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IRFR310PBF IRFR310PBF Vishay Siliconix sihfr310.pdf Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2352 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
75+ 2.84 EUR
150+ 2.25 EUR
525+ 1.91 EUR
1050+ 1.55 EUR
2025+ 1.46 EUR
Mindestbestellmenge: 8
IRFR310TRRPBF IRFR310TRRPBF Vishay Siliconix sihfr310.pdf Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFR320PBF IRFR320PBF Vishay Siliconix sihfr320.pdf Description: MOSFET N-CH 400V 3.1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2827 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.11 EUR
10+ 3.4 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 7
IRFR320TRLPBF IRFR320TRLPBF Vishay Siliconix sihfr320.pdf Description: MOSFET N-CH 400V 3.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
IRFR420PBF IRFR420PBF Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1213 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.94 EUR
75+ 2.36 EUR
150+ 1.87 EUR
525+ 1.59 EUR
1050+ 1.29 EUR
Mindestbestellmenge: 9
IRFR420TRLPBF IRFR420TRLPBF Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
IRFR420TRRPBF IRFR420TRRPBF Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9010PBF IRFR9010PBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 50V 5.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 14427 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.44 EUR
75+ 1.97 EUR
150+ 1.56 EUR
525+ 1.32 EUR
1050+ 1.08 EUR
2025+ 1.01 EUR
5025+ 0.96 EUR
10050+ 0.92 EUR
Mindestbestellmenge: 11
IRFR9014PBF IRFR9014PBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 60V 5.1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1670 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
75+ 2.06 EUR
150+ 1.63 EUR
525+ 1.38 EUR
1050+ 1.13 EUR
Mindestbestellmenge: 11
IRFR9020PBF IRFR9020PBF Vishay Siliconix sihfr902.pdf description Description: MOSFET P-CH 50V 9.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 771 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.26 EUR
10+ 3.55 EUR
100+ 2.82 EUR
500+ 2.39 EUR
Mindestbestellmenge: 7
IRFR9024PBF IRFR9024PBF Vishay Siliconix sihfr902.pdf Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3814 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.5 EUR
75+ 3.6 EUR
150+ 2.96 EUR
525+ 2.5 EUR
1050+ 2.13 EUR
2025+ 2.02 EUR
Mindestbestellmenge: 6
IRFR9110PBF IRFR9110PBF Vishay Siliconix sihfr911.pdf Description: MOSFET P-CH 100V 3.1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 8338 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.7 EUR
75+ 2.17 EUR
150+ 1.72 EUR
525+ 1.46 EUR
1050+ 1.19 EUR
2025+ 1.12 EUR
5025+ 1.07 EUR
Mindestbestellmenge: 10
IRFR9120PBF IRFR9120PBF Vishay Siliconix sihfr912.pdf Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 3841 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.25 EUR
75+ 2.6 EUR
150+ 2.06 EUR
525+ 1.75 EUR
1050+ 1.42 EUR
2025+ 1.34 EUR
Mindestbestellmenge: 8
IRFR9120TRLPBF IRFR9120TRLPBF Vishay Siliconix sihfr912.pdf Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.55 EUR
Mindestbestellmenge: 3000
IRFR9210PBF IRFR9210PBF Vishay Siliconix sihfr921.pdf Description: MOSFET P-CH 200V 1.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2965 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.09 EUR
11+ 2.52 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.35 EUR
2000+ 1.27 EUR
Mindestbestellmenge: 9
IRFR9210TRLPBF IRFR9210TRLPBF Vishay Siliconix sihfr921.pdf Description: MOSFET P-CH 200V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9220PBF IRFR9220PBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 1982 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.16 EUR
10+ 3.47 EUR
100+ 2.76 EUR
500+ 2.34 EUR
1000+ 1.98 EUR
Mindestbestellmenge: 7
