Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10948) > Seite 107 nach 183
Foto | Bezeichnung | Hersteller | Beschreibung |
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DG613DY | Vishay Siliconix | Description: IC SWITCH QUAD NO/NC 16-SOIC |
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DG613DY-T1 | Vishay Siliconix | Description: IC SWITCH QUAD NO/NC 16-SOIC |
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DG641DJ | Vishay Siliconix |
Description: IC SWITCH SPST-NOX4 15OHM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 500MHz Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 19pC Crosstalk: -87dB @ 5MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 70ns, 50ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 4 |
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DG641DY | Vishay Siliconix |
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 500MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 19pC Crosstalk: -87dB @ 5MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 70ns, 50ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG641DY-T1 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 500MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 19pC Crosstalk: -87dB @ 5MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 70ns, 50ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 4 |
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DG642DJ | Vishay Siliconix |
Description: IC SWITCH SPDT X 1 8OHM 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 500MHz Supplier Device Package: 8-PDIP Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 40pC Crosstalk: -85dB @ 5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 500mOhm Switch Time (Ton, Toff) (Max): 100ns, 60ns Channel Capacitance (CS(off), CD(off)): 20pF, 20pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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DG642DY | Vishay Siliconix |
Description: IC SWITCH SPDT X 1 8OHM 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 500MHz Supplier Device Package: 8-SOIC Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 40pC Crosstalk: -85dB @ 5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 500mOhm Switch Time (Ton, Toff) (Max): 100ns, 60ns Channel Capacitance (CS(off), CD(off)): 20pF, 20pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
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DG642DY-T1 | Vishay Siliconix |
Description: IC SWITCH SPDT X 1 8OHM 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 500MHz Supplier Device Package: 8-SOIC Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 40pC Crosstalk: -85dB @ 5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 500mOhm Switch Time (Ton, Toff) (Max): 100ns, 60ns Channel Capacitance (CS(off), CD(off)): 20pF, 20pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
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DG643DJ | Vishay Siliconix |
Description: IC SWITCH SPDT X 2 15OHM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 500MHz Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 19pC Crosstalk: -87dB @ 5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 70ns, 50ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG643DY | Vishay Siliconix |
Description: IC SWITCH SPDT X 2 15OHM 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 500MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 19pC Crosstalk: -87dB @ 5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 70ns, 50ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 2 |
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DG643DY-T1 | Vishay Siliconix |
Description: IC SWITCH SPDT X 2 15OHM 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 500MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 15V Voltage - Supply, Dual (V±): ±3V ~ 15V Charge Injection: 19pC Crosstalk: -87dB @ 5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 70ns, 50ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 2 |
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DG721DN-T1-GE4 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-TDFN (2x2) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG722DN-T1-GE4 | Vishay Siliconix |
Description: IC SWITCH SPST-NCX2 4.5OHM 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-TDFN (2x2) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG723DN-T1-GE4 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-TDFN (2x2) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 2 |
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DG884DN | Vishay Siliconix | Description: IC VIDEO MULTIPLEXER 8X4 44PLCC |
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DG9232DY | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9232DY-T1 | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9233DY | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9233DY-T1 | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9262DY | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9262DY-T1 | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9263DY | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9263DY-T1 | Vishay Siliconix | Description: IC SWITCH DUAL SPST 8SOIC |
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DG9424DQ-T1 | Vishay Siliconix | Description: IC SWITCH QUAD SPST 16TSSOP |
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DG9431DV-T1 | Vishay Siliconix | Description: IC ANALOG SWITCH SPDT LV 6TSOP |
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DG9431DY | Vishay Siliconix | Description: IC ANALOG SWITCH SPDT LV 8SOIC |
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DG9431DY-T1 | Vishay Siliconix | Description: IC ANALOG SWITCH SPDT LV 8SOIC |
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DG9453EN-T1-E4 | Vishay Siliconix | Description: IC SWITCH DUAL SPST 16QFN |
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DG9461DY | Vishay Siliconix | Description: IC SWITCH LV SPDT 8SOIC |
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DG9461DY-T1 | Vishay Siliconix | Description: IC SWITCH LV SPDT 8SOIC |
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DG9636DN-T1-E4 | Vishay Siliconix |
Description: IC SW SPDTX2 110OHM 10MINIQFN Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 110Ohm -3db Bandwidth: 720MHz Supplier Device Package: 10-miniQFN (1.4x1.8) Voltage - Supply, Single (V+): 2.7V ~ 12V Charge Injection: 23.5pC Crosstalk: -67dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 4Ohm Switch Time (Ton, Toff) (Max): 70ns, 55ns Channel Capacitance (CS(off), CD(off)): 2pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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IRF840LCSTRRPBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFBF30STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 900V 3.6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFD113PBF | Vishay Siliconix |
