Die Produkte vishay siliconix

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IRFL210TRPBF-BE3 IRFL210TRPBF-BE3 sihfl210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 0.96A SOT223
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1665 Stücke - Preis und Lieferfrist anzeigen
IRFR024TRPBF-BE3 IRFR024TRPBF-BE3 sihfr024.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBC40PBF-BE3 IRFBC40PBF-BE3 91115.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1033 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.29 EUR
10+ 5.66 EUR
100+ 4.55 EUR
500+ 3.74 EUR
1000+ 3.21 EUR
IRFBC40APBF-BE3 IRFBC40APBF-BE3 sihfbc40.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.53 EUR
10+ 5.86 EUR
100+ 4.71 EUR
500+ 3.87 EUR
IRFBC40LCPBF-BE3 IRFBC40LCPBF-BE3 sihfbc40lc.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A TO220AB
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 848 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.52 EUR
10+ 10.34 EUR
100+ 8.47 EUR
500+ 7.21 EUR
IRFBE30PBF-BE3 IRFBE30PBF-BE3 91118.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.1A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.8 EUR
10+ 5.23 EUR
100+ 4.2 EUR
500+ 3.45 EUR
1000+ 2.96 EUR
SISS32ADN-T1-GE3 SISS32ADN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 80V 17.4A/63A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF620PBF-BE3 IRF620PBF-BE3 sihf620.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 471 Stücke
Lieferzeit 21-28 Tag (e)
9+ 2.91 EUR
11+ 2.6 EUR
100+ 2.02 EUR
SQ1431EH-T1_GE3 SQ1431EH-T1_GE3 sq1431eh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ1431
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70-6
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ1431
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
auf Bestellung 5300 Stücke
Lieferzeit 21-28 Tag (e)
SIR622DP-T1-RE3 SIR622DP-T1-RE3 sir622dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SIR622
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 150V 12.6A PPAK
Base Part Number: SIR622
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4526 Stücke
Lieferzeit 21-28 Tag (e)
SQ9945BEY-T1_BE3 SQ9945BEY-T1_BE3 Vishay Siliconix Description: MOSFET 2N-CH 60V 5.4A
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 60V 5.4A
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
auf Bestellung 2490 Stücke
Lieferzeit 21-28 Tag (e)
IRL520PBF-BE3 IRL520PBF-BE3 sihl520.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 1369 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.82 EUR
10+ 3.43 EUR
100+ 2.67 EUR
500+ 2.21 EUR
1000+ 1.74 EUR
DG9233EDY-T1-GE3 DG9233EDY-T1-GE3 dg9232e.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8SOIC
Base Part Number: DG9233
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH DUAL SPST 8SOIC
Base Part Number: DG9233
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1960 Stücke
Lieferzeit 21-28 Tag (e)
DG9233EDQ-T1-GE3 DG9233EDQ-T1-GE3 dg9232e.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8MSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 25Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: -0.78pC
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -108dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: DG9233
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH DUAL SPST 8MSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 25Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: -0.78pC
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -108dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: DG9233
auf Bestellung 799 Stücke
Lieferzeit 21-28 Tag (e)
DG9233EDS-T1-GE3 Vishay Siliconix Description: IC SWITCH DUAL SPST SOT23-8
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: DG9233
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB068N60EF-GE3 SIHB068N60EF-GE3 sihb068n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 41A D2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB068
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2628pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIB457EDK-T1-GE3 SIB457EDK-T1-GE3 sib457ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Base Part Number: SIB457
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIB457
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
auf Bestellung 5411 Stücke
Lieferzeit 21-28 Tag (e)
SI1403BDL-T1-BE3 SI1403BDL-T1-BE3 si1403bdl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.4A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 568mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1403
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2954 Stücke - Preis und Lieferfrist anzeigen
SIHP12N60E-BE3 SIHP12N60E-BE3 sihp12n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.34 EUR
100+ 5.1 EUR
500+ 4.19 EUR
1000+ 3.59 EUR
SIJ462ADP-T1-GE3 SIJ462ADP-T1-GE3 sij462adp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 30V
Vgs (Max): ±20V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 39.3A (Tc)
Manufacturer: Vishay Siliconix
Base Part Number: SIJ462
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
