Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SIZ730DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR Base Part Number: SIZ730 Supplier Device Package: 6-PowerPair™ Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 27W, 48W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Cut Tape (CT) |
auf Bestellung 1797 Stücke Lieferzeit 21-28 Tag (e) |
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SIZ790DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Supplier Device Package: 6-PowerPair™ Base Part Number: SIZ790 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6544BDQ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11556 Stücke - Preis und Lieferfrist anzeigen
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SI4226DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8-SOIC Drain to Source Voltage (Vdss): 25V FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.2W Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI4226DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: 8-SO Power - Max: 3.2W Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 25V FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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SIZ700DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 16A PPAK 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.36W, 2.8W Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: 6-PowerPair™ Supplier Device Package: 6-PowerPair™ |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SIZ902DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Base Part Number: SIZ902 Supplier Device Package: 8-PowerPair® (6x5) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W, 66W Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Base Part Number: SIZ902 Supplier Device Package: 8-PowerPair® (6x5) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W, 66W Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 2077 Stücke Lieferzeit 21-28 Tag (e) |
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SIZ728DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Tape & Reel (TR) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 7.7mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Supplier Device Package: 6-PowerPair™ Base Part Number: SIZ728 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIZ720DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 16A POWERPAIR Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Packaging: Tape & Reel (TR) FET Type: 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-PowerPair™ Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI9936BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.5A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4539ADY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4.4A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel Base Part Number: SI4539 Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SQJ962EP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 25W Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SI7214DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.6A 1212-8 Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7218DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 24A 1212-8 Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 23W Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SQ4920EY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 4.4W Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4544DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8-SOIC Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel, Common Drain Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.4W Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 173000 Stücke - Preis und Lieferfrist anzeigen
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SI4544DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel, Common Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.4W Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4569DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 40V 7.6A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W, 3.2W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4814BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10A 8SOIC Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 3.3W, 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4500 Stücke - Preis und Lieferfrist anzeigen
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SI4814BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10A 8SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 3.3W, 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4916DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W, 3.5W Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4922BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1769 Stücke - Preis und Lieferfrist anzeigen
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SI6928DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4A 8-TSSOP Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4925BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.3A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W FET Type: 2 P-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4943CDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 8A 8-SOIC Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 179 Stücke - Preis und Lieferfrist anzeigen
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SI4963BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.9A 8SOIC Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: SI4963 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6975DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 5mA (Min) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7842DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.3A PPAK SO-8 FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIZ916DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Supplier Device Package: 8-PowerPair® (6x5) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 22.7W, 100W Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4388DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10.7A 8-SOIC Base Part Number: SI4388 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W, 3.5W Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7530DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 60V 3A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Power - Max: 1.4W, 1.5W Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SQJ941EP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 8A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 55W Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4920DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7922DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A 1212-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 100V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI7922 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V |
auf Bestellung 60000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A 1212-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 100V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI7922 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V |
auf Bestellung 65827 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 100V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
auf Bestellung 16500 Stücke Lieferzeit 21-28 Tag (e) |
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SI4330DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.6A 8-SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: SI4330 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4808DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.7A 8SOIC FET Type: 2 N-Channel (Dual) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 160000 Stücke - Preis und Lieferfrist anzeigen
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SI4808DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.7A 8SOIC Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5504DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.9A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W FET Type: N and P-Channel Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5903DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.1A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.1A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SQJ960EP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 34W Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4936ADY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: SI4936 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4943BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7905DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 40V 6A 1212-8 Drain to Source Voltage (Vdss): 40V FET Type: 2 P-Channel (Dual) Power - Max: 20.8W Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6A Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7540DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Base Part Number: SI7540 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W |
