Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SI7898DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 3A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Base Part Number: SI7898 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
auf Bestellung 4216 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 384 Stücke - Preis und Lieferfrist anzeigen
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SI7898DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 3A PPAK SO-8 Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Vgs (Max): ±20V Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Base Part Number: SI7898 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 2545 Stücke Lieferzeit 21-28 Tag (e) |
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IRFL210TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 0.96A SOT223 Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: IRFL210 Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 7935 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 361 Stücke - Preis und Lieferfrist anzeigen
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SI1499DH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 1.6A SC70-6 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V Vgs (Max): ±5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI1499 Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363) Mounting Type: Surface Mount |
auf Bestellung 3047 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5894 Stücke - Preis und Lieferfrist anzeigen
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SI1900DL-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 0.59A SC70-6 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI1900 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 270mW Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Current - Continuous Drain (Id) @ 25°C: 590mA Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
auf Bestellung 53663 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 176318 Stücke - Preis und Lieferfrist anzeigen
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SI7414DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 5.6A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7414 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 16672 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 61220 Stücke - Preis und Lieferfrist anzeigen
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IRFL014TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 2.7A SOT223 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: IRFL014 Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V |
auf Bestellung 3448 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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SQ2319ADS-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 4.6A SOT23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 20V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SQ2319 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) |
auf Bestellung 93604 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
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SI2323DDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5.3A SOT-23 Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V Vgs (Max): ±8V |
auf Bestellung 8707 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12595 Stücke - Preis und Lieferfrist anzeigen
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SI2323DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI2323 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) |
auf Bestellung 64208 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
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IRFR9110TRLPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 3.1A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 2990 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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SI3433CDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 6TSOP Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3433 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 6TSOP Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
auf Bestellung 11499 Stücke Lieferzeit 21-28 Tag (e) |
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SI3552DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 6TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Base Part Number: SI3552 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.15W Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 8968 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6694 Stücke - Preis und Lieferfrist anzeigen
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SQM10250E_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN 250V TO-263 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET N-CHAN 250V TO-263 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V Vgs (Max): ±20V Power Dissipation (Max): 375W (Tc) Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 370 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CHAN 250V TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V |
auf Bestellung 1153 Stücke Lieferzeit 21-28 Tag (e) |
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SIR640DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Base Part Number: SIR640 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Part Status: Obsolete Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
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SI3443BDV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 6-TSOP FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.1W (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) |
auf Bestellung 4806 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13286 Stücke - Preis und Lieferfrist anzeigen
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SQJ422EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 75A PPAK SO-8 Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA |
auf Bestellung 4673 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 236 Stücke - Preis und Lieferfrist anzeigen
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IRFD110 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 1A 4DIP Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 47362 Stücke - Preis und Lieferfrist anzeigen
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SIHG050N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 51A TO247AC Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
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SQR40N10-25_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO252 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-252-4, DPak (3 Leads + Tab) Supplier Device Package: TO-252 (DPAK) Reverse Lead |
auf Bestellung 1998 Stücke Lieferzeit 21-28 Tag (e) |
