 Tag (e) |
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SI4103DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 14A/16A 8SO Base Part Number: SI4103 Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 16A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 5.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 14A/16A 8SO FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI4103 Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 5.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 16A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) |
auf Bestellung 4010 Stücke Lieferzeit 21-28 Tag (e) |
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SI4101DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 25.7A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V Power Dissipation (Max): 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4101 |
auf Bestellung 200 Stücke Lieferzeit 21-28 Tag (e) |
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SIP12116DMP-T1-GE4 |
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Vishay Siliconix |
Description: IC REG BUCK ADJ 3A SYNC 10DFN Supplier Device Package: 10-DFN (3x3) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 600kHz Current - Output: 3A Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Max): 15V Voltage - Input (Min): 4.5V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC REG BUCK ADJ 3A SYNC 110DFN Voltage - Input (Max): 15V Voltage - Input (Min): 4.5V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down Supplier Device Package: 10-DFN (3x3) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 600kHz Current - Output: 3A Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 0.6V |
auf Bestellung 90 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC REG BUCK ADJ 3A SYNC 10DFN Topology: Buck Output Configuration: Positive Function: Step-Down Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 600kHz Current - Output: 3A Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Max): 15V Voltage - Input (Min): 4.5V Number of Outputs: 1 Output Type: Adjustable Supplier Device Package: 10-DFN (3x3) |
auf Bestellung 90 Stücke Lieferzeit 21-28 Tag (e) |
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SI1308EDL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 1.4A SOT323 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 Base Part Number: SI1308 |
auf Bestellung 5658 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 47456 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 1.4A SOT323 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 Base Part Number: SI1308 |
auf Bestellung 5658 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 47456 Stücke - Preis und Lieferfrist anzeigen
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SIA462DJ-T4-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V SMD Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI2338DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 6A SOT23 Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16660 Stücke - Preis und Lieferfrist anzeigen
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SI2392ADS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 3.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHD6N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHB6N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 7A D2PAK Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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;;3.jpg "SIHU6N65E-GE3") |
SIHU6N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 7A IPAK Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK (TO-251) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHP12N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 12A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB22N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 22A D2PAK Technology: MOSFET (Metal Oxide) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drain to Source Voltage (Vdss): 650V FET Type: N-Channel Part Status: Active Packaging: Tube Base Part Number: SIHB22 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHF6N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHP15N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 15A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHF15N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHF22N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 22A TO-220FK Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack Base Part Number: SIHF22 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHG22N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 22A TO-247AC Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3 Base Part Number: SIHG22 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHP24N65E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 24A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI1416EDH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 3.9A SOT-363 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.8W (Tc) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI1416 Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Mounting Type: Surface Mount |
auf Bestellung 66000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 92224 Stücke - Preis und Lieferfrist anzeigen
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SIA427ADJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 12A PPAK SC70-6 Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Base Part Number: SIA427 Manufacturer: Vishay Siliconix Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19W (Tc) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V Vgs (Max): ±5V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5111 Stücke - Preis und Lieferfrist anzeigen
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SIR172ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8-SO Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 29.8W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 32 Stücke - Preis und Lieferfrist anzeigen
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SUM70101EL-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO263 Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
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SQD100N03-3M4_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 100A TO252AA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1997 Stücke - Preis und Lieferfrist anzeigen
