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SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix siz704dt.pdf Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3077 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
13+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
DG429DN DG429DN Vishay Siliconix 70063.pdf Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 SI2336DS-T1-GE3 Vishay Siliconix si2336ds.pdf Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix sir640dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix sir640dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 SIR870DP-T1-GE3 Vishay Siliconix sir870dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
Produkt ist nicht verfügbar
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix si5999ed.pdf Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Vishay Siliconix sia429dj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 109588 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 109588 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
SI2336DS-T1-GE3 SI2336DS-T1-GE3 Vishay Siliconix si2336ds.pdf Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 SIR870DP-T1-GE3 Vishay Siliconix sir870dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.95 EUR
10+ 5.35 EUR
100+ 4.3 EUR
500+ 3.53 EUR
Mindestbestellmenge: 5
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix si5999ed.pdf Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix si5999ed.pdf Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Vishay Siliconix sia429dj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIHW30N60E-GE3 SIHW30N60E-GE3 Vishay Siliconix SiHW30N60E.pdf Description: MOSFET N-CH 600V 29A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.79 EUR
10+ 12.41 EUR
100+ 10.04 EUR
Mindestbestellmenge: 2
SIHG33N60E-GE3 SIHG33N60E-GE3 Vishay Siliconix sihg33n60e.pdf Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Produkt ist nicht verfügbar
SIHW33N60E-GE3 SIHW33N60E-GE3 Vishay Siliconix sihw33n60e.pdf Description: MOSFET N-CH 600V 33A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.42 EUR
10+ 12.95 EUR
480+ 9.31 EUR
Mindestbestellmenge: 2
SIHW47N60E-GE3 SIHW47N60E-GE3 Vishay Siliconix SiHW47N60E.pdf Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.49 EUR
Mindestbestellmenge: 2
DG9409DN-T1-E4 DG9409DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 7406 Stücke:
Lieferzeit 21-28 Tag (e)
DG9431DY-T1-E3 DG9431DY-T1-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 8SOIC
auf Bestellung 3341 Stücke:
Lieferzeit 21-28 Tag (e)
DG9461DV-T1-E3 DG9461DV-T1-E3 Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 6TSOP
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix si4404dy.pdf Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 Si4412ADY-T1-E3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI1307DL-T1-E3 SI1307DL-T1-E3 Vishay Siliconix si1307dl.pdf Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1405DL-T1-E3 SI1405DL-T1-E3 Vishay Siliconix si1405dl.pdf Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
SI3445ADV-T1-E3 SI3445ADV-T1-E3 Vishay Siliconix 72859.pdf Description: MOSFET P-CH 8V 4.4A 6-TSOP
Produkt ist nicht verfügbar
DG201BDY-E3 DG201BDY-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 8059 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.34 EUR
10+ 5.69 EUR
50+ 5.37 EUR
100+ 4.57 EUR
250+ 4.29 EUR
500+ 3.76 EUR
1000+ 3.11 EUR
2500+ 2.9 EUR
5000+ 2.79 EUR
Mindestbestellmenge: 5
DG202BDQ-T1-E3 DG202BDQ-T1-E3 Vishay Siliconix dg201b.pdf Description: IC SW SPST-NOX4 85OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
auf Bestellung 21255 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.92 EUR
10+ 6.22 EUR
25+ 5.86 EUR
100+ 5 EUR
250+ 4.69 EUR
500+ 4.11 EUR
1000+ 3.4 EUR
Mindestbestellmenge: 4
DG202BDY-T1-E3 DG202BDY-T1-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
auf Bestellung 4402 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.5 EUR
10+ 5.85 EUR
25+ 5.52 EUR
100+ 4.7 EUR
250+ 4.42 EUR
500+ 3.86 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 4
DG308BDY-T1-E3 DG308BDY-T1-E3 Vishay Siliconix DG308B%2CDG309B.pdf Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4V ~ 44V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 1981 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.99 EUR
10+ 6.28 EUR
25+ 5.92 EUR
100+ 5.05 EUR
250+ 4.74 EUR
500+ 4.15 EUR
1000+ 3.44 EUR
Mindestbestellmenge: 4
DG409LDQ-T1-E3 DG409LDQ-T1-E3 Vishay Siliconix DG408L,409L.pdf Description: IC SWITCH SP4T X 2 29OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 29Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -82dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