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SI5513CDC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A 1206-8 FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI5513 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Drain to Source Voltage (Vdss): 20V |
auf Bestellung 12034 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
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SI4925DDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 8A 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4925 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 3417 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2490 Stücke - Preis und Lieferfrist anzeigen
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SI7478DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 15A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active |
auf Bestellung 4241 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6672 Stücke - Preis und Lieferfrist anzeigen
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SIA483ADJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30-V PWRPAK SC-70 FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SIA483 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): +16V, -20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) |
auf Bestellung 5989 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30-V PWRPAK SC-70 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): +16V, -20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount |
auf Bestellung 6020 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SIRA18BDP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 19A/40A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 19A/40A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
auf Bestellung 1045 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30-V PWRPAK SO-8 Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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SIRA88BDP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 19A/40A PPAK SO8 Base Part Number: SIRA88 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 19A/40A PPAK SO8 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIRA88 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drain to Source Voltage (Vdss): 30V |
auf Bestellung 6035 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30 V PWRPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 |
auf Bestellung 6050 Stücke Lieferzeit 21-28 Tag (e) |
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SI4425FDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc) |
auf Bestellung 2432 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 30-V (D-S) SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V Vgs (Max): +16V, -20V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 4954 Stücke Lieferzeit 21-28 Tag (e) |
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IRF9Z34STRRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 18A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) Part Status: Active FET Type: P-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 279 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 485 Stücke - Preis und Lieferfrist anzeigen
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IRF9Z34STRLPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 18A D2PAK Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 797 Stücke - Preis und Lieferfrist anzeigen
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SI4776DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHANNEL 30V 11.9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 4.1W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET N-CHANNEL 30V 11.9A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 4.1W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V |
auf Bestellung 1186 Stücke Lieferzeit 21-28 Tag (e) |
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SI4778DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 8A 8SO Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Cut Tape (CT) Base Part Number: SI4778 Package / Case: 8-SOIC (0.154", 3.90mm Width) Part Status: Obsolete Manufacturer: Vishay Siliconix Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 25V |
auf Bestellung 1559 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 119500 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 8A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 1979 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 119500 Stücke - Preis und Lieferfrist anzeigen
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SI7113DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A 1212-8 FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7113 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) |
auf Bestellung 17388 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12109 Stücke - Preis und Lieferfrist anzeigen
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SI7113DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 2821 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13416 Stücke - Preis und Lieferfrist anzeigen
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IRL640STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 17A D2PAK Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Vgs (Max): ±10V Vgs(th) (Max) @ Id: 2V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 709 Stücke Lieferzeit 21-28 Tag (e) |
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SI2305CDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 5.8A SOT23-3 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Base Part Number: SI2305 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 4V Vgs (Max): ±8V |
auf Bestellung 17525 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 191 Stücke - Preis und Lieferfrist anzeigen
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SI2305DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 3.5A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66000 Stücke - Preis und Lieferfrist anzeigen
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SI2305ADS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 5.4A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI2305ADS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 5.4A SOT23-3 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
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SUD50P06-15L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 50A TO252 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Ta), 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6380 Stücke - Preis und Lieferfrist anzeigen
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SI4909DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 40V 8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.2W |
auf Bestellung 6554 Stücke Lieferzeit 21-28 Tag (e) |
