Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SIP32468DB-T2-GE1 |
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Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP Packaging: Cut Tape (CT) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 50mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (0.76x0.76) Package / Case: 4-UFBGA, WLCSP Base Part Number: SIP324 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SIP32467DB-T2-GE1 |
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Vishay Siliconix |
Description: LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 50mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (0.76x0.76) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 50mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (0.76x0.76) |
auf Bestellung 75 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 50mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (0.76x0.76) |
auf Bestellung 75 Stücke Lieferzeit 21-28 Tag (e) |
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SIP12108DB |
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Vishay Siliconix |
Description: EVAL BOARD BUCK REG ADJ 5A Regulator Topology: Buck Voltage - Input: 2.8V ~ 5.5V Current - Output: 5A Voltage - Output: 1.8V Outputs and Type: 1, Non-Isolated Main Purpose: DC/DC, Step Down Utilized IC / Part: SiP12108 Supplied Contents: Board Board Type: Fully Populated |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e) |
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SIC413DB |
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Vishay Siliconix |
Description: EVAL BOARD BUCK REG 26V 4A Utilized IC / Part: SiC413 Supplied Contents: Board Board Type: Fully Populated Frequency - Switching: 500kHz Regulator Topology: Buck Voltage - Input: 4.75 V ~ 26 V Current - Output: 4A Voltage - Output: 3.3V Outputs and Type: 1, Non-Isolated Main Purpose: DC/DC, Step Down |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87520 Stücke - Preis und Lieferfrist anzeigen
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SIC401DB |
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Vishay Siliconix |
Description: EVAL BOARD BUCK REG ADJ 15A Packaging: Box Voltage - Input: 3V ~ 17V Current - Output: 15A, 200mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SiC401 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down with LDO Outputs and Type: 2, Non-Isolated Part Status: Active |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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SIC402DB |
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Vishay Siliconix |
Description: EVAL BOARD BUCK REG ADJ 10A Packaging: Box Voltage - Input: 3V ~ 28V Current - Output: 10A, 200mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SiC402 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down with LDO Outputs and Type: 2, Non-Isolated Part Status: Active |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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SIC403DB |
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Vishay Siliconix |
Description: EVAL BOARD BUCK REG ADJ 6A Voltage - Input: 3V ~ 28V Current - Output: 6A, 200mA Outputs and Type: 2, Non-Isolated Utilized IC / Part: SiC403 Supplied Contents: Board(s) Board Type: Fully Populated Regulator Topology: Buck Main Purpose: DC/DC, Step Down with LDO Part Status: Active |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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SI9112DY-E3 |
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Vishay Siliconix |
Description: IC REG CTRLR MULT TOP 14SOIC Output Phases: 1 Control Features: Enable, Reset Synchronous Rectifier: No Supplier Device Package: 14-SOIC Voltage - Supply (Vcc/Vdd): 9V ~ 13.5V Topology: Cuk, Flyback, Forward Converter, Push-Pull Frequency - Switching: 40kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Function: Step-Up/Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tube Number of Outputs: 1 Part Status: Obsolete Clock Sync: No |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIRA16DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V D-S PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIRA16 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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SQ2319ES-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 4.6A TO-236 Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drain to Source Voltage (Vdss): 40V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Cut Tape (CT) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
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SI7121ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3991 Stücke - Preis und Lieferfrist anzeigen
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SI4403CDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 13.4A 8SO Base Part Number: SI4403 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Packaging: Tape & Reel (TR) Part Status: Active Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5802 Stücke - Preis und Lieferfrist anzeigen
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SQM50P03-07_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CHANNEL 30V 50A TO263 Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 282 Stücke - Preis und Lieferfrist anzeigen
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SQW61N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 62A TO247AD Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 344nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7379pF @ 100V Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3 Base Part Number: SQW61 |
auf Bestellung 478 Stücke Lieferzeit 21-28 Tag (e) |
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SI2324DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 2.3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.9V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1212 Stücke - Preis und Lieferfrist anzeigen
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SI2333CDS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) |
auf Bestellung 39601 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 24071 Stücke - Preis und Lieferfrist anzeigen
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SIHP125N60EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 25A TO220AB Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: SIHP125 Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 179W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 975 Stücke Lieferzeit 21-28 Tag (e) |
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SIP32101DB-T1-GE1 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP Supplier Device Package: 12-WCSP (1.71x1.31) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Features: Slew Rate Controlled Rds On (Typ): 6.5mOhm Current - Output (Max): 5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.3V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIP32101 Manufacturer: Vishay Siliconix Package / Case: 12-UFBGA, CSPBGA |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9431 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP Supplier Device Package: 12-WCSP (1.71x1.31) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Features: Slew Rate Controlled Rds On (Typ): 6.5mOhm Current - Output (Max): 5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.3V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SIP32101 Manufacturer: Vishay Siliconix Package / Case: 12-UFBGA, CSPBGA |
