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SIHF068N60EF-GE3 SIHF068N60EF-GE3 sihf068n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 16A TO220
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
auf Bestellung 866 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.88 EUR
10+ 12.46 EUR
100+ 10.21 EUR
500+ 8.69 EUR
SQSA80ENW-T1_GE3 SQSA80ENW-T1_GE3 sqsa80enw.pdf Vishay Siliconix Description: MOSFET N-CH 80V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQSA80
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG445DY-T1-E3 DG445DY-T1-E3 dg444.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2497 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
5+ 5.95 EUR
10+ 5.37 EUR
25+ 5.06 EUR
100+ 4.32 EUR
250+ 4.05 EUR
500+ 3.55 EUR
1000+ 3.15 EUR
DG445DY-E3 DG445DY-E3 dg444.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67 Stücke - Preis und Lieferfrist anzeigen
5+ 5.95 EUR
10+ 5.37 EUR
25+ 5.06 EUR
100+ 4.32 EUR
250+ 4.05 EUR
500+ 3.55 EUR
DG604EEQ-T1-GE4 DG604EEQ-T1-GE4 dg604e.pdf Vishay Siliconix Description: IC MULTIPLEXER 14TSSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC MULTIPLEXER 14TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Number of Circuits: 2
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 231 Stücke
Lieferzeit 21-28 Tag (e)
SI4455DY-T1-E3 SI4455DY-T1-E3 si4455dy.pdf Vishay Siliconix Description: MOSFET P-CH 150V 2.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4455
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 105000 Stücke - Preis und Lieferfrist anzeigen
SUD23N06-31-BE3 SUD23N06-31-BE3 Vishay Siliconix Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD23N06-31L_GE3 SQD23N06-31L_GE3 sqd23n06-31l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 23A TO252
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQD23N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 23A TO252
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SQD23N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2842 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9120TRLPBF-BE3 IRFR9120TRLPBF-BE3 Vishay Siliconix Description: MOSFET P-CH 100V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB186N60EF-GE3 sihb186n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 8.4A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.51 EUR
10+ 6.76 EUR
100+ 5.54 EUR
500+ 4.71 EUR
1000+ 4.26 EUR
SIHP15N80AE-GE3 SIHP15N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 13A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.71 EUR
10+ 6.04 EUR
IRFR420TRPBF-BE3 IRFR420TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 500V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR608DP-T1-RE3 sidr608dp.pdf Vishay Siliconix Description: MOSFET N-CH 45V 51A/208A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4932DY-T1-GE3 SI4932DY-T1-GE3 si4932dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD100N04-3M6_GE3 SQD100N04-3M6_GE3 sqd100n04-3m6.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO252AA
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD100N04-3M6L_GE3 SQD100N04-3M6L_GE3 sqd100n04-3m6l.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7002E 2N7002E 70860.pdf Vishay Siliconix Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5735 Stücke - Preis und Lieferfrist anzeigen
2N7002-E3 2N7002-E3 70226.pdf Vishay Siliconix Description: MOSFET N-CH 60V 115MA TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR680ADP-T1-RE3 SIR680ADP-T1-RE3 sir680adp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 30.7A/125A PPAK
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIR680
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 30.7A/125A PPAK
Vgs (Max): ±20V
Base Part Number: SIR680
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3064 Stücke
Lieferzeit 21-28 Tag (e)
SI4200DY-T1-GE3 SI4200DY-T1-GE3 si4200dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4200
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4200
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
SIRC18DP-T1-GE3 SIRC18DP-T1-GE3 sirc18dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 1.57 EUR
Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5996 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.08 EUR
100+ 2.4 EUR
500+ 1.98 EUR
1000+ 1.57 EUR
SIZ980BDT-T1-GE3 siz980bdt.pdf Vishay Siliconix Description: MOSFET DUAL N-CH 30V PPAIR 6 X 5
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual), Schottky
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG636EEQ-T1-GE3 DG636EEQ-T1-GE3 dg636e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 14TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 96Ohm
Channel-to-Channel Matching (ΔRon): 300mOhm
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Switch Time (Ton, Toff) (Max): 46ns, 55ns
-3db Bandwidth: 700MHz
Charge Injection: -0.33pC
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -62dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2348ES-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 30V 8A SOT-23