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SQJ992EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 15A POWERPAKSO8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Manufacturer: Vishay Siliconix Base Part Number: SQJ992 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SQP50P03-07_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 50A TO220AB Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Last Time Buy Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIC531ACD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 30A 3.3V PWM PPAK Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge Part Status: Active Packaging: Tape & Reel (TR) Current - Output / Channel: 30A Current - Peak Output: 35A Voltage - Supply: 4.5V ~ 5.5V Voltage - Load: 4.5V ~ 24V Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation Fault Protection: UVLO Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Supplier Device Package: POWERPAK® MLP4535-22L |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 30A 3.3V PWM PPAK Supplier Device Package: POWERPAK® MLP4535-22L Package / Case: PowerPAK® MLP4535-22L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 24V Voltage - Supply: 4.5V ~ 5.5V Current - Peak Output: 35A Current - Output / Channel: 30A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 3047 Stücke Lieferzeit 21-28 Tag (e) |
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SIC531CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Peak Output: 35A Current - Output / Channel: 30A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Cut Tape (CT) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Peak Output: 35A Current - Output / Channel: 30A Applications: Synchronous Buck Converters |
auf Bestellung 3003 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Supplier Device Package: POWERPAK® MLP4535-22L Package / Case: PowerPAK® MLP4535-22L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 24V Voltage - Supply: 4.5V ~ 5.5V Current - Peak Output: 35A Current - Output / Channel: 30A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 3050 Stücke Lieferzeit 21-28 Tag (e) |
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SIC521ACD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 30A 3.3V PWM PPAK Current - Peak Output: 40A Current - Output / Channel: 30A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge Part Status: Active Packaging: Tape & Reel (TR) Voltage - Supply: 4.5V ~ 5.5V Voltage - Load: 4.5V ~ 18V Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation Fault Protection: UVLO Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Supplier Device Package: POWERPAK® MLP4535-22L |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 30A 3.3V PWM PPAK Supplier Device Package: POWERPAK® MLP4535-22L Package / Case: PowerPAK® MLP4535-22L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Current - Peak Output: 40A Current - Output / Channel: 30A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 3050 Stücke Lieferzeit 21-28 Tag (e) |
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SIC521CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Current - Output / Channel: 30A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Part Status: Active Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Tape & Reel (TR) Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Current - Peak Output: 40A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Current - Output / Channel: 30A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Cut Tape (CT) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Current - Peak Output: 40A |
auf Bestellung 483 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Supplier Device Package: POWERPAK® MLP4535-22L Package / Case: PowerPAK® MLP4535-22L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Current - Peak Output: 40A Current - Output / Channel: 30A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 3050 Stücke Lieferzeit 21-28 Tag (e) |
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SIC530CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Tape & Reel (TR) Current - Peak Output: 40A Current - Output / Channel: 30A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 20V Technology: Power MOSFET |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3360 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Current - Peak Output: 40A Current - Output / Channel: 30A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Cut Tape (CT) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 20V Technology: Power MOSFET |
auf Bestellung 1803 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3360 Stücke - Preis und Lieferfrist anzeigen
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SIC532CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Current - Peak Output: 35A Current - Output / Channel: 30A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Tape & Reel (TR) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Part Status: Active Load Type: Inductive Current - Output / Channel: 30A Fault Protection: UVLO Supplier Device Package: POWERPAK® MLP4535-22L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Peak Output: 35A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP4535-22L Features: Bootstrap Circuit, Diode Emulation Packaging: Cut Tape (CT) |
auf Bestellung 2098 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 30A 5V PWM PPAK ML Supplier Device Package: POWERPAK® MLP4535-22L Package / Case: PowerPAK® MLP4535-22L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 24V Voltage - Supply: 4.5V ~ 5.5V Current - Peak Output: 35A Current - Output / Channel: 30A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 3030 Stücke Lieferzeit 21-28 Tag (e) |
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SIC632ACD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 50A 3.3V PWM PPAK Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Output / Channel: 50A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 50A 3.3V PWM PPAK Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Output / Channel: 50A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) |
auf Bestellung 874 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 50A 3.3V PWM PPAK Supplier Device Package: PowerPAK® MLP55-31L Package / Case: PowerPAK® MLP55-31L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 24V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 50A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 3050 Stücke Lieferzeit 21-28 Tag (e) |
