Die Produkte vishay siliconix

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IRF630STRRPBF IRF630STRRPBF sih630s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
auf Bestellung 425 Stücke
Lieferzeit 21-28 Tag (e)
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IRF630S IRF630S Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF630L IRF630L sihf630p.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: IRF630
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF630STRL IRF630STRL Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 200 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF630STRR IRF630STRR Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQM40061EL_GE3 SQM40061EL_GE3 sqm40061el.pdf Vishay Siliconix Description: MOSFET P-CHAN 40V TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Vgs (Max): ±20V
auf Bestellung 227 Stücke
Lieferzeit 21-28 Tag (e)
SQ7415AEN-T1_GE3 SQ7415AEN-T1_GE3 sq7415aen.pdf Vishay Siliconix Description: MOSFET P-CH 60V 16A 1212-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
FET Type: P-Channel
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
auf Bestellung 3527 Stücke
Lieferzeit 21-28 Tag (e)
SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 siz918dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ918
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5120 Stücke
Lieferzeit 21-28 Tag (e)
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SI4688DY-T1-GE3 SI4688DY-T1-GE3 si4688dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8.9A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD2N80AE-GE3 SIHD2N80AE-GE3 sihd2n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 2.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
auf Bestellung 3037 Stücke
Lieferzeit 21-28 Tag (e)
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DG201BDY-T1-E3 DG201BDY-T1-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Base Part Number: DG201
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
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Lieferzeit 21-28 Tag (e)
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DG201BDQ-T1-E3 DG201BDQ-T1-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Base Part Number: DG201
Supplier Device Package: 16-TSSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1180 Stücke
Lieferzeit 21-28 Tag (e)
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DG201HSDQ-T1-E3 DG201HSDQ-T1-E3 dg201hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG201
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Channel-to-Channel Matching (ΔRon): 1.5Ohm
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Dual (V±): ±15V
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Lieferzeit 21-28 Tag (e)
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DG201HSDY-T1-E3 DG201HSDY-T1-E3 dg201hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG201
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Channel-to-Channel Matching (ΔRon): 1.5Ohm
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Switch Circuit: SPST - NC
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Lieferzeit 21-28 Tag (e)
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IRFR310TRLPBF IRFR310TRLPBF sihfr310.pdf Vishay Siliconix Description: MOSFET N-CH 400V 1.7A DPAK
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 2975 Stücke
Lieferzeit 21-28 Tag (e)
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SI7115DN-T1-GE3 SI7115DN-T1-GE3 si7115dn.pdf Vishay Siliconix Description: MOSFET P-CH 150V 8.9A 1212-8
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10156 Stücke
Lieferzeit 21-28 Tag (e)
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SISS30DN-T1-GE3 SISS30DN-T1-GE3 siss30dn.pdf Vishay Siliconix Description: MOSFET N-CHAN 80-V POWERPAK 1212
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Drain to Source Voltage (Vdss): 80V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1855 Stücke - Preis und Lieferfrist anzeigen
SIA447DJ-T1-GE3 SIA447DJ-T1-GE3 sia447dj.pdf Vishay Siliconix Description: MOSFET P-CH 12V 12A SC-70-6L
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
auf Bestellung 5712 Stücke
Lieferzeit 21-28 Tag (e)
SQJ479EP-T1_GE3 SQJ479EP-T1_GE3 sqj479ep.pdf Vishay Siliconix Description: MOSFET P-CH 80V 32A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
auf Bestellung 3850 Stücke
Lieferzeit 21-28 Tag (e)
SI7454DDP-T1-GE3 SI7454DDP-T1-GE3 si7454ddp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 21A PPAK SO-8
Base Part Number: SI7454
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3292 Stücke
Lieferzeit 21-28 Tag (e)
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SI2343DS-T1-GE3 SI2343DS-T1-GE3 72079.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.1A SOT-23
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI2343
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6764 Stücke
Lieferzeit 21-28 Tag (e)
SQS407ENW-T1_GE3 SQS407ENW-T1_GE3 sqs407enw.pdf Vishay Siliconix Description: MOSFET P-CH 30V 16A PPAK1212-8W
Package / Case: PowerPAK® 1212-8W
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4572pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS407
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 16A PPAK1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4572pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS407
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V PPAK 1212-8W
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4572pF @ 20V
auf Bestellung 3046 Stücke
Lieferzeit 21-28 Tag (e)
DG9232EDY-GE3 DG9232EDY-GE3 dg9232e.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8SOIC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