auf Bestellung 4450 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9431 Stücke - Preis und Lieferfrist anzeigen
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.jpg "SIP4282ADNP3-T1GE4") |
SIP4282ADNP3-T1GE4 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN Base Part Number: SIP4282 Package / Case: 4-UFDFN Exposed Pad Supplier Device Package: 4-TDFN (1.2x1.6) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 350mOhm Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIP4282DVP3-T1GE3 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK Base Part Number: SIP4282 Package / Case: PowerPAK® SC-75-6L Supplier Device Package: PowerPAK® SC-75-6L Single Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Fault Protection: UVLO Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 105mOhm Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.8V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 48 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC LOAD SW CTRL SLEW RATE PPAK Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.8V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Number of Outputs: 1 Switch Type: General Purpose Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Operating Temperature: -40°C ~ 125°C (TJ) Fault Protection: UVLO Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 105mOhm Current - Output (Max): 1.4A |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e) |
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SIP4282ADVP2-T1GE3 |
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Vishay Siliconix |
Description: IC LOAD SW CTRL SLEW RATE PPAK Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Number of Outputs: 1 Switch Type: General Purpose Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Operating Temperature: -40°C ~ 125°C (TJ) Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 350mOhm |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIP4282ADVP3-T1GE3 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK Voltage - Load: 1.5V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIP4282 Package / Case: PowerPAK® SC-75-6L Supplier Device Package: PowerPAK® SC-75-6L Single Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 350mOhm Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required |
auf Bestellung 1598 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC LOAD SW CTRL SLEW RATE PPAK Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Operating Temperature: -40°C ~ 125°C (TJ) Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 350mOhm Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Number of Outputs: 1 Switch Type: General Purpose |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e) |
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.jpg "SIP4282ADNP2-T1GE4") |
SIP4282ADNP2-T1GE4 |
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Vishay Siliconix |
Description: IC LOAD SW CTRL SLEW RATE 4TDFN Switch Type: General Purpose Number of Outputs: 1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Rds On (Typ): 350mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFDFN Exposed Pad Supplier Device Package: 4-TDFN (1.2x1.6) |
auf Bestellung 10 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC LOAD SW CTRL SLEW RATE 4TDFN Switch Type: General Purpose Number of Outputs: 1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Rds On (Typ): 350mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 4-UFDFN Exposed Pad Supplier Device Package: 4-TDFN (1.2x1.6) |
auf Bestellung 10 Stücke Lieferzeit 21-28 Tag (e) |
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SIP4282DNP3-T1GE4 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN Part Status: Active Fault Protection: UVLO Supplier Device Package: 4-TDFN (1.2x1.6) Ratio - Input:Output: 1:1 Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.8V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 105mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 125°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 4-UFDFN Exposed Pad Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 8925 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC LOAD SW CTRL SLEW RATE 4TDFN Supplier Device Package: 4-TDFN (1.2x1.6) Package / Case: 4-UFDFN Exposed Pad Operating Temperature: -40°C ~ 125°C (TJ) Fault Protection: UVLO Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 105mOhm Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.8V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Number of Outputs: 1 Switch Type: General Purpose |
auf Bestellung 10 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SIZ914DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A PWRPAIR Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 22.7W, 100W Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Supplier Device Package: 8-PowerPair® Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A PWRPAIR Power - Max: 22.7W, 100W Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Supplier Device Package: 8-PowerPair® Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 2990 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A PWRPAIR Supplier Device Package: 8-PowerPair® Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 22.7W, 100W |
auf Bestellung 2990 Stücke Lieferzeit 21-28 Tag (e) |
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SIA936EDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC-70 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Vgs(th) (Max) @ Id: 1.3V @ 250µA Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIA923AEDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A SC70-6L Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Type: 2 P-Channel (Dual) Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A SC70-6L Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W |
auf Bestellung 4087 Stücke Lieferzeit 21-28 Tag (e) |
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SIA537EDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 12V/20V SC-70-6L Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 12V, 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N/P-CH 12V/20V SC-70-6L Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 12V, 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Cut Tape (CT) Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual |
auf Bestellung 11630 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N/P-CH 12V/20V SC-70-6L Base Part Number: SIA537 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 12V, 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 15000 Stücke Lieferzeit 21-28 Tag (e) |
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SISF00DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET DUAL N-CH 30V POWERPAK 12 Supplier Device Package: PowerPAK® 1212-8SCD Package / Case: PowerPAK® 1212-8SCD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Dual) Common Drain Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4855 Stücke - Preis und Lieferfrist anzeigen
