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SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix sisa14dn.pdf Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 20877 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix si2365eds.pdf Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 SI8424CDB-T1-E1 Vishay Siliconix si8424cdb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 19
SI1011X-T1-GE3 SI1011X-T1-GE3 Vishay Siliconix si1011x.pdf Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix si8466edb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 4012 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix sia449dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 130337 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix si1062x.pdf Description: MOSFET N-CH 20V SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114835 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SIA483DJ-T1-GE3 SIA483DJ-T1-GE3 Vishay Siliconix sia483dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 97319 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
26+ 1.03 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 22
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix sib417aedk.pdf Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 SIRA18DP-T1-GE3 Vishay Siliconix sira18dp.pdf Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
19+ 1.39 EUR
100+ 1.06 EUR
500+ 0.84 EUR
Mindestbestellmenge: 17
SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix si1480dh.pdf Description: MOSFET N-CH 100V 2.6A SC70-6
auf Bestellung 251 Stücke:
Lieferzeit 21-28 Tag (e)
SI1011X-T1-GE3 SI1011X-T1-GE3 Vishay Siliconix si1011x.pdf Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix sib417aedk.pdf Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix sisa14dn.pdf Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix si2365eds.pdf Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 SI8424CDB-T1-E1 Vishay Siliconix si8424cdb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Produkt ist nicht verfügbar
SI1011X-T1-GE3 SI1011X-T1-GE3 Vishay Siliconix si1011x.pdf Description: MOSFET P-CH 12V SC-89
Produkt ist nicht verfügbar
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix si8466edb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix sia449dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 129000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
30000+ 0.31 EUR
75000+ 0.3 EUR
Mindestbestellmenge: 3000
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix si1062x.pdf Description: MOSFET N-CH 20V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
SIA483DJ-T1-GE3 SIA483DJ-T1-GE3 Vishay Siliconix sia483dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.42 EUR
6000+ 0.4 EUR
15000+ 0.37 EUR
30000+ 0.35 EUR
Mindestbestellmenge: 3000
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix sib417aedk.pdf Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 SIRA18DP-T1-GE3 Vishay Siliconix sira18dp.pdf Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix si1480dh.pdf Description: MOSFET N-CH 100V 2.6A SC70-6
Produkt ist nicht verfügbar
SIP32451DB-T2-GE1 SIP32451DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
SIP32454DB-T2-GE1 SIP32454DB-T2-GE1 Vishay Siliconix sip32454.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 1841 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.85 EUR
16+ 1.64 EUR
25+ 1.54 EUR
100+ 1.26 EUR
250+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
Mindestbestellmenge: 15
SIP32455DB-T2-GE1 SIP32455DB-T2-GE1 Vishay Siliconix sip32454.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32458DB-T2-GE1 SIP32458DB-T2-GE1 Vishay Siliconix sip32458.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 23927 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.82 EUR
25+ 1.71 EUR
100+ 1.4 EUR
250+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 13
SIP32459DB-T2-GE1 SIP32459DB-T2-GE1 Vishay Siliconix sip32458.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Part Status: Active
auf Bestellung 9634 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.91 EUR
10+ 2.61 EUR
25+ 2.47 EUR
100+ 2.03 EUR
250+ 1.9 EUR
500+ 1.68 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
SIP32461DB-T2-GE1 SIP32461DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 5095 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.28 EUR
25+ 1.2 EUR
100+ 0.98 EUR
250+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
