Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SUM45N25-58-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 45A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 20788 Stücke Lieferzeit 21-28 Tag (e) |
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IRFR014TRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1834 Stücke Lieferzeit 21-28 Tag (e) |
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IRFZ24STRR |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A D2PAK Supplier Device Package: D²PAK (TO-263) Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFZ24STRL |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D²PAK (TO-263) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
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IRFZ24 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFZ24STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO263 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Part Status: Active Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIP12107DB |
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Vishay Siliconix |
Description: EVAL BOARD BUCK REG 5V 3A Regulator Topology: Buck Voltage - Input: 2.8V ~ 5.5V Current - Output: 3A Outputs and Type: 1, Non-Isolated Main Purpose: DC/DC, Step Down Utilized IC / Part: SiP12107 Supplied Contents: Board Board Type: Fully Populated |
auf Bestellung 3 Stücke Lieferzeit 21-28 Tag (e) |
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SIA928DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V POWERPAK SC70-6 Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 2.2V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 30V Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W FET Type: 2 N-Channel (Dual) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1515 Stücke - Preis und Lieferfrist anzeigen
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IRF530STRL |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRF530L |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A TO262 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-262 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRF530STRR |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRF530S |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
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IRF530 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A TO220AB Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 250 Stücke - Preis und Lieferfrist anzeigen
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IRF530STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
auf Bestellung 800 Stücke Lieferzeit 21-28 Tag (e) |
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IRF530STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Power Dissipation (Max): 3.7W (Ta), 88W (Tc) |
auf Bestellung 2240 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3512 Stücke - Preis und Lieferfrist anzeigen
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IRFP450NPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 430 Stücke - Preis und Lieferfrist anzeigen
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IRFP450LC |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Mounting Type: Through Hole Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Package / Case: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFP450A |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Drain to Source Voltage (Vdss): 500 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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IRFP450 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Package / Case: TO-247-3 Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Packaging: Tube Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
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IRFP450APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFP450PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 499 Stücke - Preis und Lieferfrist anzeigen
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SISS26LDN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
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| SST5486-E3 |
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Vishay Siliconix |
Description: JFET P-CH 35V 8MA SOT-23 Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SST5486-T1-E3 |
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Vishay Siliconix |
Description: JFET P-CH 35V 8MA SOT-23 Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1219 Stücke - Preis und Lieferfrist anzeigen
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SST204-E3 |
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Vishay Siliconix |
Description: JFET N-CH 25V .7MA SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Base Part Number: SST204 Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SST5484-E3 |
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Vishay Siliconix |
Description: JFET P-CH 35V 1MA SOT-23 Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Power - Max: 350 mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SST204-T1-E3 |
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Vishay Siliconix |
Description: JFET N-CH 25V 0.35W SOT-23 Base Part Number: SST204 Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V Voltage - Breakdown (V(BR)GSS): 25V FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2248 Stücke - Preis und Lieferfrist anzeigen
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| SST5462-T1-E3 |
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Vishay Siliconix |
Description: JFET P-CH 55V 4MA SOT-23 Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SST5484-T1-E3 |
|
Vishay Siliconix |
Description: JFET P-CH 35V 1MA SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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| SST5485-T1-E3 |
|
Vishay Siliconix |
Description: JFET P-CH 35V 4MA SOT-23 Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Packaging: Tape & Reel (TR) Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3002324 Stücke - Preis und Lieferfrist anzeigen
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| SST5485-E3 |
|
Vishay Siliconix |
Description: JFET P-CH 35V 4MA SOT-23 Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
SST5461-T1-E3 |
|
Vishay Siliconix |
Description: JFET P-CH 55V 2MA SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23 Voltage - Breakdown (V(BR)GSS): 40 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SST4416-E3 |
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Vishay Siliconix |
Description: JFET N-CH 36V 5MA SOT-23 Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Voltage - Breakdown (V(BR)GSS): 30V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SST4416-T1-E3 |
|
Vishay Siliconix |