Base Part Number: SIJ462
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 39.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6050 Stücke
Lieferzeit 21-28 Tag (e)
SIJ128LDP-T1-GE3 SIJ128LDP-T1-GE3 sij128ldp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
Base Part Number: SIJ128
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
Base Part Number: SIJ128
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6050 Stücke
Lieferzeit 21-28 Tag (e)
SIR104LDP-T1-RE3 SIR104LDP-T1-RE3 sir104ldp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SIR104
Part Status: Active
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR104
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 6050 Stücke
Lieferzeit 21-28 Tag (e)
SIR870BDP-T1-RE3 SIR870BDP-T1-RE3 sir870bdp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Supplier Device Package: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SIR870
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Base Part Number: SIR870
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
SIDR104ADP-T1-RE3 sidr104adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ264EP-T1_GE3 SQJ264EP-T1_GE3 sqj264ep.pdf Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Manufacturer: Vishay Siliconix
Base Part Number: SQJ264
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Manufacturer: Vishay Siliconix
Base Part Number: SQJ264
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Lieferzeit 21-28 Tag (e)
SQJA81EP-T1_GE3 SQJA81EP-T1_GE3 sqja81ep.pdf Vishay Siliconix Description: MOSFET P-CH 80V 46A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z14PBF-BE3 IRF9Z14PBF-BE3 91088.pdf Vishay Siliconix Description: MOSFET P-CH 60V 6.7A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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8+ 3.38 EUR
10+ 3.01 EUR
100+ 2.35 EUR
SIHA100N60E-GE3 SIHA100N60E-GE3 siha100n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 30A TO220
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
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Lieferzeit 21-28 Tag (e)
IRL620PBF-BE3 IRL620PBF-BE3 sih620.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
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Lieferzeit 21-28 Tag (e)
SUD23N06-31L-T4BE3 SUD23N06-31L-T4BE3 Vishay Siliconix Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD23N06-31-T4-GE3 SUD23N06-31-T4-GE3 sud23n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC438BEVB-B sic437.pdf Vishay Siliconix Description: SIC438B EVALUATION BOARD
Packaging: Box
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.6V ~ 20V
Current - Output: 8A
Voltage - Input: 4.5V ~ 28V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SiC438
Base Part Number: SIC438
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Lieferzeit 21-28 Tag (e)
SIC438AEVB-B SIC438AEVB-B sic437.pdf Vishay Siliconix Description: SIC438A EVALUATION BOARD
Packaging: Box
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.6V ~ 20V
Current - Output: 8A
Voltage - Input: 4.5V ~ 28V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SiC438
Base Part Number: SIC438
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Lieferzeit 21-28 Tag (e)
SIR180DP-T1-RE3 SIR180DP-T1-RE3 sir180dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 32.4A/60A PPAK
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 32.4A/60A PPAK
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
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Lieferzeit 21-28 Tag (e)
IRFB9N65APBF-BE3 IRFB9N65APBF-BE3 91104.pdf Vishay Siliconix Description: MOSFET N-CH 650V 8.5A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 968 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.46 EUR
10+ 6.7 EUR
100+ 5.49 EUR
500+ 4.67 EUR
SISS98DN-T1-GE3 SISS98DN-T1-GE3 siss98dn.pdf Vishay Siliconix Description: MOSFET N-CH 200V 14.1A PPAK
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 100V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS98
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 200V 14.1A PPAK
Base Part Number: SISS98
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
SI3458BDV-T1-BE3 SI3458BDV-T1-BE3 Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6-TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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Lieferzeit 21-28 Tag (e)
IRFZ40PBF-BE3 IRFZ40PBF-BE3 sihfz40.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Lieferzeit 21-28 Tag (e)
4+ 7.28 EUR
10+ 6.54 EUR
100+ 5.26 EUR
500+ 4.32 EUR
IRFR014TRPBF-BE3 IRFR014TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR014TRLPBF-BE3 IRFR014TRLPBF-BE3 sihfr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
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Lieferzeit 21-28 Tag (e)
IRFR014PBF-BE3 IRFR014PBF-BE3 sihfr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Base Part Number: IRFR014
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
