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SJM304BCC01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM304BIA01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM304BIC01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM306BCA01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM306BCC01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM307BCA01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM307BCC01 Vishay Siliconix Description: IC ANALOG SWITCH
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SQ2348ES-T1_GE3 SQ2348ES-T1_GE3 Vishay Siliconix sq2348es.pdf Description: MOSFET N-CH 30V 8A TO236
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
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SQ3410EV-T1_GE3 SQ3410EV-T1_GE3 Vishay Siliconix sq3410ev.pdf Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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SQ3469EV-T1-GE3 Vishay Siliconix sq3469ev.pdf Description: MOSFET P-CH 20V 8A TSOP-6
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SQ4401EY-T1-GE3 SQ4401EY-T1-GE3 Vishay Siliconix sq4401ey.pdf Description: MOSFET P-CH 40V 17.3A 8SOIC
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SQ4920EY-T1-GE3 SQ4920EY-T1-GE3 Vishay Siliconix sq4920ey.pdf Description: MOSFET 2N-CH 30V 8A 8SO
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SQ4946AEY-T1-GE3 SQ4946AEY-T1-GE3 Vishay Siliconix sq4946aey.pdf Description: MOSFET 2N-CH 60V 7A 8SOIC
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SQ9945BEY-T1-GE3 SQ9945BEY-T1-GE3 Vishay Siliconix sq9945bey.pdf Description: MOSFET 2N-CH 60V 5.4A 8SOIC
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SQA410EJ-T1_GE3 SQA410EJ-T1_GE3 Vishay Siliconix sqa410ej.pdf Description: MOSFET N-CH 20V 7.8A SC70-6
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SQD40N06-14L-GE3 SQD40N06-14L-GE3 Vishay Siliconix sqd40n06-14l.pdf Description: MOSFET N-CH 60V 40A TO-252
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SQD50N03-3M1L-GE3 Vishay Siliconix sqd50n03-3m1l.pdf Description: MOSFET N-CH D-S 30V 50A TO252
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SQD50N05-11L_GE3 SQD50N05-11L_GE3 Vishay Siliconix sqd50n05-11l.pdf Description: MOSFET N-CH 50V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 Vishay Siliconix sqj422ep.pdf Description: MOSFET N-CH 40V 74A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SQJ460EP-T1-GE3 Vishay Siliconix sqj460ep.pdf Description: MOSFET N-CH 60V 32A SO-8
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SQJ848AEP-T1-GE3 Vishay Siliconix SQJ848AEP-TI-GE3.pdf Description: MOSFET N-CH D-S 40V PPAK 8SOIC
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SQJ858AEP-T1-GE3 SQJ858AEP-T1-GE3 Vishay Siliconix sqj858aep.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
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SQJ886EP-T1_GE3 SQJ886EP-T1_GE3 Vishay Siliconix sqj886ep.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
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SQJ912EP-T1-GE3 Vishay Siliconix sqj912ep-111130.pdf Description: MOSFET 2N-CH 40V 8A 8-SO
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SQJ940EP-T1_GE3 SQJ940EP-T1_GE3 Vishay Siliconix sqj940ep.pdf Description: MOSFET 2N-CH 40V 15A PPAK SO-8
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SQJ960EP-T1-GE3 SQJ960EP-T1-GE3 Vishay Siliconix sqj960ep.pdf Description: MOSFET 2N-CH 60V 8A 8SO
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SQJ962EP-T1-GE3 Vishay Siliconix sqj962ep.pdf Description: MOSFET 2N-CH 60V 8A 8SO
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SQM100N04-3M5-GE3 Vishay Siliconix sqm100n0.pdf Description: MOSFET N-CH 40V 100A TO-263
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SQM120N03-1m5L_GE3 SQM120N03-1m5L_GE3 Vishay Siliconix sqm120n031m5l.pdf Description: MOSFET N-CH 30V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SQM120N04-1M8-GE3 Vishay Siliconix sqm120n04-1m8.pdf Description: MOSFET N-CH 40V 120A TO263
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SQM120N04-1m9_GE3 SQM120N04-1m9_GE3 Vishay Siliconix sqm120n04-1m9.pdf Description: MOSFET N-CH 40V 120A TO263
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SQM120N06-3m5L_GE3 SQM120N06-3m5L_GE3 Vishay Siliconix sqm120n06-3m5l.pdf Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQM200N04-1m1L_GE3 SQM200N04-1m1L_GE3 Vishay Siliconix sqm200n041m1l.pdf Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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SQM200N04-1m7L_GE3 SQM200N04-1m7L_GE3 Vishay Siliconix sqm200n04-1m7l.pdf Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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SQM50N04-4m1_GE3 SQM50N04-4m1_GE3 Vishay Siliconix sqm50n044m1.pdf Description: MOSFET N-CH 40V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SQS420EN-T1_GE3 SQS420EN-T1_GE3 Vishay Siliconix sqs420en.pdf Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
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SQS460EN-T1-GE3 SQS460EN-T1-GE3 Vishay Siliconix sqs460en.pdf Description: MOSFET N-CH 60V 8A 1212-8
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SQS462EN-T1_GE3 SQS462EN-T1_GE3 Vishay Siliconix sqs462en.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQS482EN-T1_GE3 SQS482EN-T1_GE3 Vishay Siliconix sqs482en.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQS484EN-T1_GE3 SQS484EN-T1_GE3 Vishay Siliconix sqs484en.pdf Description: MOSFET N-CH 40V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
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3000+0.89 EUR
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SST174-E3 SST174-E3 Vishay Siliconix J;SST174,175,176,177%20Series.pdf Description: JFET P-CH 30V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-236
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Produkt ist nicht verfügbar
