Die Produkte vishay siliconix

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SQ4937EY-T1_GE3 SQ4937EY-T1_GE3 sq4937ey.pdf Vishay Siliconix Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4937
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4937
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 1963 Stücke
Lieferzeit 21-28 Tag (e)
SI1403BDL-T1-BE3 SI1403BDL-T1-BE3 si1403bdl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.4A SC70-6
Base Part Number: SI1403
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 568mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2954 Stücke
Lieferzeit 21-28 Tag (e)
SI1442DH-T1-BE3 SI1442DH-T1-BE3 si1442dh.pdf Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Vishay Siliconix
Base Part Number: SI1442
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Vishay Siliconix
Base Part Number: SI1442
auf Bestellung 2803 Stücke
Lieferzeit 21-28 Tag (e)
SQJA72EP-T1_GE3 SQJA72EP-T1_GE3 sqja72ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V 37A PPAK SO-8
Base Part Number: SQJA72
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 37A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA72
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
auf Bestellung 367 Stücke
Lieferzeit 21-28 Tag (e)
SQJ150EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 66A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1274pF @ 25V
Vgs (Max): ±20V
auf Bestellung 3048 Stücke
Lieferzeit 21-28 Tag (e)
SQJ912DEP-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIR882BDP-T1-RE3 SIR882BDP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Base Part Number: SIR882
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3762pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5877 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQJQ142E-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ142
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4401EY-T1_BE3 SQ4401EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Power Dissipation (Max): 7.14W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Power Dissipation (Max): 7.14W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4401
auf Bestellung 2009 Stücke
Lieferzeit 21-28 Tag (e)
SIHP6N80AE-GE3 SIHP6N80AE-GE3 sihp6n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 982 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.37 EUR
10+ 3.92 EUR
100+ 3.05 EUR
500+ 2.52 EUR
SIHP068N60EF-GE3 SIHP068N60EF-GE3 sihp068n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 41A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.22 EUR
10+ 12.76 EUR
SIHG068N60EF-GE3 SIHG068N60EF-GE3 sihg068n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 41A TO247AC
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2628pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Base Part Number: SiHG068
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 530 Stücke
Lieferzeit 21-28 Tag (e)
SIDR668ADP-T1-RE3 SIDR668ADP-T1-RE3 sidr668adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 23.3A/104A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR688DP-T1-GE3 SIR688DP-T1-GE3 sir688dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3105pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T2-E1 SI8416DB-T2-E1 si8416db.pdf Vishay Siliconix Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ998BDT-T1-GE3 Vishay Siliconix Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ998
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Base Part Number: SIZ998
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 9035 Stücke
Lieferzeit 21-28 Tag (e)
SIR624DP-T1-GE3 SIR624DP-T1-GE3 sir624dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR624
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 18000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR624
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
auf Bestellung 18437 Stücke
Lieferzeit 21-28 Tag (e)
SUD50P04-08-E3 Vishay Siliconix Description: MOSFET P-CH 40V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z10PBF-BE3 IRF9Z10PBF-BE3 90118.pdf Vishay Siliconix Description: MOSFET P-CH 60V 6.7A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: P-Channel
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 963 Stücke
Lieferzeit 21-28 Tag (e)
SQP120N06-6M7_GE3 SQP120N06-6M7_GE3 Vishay Siliconix Description: MOSFET N-CH 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Supplier Device Package: TO-220AB
Part Status: Last Time Buy
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
SQV120N06-4M7L_GE3 SQV120N06-4M7L_GE3 sqv120n06-4m7l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 120A TO262-3
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: SQV120
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510PBF-BE3 sihl510.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
auf Bestellung 701 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.54 EUR
10+ 3.16 EUR
100+ 2.46 EUR
500+ 2.03 EUR
IRL530PBF-BE3 sihl530.pdf Vishay Siliconix Description: MOSFET N-CH 100V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
auf Bestellung 305 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.42 EUR
10+ 3.95 EUR
100+ 3.08 EUR
SQ4917EY-T1_BE3 SQ4917EY-T1_BE3 Vishay Siliconix Description: MOSFET 2 P-CHANNEL 60V 8A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SQ4917
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM50020E-GE3 SUM50020E-GE3 sum50020e.pdf Vishay Siliconix Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11150pF @ 30V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 57 Stücke
Lieferzeit 21-28 Tag (e)
SUM50P10-42-E3 SUM50P10-42-E3 SUM50P10-42.pdf Vishay Siliconix Description: MOSFET N-CH 100V 36A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Power Dissipation (Max): 18.8W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR110TRLPBF-BE3 IRFR110TRLPBF-BE3 sihfr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Part Status: Active
