Die Produkte vishay siliconix

Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]
Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
Preis
ohne MwSt
SIZ730DT-T1-GE3 SIZ730DT-T1-GE3 siz730dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Base Part Number: SIZ730
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 1797 Stücke
Lieferzeit 21-28 Tag (e)
SIZ790DT-T1-GE3 SIZ790DT-T1-GE3 siz790dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ790
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6544BDQ-T1-E3 SI6544BDQ-T1-E3 72244.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11556 Stücke - Preis und Lieferfrist anzeigen
SI4226DY-T1-GE3 SI4226DY-T1-GE3 si4226dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8-SOIC
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SI4226DY-T1-E3 SI4226DY-T1-E3 si4226dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
SIZ700DT-T1-GE3 SIZ700DT-T1-GE3 siz700dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.36W, 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIZ902DT-T1-GE3 SIZ902DT-T1-GE3 siz902dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2077 Stücke
Lieferzeit 21-28 Tag (e)
SIZ728DT-T1-GE3 SIZ728DT-T1-GE3 siz728dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ728
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ720DT-T1-GE3 SIZ720DT-T1-GE3 siz720dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 16A POWERPAIR
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
FET Type: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9936BDY-T1-GE3 SI9936BDY-T1-GE3 si9936bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4.5A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4539ADY-T1-GE3 SI4539ADY-T1-GE3 71131.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 4.4A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Base Part Number: SI4539
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ962EP-T1-GE3 sqj962ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 8A 8SO
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7214DN-T1-GE3 SI7214DN-T1-GE3 si7214dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4.6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7218DN-T1-GE3 SI7218DN-T1-GE3 si7218dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 24A 1212-8
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4920EY-T1-GE3 SQ4920EY-T1-GE3 sq4920ey.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4544DY-T1-E3 SI4544DY-T1-E3 70768.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 173000 Stücke - Preis und Lieferfrist anzeigen
SI4544DY-T1-GE3 SI4544DY-T1-GE3 70768.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4569DY-T1-GE3 SI4569DY-T1-GE3 73586.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.2W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4814BDY-T1-E3 SI4814BDY-T1-E3 si4814bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 10A 8SOIC
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4500 Stücke - Preis und Lieferfrist anzeigen
SI4814BDY-T1-GE3 SI4814BDY-T1-GE3 si4814bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 10A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4916DY-T1-GE3 SI4916DY-T1-GE3 si4916dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 10A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4922BDY-T1-GE3 SI4922BDY-T1-GE3 si4922bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1769 Stücke - Preis und Lieferfrist anzeigen
SI6928DQ-T1-GE3 SI6928DQ-T1-GE3 70663.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4A 8-TSSOP
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 72001.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4943CDY-T1-E3 SI4943CDY-T1-E3 si4943cd.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 179 Stücke - Preis und Lieferfrist anzeigen
SI4963BDY-T1-GE3 SI4963BDY-T1-GE3 72753.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4963
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6975DQ-T1-GE3 SI6975DQ-T1-GE3 71319.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7842DP-T1-GE3 SI7842DP-T1-GE3 71617.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.3A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ916DT-T1-GE3 SIZ916DT-T1-GE3 siz916dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 16A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4388DY-T1-GE3 SI4388DY-T1-GE3 si4388dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
Base Part Number: SI4388
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7530DP-T1-GE3 SI7530DP-T1-GE3 73249.pdf Vishay Siliconix Description: MOSFET N/P-CH 60V 3A 8-SOIC
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.4W, 1.5W
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ941EP-T1-GE3 SQJ941EP-T1-GE3 sqj941ep.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 55W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4920DY-T1-GE3 SI4920DY-T1-GE3 70667.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7922DN-T1-GE3 SI7922DN-T1-GE3 72031.pdf Vishay Siliconix Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
auf Bestellung 60000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
auf Bestellung 65827 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 100V 1.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 16500 Stücke
Lieferzeit 21-28 Tag (e)
SI4330DY-T1-GE3 SI4330DY-T1-GE3 si4330dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4330
