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SIRA28BDP-T1-GE3 SIRA28BDP-T1-GE3 sira28bdp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 18A/38A PPAK SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 582pF @ 15V
Base Part Number: SIRA28
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 18A/38A PPAK SO8
Base Part Number: SIRA28
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 582pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5983 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SIRA64DP-T1-GE3 sira64dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA64
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIRA64
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 5980 Stücke
Lieferzeit 21-28 Tag (e)
SIR124DP-T1-RE3 SIR124DP-T1-RE3 sir124dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 40V
Base Part Number: SIR124
Package / Case: PowerPAK® SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Base Part Number: SIR124
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5290 Stücke
Lieferzeit 21-28 Tag (e)
SUD08P06-155L-GE3 SUD08P06-155L-GE3 sud08p06-155l-ge3.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8.4A TO252
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SUD08
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 60V 8.4A TO252
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SUD08
auf Bestellung 10634 Stücke
Lieferzeit 21-28 Tag (e)
IRFL214TRPBF-BE3 IRFL214TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 250V 790MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 250V 790MA SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 214 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.56 EUR
10+ 3.19 EUR
100+ 2.49 EUR
IRL630PBF IRL630PBF sihl630.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRL630SPBF IRL630SPBF sihl630s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
auf Bestellung 106 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.53 EUR
10+ 5.85 EUR
100+ 4.7 EUR
IRL630STRRPBF IRL630STRRPBF sihl630s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL630 IRL630 sihl630.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A TO220AB
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 98 Stücke - Preis und Lieferfrist anzeigen
IRL630S IRL630S Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL630STRL IRL630STRL IRF9Z34S_2.jpg Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.33 EUR
SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 15A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 986 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.15 EUR
10+ 6.42 EUR
100+ 5.16 EUR
500+ 4.24 EUR
SIHB17N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 15A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32430DN-T1-GE4 SIP32430DN-T1-GE4 sip32430.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: 10-DFN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 3.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 99mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 10-VFDFN Exposed Pad
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3481EV-T1_GE3 SQ3481EV-T1_GE3 sq3481ev.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP
Base Part Number: SQ3481
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP
Manufacturer: Vishay Siliconix
Base Part Number: SQ3481
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3570 Stücke
Lieferzeit 21-28 Tag (e)
SQ3457EV-T1_GE3 SQ3457EV-T1_GE3 sq3457ev.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Base Part Number: SQ3457
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2111 Stücke - Preis und Lieferfrist anzeigen
SQJQ148E-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ148
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 325W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD23N06-31L-T4-E3 SUD23N06-31L-T4-E3 sud23n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V TO252
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB00EP-T1_GE3 SQJB00EP-T1_GE3 sqjb00ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB00
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB00
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 7974 Stücke
Lieferzeit 21-28 Tag (e)
SIHD11N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 8A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB11N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 8A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG11N80AE-GE3 SIHG11N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 8A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC437DED-T1-GE3 SIC437DED-T1-GE3 sic437.pdf Vishay Siliconix Description: MICROBUCK POWERSAVE
Part Status: Active
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MICROBUCK POWERSAVE
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
auf Bestellung 1997 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.99 EUR
10+ 6.26 EUR
25+ 5.92 EUR
100+ 5.13 EUR
250+ 4.87 EUR
500+ 4.37 EUR
1000+ 4.1 EUR
SIC437BED-T1-GE3 SIC437BED-T1-GE3 sic437.pdf Vishay Siliconix Description: MICROBUCK POWERSAVE
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC438AED-T1-GE3 SIC438AED-T1-GE3 sic437.pdf Vishay Siliconix Description: MICROBUCK POWERSAVE
Packaging: Tape & Reel (TR)
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC437CED-T1-GE3 sic437.pdf Vishay Siliconix Description: 3 - 28V,12A MICROBUCK ULTRASONIC
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP38N60EF-GE3 SIHP38N60EF-GE3 sihp38n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 313W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3576pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: SIHP38