Vgs (Max): ±20V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD08P06-155L-BE3 SUD08P06-155L-BE3 Vishay Siliconix Description: MOSFET P-CH 60V 8.2A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SUD08
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 60V 8.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SUD08
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
auf Bestellung 1122 Stücke
Lieferzeit 21-28 Tag (e)
SIA477EDJ-T1-GE3 SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf Vishay Siliconix Description: MOSFET P-CH 12V 12A PPAK SC70-6
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIA477
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 12V 12A PPAK SC70-6
Base Part Number: SIA477
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1789 Stücke
Lieferzeit 21-28 Tag (e)
SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 sihp17n80aef.pdf Vishay Siliconix Description: E SERIES POWER MOSFET WITH FAST
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 sihg17n80aef.pdf Vishay Siliconix Description: E SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA78EP-T1_GE3 SQJA78EP-T1_GE3 sqja78ep.pdf Vishay Siliconix Description: MOSFET N-CH 80V 72A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA78
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 80V 72A PPAK SO-8
Base Part Number: SQJA78
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2882 Stücke
Lieferzeit 21-28 Tag (e)
SQ1922EEH-T1_GE3 SQ1922EEH-T1_GE3 sq1922eeh.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
auf Bestellung 8560 Stücke
Lieferzeit 21-28 Tag (e)
SQ1470AEH-T1_GE3 SQ1470AEH-T1_GE3 sq1470aeh.pdf Vishay Siliconix Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 864 Stücke
Lieferzeit 21-28 Tag (e)
18+ 1.51 EUR
21+ 1.29 EUR
100+ 0.96 EUR
500+ 0.76 EUR
SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 sqs481enw.pdf Vishay Siliconix Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 75V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SQS481
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 75V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SQS481
auf Bestellung 4106 Stücke
Lieferzeit 21-28 Tag (e)
SIA938DJT-T1-GE3 SIA938DJT-T1-GE3 sia938djt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
Manufacturer: Vishay Siliconix
Base Part Number: SIA938
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3273 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR690DP-T1-GE3 SIR690DP-T1-GE3 sir690dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 7.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR690
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 7.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR690
auf Bestellung 4272 Stücke
Lieferzeit 21-28 Tag (e)
DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 dg9232e.pdf Vishay Siliconix Description: IC SWITCH SPST DUAL 8SOIC
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH SPST DUAL 8SOIC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
auf Bestellung 2389 Stücke
Lieferzeit 21-28 Tag (e)
SISF06DN-T1-GE3 Vishay Siliconix Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Base Part Number: SISF06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Base Part Number: SISF06
auf Bestellung 1959 Stücke
Lieferzeit 21-28 Tag (e)
SIDR680ADP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2723DN-T1-GE4 dg2723.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 10-MINIQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ147ELP-T1_GE3 SQJ147ELP-T1_GE3 sqj147elp.pdf Vishay Siliconix Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Power Dissipation (Max): 183W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7469ADP-T1-RE3 SI7469ADP-T1-RE3 si7469adp.pdf Vishay Siliconix Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR681DP-T1-RE3 SIR681DP-T1-RE3 sir681dp.pdf Vishay Siliconix Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90N04-3M3P-E3 SUM90N04-3M3P-E3 sum90n043m3p.pdf Vishay Siliconix Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ174EP-T1_GE3 SQJ174EP-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 sis932edn.pdf Vishay Siliconix Description: MOSFET N-CH DL 30V PWRPAK 1212-8
Base Part Number: SIS932
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.6W (Ta), 23W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH DL 30V PWRPAK 1212-8
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS932
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.6W (Ta), 23W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 sqja34ep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA34
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA34
auf Bestellung 970 Stücke
Lieferzeit 21-28 Tag (e)
SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2669 Stücke
Lieferzeit 21-28 Tag (e)
SQJ136ELP-T1_GE3 SQJ136ELP-T1_GE3 sqj136elp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 350A PPAK SO-8
Base Part Number: SQJ136
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2798 Stücke - Preis und Lieferfrist anzeigen
SIZ256DT-T1-GE3 SIZ256DT-T1-GE3 siz256dt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ256
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIRA20BDP-T1-GE3 SIRA20BDP-T1-GE3 sira20bdp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ136ELP-T1_GE3 SQJ136ELP-T1_GE3 sqj136elp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 350A PPAK SO-8
Base Part Number: SQJ136
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2798 Stücke
Lieferzeit 21-28 Tag (e)
SUM70030M-GE3 SUM70030M-GE3 sum70030m.pdf Vishay Siliconix Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10870pF @ 50V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 siz340bdt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 267 Stücke
Lieferzeit 21-28 Tag (e)
SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 si7252adp.pdf Vishay Siliconix Description: DUAL N-CHANNEL 100-V (D-S) MOSFE
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Power - Max: 3.6W (Ta), 33.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB60EP-T2_GE3 sqjb60ep.pdf Vishay Siliconix Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SQJB60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ910AEP-T2_GE3 sqj910aep.pdf Vishay Siliconix Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SQJ910