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SISS22DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V PPAK 1212-8S Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V |
auf Bestellung 5825 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7077 Stücke - Preis und Lieferfrist anzeigen
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SIA400EDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A SC-70 Power Dissipation (Max): 19.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIA400 |
auf Bestellung 3413 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 283820 Stücke - Preis und Lieferfrist anzeigen
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IRFP32N50K |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 32A TO247-3 Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
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SI7157DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 FET Type: P-Channel Base Part Number: SI7157 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) |
auf Bestellung 8334 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 26224 Stücke - Preis und Lieferfrist anzeigen
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SI7112DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11.3A 1212-8 Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs (Max): ±12V |
auf Bestellung 8000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2822 Stücke - Preis und Lieferfrist anzeigen
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SISH112DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V PPAK 1212-8SH Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drain to Source Voltage (Vdss): 30V |
auf Bestellung 4050 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7046 Stücke - Preis und Lieferfrist anzeigen
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SI7112DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11.3A 1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 1450 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13472 Stücke - Preis und Lieferfrist anzeigen
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SI8902EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 3.9A 6-MFP FET Type: 2 N-Channel (Dual) Common Drain Base Part Number: SI8902 Supplier Device Package: 6-Micro Foot™ (2.36x1.56) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Part Status: Discontinued at Digi-Key Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 1V @ 980µA Current - Continuous Drain (Id) @ 25°C: 3.9A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100360 Stücke - Preis und Lieferfrist anzeigen
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SI9933CDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4A 8-SOIC Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI9933 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A |
auf Bestellung 56509 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13 Stücke - Preis und Lieferfrist anzeigen
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SQM120N10-3M8_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 120A TO263 Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 100V 120A TO263 FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SQM120N Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) |
auf Bestellung 14166 Stücke Lieferzeit 21-28 Tag (e) |
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SIR680DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 100A POWERPAKSO Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 81nC @ 7.5V Vgs(th) (Max) @ Id: 3.4V @ 250µA Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 4222 Stücke Lieferzeit 21-28 Tag (e) |
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SI3493DDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CHANNEL 20V 8A 6TSOP Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Package / Case: SOT-23-6 Thin, TSOT-23-6 |
auf Bestellung 1909 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7875 Stücke - Preis und Lieferfrist anzeigen
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SI5448DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 25A CHIPFET Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 7.75mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Package / Case: PowerPAK® ChipFET™ Single Drain to Source Voltage (Vdss): 40V Supplier Device Package: PowerPAK® ChipFet Single Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 31W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 20V Vgs (Max): +20V, -16V |
auf Bestellung 2042 Stücke Lieferzeit 21-28 Tag (e) |
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SQJB42EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Feature: Standard Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 2107 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2107 Stücke - Preis und Lieferfrist anzeigen
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SIR158DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A POWERPAKSO-8 Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 83W (Tc) |
auf Bestellung 2854 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
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SIR626DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 100A POWERPAKSO Gate Charge (Qg) (Max) @ Vgs: 78nC @ 7.5V Vgs(th) (Max) @ Id: 3.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5130pF @ 30V Vgs (Max): ±20V |
auf Bestellung 11612 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12339 Stücke - Preis und Lieferfrist anzeigen
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SIR668DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 95A POWERPAKSO Power Dissipation (Max): 104W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 50V Vgs (Max): ±20V Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 83nC @ 7.5V Vgs(th) (Max) @ Id: 3.4V @ 250µA Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 4 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4436 Stücke - Preis und Lieferfrist anzeigen
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SIR632DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 29A POWERPAKSO Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 7.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 75V Power Dissipation (Max): 69.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7418 Stücke - Preis und Lieferfrist anzeigen
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IRF740STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Part Status: Active Vgs(th) (Max) @ Id: 4V @ 250µA Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 155 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
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IRF740ASTRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Part Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) |
auf Bestellung 440 Stücke Lieferzeit 21-28 Tag (e) |
