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DG612DJ DG612DJ Vishay Siliconix DG611-13.pdf Description: IC SWITCH QUAD SPST 16-DIP
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DG612DY DG612DY Vishay Siliconix DG611-13.pdf Description: IC SWITCH QUAD SPST 16-SOIC
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DG612DY-T1 DG612DY-T1 Vishay Siliconix DG611-13.pdf Description: IC SWITCH QUAD SPST 16-SOIC
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DG613DJ DG613DJ Vishay Siliconix DG611-13.pdf Description: IC SWITCH SPST X 4 45OHM 16DIP
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -87dB @ 10MHz
Charge Injection: 4pC
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10V ~ 18V
Supplier Device Package: 16-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG613DY DG613DY Vishay Siliconix DG611-13.pdf Description: IC SWITCH SPST X 4 45OHM 16SOIC
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -87dB @ 10MHz
Charge Injection: 4pC
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10V ~ 18V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Switch Time (Ton, Toff) (Max): 35ns, 25ns
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DG613DY-T1 DG613DY-T1 Vishay Siliconix DG611-13.pdf Description: IC SWITCH SPST X 4 45OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -87dB @ 10MHz
Charge Injection: 4pC
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10V ~ 18V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG641DJ DG641DJ Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPST-NOX4 15OHM 16DIP
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
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DG641DY DG641DY Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG641DY-T1 DG641DY-T1 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG642DJ DG642DJ Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 1 8OHM 8DIP
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -85dB @ 5MHz
Charge Injection: 40pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 8-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
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DG642DY DG642DY Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -85dB @ 5MHz
Charge Injection: 40pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 8-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG642DY-T1 DG642DY-T1 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -85dB @ 5MHz
Charge Injection: 40pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 8-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG643DJ DG643DJ Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 2 15OHM 16DIP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG643DY DG643DY Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG643DY-T1 DG643DY-T1 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG721DN-T1-GE4 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NOX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
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DG722DN-T1-GE4 Vishay Siliconix Description: IC SWITCH SPST-NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 2
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DG723DN-T1-GE4 Vishay Siliconix Description: IC SW SPST-NO/NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
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DG884DN Vishay Siliconix dg884.pdf Description: IC VIDEO MULTIPLEXER 8X4 44PLCC
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DG9232DY DG9232DY Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9232DY-T1 DG9232DY-T1 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DY DG9233DY Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DY-T1 DG9233DY-T1 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DY DG9262DY Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DY-T1 DG9262DY-T1 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DY DG9263DY Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DY-T1 DG9263DY-T1 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9424DQ-T1 DG9424DQ-T1 Vishay Siliconix dg9424.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG9431DV-T1 DG9431DV-T1 Vishay Siliconix dg9431.pdf Description: IC SWITCH SPDT X 1 30OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5V
Charge Injection: 2pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 1
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DG9431DY DG9431DY Vishay Siliconix dg9431.pdf Description: IC SWITCH SPDT X 1 30OHM 8SOIC
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
On-State Resistance (Max): 30Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100pA
Charge Injection: 2pC
Voltage - Supply, Single (V+): 2.7V ~ 5V
Supplier Device Package: 8-SOIC
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DG9431DY-T1 DG9431DY-T1 Vishay Siliconix dg9431.pdf Description: IC SWITCH SPDT X 1 30OHM 8SOIC
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 2pC
Voltage - Supply, Single (V+): 2.7V ~ 5V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 30Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG9453EN-T1-E4 DG9453EN-T1-E4 Vishay Siliconix dg9451.pdf Description: IC SWITCH DUAL SPST 16QFN
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DG9461DY DG9461DY Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 8SOIC
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DG9461DY-T1 DG9461DY-T1 Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 8SOIC
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DG9636DN-T1-E4 DG9636DN-T1-E4 Vishay Siliconix dg9636.pdf Description: IC SW SPDTX2 110OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 4Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 23.5pC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 110Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
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IRF840LCSTRRPBF IRF840LCSTRRPBF Vishay Siliconix sihf840l.pdf Description: MOSFET N-CH 500V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRFBF30STRLPBF IRFBF30STRLPBF Vishay Siliconix sihbf30s.pdf Description: MOSFET N-CH 900V 3.6A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Mindestbestellmenge: 800
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IRFD113PBF IRFD113PBF Vishay Siliconix sihfd113.pdf Description: MOSFET N-CH 60V 800MA 4DIP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
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IRFP21N60L IRFP21N60L Vishay Siliconix Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IRFP22N60K IRFP22N60K Vishay Siliconix Description: MOSFET N-CH 600V 22A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRFP26N60L IRFP26N60L Vishay Siliconix Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
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IRFP27N60K IRFP27N60K Vishay Siliconix Description: MOSFET N-CH 600V 27A TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
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IRFPS38N60L IRFPS38N60L Vishay Siliconix sihfps38n60l.pdf Description: MOSFET N-CH 600V 38A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