SIP32451DB-T2-GE1 SIP32451DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32454DB-T2-GE1 SIP32454DB-T2-GE1 Vishay Siliconix sip32454.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32455DB-T2-GE1 SIP32455DB-T2-GE1 Vishay Siliconix sip32454.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32458DB-T2-GE1 SIP32458DB-T2-GE1 Vishay Siliconix sip32458.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.8 EUR
6000+ 0.75 EUR
15000+ 0.72 EUR
Mindestbestellmenge: 3000
SIP32459DB-T2-GE1 SIP32459DB-T2-GE1 Vishay Siliconix sip32458.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.24 EUR
6000+ 1.17 EUR
Mindestbestellmenge: 3000
SIP32461DB-T2-GE1 SIP32461DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.56 EUR
Mindestbestellmenge: 3000
SIHP33N60E-GE3 SIHP33N60E-GE3 Vishay Siliconix sihp33n60e.pdf Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 695 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.14 EUR
50+ 11.2 EUR
100+ 9.6 EUR
500+ 8.54 EUR
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SIHB33N60E-GE3 SIHB33N60E-GE3 Vishay Siliconix sihb33n60e.pdf Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 4395 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.27 EUR
10+ 11.98 EUR
100+ 9.69 EUR
500+ 8.61 EUR
1000+ 7.37 EUR
2000+ 6.94 EUR
Mindestbestellmenge: 2
SIS322DNT-T1-GE3 SIS322DNT-T1-GE3 Vishay Siliconix sis322dnt.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SIS322DNT-T1-GE3 SIS322DNT-T1-GE3 Vishay Siliconix sis322dnt.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SIS322DNT-T1-GE3 SIS322DNT-T1-GE3 Vishay Siliconix sis322dnt.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SI8489EDB-T2-E1 SI8489EDB-T2-E1 Vishay Siliconix si8489edb.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Produkt ist nicht verfügbar
SI8489EDB-T2-E1 SI8489EDB-T2-E1 Vishay Siliconix si8489edb.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
auf Bestellung 4861 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
2N7002-T1-E3 2N7002-T1-E3 Vishay Siliconix 70226.pdf Description: MOSFET N-CH 60V 115MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 5188 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
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IRFRC20TRLPBF IRFRC20TRLPBF Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
SI2307CDS-T1-E3 SI2307CDS-T1-E3 Vishay Siliconix si2307cds.pdf Description: MOSFET P-CH 30V 3.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 39529 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.06 EUR
100+ 0.74 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Vishay Siliconix sis435dnt.pdf Description: MOSFET P-CH 20V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
auf Bestellung 4378 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.82 EUR
17+ 1.58 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
SI5936DU-T1-GE3 SI5936DU-T1-GE3 Vishay Siliconix si5936du.pdf Description: MOSFET 2N-CH 30V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 10.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 4761 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.33 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 17
SI8810EDB-T2-E1 SI8810EDB-T2-E1 Vishay Siliconix si8810edb.pdf Description: MOSFET N-CH 20V 2.1A MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
SIA437DJ-T1-GE3 SIA437DJ-T1-GE3 Vishay Siliconix sia437dj.pdf Description: MOSFET P-CH 20V 29.7A PPAK SC70
auf Bestellung 22247 Stücke:
Lieferzeit 21-28 Tag (e)
SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 Vishay Siliconix sia922edj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
auf Bestellung 5651 Stücke:
Lieferzeit 21-28 Tag (e)
SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 Vishay Siliconix sia922edj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
auf Bestellung 5651 Stücke:
Lieferzeit 21-28 Tag (e)
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Vishay Siliconix sis435dnt.pdf Description: MOSFET P-CH 20V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
Produkt ist nicht verfügbar
SI5936DU-T1-GE3 SI5936DU-T1-GE3 Vishay Siliconix si5936du.pdf Description: MOSFET 2N-CH 30V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 10.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000
SI8810EDB-T2-E1 SI8810EDB-T2-E1 Vishay Siliconix si8810edb.pdf Description: MOSFET N-CH 20V 2.1A MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Produkt ist nicht verfügbar
SIA437DJ-T1-GE3 SIA437DJ-T1-GE3 Vishay Siliconix sia437dj.pdf Description: MOSFET P-CH 20V 29.7A PPAK SC70
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 Vishay Siliconix sia922edj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
Produkt ist nicht verfügbar
SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 Vishay Siliconix si2323dds.pdf Description: MOSFET P-CH 20V 5.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