Description: JFET N-CH 36V 5MA SOT-23 Power - Max: 350mW Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Voltage - Breakdown (V(BR)GSS): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45000 Stücke - Preis und Lieferfrist anzeigen
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SST201-T1-E3 |
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Vishay Siliconix |
Description: JFET N-CH 25V .7MA SOT-23 Base Part Number: SST201 Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SST174-E3 |
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Vishay Siliconix |
Description: JFET N-CH 30V 20MA SOT-23 Supplier Device Package: TO-236 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Resistance - RDS(On): 85 Ohms Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Voltage - Breakdown (V(BR)GSS): 30V FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SST174-T1-E3 |
|
Vishay Siliconix |
Description: JFET N-CH 30V 20MA SOT-23 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V Resistance - RDS(On): 85 Ohms Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SST4119-T1-E3 |
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Vishay Siliconix |
Description: JFET N-CH 70V 200UA SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 350mW Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: TO-236 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 69098 Stücke - Preis und Lieferfrist anzeigen
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SST4118-T1-E3 |
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Vishay Siliconix |
Description: JFET N-CH 70V 80UA SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 350mW Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: SOT-23 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 58000 Stücke - Preis und Lieferfrist anzeigen
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| 2N4392 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Power - Max: 1.8W Resistance - RDS(On): 60 Ohms Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6580 Stücke - Preis und Lieferfrist anzeigen
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| 2N4392-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Resistance - RDS(On): 60 Ohms Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1.8W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N4393 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Resistance - RDS(On): 100 Ohms Power - Max: 1.8 W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12546 Stücke - Preis und Lieferfrist anzeigen
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| 2N4393-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Resistance - RDS(On): 100 Ohms Power - Max: 1.8 W Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Voltage - Breakdown (V(BR)GSS): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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2N4416A |
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Vishay Siliconix |
Description: MOSFET N-CH 35V 5MA TO-206AF Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Voltage - Breakdown (V(BR)GSS): 35 V Part Status: Obsolete Power - Max: 300 mW Supplier Device Package: TO-206AF (TO-72) Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V FET Type: N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 38160 Stücke - Preis und Lieferfrist anzeigen
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2N4416A-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 35V 5MA TO-206AF Package / Case: TO-206AF, TO-72-4 Metal Can Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 35 V Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V FET Type: N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N4118A |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 80UA TO-206AF Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23732 Stücke - Preis und Lieferfrist anzeigen
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2N4118A-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 80UA TO-206AF Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N4119A |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 200UA TO-206AF Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N4119A-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 200UA TO-206AF Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N4416 |
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Vishay Siliconix |
Description: JFET N-CH 30V 0.3W TO-206AF Operating Temperature: -50°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-206AF (TO-72) Part Status: Obsolete Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N4416-E3 |
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Vishay Siliconix |
Description: JFET N-CH 30V 0.3W TO-206AF Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V FET Type: N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| 2N4338 |
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Vishay Siliconix |
Description: MOSFET N-CH 50V 600UA TO-206AA Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA Supplier Device Package: TO-206AA (TO-18) Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V Voltage - Breakdown (V(BR)GSS): 50V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11754 Stücke - Preis und Lieferfrist anzeigen
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| 2N4338-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 50V 600UA TO-206AA Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V Voltage - Breakdown (V(BR)GSS): 50V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Power - Max: 300mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N4339 |
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Vishay Siliconix |
Description: MOSFET N-CH 50V 1.5MA TO-206AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V Voltage - Breakdown (V(BR)GSS): 50V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7747 Stücke - Preis und Lieferfrist anzeigen
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| 2N4339-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 50V 1.5MA TO-206AA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V Voltage - Breakdown (V(BR)GSS): 50V FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Power - Max: 300mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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2N4117A |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 30UA TO-206AF Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18165 Stücke - Preis und Lieferfrist anzeigen
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2N4117A-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 30UA TO-206AF Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Packaging: Bulk Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AF (TO-72) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| 2N5432 |
|
Vishay Siliconix |
Description: JFET N-CH 25V TO-52 Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V Voltage - Breakdown (V(BR)GSS): 25V Power - Max: 300mW Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20697 Stücke - Preis und Lieferfrist anzeigen