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR622DP-T1-GE3 SIR622DP-T1-GE3 sir622dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 51.6A PPAK SO-8
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIR622
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 7.5V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51.6A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2398ES-T1_GE3 SQ2398ES-T1_GE3 sq2398es.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.6A SOT23-3
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2398
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 95598 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 1.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2398
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 50V
Vgs (Max): ±20V
auf Bestellung 95598 Stücke
Lieferzeit 21-28 Tag (e)
SISA88DN-T1-GE3 SISA88DN-T1-GE3 SISA88DN_Rev.A_Oct02,2017_DS.pdf Vishay Siliconix Description: MOSFET N-CH 30V 16.2A/40.5A PPAK
Base Part Number: SISA88
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 40.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 16.2A/40.5A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISA88
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 40.5A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 12300 Stücke
Lieferzeit 21-28 Tag (e)
SIC642CD-T1-GE3 SIC642CD-T1-GE3 Vishay Siliconix Description: 55A VR POWER (DRMOS) PLUS 5V PWM
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 5.25 EUR
Vishay Siliconix Description: 55A VR POWER (DRMOS) PLUS 5V PWM
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SQR40020ER_GE3 SQR40020ER_GE3 sqr40020er.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO252 REV
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQR40020
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 100A TO252 REV
Base Part Number: SQR40020
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1995 Stücke
Lieferzeit 21-28 Tag (e)
SIHU2N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 2.9A TO251AA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.52 EUR
12+ 2.26 EUR
SIC830AED-T1-GE3 sic830.pdf Vishay Siliconix Description: IC PWR STAGE 80 A CURRENT MONITO
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIAA02DJ-T1-GE3 SIAA02DJ-T1-GE3 siaa02dj.pdf Vishay Siliconix Description: MOSFET N-CH 20V 22A/52A PPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIAA02
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 22A/52A PPAK
Base Part Number: SIAA02
Package / Case: PowerPAK® SC-70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 7611 Stücke
Lieferzeit 21-28 Tag (e)
SI3407DV-T1-BE3 SI3407DV-T1-BE3 Vishay Siliconix Description: MOSFET P-CH 20V 7.5A/8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 7.5A/8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
auf Bestellung 2980 Stücke
Lieferzeit 21-28 Tag (e)
SISS63DN-T1-GE3 SISS63DN-T1-GE3 siss63dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Base Part Number: SISS63
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 20V
auf Bestellung 48000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISS63
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 48863 Stücke
Lieferzeit 21-28 Tag (e)
SIHG125N60EF-GE3 Vishay Siliconix Description: MOSFET N-CH 600V 25A TO247AC
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHG125
Package / Case: TO-247-3
auf Bestellung 545 Stücke
Lieferzeit 21-28 Tag (e)
SIHB125N60EF-GE3 SIHB125N60EF-GE3 sihb125n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 25A D2PAK
Base Part Number: SIHB125
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 3050 Stücke
Lieferzeit 21-28 Tag (e)
SIHA125N60EF-GE3 Vishay Siliconix Description: MOSFET N-CH 600V 11A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1044 Stücke
Lieferzeit 21-28 Tag (e)
IRL630STRR IRL630STRR Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD20N10-66L-GE3 SUD20N10-66L-GE3 sud20n10-66l.pdf Vishay Siliconix Description: MOSFET N-CH 100V 16.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 605 Stücke - Preis und Lieferfrist anzeigen
SUD20N10-66L-BE3 SUD20N10-66L-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 16.9A DPAK
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA20EP-T1_GE3 SQJA20EP-T1_GE3 sqja20ep.pdf Vishay Siliconix Description: MOSFET N-CH 200V 22.5A PPAK SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Base Part Number: SQJA20
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1003 Stücke
Lieferzeit 21-28 Tag (e)
SIDR680DP-T1-GE3 SIDR680DP-T1-GE3 sidr680dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 32.8A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ570EP-T1_GE3 SQJ570EP-T1_GE3 sqj570ep.pdf Vishay Siliconix Description: MOSFET N/P-CH 100V POWERPAK SO8
Base Part Number: SQJ570
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N/P-CH 100V POWERPAK SO8
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
Base Part Number: SQJ570
Supplier Device Package: PowerPAK® SO-8 Dual
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 1729 Stücke
Lieferzeit 21-28 Tag (e)
SQS411ENW-T1_GE3 SQS411ENW-T1_GE3 sqs411enw.pdf Vishay Siliconix Description: MOSFET P-CH 40V PPAK 1212-8W
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3191pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS411
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 40V PPAK 1212-8W
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3191pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQS411
