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SIA914ADJ-T1-GE3 SIA914ADJ-T1-GE3 Vishay Siliconix sia914adj.pdf Description: MOSFET 2N-CH 20V 4.5A SC70-6L
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DG418BDJ DG418BDJ Vishay Siliconix dg417b.pdf Description: IC SWITCH SPST-NO X 1 25OHM 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 1
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DG441BDJ DG441BDJ Vishay Siliconix DG441B%2C442B.pdf Description: IC SWITCH SPST-NCX4 80OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG442BDJ DG442BDJ Vishay Siliconix 72625.pdf Description: IC SWITCH QUAD SPST 16DIP
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DG442DY-T1 DG442DY-T1 Vishay Siliconix dg441.pdf Description: IC SWITCH QUAD SPST 16SOIC
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SI2356DS-T1-GE3 SI2356DS-T1-GE3 Vishay Siliconix si2356ds.pdf Description: MOSFET N-CH 40V 4.3A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
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3000+0.18 EUR
6000+0.16 EUR
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15000+0.14 EUR
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SIZ340DT-T1-GE3 SIZ340DT-T1-GE3 Vishay Siliconix siz340dt.pdf Description: MOSFET 2N-CH 30V 30A/40A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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SI7317DN-T1-GE3 SI7317DN-T1-GE3 Vishay Siliconix si7317dn.pdf Description: MOSFET P-CH 150V 2.8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V
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SI3476DV-T1-GE3 SI3476DV-T1-GE3 Vishay Siliconix si3476dv.pdf Description: MOSFET N-CH 80V 4.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
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SI5411EDU-T1-GE3 SI5411EDU-T1-GE3 Vishay Siliconix si5411edu.pdf Description: MOSFET P-CH 12V 25A PPAK
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SI3417DV-T1-GE3 SI3417DV-T1-GE3 Vishay Siliconix si3417dv.pdf Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 9000 Stücke:
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SI7454DDP-T1-GE3 SI7454DDP-T1-GE3 Vishay Siliconix si7454ddp.pdf Description: MOSFET N-CH 100V 21A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
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SI7456DDP-T1-GE3 SI7456DDP-T1-GE3 Vishay Siliconix si7456ddp.pdf Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
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SIA453EDJ-T1-GE3 SIA453EDJ-T1-GE3 Vishay Siliconix sia453edj.pdf Description: MOSFET P-CH 30V 24A PPAK SC-70-6
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SIR472ADP-T1-GE3 SIR472ADP-T1-GE3 Vishay Siliconix sir472adp.pdf Description: MOSFET N-CH 30V 18A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
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SIS990DN-T1-GE3 SIS990DN-T1-GE3 Vishay Siliconix sis990dn.pdf Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
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SISS40DN-T1-GE3 SISS40DN-T1-GE3 Vishay Siliconix siss40dn.pdf Description: MOSFET N-CH 100V 36.5A PPAK
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SI2356DS-T1-GE3 SI2356DS-T1-GE3 Vishay Siliconix si2356ds.pdf Description: MOSFET N-CH 40V 4.3A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 39988 Stücke:
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SIZ340DT-T1-GE3 SIZ340DT-T1-GE3 Vishay Siliconix siz340dt.pdf Description: MOSFET 2N-CH 30V 30A/40A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 6695 Stücke:
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SI7317DN-T1-GE3 SI7317DN-T1-GE3 Vishay Siliconix si7317dn.pdf Description: MOSFET P-CH 150V 2.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V
auf Bestellung 22397 Stücke:
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500+0.99 EUR
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SI3476DV-T1-GE3 SI3476DV-T1-GE3 Vishay Siliconix si3476dv.pdf Description: MOSFET N-CH 80V 4.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
auf Bestellung 20709 Stücke:
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SI5411EDU-T1-GE3 SI5411EDU-T1-GE3 Vishay Siliconix si5411edu.pdf Description: MOSFET P-CH 12V 25A PPAK
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SI3417DV-T1-GE3 SI3417DV-T1-GE3 Vishay Siliconix si3417dv.pdf Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 10222 Stücke:
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SI7454DDP-T1-GE3 SI7454DDP-T1-GE3 Vishay Siliconix si7454ddp.pdf Description: MOSFET N-CH 100V 21A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 5136 Stücke:
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SI7456DDP-T1-GE3 SI7456DDP-T1-GE3 Vishay Siliconix si7456ddp.pdf Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
auf Bestellung 4685 Stücke:
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100+1.59 EUR
500+1.41 EUR
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SIA453EDJ-T1-GE3 SIA453EDJ-T1-GE3 Vishay Siliconix sia453edj.pdf Description: MOSFET P-CH 30V 24A PPAK SC-70-6
auf Bestellung 7362 Stücke:
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SIR472ADP-T1-GE3 SIR472ADP-T1-GE3 Vishay Siliconix sir472adp.pdf Description: MOSFET N-CH 30V 18A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
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17+1.06 EUR
100+0.69 EUR
500+0.53 EUR
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SIS990DN-T1-GE3 SIS990DN-T1-GE3 Vishay Siliconix sis990dn.pdf Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
