Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11099) > Seite 14 nach 185

Wählen Sie Seite:   [  << Vorherige Seite ]  1 9 10 11 12 13 14 15 16 17 18 19 36 54 72 90 108 126 144 162 180 185  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFI9Z14GPBF IRFI9Z14GPBF Vishay Siliconix irfi9z14g.pdf Description: MOSFET P-CH 60V 5.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
10+2.25 EUR
100+1.81 EUR
500+1.44 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF644NSPBF IRF644NSPBF Vishay Siliconix IRF%2CSiHF644N%2CNS%2CNL%2C.pdf Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF634SPBF IRF634SPBF Vishay Siliconix Description: MOSFET N-CH 250V 8.1A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9520SPBF IRF9520SPBF Vishay Siliconix sihf9520.pdf Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
50+2.07 EUR
100+1.96 EUR
500+1.58 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ30PBF IRFZ30PBF Vishay Siliconix IRFZ30%2C%20IRFZ32.pdf Description: MOSFET N-CH 50V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF730ASPBF IRF730ASPBF Vishay Siliconix sihf730a.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.96 EUR
50+2.14 EUR
100+2.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640PBF Vishay Siliconix IRF9640_SiHF9640.pdf Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI634GPBF IRFI634GPBF Vishay Siliconix 91149.pdf Description: MOSFET N-CH 250V 5.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
auf Bestellung 604 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
50+2.96 EUR
100+2.43 EUR
500+2.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF IRF9620PBF Vishay Siliconix 91082.pdf Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3027 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
50+1.43 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF830SPBF IRF830SPBF Vishay Siliconix sihf830s.pdf Description: MOSFET N-CH 500V 4.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
50+1.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ASPBF IRF830ASPBF Vishay Siliconix sihf830a.pdf Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.54 EUR
50+2.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ALPBF IRF830ALPBF Vishay Siliconix sihf830a.pdf Description: MOSFET N-CH 500V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF730SPBF IRF730SPBF Vishay Siliconix sihf730s.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFBF20PBF IRFBF20PBF Vishay Siliconix 91120.pdf Description: MOSFET N-CH 900V 1.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
50+1.49 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFBF20SPBF IRFBF20SPBF Vishay Siliconix sihfb20s.pdf Description: MOSFET N-CH 900V 1.7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFI720GPBF IRFI720GPBF Vishay Siliconix sihfi720.pdf Description: MOSFET N-CH 400V 2.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
10+2.97 EUR
100+2.23 EUR
500+1.81 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRFBF20LPBF IRFBF20LPBF Vishay Siliconix sihfb20s.pdf Description: MOSFET N-CH 900V 1.7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
100+1.77 EUR
500+1.76 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFBE20PBF IRFBE20PBF Vishay Siliconix 91117.pdf Description: MOSFET N-CH 800V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9520GPBF IRFI9520GPBF Vishay Siliconix Description: MOSFET P-CH 100V 5.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.1A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 1104 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.16 EUR
50+2.69 EUR
100+2.43 EUR
500+1.97 EUR
1000+1.82 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9620GPBF IRFI9620GPBF Vishay Siliconix irfi9620g.pdf Description: MOSFET P-CH 200V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 4283 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
11+1.65 EUR
100+1.62 EUR
500+1.51 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRL640PBF IRL640PBF Vishay Siliconix irl640.pdf Description: MOSFET N-CH 200V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 4781 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
50+2.03 EUR
100+1.94 EUR
500+1.81 EUR
1000+1.68 EUR
2000+1.56 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC40APBF IRFBC40APBF Vishay Siliconix IRFBC40A_SiHFBC40A.pdf Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
50+1.58 EUR
100+1.53 EUR
500+1.52 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC40PBF IRFBC40PBF Vishay Siliconix 91115.pdf Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.31 EUR
50+1.61 EUR
100+1.59 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC20PBF IRFBC20PBF Vishay Siliconix irfbc20.pdf Description: MOSFET N-CH 600V 2.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 5361 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
50+1.56 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRF744PBF IRF744PBF Vishay Siliconix IRF744%2C%20SiHF744.pdf Description: MOSFET N-CH 450V 8.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9Z24GPBF IRFI9Z24GPBF Vishay Siliconix 91171.pdf Description: MOSFET P-CH 60V 8.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.1A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF IRF9630PBF Vishay Siliconix IRF9630%2CSiHF9630.pdf Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
50+1.7 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFIBC20GPBF IRFIBC20GPBF Vishay Siliconix Description: MOSFET N-CH 600V 1.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
50+3.33 EUR
100+2.74 EUR
500+2.32 EUR
1000+1.97 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRCZ24PBF Vishay Siliconix ircz24.pdf Description: MOSFET N-CH 55V 17A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL540PBF IRL540PBF Vishay Siliconix irl620.pdf Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9630GPBF IRFI9630GPBF Vishay Siliconix irfi9630g.pdf Description: MOSFET P-CH 200V 4.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 2007 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.08 EUR
10+2.83 EUR
100+2.15 EUR
500+1.8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFB9N30APBF IRFB9N30APBF Vishay Siliconix IRFB9N30A,SiHFB9N30A.pdf Description: MOSFET N-CH 300V 9.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ40PBF IRFZ40PBF Vishay Siliconix irfz40.pdf Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
50+1.73 EUR
100+1.7 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF Vishay Siliconix 91054.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4717 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