DG419LDY-T1-E3 DG419LDY-T1-E3 Vishay Siliconix dg417l.pdf Description: IC SWITCH SPDT X 1 20OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG9409DN-T1-E4 DG9409DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 7406 Stücke:
Lieferzeit 21-28 Tag (e)
DG9431DY-T1-E3 DG9431DY-T1-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 8SOIC
auf Bestellung 3341 Stücke:
Lieferzeit 21-28 Tag (e)
SIP21106DR-18-E3 SIP21106DR-18-E3 Vishay Siliconix sip21106.pdf Description: IC REG LINEAR 1.8V 150MA SC70-5
Produkt ist nicht verfügbar
SI7218DN-T1-E3 SI7218DN-T1-E3 Vishay Siliconix si7218dn.pdf Description: MOSFET 2N-CH 30V 24A 1212-8
auf Bestellung 712 Stücke:
Lieferzeit 21-28 Tag (e)
Si9933CDY-T1-E3 Si9933CDY-T1-E3 Vishay Siliconix si9933cdy.pdf Description: MOSFET 2P-CH 20V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10255 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
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100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 18
SI9936BDY-T1-E3 SI9936BDY-T1-E3 Vishay Siliconix si9936bd.pdf Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 Vishay Siliconix si9945bdy.pdf Description: MOSFET 2N-CH 60V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 48062 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
16+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 13
IRF530STRLPBF IRF530STRLPBF Vishay Siliconix sihf530s.pdf Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 4877 Stücke:
Lieferzeit 21-28 Tag (e)
7+4 EUR
10+ 3.32 EUR
100+ 2.64 EUR
Mindestbestellmenge: 7
IRF630STRLPBF IRF630STRLPBF Vishay Siliconix sih630s.pdf Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1583 Stücke:
Lieferzeit 21-28 Tag (e)
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IRFBC40STRLPBF IRFBC40STRLPBF Vishay Siliconix Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.27 EUR
10+ 8.63 EUR
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IRFS9N60ATRLPBF IRFS9N60ATRLPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.35 EUR
10+ 7.01 EUR
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IRL540STRLPBF IRL540STRLPBF Vishay Siliconix sihl540s.pdf Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.15 EUR
10+ 5.94 EUR
100+ 4.72 EUR
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SI4100DY-T1-E3 SI4100DY-T1-E3 Vishay Siliconix si4100dy.pdf Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
auf Bestellung 30752 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.04 EUR
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SI4128DY-T1-GE3 SI4128DY-T1-GE3 Vishay Siliconix si4128dy-old.pdf Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 4058 Stücke:
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18+1.46 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
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SI7228DN-T1-GE3 SI7228DN-T1-GE3 Vishay Siliconix si7228dn.pdf Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
Produkt ist nicht verfügbar
SI7336ADP-T1-GE3 SI7336ADP-T1-GE3 Vishay Siliconix si7336adp.pdf Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 11830 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.11 EUR
10+ 3.41 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 7
SI7848BDP-T1-E3 SI7848BDP-T1-E3 Vishay Siliconix si7848bdp.pdf Description: MOSFET N-CH 40V 47A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 36547 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.03 EUR
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100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
Si7860DP-T1-E3 Si7860DP-T1-E3 Vishay Siliconix 71854.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7868ADP-T1-E3 SI7868ADP-T1-E3 Vishay Siliconix 73384.pdf Description: MOSFET N-CH 20V 40A PPAK SO-8
auf Bestellung 1994 Stücke:
Lieferzeit 21-28 Tag (e)
SI7880ADP-T1-E3 SI7880ADP-T1-E3 Vishay Siliconix si7880adp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
auf Bestellung 1390 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.75 EUR
10+ 10.57 EUR
100+ 8.66 EUR
500+ 7.37 EUR
1000+ 6.66 EUR
Mindestbestellmenge: 3
SI7884BDP-T1-E3 SI7884BDP-T1-E3 Vishay Siliconix si7884bd.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.66 EUR
10+ 5.6 EUR
100+ 4.52 EUR
500+ 4.02 EUR
1000+ 3.44 EUR
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SIS434DN-T1-GE3 SIS434DN-T1-GE3 Vishay Siliconix sis434dn.pdf Description: MOSFET N-CH 40V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 1677 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.24 EUR
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100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.98 EUR
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SUD15N15-95-E3 SUD15N15-95-E3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 14352 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.1 EUR