IRFR9220TRLPBF IRFR9220TRLPBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9220TRRPBF IRFR9220TRRPBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9310PBF IRFR9310PBF Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 2487 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
75+ 3.11 EUR
150+ 2.46 EUR
525+ 2.09 EUR
1050+ 1.7 EUR
2025+ 1.6 EUR
Mindestbestellmenge: 7
IRFR9310TRLPBF IRFR9310TRLPBF Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
IRFRC20PBF IRFRC20PBF Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 4892 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
75+ 2.39 EUR
150+ 1.89 EUR
525+ 1.6 EUR
1050+ 1.31 EUR
2025+ 1.23 EUR
Mindestbestellmenge: 9
IRFRC20TRLPBF IRFRC20TRLPBF Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
IRFRC20TRRPBF IRFRC20TRRPBF Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
IRFS9N60ATRLPBF IRFS9N60ATRLPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+5.04 EUR
Mindestbestellmenge: 800
IRL530STRRPBF IRL530STRRPBF Vishay Siliconix sihl530s.pdf Description: MOSFET N-CH 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Produkt ist nicht verfügbar
IRL540STRLPBF IRL540STRLPBF Vishay Siliconix sihl540s.pdf Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
IRLL014PBF IRLL014PBF Vishay Siliconix sihll014.pdf Description: MOSFET N-CH 60V 2.7A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
IRLL110PBF IRLL110PBF Vishay Siliconix sihll110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
IRLR014PBF IRLR014PBF Vishay Siliconix sihlr014.pdf Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 2410 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.42 EUR
75+ 1.95 EUR
150+ 1.55 EUR
525+ 1.31 EUR
1050+ 1.07 EUR
2025+ 1 EUR
Mindestbestellmenge: 11
IRLR110PBF IRLR110PBF Vishay Siliconix sihlr110.pdf Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 370 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
75+ 2.39 EUR
150+ 1.89 EUR
Mindestbestellmenge: 9
IRLR110TRLPBF IRLR110TRLPBF Vishay Siliconix sihlr110.pdf Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
IRLR120PBF IRLR120PBF Vishay Siliconix IRLR%28U%29120%2C%20SiHLR%28U%29120.pdf Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 2263 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.82 EUR
75+ 3.07 EUR
150+ 2.43 EUR
525+ 2.06 EUR
1050+ 1.68 EUR
2025+ 1.58 EUR
Mindestbestellmenge: 7
IRLR120TRLPBF IRLR120TRLPBF Vishay Siliconix IRLR%28U%29120%2C%20SiHLR%28U%29120.pdf Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.58 EUR
Mindestbestellmenge: 3000
IRLZ44STRRPBF IRLZ44STRRPBF Vishay Siliconix sihlz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
IRF614SPBF IRF614SPBF Vishay Siliconix sihf614s.pdf Description: MOSFET N-CH 250V 2.7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
7+4 EUR
10+ 3.32 EUR
Mindestbestellmenge: 7
BS250KL-TR1-E3 BS250KL-TR1-E3 Vishay Siliconix 72712.pdf Description: MOSFET P-CH 60V 270MA TO92-18RM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-92-18RM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 15 V
Produkt ist nicht verfügbar
SI1012R-T1-E3 SI1012R-T1-E3 Vishay Siliconix si1012rx.pdf Description: MOSFET N-CH 20V 500MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1012X-T1-E3 SI1012X-T1-E3 Vishay Siliconix si1012rx.pdf Description: MOSFET N-CH 20V 500MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1013R-T1-E3 SI1013R-T1-E3 Vishay Siliconix 71167.pdf Description: MOSFET P-CH 20V 350MA SC-75A
Produkt ist nicht verfügbar
SI1013X-T1-E3 SI1013X-T1-E3 Vishay Siliconix 71167.pdf Description: MOSFET P-CH 20V 350MA SC89-3
Produkt ist nicht verfügbar
SI1016X-T1-E3 SI1016X-T1-E3 Vishay Siliconix si1016x.pdf Description: MOSFET N/P-CH 20V SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Produkt ist nicht verfügbar
