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SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 siz900dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 24A POWERPAIR
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
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SI8902EDB-T2-E1 SI8902EDB-T2-E1 si8902edb.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 3.9A 6-MFP
Base Part Number: SI8902
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Vgs(th) (Max) @ Id: 1V @ 980µA
Current - Continuous Drain (Id) @ 25°C: 3.9A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
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SI7872DP-T1-GE3 SI7872DP-T1-GE3 si7872dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: PowerPAK® SO-8 Dual
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SI4622DY-T1-GE3 SI4622DY-T1-GE3 si4622dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.1W
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SI4340CDY-T1-E3 SI4340CDY-T1-E3 si4340cd.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 11.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 3W, 5.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 14-SOIC
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Vishay Siliconix Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 11.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Type: 2 N-Channel (Dual)
Power - Max: 3W, 5.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
FET Feature: Logic Level Gate
Packaging: Cut Tape (CT)
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Vishay Siliconix Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Power - Max: 3W, 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 14-SOICN
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI7964DP-T1-E3 SI7964DP-T1-E3 73101.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
Package / Case: PowerPAK® SO-8 Dual
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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SI4542DY-T1-E3 SI4542DY-T1-E3 70666.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 8-SOIC
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
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SI7960DP-T1-GE3 SI7960DP-T1-GE3 73075.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI2325DS-T1-E3 SI2325DS-T1-E3 73238.pdf Vishay Siliconix Description: MOSFET P-CH 150V 0.53A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 150V
Base Part Number: SI2325
Package / Case: TO-236-3, SC-59, SOT-23-3
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
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DG419LDY-E3 DG419LDY-E3 dg417l.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
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DG411LDY-E3 DG411LDY-E3 DG411L,412L,413L.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST LV 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
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DG409LDY-E3 DG409LDY-E3 DG408L,409L.pdf техническая информация Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 29Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -82dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 2
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DG419BDY-E3 DG419BDY-E3 dg417b.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -88dB @ 1MHz
Charge Injection: 38pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG408DY-E3 DG408DY-E3 dg408.pdf Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
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DG9233DY-E3 DG9233DY-E3 dg9232.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8SOIC
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: DG9233
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DG212BDJ-E3 DG212BDJ-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
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5+ 6.08 EUR
10+ 5.47 EUR
25+ 5.16 EUR
100+ 4.4 EUR
DG211BDJ-E3 DG211BDJ-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
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5+ 6.08 EUR
10+ 5.47 EUR
25+ 5.16 EUR
100+ 4.4 EUR
250+ 4.13 EUR
DG417DY-E3 DG417DY-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPST 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG419DY-E3 DG419DY-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
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DG413DY-E3 DG413DY-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tube
Manufacturer: Vishay Siliconix
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
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DG418DY-E3 DG418DY-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG411DY-E3 DG411DY-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
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DG202BDJ-E3 DG202BDJ-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16DIP
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
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DG409DJ-E3 DG409DJ-E3 dg408.pdf Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16DIP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG212BDY-E3 DG212BDY-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
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DG309BDJ-E3 DG309BDJ-E3 dg308b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16DIP
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Packaging: Tube
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DG201BDY-E3 DG201BDY-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH ANA QUAD CMOS 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG201BDJ-E3 DG201BDJ-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
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DG211BDY-E3 DG211BDY-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG445DJ-E3 DG445DJ-E3 dg444.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG411DJ-E3 DG411DJ-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-DIP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG418DJ-E3 DG418DJ-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8DIP
Base Part Number: DG418
Supplier Device Package: 8-PDIP
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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DG408DJ-E3 DG408DJ-E3 dg408.pdf техническая информация Vishay Siliconix Description: IC MUX CMOS ANLG DUAL 8CH 16DIP
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
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DG441DJ-E3 DG441DJ-E3 dg441.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