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
auf Bestellung 5621 Stücke
Lieferzeit 21-28 Tag (e)
SISA72ADN-T1-GE3 SISA72ADN-T1-GE3 sisa72adn.pdf Vishay Siliconix Description: MOSFET N-CH 40V 25.4A/94A PPAK
Base Part Number: SISA72
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 25.4A/94A PPAK
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISA72
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
auf Bestellung 3528 Stücke
Lieferzeit 21-28 Tag (e)
SQS850EN-T1_GE3 SQS850EN-T1_GE3 sqs850en.pdf Vishay Siliconix Description: MOSFET N-CH 60V 12A POWERPAK1212
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS850
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2021pF @ 30V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 12A POWERPAK1212
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2021pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SQS850
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
auf Bestellung 5242 Stücke
Lieferzeit 21-28 Tag (e)
SI2324DS-T1-BE3 SI2324DS-T1-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 2.3A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 sqs401enw.pdf Vishay Siliconix Description: MOSFET P-CH 40V 16A POWERPAK1212
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Base Part Number: SQS401
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4830 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
DG9408EDN-T1-GE4 DG9408EDN-T1-GE4 dg9408e.pdf Vishay Siliconix Description: IC ANLG SWITCH PREC 8CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 1
Base Part Number: DG9408
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Channel Capacitance (CS(off), CD(off)): 21pF, 211pF
Charge Injection: 29pC
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: IC ANLG SWITCH PREC 8CH 16QFN
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG9408
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 21pF, 211pF
Charge Injection: 29pC
Switch Time (Ton, Toff) (Max): 70ns, 44ns
auf Bestellung 4992 Stücke
Lieferzeit 21-28 Tag (e)
SIDR392DP-T1-GE3 SIDR392DP-T1-GE3 sidr392dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 82A/100A PPAK
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 82A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
auf Bestellung 1055 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.92 EUR
10+ 6.2 EUR
100+ 4.99 EUR
500+ 4.1 EUR
1000+ 3.51 EUR
SIHU6N80AE-GE3 sihu6n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 5A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5990 Stücke - Preis und Lieferfrist anzeigen
SUD50N04-8M8P-4BE3 SUD50N04-8M8P-4BE3 Vishay Siliconix Description: MOSFET N-CH 40V 14A/50A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 si4401fdy.pdf Vishay Siliconix Description: MOSFET P-CH 40V 9.9A/14A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4401
auf Bestellung 760 Stücke
Lieferzeit 21-28 Tag (e)
SIR178DP-T1-RE3 SIR178DP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 20V 100A/430A PPAK
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR178
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SIR150DP-T1-RE3 SIR150DP-T1-RE3 sir150dp.pdf Vishay Siliconix Description: MOSFET N-CH 45V 30.9A/110A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 45V 30.9A/110A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
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Lieferzeit 21-28 Tag (e)
12+ 2.21 EUR
14+ 1.98 EUR
SUD80460E-BE3 Vishay Siliconix Description: MOSFET N-CH 150V 42A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
SQJ409EP-T1_GE3 SQJ409EP-T1_GE3 sqj409ep.pdf Vishay Siliconix Description: MOSFET P-CH 40V 60A PPAK SO-8
Base Part Number: SQJ409
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: P-Channel
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISF04DN-T1-GE3 sisf04dn.pdf Vishay Siliconix Description: MOSFET DUAL N-CH 30V PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL N-CH 30V PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual) Common Drain
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
8+ 3.38 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.94 EUR
1000+ 1.54 EUR
IRF720PBF-BE3 IRF720PBF-BE3 sihf720.pdf Vishay Siliconix Description: MOSFET N-CH 400V 3.3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
8+ 3.28 EUR
10+ 2.92 EUR
100+ 2.28 EUR
500+ 1.88 EUR
SIRA28BDP-T1-GE3 sira28bdp.pdf
SIRA28BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/38A PPAK SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 582pF @ 15V
Base Part Number: SIRA28
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 3000 Stücke
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SIRA28BDP-T1-GE3 sira28bdp.pdf
SIRA28BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/38A PPAK SO8
Base Part Number: SIRA28
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 582pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIRA64DP-T1-GE3 sira64dp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA64
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SIRA64DP-T1-GE3 sira64dp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIRA64
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
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SIR124DP-T1-RE3 sir124dp.pdf
SIR124DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 40V
Base Part Number: SIR124
Package / Case: PowerPAK® SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
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SIR124DP-T1-RE3 sir124dp.pdf
SIR124DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Base Part Number: SIR124