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4808DY-T1-E3 SI4808DY-T1-E3 71157.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.7A 8SOIC
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 160000 Stücke - Preis und Lieferfrist anzeigen
SI4808DY-T1-GE3 SI4808DY-T1-GE3 71157.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.7A 8SOIC
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5504DC-T1-GE3 SI5504DC-T1-GE3 si5504dc.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 2.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5903DC-T1-GE3 SI5903DC-T1-GE3 71054.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.1A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ960EP-T1-GE3 SQJ960EP-T1-GE3 sqj960ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 8A 8SO
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4936ADY-T1-GE3 SI4936ADY-T1-GE3 si4936ad.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4.4A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4936
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4943BDY-T1-GE3 SI4943BDY-T1-GE3 73073.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7905DN-T1-E3 SI7905DN-T1-E3 si7905dn.pdf Vishay Siliconix Description: MOSFET 2P-CH 40V 6A 1212-8
Drain to Source Voltage (Vdss): 40V
FET Type: 2 P-Channel (Dual)
Power - Max: 20.8W
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7540DP-T1-E3 SI7540DP-T1-E3 si7540dp.pdf Vishay Siliconix Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
auf Bestellung 11391 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
SI7872DP-T1-E3 SI7872DP-T1-E3 si7872dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99518 Stücke - Preis und Lieferfrist anzeigen
SI4622DY-T1-E3 SI4622DY-T1-E3 si4622dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 147520 Stücke - Preis und Lieferfrist anzeigen
SI4966DY-T1-GE3 SI4966DY-T1-GE3 si4966dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 8SOIC
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7997DP-T1-GE3 SI7997DP-T1-GE3 si7997dp.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7997
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SQ4936EY-T1-GE3 SQ4936EY-T1-GE3 sq4936ey.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 7A 8SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4563DY-T1-GE3 SI4563DY-T1-GE3 si4563dy.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ970EP-T1-GE3 SQJ970EP-T1-GE3 sqj970ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2165pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
SI4618DY-T1-GE3 SI4618DY-T1-GE3 si4618dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SO
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4965DY-T1-E3 SI4965DY-T1-E3 70826.pdf Vishay Siliconix Description: MOSFET 2P-CH 8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75580 Stücke - Preis und Lieferfrist anzeigen
SI4965DY-T1-GE3 SI4965DY-T1-GE3 70826.pdf Vishay Siliconix Description: MOSFET 2P-CH 8V 8SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4967DY-T1-E3 SI4967DY-T1-E3 70813.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 157520 Stücke - Preis und Lieferfrist anzeigen
SI4967DY-T1-GE3 SI4967DY-T1-GE3 70813.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 8SOIC
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7940DP-T1-E3 SI7940DP-T1-E3 71845.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62668 Stücke - Preis und Lieferfrist anzeigen
SQJ844EP-T1-GE3 SQJ844EP-T1-GE3 sqj844ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4816DY-T1-GE3 SI4816DY-T1-GE3 71121.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4933DY-T1-GE3 SI4933DY-T1-GE3 71980.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 500µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4816DY-T1-E3 SI4816DY-T1-E3 71121.pdf техническая информация Vishay Siliconix Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90208 Stücke - Preis und Lieferfrist anzeigen
SI7212DN-T1-E3 SI7212DN-T1-E3 si7212dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4.9A 1212-8
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7212
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8458 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2N-CH 30V 4.9A 1212-8
Base Part Number: SI7212
Operating Temperature: -55°C ~ 150°C (TJ)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2496 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8458 Stücke - Preis und Lieferfrist anzeigen
SI7964DP-T1-GE3 SI7964DP-T1-GE3 73101.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SI6975DQ-T1-E3 SI6975DQ-T1-E3 71319.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI4973DY-T1-E3 SI4973DY-T1-E3 72164.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 5.8A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 79643 Stücke - Preis und Lieferfrist anzeigen
SI4973DY-T1-GE3 SI4973DY-T1-GE3 72164.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4944DY-T1-GE3 SI4944DY-T1-GE3 72512.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ964EP-T1-GE3 SQJ964EP-T1-GE3 sqj964ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 35W
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4923DY-T1-E3 SI4923DY-T1-E3 72069.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 105214 Stücke - Preis und Lieferfrist anzeigen
SI4923DY-T1-GE3 SI4923DY-T1-GE3 72069.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4942DY-T1-GE3 SI4942DY-T1-GE3 71887.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 5.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4542DY-T1-GE3 SI4542DY-T1-GE3 70666.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4562DY-T1-GE3 SI4562DY-T1-GE3 70717.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4562DY-T1-E3 SI4562DY-T1-E3 70717.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-SO