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SIC632CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 50A 5V PWM PPAK ML Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Output / Channel: 50A Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 50A 5V PWM PPAK ML Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) Current - Output / Channel: 50A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) |
auf Bestellung 5904 Stücke Lieferzeit 21-28 Tag (e) |
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SIC631CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 50A 5V PWM PPAK ML Current - Output / Channel: 50A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation Packaging: Tape & Reel (TR) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Peak Output: 55A |
auf Bestellung 24000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 50A 5V PWM PPAK ML Current - Output / Channel: 50A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation Packaging: Cut Tape (CT) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 24V Technology: Power MOSFET Current - Peak Output: 55A |
auf Bestellung 26987 Stücke Lieferzeit 21-28 Tag (e) |
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SIC620RCD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 60A 5V PWM PPAK Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 60A 5V PWM PPAK Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) Part Status: Active Load Type: Inductive Fault Protection: UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 60A 5V PWM PPAK Supplier Device Package: PowerPAK® MLP55-31L Package / Case: PowerPAK® MLP55-31L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 60A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 2970 Stücke Lieferzeit 21-28 Tag (e) |
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SIP2100DY-T1-GE3 |
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Vishay Siliconix |
Description: IC MTR DRV BIPOLR 3.8-5.5V 8SOIC Output Configuration: Half Bridge (2) Function: Driver - Fully Integrated, Control and Power Stage Motor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Part Status: Active Packaging: Tape & Reel (TR) Applications: General Purpose Manufacturer: Vishay Siliconix Base Part Number: SIP2100 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: Power MOSFET Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 3.8V ~ 5.5V Voltage - Supply: 3.8V ~ 5.5V Current - Output: 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC H-BRIDGE MOTOR DRIVER 8SOIC Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 3.8 V ~ 5.5 V Voltage - Supply: 3.8V ~ 5.5V Current - Output: 1A Applications: General Purpose Technology: Power MOSFET Interface: Parallel Output Configuration: Half Bridge (2) Function: Driver - Fully Integrated, Control and Power Stage Motor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar |
auf Bestellung 2781 Stücke Lieferzeit 21-28 Tag (e) |
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SIC620ARCD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 60A 3.3V PWM PPAK Current - Output / Channel: 60A Technology: Power MOSFET Base Part Number: SIC620 Supplier Device Package: PowerPAK® MLP55-31L Package / Case: PowerPAK® MLP55-31L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 60A 3.3V PWM PPAK Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIC620 Supplier Device Package: PowerPAK® MLP55-31L Package / Case: PowerPAK® MLP55-31L Mounting Type: Surface Mount Fault Protection: UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 60A |
auf Bestellung 3038 Stücke Lieferzeit 21-28 Tag (e) |
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| SIC770CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR PFC STAGE PPAK MLP66-40 Output Configuration: Half Bridge Applications: Synchronous Buck Converters Interface: PWM Load Type: Inductive Technology: DrMOS Voltage - Supply: 4.5V ~ 5.5V Voltage - Load: 4.5V ~ 24V Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation, Status Flag Fault Protection: Over Temperature, Shoot-Through, UVLO Mounting Type: Surface Mount Package / Case: PowerPAK® MLP66-40 Supplier Device Package: PowerPAK® MLP66-40 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
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SIC779ACD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR PFC STAGE PPAK MLP66-40 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 3V ~ 16V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 35A Technology: DrMOS Supplier Device Package: PowerPAK® MLP66-40 Load Type: Inductive Package / Case: 40-PowerWFQFN Module Mounting Type: Surface Mount Fault Protection: Over Temperature, Shoot-Through, UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2880 Stücke - Preis und Lieferfrist anzeigen
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IRF610STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 3.3A D2PAK Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
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SUP70060E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO220AB Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 131A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIC469ED-T1-GE3 |
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Vishay Siliconix |
Description: SYNC REG 2A MICROBUCK PP MLP55-2 Supplier Device Package: PowerPAK® MLP55-27 Package / Case: PowerPAK® MLP55-27 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Synchronous Rectifier: Yes Frequency - Switching: 100kHz ~ 2MHz Current - Output: 2A Voltage - Output (Max): 55.2V Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Max): 60V Voltage - Input (Min): 4.5V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI4850BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHF9630STRL-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 6.5A D2PAK Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 3W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SIHF9630 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHFZ48S-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A D2PAK Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHFL110TR-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI4100DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: N-Channel Base Part Number: SI4100 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) |