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SISB46DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V POWERPAK 1212-8 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 23W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 11.71mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| SI9112DY-E3 |
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Vishay Siliconix |
Description: IC REG CTRLR FLYBK CUK CM 14SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width) Operating Temperature: -40°C ~ 85°C Isolated: No Cuk: Yes Divider: No Doubler: No Inverting: No Flyback: Yes Buck: No Voltage - Supply: 9 V ~ 13.5 V Duty Cycle: 50% Frequency - Max: 3MHz Number of Outputs: 1 PWM Type: Current Mode Boost: No |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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SIP12109DMP-T1-GE4 |
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Vishay Siliconix |
Description: IC REG BUCK ADJUSTABLE 4A 16MLP Synchronous Rectifier: Yes Frequency - Switching: 400kHz ~ 1.5MHz Current - Output: 4A Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Max): 15V Voltage - Input (Min): 4.5V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIP12109 Supplier Device Package: 16-MLP (3x3) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1028 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC REG BUCK ADJUSTABLE 4A 16MLP Base Part Number: SIP12109 Supplier Device Package: 16-MLP (3x3) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Max): 15V Voltage - Input (Min): 4.5V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Synchronous Rectifier: Yes Frequency - Switching: 400kHz ~ 1.5MHz Current - Output: 4A |
auf Bestellung 19 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1028 Stücke - Preis und Lieferfrist anzeigen
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SISA18ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 38.3A PPAK1212-8 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SISA12ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 25A PPAK1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Manufacturer: Vishay Siliconix Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SISA12 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 3175 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SIR330DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK SO-8 Packaging: Cut Tape (CT) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SUD42N03-3M9P-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 42A TO252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.9mOhm @ 22A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 42A TO252 Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.5W |
auf Bestellung 4540 Stücke Lieferzeit 21-28 Tag (e) |
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SIR818DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIHA12N60E-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 12A TO220 Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIHA15N60E-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 15A TO220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack |
auf Bestellung 11 Stücke Lieferzeit 21-28 Tag (e) |
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SIHA22N60E-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) |
auf Bestellung 951 Stücke Lieferzeit 21-28 Tag (e) |
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SI2309CDS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SOT23-3 Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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2N7002-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11390 Stücke - Preis und Lieferfrist anzeigen
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SIRA34DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31.25W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 2311 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31.25W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
auf Bestellung 2311 Stücke Lieferzeit 21-28 Tag (e) |
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SISA16DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 16A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SISA16 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V D-S PPAK 1212-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Power - Max: 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 5975 Stücke Lieferzeit 21-28 Tag (e) |
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SIRA16DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V D-S PPAK SO-8 Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIRA16 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V D-S PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Power - Max: 3.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SQ2319ES-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 4.6A TO-236 Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
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SI7157DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Base Part Number: SI7157 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 13112 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21446 Stücke - Preis und Lieferfrist anzeigen
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SUD06N10-225L-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 6.5A DPAK Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SUP90N06-6M0P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 90A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3080 Stücke - Preis und Lieferfrist anzeigen
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SI3421DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6810 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Packaging: Cut Tape (CT) |
auf Bestellung 268 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6810 Stücke - Preis und Lieferfrist anzeigen
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SI7121ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 389 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3602 Stücke - Preis und Lieferfrist anzeigen
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SI8851EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V PWR MICRO FOOT Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: Power Micro Foot® (2.4x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 30-XFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 20V 7.7A MICRO FOOT Supplier Device Package: Power Micro Foot® Package / Case: 30-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 660mW Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 8 mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 5770 Stücke Lieferzeit 21-28 Tag (e) |
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SIA446DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 7.7A PPAK SC70 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 150V 7.7A PPAK SC70 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Vgs (Max): ±20V Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 1554 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 150V 7.7A SC70-6L Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIA446 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V |
auf Bestellung 7997 Stücke Lieferzeit 21-28 Tag (e) |