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| 2N5432-E3 |
|
Vishay Siliconix |
Description: JFET N-CH 25V TO-52 Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Power - Max: 300mW Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V Voltage - Breakdown (V(BR)GSS): 25V Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N5433 |
|
Vishay Siliconix |
Description: JFET N-CH 25V 0.3W TO-52 Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V Voltage - Breakdown (V(BR)GSS): 25V FET Type: N-Channel Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20489 Stücke - Preis und Lieferfrist anzeigen
|
||
| 2N5433-E3 |
|
Vishay Siliconix |
Description: JFET N-CH 25V 0.3W TO-52 Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V Voltage - Breakdown (V(BR)GSS): 25V FET Type: N-Channel Part Status: Obsolete Packaging: Tube Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can Supplier Device Package: TO-206AC (TO-52) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N5114 |
|
Vishay Siliconix |
Description: JFET P-CH 30V TO-206AA Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5524 Stücke - Preis und Lieferfrist anzeigen
|
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| 2N5114-E3 | Vishay Siliconix |
Description: JFET P-CH 30V TO-206AA Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| U290 |
|
Vishay Siliconix |
Description: JFET N-CH 30V 0.5W TO-206AC Power - Max: 500mW Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Resistance - RDS(On): 3 Ohm Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V Voltage - Breakdown (V(BR)GSS): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3694 Stücke - Preis und Lieferfrist anzeigen
|
||
| U290-E3 |
|
Vishay Siliconix |
Description: JFET N-CH 30V 0.5W TO-206AC Power - Max: 500mW Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Resistance - RDS(On): 3 Ohm Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V Voltage - Breakdown (V(BR)GSS): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| U291 |
|
Vishay Siliconix |
Description: JFET N-CH 30V 0.5W TO-206AC Power - Max: 500mW Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Resistance - RDS(On): 7 Ohm Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V Voltage - Breakdown (V(BR)GSS): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3237 Stücke - Preis und Lieferfrist anzeigen
|
||
| U291-E3 |
|
Vishay Siliconix |
Description: JFET N-CH 30V 0.5W TO-206AC Power - Max: 500mW Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Resistance - RDS(On): 7 Ohm Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V Voltage - Breakdown (V(BR)GSS): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| U310-E3 |
|
Vishay Siliconix |
Description: JFET P-CH 25V TO-52 Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Power - Max: 500 mW Part Status: Obsolete Supplier Device Package: TO-206AC (TO-52) Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 564 Stücke - Preis und Lieferfrist anzeigen
|
||
| U430 |
|
Vishay Siliconix |
Description: JFET P-CH 25V TO-78 Packaging: Tube Package / Case: TO-78-6 Metal Can Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-78-6 Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2006795 Stücke - Preis und Lieferfrist anzeigen
|
||
| U430-E3 |
|
Vishay Siliconix |
Description: JFET DUAL P-CH 25V TO-78 Packaging: Tube Package / Case: TO-78-6 Metal Can Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-78-6 Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| U431 |
|
Vishay Siliconix |
Description: JFET DUAL P-CH 25V TO-78 Part Status: Obsolete Supplier Device Package: TO-78-6 Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V FET Type: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Tube Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Power - Max: 500 mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6237 Stücke - Preis und Lieferfrist anzeigen
|
||
| U440 |
|
Vishay Siliconix |
Description: JFET DUAL P-CH 25V TO-71 Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5797 Stücke - Preis und Lieferfrist anzeigen
|
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| U440-E3 |
|
Vishay Siliconix |
Description: JFET DUAL P-CH 25V TO-71 Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| U441 |
|
Vishay Siliconix |
Description: JFET 2N-CH 25V TO-71 Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1759 Stücke - Preis und Lieferfrist anzeigen
|
||
| U441-E3 |
|
Vishay Siliconix |
Description: JFET 2N-CH 25V TO-71 Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N5545JTX01 | Vishay Siliconix |
Description: JFET N-CH 50V TO-71 Supplier Device Package: TO-71 Package / Case: TO-71-6 Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4856JAN02 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50MA TO-18 Part Status: Obsolete Packaging: Bulk Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4857JAN02 | Vishay Siliconix |
Description: JFET N-CH 40V 360MA TO-18 Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18) Base Part Number: 2N4857 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4858JAN02 | Vishay Siliconix |
Description: JFET N-CH 40V 80MA TO-18 Part Status: Obsolete Packaging: Tube Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4859JAN02 |
|
Vishay Siliconix |
Description: JFET N-CH 30V 360MW TO-18 Part Status: Obsolete Packaging: Tube Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N4860JAN02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4860 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Packaging: Tube Part Status: Obsolete Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N5547JTX01 | Vishay Siliconix |
Description: JFET N-CH 50V TO-71 Supplier Device Package: TO-71 Package / Case: TO-71-6 Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4860JTX02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4860 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4861JTX02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4861 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4861JAN02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4861 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
|
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| 2N4860JTXL02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4860 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4861JTXL02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4861 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N5547JTXL01 | Vishay Siliconix |
Description: JFET N-CH 50V TO-71 Part Status: Obsolete Packaging: Tube Supplier Device Package: TO-71 Package / Case: TO-71-6 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N5547JTXV01 | Vishay Siliconix |
Description: JFET N-CH 50V TO-71 Package / Case: TO-71-6 Mounting Type: Through Hole Part Status: Obsolete Supplier Device Package: TO-71 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