auf Bestellung 7081 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 110727 Stücke - Preis und Lieferfrist anzeigen
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SIHFR9120-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 5.6A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: SiHFR9120 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHFL9014TR-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 1.8A SOT223 Manufacturer: Vishay Siliconix Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIHFL9014 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHF540S-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 28A D2PAK Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SIHF540 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI3900DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 2A 6-TSOP Base Part Number: SI3900 Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 7834 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2851344 Stücke - Preis und Lieferfrist anzeigen
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SI1902CDL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.1A SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.1A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI1902 Manufacturer: Vishay Siliconix Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 420mW Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V |
auf Bestellung 9513 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
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SI3585CDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 3.9A 6TSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI3585 Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W, 1.3W Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V |
auf Bestellung 15374 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
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SI5504BDC-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4A 1206-8 Part Status: Active Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Drain to Source Voltage (Vdss): 30V FET Type: N and P-Channel Power - Max: 3.12W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 11 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4A 1206-8 Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Base Part Number: SI5504 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.12W, 3.1W Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 50256 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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SQ9945BEY-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.4A Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SQ9945 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.4A Base Part Number: SQ9945 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 3517 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI9926CDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 8A 8-SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 20V FET Type: 2 N-Channel (Dual) Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80000 Stücke - Preis und Lieferfrist anzeigen
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SQ4946AEY-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V |
auf Bestellung 2380 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
auf Bestellung 2380 Stücke Lieferzeit 21-28 Tag (e) |
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SQJ960EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI1553CDL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC70-6 Base Part Number: SI1553 Supplier Device Package: SC-70-6 (SOT-363) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 340mW Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Manufacturer: Vishay Siliconix Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 17008 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 26182 Stücke - Preis und Lieferfrist anzeigen
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SQ4940AEY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 40V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| SQJ844AEP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2957 Stücke - Preis und Lieferfrist anzeigen
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SQJ912AEP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 30A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 30A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5369 Stücke - Preis und Lieferfrist anzeigen
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| DG2502DB-T2-GE1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 150 OHM 16WCSP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 400pA
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -83dB @ 1MHz
Charge Injection: -2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-WCSP (1.44x1.44)
-3db Bandwidth: 550MHz
On-State Resistance (Max): 200Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 16-XFBGA, WLCSP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH SPST 150 OHM 16WCSP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 400pA
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -83dB @ 1MHz
Charge Injection: -2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-WCSP (1.44x1.44)
-3db Bandwidth: 550MHz
On-State Resistance (Max): 200Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 16-XFBGA, WLCSP
| DG2503DB-T2-GE1 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 150 OHM 16WCSP
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 400pA
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -83dB @ 1MHz
Charge Injection: -2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-WCSP (1.44x1.44)
-3db Bandwidth: 550MHz
On-State Resistance (Max): 200Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-XFBGA, WLCSP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH SPST 150 OHM 16WCSP
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 400pA
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -83dB @ 1MHz
Charge Injection: -2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-WCSP (1.44x1.44)
-3db Bandwidth: 550MHz
On-State Resistance (Max): 200Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-XFBGA, WLCSP
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
| DG2503DB-T2-GE1 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 150 OHM 16WCSP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 400pA
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -83dB @ 1MHz