auf Bestellung 465 Stücke
Lieferzeit 21-28 Tag (e)
SIB456DK-T1-GE3 SIB456DK-T1-GE3 sib456dk.pdf Vishay Siliconix Description: MOSFET N-CH 100V 6.3A SC75-6L
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SIB456
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
auf Bestellung 26542 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13926 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRRPBF IRFR210TRRPBF sihfr210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.6A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI9986CY-T1-E3 SI9986CY-T1-E3 si9986.pdf Vishay Siliconix Description: IC MTR DRV BIPOLAR 3.8-13.2V 8SO
Technology: Power MOSFET
Interface: Parallel
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 3.8V ~ 13.2V
Voltage - Load: 3.8V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1758 Stücke - Preis und Lieferfrist anzeigen
IRL510STRLPBF IRL510STRLPBF sihf510s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.6A D2PAK
Base Part Number: IRL510
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
SI8424CDB-T1-E1 SI8424CDB-T1-E1 si8424cdb.pdf Vishay Siliconix Description: MOSFET N-CH 8V MICROFOOT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 4V
Vgs (Max): ±5V
Base Part Number: SI8424
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIA437DJ-T1-GE3 SIA437DJ-T1-GE3 sia437dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 29.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 29.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SIA437
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
auf Bestellung 29442 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 43247 Stücke - Preis und Lieferfrist anzeigen
SI4464DY-T1-GE3 SI4464DY-T1-GE3 72051.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.7A 8-SOIC
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3910 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 863 Stücke - Preis und Lieferfrist anzeigen
SI6423DQ-T1-GE3 SI6423DQ-T1-GE3 72257.pdf Vishay Siliconix Description: MOSFET P-CH 12V 8.2A 8-TSSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.05W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 7815 Stücke
Lieferzeit 21-28 Tag (e)
SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 sidr622dp.pdf Vishay Siliconix Description: MOSFET N-CHAN 150V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8DC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
auf Bestellung 4955 Stücke
Lieferzeit 21-28 Tag (e)
SIHP186N60EF-GE3 SIHP186N60EF-GE3 sihp186n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 18A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP186
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TN2404K-T1-GE3 TN2404K-T1-GE3 tn2404k.pdf Vishay Siliconix Description: MOSFET N-CH 240V 200MA TO236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 5568 Stücke
Lieferzeit 21-28 Tag (e)
SI7190DP-T1-GE3 SI7190DP-T1-GE3 si7190dp.pdf Vishay Siliconix Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SI7190
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Drain to Source Voltage (Vdss): 250V
Input Capacitance (Ciss) (Max) @ Vds: 2214pF @ 125V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
auf Bestellung 1682 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6472 Stücke - Preis und Lieferfrist anzeigen
SIC530CD-T1-GE3 SIC530CD-T1-GE3 sic530.pdf Vishay Siliconix Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 20V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3360 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1803 Stücke - Preis und Lieferfrist anzeigen
SUP50010E-GE3 SUP50010E-GE3 sup50010e.pdf Vishay Siliconix Description: MOSFET N-CH 60V 150A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 253 Stücke
Lieferzeit 21-28 Tag (e)
3+ 8.81 EUR
10+ 7.9 EUR
100+ 6.48 EUR
SUM50010E-GE3 SUM50010E-GE3 sum50010e.pdf Vishay Siliconix Description: MOSFET N-CH 60V 150A TO263
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SUM50010
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10895pF @ 30V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
auf Bestellung 285 Stücke
Lieferzeit 21-28 Tag (e)
SIC467ED-T1-GE3 SIC467ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: SYNC REG 6A MICROBUCK PP MLP55-2
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Base Part Number: SIC467
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 6A
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: SYNC REG 6A MICROBUCK PP MLP55-2
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 6A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SIC467
Supplier Device Package: PowerPAK® MLP55-27
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: SYNC REG 6A MICROBUCK PP MLP55-2
Current - Output: 6A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
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Lieferzeit 21-28 Tag (e)
SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 si4435fdy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 12.6A 8SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIP32411DR-T1-GE3 SIP32411DR-T1-GE3 sip32411.pdf Vishay Siliconix Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIP32411
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 101mOhm
Current - Output (Max): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7129DN-T1-GE3 SI7129DN-T1-GE3 si7129dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 3345pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
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SIHG105N60EF-GE3 SIHG105N60EF-GE3 sihg105n60ef.pdf Vishay Siliconix Description: MOSFET EF SERIES TO-247AC
