Die Produkte vishay siliconix

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IRFR420ATRPBF IRFR420ATRPBF sihfr420.pdf Vishay Siliconix Description: MOSFET N-CH 500V 3.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3077 Stücke
Lieferzeit 21-28 Tag (e)
IRFR420TRLPBF IRFR420TRLPBF sihfr420.pdf Vishay Siliconix Description: MOSFET N-CH 500V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Technology: MOSFET (Metal Oxide)
Part Status: Active
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 476 Stücke
Lieferzeit 21-28 Tag (e)
SIHFR420A-GE3 SIHFR420A-GE3 sihfr420.pdf Vishay Siliconix Description: MOSFET N-CH 500V 3.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SiHFR420
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA60DP-T1-GE3 SIRA60DP-T1-GE3 sira60dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 100A POWERPAKSO
Base Part Number: SIRA60
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 100A POWERPAKSO
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Base Part Number: SIRA60
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
auf Bestellung 5633 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 100A POWERPAKSO
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIRA60
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 810 Stücke
Lieferzeit 21-28 Tag (e)
SIRA60DP-T1-RE3 sira60dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 100A POWERPAKSO
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIRA60
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P06-15-GE3 SUD50P06-15-GE3 sud50p06-15.pdf Vishay Siliconix Description: Description: MOSFET P-CH 60V 50A TO-252
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP8N50D-GE3 SIHP8N50D-GE3 sihp8n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 296 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.56 EUR
10+ 3.19 EUR
100+ 2.48 EUR
SIHP690N60E-GE3 SIHP690N60E-GE3 sihp690n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.4A TO220AB
Base Part Number: SIHP690
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 1050 Stücke
Lieferzeit 21-28 Tag (e)
SIHF8N50D-E3 SIHF8N50D-E3 sihfp8n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8.7A TO220
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 33W (Tc)
auf Bestellung 933 Stücke
Lieferzeit 21-28 Tag (e)
SIHF530-GE3 SIHF530-GE3 91019.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A TO220AB
Base Part Number: SIHF530
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFU9220-GE3 sihfr922.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.6A TO251AA
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SiHFU9220
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF520STRL-GE3 SIHF520STRL-GE3 sihf520s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF520
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF520STRR-GE3 SIHF520STRR-GE3 sihf520s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF520
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA533EDJ-T1-GE3 SIA533EDJ-T1-GE3 sia533edj.pdf Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC70-6
FET Type: N and P-Channel
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA533
auf Bestellung 40375 Stücke
Lieferzeit 21-28 Tag (e)
SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 sia519edj.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4.5A SC70-6
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA519
Supplier Device Package: PowerPAK® SC-70-6 Dual
auf Bestellung 35085 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1030 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-E3 SI4896DY-T1-E3 71300.pdf Vishay Siliconix Description: MOSFET N-CH 80V 6.7A 8-SOIC
Mounting Type: Surface Mount
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 7477 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 48369 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-GE3 SI4896DY-T1-GE3 71300.pdf Vishay Siliconix Description: MOSFET N-CH 80V 6.7A 8SOIC
Vgs (Max): ±20V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5744 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52 Stücke - Preis und Lieferfrist anzeigen
SQJ260EP-T1_GE3 SQJ260EP-T1_GE3 sqj260ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.77 EUR
10+ 3.37 EUR
Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2842 Stücke
Lieferzeit 21-28 Tag (e)
SQJ262EP-T1_GE3 SQJ262EP-T1_GE3 sqj262ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 146 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.56 EUR
10+ 3.18 EUR
100+ 2.48 EUR
Vishay Siliconix Description: MOSFET 2 N-CH 60V POWERPAK SO8
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
auf Bestellung 2860 Stücke
Lieferzeit 21-28 Tag (e)
IRFD120 IRFD120 sihfd120.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 100V 1.3A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 278 Stücke - Preis und Lieferfrist anzeigen
SIR184DP-T1-RE3 SIR184DP-T1-RE3 sir184dp.pdf Vishay Siliconix Description: MOSFET N-CHAN 60V POWERPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIR184
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
auf Bestellung 3512 Stücke
Lieferzeit 21-28 Tag (e)
SI1442DH-T1-GE3 SI1442DH-T1-GE3 si1442dh.pdf Vishay Siliconix Description: MOSFET N-CH 12V 4A SOT-363
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