Charge Injection: -2pC
Packaging: Cut Tape (CT)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-WCSP (1.44x1.44)
-3db Bandwidth: 550MHz
On-State Resistance (Max): 200Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-XFBGA, WLCSP
auf Bestellung 9 Stücke Description: IC SWITCH SPST 150 OHM 16WCSP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 400pA
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -83dB @ 1MHz
Charge Injection: -2pC
Packaging: Cut Tape (CT)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-WCSP (1.44x1.44)
-3db Bandwidth: 550MHz
On-State Resistance (Max): 200Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-XFBGA, WLCSP
Lieferzeit 21-28 Tag (e)
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| SI4103DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A/16A 8SO
Base Part Number: SI4103
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2500 Stücke Description: MOSFET P-CH 30V 14A/16A 8SO
Base Part Number: SI4103
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4010 Stücke - Preis und Lieferfrist anzeigen
| SI4103DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A/16A 8SO
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI4103
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
auf Bestellung 4010 Stücke Description: MOSFET P-CH 30V 14A/16A 8SO
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI4103
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| SI4101DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 25.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4101
auf Bestellung 200 Stücke Description: MOSFET P-CH 30V 25.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4101
Lieferzeit 21-28 Tag (e)
| SIP12116DMP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A SYNC 10DFN
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 600kHz
Current - Output: 3A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG BUCK ADJ 3A SYNC 10DFN
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 600kHz
Current - Output: 3A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
auf Bestellung 180 Stücke - Preis und Lieferfrist anzeigen
| SIP12116DMP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A SYNC 110DFN
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 600kHz
Current - Output: 3A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 90 Stücke Description: IC REG BUCK ADJ 3A SYNC 110DFN
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 600kHz
Current - Output: 3A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Lieferzeit 21-28 Tag (e)
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
| SIP12116DMP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A SYNC 10DFN
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 600kHz
Current - Output: 3A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Supplier Device Package: 10-DFN (3x3)
auf Bestellung 90 Stücke Description: IC REG BUCK ADJ 3A SYNC 10DFN
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 600kHz
Current - Output: 3A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Supplier Device Package: 10-DFN (3x3)
Lieferzeit 21-28 Tag (e)
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
| SI1308EDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.4A SOT323
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Base Part Number: SI1308
auf Bestellung 5658 Stücke Description: MOSFET N-CH 30V 1.4A SOT323
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Base Part Number: SI1308
Lieferzeit 21-28 Tag (e)
auf Bestellung 53114 Stücke - Preis und Lieferfrist anzeigen
| SI1308EDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.4A SOT323
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Base Part Number: SI1308
auf Bestellung 5658 Stücke Description: MOSFET N-CH 30V 1.4A SOT323
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Base Part Number: SI1308
Lieferzeit 21-28 Tag (e)
auf Bestellung 53114 Stücke - Preis und Lieferfrist anzeigen
| SIA462DJ-T4-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SMD
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V SMD
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
| SI2338DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A SOT23
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 6A SOT23
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
auf Bestellung 16660 Stücke - Preis und Lieferfrist anzeigen
| SI2392ADS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
| SIHD6N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
| SIHB6N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 7A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| SIHU6N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
| SIHP12N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1 Stücke Description: MOSFET N-CH 650V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| SIHB22N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A D2PAK
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 650V
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: SIHB22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 22A D2PAK
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 650V
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: SIHB22
| SIHF6N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
| SIHP15N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
| SIHF15N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
| SIHF22N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A TO-220FK
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHF22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 22A TO-220FK
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHF22
| SIHG22N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A TO-247AC
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
Power Dissipation (Max): 227W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Base Part Number: SIHG22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 22A TO-247AC
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
Power Dissipation (Max): 227W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Base Part Number: SIHG22
| SIHP24N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
| SI1416EDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.9A SOT-363
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1416
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
auf Bestellung 66000 Stücke Description: MOSFET N-CH 30V 3.9A SOT-363