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQR100N04-3M8R_GE3 Vishay Siliconix Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: SQR100N
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQC40016E_DFFR Vishay Siliconix Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Bulk
Part Status: Active
Base Part Number: SQC40016
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7190ADP-T1-RE3 SI7190ADP-T1-RE3 si7190adp.pdf Vishay Siliconix Description: MOSFET N-CH 250V 4.3A/14.4A PPAK
Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
auf Bestellung 2410 Stücke
Lieferzeit 21-28 Tag (e)
SIR106DP-T1-RE3 SIR106DP-T1-RE3 sir106dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 50V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 50V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 2257 Stücke
Lieferzeit 21-28 Tag (e)
SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 sir640adp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 41.6A/100A PPAK
Base Part Number: SIR640
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 1273 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 41.6A/100A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR640
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
auf Bestellung 1273 Stücke
Lieferzeit 21-28 Tag (e)
SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix Description: MOSFET N-CH 150V 15A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 150V 15A DPAK
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
auf Bestellung 1953 Stücke
Lieferzeit 21-28 Tag (e)
SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 12A/35A DPAK
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR882BDP-T1-RE3 SIR882BDP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3762pF @ 50V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5877 Stücke - Preis und Lieferfrist anzeigen
SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 si7322adn.pdf Vishay Siliconix Description: MOSFET N-CH 100V 15.1A PPAK
Base Part Number: SI7322
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 26W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 15.1A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 26W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Base Part Number: SI7322
Package / Case: PowerPAK® 1212-8
auf Bestellung 1241 Stücke
Lieferzeit 21-28 Tag (e)
SISA72DN-T1-GE3 SISA72DN-T1-GE3 sisa72dn.pdf Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 20V
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA72
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 20V
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA72
auf Bestellung 5424 Stücke
Lieferzeit 21-28 Tag (e)
SQ4937EY-T1_GE3 sq4937ey.pdf
SQ4937EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4937
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1963 Stücke - Preis und Lieferfrist anzeigen
SQ4937EY-T1_GE3 sq4937ey.pdf
SQ4937EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4937
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 1963 Stücke
Lieferzeit 21-28 Tag (e)
SI1403BDL-T1-BE3 si1403bdl.pdf
SI1403BDL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Base Part Number: SI1403
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 568mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2954 Stücke
Lieferzeit 21-28 Tag (e)
SI1442DH-T1-BE3 si1442dh.pdf
SI1442DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Vishay Siliconix
Base Part Number: SI1442
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2803 Stücke - Preis und Lieferfrist anzeigen
SI1442DH-T1-BE3 si1442dh.pdf
SI1442DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Vishay Siliconix
Base Part Number: SI1442
auf Bestellung 2803 Stücke
Lieferzeit 21-28 Tag (e)
SQJA72EP-T1_GE3 sqja72ep.pdf
SQJA72EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
Base Part Number: SQJA72
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 367 Stücke - Preis und Lieferfrist anzeigen
SQJA72EP-T1_GE3 sqja72ep.pdf
SQJA72EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA72
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
auf Bestellung 367 Stücke
Lieferzeit 21-28 Tag (e)
SQJ150EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 66A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1274pF @ 25V
Vgs (Max): ±20V
auf Bestellung 3048 Stücke
Lieferzeit 21-28 Tag (e)
SQJ912DEP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIR882BDP-T1-RE3
SIR882BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Base Part Number: SIR882
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3762pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5877 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQJQ142E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ142
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4401EY-T1_BE3
SQ4401EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Power Dissipation (Max): 7.14W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2009 Stücke - Preis und Lieferfrist anzeigen
SQ4401EY-T1_BE3
SQ4401EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Power Dissipation (Max): 7.14W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4401
auf Bestellung 2009 Stücke
Lieferzeit 21-28 Tag (e)
SIHP6N80AE-GE3 sihp6n80ae.pdf
SIHP6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 982 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.37 EUR
10+ 3.92 EUR
100+ 3.05 EUR
500+ 2.52 EUR
SIHP068N60EF-GE3 sihp068n60ef.pdf
SIHP068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.22 EUR
10+ 12.76 EUR
SIHG068N60EF-GE3 sihg068n60ef.pdf
SIHG068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A TO247AC
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2628pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Base Part Number: SiHG068
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 530 Stücke