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SISS40DN-T1-GE3 SISS40DN-T1-GE3 Vishay Siliconix siss40dn.pdf Description: MOSFET N-CH 100V 36.5A PPAK
Produkt ist nicht verfügbar
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SIA453EDJ-T1-GE3 SIA453EDJ-T1-GE3 Vishay Siliconix sia453edj.pdf Description: MOSFET P-CH 30V 24A PPAK SC-70-6
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SIP32462DB-T2-GE1 SIP32462DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
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DG1411EN-T1-GE4 DG1411EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SWITCH SPST-NCX4 1.8OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1412EN-T1-GE4 DG1412EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SWITCH SPST-NOX4 1.8OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1413EN-T1-GE4 DG1413EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NCX4 1.5OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1411EQ-T1-GE3 DG1411EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NCX4 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG1412EQ-T1-GE3 DG1412EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NOX4 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1413EQ-T1-GE3 DG1413EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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SIP32462DB-T2-GE1 SIP32462DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 8861 Stücke:
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21+0.87 EUR
25+0.82 EUR
100+0.67 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.42 EUR
Mindestbestellmenge: 18
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DG1411EN-T1-GE4 DG1411EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SWITCH SPST-NCX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG1412EN-T1-GE4 DG1412EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SWITCH SPST-NOX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG1413EN-T1-GE4 DG1413EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NCX4 1.5OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1411EQ-T1-GE3 DG1411EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NCX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG1412EQ-T1-GE3 DG1412EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NOX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG1413EQ-T1-GE3 DG1413EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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IRF740BPBF IRF740BPBF Vishay Siliconix irf740b.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Produkt ist nicht verfügbar
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IRF830BPBF IRF830BPBF Vishay Siliconix irf830b.pdf Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
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IRF840BPBF IRF840BPBF Vishay Siliconix irf840b.pdf Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
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6+3.15 EUR
50+1.52 EUR
100+1.36 EUR
500+1.09 EUR
1000+1 EUR
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SIHB10N40D-GE3 SIHB10N40D-GE3 Vishay Siliconix sihb10n40d.pdf Description: MOSFET N-CH 400V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Produkt ist nicht verfügbar
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SIHB8N50D-GE3 SIHB8N50D-GE3 Vishay Siliconix sihb8n50d.pdf Description: MOSFET N-CH 500V 8.7A D2PAK
Produkt ist nicht verfügbar
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SIHP10N40D-GE3 SIHP10N40D-GE3 Vishay Siliconix sihp10n40d.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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SIHP6N40D-GE3 SIHP6N40D-GE3 Vishay Siliconix sihp6n40d.pdf Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
auf Bestellung 990 Stücke:
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SIHU3N50D-GE3 SIHU3N50D-GE3 Vishay Siliconix sihu3n50d.pdf Description: MOSFET N-CH 500V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Produkt ist nicht verfügbar
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SIHU5N50D-GE3 SIHU5N50D-GE3 Vishay Siliconix sihu5n50d.pdf Description: MOSFET N-CH 500V 5.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
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IRFP460BPBF IRFP460BPBF Vishay Siliconix sihg460b.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP8N50D-GE3 SIHP8N50D-GE3 Vishay Siliconix sihp8n50d.pdf Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 60 Stücke:
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50+1.4 EUR
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SI4202DY-T1-GE3 SI4202DY-T1-GE3 Vishay Siliconix si4202dy.pdf Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 4700 Stücke:
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2500+0.88 EUR
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SI4288DY-T1-GE3 SI4288DY-T1-GE3 Vishay Siliconix si4288dy.pdf Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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SI4909DY-T1-GE3 SI4909DY-T1-GE3 Vishay Siliconix si4909dy.pdf Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
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2500+0.64 EUR
5000+0.59 EUR
7500+0.57 EUR
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SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix sib410dk.pdf Description: MOSFET N-CH 30V 9A 8SO
Produkt ist nicht verfügbar
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SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix sir876adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.05 EUR