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SIUD403ED-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 500MA PPAK 0806 Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 0806 Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® 0806 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) |
auf Bestellung 279 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5007 Stücke - Preis und Lieferfrist anzeigen
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DG9411EDL-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SC70 Channel Capacitance (CS(off), CD(off)): 7pF Charge Injection: 1pC Switch Time (Ton, Toff) (Max): 30ns, 24ns Voltage - Supply, Single (V+): 1.8V ~ 5.5V Channel-to-Channel Matching (ΔRon): 200mOhm On-State Resistance (Max): 8Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Crosstalk: -77dB @ 1MHz |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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IRFZ44STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIP32408DNP-T1-GE4 |
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Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.1V ~ 5.5V Part Status: Active Fault Protection: Reverse Current Supplier Device Package: 4-TDFN (1.2x1.6) Ratio - Input:Output: 1:1 Current - Output (Max): 3.5A Input Type: Non-Inverting Rds On (Typ): 44mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 125°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 4-UFDFN Exposed Pad Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 16474 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
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SIA928DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V POWERPAK SC70-6 Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 2.2V @ 250µA FET Feature: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 7.8W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1515 Stücke - Preis und Lieferfrist anzeigen
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SIP32409DNP-T1-GE4 |
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Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Switch Type: General Purpose Part Status: Active Packaging: Cut Tape (CT) Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Rds On (Typ): 44mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-TDFN (1.2x1.6) Package / Case: 4-UFDFN Exposed Pad Base Part Number: SIP324 |
auf Bestellung 4799 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SIP32102DB-T1-GE1 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP Current - Output (Max): 7A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.3V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 6.5mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 12-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 12-WCSP (1.71x1.31) Ratio - Input:Output: 1:1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIC781CD-T1-GE3 |
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Vishay Siliconix |
Description: IC BUCK ADJ 50A 40MLP Supplier Device Package: PowerPAK® MLP66-40 Package / Case: PowerPAK® MLP66-40 Mounting Type: Surface Mount Fault Protection: Over Temperature, Shoot-Through, UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 16V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 50A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 75 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6075 Stücke - Preis und Lieferfrist anzeigen
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SIC620CD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 60A PPAK MLP55-31L Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 60A PPAK MLP55-31L Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L |
auf Bestellung 5756 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 60A PPAK MLP55-31L Supplier Device Package: PowerPAK® MLP55-31L Package / Case: PowerPAK® MLP55-31L Mounting Type: Surface Mount Fault Protection: Over Temperature, Shoot-Through, UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 60A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 2306 Stücke Lieferzeit 21-28 Tag (e) |
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SIC620ACD-T1-GE3 |
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Vishay Siliconix |
Description: IC CTLR STAGE 60A PPAK MLP55-31L Packaging: Tape & Reel (TR) Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: IC CTLR STAGE 60A PPAK MLP55-31L Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: PowerPAK® MLP55-31L Voltage - Load: 4.5V ~ 18V Technology: Power MOSFET Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: PowerPAK® MLP55-31L Features: Bootstrap Circuit, Diode Emulation, Status Flag |
auf Bestellung 2591 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC CTLR STAGE 60A PPAK MLP55-31L Supplier Device Package: PowerPAK® MLP55-31L Package / Case: PowerPAK® MLP55-31L Mounting Type: Surface Mount Fault Protection: Over Temperature, Shoot-Through, UVLO Features: Bootstrap Circuit, Diode Emulation, Status Flag Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Load: 4.5V ~ 18V Voltage - Supply: 4.5V ~ 5.5V Current - Output / Channel: 60A Technology: Power MOSFET Load Type: Inductive Interface: PWM Applications: Synchronous Buck Converters Output Configuration: Half Bridge |
auf Bestellung 2530 Stücke Lieferzeit 21-28 Tag (e) |
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SI4501BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 8SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.5W, 3.1W Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12A, 8A Manufacturer: Vishay Siliconix Drain to Source Voltage (Vdss): 30V, 8V FET Feature: Logic Level Gate FET Type: N and P-Channel, Common Drain Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI4501 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3315 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 8SOIC Base Part Number: SI4501 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.5W, 3.1W Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12A, 8A Drain to Source Voltage (Vdss): 30V, 8V FET Feature: Logic Level Gate FET Type: N and P-Channel, Common Drain Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 1719 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3315 Stücke - Preis und Lieferfrist anzeigen
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SI3993CDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 2.9A 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI3993 Supplier Device Package: 6-TSOP |
auf Bestellung 14747 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14747 Stücke - Preis und Lieferfrist anzeigen
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| SIP32468DB-T2-GE1 |
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Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-WLCSP (0.76x0.76)
Package / Case: 4-UFBGA, WLCSP
Base Part Number: SIP324
auf Bestellung 3000 Stücke Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-WLCSP (0.76x0.76)
Package / Case: 4-UFBGA, WLCSP
Base Part Number: SIP324
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIP32467DB-T2-GE1 |
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Hersteller: Vishay Siliconix
Description: LOAD SWITCH 4WCSP
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: LOAD SWITCH 4WCSP
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
| SIP32467DB-T2-GE1 |
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Hersteller: Vishay Siliconix