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IRF740STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount FET Type: N-Channel Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) |
auf Bestellung 421 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2200 Stücke - Preis und Lieferfrist anzeigen
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SIA468DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 37.8A SC70-6 Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V Vgs (Max): +20V, -16V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 10365 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7818 Stücke - Preis und Lieferfrist anzeigen
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SIRC10DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A POWERPAKSO-8 Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIRC10 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 43W (Tc) FET Feature: Schottky Diode (Body) Input Capacitance (Ciss) (Max) @ Vds: 1873pF @ 15V Vgs (Max): +20V, -16V |
auf Bestellung 3985 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4397 Stücke - Preis und Lieferfrist anzeigen
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.jpg "SIP32401ADNP-T1GE4") |
SIP32401ADNP-T1GE4 |
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Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIP32401 Package / Case: 4-UFDFN Exposed Pad Supplier Device Package: 4-TDFN (1.2x1.6) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Fault Protection: Reverse Current Features: Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 62mOhm Current - Output (Max): 2.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.1V ~ 5.5V Interface: On/Off Output Type: N-Channel Output Configuration: High Side |
auf Bestellung 81000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 88997 Stücke - Preis und Lieferfrist anzeigen
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SQJ914EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 30V POWERPAK SO8 Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 27W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: PowerPAK® SO-8 Dual |
auf Bestellung 2624 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2624 Stücke - Preis und Lieferfrist anzeigen
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SI4431CDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 9A 8-SOIC Drain to Source Voltage (Vdss): 30V Base Part Number: SI4431 Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2746 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
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SISH106DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN PPAK 1212-8SH Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET N-CHAN PPAK 1212-8SH Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V |
auf Bestellung 1498 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CHAN PPAK 1212-8SH Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Mounting Type: Surface Mount Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 5970 Stücke Lieferzeit 21-28 Tag (e) |
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IRFD123PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 1.3A 4DIP Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
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SIR464DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Base Part Number: SIR464 FET Type: N-Channel Part Status: Active Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V |
auf Bestellung 1257 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 168587 Stücke - Preis und Lieferfrist anzeigen
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SIHB33N60ET1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 33A TO263 Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 600V 33A TO263 Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 64 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 600V 33A TO263 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 750 Stücke Lieferzeit 21-28 Tag (e) |
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SI1025X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 60V 0.19A SC-89 Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI1025 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 35 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
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SIA441DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 12A PPAK SC70-6 Base Part Number: SIA441 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: Out of Bounds Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19W (Tc) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 47mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 40V 12A SC-70 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 47mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 29882 Stücke Lieferzeit 21-28 Tag (e) |
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IRF630PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 9A TO220AB Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 666 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 112 Stücke - Preis und Lieferfrist anzeigen
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SI4936BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Current - Continuous Drain (Id) @ 25°C: 6.9A Drain to Source Voltage (Vdss): 30V Base Part Number: SI4936 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.8W FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V |
auf Bestellung 2454 Stücke Lieferzeit 21-28 Tag (e) |
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SIHH100N60E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 28A PPAK 8 X 8 Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 174W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| Vishay Siliconix |
Description: MOSFET E SERIES 600V POWERPAK 8X Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 174W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA |
auf Bestellung 3015 Stücke Lieferzeit 21-28 Tag (e) |
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SI2315BDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 3A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
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| Vishay Siliconix |
Description: MOSFET P-CH 12V 3A SOT23-3 Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 |
auf Bestellung 8033 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 12V 3A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V |
auf Bestellung 3620 Stücke Lieferzeit 21-28 Tag (e) |
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| SI7898DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Base Part Number: SI7898
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
auf Bestellung 4216 Stücke Description: MOSFET N-CH 150V 3A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Base Part Number: SI7898