auf Bestellung 11927 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 682 Stücke - Preis und Lieferfrist anzeigen
SI4459BDY-T1-GE3 SI4459BDY-T1-GE3 si4459bdy.pdf Vishay Siliconix Description: MOSFET P-CHAN 30V SO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4459
auf Bestellung 2217 Stücke
Lieferzeit 21-28 Tag (e)
SUD50N03-06AP-E3 SUD50N03-06AP-E3 73540.pdf Vishay Siliconix Description: MOSFET N-CH 30V 90A TO252
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2015 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SI4403DDY-T1-GE3 SI4403DDY-T1-GE3 si4403ddy.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 20V 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3187 Stücke
Lieferzeit 21-28 Tag (e)
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 si4403cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 13.4A 8SOIC
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 3318 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2484 Stücke - Preis und Lieferfrist anzeigen
SIS472DN-T1-GE3 SIS472DN-T1-GE3 sis472dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 20A 1212-8
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
auf Bestellung 2964 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2763 Stücke - Preis und Lieferfrist anzeigen
SI4421DY-T1-GE3 SI4421DY-T1-GE3 si4421dy.pdf Vishay Siliconix Description: MOSFET P-CH 20V 10A 8-SOIC
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 850µA
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
auf Bestellung 975 Stücke
Lieferzeit 21-28 Tag (e)
SI4490DY-T1-GE3 SI4490DY-T1-GE3 71341.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.85A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SI4490
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1876 Stücke - Preis und Lieferfrist anzeigen
SI4490DY-T1-E3 SI4490DY-T1-E3 71341.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.85A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4490
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 929 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170688 Stücke - Preis und Lieferfrist anzeigen
IRFR120TRPBF IRFR120TRPBF 91266.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 417 Stücke
Lieferzeit 21-28 Tag (e)
SI1443EDH-T1-GE3 SI1443EDH-T1-GE3 si1443edh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4A SOT-363
Base Part Number: SI1443
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4432 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 30V 4A SOT-363
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±12V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 72 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SISS26DN-T1-GE3 SISS26DN-T1-GE3 siss26dn.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 57W (Tc)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CHANNEL 60V 60A 1212-8S
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SI7852ADP-T1-GE3 SI7852ADP-T1-GE3 si7852ad.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 80V 30A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3878 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14249 Stücke - Preis und Lieferfrist anzeigen
SQD40131EL_GE3 SQD40131EL_GE3 sqd40131el.pdf Vishay Siliconix Description: MOSFET P-CHAN 40V D-S TO-252
Base Part Number: SQD40131
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG448DV-T1-E3 DG448DV-T1-E3 dg447.pdf Vishay Siliconix Description: IC SWITCH SPST 25 OHM 6TSOP
Base Part Number: DG448
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 130ns, 95ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Voltage - Supply, Single (V+): 7V ~ 36V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 26868 Stücke
Lieferzeit 21-28 Tag (e)
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DG447DV-T1-E3 DG447DV-T1-E3 dg447.pdf Vishay Siliconix Description: IC SWITCH SPST 25 OHM 6TSOP
Base Part Number: DG447
Supplier Device Package: 6-TSOP
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 19pF, 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 130ns, 95ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Voltage - Supply, Single (V+): 7V ~ 36V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQ2361AEES-T1_GE3 SQ2361AEES-T1_GE3 sq2361aees.pdf Vishay Siliconix Description: MOSFET P-CH 60V 2.5A SSOT23
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
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SQ3427AEEV-T1_GE3 SQ3427AEEV-T1_GE3 sq3427aeev.pdf Vishay Siliconix Description: MOSFET P-CH 60V 6TSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs (Max): ±20V
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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SI7115DN-T1-E3 SI7115DN-T1-E3 si7115dn.pdf Vishay Siliconix Description: MOSFET P-CH 150V 8.9A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9571 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 145 Stücke - Preis und Lieferfrist anzeigen
IRLR110TRPBF IRLR110TRPBF sihlr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5969 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9136 Stücke - Preis und Lieferfrist anzeigen
SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 sia436dj.pdf Vishay Siliconix Description: MOSFET N-CH 8V 12A PPAK SC70-6
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIA436
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