10+ 4.22 EUR
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500+ 2.84 EUR
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SUD23N06-31L-E3 SUD23N06-31L-E3 Vishay Siliconix sud23n06.pdf Description: MOSFET N-CH 60V TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD35N05-26L-E3 SUD35N05-26L-E3 Vishay Siliconix sud35n05.pdf Description: MOSFET N-CH 55V 35A TO252
Produkt ist nicht verfügbar
SUD40N04-10A-E3 SUD40N04-10A-E3 Vishay Siliconix 71420.pdf Description: MOSFET N-CH 40V 40A TO252
Produkt ist nicht verfügbar
SUD40N10-25-E3 SUD40N10-25-E3 Vishay Siliconix sud40n10.pdf Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2485 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.2 EUR
10+ 6.04 EUR
100+ 4.89 EUR
500+ 4.35 EUR
1000+ 3.72 EUR
Mindestbestellmenge: 4
SIZ704DT-T1-GE3 siz704dt.pdf
SIZ704DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3077 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
DG429DN 70063.pdf
DG429DN
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 sir640dp.pdf
SIR640DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 sir640dp.pdf
SIR640DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 sir870dp.pdf
SIR870DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
Produkt ist nicht verfügbar
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 sia429dj.pdf
SIA429DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
SI2318CDS-T1-GE3
SI2318CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 109588 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2318CDS-T1-GE3
SI2318CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 109588 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 sir870dp.pdf
SIR870DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.95 EUR
10+ 5.35 EUR
100+ 4.3 EUR
500+ 3.53 EUR
Mindestbestellmenge: 5
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 sia429dj.pdf
SIA429DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIHW30N60E-GE3 SiHW30N60E.pdf
SIHW30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.79 EUR
10+ 12.41 EUR
100+ 10.04 EUR
Mindestbestellmenge: 2
SIHG33N60E-GE3 sihg33n60e.pdf
SIHG33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Produkt ist nicht verfügbar
SIHW33N60E-GE3 sihw33n60e.pdf
SIHW33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.42 EUR
10+ 12.95 EUR
480+ 9.31 EUR
Mindestbestellmenge: 2
SIHW47N60E-GE3 SiHW47N60E.pdf
SIHW47N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+22.49 EUR
Mindestbestellmenge: 2
DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 7406 Stücke:
Lieferzeit 21-28 Tag (e)
DG9431DY-T1-E3 dg9431.pdf
DG9431DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
auf Bestellung 3341 Stücke:
Lieferzeit 21-28 Tag (e)
DG9461DV-T1-E3 dg9461.pdf
DG9461DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 6TSOP
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
SI4404DY-T1-E3 si4404dy.pdf
SI4404DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 71105.pdf
Si4412ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI1307DL-T1-E3 si1307dl.pdf
SI1307DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1405DL-T1-E3 si1405dl.pdf
SI1405DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
SI3445ADV-T1-E3 72859.pdf
SI3445ADV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 4.4A 6-TSOP
Produkt ist nicht verfügbar
DG201BDY-E3 dg201b.pdf
DG201BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 8059 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.34 EUR
10+ 5.69 EUR
50+ 5.37 EUR
100+ 4.57 EUR
250+ 4.29 EUR
500+ 3.76 EUR
1000+ 3.11 EUR
2500+ 2.9 EUR
5000+ 2.79 EUR
Mindestbestellmenge: 5
DG202BDQ-T1-E3 dg201b.pdf
DG202BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 85OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
auf Bestellung 21255 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.92 EUR
10+ 6.22 EUR
25+ 5.86 EUR
100+ 5 EUR
250+ 4.69 EUR
500+ 4.11 EUR
1000+ 3.4 EUR
Mindestbestellmenge: 4
DG202BDY-T1-E3 dg201b.pdf
DG202BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
auf Bestellung 4402 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.5 EUR
10+ 5.85 EUR
25+ 5.52 EUR
100+ 4.7 EUR
250+ 4.42 EUR
500+ 3.86 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 4
DG308BDY-T1-E3 DG308B%2CDG309B.pdf
DG308BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4V ~ 44V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 1981 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.99 EUR
10+ 6.28 EUR
25+ 5.92 EUR
100+ 5.05 EUR
250+ 4.74 EUR
500+ 4.15 EUR
1000+ 3.44 EUR
Mindestbestellmenge: 4
DG409LDQ-T1-E3 DG408L,409L.pdf
DG409LDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 29OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 29Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -82dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
