Die Produkte vishay siliconix

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SI7216DN-T1-GE3 SI7216DN-T1-GE3 si7216dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7216
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 20.8W
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Power - Max: 20.8W
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
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SI4511DY-T1-GE3 SI4511DY-T1-GE3 72223.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 7.2A 8-SOIC
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
SI7214DN-T1-E3 SI7214DN-T1-E3 si7214dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4.6A 1212-8
Base Part Number: SI7214
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7938DP-T1-GE3 SI7938DP-T1-GE3 si7938dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 60A PPAK SO-8
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 60A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4944DY-T1-E3 SI4944DY-T1-E3 72512.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4569DY-T1-E3 SI4569DY-T1-E3 73586.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
FET Type: N and P-Channel
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7980DP-T1-GE3 SI7980DP-T1-GE3 si7980dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
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Vishay Siliconix Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Half Bridge)
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SI8901EDB-T2-E1 SI8901EDB-T2-E1 72941.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 3.5A 6-MFP
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual) Common Drain
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT®CSP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Vgs(th) (Max) @ Id: 1V @ 350µA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6924AEDQ-T1-GE3 SI6924AEDQ-T1-GE3 72215.pdf Vishay Siliconix Description: MOSFET 2N-CH 28V 4.1A 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6981DQ-T1-E3 SI6981DQ-T1-E3 si6981dq.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6981
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6981DQ-T1-GE3 SI6981DQ-T1-GE3 si6981dq.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 300µA
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4816BDY-T1-E3 SI4816BDY-T1-E3 si4816bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2060 Stücke - Preis und Lieferfrist anzeigen
SI7913DN-T1-GE3 SI7913DN-T1-GE3 72615.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
auf Bestellung 7489 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
auf Bestellung 7489 Stücke
Lieferzeit 21-28 Tag (e)
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 si4816bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7913DN-T1-E3 SI7913DN-T1-E3 72615.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 5A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET 2P-CH 20V 5A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
auf Bestellung 3123 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET 2P-CH 20V 5A 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
auf Bestellung 3123 Stücke
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SI7949DP-T1-E3 SI7949DP-T1-E3 73130.pdf Vishay Siliconix Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 7693 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 7693 Stücke
Lieferzeit 21-28 Tag (e)
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SI7940DP-T1-GE3 SI7940DP-T1-GE3 71845.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6928DQ-T1-E3 SI6928DQ-T1-E3 70663.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4A 8TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6928
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 65466 Stücke - Preis und Lieferfrist anzeigen
SI4943CDY-T1-GE3 SI4943CDY-T1-GE3 si4943cd.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 8A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Part Status: Active
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2P-CH 20V 8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
auf Bestellung 6059 Stücke
Lieferzeit 21-28 Tag (e)
SI7842DP-T1-E3 SI7842DP-T1-E3 71617.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.3A PPAK SO-8
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36518 Stücke - Preis und Lieferfrist anzeigen
SI7220DN-T1-GE3 SI7220DN-T1-GE3 73117.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 3.4A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 60V 3.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 1900 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 60V 3.4A 1212-8
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
auf Bestellung 2676 Stücke
Lieferzeit 21-28 Tag (e)
SI4966DY-T1-E3 SI4966DY-T1-E3 si4966dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59000 Stücke - Preis und Lieferfrist anzeigen
SI4920DY-T1-E3 SI4920DY-T1-E3 70667.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 162518 Stücke - Preis und Lieferfrist anzeigen
SI7922DN-T1-E3 SI7922DN-T1-E3 72031.pdf Vishay Siliconix Description: MOSFET 2N-CH 100V 1.8A 1212-8
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7922
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38698 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2N-CH 100V 1.8A 1212-8
Base Part Number: SI7922
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3088 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38698 Stücke - Preis und Lieferfrist anzeigen