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Vishay Siliconix Description: MOSFET N-CH 8V 12A SC70-6L
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA436
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IRF620STRLPBF IRF620STRLPBF sihf620s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
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IRF620STRRPBF IRF620STRRPBF sihf620s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 800 Stücke
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SI4931DY-T1-E3 SI4931DY-T1-E3 si4931dy.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 6.7A 8-SOICs
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Drain to Source Voltage (Vdss): 12V
Base Part Number: SI4931
Supplier Device Package: 8-SO
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 20154 Stücke
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auf Bestellung 156500 Stücke - Preis und Lieferfrist anzeigen
SIC638CD-T1-GE3 SIC638CD-T1-GE3 sic638.pdf Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
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4+ 6.84 EUR
10+ 6.15 EUR
25+ 5.8 EUR
100+ 4.94 EUR
250+ 4.64 EUR
500+ 4.06 EUR
1000+ 3.61 EUR
Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® MLP55-31L
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SI2338DS-T1-GE3 SI2338DS-T1-GE3 si2338ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6A SOT23
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
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Lieferzeit 21-28 Tag (e)
SI2393DS-T1-GE3 SI2393DS-T1-GE3 si2393ds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30 V SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 15V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2393
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Lieferzeit 21-28 Tag (e)
SIP32419DN-T1-GE4 SIP32419DN-T1-GE4 sip32429.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Features: Power Good, Slew Rate Controlled, Status Flag
Input Type: Non-Inverting
Rds On (Typ): 56mOhm
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 28V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Base Part Number: SIP324
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)
Mounting Type: Surface Mount
auf Bestellung 16011 Stücke
Lieferzeit 21-28 Tag (e)
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SIC780CD-T1-GE3 SIC780CD-T1-GE3 sic780.pdf Vishay Siliconix Description: IC BUCK ADJ 50A 40MLP
Base Part Number: SIC780
Supplier Device Package: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Package / Case: 40-PowerWFQFN Module
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: DrMOS
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI7461DP-T1-GE3 SI7461DP-T1-GE3 si7461dp.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7461
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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DG409DY-T1-E3 DG409DY-T1-E3 dg408.pdf Vishay Siliconix Description: IC MULTIPLEXER DUAL 4X1 16SOIC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG409
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Charge Injection: 20pC
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SQS840CENW-T1_GE3 SQS840CENW-T1_GE3 sqs840cenw.pdf Vishay Siliconix Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Base Part Number: SQS840
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8W
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Base Part Number: SQS840
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40 V PPAK 1212-8W
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6050 Stücke
Lieferzeit 21-28 Tag (e)
SQS423ENW-T1_GE3 SQS423ENW-T1_GE3 sqs423enw.pdf Vishay Siliconix Description: MOSFET P-CH 30V 16A PPAK 1212-8W
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8W
Package / Case: PowerPAK® 1212-8W
Base Part Number: SQS423
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 16A PPAK 1212-8W
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8W
Package / Case: PowerPAK® 1212-8W
Base Part Number: SQS423
auf Bestellung 2674 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30 V PPAK 1212-8W
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIS862DN-T1-GE3 SIS862DN-T1-GE3 sis862dn.pdf Vishay Siliconix Description: MOSFET N-CH 60V 40A 1212
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Base Part Number: SIS862
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
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Lieferzeit 21-28 Tag (e)
SI3474DV-T1-GE3 SI3474DV-T1-GE3 si3474dv.pdf Vishay Siliconix Description: MOSFET N-CH 100V 3.8A TSOP-6
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
SIA931DJ-T1-GE3 SIA931DJ-T1-GE3 sia931dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 4.5A SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18601 Stücke
Lieferzeit 21-28 Tag (e)
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SIP32431DNP3-T1GE4 SIP32431DNP3-T1GE4 sip32431.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32431
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Input Type: Non-Inverting
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Base Part Number: SIP32431
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
auf Bestellung 688145 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Base Part Number: SIP324
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 18021 Stücke