auf Bestellung 11391 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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SI7872DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8 Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99518 Stücke - Preis und Lieferfrist anzeigen
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SI4622DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W, 3.1W Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 147520 Stücke - Preis und Lieferfrist anzeigen
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SI4966DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 8SOIC Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7997DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 60A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Base Part Number: SI7997 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
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SQ4936EY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 7A 8SOIC Supplier Device Package: 8-SOIC N Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 3.3W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4563DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 40V 8A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.25W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SQJ970EP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 2165pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
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SI4618DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SO Power - Max: 1.98W, 4.16W Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4965DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 8V 8SOIC Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V Drain to Source Voltage (Vdss): 8V FET Feature: Logic Level Gate Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75580 Stücke - Preis und Lieferfrist anzeigen
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SI4965DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 8V 8SOIC Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V Drain to Source Voltage (Vdss): 8V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4967DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 8SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 157520 Stücke - Preis und Lieferfrist anzeigen
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SI4967DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 8SOIC Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7940DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8 FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62668 Stücke - Preis und Lieferfrist anzeigen
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SQJ844EP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 24 mOhm @ 10.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4816DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4933DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 500µA Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.4A Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4816DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90208 Stücke - Preis und Lieferfrist anzeigen
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SI7212DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.9A 1212-8 Manufacturer: Vishay Siliconix Supplier Device Package: PowerPAK® 1212-8 Dual Base Part Number: SI7212 Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8458 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.9A 1212-8 Base Part Number: SI7212 Operating Temperature: -55°C ~ 150°C (TJ) Manufacturer: Vishay Siliconix Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2496 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8458 Stücke - Preis und Lieferfrist anzeigen
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SI7964DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI6975DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 5mA (Min) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A Drain to Source Voltage (Vdss): 12V Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
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SI4973DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.8A 8-SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A Drain to Source Voltage (Vdss): 30V FET Type: 2 P-Channel (Dual) Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 79643 Stücke - Preis und Lieferfrist anzeigen
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SI4973DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.8A 8SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4944DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V Current - Continuous Drain (Id) @ 25°C: 9.3A Drain to Source Voltage (Vdss): 30V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SQJ964EP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SOIC Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Power - Max: 35W Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 28 mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4923DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 105214 Stücke - Preis und Lieferfrist anzeigen
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SI4923DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W FET Type: 2 P-Channel (Dual) Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4942DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8-SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4542DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4562DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4562DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V Drain to Source Voltage (Vdss): 20V Supplier Device Package: 8-SO FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 69080 Stücke - Preis und Lieferfrist anzeigen
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| SIZ730DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Base Part Number: SIZ730
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 1797 Stücke Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Base Part Number: SIZ730
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SIZ790DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ790
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ790
| SI6544BDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
auf Bestellung 11556 Stücke - Preis und Lieferfrist anzeigen
| SI4226DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 25V 8A 8-SOIC
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SI4226DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 25V 8A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
| SIZ700DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.36W, 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 16A PPAK 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.36W, 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIZ902DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2077 Stücke - Preis und Lieferfrist anzeigen
| SIZ902DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2077 Stücke Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
| SIZ728DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ728
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 25V 16A 6-POWERPAIR
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ728
| SIZ720DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A POWERPAIR
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
FET Type: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 16A POWERPAIR
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
FET Type: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active
| SI9936BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 4.5A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
| SI4539ADY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4.4A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Base Part Number: SI4539
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 4.4A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Base Part Number: SI4539
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SQJ962EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 8A 8SO
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
| SI7214DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 4.6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
| SI7218DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 24A 1212-8
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
| SQ4920EY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A 8SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| SI4544DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
auf Bestellung 173000 Stücke - Preis und Lieferfrist anzeigen
| SI4544DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
| SI4569DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.2W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 40V 7.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.2W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
| SI4814BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8SOIC
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 10A 8SOIC
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 4500 Stücke - Preis und Lieferfrist anzeigen
