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SIHG25N40D-GE3 SIHG25N40D-GE3 Vishay Siliconix sihg25n40d.pdf Description: MOSFET N-CH 400V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 66 Stücke:
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3+6.14 EUR
10+4.25 EUR
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SIHG30N60E-GE3 SIHG30N60E-GE3 Vishay Siliconix sihg30n60e.pdf Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 486 Stücke:
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2+10.33 EUR
10+7.14 EUR
100+5.96 EUR
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SIHG32N50D-E3 SIHG32N50D-E3 Vishay Siliconix sihg32n50d.pdf Description: MOSFET N-CH 500V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG460B-GE3 SIHG460B-GE3 Vishay Siliconix sihg460b.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG47N60EF-GE3 SIHG47N60EF-GE3 Vishay Siliconix sihg47n60ef.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
auf Bestellung 439 Stücke:
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10+11.23 EUR
100+10.12 EUR
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SIHG47N60E-GE3 SIHG47N60E-GE3 Vishay Siliconix sihg47n60e.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 61 Stücke:
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SiHG73N60E-E3 SiHG73N60E-E3 Vishay Siliconix sihg73n60e.pdf Description: MOSFET N-CH 600V 73A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP14N50D-GE3 SIHP14N50D-GE3 Vishay Siliconix sihp14n50d.pdf Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP15N60E-GE3 SIHP15N60E-GE3 Vishay Siliconix sihp15n60e.pdf Description: MOSFET N-CH 600V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 16520 Stücke:
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5+4.1 EUR
50+2.36 EUR
100+2.33 EUR
500+2 EUR
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SIHP17N60D-GE3 SIHP17N60D-GE3 Vishay Siliconix sihp17n60d.pdf Description: MOSFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP21N65EF-GE3 SIHP21N65EF-GE3 Vishay Siliconix sihb21n65ef.pdf Description: MOSFET N-CH 650V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP24N65EF-GE3 SIHP24N65EF-GE3 Vishay Siliconix SiHP24N65EF.pdf Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2656 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP7N60E-E3 SIHP7N60E-E3 Vishay Siliconix sihp7n60e.pdf Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHS20N50C-E3 SIHS20N50C-E3 Vishay Siliconix Description: MOSFET N-CH 500V 20A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250mW (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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SIHU7N60E-E3 SIHU7N60E-E3 Vishay Siliconix sihu7n60e.pdf Description: MOSFET N-CH 600V 7A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHW23N60E-GE3 SIHW23N60E-GE3 Vishay Siliconix sihw23n60e.pdf Description: MOSFET N-CH 600V 23A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Produkt ist nicht verfügbar
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SIHW47N60EF-GE3 SIHW47N60EF-GE3 Vishay Siliconix sihw47n60ef.pdf Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 462 Stücke:
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SiHW47N65E-GE3 SiHW47N65E-GE3 Vishay Siliconix sihw47n65e.pdf Description: MOSFET N-CH 650V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
Produkt ist nicht verfügbar
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SIHW73N60E-GE3 SIHW73N60E-GE3 Vishay Siliconix SiHW73N60E.pdf Description: MOSFET N-CH 600V 73A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Produkt ist nicht verfügbar
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SIP1759DH-T1-E3 SIP1759DH-T1-E3 Vishay Siliconix SIP1759.pdf Description: IC REG CHARG PUMP AD/3.3V 10MSOP
Produkt ist nicht verfügbar
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SIP32401DNP-T1-GE4 SIP32401DNP-T1-GE4 Vishay Siliconix Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP32408DNP-T1-GE4 SIP32408DNP-T1-GE4 Vishay Siliconix sip32408.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.3 EUR
6000+0.29 EUR
15000+0.28 EUR
Mindestbestellmenge: 3000
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SIP32409DNP-T1-GE4 SIP32409DNP-T1-GE4 Vishay Siliconix sip32408.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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SIP32508DT-T1-GE3 SIP32508DT-T1-GE3 Vishay Siliconix sip32508.pdf Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
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SIP32509DT-T1-GE3 SIP32509DT-T1-GE3 Vishay Siliconix sip32508.pdf Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
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SIP32510DT-T1-GE3 SIP32510DT-T1-GE3 Vishay Siliconix sip32510.pdf Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
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SIP4282ADNP2-T1GE4 SIP4282ADNP2-T1GE4 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4282ADNP3-T1GE4 SIP4282ADNP3-T1GE4 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
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SIP4282ADVP2-T1GE3 SIP4282ADVP2-T1GE3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4282ADVP3-T1GE3 SIP4282ADVP3-T1GE3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4282DNP3-T1GE4 SIP4282DNP3-T1GE4 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: UVLO
Part Status: Active
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3000+0.42 EUR
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SIP4282DVP3-T1GE3 SIP4282DVP3-T1GE3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Fault Protection: UVLO
Part Status: Active
Produkt ist nicht verfügbar
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SIP4612BDVP-T1-E3 Vishay Siliconix sip4612.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® TSC-75-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 2.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® TSC75-6
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIR330DP-T1-GE3 SIR330DP-T1-GE3 Vishay Siliconix sir330dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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SIR482DP-T1-GE3 SIR482DP-T1-GE3 Vishay Siliconix sir482dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