Lieferzeit 21-28 Tag (e)
DG3157EDL-T1-GE3 DG3157EDL-T1-GE3 dg3157e.pdf Vishay Siliconix Description: IC DECODER/DEMUX SC70
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel-to-Channel Matching (ΔRon): 90mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -61dB @ 10MHz
Charge Injection: 1.3pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-6
-3db Bandwidth: 580MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC DECODER/DEMUX SC70
Part Status: Active
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel-to-Channel Matching (ΔRon): 90mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -61dB @ 10MHz
Charge Injection: 1.3pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-6
-3db Bandwidth: 580MHz
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 1515 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.04 EUR
30+ 0.88 EUR
32+ 0.82 EUR
100+ 0.66 EUR
250+ 0.61 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
Vishay Siliconix Description: IC DECODER/DEMUX SC70
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -61dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100nA
Charge Injection: 1.3pC
-3db Bandwidth: 580MHz
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 90mOhm
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
auf Bestellung 2125 Stücke
Lieferzeit 21-28 Tag (e)
DG308BDY-T1-E3 DG308BDY-T1-E3 dg308b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16SOIC
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Base Part Number: DG308
Switch Circuit: SPST - NO
Part Status: Active
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Channel-to-Channel Matching (ΔRon): 1.7Ohm
auf Bestellung 945 Stücke
Lieferzeit 21-28 Tag (e)
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SIA413ADJ-T1-GE3 sia413adj.pdf Vishay Siliconix Description: MOSFET P-CH 12V 12A SC70-6
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Base Part Number: SIA413
Package / Case: PowerPAK® SC-70-6
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 12V 12A SC70-6
Base Part Number: SIA413
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 12V 12A SC70-6
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI4413ADY-T1-E3 SI4413ADY-T1-E3 si4413ad.pdf Vishay Siliconix Description: MOSFET P-CH 30V 10.5A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drain to Source Voltage (Vdss): 30V
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
SI7149DP-T1-GE3 SI7149DP-T1-GE3 si7149dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1501 Stücke
Lieferzeit 21-28 Tag (e)
SI4628DY-T1-GE3 SI4628DY-T1-GE3 si4628dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 38A 8SOIC
FET Type: N-Channel
Part Status: Obsolete
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
auf Bestellung 63 Stücke
Lieferzeit 21-28 Tag (e)
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IRFR310TRPBF IRFR310TRPBF sihfr310.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 400V 1.7A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFR310
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
auf Bestellung 3534 Stücke
Lieferzeit 21-28 Tag (e)
SQM60N20-35_GE3 SQM60N20-35_GE3 sqm60n20-35.pdf Vishay Siliconix Description: MOSFET N-CH 200V 60A TO263
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 200V 60A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
auf Bestellung 647 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9.41 EUR
10+ 8.46 EUR
100+ 6.93 EUR
Vishay Siliconix Description: MOSFET N-CH 200V 60A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 200V
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Lieferzeit 21-28 Tag (e)
SUD50P08-25L-E3 SUD50P08-25L-E3 sud50p08.pdf Vishay Siliconix Description: MOSFET P-CH 80V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
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SI4922BDY-T1-E3 SI4922BDY-T1-E3 si4922bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4922
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
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SISH101DN-T1-GE3 SISH101DN-T1-GE3 sish101dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V POWERPAK 1212
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
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SIA466EDJ-T1-GE3 SIA466EDJ-T1-GE3 sia466edj.pdf Vishay Siliconix Description: MOSFET N-CH 20V 25A SC-70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 1V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10894 Stücke
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SI7655ADN-T1-GE3 SI7655ADN-T1-GE3 si7655adn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 40A 1212-8S
Base Part Number: SI7655
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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IRFR420ATRPBF sihfr420.pdf
IRFR420ATRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3077 Stücke
Lieferzeit 21-28 Tag (e)
IRFR420TRLPBF sihfr420.pdf
IRFR420TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Technology: MOSFET (Metal Oxide)
Part Status: Active
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 476 Stücke
Lieferzeit 21-28 Tag (e)
SIHFR420A-GE3 sihfr420.pdf
SIHFR420A-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SiHFR420
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA60DP-T1-GE3 sira60dp.pdf