DG611EEN-T1-GE4 DG611EEN-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 16MINIQFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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Lieferzeit 21-28 Tag (e)
3000+ 1.9 EUR
Vishay Siliconix Description: IC ANALOG SWITCH 16MINIQFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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Lieferzeit 21-28 Tag (e)
7+ 4.03 EUR
10+ 3.6 EUR
25+ 3.42 EUR
100+ 2.81 EUR
250+ 2.62 EUR
500+ 2.32 EUR
1000+ 1.9 EUR
DG613EEN-T1-GE4 DG613EEN-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 16MINIQFN
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC ANALOG SWITCH 16MINIQFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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Lieferzeit 21-28 Tag (e)
7+ 4.03 EUR
SIP32429EVB sip32429.pdf Vishay Siliconix Description: EVAL BOARD FOR SIP32429
Packaging: Bulk
Part Status: Active
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Utilized IC / Part: SIP32429
Supplied Contents: Board(s)
Base Part Number: SIP324
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Lieferzeit 21-28 Tag (e)
DG1413EEQ-T1-GE3 dg1411e.pdf Vishay Siliconix Description: IC ANLG SWITCH QUAD SPST 16TSSOP
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA938DJT-T1-GE3 SIA938DJT-T1-GE3 sia938djt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
Base Part Number: SIA938
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SIR167DP-T1-GE3 SIR167DP-T1-GE3 sir167dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIR167
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Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIR167
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Lieferzeit 21-28 Tag (e)
SIR180ADP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 60V PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR180
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR180
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Lieferzeit 21-28 Tag (e)
SIR104ADP-T1-RE3 SIR104ADP-T1-RE3 sir104adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR104
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 18.8A/81A PPAK
Base Part Number: SIR104
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
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SISA66DN-T1-GE3 SISA66DN-T1-GE3 sisa66dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A POWERPAK1212
Base Part Number: SISA66
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3014pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS50DN-T1-GE3 siss50dn.pdf Vishay Siliconix Description: MOSFET N-CH 45-V PPAK 1212-8S
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISS50
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 45-V PPAK 1212-8S
Base Part Number: SISS50
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SI1967DH-T1-BE3 SI1967DH-T1-BE3 SI1967DH.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 1.3A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 740mW (Ta), 1.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2P-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 740mW (Ta), 1.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1914 Stücke
Lieferzeit 21-28 Tag (e)
SI1411DH-T1-BE3 SI1411DH-T1-BE3 si1411dh.pdf Vishay Siliconix Description: MOSFET P-CH 150V 420MA SC70-6
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1411
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR1N60APBF-BE3 IRFR1N60APBF-BE3 sihfr1n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.06 EUR
10+ 3.65 EUR
100+ 2.93 EUR
500+ 2.41 EUR
1000+ 2.06 EUR
SQJ200EP-T1_GE3 SQJ200EP-T1_GE3 sqj200ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Base Part Number: SQJ200
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Base Part Number: SQJ200
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2147 Stücke
Lieferzeit 21-28 Tag (e)
SQJ202EP-T1_GE3 SQJ202EP-T1_GE3 sqj202ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 20A/60A PPAK SO
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQJ202
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
auf Bestellung 4201 Stücke
Lieferzeit 21-28 Tag (e)
SQJ244EP-T1_GE3 SQJ244EP-T1_GE3 sqj244ep.pdf Vishay Siliconix Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJ244
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
Base Part Number: SQJ244
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2960 Stücke
Lieferzeit 21-28 Tag (e)
SQJ204EP-T1_GE3 SQJ204EP-T1_GE3 sqj204ep.pdf Vishay Siliconix Description: MOSFET DUAL N-CH 12V PPAK SO-8L
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: 2 N-Channel (Dual) Asymmetrical
Power - Max: 27W (Tc), 48W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL N-CH 12V PPAK SO-8L
FET Type: 2 N-Channel (Dual) Asymmetrical
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.87 EUR
10+ 3.48 EUR
SQJ208EP-T1_GE3 SQJ208EP-T1_GE3 sqj208ep.pdf Vishay Siliconix Description: MOSFET DUAL N-CH AUTO 40V PP SO-
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF, 3900pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Base Part Number: SQJ208
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL N-CH AUTO 40V PP SO-