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IRFPS40N60K IRFPS40N60K Vishay Siliconix sihfps40n60k.pdf Description: MOSFET N-CH 600V 40A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
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IRFS11N50ATRLP IRFS11N50ATRLP Vishay Siliconix 91286.pdf Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
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IRFS11N50ATRRP IRFS11N50ATRRP Vishay Siliconix 91286.pdf Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ24STRLPBF IRFZ24STRLPBF Vishay Siliconix doc?98237 Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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SI1012CR-T1-GE3 SI1012CR-T1-GE3 Vishay Siliconix si1012cr.pdf Description: MOSFET N-CH 20V SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Power Dissipation (Max): 240mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
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SI1013CX-T1-GE3 SI1013CX-T1-GE3 Vishay Siliconix si1013cx.pdf Description: MOSFET P-CH 20V 450MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 190mW (Ta)
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
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SI1016CX-T1-GE3 SI1016CX-T1-GE3 Vishay Siliconix si1016cx.pdf Description: MOSFET N/P-CH 20V SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
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SI1028X-T1-GE3 Vishay Siliconix si1028x.pdf Description: MOSFET 2N-CH 30V SC89-6
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SI1077X-T1-GE3 SI1077X-T1-GE3 Vishay Siliconix si1077x.pdf Description: MOSFET P-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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SI1317DL-T1-GE3 SI1317DL-T1-GE3 Vishay Siliconix si1317dl.pdf Description: MOSFET P-CH 20V 1.4A SOT323
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 500mW (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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SI1414DH-T1-GE3 SI1414DH-T1-GE3 Vishay Siliconix si1414dh.pdf Description: MOSFET N-CH 30V 4A SOT-363
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SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 Vishay Siliconix si1424ed.pdf Description: MOSFET N-CH 20V 4A SOT-363
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1441EDH-T1-GE3 SI1441EDH-T1-GE3 Vishay Siliconix si1441ed.pdf Description: MOSFET P-CH 20V 4A SOT-363
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SI1443EDH-T1-GE3 SI1443EDH-T1-GE3 Vishay Siliconix si1443edh.pdf Description: MOSFET P-CH 30V 4A SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
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SI1489EDH-T1-GE3 SI1489EDH-T1-GE3 Vishay Siliconix si1489ed.pdf Description: MOSFET P-CH 8V 2A SOT-363
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SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 Vishay Siliconix si1539cdl.pdf Description: MOSFET N/P-CH 30V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
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SI1553CDL-T1-GE3 SI1553CDL-T1-GE3 Vishay Siliconix si1553cdl.pdf Description: MOSFET N/P-CH 20V 0.7A SC70-6
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 340mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
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DG612DJ DG611-13.pdf
DG612DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
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DG612DY DG611-13.pdf
DG612DY
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
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DG612DY-T1 DG611-13.pdf
DG612DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
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DG613DJ DG611-13.pdf
DG613DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 4 45OHM 16DIP
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -87dB @ 10MHz
Charge Injection: 4pC
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10V ~ 18V
Supplier Device Package: 16-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG613DY DG611-13.pdf
DG613DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 4 45OHM 16SOIC
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -87dB @ 10MHz
Charge Injection: 4pC
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10V ~ 18V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Switch Time (Ton, Toff) (Max): 35ns, 25ns
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DG613DY-T1 DG611-13.pdf
DG613DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 4 45OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -87dB @ 10MHz
Charge Injection: 4pC
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10V ~ 18V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG641DJ DG641-643.pdf
DG641DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16DIP
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
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DG641DY DG641-643.pdf
DG641DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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DG641DY-T1 DG641-643.pdf
DG641DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG642DJ DG641-643.pdf
DG642DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8DIP
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -85dB @ 5MHz
Charge Injection: 40pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 8-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
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DG642DY DG641-643.pdf
DG642DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -85dB @ 5MHz
Charge Injection: 40pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 8-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DG642DY-T1 DG641-643.pdf
DG642DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -85dB @ 5MHz
Charge Injection: 40pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 8-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG643DJ DG641-643.pdf
DG643DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16DIP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-PDIP
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG643DY DG641-643.pdf
DG643DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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DG643DY-T1 DG641-643.pdf
DG643DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -87dB @ 5MHz
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 500MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG721DN-T1-GE4 49281_pt0315.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
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DG722DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 2
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DG723DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
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DG884DN dg884.pdf
Hersteller: Vishay Siliconix
Description: IC VIDEO MULTIPLEXER 8X4 44PLCC
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DG9232DY dg9232.pdf