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5290 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SUD08P06-155L-GE3 sud08p06-155l-ge3.pdf
SUD08P06-155L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.4A TO252
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SUD08
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10634 Stücke - Preis und Lieferfrist anzeigen
SUD08P06-155L-GE3 sud08p06-155l-ge3.pdf
SUD08P06-155L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.4A TO252
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SUD08
auf Bestellung 10634 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
IRFL214TRPBF-BE3
IRFL214TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 790MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 214 Stücke - Preis und Lieferfrist anzeigen
IRFL214TRPBF-BE3
IRFL214TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 790MA SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 214 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.56 EUR
10+ 3.19 EUR
100+ 2.49 EUR
IRL630PBF sihl630.pdf
IRL630PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRL630SPBF sihl630s.pdf
IRL630SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
auf Bestellung 106 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.53 EUR
10+ 5.85 EUR
100+ 4.7 EUR
IRL630STRRPBF sihl630s.pdf
IRL630STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL630 sihl630.pdf
IRL630
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 98 Stücke - Preis und Lieferfrist anzeigen
IRL630S
IRL630S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL630STRL IRF9Z34S_2.jpg
IRL630STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA17N80AE-GE3
SIHA17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.33 EUR
SIHP17N80AE-GE3
SIHP17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 986 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.15 EUR
10+ 6.42 EUR
100+ 5.16 EUR
500+ 4.24 EUR
SIHB17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG17N80AE-GE3
SIHG17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32430DN-T1-GE4 sip32430.pdf
SIP32430DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: 10-DFN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 3.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 99mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 10-VFDFN Exposed Pad
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3481EV-T1_GE3 sq3481ev.pdf
SQ3481EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP
Base Part Number: SQ3481
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3570 Stücke - Preis und Lieferfrist anzeigen
SQ3481EV-T1_GE3 sq3481ev.pdf
SQ3481EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP
Manufacturer: Vishay Siliconix
Base Part Number: SQ3481
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3570 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQ3457EV-T1_GE3 sq3457ev.pdf
SQ3457EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Base Part Number: SQ3457
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2111 Stücke - Preis und Lieferfrist anzeigen
SQJQ148E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ148
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 325W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD23N06-31L-T4-E3 sud23n06.pdf
SUD23N06-31L-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V TO252
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB00EP-T1_GE3 sqjb00ep.pdf
SQJB00EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB00
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7974 Stücke - Preis und Lieferfrist anzeigen
SQJB00EP-T1_GE3 sqjb00ep.pdf
SQJB00EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB00
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 7974 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIHD11N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 8A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB11N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 8A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG11N80AE-GE3
SIHG11N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 8A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC437DED-T1-GE3 sic437.pdf
SIC437DED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK POWERSAVE
Part Status: Active
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1997 Stücke - Preis und Lieferfrist anzeigen
SIC437DED-T1-GE3 sic437.pdf
SIC437DED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK POWERSAVE
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
auf Bestellung 1997 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.99 EUR
10+ 6.26 EUR
25+ 5.92 EUR
100+ 5.13 EUR
250+ 4.87 EUR
500+ 4.37 EUR
1000+ 4.1 EUR
SIC437BED-T1-GE3 sic437.pdf
SIC437BED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK POWERSAVE
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC438AED-T1-GE3 sic437.pdf
SIC438AED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK POWERSAVE
Packaging: Tape & Reel (TR)
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC437CED-T1-GE3 sic437.pdf
Hersteller: Vishay Siliconix
Description: 3 - 28V,12A MICROBUCK ULTRASONIC
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP38N60EF-GE3 sihp38n60ef.pdf
SIHP38N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 313W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3576pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: SIHP38
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR622DP-T1-GE3 sir622dp.pdf
SIR622DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 51.6A PPAK SO-8