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 384 Stücke - Preis und Lieferfrist anzeigen
| SI7898DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Base Part Number: SI7898
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 2545 Stücke Description: MOSFET N-CH 150V 3A PPAK SO-8
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Base Part Number: SI7898
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
| IRFL210TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 0.96A SOT223
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFL210
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 7935 Stücke Description: MOSFET N-CH 200V 0.96A SOT223
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFL210
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 361 Stücke - Preis und Lieferfrist anzeigen
| SI1499DH-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1499
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
auf Bestellung 3047 Stücke Description: MOSFET P-CH 8V 1.6A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1499
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 5894 Stücke - Preis und Lieferfrist anzeigen
| SI1900DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1900
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 53663 Stücke Description: MOSFET 2N-CH 30V 0.59A SC70-6
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1900
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 176318 Stücke - Preis und Lieferfrist anzeigen
| SI7414DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7414
Package / Case: PowerPAK® 1212-8
auf Bestellung 16672 Stücke Description: MOSFET N-CH 60V 5.6A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7414
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 61220 Stücke - Preis und Lieferfrist anzeigen
| IRFL014TRPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFL014
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
auf Bestellung 3448 Stücke Description: MOSFET N-CH 60V 2.7A SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFL014
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| SQ2319ADS-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 20V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQ2319
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
auf Bestellung 93604 Stücke Description: MOSFET P-CH 40V 4.6A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 20V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQ2319
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
| SI2323DDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
Vgs (Max): ±8V
auf Bestellung 8707 Stücke Description: MOSFET P-CH 20V 5.3A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
Vgs (Max): ±8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 12595 Stücke - Preis und Lieferfrist anzeigen
| SI2323DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2323
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
auf Bestellung 64208 Stücke Description: MOSFET P-CH 20V 3.7A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2323
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
| IRFR9110TRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2990 Stücke Description: MOSFET P-CH 100V 3.1A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| SI3433CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3433
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3433
auf Bestellung 11499 Stücke - Preis und Lieferfrist anzeigen
| SI3433CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 11499 Stücke Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Lieferzeit 21-28 Tag (e)
| SI3552DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Base Part Number: SI3552
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8968 Stücke Description: MOSFET N/P-CH 30V 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Base Part Number: SI3552
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6694 Stücke - Preis und Lieferfrist anzeigen
| SQM10250E_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 250V TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHAN 250V TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
auf Bestellung 1523 Stücke - Preis und Lieferfrist anzeigen
| SQM10250E_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 250V TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Vgs (Max): ±20V
Power Dissipation (Max): 375W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 370 Stücke Description: MOSFET N-CHAN 250V TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Vgs (Max): ±20V
Power Dissipation (Max): 375W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
auf Bestellung 1153 Stücke - Preis und Lieferfrist anzeigen
| SQM10250E_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 250V TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
auf Bestellung 1153 Stücke Description: MOSFET N-CHAN 250V TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Lieferzeit 21-28 Tag (e)
auf Bestellung 370 Stücke - Preis und Lieferfrist anzeigen
| SIR640DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Base Part Number: SIR640
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 60A PPAK SO-8
Base Part Number: SIR640
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
| SI3443BDV-T1-E3 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 6-TSOP
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 4806 Stücke Description: MOSFET P-CH 20V 3.6A 6-TSOP
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 13286 Stücke - Preis und Lieferfrist anzeigen
| SQJ422EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 4673 Stücke Description: MOSFET N-CH 40V 75A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 236 Stücke - Preis und Lieferfrist anzeigen
| IRFD110 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1A 4DIP
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1A 4DIP
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 47362 Stücke - Preis und Lieferfrist anzeigen
| SIHG050N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO247AC
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 51A TO247AC
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
| SQR40N10-25_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
auf Bestellung 1998 Stücke Description: MOSFET N-CH 100V 40A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Lieferzeit 21-28 Tag (e)
| SI5513CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5513
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
auf Bestellung 12034 Stücke Description: MOSFET N/P-CH 20V 4A 1206-8
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5513
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
| SI4925DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4925