auf Bestellung 860 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.33 EUR
23+ 1.15 EUR
100+ 0.8 EUR
500+ 0.62 EUR
Mindestbestellmenge: 20
SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 Vishay Siliconix si2371eds.pdf Description: MOSFET P-CH 30V 4.8A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
auf Bestellung 847 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
32+ 0.83 EUR
100+ 0.52 EUR
500+ 0.35 EUR
Mindestbestellmenge: 24
SI2392DS-T1-GE3 SI2392DS-T1-GE3 Vishay Siliconix Si2392DS.pdf Description: MOSFET N-CH 100V 3.1A SOT-23
Produkt ist nicht verfügbar
SISA14DN-T1-GE3 sisa14dn.pdf
SISA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 20877 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI2365EDS-T1-GE3 si2365eds.pdf
SI2365EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 si8424cdb.pdf
SI8424CDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 19
SI1011X-T1-GE3 si1011x.pdf
SI1011X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SI8466EDB-T2-E1 si8466edb.pdf
SI8466EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 4012 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SIA449DJ-T1-GE3 sia449dj.pdf
SIA449DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 130337 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
SI1062X-T1-GE3 si1062x.pdf
SI1062X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114835 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SIA483DJ-T1-GE3 sia483dj.pdf
SIA483DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 97319 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
26+ 1.03 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 22
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 sira18dp.pdf
SIRA18DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
19+ 1.39 EUR
100+ 1.06 EUR
500+ 0.84 EUR
Mindestbestellmenge: 17
SI1480DH-T1-GE3 si1480dh.pdf
SI1480DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.6A SC70-6
auf Bestellung 251 Stücke:
Lieferzeit 21-28 Tag (e)
SI1011X-T1-GE3 si1011x.pdf
SI1011X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SISA14DN-T1-GE3 sisa14dn.pdf
SISA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
SI2365EDS-T1-GE3 si2365eds.pdf
SI2365EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 si8424cdb.pdf
SI8424CDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Produkt ist nicht verfügbar
SI1011X-T1-GE3 si1011x.pdf
SI1011X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC-89
Produkt ist nicht verfügbar
SI8466EDB-T2-E1 si8466edb.pdf
SI8466EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
Mindestbestellmenge: 3000
SIA449DJ-T1-GE3 sia449dj.pdf
SIA449DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 129000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
30000+ 0.31 EUR
75000+ 0.3 EUR
Mindestbestellmenge: 3000
SI1062X-T1-GE3 si1062x.pdf
SI1062X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
SIA483DJ-T1-GE3 sia483dj.pdf
SIA483DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
6000+ 0.4 EUR
15000+ 0.37 EUR
30000+ 0.35 EUR
Mindestbestellmenge: 3000
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 sira18dp.pdf
SIRA18DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
SI1480DH-T1-GE3 si1480dh.pdf
SI1480DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.6A SC70-6
Produkt ist nicht verfügbar
SIP32451DB-T2-GE1 sip32452.pdf
SIP32451DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
SIP32454DB-T2-GE1 sip32454.pdf
SIP32454DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 1841 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.85 EUR
16+ 1.64 EUR
25+ 1.54 EUR
100+ 1.26 EUR
250+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
Mindestbestellmenge: 15
SIP32455DB-T2-GE1 sip32454.pdf
SIP32455DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32458DB-T2-GE1 sip32458.pdf
SIP32458DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 23927 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.82 EUR
25+ 1.71 EUR
100+ 1.4 EUR
250+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 13
SIP32459DB-T2-GE1 sip32458.pdf
SIP32459DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Part Status: Active
auf Bestellung 9634 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.91 EUR
10+ 2.61 EUR
25+ 2.47 EUR
100+ 2.03 EUR
250+ 1.9 EUR
500+ 1.68 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
SIP32461DB-T2-GE1 sip32461.pdf
SIP32461DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 5095 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.28 EUR
25+ 1.2 EUR
100+ 0.98 EUR
250+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
SIP32451DB-T2-GE1 sip32452.pdf