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF, 3900pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Base Part Number: SQJ208
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
SIHA186N60EF-GE3 siha186n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 8.4A TO220
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.49 EUR
10+ 6.73 EUR
100+ 5.51 EUR
500+ 4.69 EUR
1000+ 4.24 EUR
SQ3585EV-T1_GE3 SQ3585EV-T1_GE3 sq3585ev.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 6TSOP
Base Part Number: SQ3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N/P-CH 20V 6TSOP
Base Part Number: SQ3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3343 Stücke
Lieferzeit 21-28 Tag (e)
SQ3457EV-T1_GE3 SQ3457EV-T1_GE3 sq3457ev.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ3457
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
auf Bestellung 2111 Stücke
Lieferzeit 21-28 Tag (e)
SQJ486EP-T1_GE3 SQJ486EP-T1_GE3 sqj486ep.pdf Vishay Siliconix Description: MOSFET N-CH 75V POWERPAK SO8L
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V
Power Dissipation (Max): 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: 8-PowerTDFN
Base Part Number: SQJ486
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 75V POWERPAK SO8L
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V
Power Dissipation (Max): 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: 8-PowerTDFN
Base Part Number: SQJ486
auf Bestellung 4915 Stücke
Lieferzeit 21-28 Tag (e)
IRFL210TRPBF-BE3 sihfl210.pdf
IRFL210TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 0.96A SOT223
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1665 Stücke - Preis und Lieferfrist anzeigen
IRFR024TRPBF-BE3 sihfr024.pdf
IRFR024TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBC40PBF-BE3 91115.pdf
IRFBC40PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1033 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.29 EUR
10+ 5.66 EUR
100+ 4.55 EUR
500+ 3.74 EUR
1000+ 3.21 EUR
IRFBC40APBF-BE3 sihfbc40.pdf
IRFBC40APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.53 EUR
10+ 5.86 EUR
100+ 4.71 EUR
500+ 3.87 EUR
IRFBC40LCPBF-BE3 sihfbc40lc.pdf
IRFBC40LCPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 848 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.52 EUR
10+ 10.34 EUR
100+ 8.47 EUR
500+ 7.21 EUR
IRFBE30PBF-BE3 91118.pdf
IRFBE30PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
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Lieferzeit 21-28 Tag (e)
5+ 5.8 EUR
10+ 5.23 EUR
100+ 4.2 EUR
500+ 3.45 EUR
1000+ 2.96 EUR
SISS32ADN-T1-GE3
SISS32ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF620PBF-BE3 sihf620.pdf
IRF620PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 471 Stücke
Lieferzeit 21-28 Tag (e)
9+ 2.91 EUR
11+ 2.6 EUR
100+ 2.02 EUR
SQ1431EH-T1_GE3 sq1431eh.pdf
SQ1431EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ1431
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Vgs (Max): ±20V
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SQ1431EH-T1_GE3 sq1431eh.pdf
SQ1431EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70-6
Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ1431
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
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Lieferzeit 21-28 Tag (e)
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SIR622DP-T1-RE3 sir622dp.pdf
SIR622DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SIR622
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Lieferzeit 21-28 Tag (e)
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SIR622DP-T1-RE3 sir622dp.pdf
SIR622DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK
Base Part Number: SIR622
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQ9945BEY-T1_BE3
SQ9945BEY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2490 Stücke - Preis und Lieferfrist anzeigen
SQ9945BEY-T1_BE3
SQ9945BEY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
auf Bestellung 2490 Stücke
Lieferzeit 21-28 Tag (e)
IRL520PBF-BE3 sihl520.pdf
IRL520PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 1369 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.82 EUR
10+ 3.43 EUR
100+ 2.67 EUR
500+ 2.21 EUR
1000+ 1.74 EUR
DG9233EDY-T1-GE3 dg9232e.pdf
DG9233EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Base Part Number: DG9233
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1960 Stücke - Preis und Lieferfrist anzeigen
DG9233EDY-T1-GE3 dg9232e.pdf
DG9233EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Base Part Number: DG9233
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1960 Stücke
Lieferzeit 21-28 Tag (e)
DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 25Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: -0.78pC
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -108dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: DG9233
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG9233EDQ-T1-GE3 dg9232e.pdf
DG9233EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 25Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: -0.78pC