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SST174-T1-E3 SST174-T1-E3 Vishay Siliconix J;SST174,175,176,177%20Series.pdf Description: JFET P-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Resistance - RDS(On): 85 Ohms
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST201-T1-E3 SST201-T1-E3 Vishay Siliconix J%3BSST201%20Series.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST204-E3 SST204-E3 Vishay Siliconix J;SST201%20Series.pdf Description: JFET N-CH 25V .7MA SOT-23
Produkt ist nicht verfügbar
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SST204-T1-E3 SST204-T1-E3 Vishay Siliconix J;SST201 Series.pdf Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST4118-T1-E3 SST4118-T1-E3 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST4119-T1-E3 SST4119-T1-E3 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO236
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 350 mW
Supplier Device Package: TO-236
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST4416-E3 SST4416-E3 Vishay Siliconix 2N4416%2C2N4416A.SST4416.pdf Description: JFET N-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SST5461-T1-E3 SST5461-T1-E3 Vishay Siliconix 2N;SST5460 Series.pdf Description: JFET P-CH 40V SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SST5462-T1-E3 SST5462-T1-E3 Vishay Siliconix 2N;SST5460 Series.pdf Description: JFET P-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST5484-E3 SST5484-E3 Vishay Siliconix 2N%3BSST5484%20Series.pdf description Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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SST5484-T1-E3 SST5484-T1-E3 Vishay Siliconix 2N%3BSST5484%20Series.pdf Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SST5485-E3 SST5485-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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SST5485-T1-E3 SST5485-T1-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SST5486-E3 SST5486-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Produkt ist nicht verfügbar
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SST5486-T1-E3 SST5486-T1-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Produkt ist nicht verfügbar
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SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix to252aa.pdf Description: MOSFET N-CH 100V 6.5A TO252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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SUD50N025-09BP-E3 Vishay Siliconix 73477.pdf Description: MOSFET N-CH D-S 25V TO252
Produkt ist nicht verfügbar
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SUD50N03-06AP-T4E3 SUD50N03-06AP-T4E3 Vishay Siliconix 73540.pdf Description: MOSFET N-CH 30V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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SUP53P06-20-GE3 SUP53P06-20-GE3 Vishay Siliconix sup53p06-20.pdf Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
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SJM304BCC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM304BIA01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM304BIC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM306BCA01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM306BCC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM307BCA01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM307BCC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SQ2348ES-T1_GE3 sq2348es.pdf
SQ2348ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A TO236
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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SQ3410EV-T1_GE3 sq3410ev.pdf
SQ3410EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.56 EUR
6000+0.52 EUR
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SQ3469EV-T1-GE3 sq3469ev.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A TSOP-6
Produkt ist nicht verfügbar
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SQ4401EY-T1-GE3 sq4401ey.pdf
SQ4401EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Produkt ist nicht verfügbar
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SQ4920EY-T1-GE3 sq4920ey.pdf
SQ4920EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Produkt ist nicht verfügbar
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SQ4946AEY-T1-GE3 sq4946aey.pdf
SQ4946AEY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC
Produkt ist nicht verfügbar
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SQ9945BEY-T1-GE3 sq9945bey.pdf
SQ9945BEY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Produkt ist nicht verfügbar
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SQA410EJ-T1_GE3 sqa410ej.pdf
SQA410EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.8A SC70-6
Produkt ist nicht verfügbar
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SQD40N06-14L-GE3 sqd40n06-14l.pdf
SQD40N06-14L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 40A TO-252
Produkt ist nicht verfügbar
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SQD50N03-3M1L-GE3 sqd50n03-3m1l.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
Produkt ist nicht verfügbar
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SQD50N05-11L_GE3 sqd50n05-11l.pdf
SQD50N05-11L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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SQJ422EP-T1_GE3 sqj422ep.pdf
SQJ422EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 74A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.39 EUR
6000+1.37 EUR
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SQJ460EP-T1-GE3 sqj460ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A SO-8
Produkt ist nicht verfügbar
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SQJ848AEP-T1-GE3 SQJ848AEP-TI-GE3.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V PPAK 8SOIC
Produkt ist nicht verfügbar