Base Part Number: SIHG105
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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Vishay Siliconix Description: MOSFET EF SERIES TO-247AC
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Base Part Number: SIHG105
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SIHB17N80E-T1-GE3 sihb17n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 15A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1031R-T1-GE3 SI1031R-T1-GE3 si1031r.pdf Vishay Siliconix Description: MOSFET P-CH 20V 0.14A SC-75A
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQJ407EP-T1_GE3 SQJ407EP-T1_GE3 sqj407ep.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI9241AEY-T1-E3 SI9241AEY-T1-E3 si9241.pdf Vishay Siliconix Description: IC TRANSCEIVER HALF 1/1 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Duplex: Half
Number of Drivers/Receivers: 1/1
Protocol: ISO 9141
Type: Transceiver
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120N03-1M5L_GE3 SQM120N03-1M5L_GE3 sqm120n031m5l.pdf Vishay Siliconix Description: MOSFET N-CH 30V 120A TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 15605pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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SIRA00DP-T1-GE3 SIRA00DP-T1-GE3 sira00dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 100A PPAK SO-8
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Base Part Number: SIRA00
Package / Case: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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SUD19N20-90-E3 SUD19N20-90-E3 71767.pdf Vishay Siliconix Description: MOSFET N-CH 200V 19A DPAK
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
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IRFR110TRPBF IRFR110TRPBF sihfr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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DG409LEDY-T1-GE3 DG409LEDY-T1-GE3 dg408le.pdf Vishay Siliconix Description: IC MUX CMOS DUAL 4CH 16-SOIC
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Charge Injection: -10pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
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DG409LEDQ-T1-GE3 DG409LEDQ-T1-GE3 dg408le.pdf Vishay Siliconix Description: IC MUX CMOS DUAL 4CH 16-TSSOP
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Charge Injection: -10pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 2
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DG409DQ-T1-E3 DG409DQ-T1-E3 dg408.pdf Vishay Siliconix Description: IC MULTIPLEXER DUAL 4X2 16TSSOP
Base Part Number: DG409
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Charge Injection: 20pC
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
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SIP32101DB-T1-GE1 SIP32101DB-T1-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Base Part Number: SIP321
Package / Case: 12-UFBGA, CSPBGA
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Rds On (Typ): 6.5mOhm
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI9435BDY-T1-GE3 SI9435BDY-T1-GE3 72245.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.1A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI7456DP-T1-E3 SI7456DP-T1-E3 71603.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
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SQJ402EP-T1_GE3 SQJ402EP-T1_GE3 sqj402ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V POWERPAK SO8L
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Vgs (Max): ±20V
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG2012EDL-T1-GE3 DG2012EDL-T1-GE3 dg2012e.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT SC70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 85°C
Crosstalk: -63dB @ 1MHz
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 16pF
Charge Injection: 8pC
-3db Bandwidth: 160MHz
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 300mOhm
On-State Resistance (Max): 1.6Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7619DN-T1-GE3 SI7619DN-T1-GE3 si7619dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 24A 1212-8 PPAK
Base Part Number: SI7619
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SI8800EDB-T2-E1 SI8800EDB-T2-E1 si8800edb.pdf Vishay Siliconix Description: MOSFET N-CH 20V MICROFOOT
Drain to Source Voltage (Vdss): 20V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI8800
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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SQD50P03-07_GE3 SQD50P03-07_GE3 sqd50p03.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 50A TO252AA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
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SQM50P03-07_GE3 SQM50P03-07_GE3 sqm50p03.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 50A TO263
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQM50P
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V
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SQD50P03-07-T4_GE3 sqd50p03.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
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SQM120P10_10M1LGE3 SQM120P10_10M1LGE3 sqm120p10-10m1l.pdf Vishay Siliconix Description: MOSFET P-CH 100V 120A TO263
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQ1912EH-T1_GE3 SQ1912EH-T1_GE3 sq1912eh.pdf Vishay Siliconix Description: MOSFET 2 N-CH 20V 800MA SC70-6
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Base Part Number: SQ1912
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1991 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1510 Stücke - Preis und Lieferfrist anzeigen