Description: MOSFET N-CH 60V 800MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 2315 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP21N60L | Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
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IRFP22N60K | Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V |
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IRFP26N60L | Vishay Siliconix |
Description: MOSFET N-CH 600V 26A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V Power Dissipation (Max): 470W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V |
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IRFP27N60K | Vishay Siliconix |
Description: MOSFET N-CH 600V 27A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V |
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IRFPS38N60L | Vishay Siliconix |
Description: MOSFET N-CH 600V 38A SUPER247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V |
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IRFPS40N60K | Vishay Siliconix | Description: MOSFET N-CH 600V 40A SUPER247 |
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IRFS11N50ATRLP | Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V |
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IRFS11N50ATRRP | Vishay Siliconix |
Description: MOSFET N-CH 500V 11A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V |
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IRFZ24STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 60V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
Produkt ist nicht verfügbar |
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SI1012CR-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V Power Dissipation (Max): 240mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-75A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V |
auf Bestellung 84000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1013CX-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 450MA SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V Power Dissipation (Max): 190mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1016CX-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC89 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 220mW Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1028X-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V SC89-6 |
Produkt ist nicht verfügbar |
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SI1077X-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V SC89-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1317DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 1.4A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V Power Dissipation (Max): 500mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI1414DH-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 4A SOT-363 |
Produkt ist nicht verfügbar |
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SI1424EDH-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 4A SOT-363 |
Produkt ist nicht verfügbar |
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SI1441EDH-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4A SOT-363 |
auf Bestellung 1939 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1443EDH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 4A SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V |
auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1489EDH-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 2A SOT-363 |
Produkt ist nicht verfügbar |
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SI1539CDL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 0.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 340mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
Produkt ist nicht verfügbar |
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SI1553CDL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 340mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
Produkt ist nicht verfügbar |
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SI1902CDL-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 1.1A SC-70-6 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1907DL-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 530MA SC70 |
Produkt ist nicht verfügbar |
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SI2324DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 2.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2329DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V |
Produkt ist nicht verfügbar |
DG613DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-SOIC
Description: IC SWITCH QUAD NO/NC 16-SOIC
Produkt ist nicht verfügbar
DG613DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-SOIC
Description: IC SWITCH QUAD NO/NC 16-SOIC
Produkt ist nicht verfügbar
DG641DJ |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 15OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG641DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG641DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG642DJ |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 8OHM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG642DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG642DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG643DJ |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 15OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG643DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG643DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG721DN-T1-GE4 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPST-NOX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
DG722DN-T1-GE4 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 2
Description: IC SWITCH SPST-NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG723DN-T1-GE4 |
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Description: IC SW SPST-NO/NCX2 4.5OHM 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-TDFN (2x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
DG884DN |
Hersteller: Vishay Siliconix
Description: IC VIDEO MULTIPLEXER 8X4 44PLCC
Description: IC VIDEO MULTIPLEXER 8X4 44PLCC
Produkt ist nicht verfügbar