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1416
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 92224 Stücke - Preis und Lieferfrist anzeigen
| SIA427ADJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Base Part Number: SIA427
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
Vgs (Max): ±5V
auf Bestellung 3000 Stücke Description: MOSFET P-CH 8V 12A PPAK SC70-6
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Base Part Number: SIA427
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
Vgs (Max): ±5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5111 Stücke - Preis und Lieferfrist anzeigen
| SIR172ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8-SO
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 24A 8-SO
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
auf Bestellung 32 Stücke - Preis und Lieferfrist anzeigen
| SUM70101EL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
| SQD100N03-3M4_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A TO252AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A TO252AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
auf Bestellung 1997 Stücke - Preis und Lieferfrist anzeigen
| SQJ992EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A POWERPAKSO8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SQJ992
auf Bestellung 3000 Stücke Description: MOSFET 2N-CH 60V 15A POWERPAKSO8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SQJ992
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SQP50P03-07_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO220AB
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 50A TO220AB
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
| SIC531ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 3.3V PWM PPAK
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Output / Channel: 30A
Current - Peak Output: 35A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Supplier Device Package: POWERPAK® MLP4535-22L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 30A 3.3V PWM PPAK
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Output / Channel: 30A
Current - Peak Output: 35A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Supplier Device Package: POWERPAK® MLP4535-22L
auf Bestellung 3047 Stücke - Preis und Lieferfrist anzeigen
| SIC531ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 3.3V PWM PPAK
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 35A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 3047 Stücke Description: IC CTLR STAGE 30A 3.3V PWM PPAK
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 35A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
| SIC531CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 35A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 30A 5V PWM PPAK ML
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 35A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
auf Bestellung 6053 Stücke - Preis und Lieferfrist anzeigen
| SIC531CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 35A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
auf Bestellung 3003 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 35A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Lieferzeit 21-28 Tag (e)
auf Bestellung 3050 Stücke - Preis und Lieferfrist anzeigen
|
| SIC531CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 35A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 3050 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 35A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 3003 Stücke - Preis und Lieferfrist anzeigen
| SIC521ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 3.3V PWM PPAK
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Supplier Device Package: POWERPAK® MLP4535-22L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 30A 3.3V PWM PPAK
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Supplier Device Package: POWERPAK® MLP4535-22L
auf Bestellung 3050 Stücke - Preis und Lieferfrist anzeigen
| SIC521ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 3.3V PWM PPAK
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 3050 Stücke Description: IC CTLR STAGE 30A 3.3V PWM PPAK
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
| SIC521CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Part Status: Active
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Peak Output: 40A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Part Status: Active
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Peak Output: 40A
auf Bestellung 3533 Stücke - Preis und Lieferfrist anzeigen
| SIC521CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Peak Output: 40A
auf Bestellung 483 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Peak Output: 40A
Lieferzeit 21-28 Tag (e)
auf Bestellung 3050 Stücke - Preis und Lieferfrist anzeigen
|
| SIC521CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 3050 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 483 Stücke - Preis und Lieferfrist anzeigen
| SIC530CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Current - Peak Output: 40A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 20V
Technology: Power MOSFET
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 30A 5V PWM PPAK ML
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Current - Peak Output: 40A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 20V
Technology: Power MOSFET
auf Bestellung 5163 Stücke - Preis und Lieferfrist anzeigen
| SIC530CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Peak Output: 40A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 20V
Technology: Power MOSFET
auf Bestellung 1803 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Peak Output: 40A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 20V
Technology: Power MOSFET
Lieferzeit 21-28 Tag (e)
auf Bestellung 3360 Stücke - Preis und Lieferfrist anzeigen
|
| SIC532CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Peak Output: 35A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 30A 5V PWM PPAK ML
Current - Peak Output: 35A
Current - Output / Channel: 30A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
auf Bestellung 5128 Stücke - Preis und Lieferfrist anzeigen
| SIC532CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Part Status: Active
Load Type: Inductive
Current - Output / Channel: 30A
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
auf Bestellung 2098 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Part Status: Active