DG9411EDL-T1-GE3 DG9411EDL-T1-GE3 dg9411e.pdf Vishay Siliconix Description: IC ANALOG SWITCH SC70
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 200mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Channel Capacitance (CS(off), CD(off)): 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
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auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIA110DJ-T1-GE3 SIA110DJ-T1-GE3 sia110dj.pdf Vishay Siliconix Description: MOSFET N-CHAN 100V POWERPAK SC-7
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
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DG2002EDL-T1-GE3 DG2002EDL-T1-GE3 dg2002e.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT SC-70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Current - Leakage (IS(off)) (Max): 1.5nA
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
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auf Bestellung 2230 Stücke - Preis und Lieferfrist anzeigen
SIAA00DJ-T1-GE3 SIAA00DJ-T1-GE3 siaa00dj.pdf Vishay Siliconix Description: MOSFET N-CHAN 25V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
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SIR668ADP-T1-RE3 SIR668ADP-T1-RE3 sir668adp.pdf Vishay Siliconix Description: MOSFET N-CHAN 100V POWERPAK SO-8
Base Part Number: SIR668
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG442BDY-T1-E3 DG442BDY-T1-E3 72625.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Packaging: Cut Tape (CT)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG442
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG442
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DG442BDN-T1-E4 DG442BDN-T1-E4 72625.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16QFN
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG442
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Charge Injection: -1pC
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 80Ohm
Number of Circuits: 4
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16QFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)
Base Part Number: DG442
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DG442DY-E3 DG442DY-E3 dg441.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Charge Injection: -1pC
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Switch Circuit: SPST - NO
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: DG442
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG507BEQ-T1-GE3 DG507BEQ-T1-GE3 dg506b.pdf Vishay Siliconix Description: IC MUX ANA DUAL 16/8CH 28TSSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -84dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-TSSOP
-3db Bandwidth: 217MHz
On-State Resistance (Max): 300Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4436DY-T1-GE3 SI4436DY-T1-GE3 73664.pdf Vishay Siliconix Description: MOSFET N-CH 60V 8A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Base Part Number: SI4436
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 1982 Stücke
Lieferzeit 21-28 Tag (e)
SI4488DY-T1-GE3 SI4488DY-T1-GE3 71240.pdf Vishay Siliconix Description: MOSFET N-CH 150V 3.5A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4488
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SI2347DS-T1-GE3 SI2347DS-T1-GE3 si2347ds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5A SOT-23
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI2347
Package / Case: TO-236-3, SC-59, SOT-23-3
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SUD50P10-43L-GE3 SUD50P10-43L-GE3 sud50p10.pdf Vishay Siliconix Description: MOSFET P-CH 100V 37.1A TO252
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
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SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 si4501bd.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V/8V 8SOIC
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Power - Max: 4.5W, 3.1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI4214DDY-T1-GE3 SI4214DDY-T1-GE3 si4214ddy-t1-e3.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8.5A 8-SOIC
Base Part Number: SI4214
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIR112DP-T1-RE3 SIR112DP-T1-RE3 sir112dp.pdf Vishay Siliconix Description: MOSFET N-CHAN 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR112
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SI3590DV-T1-E3 SI3590DV-T1-E3 si3590dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3590
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
auf Bestellung 15150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 124 Stücke - Preis und Lieferfrist anzeigen
SI4590DY-T1-GE3 SI4590DY-T1-GE3 si4590dy.pdf Vishay Siliconix Description: MOSFET N/P CHAN 100V SO8 DUAL
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Drain to Source Voltage (Vdss): 100V
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4590
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
auf Bestellung 3330 Stücke
Lieferzeit 21-28 Tag (e)
SISS32DN-T1-GE3 SISS32DN-T1-GE3 siss32dn.pdf Vishay Siliconix Description: MOSFET N-CHAN 80-V POWERPAK 1212
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISS32
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 40V
Vgs (Max): ±20V
auf Bestellung 8898 Stücke
Lieferzeit 21-28 Tag (e)
SISS32LDN-T1-GE3 siss32ldn.pdf Vishay Siliconix Description: MOSFET N-CH 80V 17.4A/63A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
IRF630STRRPBF sih630s.pdf
IRF630STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6225 Stücke - Preis und Lieferfrist anzeigen
IRF630STRRPBF 91032.pdf