SIRA60DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A POWERPAKSO
Base Part Number: SIRA60
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
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SIRA60DP-T1-GE3 sira60dp.pdf
SIRA60DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A POWERPAKSO
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Base Part Number: SIRA60
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
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SIRA60DP-T1-GE3 sira60dp.pdf
SIRA60DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A POWERPAKSO
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIRA60
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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SIRA60DP-T1-RE3 sira60dp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A POWERPAKSO
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIRA60
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P06-15-GE3 sud50p06-15.pdf
SUD50P06-15-GE3
Hersteller: Vishay Siliconix
Description: Description: MOSFET P-CH 60V 50A TO-252
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP8N50D-GE3 sihp8n50d.pdf
SIHP8N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
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Lieferzeit 21-28 Tag (e)
8+ 3.56 EUR
10+ 3.19 EUR
100+ 2.48 EUR
SIHP690N60E-GE3 sihp690n60e.pdf
SIHP690N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.4A TO220AB
Base Part Number: SIHP690
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 1050 Stücke
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SIHF8N50D-E3 sihfp8n50d.pdf
SIHF8N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 33W (Tc)
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SIHF530-GE3 91019.pdf
SIHF530-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Base Part Number: SIHF530
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFU9220-GE3 sihfr922.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A TO251AA
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SiHFU9220
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF520STRL-GE3 sihf520s.pdf
SIHF520STRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF520
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF520STRR-GE3 sihf520s.pdf
SIHF520STRR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF520
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA533EDJ-T1-GE3 sia533edj.pdf
SIA533EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
FET Type: N and P-Channel
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40375 Stücke - Preis und Lieferfrist anzeigen
SIA533EDJ-T1-GE3 sia533edj.pdf
SIA533EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA533
auf Bestellung 40375 Stücke
Lieferzeit 21-28 Tag (e)
SIA519EDJ-T1-GE3 sia519edj.pdf
SIA519EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA519
Supplier Device Package: PowerPAK® SC-70-6 Dual
auf Bestellung 35085 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1030 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-E3 71300.pdf
SI4896DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8-SOIC
Mounting Type: Surface Mount
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 7477 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 48369 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-GE3 71300.pdf
SI4896DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SOIC
Vgs (Max): ±20V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5744 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52 Stücke - Preis und Lieferfrist anzeigen
SQJ260EP-T1_GE3 sqj260ep.pdf
SQJ260EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2858 Stücke - Preis und Lieferfrist anzeigen
SQJ260EP-T1_GE3 sqj260ep.pdf
SQJ260EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
auf Bestellung 16 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2842 Stücke - Preis und Lieferfrist anzeigen
7+ 3.77 EUR
10+ 3.37 EUR
SQJ260EP-T1_GE3 sqj260ep.pdf
SQJ260EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2842 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16 Stücke - Preis und Lieferfrist anzeigen
SQJ262EP-T1_GE3 sqj262ep.pdf
SQJ262EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3006 Stücke - Preis und Lieferfrist anzeigen
SQJ262EP-T1_GE3 sqj262ep.pdf
SQJ262EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 146 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2860 Stücke - Preis und Lieferfrist anzeigen
8+ 3.56 EUR
10+ 3.18 EUR
100+ 2.48 EUR
SQJ262EP-T1_GE3 sqj262ep.pdf
SQJ262EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W (Tc), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
auf Bestellung 2860 Stücke
Lieferzeit 21-28 Tag (e)
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IRFD120 техническая информация sihfd120.pdf
IRFD120
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 278 Stücke - Preis und Lieferfrist anzeigen
SIR184DP-T1-RE3 sir184dp.pdf
SIR184DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 60V POWERPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIR184
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
auf Bestellung 3512 Stücke
Lieferzeit 21-28 Tag (e)
SI1442DH-T1-GE3 si1442dh.pdf
SI1442DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SOT-363
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