SI1021R-T1-E3 SI1021R-T1-E3 Vishay Siliconix 71410.pdf Description: MOSFET P-CH 60V 190MA SC-75A
Produkt ist nicht verfügbar
SI1022R-T1-E3 SI1022R-T1-E3 Vishay Siliconix 71331.pdf Description: MOSFET N-CH 60V 330MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Produkt ist nicht verfügbar
SI1023X-T1-E3 SI1023X-T1-E3 Vishay Siliconix 71169.pdf Description: MOSFET 2P-CH 20V 0.37A SOT563F
Produkt ist nicht verfügbar
SI1024X-T1-E3 SI1024X-T1-E3 Vishay Siliconix 71170.pdf Description: MOSFET 2N-CH 20V 0.485A SOT563F
Produkt ist nicht verfügbar
SI1025X-T1-E3 SI1025X-T1-E3 Vishay Siliconix 71433.pdf Description: MOSFET 2P-CH 60V 0.19A SOT563F
Produkt ist nicht verfügbar
SI1026X-T1-E3 SI1026X-T1-E3 Vishay Siliconix si1026x.pdf Description: MOSFET 2N-CH 60V 0.305A SOT563F
Produkt ist nicht verfügbar
SI1029X-T1-E3 SI1029X-T1-E3 Vishay Siliconix 71435.pdf Description: MOSFET N/P-CH 60V SOT563F
Produkt ist nicht verfügbar
SI1031R-T1-E3 SI1031R-T1-E3 Vishay Siliconix si1031r.pdf Description: MOSFET P-CH 20V 0.14A SC-75A
Produkt ist nicht verfügbar
SI1032R-T1-E3 SI1032R-T1-E3 Vishay Siliconix si1032r.pdf Description: MOSFET N-CH 20V 140MA SC-75A
Produkt ist nicht verfügbar
SI1032X-T1-E3 SI1032X-T1-E3 Vishay Siliconix si1032r.pdf Description: MOSFET N-CH 20V 200MA SC89-3
Produkt ist nicht verfügbar
SI1033X-T1-E3 SI1033X-T1-E3 Vishay Siliconix 71428.pdf Description: MOSFET 2P-CH 20V 0.145A SOT563F
Produkt ist nicht verfügbar
SI1034X-T1-E3 SI1034X-T1-E3 Vishay Siliconix 71427.pdf Description: MOSFET 2N-CH 20V 0.18A SOT563F
Produkt ist nicht verfügbar
SI1035X-T1-E3 SI1035X-T1-E3 Vishay Siliconix 71426.pdf Description: MOSFET N/P-CH 20V SOT563F
Produkt ist nicht verfügbar
SI1039X-T1-E3 SI1039X-T1-E3 Vishay Siliconix 70682.pdf Description: MOSFET P-CH 12V 0.87A SOT563F
Produkt ist nicht verfügbar
SI1040X-T1-E3 SI1040X-T1-E3 Vishay Siliconix alucapsreach.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC89-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 430mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Obsolete
Produkt ist nicht verfügbar
SI1050X-T1-E3 SI1050X-T1-E3 Vishay Siliconix si1050x.pdf Description: MOSFET N-CH 8V 1.34A SOT563F
Produkt ist nicht verfügbar
SI1056X-T1-E3 SI1056X-T1-E3 Vishay Siliconix si1056x.pdf Description: MOSFET N-CH 20V 1.32A SOT563F
Produkt ist nicht verfügbar
IRFR310PBF sihfr310.pdf
IRFR310PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2352 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
75+ 2.84 EUR
150+ 2.25 EUR
525+ 1.91 EUR
1050+ 1.55 EUR
2025+ 1.46 EUR
Mindestbestellmenge: 8
IRFR310TRRPBF sihfr310.pdf
IRFR310TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFR320PBF sihfr320.pdf
IRFR320PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2827 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.11 EUR
10+ 3.4 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 7
IRFR320TRLPBF sihfr320.pdf
IRFR320TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
IRFR420PBF sihfr420.pdf
IRFR420PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1213 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.94 EUR
75+ 2.36 EUR
150+ 1.87 EUR
525+ 1.59 EUR
1050+ 1.29 EUR
Mindestbestellmenge: 9
IRFR420TRLPBF sihfr420.pdf
IRFR420TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
IRFR420TRRPBF sihfr420.pdf
IRFR420TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9010PBF sihfr901.pdf
IRFR9010PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 5.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 14427 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.44 EUR
75+ 1.97 EUR
150+ 1.56 EUR
525+ 1.32 EUR
1050+ 1.08 EUR
2025+ 1.01 EUR
5025+ 0.96 EUR
10050+ 0.92 EUR
Mindestbestellmenge: 11
IRFR9014PBF sihfr901.pdf