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -108dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: DG9233
auf Bestellung 799 Stücke
Lieferzeit 21-28 Tag (e)
DG9233EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST SOT23-8
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: DG9233
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB068N60EF-GE3 sihb068n60ef.pdf
SIHB068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A D2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB068
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2628pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIB457EDK-T1-GE3 sib457ed.pdf
SIB457EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Base Part Number: SIB457
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIB457EDK-T1-GE3 sib457ed.pdf
SIB457EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIB457
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
auf Bestellung 5411 Stücke
Lieferzeit 21-28 Tag (e)
SI1403BDL-T1-BE3 si1403bdl.pdf
SI1403BDL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 568mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1403
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHP12N60E-BE3 sihp12n6.pdf
SIHP12N60E-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.34 EUR
100+ 5.1 EUR
500+ 4.19 EUR
1000+ 3.59 EUR
SIJ462ADP-T1-GE3 sij462adp.pdf
SIJ462ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 30V
Vgs (Max): ±20V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 39.3A (Tc)
Manufacturer: Vishay Siliconix
Base Part Number: SIJ462
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 6050 Stücke - Preis und Lieferfrist anzeigen
SIJ462ADP-T1-GE3 sij462adp.pdf
SIJ462ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15.8A/39.3A PPAK
Base Part Number: SIJ462
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 39.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SIJ128LDP-T1-GE3 sij128ldp.pdf
SIJ128LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
Base Part Number: SIJ128
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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SIJ128LDP-T1-GE3 sij128ldp.pdf
SIJ128LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 10.2A/25.5A PPAK
Base Part Number: SIJ128
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SIR104LDP-T1-RE3 sir104ldp.pdf
SIR104LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SIR104
Part Status: Active
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
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SIR104LDP-T1-RE3 sir104ldp.pdf
SIR104LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR104
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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SIR870BDP-T1-RE3 sir870bdp.pdf
SIR870BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Supplier Device Package: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SIR870
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
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SIR870BDP-T1-RE3 sir870bdp.pdf
SIR870BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Base Part Number: SIR870
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIDR104ADP-T1-RE3 sidr104adp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ264EP-T1_GE3 sqj264ep.pdf
SQJ264EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Manufacturer: Vishay Siliconix
Base Part Number: SQJ264
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ264EP-T1_GE3 sqj264ep.pdf
SQJ264EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Manufacturer: Vishay Siliconix
Base Part Number: SQJ264
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Lieferzeit 21-28 Tag (e)
SQJA81EP-T1_GE3 sqja81ep.pdf
SQJA81EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 46A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z14PBF-BE3 91088.pdf
IRF9Z14PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 6.7A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 465 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.38 EUR
10+ 3.01 EUR
100+ 2.35 EUR
SIHA100N60E-GE3 siha100n60e.pdf
SIHA100N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO220
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
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Lieferzeit 21-28 Tag (e)
IRL620PBF-BE3 sih620.pdf
IRL620PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 990 Stücke
Lieferzeit 21-28 Tag (e)
SUD23N06-31L-T4BE3
SUD23N06-31L-T4BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD23N06-31-T4-GE3 sud23n06.pdf
SUD23N06-31-T4-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC438BEVB-B sic437.pdf
Hersteller: Vishay Siliconix
Description: SIC438B EVALUATION BOARD
Packaging: Box
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.6V ~ 20V
Current - Output: 8A
Voltage - Input: 4.5V ~ 28V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SiC438
Base Part Number: SIC438
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Lieferzeit 21-28 Tag (e)
SIC438AEVB-B sic437.pdf
SIC438AEVB-B