Lieferzeit 21-28 Tag (e)
SIDR668ADP-T1-RE3 sidr668adp.pdf
SIDR668ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.3A/104A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR688DP-T1-GE3 sir688dp.pdf
SIR688DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3105pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T2-E1 si8416db.pdf
SI8416DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ998BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ998
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9035 Stücke - Preis und Lieferfrist anzeigen
SIZ998BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Base Part Number: SIZ998
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 9035 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
SIR624DP-T1-GE3 sir624dp.pdf
SIR624DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR624
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 18000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18437 Stücke - Preis und Lieferfrist anzeigen
SIR624DP-T1-GE3 sir624dp.pdf
SIR624DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR624
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
auf Bestellung 18437 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
SUD50P04-08-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z10PBF-BE3 90118.pdf
IRF9Z10PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 6.7A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: P-Channel
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 963 Stücke
Lieferzeit 21-28 Tag (e)
SQP120N06-6M7_GE3
SQP120N06-6M7_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Supplier Device Package: TO-220AB
Part Status: Last Time Buy
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
SQV120N06-4M7L_GE3 sqv120n06-4m7l.pdf
SQV120N06-4M7L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO262-3
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: SQV120
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510PBF-BE3 sihl510.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
auf Bestellung 701 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.54 EUR
10+ 3.16 EUR
100+ 2.46 EUR
500+ 2.03 EUR
IRL530PBF-BE3 sihl530.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
auf Bestellung 305 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.42 EUR
10+ 3.95 EUR
100+ 3.08 EUR
SQ4917EY-T1_BE3
SQ4917EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CHANNEL 60V 8A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SQ4917
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM50020E-GE3 sum50020e.pdf
SUM50020E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11150pF @ 30V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 57 Stücke
Lieferzeit 21-28 Tag (e)
SUM50P10-42-E3 SUM50P10-42.pdf
SUM50P10-42-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Power Dissipation (Max): 18.8W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR110TRLPBF-BE3 sihfr110.pdf
IRFR110TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Part Status: Active
Vgs (Max): ±20V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD08P06-155L-BE3
SUD08P06-155L-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.2A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SUD08
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1122 Stücke - Preis und Lieferfrist anzeigen
SUD08P06-155L-BE3
SUD08P06-155L-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SUD08
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
auf Bestellung 1122 Stücke
Lieferzeit 21-28 Tag (e)
SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf
SIA477EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIA477
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1789 Stücke - Preis und Lieferfrist anzeigen
SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf
SIA477EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Base Part Number: SIA477
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1789 Stücke
Lieferzeit 21-28 Tag (e)
SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA78EP-T1_GE3 sqja78ep.pdf
SQJA78EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 72A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA78
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2882 Stücke - Preis und Lieferfrist anzeigen
SQJA78EP-T1_GE3 sqja78ep.pdf
SQJA78EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 72A PPAK SO-8
Base Part Number: SQJA78
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2882 Stücke
Lieferzeit 21-28 Tag (e)
SQ1922EEH-T1_GE3 sq1922eeh.pdf
SQ1922EEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8560 Stücke - Preis und Lieferfrist anzeigen
SQ1922EEH-T1_GE3 sq1922eeh.pdf
SQ1922EEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
auf Bestellung 8560 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SQ1470AEH-T1_GE3 sq1470aeh.pdf
SQ1470AEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 864 Stücke - Preis und Lieferfrist anzeigen
SQ1470AEH-T1_GE3 sq1470aeh.pdf
SQ1470AEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 864 Stücke
Lieferzeit 21-28 Tag (e)
18+ 1.51 EUR
21+ 1.29 EUR
100+ 0.96 EUR
500+ 0.76 EUR
SQS481ENW-T1_GE3 sqs481enw.pdf
SQS481ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 75V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SQS481
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4106 Stücke - Preis und Lieferfrist anzeigen
SQS481ENW-T1_GE3 sqs481enw.pdf
SQS481ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 75V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SQS481
auf Bestellung 4106 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIA938DJT-T1-GE3 sia938djt.pdf
SIA938DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
Manufacturer: Vishay Siliconix
Base Part Number: SIA938
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3273 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR690DP-T1-GE3 sir690dp.pdf
SIR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 7.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR690