Power Dissipation (Max): 3W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF510PBF-BE3 IRF510PBF-BE3 sihf510.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD19N20-90-BE3 SUD19N20-90-BE3 Vishay Siliconix Description: MOSFET N-CH 200V 19A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ960EL-T1_GE3 SQJQ960EL-T1_GE3 sqjq960el.pdf Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK8X8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power - Max: 71W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Base Part Number: SQJQ960
auf Bestellung 1691 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK8X8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power - Max: 71W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Base Part Number: SQJQ960
auf Bestellung 1691 Stücke
Lieferzeit 21-28 Tag (e)
SUD19P06-60-BE3 SUD19P06-60-BE3 Vishay Siliconix Description: MOSFET P-CH 60V 18.3A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR846BDP-T1-RE3 SIR846BDP-T1-RE3 sir846bdp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR846
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Base Part Number: SIR846
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5721 Stücke
Lieferzeit 21-28 Tag (e)
SIE808DF-T1-E3 SIE808DF-T1-E3 sie808df.pdf Vishay Siliconix Description: MOSFET N-CH 20V 60A 10-POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE808
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6768 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 60A 10-POLARPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE808
auf Bestellung 1038 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6768 Stücke - Preis und Lieferfrist anzeigen
SUD50P04-08-BE3 SUD50P04-08-BE3 Vishay Siliconix Description: MOSFET P-CH 40V 50A DPAK
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-09L_T4GE3 sqd50p04.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS02DN-T1-GE3 SISS02DN-T1-GE3 siss02dn.pdf Vishay Siliconix Description: MOSFET N-CH 25V 51A/80A PPAK
Base Part Number: SISS02
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 25V 51A/80A PPAK
Vgs (Max): +16V, -12V
Base Part Number: SISS02
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1314 Stücke
Lieferzeit 21-28 Tag (e)
SQA470EEJ-T1_GE3 SQA470EEJ-T1_GE3 sqa470eej.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.25A PPAK SC70
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 2.25A PPAK SC70
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 127 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.59 EUR
20+ 1.37 EUR
100+ 1.02 EUR
SQ2364EES-T1_GE3 SQ2364EES-T1_GE3 sq2364ees.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2364
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 36000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 2A SOT23-3
Base Part Number: SQ2364
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
auf Bestellung 39357 Stücke
Lieferzeit 21-28 Tag (e)
SIS106DN-T1-GE3 SIS106DN-T1-GE3 sis106dn.pdf Vishay Siliconix Description: MOSFET N-CHAN 60V POWERPAK 1212-
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIS106
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CHAN 60V POWERPAK 1212-
Base Part Number: SIS106
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5523 Stücke
Lieferzeit 21-28 Tag (e)
SISS30LDN-T1-GE3 SISS30LDN-T1-GE3 siss30ldn.pdf Vishay Siliconix Description: MOSFET N-CH 80V 16A/55.5A PPAK
Base Part Number: SISS30
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ456EP-T1_GE3 SQJ456EP-T1_GE3 sqj456ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3342pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ456
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3342pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ456
auf Bestellung 2722 Stücke
Lieferzeit 21-28 Tag (e)
SQJ456EP-T2_GE3 SQJ456EP.pdf Vishay Siliconix Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3342pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ456
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB422EDK-T4-GE3 sib422edk.pdf Vishay Siliconix Description: MOSFET N-CH 20V 7.1A/9A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±8V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6
Package / Case: PowerPAK® SC-75-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4058DY-T1-GE3 SI4058DY-T1-GE3 si4058dy.pdf Vishay Siliconix Description: Description: MOSFET N-CH 100V 10.3A 8SOIC
Base Part Number: SI4058
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Base Part Number: SI4058
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR110TRPBF-BE3 IRFR110TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM35N30-97_GE3 SQM35N30-97_GE3 sqm35n30-97.pdf Vishay Siliconix Description: MOSFET N-CH 300V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 10A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH070N60EF-T1GE3 SIHH070N60EF-T1GE3 sihh070n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 36A PPAK 8 X 8
Base Part Number: SIHH070
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2647pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2303ES-T1_GE3 SQ2303ES-T1_GE3 sq2303es.pdf Vishay Siliconix Description: MOSFET P-CHAN 30V SOT23
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQ2303