Description: LOAD SWITCH 4WCSP
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)
auf Bestellung 75 Stücke Description: LOAD SWITCH 4WCSP
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)
Lieferzeit 21-28 Tag (e)
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
| SIP32467DB-T2-GE1 |
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Hersteller: Vishay Siliconix
Description: LOAD SWITCH 4WCSP
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)
auf Bestellung 75 Stücke Description: LOAD SWITCH 4WCSP
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (0.76x0.76)
Lieferzeit 21-28 Tag (e)
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
| SIP12108DB |
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Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 5A
Regulator Topology: Buck
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 5A
Voltage - Output: 1.8V
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Utilized IC / Part: SiP12108
Supplied Contents: Board
Board Type: Fully Populated
auf Bestellung 2 Stücke Description: EVAL BOARD BUCK REG ADJ 5A
Regulator Topology: Buck
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 5A
Voltage - Output: 1.8V
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Utilized IC / Part: SiP12108
Supplied Contents: Board
Board Type: Fully Populated
Lieferzeit 21-28 Tag (e)
| SIC413DB |
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Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG 26V 4A
Utilized IC / Part: SiC413
Supplied Contents: Board
Board Type: Fully Populated
Frequency - Switching: 500kHz
Regulator Topology: Buck
Voltage - Input: 4.75 V ~ 26 V
Current - Output: 4A
Voltage - Output: 3.3V
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: EVAL BOARD BUCK REG 26V 4A
Utilized IC / Part: SiC413
Supplied Contents: Board
Board Type: Fully Populated
Frequency - Switching: 500kHz
Regulator Topology: Buck
Voltage - Input: 4.75 V ~ 26 V
Current - Output: 4A
Voltage - Output: 3.3V
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
auf Bestellung 87520 Stücke - Preis und Lieferfrist anzeigen
| SIC401DB |
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Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 15A
Packaging: Box
Voltage - Input: 3V ~ 17V
Current - Output: 15A, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC401
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 2, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke Description: EVAL BOARD BUCK REG ADJ 15A
Packaging: Box
Voltage - Input: 3V ~ 17V
Current - Output: 15A, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC401
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 2, Non-Isolated
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
| SIC402DB |
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Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 10A
Packaging: Box
Voltage - Input: 3V ~ 28V
Current - Output: 10A, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC402
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 2, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke Description: EVAL BOARD BUCK REG ADJ 10A
Packaging: Box
Voltage - Input: 3V ~ 28V
Current - Output: 10A, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC402
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 2, Non-Isolated
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SIC403DB |
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Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 6A
Voltage - Input: 3V ~ 28V
Current - Output: 6A, 200mA
Outputs and Type: 2, Non-Isolated
Utilized IC / Part: SiC403
Supplied Contents: Board(s)
Board Type: Fully Populated
Regulator Topology: Buck
Main Purpose: DC/DC, Step Down with LDO
Part Status: Active
auf Bestellung 1 Stücke Description: EVAL BOARD BUCK REG ADJ 6A
Voltage - Input: 3V ~ 28V
Current - Output: 6A, 200mA
Outputs and Type: 2, Non-Isolated
Utilized IC / Part: SiC403
Supplied Contents: Board(s)
Board Type: Fully Populated
Regulator Topology: Buck
Main Purpose: DC/DC, Step Down with LDO
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SI9112DY-E3 |
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Hersteller: Vishay Siliconix
Description: IC REG CTRLR MULT TOP 14SOIC
Output Phases: 1
Control Features: Enable, Reset
Synchronous Rectifier: No
Supplier Device Package: 14-SOIC
Voltage - Supply (Vcc/Vdd): 9V ~ 13.5V
Topology: Cuk, Flyback, Forward Converter, Push-Pull
Frequency - Switching: 40kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG CTRLR MULT TOP 14SOIC
Output Phases: 1
Control Features: Enable, Reset
Synchronous Rectifier: No
Supplier Device Package: 14-SOIC
Voltage - Supply (Vcc/Vdd): 9V ~ 13.5V
Topology: Cuk, Flyback, Forward Converter, Push-Pull
Frequency - Switching: 40kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
| SIRA16DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V D-S PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA16
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30V D-S PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA16
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
| SQ2319ES-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A TO-236
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 4.6A TO-236
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
| SI7121ADN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 12A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3991 Stücke - Preis und Lieferfrist anzeigen
| SI4403CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 13.4A 8SO
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
auf Bestellung 5802 Stücke - Preis und Lieferfrist anzeigen
| SQM50P03-07_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL 30V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 282 Stücke - Preis und Lieferfrist anzeigen
| SQW61N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 62A TO247AD
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 344nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7379pF @ 100V
Power Dissipation (Max): 625W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Base Part Number: SQW61
auf Bestellung 478 Stücke Description: MOSFET N-CH 650V 62A TO247AD
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 344nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7379pF @ 100V
Power Dissipation (Max): 625W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Base Part Number: SQW61
Lieferzeit 21-28 Tag (e)
| SI2324DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 2.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1212 Stücke - Preis und Lieferfrist anzeigen
| SI2333CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
auf Bestellung 39601 Stücke Description: MOSFET P-CH 12V 7.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 24071 Stücke - Preis und Lieferfrist anzeigen
| SIHP125N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO220AB
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHP125
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 975 Stücke Description: MOSFET N-CH 600V 25A TO220AB
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHP125
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SIP32101DB-T1-GE1 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Rds On (Typ): 6.5mOhm
