Die Produkte vishay siliconix

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SISS32LDN-T1-GE3 siss32ldn.pdf Vishay Siliconix Description: MOSFET N-CH 80V 17.4A/63A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 80V POWERPAK 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SISS32
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI3447CDV-T1-E3 SI3447CDV-T1-E3 si3447cd.pdf Vishay Siliconix Description: MOSFET P-CH 12V 7.8A 6TSOP
Base Part Number: SI3447
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
Vgs (Max): ±8V
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3001 Stücke - Preis und Lieferfrist anzeigen
DG407DN-T1-E3 DG407DN-T1-E3 dg406.pdf Vishay Siliconix Description: IC MULTIPLEXER 16X1 28PLCC
Base Part Number: DG407
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
DG211BDY-T1-E3 DG211BDY-T1-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG211
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1052 Stücke
Lieferzeit 21-28 Tag (e)
DG211BDQ-T1-E3 DG211BDQ-T1-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG211
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
auf Bestellung 234 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 128 Stücke - Preis und Lieferfrist anzeigen
SIZF906ADT-T1-GE3 SIZF906ADT-T1-GE3 sizf906adt.pdf Vishay Siliconix Description: MOSFET DUAL N-CHAN 30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
FET Type: 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL N-CHAN 30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
FET Type: 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 15 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET DUAL N-CHAN 30V
Base Part Number: SIZF90
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
FET Type: 2 N-Channel (Dual), Schottky
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
SIZF918DT-T1-GE3 sizf918dt.pdf Vishay Siliconix Description: MOSFET DUAL N-CH 30V POWERPAIR 6
Base Part Number: SIZF91
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF, 2650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC, 56nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR696DP-T1-GE3 SIR696DP-T1-GE3 sir696dp.pdf Vishay Siliconix Description: MOSFET N-CH 125V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 125V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR696
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 125V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 125V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR696
auf Bestellung 3098 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 125V 60A POWERPAKSO
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 125V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Base Part Number: SIR696
auf Bestellung 5856 Stücke
Lieferzeit 21-28 Tag (e)
SI4630DY-T1-E3 SI4630DY-T1-E3 73685.pdf Vishay Siliconix Description: MOSFET N-CH 25V 40A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4630
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 11109 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 276629 Stücke - Preis und Lieferfrist anzeigen
SIRC06DP-T1-GE3 SIRC06DP-T1-GE3 sirc06dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRC06
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRC06
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SISC06DN-T1-GE3 SISC06DN-T1-GE3 sisc06dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 27.6A/40A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISC06
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 27.6A/40A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISC06
auf Bestellung 2415 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISC06
auf Bestellung 5990 Stücke
Lieferzeit 21-28 Tag (e)
SIZ250DT-T1-GE3 SIZ250DT-T1-GE3 siz250dt.pdf Vishay Siliconix Description: MOSFET DUAL N-CH 60-V POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL N-CH 60-V POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
auf Bestellung 1882 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET DUAL N-CH 60-V POWERPAIR
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
DG469EQ-T1-E3 DG469EQ-T1-E3 dg469.pdf Vishay Siliconix Description: IC SWITCH SNGL SPDT 8MSOP
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -63dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Charge Injection: 58pC
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Base Part Number: DG469
Voltage - Supply, Single (V+): 12V
Number of Circuits: 1
On-State Resistance (Max): 6Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
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SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 si2309cd.pdf Vishay Siliconix Description: MOSFET P-CH 60V 1.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2309
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 30V
Vgs (Max): ±20V
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SQS405EN-T1_GE3 SQS405EN-T1_GE3 sqs405en.pdf Vishay Siliconix Description: MOSFET P-CH 12V 16A POWERPAK1212
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
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SQS405ENW-T1_GE3 SQS405ENW-T1_GE3 sqs405en.pdf Vishay Siliconix Description: MOSFET P-CH 12V 16A POWERPAK1212
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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SISH617DN-T1-GE3 SISH617DN-T1-GE3 sish617dn.pdf Vishay Siliconix Description: MOSFET P-CHAN 30V POWERPAK 1212-
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SISH61
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SISS12DN-T1-GE3 SISS12DN-T1-GE3 siss12dn.pdf Vishay Siliconix Description: MOSFET N-CHAN 40V POWERPAK 1212-
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SISS12
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 40V
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SQA403EJ-T1_GE3 SQA403EJ-T1_GE3 sqa403ej.pdf Vishay Siliconix Description: MOSFET P-CHAN 30V
Base Part Number: SQA403
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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SISS67DN-T1-GE3 SISS67DN-T1-GE3 siss67dn.pdf Vishay Siliconix Description: MOSFET P-CHAN 30V POWERPAK 1212-
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
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SQA405EJ-T1_GE3 SQA405EJ-T1_GE3 sqa405ej.pdf Vishay Siliconix Description: MOSFET P-CHAN 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA405