auf Bestellung 11927 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 682 Stücke - Preis und Lieferfrist anzeigen
SI4459BDY-T1-GE3 si4459bdy.pdf
SI4459BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V SO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4459
auf Bestellung 2217 Stücke
Lieferzeit 21-28 Tag (e)
SUD50N03-06AP-E3 73540.pdf
SUD50N03-06AP-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2015 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SI4403DDY-T1-GE3 si4403ddy.pdf
SI4403DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 20V 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3187 Stücke
Lieferzeit 21-28 Tag (e)
SI4403CDY-T1-GE3 si4403cd.pdf
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SOIC
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 3318 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2484 Stücke - Preis und Lieferfrist anzeigen
SIS472DN-T1-GE3 sis472dn.pdf
SIS472DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
auf Bestellung 2964 Stücke
Lieferzeit 21-28 Tag (e)
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SI4421DY-T1-GE3 si4421dy.pdf
SI4421DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8-SOIC
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 850µA
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
auf Bestellung 975 Stücke
Lieferzeit 21-28 Tag (e)
SI4490DY-T1-GE3 71341.pdf
SI4490DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SI4490
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1876 Stücke - Preis und Lieferfrist anzeigen
SI4490DY-T1-E3 71341.pdf
SI4490DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4490
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
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IRFR120TRPBF 91266.pdf
IRFR120TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 417 Stücke
Lieferzeit 21-28 Tag (e)
SI1443EDH-T1-GE3 si1443edh.pdf
SI1443EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A SOT-363
Base Part Number: SI1443
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3072 Stücke - Preis und Lieferfrist anzeigen
SI1443EDH-T1-GE3 si1443edh.pdf
SI1443EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A SOT-363
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±12V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
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Lieferzeit 21-28 Tag (e)
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SISS26DN-T1-GE3 siss26dn.pdf
SISS26DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 57W (Tc)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4521 Stücke - Preis und Lieferfrist anzeigen
SISS26DN-T1-GE3 siss26dn.pdf
SISS26DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 60A 1212-8S
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 4521 Stücke
Lieferzeit 21-28 Tag (e)
SI7852ADP-T1-GE3 техническая информация si7852ad.pdf
SI7852ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3878 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14249 Stücke - Preis und Lieferfrist anzeigen
SQD40131EL_GE3 sqd40131el.pdf
SQD40131EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V D-S TO-252
Base Part Number: SQD40131
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2864 Stücke
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DG448DV-T1-E3 dg447.pdf
DG448DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 25 OHM 6TSOP
Base Part Number: DG448
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 130ns, 95ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Voltage - Supply, Single (V+): 7V ~ 36V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 26868 Stücke
Lieferzeit 21-28 Tag (e)
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DG447DV-T1-E3 dg447.pdf
DG447DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 25 OHM 6TSOP
Base Part Number: DG447
Supplier Device Package: 6-TSOP
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 19pF, 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 130ns, 95ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Voltage - Supply, Single (V+): 7V ~ 36V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQ2361AEES-T1_GE3 sq2361aees.pdf
SQ2361AEES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SSOT23
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 11765 Stücke
Lieferzeit 21-28 Tag (e)
SQ3427AEEV-T1_GE3 sq3427aeev.pdf
SQ3427AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 6TSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs (Max): ±20V
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 12854 Stücke
Lieferzeit 21-28 Tag (e)
SI7115DN-T1-E3 si7115dn.pdf
SI7115DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9571 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 145 Stücke - Preis und Lieferfrist anzeigen
IRLR110TRPBF sihlr110.pdf
IRLR110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5969 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9136 Stücke - Preis und Lieferfrist anzeigen
SIA436DJ-T1-GE3 sia436dj.pdf
SIA436DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIA436
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
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SIA436DJ-T1-GE3 sia436dj.pdf
SIA436DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A SC70-6L
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA436
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Lieferzeit 21-28 Tag (e)