IRF630STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
auf Bestellung 425 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5800 Stücke - Preis und Lieferfrist anzeigen
IRF630S
IRF630S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
IRF630L sihf630p.pdf
IRF630L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: IRF630
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF630STRL
IRF630STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 200 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF630STRR
IRF630STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
SQM40061EL_GE3 sqm40061el.pdf
SQM40061EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Vgs (Max): ±20V
auf Bestellung 227 Stücke
Lieferzeit 21-28 Tag (e)
SQ7415AEN-T1_GE3 sq7415aen.pdf
SQ7415AEN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 16A 1212-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
FET Type: P-Channel
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
auf Bestellung 3527 Stücke
Lieferzeit 21-28 Tag (e)
SIZ918DT-T1-GE3 siz918dt.pdf
SIZ918DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ918
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5120 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 43314 Stücke - Preis und Lieferfrist anzeigen
SI4688DY-T1-GE3 si4688dy.pdf
SI4688DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD2N80AE-GE3 sihd2n80ae.pdf
SIHD2N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
auf Bestellung 3037 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 140 Stücke - Preis und Lieferfrist anzeigen
DG201BDY-T1-E3 dg201b.pdf
DG201BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Base Part Number: DG201
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
auf Bestellung 980 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6 Stücke - Preis und Lieferfrist anzeigen
DG201BDQ-T1-E3 dg201b.pdf
DG201BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Base Part Number: DG201
Supplier Device Package: 16-TSSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1180 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18443 Stücke - Preis und Lieferfrist anzeigen
DG201HSDQ-T1-E3 dg201hs.pdf
DG201HSDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG201
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Channel-to-Channel Matching (ΔRon): 1.5Ohm
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Dual (V±): ±15V
auf Bestellung 971 Stücke
Lieferzeit 21-28 Tag (e)
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DG201HSDY-T1-E3 dg201hs.pdf
DG201HSDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG201
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Channel-to-Channel Matching (ΔRon): 1.5Ohm
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Switch Circuit: SPST - NC
auf Bestellung 156 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1575 Stücke - Preis und Lieferfrist anzeigen
IRFR310TRLPBF sihfr310.pdf
IRFR310TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 2975 Stücke
Lieferzeit 21-28 Tag (e)
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SI7115DN-T1-GE3 si7115dn.pdf
SI7115DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A 1212-8
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10156 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25083 Stücke - Preis und Lieferfrist anzeigen
SISS30DN-T1-GE3 siss30dn.pdf
SISS30DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 80-V POWERPAK 1212
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Drain to Source Voltage (Vdss): 80V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1855 Stücke - Preis und Lieferfrist anzeigen
SIA447DJ-T1-GE3 sia447dj.pdf
SIA447DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC-70-6L
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
auf Bestellung 5712 Stücke
Lieferzeit 21-28 Tag (e)
SQJ479EP-T1_GE3 sqj479ep.pdf
SQJ479EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
auf Bestellung 3850 Stücke
Lieferzeit 21-28 Tag (e)
SI7454DDP-T1-GE3 si7454ddp.pdf
SI7454DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 21A PPAK SO-8
Base Part Number: SI7454
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3292 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6214 Stücke - Preis und Lieferfrist anzeigen
SI2343DS-T1-GE3 72079.pdf
SI2343DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT-23
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI2343
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6764 Stücke
Lieferzeit 21-28 Tag (e)
SQS407ENW-T1_GE3 sqs407enw.pdf
SQS407ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Package / Case: PowerPAK® 1212-8W
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4572pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS407
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6046 Stücke - Preis und Lieferfrist anzeigen
SQS407ENW-T1_GE3 sqs407enw.pdf
SQS407ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4572pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS407
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6046 Stücke - Preis und Lieferfrist anzeigen
SQS407ENW-T1_GE3 sqs407enw.pdf
SQS407ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V PPAK 1212-8W
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4572pF @ 20V
auf Bestellung 3046 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
DG9232EDY-GE3 dg9232e.pdf
DG9232EDY-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
auf Bestellung 465 Stücke
Lieferzeit 21-28 Tag (e)
SIB456DK-T1-GE3 sib456dk.pdf
SIB456DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A SC75-6L
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SIB456