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SIR862DP-T1-GE3 SIR862DP-T1-GE3 sir862dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 50A PPAK SO-8
Base Part Number: SIR862
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Part Status: Active
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SI1416EDH-T1-GE3 SI1416EDH-T1-GE3 si1416ed.pdf Vishay Siliconix Description: MOSFET N-CH 30V 3.9A SOT-363
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1416
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
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DG441LEDQ-T1-GE3 DG441LEDQ-T1-GE3 dg441le.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -114dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 6.6pC
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 26Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG441
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
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DG441DY-E3 DG441DY-E3 dg441.pdf техническая информация Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG441LEDY-T1-GE3 DG441LEDY-T1-GE3 dg441le.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG441
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -114dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 6.6pC
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 26Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG441DY-T1-E3 DG441DY-T1-E3 dg441.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Charge Injection: -1pC
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Base Part Number: DG441
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI1016X-T1-GE3 SI1016X-T1-GE3 si1016x.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1016
Supplier Device Package: SC-89-6
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SI1411DH-T1-GE3 SI1411DH-T1-GE3 si1411dh.pdf Vishay Siliconix Description: MOSFET P-CH 150V 420MA SC70
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1411
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Vgs (Max): ±20V
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SI1967DH-T1-E3 SI1967DH-T1-E3 si1967dh.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 1.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1967
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
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SIHP105N60EF-GE3 SIHP105N60EF-GE3 sihp105n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 29A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP105
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SIJ438DP-T1-GE3 SIJ438DP-T1-GE3 sij438dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 80A PPAK SO-8L
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
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SUM110N10-09-E3 SUM110N10-09-E3 sum110n1.pdf Vishay Siliconix Description: MOSFET N-CH 100V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 110A D2PAK
Base Part Number: SUM110
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3616 Stücke
Lieferzeit 21-28 Tag (e)
SQJ457EP-T1_GE3 SQJ457EP-T1_GE3 sqj457ep.pdf Vishay Siliconix Description: MOSFET P-CH 60V 36A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJ457
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 60V 36A PPAK SO-8
Base Part Number: SQJ457
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 60V 36A POWERPAKSO-8
Part Status: Active
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ457
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
auf Bestellung 26284 Stücke
Lieferzeit 21-28 Tag (e)
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 sqj423ep.pdf Vishay Siliconix Description: MOSFET P-CH 40V 55A PPAK SO-8
Base Part Number: SQJ423
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 40V 55A POWERPAKSO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 40V
Base Part Number: SQJ423
Package / Case: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5609 Stücke
Lieferzeit 21-28 Tag (e)
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 sqj974ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 100V POWERPAK SO8
Base Part Number: SQJ974
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 11254 Stücke
Lieferzeit 21-28 Tag (e)
SQJ940EP-T1_GE3 SQJ940EP-T1_GE3 sqj940ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ940
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W, 43W
Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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Lieferzeit 21-28 Tag (e)
SIA471DJ-T1-GE3 SIA471DJ-T1-GE3 sia471dj.pdf Vishay Siliconix Description: MOSFET P-CH 30V PPAK SC-70-6L
Base Part Number: SIA471
Package / Case: PowerPAK® SC-70-6
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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Lieferzeit 21-28 Tag (e)
auf Bestellung 6200 Stücke - Preis und Lieferfrist anzeigen
SI5504BDC-T1-GE3 SI5504BDC-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 30V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5504
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W, 3.1W
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Lieferzeit 21-28 Tag (e)
DG468DV-T1-E3 DG468DV-T1-E3 dg467.pdf Vishay Siliconix Description: IC SWITCH SPST 6TSOP
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Charge Injection: 21pC
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Voltage - Supply, Single (V+): 7V ~ 36V
Base Part Number: DG468
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 19438 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 342 Stücke - Preis und Lieferfrist anzeigen
SUD25N15-52-E3 SUD25N15-52-E3 sud25n15.pdf Vishay Siliconix Description: MOSFET N-CH 150V 25A TO252
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SUD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9170 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 865 Stücke - Preis und Lieferfrist anzeigen
SI5513CDC-T1-E3 SI5513CDC-T1-E3 si5513cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Base Part Number: SI5513
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SQM85N15-19_GE3 SQM85N15-19_GE3 sqm85n15-19.pdf Vishay Siliconix Description: MOSFET N-CH 150V 85A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6285pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM85N
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET N-CH 150V 85A TO263
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6285pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM85N