50+1.7 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44RPBF IRFZ44RPBF Vishay Siliconix irfz44r.pdf Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.93 EUR
50+2.51 EUR
100+2.39 EUR
500+1.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF IRF740APBF Vishay Siliconix 91051.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI820GPBF IRFI820GPBF Vishay Siliconix sihfi820.pdf Description: MOSFET N-CH 500V 2.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540PBF IRF540PBF Vishay Siliconix irf540.pdf Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
50+1.9 EUR
100+1.89 EUR
500+1.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z34PBF IRF9Z34PBF Vishay Siliconix IRF9Z34_SiHF9Z34_RevC_5-2-16.pdf Description: MOSFET P-CH 60V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
50+1.7 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z30PBF IRF9Z30PBF Vishay Siliconix irl620.pdf description Description: MOSFET P-CH 50V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
50+2.35 EUR
100+2.01 EUR
500+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFBE30LPBF IRFBE30LPBF Vishay Siliconix tf-irfbe30lpbf.pdf Description: MOSFET N-CH 800V 4.1A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
50+2.13 EUR
100+2.11 EUR
500+1.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF840SPBF IRF840SPBF Vishay Siliconix sihf840s.pdf Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
50+1.74 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC20SPBF IRFBC20SPBF Vishay Siliconix tf-irfbc20spbf.pdf Description: MOSFET N-CH 600V 2.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFIZ44GPBF IRFIZ44GPBF Vishay Siliconix 91189.pdf Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFBG20PBF IRFBG20PBF Vishay Siliconix sihbg20.pdf Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 7633 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFBG30PBF IRFBG30PBF Vishay Siliconix irfbg30.pdf Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF644PBF IRF644PBF Vishay Siliconix 91039.pdf Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
50+2.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRC530PBF Vishay Siliconix IRC530PBF.pdf Description: MOSFET N-CH 100V 14A TO220-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI830GPBF IRFI830GPBF Vishay Siliconix tf-irfi830gpbf.pdf Description: MOSFET N-CH 500V 3.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.43 EUR
100+1.66 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFIBE20GPBF IRFIBE20GPBF Vishay Siliconix tf-irfibe20gpbf.pdf Description: MOSFET N-CH 800V 1.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 840mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+1.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF540SPBF IRF540SPBF Vishay Siliconix sihf540s.pdf Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF IRF840APBF Vishay Siliconix 91065.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 842 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
50+2.04 EUR
100+2.03 EUR
500+2.02 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRCZ34PBF Vishay Siliconix ircz34.pdf Description: MOSFET N-CH 60V 30A TO220-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB11N50APBF IRFB11N50APBF Vishay Siliconix 91094.pdf Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
50+1.9 EUR
100+1.84 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540PBF IRF9540PBF Vishay Siliconix 91078.pdf Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1716 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
50+1.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC30APBF IRFBC30APBF Vishay Siliconix 91108.pdf Description: MOSFET N-CH 600V 3.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFB9N60APBF IRFB9N60APBF Vishay Siliconix 91103.pdf Description: MOSFET N-CH 600V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
50+1.99 EUR
1000+1.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44PBF IRLZ44PBF Vishay Siliconix tf-irlz44pbf.pdf Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
50+1.89 EUR
100+1.87 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ALPBF IRF740ALPBF Vishay Siliconix tf-irf740alpbf.pdf Description: MOSFET N-CH 400V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.94 EUR
50+2.25 EUR
100+2.22 EUR
500+2.13 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48RPBF IRFZ48RPBF Vishay Siliconix irfz48r.pdf Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.03 EUR
50+2.73 EUR
100+2.61 EUR
500+2.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9Z14GPBF irfi9z14g.pdf
IRFI9Z14GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
10+2.25 EUR
100+1.81 EUR
500+1.44 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF644NSPBF IRF%2CSiHF644N%2CNS%2CNL%2C.pdf
IRF644NSPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF634SPBF
IRF634SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9520SPBF sihf9520.pdf
IRF9520SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
50+2.07 EUR
100+1.96 EUR
500+1.58 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ30PBF IRFZ30%2C%20IRFZ32.pdf
IRFZ30PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF730ASPBF sihf730a.pdf
IRF730ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
50+2.14 EUR
100+2.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640_SiHF9640.pdf
IRF9640PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI634GPBF 91149.pdf
IRFI634GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 5.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
auf Bestellung 604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
50+2.96 EUR
100+2.43 EUR
500+2.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF 91082.pdf
IRF9620PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
50+1.43 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF830SPBF sihf830s.pdf
IRF830SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
50+1.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ASPBF sihf830a.pdf
IRF830ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
50+2.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ALPBF sihf830a.pdf
IRF830ALPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF730SPBF sihf730s.pdf
IRF730SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFBF20PBF 91120.pdf
IRFBF20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
50+1.49 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFBF20SPBF sihfb20s.pdf
IRFBF20SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFI720GPBF sihfi720.pdf
IRFI720GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 2.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+2.97 EUR
100+2.23 EUR
500+1.81 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRFBF20LPBF sihfb20s.pdf