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6596 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIC652CD-T1-GE3 SIC652CD-T1-GE3 sic652.pdf Vishay Siliconix Description: IC POWER STAGE 55A MLP31-55
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 55A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC POWER STAGE 55A MLP31-55
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 55A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.33 EUR
25+ 5.99 EUR
IRLL014TRPBF-BE3 IRLL014TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 60V 2.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 119 Stücke
Lieferzeit 21-28 Tag (e)
SQM100P10-19L_GE3 SQM100P10-19L_GE3 sqm100p10-19l.pdf Vishay Siliconix Description: MOSFET P-CH 100V 93A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR404DP-T1-GE3 SIR404DP-T1-GE3 sir404dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 4.5 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
auf Bestellung 70 Stücke
Lieferzeit 21-28 Tag (e)
6+ 5.12 EUR
10+ 4.6 EUR
DG509BEN-T1-GE4 DG509BEN-T1-GE4 dg508b.pdf Vishay Siliconix Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: DG509
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
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Vishay Siliconix Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG509
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
auf Bestellung 2486 Stücke
Lieferzeit 21-28 Tag (e)
DG4053EEY-T1-GE3 DG4053EEY-T1-GE3 dg4051e.pdf Vishay Siliconix Description: IC MUX TRIPLE 2CHAN 16-SOIC
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel-to-Channel Matching (ΔRon): 910mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -105dB @ 100kHz
Charge Injection: 0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 930MHz
On-State Resistance (Max): 78Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
auf Bestellung 15000 Stücke
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2500+ 2.07 EUR
Vishay Siliconix Description: IC MUX TRIPLE 2CHAN 16-SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel-to-Channel Matching (ΔRon): 910mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -105dB @ 100kHz
Charge Injection: 0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 930MHz
On-State Resistance (Max): 78Ohm
Operating Temperature: -40°C ~ 125°C (TA)
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100+ 2.83 EUR
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1000+ 2.07 EUR
IRFR310TRPBF-BE3 IRFR310TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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9+ 2.96 EUR
10+ 2.64 EUR
100+ 2.06 EUR
SQJ488EP-T1_GE3 SQJ488EP-T1_GE3 sqj488ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V 42A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC621CD-T1-GE3 SIC621CD-T1-GE3 sic621.pdf Vishay Siliconix Description: 60A VRPOWER(DRMOS)INTEGRATED POW
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 60A
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3000+ 6.12 EUR
Vishay Siliconix Description: 60A VRPOWER(DRMOS)INTEGRATED POW
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 60A
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10+ 9.36 EUR
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100+ 7.67 EUR
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500+ 6.53 EUR
1000+ 6.12 EUR
SIRA58ADP-T1-RE3 SIRA58ADP-T1-RE3 sira58adp.pdf Vishay Siliconix Description: MOSFET N-CH 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA58
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Vishay Siliconix Description: MOSFET N-CH 40V 32.3A/109A PPAK
Base Part Number: SIRA58
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIRA50ADP-T1-RE3 SIRA50ADP-T1-RE3 sira50adp.pdf Vishay Siliconix Description: MOSFET N-CHAN 40V PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA50
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Vishay Siliconix Description: MOSFET N-CHAN 40V PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA50
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Lieferzeit 21-28 Tag (e)
SIRA14BDP-T1-GE3 SIRA14BDP-T1-GE3 sira14bdp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 21A/64A PPAK SO8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 917pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 21A/64A PPAK SO8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 917pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SIHF068N60EF-GE3 sihf068n60ef.pdf
SIHF068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A TO220
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
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2+ 13.88 EUR
10+ 12.46 EUR
100+ 10.21 EUR
500+ 8.69 EUR
SQSA80ENW-T1_GE3 sqsa80enw.pdf
SQSA80ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQSA80
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG445DY-T1-E3 dg444.pdf
DG445DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG445DY-T1-E3 dg444.pdf
DG445DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
5+ 5.95 EUR
10+ 5.37 EUR
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500+ 3.55 EUR
1000+ 3.15 EUR
DG445DY-E3 dg444.pdf
DG445DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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10+ 5.37 EUR