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DG419DJ-E3 DG419DJ-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8DIP
Part Status: Active
Number of Circuits: 1
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-PDIP
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4+ 6.97 EUR
10+ 6.26 EUR
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500+ 4.36 EUR
DG308ACJ-E3 DG308ACJ-E3 dg308a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Dual (V±): ±15V
Charge Injection: -10pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG417DJ-E3 DG417DJ-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPST 8DIP
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-PDIP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Packaging: Tube
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
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DG200BDJ-E3 DG200BDJ-E3 dg200b.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 14DIP
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm)
On-State Resistance (Max): 85Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG202BDY-E3 DG202BDY-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16SOIC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Bulk
Base Part Number: DG202
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
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DG308BDJ-E3 DG308BDJ-E3 dg308b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16DIP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG309CJ-E3 DG309CJ-E3 dg308a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST/CMOS 16DIP
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG641DY-E3 DG641DY-E3 70058.pdf Vishay Siliconix Description: IC VIDEO SWITCH SPDT 16DSOIC
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 15Ohm
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 19pC
-3db Bandwidth: 500MHz
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
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DG642DY-E3 DG642DY-E3 70058.pdf Vishay Siliconix Description: IC VIDEO SWITCH SPDT 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 5MHz
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Charge Injection: 40pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 500mOhm
On-State Resistance (Max): 8Ohm
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DG442DJ-E3 DG442DJ-E3 dg441.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
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DG403DJ-E3 DG403DJ-E3 dg401.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 10pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
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DG409DY-E3 DG409DY-E3 dg408.pdf техническая информация Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
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DG411HSDY-E3 DG411HSDY-E3 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG403DY-E3 DG403DY-E3 dg401.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 34V
Voltage - Supply, Dual (V±): ±5V ~ 17V
Charge Injection: 60pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
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DG405DY-E3 DG405DY-E3 dg401.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 16SOIC
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 45Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Part Status: Active
Packaging: Tube
Base Part Number: DG405
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
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Lieferzeit 21-28 Tag (e)
DG403BDJ-E3 DG403BDJ-E3 73069.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 16DIP
Base Part Number: DG403
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -94.8dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG412HSDJ-E3 DG412HSDJ-E3 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
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DG411HSDJ-E3 DG411HSDJ-E3 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG406DJ-E3 DG406DJ-E3 dg406.pdf Vishay Siliconix Description: IC MUX CMOS ANLG DUAL 8CH 28-DIP
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 16:1
Number of Circuits: 1
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Charge Injection: 15pC
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Base Part Number: DG406
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG407DJ-E3 DG407DJ-E3 dg406.pdf Vishay Siliconix Description: IC MUX CMOS ANLG DUAL 8CH 28DIP
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Base Part Number: DG407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TP0610K-T1-GE3 TP0610K-T1-GE3 tp0610k.pdf Vishay Siliconix Description: MOSFET P-CH 60V 185MA TO-236
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
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SI4488DY-T1-E3 SI4488DY-T1-E3 71240.pdf Vishay Siliconix Description: MOSFET N-CH 150V 3.5A 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
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Lieferzeit 21-28 Tag (e)
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SIP12501DMP-T1-E3 sip12501.pdf Vishay Siliconix Description: IC BOOST REG PWM PPAK MLP33-6
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Voltage - Output: 3.5 V ~ 5 V
Voltage - Supply: 0.65 V ~ 3.3 V
Frequency: 425kHz ~ 775kHz
Type - Secondary: White LED
Type - Primary: Backlight
Internal Driver: Yes
Number of Outputs: 1
Topology: PWM, Step-Up (Boost)
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PowerPAK® MLP33-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6954ADQ-T1-E3 SI6954ADQ-T1-E3 71130.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI6954
Supplier Device Package: 8-TSSOP
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SIC413CB-T1-E3 SIC413CB-T1-E3 sic413.pdf Vishay Siliconix Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.75V
Voltage - Input (Max): 26V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 13.2V
Current - Output: 4A
Frequency - Switching: 500kHz
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
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SI4590DY-T1-GE3 SI4590DY-T1-GE3 si4590dy.pdf Vishay Siliconix Description: MOSFET N/P CHAN 100V SO8 DUAL
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Drain to Source Voltage (Vdss): 100V
FET Type: N and P-Channel
Power - Max: 2.4W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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8671602EA Vishay Siliconix Description: MOSFET