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 69080 Stücke - Preis und Lieferfrist anzeigen
SIZ730DT-T1-GE3 siz730dt.pdf
SIZ730DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Base Part Number: SIZ730
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 1797 Stücke
Lieferzeit 21-28 Tag (e)
SIZ790DT-T1-GE3 siz790dt.pdf
SIZ790DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ790
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6544BDQ-T1-E3 72244.pdf
SI6544BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11556 Stücke - Preis und Lieferfrist anzeigen
SI4226DY-T1-GE3 si4226dy.pdf
SI4226DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SI4226DY-T1-E3 si4226dy.pdf
SI4226DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
SIZ700DT-T1-GE3 siz700dt.pdf
SIZ700DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.36W, 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIZ902DT-T1-GE3 siz902dt.pdf
SIZ902DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2077 Stücke - Preis und Lieferfrist anzeigen
SIZ902DT-T1-GE3 siz902dt.pdf
SIZ902DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ902
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 66W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2077 Stücke
Lieferzeit 21-28 Tag (e)
SIZ728DT-T1-GE3 siz728dt.pdf
SIZ728DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ728
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ720DT-T1-GE3 siz720dt.pdf
SIZ720DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A POWERPAIR
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
FET Type: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9936BDY-T1-GE3 si9936bd.pdf
SI9936BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4539ADY-T1-GE3 71131.pdf
SI4539ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4.4A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Base Part Number: SI4539
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ962EP-T1-GE3 sqj962ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7214DN-T1-GE3 si7214dn.pdf
SI7214DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7218DN-T1-GE3 si7218dn.pdf
SI7218DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4920EY-T1-GE3 sq4920ey.pdf
SQ4920EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4544DY-T1-E3 70768.pdf
SI4544DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 173000 Stücke - Preis und Lieferfrist anzeigen
SI4544DY-T1-GE3 70768.pdf
SI4544DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4569DY-T1-GE3 73586.pdf
SI4569DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.2W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4814BDY-T1-E3 si4814bd.pdf
SI4814BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8SOIC
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4500 Stücke - Preis und Lieferfrist anzeigen
SI4814BDY-T1-GE3 si4814bd.pdf
SI4814BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4916DY-T1-GE3 si4916dy.pdf
SI4916DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4922BDY-T1-GE3 si4922bd.pdf
SI4922BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1769 Stücke - Preis und Lieferfrist anzeigen
SI6928DQ-T1-GE3 70663.pdf
SI6928DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8-TSSOP
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4925BDY-T1-GE3 72001.pdf
SI4925BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4943CDY-T1-E3 si4943cd.pdf
SI4943CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 179 Stücke - Preis und Lieferfrist anzeigen
SI4963BDY-T1-GE3 72753.pdf
SI4963BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4963
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6975DQ-T1-GE3 71319.pdf
SI6975DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7842DP-T1-GE3 71617.pdf
SI7842DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ916DT-T1-GE3 siz916dt.pdf
SIZ916DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22.7W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4388DY-T1-GE3 si4388dy.pdf
SI4388DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
Base Part Number: SI4388
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7530DP-T1-GE3 73249.pdf
SI7530DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 3A 8-SOIC
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.4W, 1.5W
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ941EP-T1-GE3 sqj941ep.pdf
SQJ941EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 55W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4920DY-T1-GE3 70667.pdf
SI4920DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7922DN-T1-GE3 72031.pdf
SI7922DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
auf Bestellung 60000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 82327 Stücke - Preis und Lieferfrist anzeigen
SI7922DN-T1-GE3 72031.pdf
SI7922DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
auf Bestellung 65827 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 76500 Stücke - Preis und Lieferfrist anzeigen
SI7922DN-T1-GE3 72031.pdf
SI7922DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 16500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 125827 Stücke - Preis und Lieferfrist anzeigen
SI4330DY-T1-GE3 si4330dy.pdf