| SI4814BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 10A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
| SI4916DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 10A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
| SI4922BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
auf Bestellung 1769 Stücke - Preis und Lieferfrist anzeigen
| SI6928DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8-TSSOP
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 4A 8-TSSOP
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SI4925BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
| SI4943CDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 179 Stücke - Preis und Lieferfrist anzeigen
| SI4963BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4963
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4963
| SI6975DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 4.3A 8TSSOP
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SI7842DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 6.3A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
| SIZ916DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 16A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI4388DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
Base Part Number: SI4388
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 10.7A 8-SOIC
Base Part Number: SI4388
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI7530DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 3A 8-SOIC
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.4W, 1.5W
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 60V 3A 8-SOIC
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.4W, 1.5W
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
| SQJ941EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 55W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 55W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI4920DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| SI7922DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
auf Bestellung 60000 Stücke Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 82327 Stücke - Preis und Lieferfrist anzeigen
| SI7922DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
auf Bestellung 65827 Stücke Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 76500 Stücke - Preis und Lieferfrist anzeigen
| SI7922DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 16500 Stücke Description: MOSFET 2N-CH 100V 1.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 125827 Stücke - Preis und Lieferfrist anzeigen
| SI4330DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4330
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4330
| SI4808DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8SOIC
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.7A 8SOIC
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
auf Bestellung 160000 Stücke - Preis und Lieferfrist anzeigen
| SI4808DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8SOIC
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.7A 8SOIC
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Supplier Device Package: 8-SO
| SI5504DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 2.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
| SI5903DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 2.1A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
| SQJ960EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 8A 8SO
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
| SI4936ADY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4936
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 4.4A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4936
| SI4943BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 6.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
| SI7905DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 6A 1212-8
Drain to Source Voltage (Vdss): 40V
FET Type: 2 P-Channel (Dual)
Power - Max: 20.8W
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 40V 6A 1212-8
Drain to Source Voltage (Vdss): 40V
FET Type: 2 P-Channel (Dual)
Power - Max: 20.8W
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SI7540DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7540
auf Bestellung 23391 Stücke - Preis und Lieferfrist anzeigen
| SI7540DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
auf Bestellung 11391 Stücke Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
| SI7872DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 99518 Stücke - Preis und Lieferfrist anzeigen
| SI4622DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 147520 Stücke - Preis und Lieferfrist anzeigen
| SI4966DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 8SOIC
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
| SI7997DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7997
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7997
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
| SQ4936EY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7A 8SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 7A 8SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
| SI4563DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 40V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
| SQJ970EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2165pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2165pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
| SI4618DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A 8SO
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SI4965DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
FET Type: 2 P-Channel (Dual)
auf Bestellung 75580 Stücke - Preis und Lieferfrist anzeigen
| SI4965DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 8V 8SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
| SI4967DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
auf Bestellung 157520 Stücke - Preis und Lieferfrist anzeigen
| SI4967DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 8SOIC
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
| SI7940DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 12V 7.6A PPAK SO-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 62668 Stücke - Preis und Lieferfrist anzeigen
| SQJ844EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A PPAK 8SOIC
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
| SI4816DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
| SI4933DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 500µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 7.4A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 500µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
| SI4816DY-T1-E3 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Packaging: Tape & Reel (TR)
auf Bestellung 90208 Stücke - Preis und Lieferfrist anzeigen
| SI7212DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A 1212-8
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7212
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 4.9A 1212-8
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7212
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 10954 Stücke - Preis und Lieferfrist anzeigen
| SI7212DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A 1212-8
Base Part Number: SI7212
Operating Temperature: -55°C ~ 150°C (TJ)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2496 Stücke Description: MOSFET 2N-CH 30V 4.9A 1212-8
Base Part Number: SI7212
Operating Temperature: -55°C ~ 150°C (TJ)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8458 Stücke - Preis und Lieferfrist anzeigen
| SI7964DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 6.1A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SI6975DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 4.3A 8TSSOP
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
| SI4973DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 5.8A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 79643 Stücke - Preis und Lieferfrist anzeigen
| SI4973DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
| SI4944DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 9.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
| SQJ964EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 35W
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 35W
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
| SI4923DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 105214 Stücke - Preis und Lieferfrist anzeigen
| SI4923DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
| SI4942DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 5.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| SI4542DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI4562DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI4562DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-SO
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-SO
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 69080 Stücke - Preis und Lieferfrist anzeigen
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