Manufacturer: Vishay Siliconix
Packaging: Bulk
Part Status: Obsolete
Base Part Number: 867160
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS73DN-T1-GE3 siss73dn.pdf Vishay Siliconix Description: MOSFET P-CH 150V PP 1212-8
Part Status: Active
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SI7460DP-T1-E3 SI7460DP-T1-E3 si7460dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 11A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
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SI1013R-T1-GE3 SI1013R-T1-GE3 71167.pdf Vishay Siliconix Description: MOSFET P-CH 20V 350MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1013
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Vishay Siliconix Description: MOSFET P-CH 20V 350MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1013
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SI1032X-T1-GE3 SI1032X-T1-GE3 si1032r.pdf Vishay Siliconix Description: MOSFET N-CH 20V 200MA SC89-3
Base Part Number: SI1032
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 20V 200MA SC89-3
Base Part Number: SI1032
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 si2303cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TP0610K-T1-E3 TP0610K-T1-E3 tp0610k.pdf Vishay Siliconix Description: MOSFET P-CH 60V 185MA SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
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Vishay Siliconix Description: MOSFET P-CH 60V 185MA SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SI1300BDL-T1-E3 SI1300BDL-T1-E3 si1300bd.pdf Vishay Siliconix Description: MOSFET N-CH 20V 400MA SOT323-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1304BDL-T1-E3 SI1304BDL-T1-E3 si1304bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 900MA SC70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
Vgs (Max): ±12V
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1013X-T1-GE3 SI1013X-T1-GE3 71167.pdf Vishay Siliconix Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
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Vishay Siliconix Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
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SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 si1300bd.pdf Vishay Siliconix Description: MOSFET N-CH 20V 400MA SC-70-3
Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8810EDB-T2-E1 SI8810EDB-T2-E1 si8810edb.pdf Vishay Siliconix Description: MOSFET N-CH 20V 2.1A MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Part Number: SI8810
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1302DL-T1-E3 SI1302DL-T1-E3 71249.pdf Vishay Siliconix Description: MOSFET N-CH 30V 600MA SC70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1302
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
auf Bestellung 18000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40424 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 600MA SC70-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1302
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
auf Bestellung 18508 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40424 Stücke - Preis und Lieferfrist anzeigen
SI1403BDL-T1-E3 SI1403BDL-T1-E3 si1403bdl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.4A SC70-6
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 568mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIZ900DT-T1-GE3 siz900dt.pdf
SIZ900DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A POWERPAIR
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
auf Bestellung 2900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
SI8902EDB-T2-E1 si8902edb.pdf
SI8902EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.9A 6-MFP
Base Part Number: SI8902
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Vgs(th) (Max) @ Id: 1V @ 980µA
Current - Continuous Drain (Id) @ 25°C: 3.9A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100360 Stücke - Preis und Lieferfrist anzeigen
SI7872DP-T1-GE3 si7872dp.pdf
SI7872DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4622DY-T1-GE3 si4622dy.pdf
SI4622DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4340CDY-T1-E3 si4340cd.pdf
SI4340CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 11.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 3W, 5.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 98730 Stücke - Preis und Lieferfrist anzeigen
SI4340CDY-T1-E3 si4340cd.pdf
SI4340CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 11.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Type: 2 N-Channel (Dual)
Power - Max: 3W, 5.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
FET Feature: Logic Level Gate
Packaging: Cut Tape (CT)
auf Bestellung 612 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 98118 Stücke - Preis und Lieferfrist anzeigen
SI4340CDY-T1-E3 si4340cd.pdf
SI4340CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Power - Max: 3W, 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 14-SOICN
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 618 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 98112 Stücke - Preis und Lieferfrist anzeigen
SI7964DP-T1-E3 73101.pdf
SI7964DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.1A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
Package / Case: PowerPAK® SO-8 Dual
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4542DY-T1-E3 70666.pdf
SI4542DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8-SOIC
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 92518 Stücke - Preis und Lieferfrist anzeigen
SI7960DP-T1-GE3 73075.pdf
SI7960DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2325DS-T1-E3 73238.pdf
SI2325DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 0.53A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 150V
Base Part Number: SI2325
Package / Case: TO-236-3, SC-59, SOT-23-3
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
auf Bestellung 46592 Stücke
Lieferzeit 21-28 Tag (e)
DG419LDY-E3 dg417l.pdf
DG419LDY-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG411LDY-E3 DG411L,412L,413L.pdf
DG411LDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
DG409LDY-E3 техническая информация DG408L,409L.pdf
DG409LDY-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 29Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -82dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG419BDY-E3 dg417b.pdf
DG419BDY-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -88dB @ 1MHz