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SQJ858AEP-T1-GE3 sqj858aep.pdf
SQJ858AEP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Produkt ist nicht verfügbar
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SQJ886EP-T1_GE3 sqj886ep.pdf
SQJ886EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ912EP-T1-GE3 sqj912ep-111130.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8-SO
Produkt ist nicht verfügbar
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SQJ940EP-T1_GE3 sqj940ep.pdf
SQJ940EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
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SQJ960EP-T1-GE3 sqj960ep.pdf
SQJ960EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Produkt ist nicht verfügbar
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SQJ962EP-T1-GE3 sqj962ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Produkt ist nicht verfügbar
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SQM100N04-3M5-GE3 sqm100n0.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO-263
Produkt ist nicht verfügbar
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SQM120N03-1m5L_GE3 sqm120n031m5l.pdf
SQM120N03-1m5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SQM120N04-1M8-GE3 sqm120n04-1m8.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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SQM120N04-1m9_GE3 sqm120n04-1m9.pdf
SQM120N04-1m9_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQM120N06-3m5L_GE3 sqm120n06-3m5l.pdf
SQM120N06-3m5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQM200N04-1m1L_GE3 sqm200n041m1l.pdf
SQM200N04-1m1L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Produkt ist nicht verfügbar
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SQM200N04-1m7L_GE3 sqm200n04-1m7l.pdf
SQM200N04-1m7L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Produkt ist nicht verfügbar
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SQM50N04-4m1_GE3 sqm50n044m1.pdf
SQM50N04-4m1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQS420EN-T1_GE3 sqs420en.pdf
SQS420EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.79 EUR
6000+0.73 EUR
9000+0.7 EUR
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SQS460EN-T1-GE3 sqs460en.pdf
SQS460EN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 1212-8
Produkt ist nicht verfügbar
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SQS462EN-T1_GE3 sqs462en.pdf
SQS462EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.8 EUR
6000+0.74 EUR
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SQS482EN-T1_GE3 sqs482en.pdf
SQS482EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQS484EN-T1_GE3 sqs484en.pdf
SQS484EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.89 EUR
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SST174-E3 J;SST174,175,176,177%20Series.pdf
SST174-E3
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-236
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Produkt ist nicht verfügbar
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SST174-T1-E3 J;SST174,175,176,177%20Series.pdf
SST174-T1-E3
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Resistance - RDS(On): 85 Ohms
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST201-T1-E3 J%3BSST201%20Series.pdf
SST201-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST204-E3 J;SST201%20Series.pdf
SST204-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
Produkt ist nicht verfügbar
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SST204-T1-E3 J;SST201 Series.pdf
SST204-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST4118-T1-E3 2N,PN,SST4117A Series.pdf
SST4118-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST4119-T1-E3 2N,PN,SST4117A Series.pdf
SST4119-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 40V TO236
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Power - Max: 350 mW
Supplier Device Package: TO-236
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST4416-E3 2N4416%2C2N4416A.SST4416.pdf
SST4416-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SST5461-T1-E3 2N;SST5460 Series.pdf
SST5461-T1-E3
Hersteller: Vishay Siliconix
Description: JFET P-CH 40V SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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SST5462-T1-E3 2N;SST5460 Series.pdf
SST5462-T1-E3
Hersteller: Vishay Siliconix
Description: JFET P-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST5484-E3 description 2N%3BSST5484%20Series.pdf
SST5484-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST5484-T1-E3 2N%3BSST5484%20Series.pdf
SST5484-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST5485-E3 2N;SST5484 Series.pdf
SST5485-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST5485-T1-E3 2N;SST5484 Series.pdf
SST5485-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SST5486-E3 2N;SST5484 Series.pdf
SST5486-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Produkt ist nicht verfügbar
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SST5486-T1-E3 2N;SST5484 Series.pdf
SST5486-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Power - Max: 350 mW
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Produkt ist nicht verfügbar
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SUD06N10-225L-GE3 to252aa.pdf
SUD06N10-225L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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SUD50N025-09BP-E3 73477.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 25V TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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SUD50N03-06AP-T4E3 73540.pdf
SUD50N03-06AP-T4E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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SUP53P06-20-GE3 sup53p06-20.pdf
SUP53P06-20-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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