25+ 5.06 EUR
100+ 4.32 EUR
250+ 4.05 EUR
500+ 3.55 EUR
DG604EEQ-T1-GE4 dg604e.pdf
DG604EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 14TSSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG604EEQ-T1-GE4 dg604e.pdf
DG604EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 14TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Number of Circuits: 2
Supplier Device Package: 14-TSSOP
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 231 Stücke
Lieferzeit 21-28 Tag (e)
SI4455DY-T1-E3 si4455dy.pdf
SI4455DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4455
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUD23N06-31-BE3
SUD23N06-31-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD23N06-31L_GE3 sqd23n06-31l.pdf
SQD23N06-31L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23A TO252
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQD23N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
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SQD23N06-31L_GE3 sqd23n06-31l.pdf
SQD23N06-31L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23A TO252
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SQD23N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2842 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRFR9120TRLPBF-BE3
IRFR9120TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB186N60EF-GE3 sihb186n60ef.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.51 EUR
10+ 6.76 EUR
100+ 5.54 EUR
500+ 4.71 EUR
1000+ 4.26 EUR
SIHP15N80AE-GE3
SIHP15N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 13A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.71 EUR
10+ 6.04 EUR
IRFR420TRPBF-BE3
IRFR420TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR608DP-T1-RE3 sidr608dp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4932DY-T1-GE3 si4932dy.pdf
SI4932DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD100N04-3M6_GE3 sqd100n04-3m6.pdf
SQD100N04-3M6_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252AA
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD100N04-3M6L_GE3 sqd100n04-3m6l.pdf
SQD100N04-3M6L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7002E 70860.pdf
2N7002E
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5735 Stücke - Preis und Lieferfrist anzeigen
2N7002-E3 70226.pdf
2N7002-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR680ADP-T1-RE3 sir680adp.pdf
SIR680ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIR680
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3064 Stücke - Preis und Lieferfrist anzeigen
SIR680ADP-T1-RE3 sir680adp.pdf
SIR680ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Vgs (Max): ±20V
Base Part Number: SIR680
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3064 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4200DY-T1-GE3 si4200dy.pdf
SI4200DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4200
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SI4200DY-T1-GE3 si4200dy.pdf
SI4200DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4200
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
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SIRC18DP-T1-GE3 sirc18dp.pdf
SIRC18DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5996 Stücke - Preis und Lieferfrist anzeigen
3000+ 1.57 EUR
SIRC18DP-T1-GE3 sirc18dp.pdf
SIRC18DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5996 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
8+ 3.43 EUR
10+ 3.08 EUR
100+ 2.4 EUR
500+ 1.98 EUR
1000+ 1.57 EUR
SIZ980BDT-T1-GE3 siz980bdt.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V PPAIR 6 X 5
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual), Schottky
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG636EEQ-T1-GE3 dg636e.pdf
DG636EEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 14TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 96Ohm
Channel-to-Channel Matching (ΔRon): 300mOhm
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Switch Time (Ton, Toff) (Max): 46ns, 55ns
-3db Bandwidth: 700MHz
Charge Injection: -0.33pC
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -62dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2348ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A SOT-23
Power Dissipation (Max): 3W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF510PBF-BE3 sihf510.pdf
IRF510PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD19N20-90-BE3
SUD19N20-90-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 19A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ960EL-T1_GE3 sqjq960el.pdf
SQJQ960EL-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK8X8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power - Max: 71W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Base Part Number: SQJQ960
auf Bestellung 1691 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1691 Stücke - Preis und Lieferfrist anzeigen
SQJQ960EL-T1_GE3 sqjq960el.pdf
SQJQ960EL-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK8X8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power - Max: 71W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Base Part Number: SQJQ960
auf Bestellung 1691 Stücke