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IRF620STRLPBF sihf620s.pdf
IRF620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
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IRF620STRRPBF sihf620s.pdf
IRF620STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
SI4931DY-T1-E3 si4931dy.pdf
SI4931DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6.7A 8-SOICs
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Drain to Source Voltage (Vdss): 12V
Base Part Number: SI4931
Supplier Device Package: 8-SO
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 20154 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 156500 Stücke - Preis und Lieferfrist anzeigen
SIC638CD-T1-GE3 sic638.pdf
SIC638CD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC638CD-T1-GE3 sic638.pdf
SIC638CD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2885 Stücke - Preis und Lieferfrist anzeigen
4+ 6.84 EUR
10+ 6.15 EUR
25+ 5.8 EUR
100+ 4.94 EUR
250+ 4.64 EUR
500+ 4.06 EUR
1000+ 3.61 EUR
SIC638CD-T1-GE3 sic638.pdf
SIC638CD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® MLP55-31L
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Lieferzeit 21-28 Tag (e)
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SI2338DS-T1-GE3 si2338ds.pdf
SI2338DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A SOT23
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
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SI2393DS-T1-GE3 si2393ds.pdf
SI2393DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2393DS-T1-GE3 si2393ds.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30 V SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 15V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2393
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SIP32419DN-T1-GE4 sip32429.pdf
SIP32419DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Features: Power Good, Slew Rate Controlled, Status Flag
Input Type: Non-Inverting
Rds On (Typ): 56mOhm
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 28V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Base Part Number: SIP324
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)
Mounting Type: Surface Mount
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SIC780CD-T1-GE3 sic780.pdf
SIC780CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 50A 40MLP
Base Part Number: SIC780
Supplier Device Package: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.5V ~ 18V
Package / Case: 40-PowerWFQFN Module
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: DrMOS
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI7461DP-T1-GE3 si7461dp.pdf
SI7461DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7461
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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DG409DY-T1-E3 dg408.pdf
DG409DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4X1 16SOIC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG409
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Charge Injection: 20pC
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SQS840CENW-T1_GE3 sqs840cenw.pdf
SQS840CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Base Part Number: SQS840
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8W
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SQS840CENW-T1_GE3 sqs840cenw.pdf
SQS840CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Base Part Number: SQS840
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SQS840CENW-T1_GE3 sqs840cenw.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40 V PPAK 1212-8W
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQS423ENW-T1_GE3 sqs423enw.pdf
SQS423ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK 1212-8W
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8W
Package / Case: PowerPAK® 1212-8W
Base Part Number: SQS423
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQS423ENW-T1_GE3 sqs423enw.pdf
SQS423ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK 1212-8W
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8W
Package / Case: PowerPAK® 1212-8W
Base Part Number: SQS423
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SQS423ENW-T1_GE3 sqs423enw.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30 V PPAK 1212-8W
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIS862DN-T1-GE3 sis862dn.pdf
SIS862DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 40A 1212
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Base Part Number: SIS862
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
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SI3474DV-T1-GE3 si3474dv.pdf
SI3474DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A TSOP-6
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Vgs (Max): ±20V
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SIA931DJ-T1-GE3 sia931dj.pdf
SIA931DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32431
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
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SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Input Type: Non-Inverting
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Base Part Number: SIP32431
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
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SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Base Part Number: SIP324