DG9232DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9232DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9233DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9233DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9262DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9262DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9263DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9263DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Description: IC SWITCH DUAL SPST 8SOIC
Produkt ist nicht verfügbar
DG9424DQ-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG9431DV-T1 |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 6TSOP
Description: IC ANALOG SWITCH SPDT LV 6TSOP
Produkt ist nicht verfügbar
DG9431DY |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
Description: IC ANALOG SWITCH SPDT LV 8SOIC
Produkt ist nicht verfügbar
DG9431DY-T1 |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
Description: IC ANALOG SWITCH SPDT LV 8SOIC
Produkt ist nicht verfügbar
DG9453EN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 16QFN
Description: IC SWITCH DUAL SPST 16QFN
Produkt ist nicht verfügbar
DG9461DY |
Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 8SOIC
Description: IC SWITCH LV SPDT 8SOIC
Produkt ist nicht verfügbar
DG9461DY-T1 |
Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 8SOIC
Description: IC SWITCH LV SPDT 8SOIC
Produkt ist nicht verfügbar
DG9636DN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 110OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 23.5pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SW SPDTX2 110OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 23.5pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
IRF840LCSTRRPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 500V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
IRFBF30STRLPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 900V 3.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 4.99 EUR |
IRFD113PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 800MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET N-CH 60V 800MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2315 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 5.02 EUR |
10+ | 4.16 EUR |
100+ | 3.31 EUR |
500+ | 2.8 EUR |
1000+ | 2.38 EUR |
2000+ | 2.26 EUR |
IRFP21N60L |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IRFP22N60K |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Produkt ist nicht verfügbar
IRFP26N60L |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Produkt ist nicht verfügbar
IRFP27N60K |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Description: MOSFET N-CH 600V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Produkt ist nicht verfügbar
IRFPS38N60L |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 38A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Description: MOSFET N-CH 600V 38A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Produkt ist nicht verfügbar
IRFPS40N60K |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A SUPER247
Description: MOSFET N-CH 600V 40A SUPER247
Produkt ist nicht verfügbar
IRFS11N50ATRLP |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Produkt ist nicht verfügbar
IRFS11N50ATRRP |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Produkt ist nicht verfügbar
IRFZ24STRLPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
SI1012CR-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Power Dissipation (Max): 240mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Description: MOSFET N-CH 20V SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Power Dissipation (Max): 240mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 84000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
9000+ | 0.21 EUR |
30000+ | 0.2 EUR |
75000+ | 0.17 EUR |
SI1013CX-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 450MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Power Dissipation (Max): 190mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Description: MOSFET P-CH 20V 450MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Power Dissipation (Max): 190mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
9000+ | 0.17 EUR |
30000+ | 0.16 EUR |
SI1016CX-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET N/P-CH 20V SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.28 EUR |
9000+ | 0.25 EUR |
SI1028X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V SC89-6
Description: MOSFET 2N-CH 30V SC89-6
Produkt ist nicht verfügbar
SI1077X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
Description: MOSFET P-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.33 EUR |
15000+ | 0.3 EUR |
SI1317DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
Description: MOSFET P-CH 20V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
Produkt ist nicht verfügbar
SI1414DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A SOT-363
Description: MOSFET N-CH 30V 4A SOT-363
Produkt ist nicht verfügbar
SI1424EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4A SOT-363
Description: MOSFET N-CH 20V 4A SOT-363
Produkt ist nicht verfügbar
SI1441EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A SOT-363
Description: MOSFET P-CH 20V 4A SOT-363
auf Bestellung 1939 Stücke:
Lieferzeit 21-28 Tag (e)SI1443EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Description: MOSFET P-CH 30V 4A SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.32 EUR |
9000+ | 0.29 EUR |
30000+ | 0.28 EUR |
SI1489EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 2A SOT-363
Description: MOSFET P-CH 8V 2A SOT-363
Produkt ist nicht verfügbar
SI1539CDL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET N/P-CH 30V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Produkt ist nicht verfügbar
SI1553CDL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET N/P-CH 20V SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Produkt ist nicht verfügbar
SI1902CDL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC-70-6
Description: MOSFET 2N-CH 20V 1.1A SC-70-6
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)SI1907DL-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 530MA SC70
Description: MOSFET 2P-CH 12V 530MA SC70
Produkt ist nicht verfügbar
SI2324DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Description: MOSFET N-CH 100V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.5 EUR |
6000+ | 0.47 EUR |
9000+ | 0.44 EUR |
30000+ | 0.43 EUR |
SI2329DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
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