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 3417 Stücke Description: MOSFET 2P-CH 30V 8A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4925
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2490 Stücke - Preis und Lieferfrist anzeigen
| SI7478DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 4241 Stücke Description: MOSFET N-CH 60V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 6672 Stücke - Preis und Lieferfrist anzeigen
| SIA483ADJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30-V PWRPAK SC-70
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIA483
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5989 Stücke Description: MOSFET P-CH 30-V PWRPAK SC-70
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIA483
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 9020 Stücke - Preis und Lieferfrist anzeigen
| SIA483ADJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30-V PWRPAK SC-70
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
auf Bestellung 6020 Stücke Description: MOSFET P-CH 30-V PWRPAK SC-70
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 8989 Stücke - Preis und Lieferfrist anzeigen
| SIRA18BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 7045 Stücke - Preis und Lieferfrist anzeigen
| SIRA18BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 1045 Stücke Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
| SIRA18BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30-V PWRPAK SO-8
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30-V PWRPAK SO-8
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 1045 Stücke - Preis und Lieferfrist anzeigen
| SIRA88BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 12085 Stücke - Preis und Lieferfrist anzeigen
| SIRA88BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 6035 Stücke Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9050 Stücke - Preis und Lieferfrist anzeigen
| SIRA88BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30 V PWRPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
auf Bestellung 6050 Stücke Description: MOSFET N-CH 30 V PWRPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 9035 Stücke - Preis und Lieferfrist anzeigen
| SI4425FDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 7386 Stücke - Preis und Lieferfrist anzeigen
| SI4425FDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
auf Bestellung 2432 Stücke Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 4954 Stücke - Preis und Lieferfrist anzeigen
| SI4425FDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30-V (D-S) SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 4954 Stücke Description: MOSFET P-CH 30-V (D-S) SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2432 Stücke - Preis und Lieferfrist anzeigen
| IRF9Z34STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 279 Stücke Description: MOSFET P-CH 60V 18A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 485 Stücke - Preis und Lieferfrist anzeigen
| IRF9Z34STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 18A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 797 Stücke - Preis und Lieferfrist anzeigen
| SI4776DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 30V 11.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 4.1W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 30V 11.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 4.1W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1186 Stücke - Preis und Lieferfrist anzeigen
| SI4776DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 30V 11.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 4.1W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
auf Bestellung 1186 Stücke Description: MOSFET N-CHANNEL 30V 11.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 4.1W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
Lieferzeit 21-28 Tag (e)
|
| SI4778DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8SO
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Base Part Number: SI4778
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
auf Bestellung 1559 Stücke Description: MOSFET N-CH 25V 8A 8SO
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Base Part Number: SI4778
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Lieferzeit 21-28 Tag (e)
auf Bestellung 121479 Stücke - Preis und Lieferfrist anzeigen
| SI4778DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1979 Stücke Description: MOSFET N-CH 25V 8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 121059 Stücke - Preis und Lieferfrist anzeigen
| SI7113DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7113
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
auf Bestellung 17388 Stücke Description: MOSFET P-CH 100V 13.2A 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7113
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 12109 Stücke - Preis und Lieferfrist anzeigen
| SI7113DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2821 Stücke Description: MOSFET P-CH 100V 13.2A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 13416 Stücke - Preis und Lieferfrist anzeigen
| IRL640STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 709 Stücke Description: MOSFET N-CH 200V 17A D2PAK
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| SI2305CDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.8A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SI2305
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 4V
Vgs (Max): ±8V
auf Bestellung 17525 Stücke Description: MOSFET P-CH 8V 5.8A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SI2305
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 4V
Vgs (Max): ±8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 191 Stücke - Preis und Lieferfrist anzeigen
| SI2305DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 3.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
auf Bestellung 66000 Stücke - Preis und Lieferfrist anzeigen
| SI2305ADS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 5.4A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI2305ADS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| SUD50P06-15L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 50A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
auf Bestellung 6380 Stücke - Preis und Lieferfrist anzeigen
| SI4909DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
auf Bestellung 6554 Stücke Description: MOSFET 2P-CH 40V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Lieferzeit 21-28 Tag (e)
| SISS22DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
auf Bestellung 5825 Stücke Description: MOSFET N-CH 60V PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7077 Stücke - Preis und Lieferfrist anzeigen
| SIA400EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC-70
Power Dissipation (Max): 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA400