SI4330DY-T1-E3 SI4330DY-T1-E3 si4330dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Base Part Number: SI4330
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 189500 Stücke - Preis und Lieferfrist anzeigen
SI4204DY-T1-GE3 SI4204DY-T1-GE3 si4204dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 19.8A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4204
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5686 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2N-CH 20V 19.8A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4204
auf Bestellung 413 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5686 Stücke - Preis und Lieferfrist anzeigen
SI5504DC-T1-E3 SI5504DC-T1-E3 si5504dc.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 2.9A 1206-8
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 86740 Stücke - Preis und Lieferfrist anzeigen
SI6993DQ-T1-E3 SI6993DQ-T1-E3 72369.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 3.6A 8TSSOP
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
SI4943BDY-T1-E3 SI4943BDY-T1-E3 73073.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 166010 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
auf Bestellung 5553 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 166010 Stücke - Preis und Lieferfrist anzeigen
SI6913DQ-T1-E3 SI6913DQ-T1-E3 si6913dq.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
auf Bestellung 2133 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
auf Bestellung 4702 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SI4563DY-T1-E3 SI4563DY-T1-E3 si4563dy.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
SI4904DY-T1-E3 SI4904DY-T1-E3 si4904dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 8A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80000 Stücke - Preis und Lieferfrist anzeigen
SI4904DY-T1-GE3 SI4904DY-T1-GE3 si4904dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 8A 8-SOIC
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7706 Stücke - Preis und Lieferfrist anzeigen
SI4933DY-T1-E3 SI4933DY-T1-E3 71980.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 500µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35080 Stücke - Preis und Lieferfrist anzeigen
SI7945DP-T1-E3 SI7945DP-T1-E3 72090.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1064 Stücke - Preis und Lieferfrist anzeigen
SI7945DP-T1-GE3 SI7945DP-T1-GE3 72090.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7958DP-T1-E3 SI7958DP-T1-E3 si7958dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1518 Stücke - Preis und Lieferfrist anzeigen
SI7958DP-T1-GE3 SI7958DP-T1-GE3 si7958dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7216DN-T1-GE3 si7216dn.pdf
SI7216DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7216
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 20.8W
auf Bestellung 3199 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13509 Stücke - Preis und Lieferfrist anzeigen
SI7216DN-T1-GE3 si7216dn.pdf
SI7216DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Power - Max: 20.8W
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
auf Bestellung 10509 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6199 Stücke - Preis und Lieferfrist anzeigen
SI4511DY-T1-GE3 72223.pdf
SI4511DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
SI7214DN-T1-E3 si7214dn.pdf
SI7214DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Base Part Number: SI7214
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7938DP-T1-GE3 si7938dp.pdf
SI7938DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 60A PPAK SO-8
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 60A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13599 Stücke - Preis und Lieferfrist anzeigen
SI4944DY-T1-E3 72512.pdf
SI4944DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 233000 Stücke - Preis und Lieferfrist anzeigen
SI4569DY-T1-E3 73586.pdf
SI4569DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
FET Type: N and P-Channel
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 159150 Stücke - Preis und Lieferfrist anzeigen
SI7980DP-T1-GE3 si7980dp.pdf
SI7980DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 814370 Stücke - Preis und Lieferfrist anzeigen
SI7980DP-T1-GE3 si7980dp.pdf
SI7980DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
auf Bestellung 8085 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 806285 Stücke - Preis und Lieferfrist anzeigen
SI7980DP-T1-GE3 si7980dp.pdf
SI7980DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Half Bridge)
auf Bestellung 8085 Stücke
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SI8901EDB-T2-E1 72941.pdf
SI8901EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.5A 6-MFP
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual) Common Drain
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT®CSP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Vgs(th) (Max) @ Id: 1V @ 350µA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3640 Stücke - Preis und Lieferfrist anzeigen
SI6924AEDQ-T1-GE3 72215.pdf
SI6924AEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6981DQ-T1-E3 si6981dq.pdf
SI6981DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6981
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6981DQ-T1-GE3 si6981dq.pdf
SI6981DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 300µA
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4816BDY-T1-E3 si4816bd.pdf
SI4816BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2060 Stücke - Preis und Lieferfrist anzeigen
SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14978 Stücke - Preis und Lieferfrist anzeigen
SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
auf Bestellung 7489 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13489 Stücke - Preis und Lieferfrist anzeigen
SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
auf Bestellung 7489 Stücke
Lieferzeit 21-28 Tag (e)
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SI4816BDY-T1-GE3 si4816bd.pdf
SI4816BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2325 Stücke - Preis und Lieferfrist anzeigen
SI7913DN-T1-E3 72615.pdf
SI7913DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13884 Stücke - Preis und Lieferfrist anzeigen
SI7913DN-T1-E3 72615.pdf
SI7913DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
auf Bestellung 3123 Stücke
Lieferzeit 21-28 Tag (e)
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SI7913DN-T1-E3 72615.pdf
SI7913DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
auf Bestellung 3123 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13761 Stücke - Preis und Lieferfrist anzeigen
SI7949DP-T1-E3 73130.pdf
SI7949DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15904 Stücke - Preis und Lieferfrist anzeigen
SI7949DP-T1-E3 73130.pdf
SI7949DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 7693 Stücke
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SI7949DP-T1-E3 73130.pdf
SI7949DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 7693 Stücke
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SI7940DP-T1-GE3 71845.pdf
SI7940DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6928DQ-T1-E3 70663.pdf
SI6928DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6928
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4943CDY-T1-GE3 si4943cd.pdf
SI4943CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Part Status: Active
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4943CDY-T1-GE3 si4943cd.pdf
SI4943CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
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Lieferzeit 21-28 Tag (e)
SI7842DP-T1-E3 71617.pdf
SI7842DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO-8
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7220DN-T1-GE3 73117.pdf
SI7220DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7220DN-T1-GE3 73117.pdf
SI7220DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 1900 Stücke
Lieferzeit 21-28 Tag (e)
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SI7220DN-T1-GE3 73117.pdf
SI7220DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A 1212-8
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
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SI4966DY-T1-E3 si4966dy.pdf
SI4966DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4920DY-T1-E3 70667.pdf
SI4920DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7922DN-T1-E3 72031.pdf
SI7922DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7922
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
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SI7922DN-T1-E3 72031.pdf
SI7922DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Base Part Number: SI7922
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
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SI4330DY-T1-E3 si4330dy.pdf
SI4330DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Base Part Number: SI4330
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4204DY-T1-GE3 si4204dy.pdf
SI4204DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4204
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4204DY-T1-GE3 si4204dy.pdf
SI4204DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4204
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Lieferzeit 21-28 Tag (e)
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SI5504DC-T1-E3 si5504dc.pdf
SI5504DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6993DQ-T1-E3 72369.pdf
SI6993DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.6A 8TSSOP
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4943BDY-T1-E3 73073.pdf
SI4943BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4943BDY-T1-E3 73073.pdf
SI4943BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
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SI6913DQ-T1-E3 si6913dq.pdf
SI6913DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6913DQ-T1-E3 si6913dq.pdf
SI6913DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
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SI6913DQ-T1-E3 si6913dq.pdf
SI6913DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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SI4563DY-T1-E3 si4563dy.pdf
SI4563DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4904DY-T1-E3 si4904dy.pdf
SI4904DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4904DY-T1-GE3 si4904dy.pdf
SI4904DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8-SOIC
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4933DY-T1-E3 71980.pdf
SI4933DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 500µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7945DP-T1-E3 72090.pdf
SI7945DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7945DP-T1-GE3 72090.pdf
SI7945DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7958DP-T1-E3 si7958dp.pdf
SI7958DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7958DP-T1-GE3 si7958dp.pdf
SI7958DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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