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Lieferzeit 21-28 Tag (e)
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SIP32432DR3-T1GE3 SIP32432DR3-T1GE3 sip32431.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
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Lieferzeit 21-28 Tag (e)
15+ 1.77 EUR
17+ 1.56 EUR
25+ 1.47 EUR
100+ 1.2 EUR
250+ 1.11 EUR
500+ 0.95 EUR
Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Base Part Number: SIP324
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 3327 Stücke
Lieferzeit 21-28 Tag (e)
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 sia449dj.pdf Vishay Siliconix Description: MOSFET P-CH 30V 12A SC70-6
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA449
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SI7994DP-T1-GE3 SI7994DP-T1-GE3 si7994dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 60A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7994
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 46W
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A
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SI7141DP-T1-GE3 SI7141DP-T1-GE3 si7141dp.pdf Vishay Siliconix Description: MOSFET P-CH 20V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI7141
FET Type: P-Channel
Part Status: Active
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 10V
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
SI7114ADN-T1-GE3 SI7114ADN-T1-GE3 si7114ad.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7114
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18533 Stücke
Lieferzeit 21-28 Tag (e)
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SI7234DP-T1-GE3 SI7234DP-T1-GE3 si7234dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 46W
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A
Drain to Source Voltage (Vdss): 12V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Base Part Number: SI7234
Supplier Device Package: PowerPAK® SO-8 Dual
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8 Dual
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Lieferzeit 21-28 Tag (e)
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IRFR214TRPBF IRFR214TRPBF 91269.pdf Vishay Siliconix Description: MOSFET N-CH 250V 2.2A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFR214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
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IRFR214TRLPBF IRFR214TRLPBF 91269.pdf Vishay Siliconix Description: MOSFET N-CH 250V 2.2A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFR214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
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SIA414DJ-T1-GE3 SIA414DJ-T1-GE3 sia414dj.pdf Vishay Siliconix Description: MOSFET N-CH 8V 12A SC70-6
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
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SI2342DS-T1-GE3 SI2342DS-T1-GE3 si2342ds.pdf Vishay Siliconix Description: MOSFET N-CH 8V 6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
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SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 si6562cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 6.7A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W, 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-TSSOP
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SI1553CDL-T1-GE3 SI1553CDL-T1-GE3 si1553cdl.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC70-6
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
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SIC478EVB-E sic47x.pdf Vishay Siliconix Description: SIC478 EVALUATION BOARD
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.8V ~ 24V
Current - Output: 5A
Voltage - Input: 4.5V ~ 55V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC478
Base Part Number: SIC478
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC477EVB-D sic47x.pdf Vishay Siliconix Description: SIC477 EVALUATION BOARD
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.8V ~ 24V
Current - Output: 8A
Voltage - Input: 4.5V ~ 55V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC477
Base Part Number: SIC477
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC476EVB-D sic47x.pdf Vishay Siliconix Description: SIC476 EVALUATION BOARD
Utilized IC / Part: SIC476
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 12A
Voltage - Input: 4.5V ~ 55V
Voltage - Output: 0.8V ~ 24V
Packaging: Box
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
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SIC479EVB-E sic47x.pdf Vishay Siliconix Description: SIC479 EVALUATION BOARD
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.8V ~ 24V
Current - Output: 3A
Voltage - Input: 4.5V ~ 55V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC479
Base Part Number: SIC479
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2715EDL-T1-GE3 Vishay Siliconix Description: IC ANALOG SWITCH SC70-5
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2716EDL-T1-GE3 DG2716EDL-T1-GE3 Vishay Siliconix Description: IC ANALOG SWITCH SC70-5
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-70-5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3457CDV-T1-E3 SI3457CDV-T1-E3 si3457cdv.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.1A 6-TSOP
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 si2371eds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.8A SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Base Part Number: SI2371
Package / Case: TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
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SI7111EDN-T1-GE3 SI7111EDN-T1-GE3 si7111edn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A POWERPAK1212
Base Part Number: SI7111
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 2.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIR108DP-T1-RE3 SIR108DP-T1-RE3 sir108dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 12.4A/45A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR108
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 12.4A/45A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR108
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Lieferzeit 21-28 Tag (e)
SIR870ADP-T1-GE3 SIR870ADP-T1-GE3 sir870adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Base Part Number: SIR870