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4272 Stücke - Preis und Lieferfrist anzeigen
SIR690DP-T1-GE3 sir690dp.pdf
SIR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 7.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR690
auf Bestellung 4272 Stücke
Lieferzeit 21-28 Tag (e)
DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2389 Stücke - Preis und Lieferfrist anzeigen
DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
auf Bestellung 2389 Stücke
Lieferzeit 21-28 Tag (e)
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Base Part Number: SISF06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1959 Stücke - Preis und Lieferfrist anzeigen
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Base Part Number: SISF06
auf Bestellung 1959 Stücke
Lieferzeit 21-28 Tag (e)
SIDR680ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2723DN-T1-GE4 dg2723.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10-MINIQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ147ELP-T1_GE3 sqj147elp.pdf
SQJ147ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Power Dissipation (Max): 183W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7469ADP-T1-RE3 si7469adp.pdf
SI7469ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR681DP-T1-RE3 sir681dp.pdf
SIR681DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90N04-3M3P-E3 sum90n043m3p.pdf
SUM90N04-3M3P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ174EP-T1_GE3
SQJ174EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DL 30V PWRPAK 1212-8
Base Part Number: SIS932
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.6W (Ta), 23W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DL 30V PWRPAK 1212-8
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS932
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.6W (Ta), 23W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA34
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 970 Stücke - Preis und Lieferfrist anzeigen
SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA34
auf Bestellung 970 Stücke
Lieferzeit 21-28 Tag (e)
SI2319CDS-T1-BE3
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2669 Stücke - Preis und Lieferfrist anzeigen
SI2319CDS-T1-BE3
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2669 Stücke
Lieferzeit 21-28 Tag (e)
SQJ136ELP-T1_GE3 sqj136elp.pdf
SQJ136ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Base Part Number: SQJ136
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2798 Stücke - Preis und Lieferfrist anzeigen
SIZ256DT-T1-GE3 siz256dt.pdf
SIZ256DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ256
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIRA20BDP-T1-GE3 sira20bdp.pdf
SIRA20BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ136ELP-T1_GE3 sqj136elp.pdf
SQJ136ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Base Part Number: SQJ136
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2798 Stücke
Lieferzeit 21-28 Tag (e)
SUM70030M-GE3 sum70030m.pdf
SUM70030M-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10870pF @ 50V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 267 Stücke - Preis und Lieferfrist anzeigen
SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) MOSFE
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Power - Max: 3.6W (Ta), 33.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB60EP-T2_GE3 sqjb60ep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SQJB60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ910AEP-T2_GE3 sqj910aep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SQJ910
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQR100N04-3M8R_GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: SQR100N
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQC40016E_DFFR
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Bulk
Part Status: Active
Base Part Number: SQC40016
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7190ADP-T1-RE3 si7190adp.pdf
SI7190ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 4.3A/14.4A PPAK
Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
auf Bestellung 2410 Stücke
Lieferzeit 21-28 Tag (e)
SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 50V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 50V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 2257 Stücke
Lieferzeit 21-28 Tag (e)
SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Base Part Number: SIR640
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 1273 Stücke
Lieferzeit 21-28 Tag (e)
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SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR640
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
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Lieferzeit 21-28 Tag (e)
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SUD15N15-95-BE3
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1953 Stücke - Preis und Lieferfrist anzeigen
SUD15N15-95-BE3
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
auf Bestellung 1953 Stücke
Lieferzeit 21-28 Tag (e)
SUD35N10-26P-BE3
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR882BDP-T1-RE3
SIR882BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3762pF @ 50V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
Base Part Number: SI7322
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 26W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 26W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Base Part Number: SI7322
Package / Case: PowerPAK® 1212-8
auf Bestellung 1241 Stücke
Lieferzeit 21-28 Tag (e)
SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 20V
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA72
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Lieferzeit 21-28 Tag (e)
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SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 20V
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA72
auf Bestellung 5424 Stücke
Lieferzeit 21-28 Tag (e)
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