DG419LDY-T1-E3 dg417l.pdf
DG419LDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 20OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 1pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 7406 Stücke:
Lieferzeit 21-28 Tag (e)
DG9431DY-T1-E3 dg9431.pdf
DG9431DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
auf Bestellung 3341 Stücke:
Lieferzeit 21-28 Tag (e)
SIP21106DR-18-E3 sip21106.pdf
SIP21106DR-18-E3
Hersteller: Vishay Siliconix
Description: IC REG LINEAR 1.8V 150MA SC70-5
Produkt ist nicht verfügbar
SI7218DN-T1-E3 si7218dn.pdf
SI7218DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
auf Bestellung 712 Stücke:
Lieferzeit 21-28 Tag (e)
Si9933CDY-T1-E3 si9933cdy.pdf
Si9933CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10255 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.25 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 18
SI9936BDY-T1-E3 si9936bd.pdf
SI9936BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI9945BDY-T1-GE3 si9945bdy.pdf
SI9945BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 48062 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
16+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 13
IRF530STRLPBF sihf530s.pdf
IRF530STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 4877 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4 EUR
10+ 3.32 EUR
100+ 2.64 EUR
Mindestbestellmenge: 7
IRF630STRLPBF sih630s.pdf
IRF630STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1583 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.25 EUR
100+ 2.59 EUR
Mindestbestellmenge: 7
IRFBC40STRLPBF
IRFBC40STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.27 EUR
10+ 8.63 EUR
100+ 6.98 EUR
Mindestbestellmenge: 3
IRFS9N60ATRLPBF sihs9n60.pdf
IRFS9N60ATRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.35 EUR
10+ 7.01 EUR
100+ 5.67 EUR
Mindestbestellmenge: 4
IRL540STRLPBF sihl540s.pdf
IRL540STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.15 EUR
10+ 5.94 EUR
100+ 4.72 EUR
Mindestbestellmenge: 4
SI4100DY-T1-E3 si4100dy.pdf
SI4100DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
auf Bestellung 30752 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SI4128DY-T1-GE3 si4128dy-old.pdf
SI4128DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 4058 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
SI7228DN-T1-GE3 si7228dn.pdf
SI7228DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
Produkt ist nicht verfügbar
SI7336ADP-T1-GE3 si7336adp.pdf
SI7336ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 11830 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.11 EUR
10+ 3.41 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 7
SI7848BDP-T1-E3 si7848bdp.pdf
SI7848BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 36547 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.03 EUR
10+ 3.35 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
Si7860DP-T1-E3 71854.pdf
Si7860DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7868ADP-T1-E3 73384.pdf
SI7868ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
auf Bestellung 1994 Stücke:
Lieferzeit 21-28 Tag (e)
SI7880ADP-T1-E3 si7880adp.pdf
SI7880ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
auf Bestellung 1390 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.75 EUR
10+ 10.57 EUR
100+ 8.66 EUR
500+ 7.37 EUR
1000+ 6.66 EUR
Mindestbestellmenge: 3
SI7884BDP-T1-E3 si7884bd.pdf
SI7884BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
10+ 5.6 EUR
100+ 4.52 EUR
500+ 4.02 EUR
1000+ 3.44 EUR
Mindestbestellmenge: 4
SIS434DN-T1-GE3 sis434dn.pdf
SIS434DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 1677 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.24 EUR
15+ 1.83 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 12
SUD15N15-95-E3 sud15n15.pdf
SUD15N15-95-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 14352 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.1 EUR
10+ 4.22 EUR
100+ 3.36 EUR
500+ 2.84 EUR
1000+ 2.41 EUR
Mindestbestellmenge: 6
SUD23N06-31L-E3 sud23n06.pdf
SUD23N06-31L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD35N05-26L-E3 sud35n05.pdf
SUD35N05-26L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 35A TO252
Produkt ist nicht verfügbar
SUD40N04-10A-E3 71420.pdf
SUD40N04-10A-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A TO252
Produkt ist nicht verfügbar
SUD40N10-25-E3 sud40n10.pdf
SUD40N10-25-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2485 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.2 EUR
10+ 6.04 EUR
100+ 4.89 EUR
500+ 4.35 EUR
1000+ 3.72 EUR
Mindestbestellmenge: 4
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