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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Lieferzeit 21-28 Tag (e)
SQD19P06-60L_GE3 SQD19P06-60L_GE3 sqd19p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 20A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQD19P
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
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SIS184DN-T1-GE3 SIS184DN-T1-GE3 sis184dn.pdf Vishay Siliconix Description: MOSFET N-CHAN 60V POWERPAK 1212-
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS184
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SQD19P06-60L_T4GE3 SQD19P06-60L_T4GE3 sqd19p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 20A TO252AA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SQD19P
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
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SIP32103DB-T1-GE1 SIP32103DB-T1-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Base Part Number: SIP321
Package / Case: 12-UFBGA, CSPBGA
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIP32102DB-T1-GE1 SIP32102DB-T1-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Base Part Number: SIP321
Ratio - Input:Output: 1:1
Number of Outputs: 1
Package / Case: 12-UFBGA, CSPBGA
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH21N65EF-T1-GE3 SIHH21N65EF-T1-GE3 sihh21n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 19.8A POWERPAK
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±30V
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2396pF @ 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
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SIHH21N65E-T1-GE3 SIHH21N65E-T1-GE3 sihh21n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG508BEY-T1-E3 DG508BEY-T1-E3 dg508b.pdf Vishay Siliconix Description: IC MUX 8CHAN PREC 16-SOIC
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
Base Part Number: DG508
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 380Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
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DG508BEN-T1-GE4 DG508BEN-T1-GE4 dg508b.pdf Vishay Siliconix Description: IC MUX ANALOG SINGLE 8CH 16QFN
Multiplexer/Demultiplexer Circuit: 8:1
Base Part Number: DG508
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG212BDY-T1-E3 DG212BDY-T1-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG212
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
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SIR186DP-T1-RE3 SIR186DP-T1-RE3 sir186dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR186
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8
Base Part Number: SIR186
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SISS32LDN-T1-GE3 siss32ldn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SISS32LDN-T1-GE3 siss32ldn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V POWERPAK 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SISS32
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
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SI3447CDV-T1-E3 si3447cd.pdf
SI3447CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.8A 6TSOP
Base Part Number: SI3447
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
Vgs (Max): ±8V
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DG407DN-T1-E3 dg406.pdf
DG407DN-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28PLCC
Base Part Number: DG407
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
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DG211BDY-T1-E3 70040.pdf
DG211BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG211
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG211BDQ-T1-E3 70040.pdf
DG211BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG211
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
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SIZF906ADT-T1-GE3 sizf906adt.pdf
SIZF906ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
FET Type: 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
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SIZF906ADT-T1-GE3 sizf906adt.pdf
SIZF906ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
FET Type: 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
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SIZF906ADT-T1-GE3 sizf906adt.pdf
SIZF906ADT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V
Base Part Number: SIZF90
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
FET Type: 2 N-Channel (Dual), Schottky
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SIZF918DT-T1-GE3 sizf918dt.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V POWERPAIR 6
Base Part Number: SIZF91
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF, 2650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC, 56nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR696DP-T1-GE3 sir696dp.pdf
SIR696DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 125V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR696
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR696DP-T1-GE3 sir696dp.pdf
SIR696DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 125V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR696
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SIR696DP-T1-GE3 sir696dp.pdf
SIR696DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 60A POWERPAKSO
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 125V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Base Part Number: SIR696
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SI4630DY-T1-E3 73685.pdf
SI4630DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4630
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SIRC06DP-T1-GE3 sirc06dp.pdf
SIRC06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRC06
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SIRC06DP-T1-GE3 sirc06dp.pdf
SIRC06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRC06
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SISC06DN-T1-GE3 sisc06dn.pdf
SISC06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 27.6A/40A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISC06
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SISC06DN-T1-GE3 sisc06dn.pdf
SISC06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 27.6A/40A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISC06
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SISC06DN-T1-GE3 sisc06dn.pdf