auf Bestellung 3413 Stücke Description: MOSFET N-CH 30V 12A SC-70
Power Dissipation (Max): 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA400
Lieferzeit 21-28 Tag (e)
auf Bestellung 283820 Stücke - Preis und Lieferfrist anzeigen
| IRFP32N50K |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 32A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 32A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
| SI7157DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
FET Type: P-Channel
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 8334 Stücke Description: MOSFET P-CH 20V 60A PPAK SO-8
FET Type: P-Channel
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 26224 Stücke - Preis und Lieferfrist anzeigen
| SI7112DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±12V
auf Bestellung 8000 Stücke Description: MOSFET N-CH 30V 11.3A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±12V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2822 Stücke - Preis und Lieferfrist anzeigen
| SISH112DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V PPAK 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 4050 Stücke Description: MOSFET N-CH 30V PPAK 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7046 Stücke - Preis und Lieferfrist anzeigen
| SI7112DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1450 Stücke Description: MOSFET N-CH 30V 11.3A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 13472 Stücke - Preis und Lieferfrist anzeigen
| SI8902EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.9A 6-MFP
FET Type: 2 N-Channel (Dual) Common Drain
Base Part Number: SI8902
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 1V @ 980µA
Current - Continuous Drain (Id) @ 25°C: 3.9A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 3.9A 6-MFP
FET Type: 2 N-Channel (Dual) Common Drain
Base Part Number: SI8902
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 1V @ 980µA
Current - Continuous Drain (Id) @ 25°C: 3.9A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
auf Bestellung 100360 Stücke - Preis und Lieferfrist anzeigen
| SI9933CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8-SOIC
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI9933
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
auf Bestellung 56509 Stücke Description: MOSFET 2P-CH 20V 4A 8-SOIC
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI9933
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Lieferzeit 21-28 Tag (e)
auf Bestellung 13 Stücke - Preis und Lieferfrist anzeigen
| SQM120N10-3M8_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 120A TO263
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
auf Bestellung 14166 Stücke - Preis und Lieferfrist anzeigen
| SQM120N10-3M8_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQM120N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
auf Bestellung 14166 Stücke Description: MOSFET N-CH 100V 120A TO263
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQM120N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
| SIR680DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 100A POWERPAKSO
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 7.5V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 4222 Stücke Description: MOSFET N-CH 80V 100A POWERPAKSO
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 7.5V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SI3493DDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 20V 8A 6TSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 1909 Stücke Description: MOSFET P-CHANNEL 20V 8A 6TSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Lieferzeit 21-28 Tag (e)
auf Bestellung 7875 Stücke - Preis und Lieferfrist anzeigen
| SI5448DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25A CHIPFET
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.75mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Package / Case: PowerPAK® ChipFET™ Single
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 20V
Vgs (Max): +20V, -16V
auf Bestellung 2042 Stücke Description: MOSFET N-CH 40V 25A CHIPFET
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.75mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Package / Case: PowerPAK® ChipFET™ Single
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 20V
Vgs (Max): +20V, -16V
Lieferzeit 21-28 Tag (e)
| SQJB42EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2107 Stücke Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2107 Stücke - Preis und Lieferfrist anzeigen
| SIR158DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
auf Bestellung 2854 Stücke Description: MOSFET N-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
| SIR626DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 100A POWERPAKSO
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 7.5V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5130pF @ 30V
Vgs (Max): ±20V
auf Bestellung 11612 Stücke Description: MOSFET N-CH 60V 100A POWERPAKSO
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 7.5V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5130pF @ 30V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 12339 Stücke - Preis und Lieferfrist anzeigen
| SIR668DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 95A POWERPAKSO
Power Dissipation (Max): 104W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 50V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 7.5V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 4 Stücke Description: MOSFET N-CH 100V 95A POWERPAKSO
Power Dissipation (Max): 104W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 50V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 7.5V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 4436 Stücke - Preis und Lieferfrist anzeigen
| SIR632DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 29A POWERPAKSO
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 7.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 75V
Power Dissipation (Max): 69.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 29A POWERPAKSO
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 7.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 75V
Power Dissipation (Max): 69.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 7418 Stücke - Preis und Lieferfrist anzeigen
| IRF740STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 155 Stücke Description: MOSFET N-CH 400V 10A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
| IRF740ASTRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
FET Type: N-Channel
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
auf Bestellung 440 Stücke Description: MOSFET N-CH 400V 10A D2PAK
FET Type: N-Channel
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
| IRF740STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
FET Type: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