IRFBF20LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
100+1.77 EUR
500+1.76 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFBE20PBF 91117.pdf
IRFBE20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9520GPBF
IRFI9520GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.1A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 1104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
50+2.69 EUR
100+2.43 EUR
500+1.97 EUR
1000+1.82 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9620GPBF irfi9620g.pdf
IRFI9620GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 4283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
11+1.65 EUR
100+1.62 EUR
500+1.51 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRL640PBF irl640.pdf
IRL640PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 4781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
50+2.03 EUR
100+1.94 EUR
500+1.81 EUR
1000+1.68 EUR
2000+1.56 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC40APBF IRFBC40A_SiHFBC40A.pdf
IRFBC40APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
50+1.58 EUR
100+1.53 EUR
500+1.52 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC40PBF 91115.pdf
IRFBC40PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
50+1.61 EUR
100+1.59 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC20PBF irfbc20.pdf
IRFBC20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 5361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
50+1.56 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRF744PBF IRF744%2C%20SiHF744.pdf
IRF744PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 450V 8.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9Z24GPBF 91171.pdf
IRFI9Z24GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.1A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF IRF9630%2CSiHF9630.pdf
IRF9630PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
50+1.7 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFIBC20GPBF
IRFIBC20GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
50+3.33 EUR
100+2.74 EUR
500+2.32 EUR
1000+1.97 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRCZ24PBF ircz24.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 17A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL540PBF irl620.pdf
IRL540PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI9630GPBF irfi9630g.pdf
IRFI9630GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 4.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 2007 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.83 EUR
100+2.15 EUR
500+1.8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFB9N30APBF IRFB9N30A,SiHFB9N30A.pdf
IRFB9N30APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 300V 9.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ40PBF irfz40.pdf
IRFZ40PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
50+1.73 EUR
100+1.7 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF 91054.pdf
IRF740PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
50+1.7 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44RPBF irfz44r.pdf
IRFZ44RPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
50+2.51 EUR
100+2.39 EUR
500+1.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF 91051.pdf
IRF740APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI820GPBF sihfi820.pdf
IRFI820GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540PBF irf540.pdf
IRF540PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
50+1.9 EUR
100+1.89 EUR
500+1.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z34PBF IRF9Z34_SiHF9Z34_RevC_5-2-16.pdf
IRF9Z34PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
50+1.7 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z30PBF description irl620.pdf
IRF9Z30PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
50+2.35 EUR
100+2.01 EUR
500+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFBE30LPBF tf-irfbe30lpbf.pdf
IRFBE30LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.72 EUR
50+2.13 EUR
100+2.11 EUR
500+1.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF840SPBF sihf840s.pdf
IRF840SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
50+1.74 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC20SPBF tf-irfbc20spbf.pdf
IRFBC20SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFIZ44GPBF 91189.pdf
IRFIZ44GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFBG20PBF sihbg20.pdf
IRFBG20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 7633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFBG30PBF irfbg30.pdf
IRFBG30PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF644PBF 91039.pdf
IRF644PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
50+2.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRC530PBF IRC530PBF.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI830GPBF tf-irfi830gpbf.pdf
IRFI830GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.43 EUR
100+1.66 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFIBE20GPBF tf-irfibe20gpbf.pdf
IRFIBE20GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 1.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 840mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+1.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF540SPBF sihf540s.pdf
IRF540SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF 91065.pdf
IRF840APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
50+2.04 EUR
100+2.03 EUR
500+2.02 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRCZ34PBF ircz34.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB11N50APBF 91094.pdf
IRFB11N50APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
50+1.9 EUR
100+1.84 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540PBF 91078.pdf
IRF9540PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
50+1.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFBC30APBF 91108.pdf
IRFBC30APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFB9N60APBF 91103.pdf
IRFB9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
50+1.99 EUR
1000+1.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44PBF tf-irlz44pbf.pdf
IRLZ44PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
50+1.89 EUR
100+1.87 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ALPBF tf-irf740alpbf.pdf
IRF740ALPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
50+2.25 EUR
100+2.22 EUR
500+2.13 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48RPBF irfz48r.pdf
IRFZ48RPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
50+2.73 EUR
100+2.61 EUR
500+2.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 9 10 11 12 13 14 15 16 17 18 19 36 54 72 90 108 126 144 162 180 185  [ Nächste Seite >> ]