Hersteller: Vishay Siliconix
Description: SIC438A EVALUATION BOARD
Packaging: Box
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.6V ~ 20V
Current - Output: 8A
Voltage - Input: 4.5V ~ 28V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SiC438
Base Part Number: SIC438
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Lieferzeit 21-28 Tag (e)
SIR180DP-T1-RE3 sir180dp.pdf
SIR180DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32.4A/60A PPAK
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
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Lieferzeit 21-28 Tag (e)
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SIR180DP-T1-RE3 sir180dp.pdf
SIR180DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32.4A/60A PPAK
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
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Lieferzeit 21-28 Tag (e)
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IRFB9N65APBF-BE3 91104.pdf
IRFB9N65APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 8.5A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 968 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.46 EUR
10+ 6.7 EUR
100+ 5.49 EUR
500+ 4.67 EUR
SISS98DN-T1-GE3 siss98dn.pdf
SISS98DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 14.1A PPAK
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 100V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS98
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8712 Stücke - Preis und Lieferfrist anzeigen
SISS98DN-T1-GE3 siss98dn.pdf
SISS98DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 14.1A PPAK
Base Part Number: SISS98
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 8712 Stücke
Lieferzeit 21-28 Tag (e)
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SI3458BDV-T1-BE3
SI3458BDV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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SI3458BDV-T1-BE3
SI3458BDV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6-TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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IRFZ40PBF-BE3 sihfz40.pdf
IRFZ40PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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10+ 6.54 EUR
100+ 5.26 EUR
500+ 4.32 EUR
IRFR014TRPBF-BE3
IRFR014TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR014TRLPBF-BE3 sihfr014.pdf
IRFR014TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
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IRFR014TRLPBF-BE3 sihfr014.pdf
IRFR014TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
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IRFR014PBF-BE3 sihfr014.pdf
IRFR014PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Base Part Number: IRFR014
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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DG611EEN-T1-GE4 dg611e.pdf
DG611EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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DG611EEN-T1-GE4 dg611e.pdf
DG611EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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10+ 3.6 EUR
25+ 3.42 EUR
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1000+ 1.9 EUR
DG613EEN-T1-GE4 dg611e.pdf
DG613EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG613EEN-T1-GE4 dg611e.pdf
DG613EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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SIP32429EVB sip32429.pdf
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIP32429
Packaging: Bulk
Part Status: Active
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Utilized IC / Part: SIP32429
Supplied Contents: Board(s)
Base Part Number: SIP324
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DG1413EEQ-T1-GE3 dg1411e.pdf
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH QUAD SPST 16TSSOP
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA938DJT-T1-GE3 sia938djt.pdf
SIA938DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
Base Part Number: SIA938
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIR167DP-T1-GE3 sir167dp.pdf
SIR167DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIR167
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SIR167DP-T1-GE3 sir167dp.pdf
SIR167DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIR167
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SIR180ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR180
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SIR180ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR180
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SIR104ADP-T1-RE3 sir104adp.pdf
SIR104ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR104
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
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SIR104ADP-T1-RE3 sir104adp.pdf
SIR104ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Base Part Number: SIR104
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
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SISA66DN-T1-GE3 sisa66dn.pdf