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIR622
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1516pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 7.5V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51.6A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2398ES-T1_GE3 sq2398es.pdf
SQ2398ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2398
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 95598 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95598 Stücke - Preis und Lieferfrist anzeigen
SQ2398ES-T1_GE3 sq2398es.pdf
SQ2398ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2398
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 50V
Vgs (Max): ±20V
auf Bestellung 95598 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95598 Stücke - Preis und Lieferfrist anzeigen
SISA88DN-T1-GE3 SISA88DN_Rev.A_Oct02,2017_DS.pdf
SISA88DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.2A/40.5A PPAK
Base Part Number: SISA88
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 40.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12300 Stücke - Preis und Lieferfrist anzeigen
SISA88DN-T1-GE3 SISA88DN_Rev.A_Oct02,2017_DS.pdf
SISA88DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.2A/40.5A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISA88
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 40.5A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 12300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
SIC642CD-T1-GE3
SIC642CD-T1-GE3
Hersteller: Vishay Siliconix
Description: 55A VR POWER (DRMOS) PLUS 5V PWM
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3000+ 5.25 EUR
SIC642CD-T1-GE3
SIC642CD-T1-GE3
Hersteller: Vishay Siliconix
Description: 55A VR POWER (DRMOS) PLUS 5V PWM
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQR40020ER_GE3 sqr40020er.pdf
SQR40020ER_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252 REV
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQR40020
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1995 Stücke - Preis und Lieferfrist anzeigen
SQR40020ER_GE3 sqr40020er.pdf
SQR40020ER_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252 REV
Base Part Number: SQR40020
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1995 Stücke
Lieferzeit 21-28 Tag (e)
SIHU2N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.9A TO251AA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.52 EUR
12+ 2.26 EUR
SIC830AED-T1-GE3 sic830.pdf
Hersteller: Vishay Siliconix
Description: IC PWR STAGE 80 A CURRENT MONITO
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIAA02DJ-T1-GE3 siaa02dj.pdf
SIAA02DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 22A/52A PPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIAA02
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7611 Stücke - Preis und Lieferfrist anzeigen
SIAA02DJ-T1-GE3 siaa02dj.pdf
SIAA02DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 22A/52A PPAK
Base Part Number: SIAA02
Package / Case: PowerPAK® SC-70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 7611 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI3407DV-T1-BE3
SI3407DV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2980 Stücke - Preis und Lieferfrist anzeigen
SI3407DV-T1-BE3
SI3407DV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
auf Bestellung 2980 Stücke
Lieferzeit 21-28 Tag (e)
SISS63DN-T1-GE3 siss63dn.pdf
SISS63DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Base Part Number: SISS63
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 20V
auf Bestellung 48000 Stücke
Lieferzeit 21-28 Tag (e)
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SISS63DN-T1-GE3 siss63dn.pdf
SISS63DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISS63
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Drain to Source Voltage (Vdss): 20V
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SIHG125N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO247AC
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHG125
Package / Case: TO-247-3
auf Bestellung 545 Stücke
Lieferzeit 21-28 Tag (e)
SIHB125N60EF-GE3 sihb125n60ef.pdf
SIHB125N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A D2PAK
Base Part Number: SIHB125
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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SIHA125N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1044 Stücke
Lieferzeit 21-28 Tag (e)
IRL630STRR
IRL630STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD20N10-66L-GE3 sud20n10-66l.pdf
SUD20N10-66L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUD20N10-66L-BE3
SUD20N10-66L-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A DPAK
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA20EP-T1_GE3 sqja20ep.pdf
SQJA20EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 22.5A PPAK SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Base Part Number: SQJA20
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1003 Stücke
Lieferzeit 21-28 Tag (e)
SIDR680DP-T1-GE3 sidr680dp.pdf
SIDR680DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 32.8A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ570EP-T1_GE3 sqj570ep.pdf
SQJ570EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 100V POWERPAK SO8
Base Part Number: SQJ570
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1729 Stücke - Preis und Lieferfrist anzeigen
SQJ570EP-T1_GE3 sqj570ep.pdf
SQJ570EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 100V POWERPAK SO8
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