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIP32101
Manufacturer: Vishay Siliconix
Package / Case: 12-UFBGA, CSPBGA
auf Bestellung 3000 Stücke Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Rds On (Typ): 6.5mOhm
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIP32101
Manufacturer: Vishay Siliconix
Package / Case: 12-UFBGA, CSPBGA
Lieferzeit 21-28 Tag (e)
auf Bestellung 13881 Stücke - Preis und Lieferfrist anzeigen
| SIP32101DB-T1-GE1 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Rds On (Typ): 6.5mOhm
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIP32101
Manufacturer: Vishay Siliconix
Package / Case: 12-UFBGA, CSPBGA
auf Bestellung 4450 Stücke Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Rds On (Typ): 6.5mOhm
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIP32101
Manufacturer: Vishay Siliconix
Package / Case: 12-UFBGA, CSPBGA
Lieferzeit 21-28 Tag (e)
auf Bestellung 12431 Stücke - Preis und Lieferfrist anzeigen
| SIP4282ADNP3-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Base Part Number: SIP4282
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC PWR SWITCH P-CHAN 1:1 4TDFN
Base Part Number: SIP4282
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
| SIP4282DVP3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Base Part Number: SIP4282
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: UVLO
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 48 Stücke Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Base Part Number: SIP4282
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: UVLO
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SIP4282DVP3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC LOAD SW CTRL SLEW RATE PPAK
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: UVLO
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
auf Bestellung 50 Stücke Description: IC LOAD SW CTRL SLEW RATE PPAK
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: UVLO
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Lieferzeit 21-28 Tag (e)
auf Bestellung 48 Stücke - Preis und Lieferfrist anzeigen
| SIP4282ADVP2-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC LOAD SW CTRL SLEW RATE PPAK
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC LOAD SW CTRL SLEW RATE PPAK
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
| SIP4282ADVP3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIP4282
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
auf Bestellung 1598 Stücke Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIP4282
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SIP4282ADVP3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC LOAD SW CTRL SLEW RATE PPAK
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
auf Bestellung 50 Stücke Description: IC LOAD SW CTRL SLEW RATE PPAK
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 350mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
Lieferzeit 21-28 Tag (e)
auf Bestellung 1598 Stücke - Preis und Lieferfrist anzeigen
| SIP4282ADNP2-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC LOAD SW CTRL SLEW RATE 4TDFN
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
auf Bestellung 10 Stücke Description: IC LOAD SW CTRL SLEW RATE 4TDFN
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
| SIP4282ADNP2-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC LOAD SW CTRL SLEW RATE 4TDFN
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
auf Bestellung 10 Stücke Description: IC LOAD SW CTRL SLEW RATE 4TDFN
Switch Type: General Purpose
Number of Outputs: 1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
| SIP4282DNP3-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Part Status: Active
Fault Protection: UVLO
Supplier Device Package: 4-TDFN (1.2x1.6)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFDFN Exposed Pad
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 8925 Stücke Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Part Status: Active
Fault Protection: UVLO
Supplier Device Package: 4-TDFN (1.2x1.6)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFDFN Exposed Pad
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6010 Stücke - Preis und Lieferfrist anzeigen
|
| SIP4282DNP3-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC LOAD SW CTRL SLEW RATE 4TDFN
Supplier Device Package: 4-TDFN (1.2x1.6)
Package / Case: 4-UFDFN Exposed Pad
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: UVLO
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
auf Bestellung 10 Stücke Description: IC LOAD SW CTRL SLEW RATE 4TDFN
Supplier Device Package: 4-TDFN (1.2x1.6)
Package / Case: 4-UFDFN Exposed Pad
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: UVLO
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Number of Outputs: 1
Switch Type: General Purpose
Lieferzeit 21-28 Tag (e)
auf Bestellung 14925 Stücke - Preis und Lieferfrist anzeigen
| SIZ914DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A PWRPAIR
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 16A PWRPAIR
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
auf Bestellung 5980 Stücke - Preis und Lieferfrist anzeigen
| SIZ914DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A PWRPAIR
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2990 Stücke Description: MOSFET 2N-CH 30V 16A PWRPAIR
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2990 Stücke - Preis und Lieferfrist anzeigen
| SIZ914DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A PWRPAIR
Supplier Device Package: 8-PowerPair®
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
auf Bestellung 2990 Stücke Description: MOSFET 2N-CH 30V 16A PWRPAIR
Supplier Device Package: 8-PowerPair®
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Lieferzeit 21-28 Tag (e)
auf Bestellung 2990 Stücke - Preis und Lieferfrist anzeigen
| SIA936EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC-70
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 4.5A SC-70
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
| SIA923AEDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 4.5A SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 4087 Stücke - Preis und Lieferfrist anzeigen
| SIA923AEDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6L
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
auf Bestellung 4087 Stücke Description: MOSFET 2P-CH 20V 4.5A SC70-6L
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Lieferzeit 21-28 Tag (e)
| SIA537EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V/20V SC-70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke Description: MOSFET N/P-CH 12V/20V SC-70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 26630 Stücke - Preis und Lieferfrist anzeigen
| SIA537EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V/20V SC-70-6L
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
auf Bestellung 11630 Stücke Description: MOSFET N/P-CH 12V/20V SC-70-6L
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Lieferzeit 21-28 Tag (e)
auf Bestellung 24000 Stücke - Preis und Lieferfrist anzeigen
| SIA537EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V/20V SC-70-6L
Base Part Number: SIA537
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15000 Stücke Description: MOSFET N/P-CH 12V/20V SC-70-6L
Base Part Number: SIA537