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
auf Bestellung 26542 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13926 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRRPBF sihfr210.pdf
IRFR210TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI9986CY-T1-E3 si9986.pdf
SI9986CY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPOLAR 3.8-13.2V 8SO
Technology: Power MOSFET
Interface: Parallel
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 3.8V ~ 13.2V
Voltage - Load: 3.8V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1758 Stücke - Preis und Lieferfrist anzeigen
IRL510STRLPBF sihf510s.pdf
IRL510STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Base Part Number: IRL510
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
SI8424CDB-T1-E1 si8424cdb.pdf
SI8424CDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V MICROFOOT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 4V
Vgs (Max): ±5V
Base Part Number: SI8424
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIA437DJ-T1-GE3 sia437dj.pdf
SIA437DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 29.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 29.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SIA437
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
auf Bestellung 29442 Stücke
Lieferzeit 21-28 Tag (e)
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SI4464DY-T1-GE3 72051.pdf
SI4464DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8-SOIC
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3910 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 863 Stücke - Preis und Lieferfrist anzeigen
SI6423DQ-T1-GE3 72257.pdf
SI6423DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8-TSSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.05W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 7815 Stücke
Lieferzeit 21-28 Tag (e)
SIDR622DP-T1-GE3 sidr622dp.pdf
SIDR622DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 150V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8DC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
auf Bestellung 4955 Stücke
Lieferzeit 21-28 Tag (e)
SIHP186N60EF-GE3 sihp186n60ef.pdf
SIHP186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 18A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP186
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TN2404K-T1-GE3 tn2404k.pdf
TN2404K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA TO236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 5568 Stücke
Lieferzeit 21-28 Tag (e)
SI7190DP-T1-GE3 si7190dp.pdf
SI7190DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SI7190
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Drain to Source Voltage (Vdss): 250V
Input Capacitance (Ciss) (Max) @ Vds: 2214pF @ 125V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
auf Bestellung 1682 Stücke
Lieferzeit 21-28 Tag (e)
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SIC530CD-T1-GE3 sic530.pdf
SIC530CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC CTLR STAGE 30A 5V PWM PPAK ML
Supplier Device Package: POWERPAK® MLP4535-22L
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Fault Protection: UVLO
Features: Bootstrap Circuit, Diode Emulation
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 20V
Voltage - Supply: 4.5V ~ 5.5V
Current - Peak Output: 40A
Current - Output / Channel: 30A
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3360 Stücke
Lieferzeit 21-28 Tag (e)
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SUP50010E-GE3 sup50010e.pdf
SUP50010E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
3+ 8.81 EUR
10+ 7.9 EUR
100+ 6.48 EUR
SUM50010E-GE3 sum50010e.pdf
SUM50010E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO263
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SUM50010
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10895pF @ 30V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
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SIC467ED-T1-GE3 sic46x.pdf
SIC467ED-T1-GE3
Hersteller: Vishay Siliconix
Description: SYNC REG 6A MICROBUCK PP MLP55-2
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Base Part Number: SIC467
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 6A
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC467ED-T1-GE3 sic46x.pdf
SIC467ED-T1-GE3
Hersteller: Vishay Siliconix
Description: SYNC REG 6A MICROBUCK PP MLP55-2
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 6A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SIC467
Supplier Device Package: PowerPAK® MLP55-27
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SIC467ED-T1-GE3 sic46x.pdf
SIC467ED-T1-GE3
Hersteller: Vishay Siliconix
Description: SYNC REG 6A MICROBUCK PP MLP55-2
Current - Output: 6A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 100kHz ~ 2MHz
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SI4435FDY-T1-GE3 si4435fdy.pdf
SI4435FDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.6A 8SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIP32411DR-T1-GE3 sip32411.pdf
SIP32411DR-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIP32411
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 101mOhm
Current - Output (Max): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7129DN-T1-GE3 si7129dn.pdf
SI7129DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 3345pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
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SIHG105N60EF-GE3 sihg105n60ef.pdf
SIHG105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES TO-247AC
Base Part Number: SIHG105
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SIHG105N60EF-GE3 sihg105n60ef.pdf