Base Part Number: SQJ570
Supplier Device Package: PowerPAK® SO-8 Dual
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 1729 Stücke
Lieferzeit 21-28 Tag (e)
SQS411ENW-T1_GE3 sqs411enw.pdf
SQS411ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V PPAK 1212-8W
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3191pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS411
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SQS411ENW-T1_GE3 sqs411enw.pdf
SQS411ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V PPAK 1212-8W
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3191pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQS411
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
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SISA72ADN-T1-GE3 sisa72adn.pdf
SISA72ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25.4A/94A PPAK
Base Part Number: SISA72
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
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SISA72ADN-T1-GE3 sisa72adn.pdf
SISA72ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25.4A/94A PPAK
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISA72
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
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SQS850EN-T1_GE3 sqs850en.pdf
SQS850EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A POWERPAK1212
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS850
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2021pF @ 30V
Vgs (Max): ±20V
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SQS850EN-T1_GE3 sqs850en.pdf
SQS850EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A POWERPAK1212
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2021pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SQS850
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
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SI2324DS-T1-BE3
SI2324DS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQS401ENW-T1_GE3 sqs401enw.pdf
SQS401ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A POWERPAK1212
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Base Part Number: SQS401
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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DG9408EDN-T1-GE4 dg9408e.pdf
DG9408EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH PREC 8CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 1
Base Part Number: DG9408
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Channel Capacitance (CS(off), CD(off)): 21pF, 211pF
Charge Injection: 29pC
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4992 Stücke - Preis und Lieferfrist anzeigen
DG9408EDN-T1-GE4 dg9408e.pdf
DG9408EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH PREC 8CH 16QFN
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG9408
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 21pF, 211pF
Charge Injection: 29pC
Switch Time (Ton, Toff) (Max): 70ns, 44ns
auf Bestellung 4992 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SIDR392DP-T1-GE3 sidr392dp.pdf
SIDR392DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 82A/100A PPAK
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1055 Stücke - Preis und Lieferfrist anzeigen
SIDR392DP-T1-GE3 sidr392dp.pdf
SIDR392DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 82A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
auf Bestellung 1055 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.92 EUR
10+ 6.2 EUR
100+ 4.99 EUR
500+ 4.1 EUR
1000+ 3.51 EUR
SIHU6N80AE-GE3 sihu6n80ae.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5990 Stücke - Preis und Lieferfrist anzeigen
SUD50N04-8M8P-4BE3
SUD50N04-8M8P-4BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 14A/50A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4401FDY-T1-GE3 si4401fdy.pdf
SI4401FDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 9.9A/14A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4401
auf Bestellung 760 Stücke
Lieferzeit 21-28 Tag (e)
SIR178DP-T1-RE3
SIR178DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR178
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 3112 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR150DP-T1-RE3 sir150dp.pdf
SIR150DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 30.9A/110A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
SIR150DP-T1-RE3 sir150dp.pdf
SIR150DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 30.9A/110A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.21 EUR
14+ 1.98 EUR
SUD80460E-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 42A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
SQJ409EP-T1_GE3 sqj409ep.pdf
SQJ409EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 60A PPAK SO-8
Base Part Number: SQJ409
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: P-Channel
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISF04DN-T1-GE3 sisf04dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2374 Stücke - Preis und Lieferfrist anzeigen
SISF04DN-T1-GE3 sisf04dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual) Common Drain
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
auf Bestellung 2374 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.38 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.94 EUR
1000+ 1.54 EUR
IRF720PBF-BE3 sihf720.pdf
IRF720PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
auf Bestellung 868 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.28 EUR
10+ 2.92 EUR
100+ 2.28 EUR
500+ 1.88 EUR
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