IRFR9014PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1670 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
75+ 2.06 EUR
150+ 1.63 EUR
525+ 1.38 EUR
1050+ 1.13 EUR
Mindestbestellmenge: 11
IRFR9020PBF description sihfr902.pdf
IRFR9020PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 771 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.26 EUR
10+ 3.55 EUR
100+ 2.82 EUR
500+ 2.39 EUR
Mindestbestellmenge: 7
IRFR9024PBF sihfr902.pdf
IRFR9024PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3814 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
75+ 3.6 EUR
150+ 2.96 EUR
525+ 2.5 EUR
1050+ 2.13 EUR
2025+ 2.02 EUR
Mindestbestellmenge: 6
IRFR9110PBF sihfr911.pdf
IRFR9110PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 8338 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
75+ 2.17 EUR
150+ 1.72 EUR
525+ 1.46 EUR
1050+ 1.19 EUR
2025+ 1.12 EUR
5025+ 1.07 EUR
Mindestbestellmenge: 10
IRFR9120PBF sihfr912.pdf
IRFR9120PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 3841 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.25 EUR
75+ 2.6 EUR
150+ 2.06 EUR
525+ 1.75 EUR
1050+ 1.42 EUR
2025+ 1.34 EUR
Mindestbestellmenge: 8
IRFR9120TRLPBF sihfr912.pdf
IRFR9120TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.55 EUR
Mindestbestellmenge: 3000
IRFR9210PBF sihfr921.pdf
IRFR9210PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2965 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.09 EUR
11+ 2.52 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.35 EUR
2000+ 1.27 EUR
Mindestbestellmenge: 9
IRFR9210TRLPBF sihfr921.pdf
IRFR9210TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9220PBF sihfr922.pdf
IRFR9220PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 1982 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.16 EUR
10+ 3.47 EUR
100+ 2.76 EUR
500+ 2.34 EUR
1000+ 1.98 EUR
Mindestbestellmenge: 7
IRFR9220TRLPBF sihfr922.pdf
IRFR9220TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9220TRRPBF sihfr922.pdf
IRFR9220TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9310PBF sihfr931.pdf
IRFR9310PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 2487 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
75+ 3.11 EUR
150+ 2.46 EUR
525+ 2.09 EUR
1050+ 1.7 EUR
2025+ 1.6 EUR
Mindestbestellmenge: 7
IRFR9310TRLPBF sihfr931.pdf
IRFR9310TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
IRFRC20PBF sihfrc20.pdf
IRFRC20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 4892 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
75+ 2.39 EUR
150+ 1.89 EUR
525+ 1.6 EUR
1050+ 1.31 EUR
2025+ 1.23 EUR
Mindestbestellmenge: 9
IRFRC20TRLPBF sihfrc20.pdf
IRFRC20TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
IRFRC20TRRPBF sihfrc20.pdf
IRFRC20TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
IRFS9N60ATRLPBF sihs9n60.pdf
IRFS9N60ATRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+5.04 EUR
Mindestbestellmenge: 800
IRL530STRRPBF sihl530s.pdf
IRL530STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Produkt ist nicht verfügbar
IRL540STRLPBF sihl540s.pdf
IRL540STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
IRLL014PBF sihll014.pdf
IRLL014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
IRLL110PBF sihll110.pdf
IRLL110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
IRLR014PBF sihlr014.pdf
IRLR014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 2410 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.42 EUR
75+ 1.95 EUR
150+ 1.55 EUR
525+ 1.31 EUR
1050+ 1.07 EUR
2025+ 1 EUR
Mindestbestellmenge: 11
IRLR110PBF sihlr110.pdf
IRLR110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 370 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
75+ 2.39 EUR
150+ 1.89 EUR
Mindestbestellmenge: 9
IRLR110TRLPBF sihlr110.pdf