Charge Injection: 38pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG408DY-E3 dg408.pdf
DG408DY-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5188 Stücke - Preis und Lieferfrist anzeigen
DG9233DY-E3 dg9232.pdf
DG9233DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: DG9233
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG212BDJ-E3 70040.pdf
DG212BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
auf Bestellung 142 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38 Stücke - Preis und Lieferfrist anzeigen
5+ 6.08 EUR
10+ 5.47 EUR
25+ 5.16 EUR
100+ 4.4 EUR
DG211BDJ-E3 70040.pdf
DG211BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
auf Bestellung 261 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
5+ 6.08 EUR
10+ 5.47 EUR
25+ 5.16 EUR
100+ 4.4 EUR
250+ 4.13 EUR
DG417DY-E3 dg417.pdf
DG417DY-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG419DY-E3 dg417.pdf
DG419DY-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG413DY-E3 dg411.pdf
DG413DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tube
Manufacturer: Vishay Siliconix
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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DG418DY-E3 dg417.pdf
DG418DY-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG411DY-E3 dg411.pdf
DG411DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG202BDJ-E3 dg201b.pdf
DG202BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16DIP
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
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Lieferzeit 21-28 Tag (e)
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DG409DJ-E3 dg408.pdf
DG409DJ-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16DIP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 388 Stücke
Lieferzeit 21-28 Tag (e)
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DG212BDY-E3 70040.pdf
DG212BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG309BDJ-E3 dg308b.pdf
DG309BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16DIP
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG201BDY-E3 dg201b.pdf
DG201BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH ANA QUAD CMOS 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG201BDJ-E3 dg201b.pdf
DG201BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 501 Stücke
Lieferzeit 21-28 Tag (e)
DG211BDY-E3 70040.pdf
DG211BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG445DJ-E3 dg444.pdf
DG445DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 274 Stücke
Lieferzeit 21-28 Tag (e)
DG411DJ-E3 dg411.pdf
DG411DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
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DG418DJ-E3 dg417.pdf
DG418DJ-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8DIP
Base Part Number: DG418
Supplier Device Package: 8-PDIP
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG408DJ-E3 техническая информация dg408.pdf
DG408DJ-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 16DIP
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG441DJ-E3 dg441.pdf
DG441DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
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Lieferzeit 21-28 Tag (e)
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4+ 7.25 EUR
10+ 6.52 EUR
25+ 6.16 EUR
100+ 5.34 EUR
DG419DJ-E3 dg417.pdf
DG419DJ-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8DIP
Part Status: Active
Number of Circuits: 1
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-PDIP
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Lieferzeit 21-28 Tag (e)
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4+ 6.97 EUR
10+ 6.26 EUR
25+ 5.91 EUR
100+ 5.13 EUR
250+ 4.86 EUR
500+ 4.36 EUR
DG308ACJ-E3 dg308a.pdf
DG308ACJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Dual (V±): ±15V
Charge Injection: -10pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG417DJ-E3 dg417.pdf
DG417DJ-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8DIP
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-PDIP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Packaging: Tube
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
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Lieferzeit 21-28 Tag (e)
DG200BDJ-E3 dg200b.pdf
DG200BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14DIP
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm)
On-State Resistance (Max): 85Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
auf Bestellung 439 Stücke
Lieferzeit 21-28 Tag (e)
DG202BDY-E3 dg201b.pdf
DG202BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16SOIC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Bulk
Base Part Number: DG202
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
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Lieferzeit 21-28 Tag (e)
DG308BDJ-E3 dg308b.pdf
DG308BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16DIP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG309CJ-E3 dg308a.pdf
DG309CJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST/CMOS 16DIP
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 883 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.33 EUR
10+ 6.6 EUR
25+ 6.24 EUR
100+ 5.4 EUR
250+ 5.13 EUR
500+ 4.6 EUR
DG641DY-E3 70058.pdf
DG641DY-E3
Hersteller: Vishay Siliconix
Description: IC VIDEO SWITCH SPDT 16DSOIC
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 15Ohm
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 19pC
-3db Bandwidth: 500MHz
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
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Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
DG642DY-E3 70058.pdf
DG642DY-E3
Hersteller: Vishay Siliconix
Description: IC VIDEO SWITCH SPDT 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 5MHz
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Charge Injection: 40pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 500mOhm
On-State Resistance (Max): 8Ohm
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Lieferzeit 21-28 Tag (e)
DG442DJ-E3 dg441.pdf
DG442DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1850 Stücke - Preis und Lieferfrist anzeigen
4+ 7.67 EUR
10+ 6.9 EUR
25+ 6.52 EUR
DG403DJ-E3 dg401.pdf
DG403DJ-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 10pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG409DY-E3 техническая информация dg408.pdf
DG409DY-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG411HSDY-E3 dg411hs.pdf
DG411HSDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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Lieferzeit 21-28 Tag (e)