Lieferzeit 21-28 Tag (e)
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SUD19P06-60-BE3
SUD19P06-60-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18.3A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR846BDP-T1-RE3 sir846bdp.pdf
SIR846BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR846
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SIR846BDP-T1-RE3 sir846bdp.pdf
SIR846BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Base Part Number: SIR846
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SIE808DF-T1-E3 sie808df.pdf
SIE808DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10-POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE808
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIE808DF-T1-E3 sie808df.pdf
SIE808DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10-POLARPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE808
auf Bestellung 1038 Stücke
Lieferzeit 21-28 Tag (e)
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SUD50P04-08-BE3
SUD50P04-08-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A DPAK
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-09L_T4GE3 sqd50p04.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS02DN-T1-GE3 siss02dn.pdf
SISS02DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 51A/80A PPAK
Base Part Number: SISS02
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1314 Stücke - Preis und Lieferfrist anzeigen
SISS02DN-T1-GE3 siss02dn.pdf
SISS02DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 51A/80A PPAK
Vgs (Max): +16V, -12V
Base Part Number: SISS02
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1314 Stücke
Lieferzeit 21-28 Tag (e)
SQA470EEJ-T1_GE3 sqa470eej.pdf
SQA470EEJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.25A PPAK SC70
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQA470EEJ-T1_GE3 sqa470eej.pdf
SQA470EEJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.25A PPAK SC70
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 127 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.59 EUR
20+ 1.37 EUR
100+ 1.02 EUR
SQ2364EES-T1_GE3 sq2364ees.pdf
SQ2364EES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2364
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 36000 Stücke
Lieferzeit 21-28 Tag (e)
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SQ2364EES-T1_GE3 sq2364ees.pdf
SQ2364EES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2A SOT23-3
Base Part Number: SQ2364
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
auf Bestellung 39357 Stücke
Lieferzeit 21-28 Tag (e)
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SIS106DN-T1-GE3 sis106dn.pdf
SIS106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 60V POWERPAK 1212-
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIS106
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5523 Stücke - Preis und Lieferfrist anzeigen
SIS106DN-T1-GE3 sis106dn.pdf
SIS106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 60V POWERPAK 1212-
Base Part Number: SIS106
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SISS30LDN-T1-GE3 siss30ldn.pdf
SISS30LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Base Part Number: SISS30
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ456EP-T1_GE3 sqj456ep.pdf
SQJ456EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3342pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ456
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2722 Stücke - Preis und Lieferfrist anzeigen
SQJ456EP-T1_GE3 sqj456ep.pdf
SQJ456EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3342pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ456
auf Bestellung 2722 Stücke
Lieferzeit 21-28 Tag (e)
SQJ456EP-T2_GE3 SQJ456EP.pdf
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3342pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ456
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB422EDK-T4-GE3 sib422edk.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.1A/9A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±8V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6
Package / Case: PowerPAK® SC-75-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4058DY-T1-GE3 si4058dy.pdf
SI4058DY-T1-GE3
Hersteller: Vishay Siliconix
Description: Description: MOSFET N-CH 100V 10.3A 8SOIC
Base Part Number: SI4058
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Base Part Number: SI4058
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR110TRPBF-BE3
IRFR110TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM35N30-97_GE3 sqm35n30-97.pdf
SQM35N30-97_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 300V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 10A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH070N60EF-T1GE3 sihh070n60ef.pdf
SIHH070N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 36A PPAK 8 X 8
Base Part Number: SIHH070
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2647pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2303ES-T1_GE3 sq2303es.pdf
SQ2303ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V SOT23
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQ2303