SIP32451DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32454DB-T2-GE1 sip32454.pdf
SIP32454DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32455DB-T2-GE1 sip32454.pdf
SIP32455DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32458DB-T2-GE1 sip32458.pdf
SIP32458DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.8 EUR
6000+ 0.75 EUR
15000+ 0.72 EUR
Mindestbestellmenge: 3000
SIP32459DB-T2-GE1 sip32458.pdf
SIP32459DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.46x0.96)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.24 EUR
6000+ 1.17 EUR
Mindestbestellmenge: 3000
SIP32461DB-T2-GE1 sip32461.pdf
SIP32461DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
Mindestbestellmenge: 3000
SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 695 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.14 EUR
50+ 11.2 EUR
100+ 9.6 EUR
500+ 8.54 EUR
Mindestbestellmenge: 2
SIHB33N60E-GE3 sihb33n60e.pdf
SIHB33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 4395 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.27 EUR
10+ 11.98 EUR
100+ 9.69 EUR
500+ 8.61 EUR
1000+ 7.37 EUR
2000+ 6.94 EUR
Mindestbestellmenge: 2
SIS322DNT-T1-GE3 sis322dnt.pdf
SIS322DNT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SIS322DNT-T1-GE3 sis322dnt.pdf
SIS322DNT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SIS322DNT-T1-GE3 sis322dnt.pdf
SIS322DNT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SI8489EDB-T2-E1 si8489edb.pdf
SI8489EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Produkt ist nicht verfügbar
SI8489EDB-T2-E1 si8489edb.pdf
SI8489EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
auf Bestellung 4861 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.92 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
2N7002-T1-E3 70226.pdf
2N7002-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 5188 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 18
IRFRC20TRLPBF sihfrc20.pdf
IRFRC20TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
SI2307CDS-T1-E3 si2307cds.pdf
SI2307CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 39529 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.06 EUR
100+ 0.74 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
SIS435DNT-T1-GE3 sis435dnt.pdf
SIS435DNT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
auf Bestellung 4378 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.58 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
SI5936DU-T1-GE3 si5936du.pdf
SI5936DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 10.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 4761 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.33 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 17
SI8810EDB-T2-E1 si8810edb.pdf
SI8810EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
SIA437DJ-T1-GE3 sia437dj.pdf
SIA437DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 29.7A PPAK SC70
auf Bestellung 22247 Stücke:
Lieferzeit 21-28 Tag (e)
SIA922EDJ-T1-GE3 sia922edj.pdf
SIA922EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A SC70-6
auf Bestellung 5651 Stücke:
Lieferzeit 21-28 Tag (e)
SIA922EDJ-T1-GE3 sia922edj.pdf
SIA922EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A SC70-6
auf Bestellung 5651 Stücke:
Lieferzeit 21-28 Tag (e)
SIS435DNT-T1-GE3 sis435dnt.pdf
SIS435DNT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
Produkt ist nicht verfügbar
SI5936DU-T1-GE3 si5936du.pdf
SI5936DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 10.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.58 EUR
Mindestbestellmenge: 3000
SI8810EDB-T2-E1 si8810edb.pdf
SI8810EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Produkt ist nicht verfügbar
SIA437DJ-T1-GE3 sia437dj.pdf
SIA437DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 29.7A PPAK SC70
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA922EDJ-T1-GE3 sia922edj.pdf
SIA922EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A SC70-6
Produkt ist nicht verfügbar
SI2323DDS-T1-GE3 si2323dds.pdf
SI2323DDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
auf Bestellung 860 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.33 EUR
23+ 1.15 EUR
100+ 0.8 EUR
500+ 0.62 EUR
Mindestbestellmenge: 20
SI2371EDS-T1-GE3 si2371eds.pdf
SI2371EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.8A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
auf Bestellung 847 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
32+ 0.83 EUR
100+ 0.52 EUR
500+ 0.35 EUR
Mindestbestellmenge: 24
SI2392DS-T1-GE3 Si2392DS.pdf
SI2392DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT-23
Produkt ist nicht verfügbar
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