SIHG105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES TO-247AC
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Base Part Number: SIHG105
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SIHB17N80E-T1-GE3 sihb17n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1031R-T1-GE3 si1031r.pdf
SI1031R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.14A SC-75A
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQJ407EP-T1_GE3 sqj407ep.pdf
SQJ407EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI9241AEY-T1-E3 si9241.pdf
SI9241AEY-T1-E3
Hersteller: Vishay Siliconix
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Duplex: Half
Number of Drivers/Receivers: 1/1
Protocol: ISO 9141
Type: Transceiver
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120N03-1M5L_GE3 sqm120n031m5l.pdf
SQM120N03-1M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 120A TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 15605pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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Lieferzeit 21-28 Tag (e)
SIRA00DP-T1-GE3 sira00dp.pdf
SIRA00DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Base Part Number: SIRA00
Package / Case: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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SUD19N20-90-E3 71767.pdf
SUD19N20-90-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 19A DPAK
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
IRFR110TRPBF sihfr110.pdf
IRFR110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 4184 Stücke
Lieferzeit 21-28 Tag (e)
DG409LEDY-T1-GE3 dg408le.pdf
DG409LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS DUAL 4CH 16-SOIC
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Charge Injection: -10pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
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Lieferzeit 21-28 Tag (e)
DG409LEDQ-T1-GE3 dg408le.pdf
DG409LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS DUAL 4CH 16-TSSOP
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Charge Injection: -10pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 2
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DG409DQ-T1-E3 dg408.pdf
DG409DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4X2 16TSSOP
Base Part Number: DG409
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Charge Injection: 20pC
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
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Lieferzeit 21-28 Tag (e)
SIP32101DB-T1-GE1 sip32101.pdf
SIP32101DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Base Part Number: SIP321
Package / Case: 12-UFBGA, CSPBGA
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Rds On (Typ): 6.5mOhm
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9431 Stücke
Lieferzeit 21-28 Tag (e)
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SI9435BDY-T1-GE3 72245.pdf
SI9435BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.1A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 158 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
SI7456DP-T1-E3 71603.pdf
SI7456DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
auf Bestellung 32276 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200452 Stücke - Preis und Lieferfrist anzeigen
SQJ402EP-T1_GE3 sqj402ep.pdf
SQJ402EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V POWERPAK SO8L
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Vgs (Max): ±20V
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10960 Stücke
Lieferzeit 21-28 Tag (e)
DG2012EDL-T1-GE3 dg2012e.pdf
DG2012EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT SC70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 85°C
Crosstalk: -63dB @ 1MHz
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 16pF
Charge Injection: 8pC
-3db Bandwidth: 160MHz
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 300mOhm
On-State Resistance (Max): 1.6Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1022 Stücke - Preis und Lieferfrist anzeigen
SI7619DN-T1-GE3 si7619dn.pdf
SI7619DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 24A 1212-8 PPAK
Base Part Number: SI7619
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 21891 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4420 Stücke - Preis und Lieferfrist anzeigen
SI8800EDB-T2-E1 si8800edb.pdf
SI8800EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V MICROFOOT
Drain to Source Voltage (Vdss): 20V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI8800
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 30454 Stücke
Lieferzeit 21-28 Tag (e)
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SQD50P03-07_GE3 sqd50p03.pdf
SQD50P03-07_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1975 Stücke - Preis und Lieferfrist anzeigen
SQD50P03-07_GE3 sqd50p03.pdf
SQD50P03-07_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 1975 Stücke
Lieferzeit 21-28 Tag (e)
SQM50P03-07_GE3 sqm50p03.pdf
SQM50P03-07_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 50A TO263
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQM50P
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V
auf Bestellung 282 Stücke
Lieferzeit 21-28 Tag (e)
SQD50P03-07-T4_GE3 sqd50p03.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120P10_10M1LGE3 sqm120p10-10m1l.pdf
SQM120P10_10M1LGE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO263
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 117 Stücke
Lieferzeit 21-28 Tag (e)
SQ1912EH-T1_GE3 sq1912eh.pdf
SQ1912EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 20V 800MA SC70-6