|
|
2N4416A-2 |
|
Vishay Siliconix |
Description: MOSFET N-CH 35V 5MA TO-206AF Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Power - Max: 300 mW Supplier Device Package: TO-206AF (TO-72) Part Status: Obsolete Voltage - Breakdown (V(BR)GSS): 35 V Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V FET Type: N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| 2N5432-2 |
|
Vishay Siliconix |
Description: JFET N-CH 25V 0.3W TO-52 Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V Voltage - Breakdown (V(BR)GSS): 25V FET Type: N-Channel Part Status: Obsolete Packaging: Tube Supplier Device Package: TO-206AC (TO-52) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N5433-2 |
|
Vishay Siliconix |
Description: JFET N-CH 25V 0.3W TO-52 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V Voltage - Breakdown (V(BR)GSS): 25V FET Type: N-Channel Part Status: Obsolete Packaging: Tube Supplier Device Package: TO-206AC (TO-52) Package / Case: TO-206AC, TO-52-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N4391 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V FET Type: N-Channel Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Supplier Device Package: TO-206AA (TO-18) Part Status: Obsolete Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Power - Max: 1.8 W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33313 Stücke - Preis und Lieferfrist anzeigen
|
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| 2N4391-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Power - Max: 1.8 W Part Status: Obsolete Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Supplier Device Package: TO-206AA (TO-18) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1016000 Stücke - Preis und Lieferfrist anzeigen
|
||
| 2N4860JTXV02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4860 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4861JTXV02 | Vishay Siliconix |
Description: JFET N-CH 30V TO-206 Base Part Number: 2N4861 Supplier Device Package: TO-206AA (TO-18) Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 2N4391-2 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V .1NA TO-18 Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Resistance - RDS(On): 30 Ohms Power - Max: 1.8 W Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Packaging: Bulk Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N4856JTX02 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50MA TO-18 Packaging: Tube Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Supplier Device Package: TO-206AA (TO-18) Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| SUM45N25-58-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 20788 Stücke Description: MOSFET N-CH 250V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
| IRFR014TRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1834 Stücke Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| IRFZ24STRR |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 17A D2PAK
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
| IRFZ24STRL |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 17A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
| IRFZ24 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
| IRFZ24STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Part Status: Active
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 17A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Part Status: Active
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
| SIP12107DB |
|
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG 5V 3A
Regulator Topology: Buck
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Utilized IC / Part: SiP12107
Supplied Contents: Board
Board Type: Fully Populated
auf Bestellung 3 Stücke Description: EVAL BOARD BUCK REG 5V 3A
Regulator Topology: Buck
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Utilized IC / Part: SiP12107
Supplied Contents: Board
Board Type: Fully Populated
Lieferzeit 21-28 Tag (e)
| SIA928DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V POWERPAK SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Packaging: Tape & Reel (TR)
auf Bestellung 1515 Stücke - Preis und Lieferfrist anzeigen
| IRF530STRL |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| IRF530L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO262
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 14A TO262
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262
| IRF530STRR |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| IRF530S |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
| IRF530 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 14A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 250 Stücke - Preis und Lieferfrist anzeigen
| IRF530STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
auf Bestellung 800 Stücke Description: MOSFET N-CH 100V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Lieferzeit 21-28 Tag (e)
| IRF530STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
auf Bestellung 2240 Stücke Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3512 Stücke - Preis und Lieferfrist anzeigen
| IRFP450NPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 14A TO247-3
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 430 Stücke - Preis und Lieferfrist anzeigen
| IRFP450LC |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
| IRFP450A | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 14A TO247-3
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| IRFP450 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
| IRFP450APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| IRFP450PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 14A TO247-3
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
auf Bestellung 499 Stücke - Preis und Lieferfrist anzeigen
| SISS26LDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 23.7A/81.2A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
| SST5486-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 35V 8MA SOT-23
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 35V 8MA SOT-23
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
| SST5486-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 35V 8MA SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 35V 8MA SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 1219 Stücke - Preis und Lieferfrist anzeigen
| SST204-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V .7MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
| SST5484-E3 | |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 35V 1MA SOT-23
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 35V 1MA SOT-23
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
| SST204-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V 0.35W SOT-23
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V 0.35W SOT-23
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 2248 Stücke - Preis und Lieferfrist anzeigen