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 20630 Stücke - Preis und Lieferfrist anzeigen
| SISF00DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V POWERPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET DUAL N-CH 30V POWERPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 4855 Stücke - Preis und Lieferfrist anzeigen
| SISB46DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V POWERPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 11.71mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V POWERPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 11.71mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
| SI9112DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC REG CTRLR FLYBK CUK CM 14SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C
Isolated: No
Cuk: Yes
Divider: No
Doubler: No
Inverting: No
Flyback: Yes
Buck: No
Voltage - Supply: 9 V ~ 13.5 V
Duty Cycle: 50%
Frequency - Max: 3MHz
Number of Outputs: 1
PWM Type: Current Mode
Boost: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG CTRLR FLYBK CUK CM 14SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C
Isolated: No
Cuk: Yes
Divider: No
Doubler: No
Inverting: No
Flyback: Yes
Buck: No
Voltage - Supply: 9 V ~ 13.5 V
Duty Cycle: 50%
Frequency - Max: 3MHz
Number of Outputs: 1
PWM Type: Current Mode
Boost: No
| SIP12109DMP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 4A 16MLP
Synchronous Rectifier: Yes
Frequency - Switching: 400kHz ~ 1.5MHz
Current - Output: 4A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIP12109
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG BUCK ADJUSTABLE 4A 16MLP
Synchronous Rectifier: Yes
Frequency - Switching: 400kHz ~ 1.5MHz
Current - Output: 4A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIP12109
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 1047 Stücke - Preis und Lieferfrist anzeigen
| SIP12109DMP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 4A 16MLP
Base Part Number: SIP12109
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Synchronous Rectifier: Yes
Frequency - Switching: 400kHz ~ 1.5MHz
Current - Output: 4A
auf Bestellung 19 Stücke Description: IC REG BUCK ADJUSTABLE 4A 16MLP
Base Part Number: SIP12109
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Synchronous Rectifier: Yes
Frequency - Switching: 400kHz ~ 1.5MHz
Current - Output: 4A
Lieferzeit 21-28 Tag (e)
auf Bestellung 1028 Stücke - Preis und Lieferfrist anzeigen
| SISA18ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A PPAK1212-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 38.3A PPAK1212-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
FET Type: N-Channel
| SISA12ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SISA12
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 3175 Stücke Description: MOSFET N-CH 30V 25A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SISA12
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIR330DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
| SUD42N03-3M9P-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 42A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 42A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 4540 Stücke - Preis und Lieferfrist anzeigen
| SUD42N03-3M9P-GE3 |
|
,%20SC-63.jpg "SUD42N03-3M9P-GE3")
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 42A TO252
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
auf Bestellung 4540 Stücke Description: MOSFET N-CH 30V 42A TO252
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Lieferzeit 21-28 Tag (e)
| SIR818DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
| SIHA12N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 12A TO220
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
| SIHA15N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
auf Bestellung 11 Stücke Description: MOSFET N-CH 600V 15A TO220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Lieferzeit 21-28 Tag (e)
|
| SIHA22N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 951 Stücke Description: MOSFET N-CH 600V 21A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 1.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| 2N7002-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 115MA TO236
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 11390 Stücke - Preis und Lieferfrist anzeigen
| SIRA34DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2311 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 2311 Stücke - Preis und Lieferfrist anzeigen
| SIRA34DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
auf Bestellung 2311 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2311 Stücke - Preis und Lieferfrist anzeigen
| SISA16DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISA16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 16A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISA16
auf Bestellung 5975 Stücke - Preis und Lieferfrist anzeigen
| SISA16DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V D-S PPAK 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 5975 Stücke Description: MOSFET N-CH 30V D-S PPAK 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
| SIRA16DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V D-S PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA16
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30V D-S PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA16
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
| SIRA16DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V D-S PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Power - Max: 3.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30V D-S PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Power - Max: 3.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
| SQ2319ES-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A TO-236
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 4.6A TO-236
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
| SI7157DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 13112 Stücke Description: MOSFET P-CH 20V 60A PPAK SO-8
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 21446 Stücke - Preis und Lieferfrist anzeigen
| SUD06N10-225L-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A DPAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 6.5A DPAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| SUP90N06-6M0P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 3080 Stücke - Preis und Lieferfrist anzeigen
| SI3421DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 7078 Stücke - Preis und Lieferfrist anzeigen
| SI3421DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
auf Bestellung 268 Stücke Description: MOSFET P-CH 30V 8A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6810 Stücke - Preis und Lieferfrist anzeigen
| SI7121ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 389 Stücke Description: MOSFET P-CH 30V 12A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3602 Stücke - Preis und Lieferfrist anzeigen
| SI8851EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: Power Micro Foot® (2.4x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 30-XFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V PWR MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: Power Micro Foot® (2.4x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 30-XFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 5770 Stücke - Preis und Lieferfrist anzeigen