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Base Part Number: SQ1912
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1991 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1510 Stücke - Preis und Lieferfrist anzeigen
DG9411EDL-T1-GE3 dg9411e.pdf
DG9411EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 200mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Channel Capacitance (CS(off), CD(off)): 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIA110DJ-T1-GE3 sia110dj.pdf
SIA110DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 100V POWERPAK SC-7
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 5588 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2184 Stücke - Preis und Lieferfrist anzeigen
DG2002EDL-T1-GE3 dg2002e.pdf
DG2002EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT SC-70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Current - Leakage (IS(off)) (Max): 1.5nA
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 3102 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2230 Stücke - Preis und Lieferfrist anzeigen
SIAA00DJ-T1-GE3 siaa00dj.pdf
SIAA00DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
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SIR668ADP-T1-RE3 sir668adp.pdf
SIR668ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 100V POWERPAK SO-8
Base Part Number: SIR668
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5849 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19318 Stücke - Preis und Lieferfrist anzeigen
DG442BDY-T1-E3 72625.pdf
DG442BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Packaging: Cut Tape (CT)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG442
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DG442BDY-T1-E3 72625.pdf
DG442BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG442
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DG442BDN-T1-E4 72625.pdf
DG442BDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16QFN
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG442
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Charge Injection: -1pC
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 80Ohm
Number of Circuits: 4
auf Bestellung 2200 Stücke
Lieferzeit 21-28 Tag (e)
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DG442BDN-T1-E4 72625.pdf
DG442BDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16QFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)
Base Part Number: DG442
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DG442DY-E3 dg441.pdf
DG442DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Charge Injection: -1pC
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Switch Circuit: SPST - NO
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: DG442
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG507BEQ-T1-GE3 dg506b.pdf
DG507BEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 16/8CH 28TSSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -84dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-TSSOP
-3db Bandwidth: 217MHz
On-State Resistance (Max): 300Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4436DY-T1-GE3 73664.pdf
SI4436DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Base Part Number: SI4436
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 1982 Stücke
Lieferzeit 21-28 Tag (e)
SI4488DY-T1-GE3 71240.pdf
SI4488DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4488
auf Bestellung 868 Stücke
Lieferzeit 21-28 Tag (e)
SI2347DS-T1-GE3 si2347ds.pdf
SI2347DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5A SOT-23
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI2347
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 216 Stücke
Lieferzeit 21-28 Tag (e)
SUD50P10-43L-GE3 sud50p10.pdf
SUD50P10-43L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4347 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1698 Stücke - Preis und Lieferfrist anzeigen
SI4501BDY-T1-GE3 si4501bd.pdf
SI4501BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Power - Max: 4.5W, 3.1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3315 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1719 Stücke - Preis und Lieferfrist anzeigen
SI4214DDY-T1-GE3 si4214ddy-t1-e3.pdf
SI4214DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8-SOIC
Base Part Number: SI4214
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2211 Stücke
Lieferzeit 21-28 Tag (e)
SIR112DP-T1-RE3 sir112dp.pdf
SIR112DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR112
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SI3590DV-T1-E3 si3590dv.pdf
SI3590DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3590
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
auf Bestellung 15150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 124 Stücke - Preis und Lieferfrist anzeigen
SI4590DY-T1-GE3 si4590dy.pdf
SI4590DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 100V SO8 DUAL
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Drain to Source Voltage (Vdss): 100V
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4590
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.4W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
auf Bestellung 3330 Stücke
Lieferzeit 21-28 Tag (e)
SISS32DN-T1-GE3 siss32dn.pdf
SISS32DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 80-V POWERPAK 1212
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISS32
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 40V
Vgs (Max): ±20V
auf Bestellung 8898 Stücke
Lieferzeit 21-28 Tag (e)
SISS32LDN-T1-GE3 siss32ldn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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