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6596 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIC652CD-T1-GE3 sic652.pdf
SIC652CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 55A MLP31-55
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 55A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
SIC652CD-T1-GE3 sic652.pdf
SIC652CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 55A MLP31-55
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 55A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.33 EUR
25+ 5.99 EUR
IRLL014TRPBF-BE3
IRLL014TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 119 Stücke
Lieferzeit 21-28 Tag (e)
SQM100P10-19L_GE3 sqm100p10-19l.pdf
SQM100P10-19L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 93A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR404DP-T1-GE3 sir404dp.pdf
SIR404DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 4.5 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 70 Stücke - Preis und Lieferfrist anzeigen
SIR404DP-T1-GE3 sir404dp.pdf
SIR404DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
auf Bestellung 70 Stücke
Lieferzeit 21-28 Tag (e)
6+ 5.12 EUR
10+ 4.6 EUR
DG509BEN-T1-GE4 dg508b.pdf
DG509BEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: DG509
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2486 Stücke - Preis und Lieferfrist anzeigen
DG509BEN-T1-GE4 dg508b.pdf
DG509BEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG509
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
auf Bestellung 2486 Stücke
Lieferzeit 21-28 Tag (e)
DG4053EEY-T1-GE3 dg4051e.pdf
DG4053EEY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX TRIPLE 2CHAN 16-SOIC
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel-to-Channel Matching (ΔRon): 910mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -105dB @ 100kHz
Charge Injection: 0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 930MHz
On-State Resistance (Max): 78Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17634 Stücke - Preis und Lieferfrist anzeigen
2500+ 2.07 EUR
DG4053EEY-T1-GE3 dg4051e.pdf
DG4053EEY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX TRIPLE 2CHAN 16-SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel-to-Channel Matching (ΔRon): 910mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -105dB @ 100kHz
Charge Injection: 0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 930MHz
On-State Resistance (Max): 78Ohm
Operating Temperature: -40°C ~ 125°C (TA)
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Lieferzeit 21-28 Tag (e)
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7+ 3.93 EUR
10+ 3.53 EUR
25+ 3.33 EUR
100+ 2.83 EUR
250+ 2.66 EUR
500+ 2.33 EUR
1000+ 2.07 EUR
IRFR310TRPBF-BE3
IRFR310TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 180 Stücke - Preis und Lieferfrist anzeigen
IRFR310TRPBF-BE3
IRFR310TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 180 Stücke
Lieferzeit 21-28 Tag (e)
9+ 2.96 EUR
10+ 2.64 EUR
100+ 2.06 EUR
SQJ488EP-T1_GE3 sqj488ep.pdf
SQJ488EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 42A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC621CD-T1-GE3 sic621.pdf
SIC621CD-T1-GE3
Hersteller: Vishay Siliconix
Description: 60A VRPOWER(DRMOS)INTEGRATED POW
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 60A
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14438 Stücke - Preis und Lieferfrist anzeigen
3000+ 6.12 EUR
SIC621CD-T1-GE3 sic621.pdf
SIC621CD-T1-GE3
Hersteller: Vishay Siliconix
Description: 60A VRPOWER(DRMOS)INTEGRATED POW
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 60A
auf Bestellung 14438 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
3+ 10.43 EUR
10+ 9.36 EUR
25+ 8.85 EUR
100+ 7.67 EUR
250+ 7.27 EUR
500+ 6.53 EUR
1000+ 6.12 EUR
SIRA58ADP-T1-RE3 sira58adp.pdf
SIRA58ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA58
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Lieferzeit 21-28 Tag (e)
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SIRA58ADP-T1-RE3 sira58adp.pdf
SIRA58ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32.3A/109A PPAK
Base Part Number: SIRA58
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SIRA50ADP-T1-RE3 sira50adp.pdf
SIRA50ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA50
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Lieferzeit 21-28 Tag (e)
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SIRA50ADP-T1-RE3 sira50adp.pdf
SIRA50ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA50
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Lieferzeit 21-28 Tag (e)
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SIRA14BDP-T1-GE3 sira14bdp.pdf
SIRA14BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 21A/64A PPAK SO8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 917pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1565 Stücke - Preis und Lieferfrist anzeigen
SIRA14BDP-T1-GE3 sira14bdp.pdf
SIRA14BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 21A/64A PPAK SO8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 917pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1565 Stücke
Lieferzeit 21-28 Tag (e)
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