Mindestbestellmenge: 3000
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SIA914ADJ-T1-GE3 sia914adj.pdf
SIA914ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6L
auf Bestellung 8352 Stücke:
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DG418BDJ dg417b.pdf
DG418BDJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NO X 1 25OHM 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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DG441BDJ DG441B%2C442B.pdf
DG441BDJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 80OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG442BDJ 72625.pdf
DG442BDJ
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Produkt ist nicht verfügbar
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DG442DY-T1 dg441.pdf
DG442DY-T1
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Produkt ist nicht verfügbar
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SI2356DS-T1-GE3 si2356ds.pdf
SI2356DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 4.3A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 3000
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SIZ340DT-T1-GE3 siz340dt.pdf
SIZ340DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A/40A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
Mindestbestellmenge: 3000
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SI7317DN-T1-GE3 si7317dn.pdf
SI7317DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.76 EUR
6000+0.72 EUR
9000+0.69 EUR
Mindestbestellmenge: 3000
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SI3476DV-T1-GE3 si3476dv.pdf
SI3476DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 4.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.27 EUR
9000+0.23 EUR
Mindestbestellmenge: 3000
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SI5411EDU-T1-GE3 si5411edu.pdf
SI5411EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 25A PPAK
Produkt ist nicht verfügbar
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SI3417DV-T1-GE3 si3417dv.pdf
SI3417DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000
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SI7454DDP-T1-GE3 si7454ddp.pdf
SI7454DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 21A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.96 EUR
Mindestbestellmenge: 3000
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SI7456DDP-T1-GE3 si7456ddp.pdf
SI7456DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.16 EUR
Mindestbestellmenge: 3000
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SIA453EDJ-T1-GE3 sia453edj.pdf
SIA453EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 24A PPAK SC-70-6
auf Bestellung 6000 Stücke:
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SIR472ADP-T1-GE3 sir472adp.pdf
SIR472ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
Mindestbestellmenge: 3000
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SIS990DN-T1-GE3 sis990dn.pdf
SIS990DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.56 EUR
Mindestbestellmenge: 3000
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SISS40DN-T1-GE3 siss40dn.pdf
SISS40DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK
Produkt ist nicht verfügbar
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SI2356DS-T1-GE3 si2356ds.pdf
SI2356DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 4.3A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 39988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 23
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SIZ340DT-T1-GE3 siz340dt.pdf
SIZ340DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A/40A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 6695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.42 EUR
100+0.97 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 9
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SI7317DN-T1-GE3 si7317dn.pdf
SI7317DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V
auf Bestellung 22397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
12+1.5 EUR
100+1.16 EUR
500+0.99 EUR
1000+0.8 EUR
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SI3476DV-T1-GE3 si3476dv.pdf
SI3476DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 4.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
auf Bestellung 20709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
25+0.71 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 18
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SI5411EDU-T1-GE3 si5411edu.pdf
SI5411EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 25A PPAK
Produkt ist nicht verfügbar
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SI3417DV-T1-GE3 si3417dv.pdf
SI3417DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 10222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
27+0.66 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
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SI7454DDP-T1-GE3 si7454ddp.pdf
SI7454DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 21A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 4.1W (Ta), 29.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 5136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.2 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 6
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SI7456DDP-T1-GE3 si7456ddp.pdf
SI7456DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
auf Bestellung 4685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
10+1.92 EUR
100+1.59 EUR
500+1.41 EUR
1000+1.32 EUR
Mindestbestellmenge: 7