DG403DY-E3 dg401.pdf
DG403DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 34V
Voltage - Supply, Dual (V±): ±5V ~ 17V
Charge Injection: 60pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG405DY-E3 dg401.pdf
DG405DY-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16SOIC
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 45Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Part Status: Active
Packaging: Tube
Base Part Number: DG405
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
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Lieferzeit 21-28 Tag (e)
DG403BDJ-E3 73069.pdf
DG403BDJ-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16DIP
Base Part Number: DG403
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -94.8dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG412HSDJ-E3 dg411hs.pdf
DG412HSDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
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DG411HSDJ-E3 dg411hs.pdf
DG411HSDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG406DJ-E3 dg406.pdf
DG406DJ-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 28-DIP
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 16:1
Number of Circuits: 1
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Charge Injection: 15pC
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Base Part Number: DG406
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG407DJ-E3 dg406.pdf
DG407DJ-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 28DIP
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Base Part Number: DG407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TP0610K-T1-GE3 tp0610k.pdf
TP0610K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA TO-236
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
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SI4488DY-T1-E3 71240.pdf
SI4488DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
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SIP12501DMP-T1-E3 sip12501.pdf
Hersteller: Vishay Siliconix
Description: IC BOOST REG PWM PPAK MLP33-6
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Voltage - Output: 3.5 V ~ 5 V
Voltage - Supply: 0.65 V ~ 3.3 V
Frequency: 425kHz ~ 775kHz
Type - Secondary: White LED
Type - Primary: Backlight
Internal Driver: Yes
Number of Outputs: 1
Topology: PWM, Step-Up (Boost)
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PowerPAK® MLP33-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6954ADQ-T1-E3 71130.pdf
SI6954ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI6954
Supplier Device Package: 8-TSSOP
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SIC413CB-T1-E3 sic413.pdf
SIC413CB-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.75V
Voltage - Input (Max): 26V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 13.2V
Current - Output: 4A
Frequency - Switching: 500kHz
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4590DY-T1-GE3 si4590dy.pdf
SI4590DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 100V SO8 DUAL
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Drain to Source Voltage (Vdss): 100V
FET Type: N and P-Channel
Power - Max: 2.4W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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8671602EA
Hersteller: Vishay Siliconix
Description: MOSFET
Manufacturer: Vishay Siliconix
Packaging: Bulk
Part Status: Obsolete
Base Part Number: 867160
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS73DN-T1-GE3 siss73dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V PP 1212-8
Part Status: Active
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SI7460DP-T1-E3 si7460dp.pdf
SI7460DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
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SI1013R-T1-GE3 71167.pdf
SI1013R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1013
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SI1013R-T1-GE3 71167.pdf
SI1013R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1013
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SI1032X-T1-GE3 si1032r.pdf
SI1032X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 200MA SC89-3
Base Part Number: SI1032
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1032X-T1-GE3 si1032r.pdf
SI1032X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 200MA SC89-3
Base Part Number: SI1032
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TP0610K-T1-E3 tp0610k.pdf
TP0610K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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TP0610K-T1-E3 tp0610k.pdf
TP0610K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 3159 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14929 Stücke - Preis und Lieferfrist anzeigen
SI1300BDL-T1-E3 si1300bd.pdf
SI1300BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 400MA SOT323-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1304BDL-T1-E3 si1304bd.pdf
SI1304BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
Vgs (Max): ±12V
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1013X-T1-GE3 71167.pdf
SI1013X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22703 Stücke - Preis und Lieferfrist anzeigen
SI1013X-T1-GE3 71167.pdf
SI1013X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
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Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
SI1300BDL-T1-GE3 si1300bd.pdf
SI1300BDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 400MA SC-70-3
Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8810EDB-T2-E1 si8810edb.pdf
SI8810EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Part Number: SI8810
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1302DL-T1-E3 71249.pdf
SI1302DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1302
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
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Lieferzeit 21-28 Tag (e)
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SI1302DL-T1-E3 71249.pdf
SI1302DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1302
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
auf Bestellung 18508 Stücke
Lieferzeit 21-28 Tag (e)
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SI1403BDL-T1-E3 si1403bdl.pdf
SI1403BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 568mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5363 Stücke - Preis und Lieferfrist anzeigen
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