IRLR110TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
IRLR120PBF IRLR%28U%29120%2C%20SiHLR%28U%29120.pdf
IRLR120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 2263 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.82 EUR
75+ 3.07 EUR
150+ 2.43 EUR
525+ 2.06 EUR
1050+ 1.68 EUR
2025+ 1.58 EUR
Mindestbestellmenge: 7
IRLR120TRLPBF IRLR%28U%29120%2C%20SiHLR%28U%29120.pdf
IRLR120TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.58 EUR
Mindestbestellmenge: 3000
IRLZ44STRRPBF sihlz44s.pdf
IRLZ44STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
IRF614SPBF sihf614s.pdf
IRF614SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4 EUR
10+ 3.32 EUR
Mindestbestellmenge: 7
BS250KL-TR1-E3 72712.pdf
BS250KL-TR1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 270MA TO92-18RM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-92-18RM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 15 V
Produkt ist nicht verfügbar
SI1012R-T1-E3 si1012rx.pdf
SI1012R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1012X-T1-E3 si1012rx.pdf
SI1012X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1013R-T1-E3 71167.pdf
SI1013R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC-75A
Produkt ist nicht verfügbar
SI1013X-T1-E3 71167.pdf
SI1013X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC89-3
Produkt ist nicht verfügbar
SI1016X-T1-E3 si1016x.pdf
SI1016X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Produkt ist nicht verfügbar
SI1021R-T1-E3 71410.pdf
SI1021R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC-75A
Produkt ist nicht verfügbar
SI1022R-T1-E3 71331.pdf
SI1022R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 330MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Produkt ist nicht verfügbar
SI1023X-T1-E3 71169.pdf
SI1023X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SOT563F
Produkt ist nicht verfügbar
SI1024X-T1-E3 71170.pdf
SI1024X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SOT563F
Produkt ist nicht verfügbar
SI1025X-T1-E3 71433.pdf
SI1025X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SOT563F
Produkt ist nicht verfügbar
SI1026X-T1-E3 si1026x.pdf
SI1026X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SOT563F
Produkt ist nicht verfügbar
SI1029X-T1-E3 71435.pdf
SI1029X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SOT563F
Produkt ist nicht verfügbar
SI1031R-T1-E3 si1031r.pdf
SI1031R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.14A SC-75A
Produkt ist nicht verfügbar
SI1032R-T1-E3 si1032r.pdf
SI1032R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC-75A
Produkt ist nicht verfügbar
SI1032X-T1-E3 si1032r.pdf
SI1032X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 200MA SC89-3
Produkt ist nicht verfügbar
SI1033X-T1-E3 71428.pdf
SI1033X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.145A SOT563F
Produkt ist nicht verfügbar
SI1034X-T1-E3 71427.pdf
SI1034X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SOT563F
Produkt ist nicht verfügbar
SI1035X-T1-E3 71426.pdf
SI1035X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SOT563F
Produkt ist nicht verfügbar
SI1039X-T1-E3 70682.pdf
SI1039X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SOT563F
Produkt ist nicht verfügbar
SI1040X-T1-E3 alucapsreach.pdf
SI1040X-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC89-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 430mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Obsolete
Produkt ist nicht verfügbar
SI1050X-T1-E3 si1050x.pdf
SI1050X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SOT563F
Produkt ist nicht verfügbar
SI1056X-T1-E3 si1056x.pdf
SI1056X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.32A SOT563F
Produkt ist nicht verfügbar
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