auf Bestellung 421 Stücke Description: MOSFET N-CH 400V 10A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
FET Type: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2200 Stücke - Preis und Lieferfrist anzeigen
| SIA468DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10365 Stücke Description: MOSFET N-CH 30V 37.8A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7818 Stücke - Preis und Lieferfrist anzeigen
| SIRC10DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POWERPAKSO-8
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIRC10
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 1873pF @ 15V
Vgs (Max): +20V, -16V
auf Bestellung 3985 Stücke Description: MOSFET N-CH 30V 60A POWERPAKSO-8
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIRC10
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 1873pF @ 15V
Vgs (Max): +20V, -16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4397 Stücke - Preis und Lieferfrist anzeigen
| SIP32401ADNP-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32401
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
auf Bestellung 81000 Stücke Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32401
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Lieferzeit 21-28 Tag (e)
auf Bestellung 88997 Stücke - Preis und Lieferfrist anzeigen
| SQJ914EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 2624 Stücke Description: MOSFET 2 N-CH 30V POWERPAK SO8
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8 Dual
Lieferzeit 21-28 Tag (e)
auf Bestellung 2624 Stücke - Preis und Lieferfrist anzeigen
| SI4431CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8-SOIC
Drain to Source Voltage (Vdss): 30V
Base Part Number: SI4431
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2746 Stücke Description: MOSFET P-CH 30V 9A 8-SOIC
Drain to Source Voltage (Vdss): 30V
Base Part Number: SI4431
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
| SISH106DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN PPAK 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHAN PPAK 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
auf Bestellung 7468 Stücke - Preis und Lieferfrist anzeigen
| SISH106DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN PPAK 1212-8SH
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 1498 Stücke Description: MOSFET N-CHAN PPAK 1212-8SH
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5970 Stücke - Preis und Lieferfrist anzeigen
|
| SISH106DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN PPAK 1212-8SH
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5970 Stücke Description: MOSFET N-CHAN PPAK 1212-8SH
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1498 Stücke - Preis und Lieferfrist anzeigen
| IRFD123PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.3A 4DIP
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
| SIR464DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SIR464
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
auf Bestellung 1257 Stücke Description: MOSFET N-CH 30V 50A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SIR464
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 168587 Stücke - Preis und Lieferfrist anzeigen
| SIHB33N60ET1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO263
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 33A TO263
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 814 Stücke - Preis und Lieferfrist anzeigen
| SIHB33N60ET1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 64 Stücke Description: MOSFET N-CH 600V 33A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 750 Stücke - Preis und Lieferfrist anzeigen
|
| SIHB33N60ET1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO263
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Power Dissipation (Max): 278W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 750 Stücke Description: MOSFET N-CH 600V 33A TO263
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Power Dissipation (Max): 278W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
auf Bestellung 64 Stücke - Preis und Lieferfrist anzeigen
| SI1025X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC-89
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1025
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 35 Stücke Description: MOSFET 2P-CH 60V 0.19A SC-89
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1025
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
| SIA441DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 12A PPAK SC70-6
Base Part Number: SIA441
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 12A PPAK SC70-6
Base Part Number: SIA441
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
auf Bestellung 29882 Stücke - Preis und Lieferfrist anzeigen
| SIA441DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 12A SC-70
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 29882 Stücke Description: MOSFET P-CH 40V 12A SC-70
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| IRF630PBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 666 Stücke Description: MOSFET N-CH 200V 9A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 112 Stücke - Preis und Lieferfrist anzeigen
|
| SI4936BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 30V
Base Part Number: SI4936
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
auf Bestellung 2454 Stücke Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 30V
Base Part Number: SI4936
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Lieferzeit 21-28 Tag (e)
| SIHH100N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A PPAK 8 X 8
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 28A PPAK 8 X 8
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3015 Stücke - Preis und Lieferfrist anzeigen
| SIHH100N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES 600V POWERPAK 8X
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 174W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
auf Bestellung 3015 Stücke Description: MOSFET E SERIES 600V POWERPAK 8X
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 174W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Lieferzeit 21-28 Tag (e)
| SI2315BDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 3A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 11653 Stücke - Preis und Lieferfrist anzeigen
| SI2315BDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 8033 Stücke Description: MOSFET P-CH 12V 3A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Lieferzeit 21-28 Tag (e)
auf Bestellung 3620 Stücke - Preis und Lieferfrist anzeigen
| SI2315BDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
auf Bestellung 3620 Stücke Description: MOSFET P-CH 12V 3A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 8033 Stücke - Preis und Lieferfrist anzeigen
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