SISC06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2455pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 46.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SISC06
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SIZ250DT-T1-GE3 siz250dt.pdf
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 60-V POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIZ250DT-T1-GE3 siz250dt.pdf
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 60-V POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
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SIZ250DT-T1-GE3 siz250dt.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 60-V POWERPAIR
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
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DG469EQ-T1-E3 dg469.pdf
DG469EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SNGL SPDT 8MSOP
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -63dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Charge Injection: 58pC
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Base Part Number: DG469
Voltage - Supply, Single (V+): 12V
Number of Circuits: 1
On-State Resistance (Max): 6Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
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SI2309CDS-T1-GE3 si2309cd.pdf
SI2309CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2309
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 30V
Vgs (Max): ±20V
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SQS405EN-T1_GE3 sqs405en.pdf
SQS405EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
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SQS405ENW-T1_GE3 sqs405en.pdf
SQS405ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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SISH617DN-T1-GE3 sish617dn.pdf
SISH617DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V POWERPAK 1212-
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SISH61
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SISS12DN-T1-GE3 siss12dn.pdf
SISS12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V POWERPAK 1212-
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SISS12
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 40V
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SQA403EJ-T1_GE3 sqa403ej.pdf
SQA403EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V
Base Part Number: SQA403
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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SISS67DN-T1-GE3 siss67dn.pdf
SISS67DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V POWERPAK 1212-
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
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SQA405EJ-T1_GE3 sqa405ej.pdf
SQA405EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1815pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA405
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SIR862DP-T1-GE3 sir862dp.pdf
SIR862DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
Base Part Number: SIR862
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Part Status: Active
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SI1416EDH-T1-GE3 si1416ed.pdf
SI1416EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.9A SOT-363
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1416
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
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DG441LEDQ-T1-GE3 dg441le.pdf
DG441LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -114dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 6.6pC
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 26Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG441
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
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DG441DY-E3 техническая информация dg441.pdf
DG441DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG441LEDY-T1-GE3 dg441le.pdf
DG441LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG441
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -114dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 6.6pC
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 26Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG441DY-T1-E3 dg441.pdf
DG441DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Charge Injection: -1pC
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Base Part Number: DG441
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SI1016X-T1-GE3 si1016x.pdf
SI1016X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1016
Supplier Device Package: SC-89-6
auf Bestellung 65508 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5422 Stücke - Preis und Lieferfrist anzeigen
SI1411DH-T1-GE3 si1411dh.pdf
SI1411DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 420MA SC70
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1411
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Vgs (Max): ±20V
auf Bestellung 9037 Stücke
Lieferzeit 21-28 Tag (e)
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SI1967DH-T1-E3 si1967dh.pdf
SI1967DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1967
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
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SIHP105N60EF-GE3 sihp105n60ef.pdf
SIHP105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP105
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJ438DP-T1-GE3 sij438dp.pdf
SIJ438DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80A PPAK SO-8L
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
auf Bestellung 8381 Stücke
Lieferzeit 21-28 Tag (e)
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SUM110N10-09-E3 sum110n1.pdf
SUM110N10-09-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3616 Stücke - Preis und Lieferfrist anzeigen
SUM110N10-09-E3 sum110n1.pdf
SUM110N10-09-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 110A D2PAK
Base Part Number: SUM110
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3616 Stücke
Lieferzeit 21-28 Tag (e)
SQJ457EP-T1_GE3 sqj457ep.pdf
SQJ457EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 36A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJ457
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
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SQJ457EP-T1_GE3 sqj457ep.pdf
SQJ457EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 36A PPAK SO-8
Base Part Number: SQJ457