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SIA453EDJ-T1-GE3 sia453edj.pdf
SIA453EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 24A PPAK SC-70-6
auf Bestellung 7362 Stücke:
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SIR472ADP-T1-GE3 sir472adp.pdf
SIR472ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 6053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.06 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
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SIS990DN-T1-GE3 sis990dn.pdf
SIS990DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 13969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
16+1.17 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.63 EUR
Mindestbestellmenge: 13
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SISS40DN-T1-GE3 siss40dn.pdf
SISS40DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK
Produkt ist nicht verfügbar
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SIA453EDJ-T1-GE3 sia453edj.pdf
SIA453EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 24A PPAK SC-70-6
auf Bestellung 7362 Stücke:
Lieferzeit 10-14 Tag (e)
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SIP32462DB-T2-GE1 sip32461.pdf
SIP32462DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.36 EUR
Mindestbestellmenge: 3000
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DG1411EN-T1-GE4 DG141x.pdf
DG1411EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 1.8OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1412EN-T1-GE4 DG141x.pdf
DG1412EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 1.8OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1413EN-T1-GE4 DG141x.pdf
DG1413EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 1.5OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1411EQ-T1-GE3 DG141x.pdf
DG1411EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1412EQ-T1-GE3 DG141x.pdf
DG1412EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1413EQ-T1-GE3 DG141x.pdf
DG1413EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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SIP32462DB-T2-GE1 sip32461.pdf
SIP32462DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 8861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.87 EUR
25+0.82 EUR
100+0.67 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.42 EUR
Mindestbestellmenge: 18
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DG1411EN-T1-GE4 DG141x.pdf
DG1411EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1412EN-T1-GE4 DG141x.pdf
DG1412EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1413EN-T1-GE4 DG141x.pdf
DG1413EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 1.5OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1411EQ-T1-GE3 DG141x.pdf
DG1411EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1412EQ-T1-GE3 DG141x.pdf
DG1412EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG1413EQ-T1-GE3 DG141x.pdf
DG1413EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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IRF740BPBF irf740b.pdf
IRF740BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Produkt ist nicht verfügbar
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IRF830BPBF irf830b.pdf
IRF830BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
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IRF840BPBF irf840b.pdf
IRF840BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 2229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
50+1.52 EUR
100+1.36 EUR
500+1.09 EUR
1000+1 EUR
2000+0.92 EUR
Mindestbestellmenge: 6
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SIHB10N40D-GE3 sihb10n40d.pdf
SIHB10N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Produkt ist nicht verfügbar
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SIHB8N50D-GE3 sihb8n50d.pdf
SIHB8N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A D2PAK
Produkt ist nicht verfügbar
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SIHP10N40D-GE3 sihp10n40d.pdf
SIHP10N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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SIHP6N40D-GE3 sihp6n40d.pdf
SIHP6N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
50+1.3 EUR
100+1.16 EUR
500+0.91 EUR
Mindestbestellmenge: 7
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SIHU3N50D-GE3 sihu3n50d.pdf
SIHU3N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Produkt ist nicht verfügbar
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SIHU5N50D-GE3 sihu5n50d.pdf
SIHU5N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
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IRFP460BPBF sihg460b.pdf
IRFP460BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP8N50D-GE3 sihp8n50d.pdf
SIHP8N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
50+1.4 EUR
Mindestbestellmenge: 7
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SI4202DY-T1-GE3 si4202dy.pdf
SI4202DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.88 EUR
Mindestbestellmenge: 2500
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SI4288DY-T1-GE3 si4288dy.pdf
SI4288DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
5000+0.59 EUR
7500+0.57 EUR
Mindestbestellmenge: 2500
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SIB410DK-T1-GE3 sib410dk.pdf
SIB410DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 8SO
Produkt ist nicht verfügbar
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SIR876ADP-T1-GE3 sir876adp.pdf
SIR876ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.05 EUR
Mindestbestellmenge: 3000
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