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SIR672DP-T1-GE3 Vishay Siliconix SIR672DP.pdf Description: MOSFET N-CH 80V 27.6A SO-8
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SIR770DP-T1-GE3 SIR770DP-T1-GE3 Vishay Siliconix sir770dp.pdf Description: MOSFET 2N-CH 30V 8A PPAK SO-8
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SIR814DP-T1-GE3 SIR814DP-T1-GE3 Vishay Siliconix sir814dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
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SIR818DP-T1-GE3 SIR818DP-T1-GE3 Vishay Siliconix sir818dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
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SIR864DP-T1-GE3 SIR864DP-T1-GE3 Vishay Siliconix sir864dp.pdf Description: MOSFET N-CH 30V 40A PPAK 8SO
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SIR872DP-T1-GE3 SIR872DP-T1-GE3 Vishay Siliconix sir872dp.pdf Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V
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SIRA34DP-T1-GE3 SIRA34DP-T1-GE3 Vishay Siliconix sira34dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
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SIS330DN-T1-GE3 SIS330DN-T1-GE3 Vishay Siliconix sis330dn.pdf Description: MOSFET N-CH 30V 35A 1212-8
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SIS334DN-T1-GE3 SIS334DN-T1-GE3 Vishay Siliconix sis334dn.pdf Description: MOSFET N-CH 30V 20A 1212-8
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SIS448DN-T1-GE3 SIS448DN-T1-GE3 Vishay Siliconix sis448dn.pdf Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 15 V
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SIS472DN-T1-GE3 SIS472DN-T1-GE3 Vishay Siliconix sis472dn.pdf Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
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6000+0.39 EUR
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SIS776DN-T1-GE3 SIS776DN-T1-GE3 Vishay Siliconix sis776dn.pdf Description: MOSFET N-CH 30V 35A 1212-8
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SISA12ADN-T1-GE3 SISA12ADN-T1-GE3 Vishay Siliconix sisa12adn.pdf Description: MOSFET N-CH 30V 25A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
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SISA18ADN-T1-GE3 SISA18ADN-T1-GE3 Vishay Siliconix sisa18adn.pdf Description: MOSFET N-CH 30V 38.3A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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3000+0.37 EUR
6000+0.34 EUR
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SJM181BCA01 Vishay Siliconix Description: IC ANALOG SWITCH DUAL SPST 14DIP
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SJM181BCC01 Vishay Siliconix Description: IC ANALOG SWITCH DUAL SPST 14DIP
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SJM181BIA01 Vishay Siliconix Description: IC ANALOG SWITCH DUAL SPST 14DIP
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SJM181BIC01 Vishay Siliconix Description: IC ANALOG SWITCH DUAL SPST 14DIP
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SJM181BXA Vishay Siliconix Description: IC ANALOG SWITCH DUAL SPST 14DIP
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SJM181BXC Vishay Siliconix Description: IC ANALOG SWITCH DUAL SPST 14DIP
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SJM182BXC Vishay Siliconix Description: IC ANALOG SWITCH
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SJM184BEA01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM184BEC01 Vishay Siliconix Description: IC ANALOG SWITCH
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SJM184BXA Vishay Siliconix Description: IC ANALOG SWITCH
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SJM184BXC Vishay Siliconix Description: IC ANALOG SWITCH
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SIHG25N40D-GE3 sihg25n40d.pdf
SIHG25N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
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Anzahl Preis
3+6.14 EUR
10+4.25 EUR
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SIHG30N60E-GE3 sihg30n60e.pdf
SIHG30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 486 Stücke:
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Anzahl Preis
2+10.33 EUR
10+7.14 EUR
100+5.96 EUR
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SIHG32N50D-E3 sihg32n50d.pdf
SIHG32N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
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SIHG460B-GE3 sihg460b.pdf
SIHG460B-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG47N60EF-GE3 sihg47n60ef.pdf
SIHG47N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.62 EUR
10+11.23 EUR
100+10.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHG47N60E-GE3 sihg47n60e.pdf
SIHG47N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.85 EUR
50+9.9 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SiHG73N60E-E3 sihg73n60e.pdf
SiHG73N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 73A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP14N50D-GE3 sihp14n50d.pdf
SIHP14N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP15N60E-GE3 sihp15n60e.pdf
SIHP15N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 16520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
50+2.36 EUR
100+2.33 EUR
500+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N60D-GE3 sihp17n60d.pdf
SIHP17N60D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP21N65EF-GE3 sihb21n65ef.pdf
SIHP21N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP24N65EF-GE3 SiHP24N65EF.pdf
SIHP24N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2656 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP7N60E-E3 sihp7n60e.pdf
SIHP7N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHS20N50C-E3
SIHS20N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250mW (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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SIHU7N60E-E3 sihu7n60e.pdf
SIHU7N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHW23N60E-GE3 sihw23n60e.pdf
SIHW23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHW47N60EF-GE3 sihw47n60ef.pdf
SIHW47N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.8 EUR
10+7.65 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SiHW47N65E-GE3 sihw47n65e.pdf
SiHW47N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
Produkt ist nicht verfügbar
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SIHW73N60E-GE3 SiHW73N60E.pdf