SI4330DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4330
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4808DY-T1-E3 71157.pdf
SI4808DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8SOIC
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 160000 Stücke - Preis und Lieferfrist anzeigen
SI4808DY-T1-GE3 71157.pdf
SI4808DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8SOIC
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5504DC-T1-GE3 si5504dc.pdf
SI5504DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5903DC-T1-GE3 71054.pdf
SI5903DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ960EP-T1-GE3 sqj960ep.pdf
SQJ960EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4936ADY-T1-GE3 si4936ad.pdf
SI4936ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4936
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4943BDY-T1-GE3 73073.pdf
SI4943BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7905DN-T1-E3 si7905dn.pdf
SI7905DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 6A 1212-8
Drain to Source Voltage (Vdss): 40V
FET Type: 2 P-Channel (Dual)
Power - Max: 20.8W
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7540DP-T1-E3 si7540dp.pdf
SI7540DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23391 Stücke - Preis und Lieferfrist anzeigen
SI7540DP-T1-E3 si7540dp.pdf
SI7540DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
auf Bestellung 11391 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
SI7872DP-T1-E3 si7872dp.pdf
SI7872DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99518 Stücke - Preis und Lieferfrist anzeigen
SI4622DY-T1-E3 si4622dy.pdf
SI4622DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 147520 Stücke - Preis und Lieferfrist anzeigen
SI4966DY-T1-GE3 si4966dy.pdf
SI4966DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7997DP-T1-GE3 si7997dp.pdf
SI7997DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7997
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SQ4936EY-T1-GE3 sq4936ey.pdf
SQ4936EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7A 8SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4563DY-T1-GE3 si4563dy.pdf
SI4563DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ970EP-T1-GE3 sqj970ep.pdf
SQJ970EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2165pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
SI4618DY-T1-GE3 si4618dy.pdf
SI4618DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4965DY-T1-E3 70826.pdf
SI4965DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75580 Stücke - Preis und Lieferfrist anzeigen
SI4965DY-T1-GE3 70826.pdf
SI4965DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4967DY-T1-E3 70813.pdf
SI4967DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 157520 Stücke - Preis und Lieferfrist anzeigen
SI4967DY-T1-GE3 70813.pdf
SI4967DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7940DP-T1-E3 71845.pdf
SI7940DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62668 Stücke - Preis und Lieferfrist anzeigen
SQJ844EP-T1-GE3 sqj844ep.pdf
SQJ844EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 10.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4816DY-T1-GE3 71121.pdf
SI4816DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4933DY-T1-GE3 71980.pdf
SI4933DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 500µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4816DY-T1-E3 техническая информация 71121.pdf
SI4816DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90208 Stücke - Preis und Lieferfrist anzeigen
SI7212DN-T1-E3 si7212dn.pdf
SI7212DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A 1212-8
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7212
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10954 Stücke - Preis und Lieferfrist anzeigen
SI7212DN-T1-E3 si7212dn.pdf
SI7212DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A 1212-8
Base Part Number: SI7212
Operating Temperature: -55°C ~ 150°C (TJ)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2496 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8458 Stücke - Preis und Lieferfrist anzeigen
SI7964DP-T1-GE3 73101.pdf
SI7964DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SI6975DQ-T1-E3 71319.pdf
SI6975DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI4973DY-T1-E3 72164.pdf
SI4973DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 79643 Stücke - Preis und Lieferfrist anzeigen
SI4973DY-T1-GE3 72164.pdf
SI4973DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4944DY-T1-GE3 72512.pdf
SI4944DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ964EP-T1-GE3 sqj964ep.pdf
SQJ964EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SOIC
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Power - Max: 35W
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4923DY-T1-E3 72069.pdf
SI4923DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 105214 Stücke - Preis und Lieferfrist anzeigen
SI4923DY-T1-GE3 72069.pdf
SI4923DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4942DY-T1-GE3 71887.pdf
SI4942DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4542DY-T1-GE3 70666.pdf
SI4542DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4562DY-T1-GE3 70717.pdf
SI4562DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4562DY-T1-E3 70717.pdf
SI4562DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-SO
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 69080 Stücke - Preis und Lieferfrist anzeigen
Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]