| SI8851EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.7A MICRO FOOT
Supplier Device Package: Power Micro Foot®
Package / Case: 30-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 660mW
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 8 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 5770 Stücke Description: MOSFET P-CH 20V 7.7A MICRO FOOT
Supplier Device Package: Power Micro Foot®
Package / Case: 30-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 660mW
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 8 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 7.7A PPAK SC70
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 9551 Stücke - Preis und Lieferfrist anzeigen
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 1554 Stücke Description: MOSFET N-CH 150V 7.7A PPAK SC70
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 7997 Stücke - Preis und Lieferfrist anzeigen
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A SC70-6L
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA446
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
auf Bestellung 7997 Stücke Description: MOSFET N-CH 150V 7.7A SC70-6L
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA446
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Lieferzeit 21-28 Tag (e)
auf Bestellung 1554 Stücke - Preis und Lieferfrist anzeigen
| SIUD403ED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 0806
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 0806
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
auf Bestellung 279 Stücke Description: MOSFET P-CH 20V 500MA PPAK 0806
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 0806
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 0806
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5007 Stücke - Preis und Lieferfrist anzeigen
|
| DG9411EDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70
Channel Capacitance (CS(off), CD(off)): 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 200mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
auf Bestellung 3000 Stücke Description: IC ANALOG SWITCH SC70
Channel Capacitance (CS(off), CD(off)): 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 200mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| IRFZ44STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| SIP32408DNP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: 4-TDFN (1.2x1.6)
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Input Type: Non-Inverting
Rds On (Typ): 44mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 4-UFDFN Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 16474 Stücke Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: 4-TDFN (1.2x1.6)
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Input Type: Non-Inverting
Rds On (Typ): 44mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 4-UFDFN Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
|
| SIA928DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 7.8W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V POWERPAK SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 7.8W
auf Bestellung 1515 Stücke - Preis und Lieferfrist anzeigen
| SIP32409DNP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-TDFN (1.2x1.6)
Package / Case: 4-UFDFN Exposed Pad
Base Part Number: SIP324
auf Bestellung 4799 Stücke Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-TDFN (1.2x1.6)
Package / Case: 4-UFDFN Exposed Pad
Base Part Number: SIP324
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIP32102DB-T1-GE1 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 6.5mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 12-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 12-WCSP (1.71x1.31)
Ratio - Input:Output: 1:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC PWR SWITCH P-CHAN 1:1 12WCSP
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 6.5mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 12-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 12-WCSP (1.71x1.31)
Ratio - Input:Output: 1:1
| SIC781CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 50A 40MLP
Supplier Device Package: PowerPAK® MLP66-40
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 16V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 75 Stücke Description: IC BUCK ADJ 50A 40MLP
Supplier Device Package: PowerPAK® MLP66-40
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 16V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 6075 Stücke - Preis und Lieferfrist anzeigen
| SIC620CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A PPAK MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: IC CTLR STAGE 60A PPAK MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8062 Stücke - Preis und Lieferfrist anzeigen
|
| SIC620CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A PPAK MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
auf Bestellung 5756 Stücke Description: IC CTLR STAGE 60A PPAK MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Lieferzeit 21-28 Tag (e)
auf Bestellung 5306 Stücke - Preis und Lieferfrist anzeigen
|
| SIC620CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A PPAK MLP55-31L
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 2306 Stücke Description: IC CTLR STAGE 60A PPAK MLP55-31L
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 8756 Stücke - Preis und Lieferfrist anzeigen
| SIC620ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A PPAK MLP55-31L
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC CTLR STAGE 60A PPAK MLP55-31L
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
auf Bestellung 5121 Stücke - Preis und Lieferfrist anzeigen
| SIC620ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A PPAK MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
auf Bestellung 2591 Stücke Description: IC CTLR STAGE 60A PPAK MLP55-31L
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Lieferzeit 21-28 Tag (e)
auf Bestellung 2530 Stücke - Preis und Lieferfrist anzeigen
|
| SIC620ACD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 60A PPAK MLP55-31L
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
auf Bestellung 2530 Stücke Description: IC CTLR STAGE 60A PPAK MLP55-31L
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 60A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Lieferzeit 21-28 Tag (e)
auf Bestellung 2591 Stücke - Preis und Lieferfrist anzeigen
| SI4501BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V/8V 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 5034 Stücke - Preis und Lieferfrist anzeigen
| SI4501BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1719 Stücke Description: MOSFET N/P-CH 30V/8V 8SOIC
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 3315 Stücke - Preis und Lieferfrist anzeigen
| SI3993CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.9A 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3993
Supplier Device Package: 6-TSOP
auf Bestellung 14747 Stücke Description: MOSFET 2P-CH 30V 2.9A 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3993
Supplier Device Package: 6-TSOP
Lieferzeit 21-28 Tag (e)
auf Bestellung 14747 Stücke - Preis und Lieferfrist anzeigen
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