SISA66DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A POWERPAK1212
Base Part Number: SISA66
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3014pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS50DN-T1-GE3 siss50dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45-V PPAK 1212-8S
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISS50
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SISS50DN-T1-GE3 siss50dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45-V PPAK 1212-8S
Base Part Number: SISS50
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SI1967DH-T1-BE3 SI1967DH.pdf
SI1967DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 740mW (Ta), 1.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1914 Stücke - Preis und Lieferfrist anzeigen
SI1967DH-T1-BE3 SI1967DH.pdf
SI1967DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 740mW (Ta), 1.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1914 Stücke
Lieferzeit 21-28 Tag (e)
SI1411DH-T1-BE3 si1411dh.pdf
SI1411DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 420MA SC70-6
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1411
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR1N60APBF-BE3 sihfr1n6.pdf
IRFR1N60APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.06 EUR
10+ 3.65 EUR
100+ 2.93 EUR
500+ 2.41 EUR
1000+ 2.06 EUR
SQJ200EP-T1_GE3 sqj200ep.pdf
SQJ200EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Base Part Number: SQJ200
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2147 Stücke - Preis und Lieferfrist anzeigen
SQJ200EP-T1_GE3 sqj200ep.pdf
SQJ200EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Base Part Number: SQJ200
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SQJ202EP-T1_GE3 sqj202ep.pdf
SQJ202EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A/60A PPAK SO
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQJ202
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
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Lieferzeit 21-28 Tag (e)
SQJ244EP-T1_GE3 sqj244ep.pdf
SQJ244EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJ244
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ244EP-T1_GE3 sqj244ep.pdf
SQJ244EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
Base Part Number: SQJ244
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2960 Stücke
Lieferzeit 21-28 Tag (e)
SQJ204EP-T1_GE3 sqj204ep.pdf
SQJ204EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 12V PPAK SO-8L
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: 2 N-Channel (Dual) Asymmetrical
Power - Max: 27W (Tc), 48W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
SQJ204EP-T1_GE3 sqj204ep.pdf
SQJ204EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 12V PPAK SO-8L
FET Type: 2 N-Channel (Dual) Asymmetrical
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.87 EUR
10+ 3.48 EUR
SQJ208EP-T1_GE3 sqj208ep.pdf
SQJ208EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH AUTO 40V PP SO-
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF, 3900pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Base Part Number: SQJ208
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
SQJ208EP-T1_GE3 sqj208ep.pdf
SQJ208EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH AUTO 40V PP SO-
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF, 3900pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Base Part Number: SQJ208
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
SIHA186N60EF-GE3 siha186n60ef.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A TO220
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.49 EUR
10+ 6.73 EUR
100+ 5.51 EUR
500+ 4.69 EUR
1000+ 4.24 EUR
SQ3585EV-T1_GE3 sq3585ev.pdf
SQ3585EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Base Part Number: SQ3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3343 Stücke - Preis und Lieferfrist anzeigen
SQ3585EV-T1_GE3 sq3585ev.pdf
SQ3585EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Base Part Number: SQ3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3343 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQ3457EV-T1_GE3 sq3457ev.pdf
SQ3457EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ3457
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
auf Bestellung 2111 Stücke
Lieferzeit 21-28 Tag (e)
SQJ486EP-T1_GE3 sqj486ep.pdf
SQJ486EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V POWERPAK SO8L
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V
Power Dissipation (Max): 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: 8-PowerTDFN
Base Part Number: SQJ486
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4915 Stücke - Preis und Lieferfrist anzeigen
SQJ486EP-T1_GE3 sqj486ep.pdf
SQJ486EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V POWERPAK SO8L
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V
Power Dissipation (Max): 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: 8-PowerTDFN
Base Part Number: SQJ486
auf Bestellung 4915 Stücke
Lieferzeit 21-28 Tag (e)
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