Load Type: Inductive
Current - Output / Channel: 30A
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3030 Stücke - Preis und Lieferfrist anzeigen
|
| SIC532CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 35A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 3030 Stücke Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 35A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 2098 Stücke - Preis und Lieferfrist anzeigen
| SIC632ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 3.3V PWM PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 50A 3.3V PWM PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
auf Bestellung 3924 Stücke - Preis und Lieferfrist anzeigen
| SIC632ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 3.3V PWM PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 874 Stücke Description: IC CTLR STAGE 50A 3.3V PWM PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3050 Stücke - Preis und Lieferfrist anzeigen
| SIC632ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 3.3V PWM PPAK
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 3050 Stücke Description: IC CTLR STAGE 50A 3.3V PWM PPAK
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 24V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 874 Stücke - Preis und Lieferfrist anzeigen
| SIC632CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Output / Channel: 50A
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Output / Channel: 50A
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5904 Stücke - Preis und Lieferfrist anzeigen
|
| SIC632CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 5904 Stücke Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SIC631CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 55A
auf Bestellung 24000 Stücke Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 55A
Lieferzeit 21-28 Tag (e)
auf Bestellung 26987 Stücke - Preis und Lieferfrist anzeigen
|
| SIC631CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 55A
auf Bestellung 26987 Stücke Description: IC CTLR STAGE 50A 5V PWM PPAK ML
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 55A
Lieferzeit 21-28 Tag (e)
auf Bestellung 24000 Stücke - Preis und Lieferfrist anzeigen
|
| SIC620RCD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A 5V PWM PPAK
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: IC CTLR STAGE 60A 5V PWM PPAK
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8970 Stücke - Preis und Lieferfrist anzeigen
|
| SIC620RCD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A 5V PWM PPAK
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
auf Bestellung 6000 Stücke Description: IC CTLR STAGE 60A 5V PWM PPAK
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Lieferzeit 21-28 Tag (e)
auf Bestellung 5970 Stücke - Preis und Lieferfrist anzeigen
|
| SIC620RCD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A 5V PWM PPAK
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 2970 Stücke Description: IC CTLR STAGE 60A 5V PWM PPAK
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| SIP2100DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPOLR 3.8-5.5V 8SOIC
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Part Status: Active
Packaging: Tape & Reel (TR)
Applications: General Purpose
Manufacturer: Vishay Siliconix
Base Part Number: SIP2100
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: Power MOSFET
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3.8V ~ 5.5V
Voltage - Supply: 3.8V ~ 5.5V
Current - Output: 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MTR DRV BIPOLR 3.8-5.5V 8SOIC
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Part Status: Active
Packaging: Tape & Reel (TR)
Applications: General Purpose
Manufacturer: Vishay Siliconix
Base Part Number: SIP2100
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: Power MOSFET
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3.8V ~ 5.5V
Voltage - Supply: 3.8V ~ 5.5V
Current - Output: 1A
auf Bestellung 2781 Stücke - Preis und Lieferfrist anzeigen
| SIP2100DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC H-BRIDGE MOTOR DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3.8 V ~ 5.5 V
Voltage - Supply: 3.8V ~ 5.5V
Current - Output: 1A
Applications: General Purpose
Technology: Power MOSFET
Interface: Parallel
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
auf Bestellung 2781 Stücke Description: IC H-BRIDGE MOTOR DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3.8 V ~ 5.5 V
Voltage - Supply: 3.8V ~ 5.5V
Current - Output: 1A
Applications: General Purpose
Technology: Power MOSFET
Interface: Parallel
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Lieferzeit 21-28 Tag (e)
| SIC620ARCD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A 3.3V PWM PPAK
Current - Output / Channel: 60A
Technology: Power MOSFET
Base Part Number: SIC620
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke Description: IC CTLR STAGE 60A 3.3V PWM PPAK
Current - Output / Channel: 60A
Technology: Power MOSFET
Base Part Number: SIC620
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 3038 Stücke - Preis und Lieferfrist anzeigen
| SIC620ARCD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A 3.3V PWM PPAK
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIC620
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
auf Bestellung 3038 Stücke Description: IC CTLR STAGE 60A 3.3V PWM PPAK
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIC620
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIC770CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: DrMOS
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Supplier Device Package: PowerPAK® MLP66-40
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR PFC STAGE PPAK MLP66-40
Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: DrMOS
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Supplier Device Package: PowerPAK® MLP66-40
| SIC779ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3V ~ 16V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 35A
Technology: DrMOS
Supplier Device Package: PowerPAK® MLP66-40
Load Type: Inductive
Package / Case: 40-PowerWFQFN Module
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR PFC STAGE PPAK MLP66-40
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3V ~ 16V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 35A
Technology: DrMOS
Supplier Device Package: PowerPAK® MLP66-40