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
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SQJ457EP-T1_GE3 sqj457ep.pdf
SQJ457EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 36A POWERPAKSO-8
Part Status: Active
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ457
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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SQJ423EP-T1_GE3 sqj423ep.pdf
SQJ423EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Base Part Number: SQJ423
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5609 Stücke - Preis und Lieferfrist anzeigen
SQJ423EP-T1_GE3 sqj423ep.pdf
SQJ423EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 55A POWERPAKSO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 40V
Base Part Number: SQJ423
Package / Case: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5609 Stücke
Lieferzeit 21-28 Tag (e)
SQJ974EP-T1_GE3 sqj974ep.pdf
SQJ974EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Base Part Number: SQJ974
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 11254 Stücke
Lieferzeit 21-28 Tag (e)
SQJ940EP-T1_GE3 sqj940ep.pdf
SQJ940EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ940
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W, 43W
Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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Lieferzeit 21-28 Tag (e)
SIA471DJ-T1-GE3 sia471dj.pdf
SIA471DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V PPAK SC-70-6L
Base Part Number: SIA471
Package / Case: PowerPAK® SC-70-6
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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SI5504BDC-T1-GE3
SI5504BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5504
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W, 3.1W
auf Bestellung 20272 Stücke
Lieferzeit 21-28 Tag (e)
DG468DV-T1-E3 dg467.pdf
DG468DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 6TSOP
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Charge Injection: 21pC
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Voltage - Supply, Single (V+): 7V ~ 36V
Base Part Number: DG468
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 19438 Stücke
Lieferzeit 21-28 Tag (e)
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SUD25N15-52-E3 sud25n15.pdf
SUD25N15-52-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SUD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI5513CDC-T1-E3 si5513cd.pdf
SI5513CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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SI5513CDC-T1-E3 si5513cd.pdf
SI5513CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Base Part Number: SI5513
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SQM85N15-19_GE3 sqm85n15-19.pdf
SQM85N15-19_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 85A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6285pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM85N
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SQM85N15-19_GE3 sqm85n15-19.pdf
SQM85N15-19_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 85A TO263
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6285pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM85N
auf Bestellung 1468 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2268 Stücke - Preis und Lieferfrist anzeigen
SIP32432DR3-T1GE3 sip32431.pdf
SIP32432DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3991 Stücke - Preis und Lieferfrist anzeigen
SIP32432DR3-T1GE3 sip32431.pdf
SIP32432DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
auf Bestellung 664 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3327 Stücke - Preis und Lieferfrist anzeigen
15+ 1.77 EUR
17+ 1.56 EUR
25+ 1.47 EUR
100+ 1.2 EUR
250+ 1.11 EUR
500+ 0.95 EUR
SIP32432DR3-T1GE3 sip32431.pdf
SIP32432DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Base Part Number: SIP324
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 3327 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 664 Stücke - Preis und Lieferfrist anzeigen
SIA449DJ-T1-GE3 sia449dj.pdf
SIA449DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A SC70-6
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA449
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2223 Stücke - Preis und Lieferfrist anzeigen
SI7994DP-T1-GE3 si7994dp.pdf
SI7994DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7994
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 46W
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A
auf Bestellung 5965 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14291 Stücke - Preis und Lieferfrist anzeigen
SI7141DP-T1-GE3 si7141dp.pdf
SI7141DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI7141
FET Type: P-Channel
Part Status: Active
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 10V
Vgs (Max): ±20V
auf Bestellung 1729 Stücke
Lieferzeit 21-28 Tag (e)
SI7114ADN-T1-GE3 si7114ad.pdf
SI7114ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7114
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18533 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2288 Stücke - Preis und Lieferfrist anzeigen
SI7234DP-T1-GE3 si7234dp.pdf
SI7234DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 46W
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A
Drain to Source Voltage (Vdss): 12V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Base Part Number: SI7234
Supplier Device Package: PowerPAK® SO-8 Dual
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8 Dual
auf Bestellung 7834 Stücke
Lieferzeit 21-28 Tag (e)
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IRFR214TRPBF 91269.pdf
IRFR214TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFR214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
auf Bestellung 3341 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1839 Stücke - Preis und Lieferfrist anzeigen
IRFR214TRLPBF 91269.pdf
IRFR214TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFR214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
auf Bestellung 2959 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2659 Stücke - Preis und Lieferfrist anzeigen
SIA414DJ-T1-GE3 sia414dj.pdf
SIA414DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A SC70-6
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 8625 Stücke
Lieferzeit 21-28 Tag (e)
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SI2342DS-T1-GE3 si2342ds.pdf