SIHW73N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 73A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Produkt ist nicht verfügbar
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SIP1759DH-T1-E3 SIP1759.pdf
SIP1759DH-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG CHARG PUMP AD/3.3V 10MSOP
Produkt ist nicht verfügbar
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SIP32401DNP-T1-GE4
SIP32401DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP32408DNP-T1-GE4 sip32408.pdf
SIP32408DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.29 EUR
15000+0.28 EUR
Mindestbestellmenge: 3000
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SIP32409DNP-T1-GE4 sip32408.pdf
SIP32409DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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SIP32508DT-T1-GE3 sip32508.pdf
SIP32508DT-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32509DT-T1-GE3 sip32508.pdf
SIP32509DT-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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SIP32510DT-T1-GE3 sip32510.pdf
SIP32510DT-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP4282ADNP2-T1GE4 sip4282.pdf
SIP4282ADNP2-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4282ADNP3-T1GE4 sip4282.pdf
SIP4282ADNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
Mindestbestellmenge: 3000
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SIP4282ADVP2-T1GE3 sip4282.pdf
SIP4282ADVP2-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4282ADVP3-T1GE3 sip4282.pdf
SIP4282ADVP3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4282DNP3-T1GE4 sip4282.pdf
SIP4282DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: UVLO
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP4282DVP3-T1GE3 sip4282.pdf
SIP4282DVP3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Fault Protection: UVLO
Part Status: Active
Produkt ist nicht verfügbar
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SIP4612BDVP-T1-E3 sip4612.pdf
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® TSC-75-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 2.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® TSC75-6
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIR330DP-T1-GE3 sir330dp.pdf
SIR330DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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SIR482DP-T1-GE3 sir482dp.pdf
SIR482DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
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SIR672DP-T1-GE3 SIR672DP.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 27.6A SO-8
Produkt ist nicht verfügbar
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SIR770DP-T1-GE3 sir770dp.pdf
SIR770DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Produkt ist nicht verfügbar
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SIR814DP-T1-GE3 sir814dp.pdf
SIR814DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Produkt ist nicht verfügbar
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SIR818DP-T1-GE3 sir818dp.pdf
SIR818DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.85 EUR
Mindestbestellmenge: 3000
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SIR864DP-T1-GE3 sir864dp.pdf
SIR864DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK 8SO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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SIR872DP-T1-GE3 sir872dp.pdf
SIR872DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V
Produkt ist nicht verfügbar
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SIRA34DP-T1-GE3 sira34dp.pdf
SIRA34DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Produkt ist nicht verfügbar
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SIS330DN-T1-GE3 sis330dn.pdf
SIS330DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Produkt ist nicht verfügbar
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SIS334DN-T1-GE3 sis334dn.pdf
SIS334DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8
Produkt ist nicht verfügbar
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SIS448DN-T1-GE3 sis448dn.pdf
SIS448DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 15 V
Produkt ist nicht verfügbar
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SIS472DN-T1-GE3 sis472dn.pdf
SIS472DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.39 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000
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SIS776DN-T1-GE3 sis776dn.pdf
SIS776DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Produkt ist nicht verfügbar
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SISA12ADN-T1-GE3 sisa12adn.pdf
SISA12ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
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SISA18ADN-T1-GE3 sisa18adn.pdf
SISA18ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
6000+0.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SJM181BCA01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL SPST 14DIP
Produkt ist nicht verfügbar
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SJM181BCC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL SPST 14DIP
Produkt ist nicht verfügbar
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SJM181BIA01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL SPST 14DIP
Produkt ist nicht verfügbar
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SJM181BIC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL SPST 14DIP
Produkt ist nicht verfügbar
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SJM181BXA
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL SPST 14DIP
Produkt ist nicht verfügbar
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SJM181BXC
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL SPST 14DIP
Produkt ist nicht verfügbar
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SJM182BXC
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM184BEA01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM184BEC01
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM184BXA
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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SJM184BXC
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Produkt ist nicht verfügbar
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