Load Type: Inductive
Package / Case: 40-PowerWFQFN Module
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2880 Stücke - Preis und Lieferfrist anzeigen
| IRF610STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A D2PAK
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 3.3A D2PAK
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
| SUP70060E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 131A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 131A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V
| SIC469ED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: SYNC REG 2A MICROBUCK PP MLP55-2
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 2A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SYNC REG 2A MICROBUCK PP MLP55-2
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 2A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
| SI4850BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 8.4A/11.3A 8SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
| SIHF9630STRL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF9630
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 6.5A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF9630
| SIHFZ48S-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 50A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
| SIHFL110TR-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
| SI4100DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Base Part Number: SI4100
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
auf Bestellung 7081 Stücke Description: MOSFET N-CH 100V 6.8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Base Part Number: SI4100
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 110727 Stücke - Preis und Lieferfrist anzeigen
| SIHFR9120-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SiHFR9120
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 5.6A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SiHFR9120
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
| SIHFL9014TR-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223
Manufacturer: Vishay Siliconix
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHFL9014
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 1.8A SOT223
Manufacturer: Vishay Siliconix
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHFL9014
| SIHF540S-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 28A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF540
| SI3900DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6-TSOP
Base Part Number: SI3900
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 7834 Stücke Description: MOSFET 2N-CH 20V 2A 6-TSOP
Base Part Number: SI3900
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2851344 Stücke - Preis und Lieferfrist anzeigen
| SI1902CDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1902
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 420mW
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
auf Bestellung 9513 Stücke Description: MOSFET 2N-CH 20V 1.1A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1902
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 420mW
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| SI3585CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W, 1.3W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
auf Bestellung 15374 Stücke Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W, 1.3W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
| SI5504BDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Type: N and P-Channel
Power - Max: 3.12W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 11 Stücke Description: MOSFET N/P-CH 30V 4A 1206-8
Part Status: Active
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Type: N and P-Channel
Power - Max: 3.12W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 62256 Stücke - Preis und Lieferfrist anzeigen
| SI5504BDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI5504
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 50256 Stücke Description: MOSFET N/P-CH 30V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI5504
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 12011 Stücke - Preis und Lieferfrist anzeigen
| SQ9945BEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQ9945
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 2500 Stücke Description: MOSFET 2N-CH 60V 5.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQ9945
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 801717 Stücke - Preis und Lieferfrist anzeigen
| SQ9945BEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A
Base Part Number: SQ9945
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3517 Stücke Description: MOSFET 2N-CH 60V 5.4A
Base Part Number: SQ9945
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 800700 Stücke - Preis und Lieferfrist anzeigen
| SI9926CDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 8A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 80000 Stücke - Preis und Lieferfrist anzeigen
| SQ4946AEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 7A
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 4760 Stücke - Preis und Lieferfrist anzeigen
| SQ4946AEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
auf Bestellung 2380 Stücke Description: MOSFET 2N-CH 60V 7A
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2380 Stücke - Preis und Lieferfrist anzeigen
| SQ4946AEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 2380 Stücke Description: MOSFET 2N-CH 60V 7A
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2380 Stücke - Preis und Lieferfrist anzeigen
| SQJ960EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 8A
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
| SI1553CDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 17008 Stücke Description: MOSFET N/P-CH 20V SC70-6
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 26182 Stücke - Preis und Lieferfrist anzeigen
| SQ4940AEY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 8A 8SOIC
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
| SQJ844AEP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
auf Bestellung 2957 Stücke - Preis und Lieferfrist anzeigen
| SQJ912AEP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET 2N-CH 40V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5369 Stücke - Preis und Lieferfrist anzeigen
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