SI2342DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 16785 Stücke
Lieferzeit 21-28 Tag (e)
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SI6562CDQ-T1-GE3 si6562cd.pdf
SI6562CDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W, 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-TSSOP
auf Bestellung 92 Stücke
Lieferzeit 21-28 Tag (e)
SI1553CDL-T1-GE3 si1553cdl.pdf
SI1553CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 11182 Stücke
Lieferzeit 21-28 Tag (e)
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SIC478EVB-E sic47x.pdf
Hersteller: Vishay Siliconix
Description: SIC478 EVALUATION BOARD
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.8V ~ 24V
Current - Output: 5A
Voltage - Input: 4.5V ~ 55V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC478
Base Part Number: SIC478
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC477EVB-D sic47x.pdf
Hersteller: Vishay Siliconix
Description: SIC477 EVALUATION BOARD
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.8V ~ 24V
Current - Output: 8A
Voltage - Input: 4.5V ~ 55V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC477
Base Part Number: SIC477
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC476EVB-D sic47x.pdf
Hersteller: Vishay Siliconix
Description: SIC476 EVALUATION BOARD
Utilized IC / Part: SIC476
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 12A
Voltage - Input: 4.5V ~ 55V
Voltage - Output: 0.8V ~ 24V
Packaging: Box
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
1+ 87.15 EUR
SIC479EVB-E sic47x.pdf
Hersteller: Vishay Siliconix
Description: SIC479 EVALUATION BOARD
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Voltage - Output: 0.8V ~ 24V
Current - Output: 3A
Voltage - Input: 4.5V ~ 55V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC479
Base Part Number: SIC479
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2715EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70-5
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2716EDL-T1-GE3
DG2716EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70-5
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-70-5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3457CDV-T1-E3 si3457cdv.pdf
SI3457CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.1A 6-TSOP
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 8888 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14764 Stücke - Preis und Lieferfrist anzeigen
SI2371EDS-T1-GE3 si2371eds.pdf
SI2371EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.8A SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Base Part Number: SI2371
Package / Case: TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 22995 Stücke
Lieferzeit 21-28 Tag (e)
SI7111EDN-T1-GE3 si7111edn.pdf
SI7111EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A POWERPAK1212
Base Part Number: SI7111
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 2.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5677 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3868 Stücke - Preis und Lieferfrist anzeigen
SIR108DP-T1-RE3 sir108dp.pdf
SIR108DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR108
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR108DP-T1-RE3 sir108dp.pdf
SIR108DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR108
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SIR870ADP-T1-GE3 sir870adp.pdf
SIR870ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Base Part Number: SIR870
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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SQD19P06-60L_GE3 sqd19p06.pdf
SQD19P06-60L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQD19P
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
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SIS184DN-T1-GE3 sis184dn.pdf
SIS184DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 60V POWERPAK 1212-
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS184
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SQD19P06-60L_T4GE3 sqd19p06.pdf
SQD19P06-60L_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252AA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SQD19P
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
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SIP32103DB-T1-GE1 sip32101.pdf
SIP32103DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Base Part Number: SIP321
Package / Case: 12-UFBGA, CSPBGA
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIP32102DB-T1-GE1 sip32101.pdf
SIP32102DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Base Part Number: SIP321
Ratio - Input:Output: 1:1
Number of Outputs: 1
Package / Case: 12-UFBGA, CSPBGA
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
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SIHH21N65EF-T1-GE3 sihh21n65ef.pdf
SIHH21N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 19.8A POWERPAK
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±30V
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2396pF @ 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
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SIHH21N65E-T1-GE3 sihh21n65e.pdf
SIHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Vgs (Max): ±30V
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DG508BEY-T1-E3 dg508b.pdf
DG508BEY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8CHAN PREC 16-SOIC
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
Base Part Number: DG508
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 380Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
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DG508BEN-T1-GE4 dg508b.pdf
DG508BEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX ANALOG SINGLE 8CH 16QFN
Multiplexer/Demultiplexer Circuit: 8:1
Base Part Number: DG508
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG212BDY-T1-E3 70040.pdf
DG212BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG212
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR186DP-T1-RE3 sir186dp.pdf
SIR186DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR186
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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SIR186DP-T1-RE3 sir186dp.pdf
SIR186DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Base Part Number: SIR186
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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