| SST5462-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 55V 4MA SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 55V 4MA SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| SST5484-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 35V 1MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 35V 1MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SST5485-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 35V 4MA SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Packaging: Tape & Reel (TR)
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 35V 4MA SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Packaging: Tape & Reel (TR)
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 3002324 Stücke - Preis und Lieferfrist anzeigen
| SST5485-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 35V 4MA SOT-23
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 35V 4MA SOT-23
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
| SST5461-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 55V 2MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 55V 2MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
| SST4416-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 36V 5MA SOT-23
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 36V 5MA SOT-23
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
| SST4416-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 36V 5MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 36V 5MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
auf Bestellung 45000 Stücke - Preis und Lieferfrist anzeigen
| SST201-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
Base Part Number: SST201
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V .7MA SOT-23
Base Part Number: SST201
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SST174-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 20MA SOT-23
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Resistance - RDS(On): 85 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 20MA SOT-23
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Resistance - RDS(On): 85 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SST174-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 20MA SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Resistance - RDS(On): 85 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 20MA SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Resistance - RDS(On): 85 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SST4119-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 70V 200UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-236
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 70V 200UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-236
auf Bestellung 69098 Stücke - Preis und Lieferfrist anzeigen
| SST4118-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 70V 80UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 70V 80UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
auf Bestellung 58000 Stücke - Preis und Lieferfrist anzeigen
| 2N4392 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 1.8W
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 1.8W
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 6580 Stücke - Preis und Lieferfrist anzeigen
| 2N4392-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.8W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.8W
| 2N4393 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
auf Bestellung 12546 Stücke - Preis und Lieferfrist anzeigen
| 2N4393-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
| 2N4416A |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 35V 5MA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Voltage - Breakdown (V(BR)GSS): 35 V
Part Status: Obsolete
Power - Max: 300 mW
Supplier Device Package: TO-206AF (TO-72)
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 35V 5MA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Voltage - Breakdown (V(BR)GSS): 35 V
Part Status: Obsolete
Power - Max: 300 mW
Supplier Device Package: TO-206AF (TO-72)
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
auf Bestellung 38160 Stücke - Preis und Lieferfrist anzeigen
| 2N4416A-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 35V 5MA TO-206AF
Package / Case: TO-206AF, TO-72-4 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 35 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 35V 5MA TO-206AF
Package / Case: TO-206AF, TO-72-4 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 35 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Bulk
| 2N4118A |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80UA TO-206AF
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 80UA TO-206AF
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
auf Bestellung 23732 Stücke - Preis und Lieferfrist anzeigen
| 2N4118A-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80UA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 80UA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
| 2N4119A |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200UA TO-206AF
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 200UA TO-206AF
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
| 2N4119A-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200UA TO-206AF
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 200UA TO-206AF
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
| 2N4416 | |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.3W TO-206AF
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 0.3W TO-206AF
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
| 2N4416-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.3W TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 0.3W TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
| 2N4338 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 600UA TO-206AA
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Supplier Device Package: TO-206AA (TO-18)
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 50V 600UA TO-206AA
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Supplier Device Package: TO-206AA (TO-18)
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 11754 Stücke - Preis und Lieferfrist anzeigen
| 2N4338-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 600UA TO-206AA
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 50V 600UA TO-206AA
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
| 2N4339 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 1.5MA TO-206AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 50V 1.5MA TO-206AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
auf Bestellung 7747 Stücke - Preis und Lieferfrist anzeigen
| 2N4339-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 1.5MA TO-206AA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 50V 1.5MA TO-206AA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