DG9232DY
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
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DG9232DY-T1 dg9232.pdf
DG9232DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DY dg9232.pdf
DG9233DY
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DY-T1 dg9232.pdf
DG9233DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DY dg9262.pdf
DG9262DY
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
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DG9262DY-T1 dg9262.pdf
DG9262DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DY dg9262.pdf
DG9263DY
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DY-T1 dg9262.pdf
DG9263DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9424DQ-T1 dg9424.pdf
DG9424DQ-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
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DG9431DV-T1 dg9431.pdf
DG9431DV-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 30OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5V
Charge Injection: 2pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 1
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DG9431DY dg9431.pdf
DG9431DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 30OHM 8SOIC
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
On-State Resistance (Max): 30Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100pA
Charge Injection: 2pC
Voltage - Supply, Single (V+): 2.7V ~ 5V
Supplier Device Package: 8-SOIC
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DG9431DY-T1 dg9431.pdf
DG9431DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 30OHM 8SOIC
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 2pC
Voltage - Supply, Single (V+): 2.7V ~ 5V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 30Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG9453EN-T1-E4 dg9451.pdf
DG9453EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 16QFN
Produkt ist nicht verfügbar
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DG9461DY dg9461.pdf
DG9461DY
Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 8SOIC
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DG9461DY-T1 dg9461.pdf
DG9461DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 8SOIC
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DG9636DN-T1-E4 dg9636.pdf
DG9636DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 110OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 4Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 23.5pC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 110Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF840LCSTRRPBF sihf840l.pdf
IRF840LCSTRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRFBF30STRLPBF sihbf30s.pdf
IRFBF30STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.54 EUR
Mindestbestellmenge: 800
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IRFD113PBF sihfd113.pdf
IRFD113PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 800MA 4DIP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.07 EUR
100+2.12 EUR
500+1.71 EUR
1000+1.58 EUR
2000+1.47 EUR
Mindestbestellmenge: 4
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IRFP21N60L
IRFP21N60L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IRFP22N60K
IRFP22N60K
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFP26N60L
IRFP26N60L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Produkt ist nicht verfügbar
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IRFP27N60K
IRFP27N60K
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 27A TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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IRFPS38N60L sihfps38n60l.pdf
IRFPS38N60L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 38A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRFPS40N60K sihfps40n60k.pdf
IRFPS40N60K
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRFS11N50ATRLP 91286.pdf
IRFS11N50ATRLP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS11N50ATRRP 91286.pdf
IRFS11N50ATRRP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFZ24STRLPBF doc?98237
IRFZ24STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
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SI1012CR-T1-GE3 si1012cr.pdf
SI1012CR-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Power Dissipation (Max): 240mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
15000+0.13 EUR
30000+0.12 EUR
Mindestbestellmenge: 3000
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SI1013CX-T1-GE3 si1013cx.pdf
SI1013CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 450MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 190mW (Ta)
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
21000+0.097 EUR
Mindestbestellmenge: 3000
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SI1016CX-T1-GE3 si1016cx.pdf
SI1016CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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SI1028X-T1-GE3 si1028x.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V SC89-6
Produkt ist nicht verfügbar
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SI1077X-T1-GE3 si1077x.pdf
SI1077X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1317DL-T1-GE3 si1317dl.pdf
SI1317DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SOT323
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 500mW (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
15000+0.17 EUR
Mindestbestellmenge: 3000
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SI1414DH-T1-GE3 si1414dh.pdf
SI1414DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A SOT-363
Produkt ist nicht verfügbar
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SI1424EDH-T1-GE3 si1424ed.pdf
SI1424EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4A SOT-363
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
Mindestbestellmenge: 3000
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SI1441EDH-T1-GE3 si1441ed.pdf
SI1441EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A SOT-363
auf Bestellung 1939 Stücke:
Lieferzeit 10-14 Tag (e)
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SI1443EDH-T1-GE3 si1443edh.pdf
SI1443EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.22 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000
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SI1489EDH-T1-GE3 si1489ed.pdf
SI1489EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 2A SOT-363
Produkt ist nicht verfügbar
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SI1539CDL-T1-GE3 si1539cdl.pdf
SI1539CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 83250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
9000+0.16 EUR
15000+0.15 EUR
30000+0.14 EUR
75000+0.13 EUR
Mindestbestellmenge: 3000
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SI1553CDL-T1-GE3 si1553cdl.pdf
SI1553CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.7A SC70-6
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 340mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
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