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 105mOhm
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG3157EDL-T1-GE3 dg3157e.pdf
DG3157EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC DECODER/DEMUX SC70
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel-to-Channel Matching (ΔRon): 90mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -61dB @ 10MHz
Charge Injection: 1.3pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-6
-3db Bandwidth: 580MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG3157EDL-T1-GE3 dg3157e.pdf
DG3157EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC DECODER/DEMUX SC70
Part Status: Active
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel-to-Channel Matching (ΔRon): 90mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -61dB @ 10MHz
Charge Injection: 1.3pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-6
-3db Bandwidth: 580MHz
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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25+ 1.04 EUR
30+ 0.88 EUR
32+ 0.82 EUR
100+ 0.66 EUR
250+ 0.61 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
DG3157EDL-T1-GE3 dg3157e.pdf
DG3157EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC DECODER/DEMUX SC70
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -61dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100nA
Charge Injection: 1.3pC
-3db Bandwidth: 580MHz
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 90mOhm
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
auf Bestellung 2125 Stücke
Lieferzeit 21-28 Tag (e)
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DG308BDY-T1-E3 dg308b.pdf
DG308BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16SOIC
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Base Part Number: DG308
Switch Circuit: SPST - NO
Part Status: Active
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Channel-to-Channel Matching (ΔRon): 1.7Ohm
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SIA413ADJ-T1-GE3 sia413adj.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC70-6
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Base Part Number: SIA413
Package / Case: PowerPAK® SC-70-6
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SIA413ADJ-T1-GE3 sia413adj.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC70-6
Base Part Number: SIA413
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SIA413ADJ-T1-GE3 sia413adj.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC70-6
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
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SI4413ADY-T1-E3 si4413ad.pdf
SI4413ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.5A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 1589 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
SI7149DP-T1-GE3 si7149dp.pdf
SI7149DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1501 Stücke
Lieferzeit 21-28 Tag (e)
SI4628DY-T1-GE3 si4628dy.pdf
SI4628DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
FET Type: N-Channel
Part Status: Obsolete
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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IRFR310TRPBF техническая информация sihfr310.pdf
IRFR310TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFR310
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
auf Bestellung 3534 Stücke
Lieferzeit 21-28 Tag (e)
SQM60N20-35_GE3 sqm60n20-35.pdf
SQM60N20-35_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 60A TO263
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQM60N20-35_GE3 sqm60n20-35.pdf
SQM60N20-35_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 60A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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Lieferzeit 21-28 Tag (e)
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3+ 9.41 EUR
10+ 8.46 EUR
100+ 6.93 EUR
SQM60N20-35_GE3 sqm60n20-35.pdf
SQM60N20-35_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 60A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 200V
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SUD50P08-25L-E3 sud50p08.pdf
SUD50P08-25L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUD50P08-25L-E3 sud50p08.pdf
SUD50P08-25L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
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SI4922BDY-T1-E3 si4922bd.pdf
SI4922BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4922
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
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SISH101DN-T1-GE3 sish101dn.pdf
SISH101DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V POWERPAK 1212
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
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SIA466EDJ-T1-GE3 sia466edj.pdf
SIA466EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 25A SC-70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 1V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10894 Stücke
Lieferzeit 21-28 Tag (e)
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SI7655ADN-T1-GE3 si7655adn.pdf
SI7655ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A 1212-8S
Base Part Number: SI7655
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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