| 2N4117A |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30UA TO-206AF
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 30UA TO-206AF
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
auf Bestellung 18165 Stücke - Preis und Lieferfrist anzeigen
| 2N4117A-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30UA TO-206AF
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 30UA TO-206AF
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
| 2N5432 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
auf Bestellung 20697 Stücke - Preis und Lieferfrist anzeigen
| 2N5432-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
| 2N5433 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V 0.3W TO-52
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
auf Bestellung 20489 Stücke - Preis und Lieferfrist anzeigen
| 2N5433-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V 0.3W TO-52
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)
| 2N5114 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
auf Bestellung 5524 Stücke - Preis und Lieferfrist anzeigen
| 2N5114-E3 |
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
| U290 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
auf Bestellung 3694 Stücke - Preis und Lieferfrist anzeigen
| U290-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
| U291 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
auf Bestellung 3237 Stücke - Preis und Lieferfrist anzeigen
| U291-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
| U310-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 25V TO-52
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: TO-206AC (TO-52)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 25V TO-52
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: TO-206AC (TO-52)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Packaging: Tube
auf Bestellung 564 Stücke - Preis und Lieferfrist anzeigen
| U430 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
auf Bestellung 2006795 Stücke - Preis und Lieferfrist anzeigen
| U430-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET DUAL P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
| U431 |
|
Hersteller: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-78
Part Status: Obsolete
Supplier Device Package: TO-78-6
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Tube
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 500 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET DUAL P-CH 25V TO-78
Part Status: Obsolete
Supplier Device Package: TO-78-6
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Tube
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 500 mW
auf Bestellung 6237 Stücke - Preis und Lieferfrist anzeigen
| U440 |
|
Hersteller: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 5797 Stücke - Preis und Lieferfrist anzeigen
| U440-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
| U441 |
|
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 1759 Stücke - Preis und Lieferfrist anzeigen
| U441-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
| 2N5545JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
| 2N4856JAN02 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50MA TO-18
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50MA TO-18
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
| 2N4857JAN02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 40V 360MA TO-18
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Base Part Number: 2N4857
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 40V 360MA TO-18
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Base Part Number: 2N4857
| 2N4858JAN02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 40V 80MA TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 40V 80MA TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
| 2N4859JAN02 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V 360MW TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V 360MW TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
| 2N4860JAN02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Packaging: Tube
Part Status: Obsolete
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Packaging: Tube
Part Status: Obsolete
Manufacturer: Vishay Siliconix
| 2N5547JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
| 2N4860JTX02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N4861JTX02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N4861JAN02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| 2N4860JTXL02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N4861JTXL02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N5547JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 50V TO-71
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
| 2N5547JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Supplier Device Package: TO-71
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 50V TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Supplier Device Package: TO-71
Packaging: Tube
| 2N4416A-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 35V 5MA TO-206AF
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Voltage - Breakdown (V(BR)GSS): 35 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 35V 5MA TO-206AF
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Voltage - Breakdown (V(BR)GSS): 35 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Packaging: Bulk
| 2N5432-2 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V 0.3W TO-52
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
| 2N5433-2 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 25V 0.3W TO-52
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
| 2N4391 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Power - Max: 1.8 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Power - Max: 1.8 W
auf Bestellung 33313 Stücke - Preis und Lieferfrist anzeigen
| 2N4391-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Power - Max: 1.8 W
Part Status: Obsolete
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Power - Max: 1.8 W
Part Status: Obsolete
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
auf Bestellung 1016000 Stücke - Preis und Lieferfrist anzeigen
| 2N4860JTXV02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N4861JTXV02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N4391-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Packaging: Bulk
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V .1NA TO-18
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Packaging: Bulk
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
| 2N4856JTX02 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50MA TO-18
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50MA TO-18
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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