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SIA448DJ-T1-GE3 SIA448DJ-T1-GE3 Vishay Siliconix sia448dj.pdf Description: MOSFET N-CH 20V 12A SC70-6L
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SI3442CDV-T1-GE3 SI3442CDV-T1-GE3 Vishay Siliconix si3442cdv.pdf Description: MOSFET N-CH 20V 8A 6TSOP
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SIHP25N40D-GE3 SIHP25N40D-GE3 Vishay Siliconix sihp25n40d.pdf Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
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SIHG25N40D-E3 SIHG25N40D-E3 Vishay Siliconix sihg25n40d.pdf Description: MOSFET N-CH 400V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
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SIHG14N50D-E3 SIHG14N50D-E3 Vishay Siliconix sihg14n50d.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
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SIHP14N50D-E3 SIHP14N50D-E3 Vishay Siliconix sihp14n50d.pdf Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
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SIR880ADP-T1-GE3 SIR880ADP-T1-GE3 Vishay Siliconix sir880adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V
auf Bestellung 5578 Stücke:
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SI4056DY-T1-GE3 SI4056DY-T1-GE3 Vishay Siliconix si4056dy.pdf Description: MOSFET N-CH 100V 11.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
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SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 Vishay Siliconix sis892adn.pdf Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 6889 Stücke:
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SI7655DN-T1-GE3 SI7655DN-T1-GE3 Vishay Siliconix si7655dn.pdf Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 17687 Stücke:
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SI7615ADN-T1-GE3 SI7615ADN-T1-GE3 Vishay Siliconix si7615adn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
auf Bestellung 28743 Stücke:
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SI4090DY-T1-GE3 SI4090DY-T1-GE3 Vishay Siliconix si4090dy.pdf Description: MOSFET N-CH 100V 19.7A 8SO
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SIA448DJ-T1-GE3 SIA448DJ-T1-GE3 Vishay Siliconix sia448dj.pdf Description: MOSFET N-CH 20V 12A SC70-6L
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SI3442CDV-T1-GE3 SI3442CDV-T1-GE3 Vishay Siliconix si3442cdv.pdf Description: MOSFET N-CH 20V 8A 6TSOP
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SIA448DJ-T1-GE3 SIA448DJ-T1-GE3 Vishay Siliconix sia448dj.pdf Description: MOSFET N-CH 20V 12A SC70-6L
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SI3442CDV-T1-GE3 SI3442CDV-T1-GE3 Vishay Siliconix si3442cdv.pdf Description: MOSFET N-CH 20V 8A 6TSOP
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SIC780ACD-T1-GE3 SIC780ACD-T1-GE3 Vishay Siliconix sic780.pdf Description: IC BUCK ADJ 50A 40MLP
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SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 Vishay Siliconix sia436dj.pdf Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1508 pF @ 4 V
auf Bestellung 9521 Stücke:
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SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 Vishay Siliconix sia436dj.pdf Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1508 pF @ 4 V
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SIHB12N60E-GE3 SIHB12N60E-GE3 Vishay Siliconix sihb12n60.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
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SIHP7N60E-GE3 SIHP7N60E-GE3 Vishay Siliconix sihp7n60e.pdf Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHF7N60E-E3 SIHF7N60E-E3 Vishay Siliconix sihf7n60e.pdf Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHD7N60E-GE3 SIHD7N60E-GE3 Vishay Siliconix sihd7n60e.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 134 Stücke:
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SIHB15N60E-GE3 SIHB15N60E-GE3 Vishay Siliconix sihb15n60e.pdf Description: MOSFET N-CH 600V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 1097 Stücke:
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SIA416DJ-T1-GE3 SIA416DJ-T1-GE3 Vishay Siliconix sia416dj.pdf Description: MOSFET N-CH 100V 11.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
auf Bestellung 9559 Stücke:
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17+1.07 EUR
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100+0.65 EUR
500+0.54 EUR
1000+0.46 EUR
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SIB456DK-T1-GE3 SIB456DK-T1-GE3 Vishay Siliconix sib456dk.pdf Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
auf Bestellung 14155 Stücke:
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27+0.66 EUR
100+0.45 EUR
500+0.36 EUR
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SIA416DJ-T1-GE3 SIA416DJ-T1-GE3 Vishay Siliconix sia416dj.pdf Description: MOSFET N-CH 100V 11.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
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3000+0.41 EUR
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SIB456DK-T1-GE3 SIB456DK-T1-GE3 Vishay Siliconix sib456dk.pdf Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
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6000+0.25 EUR
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SIHG22N50D-GE3 SIHG22N50D-GE3 Vishay Siliconix sihg22n50d.pdf Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP17N60D-E3 SIHP17N60D-E3 Vishay Siliconix sihp17n60d.pdf Description: MOSFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG32N50D-GE3 SIHG32N50D-GE3 Vishay Siliconix sihg32n50d.pdf Description: MOSFET N-CH 500V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Produkt ist nicht verfügbar
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SIHS36N50D-E3 SIHS36N50D-E3 Vishay Siliconix sihs36n50d.pdf Description: MOSFET N-CH 500V 36A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V
Produkt ist nicht verfügbar
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SISA18DN-T1-GE3 SISA18DN-T1-GE3 Vishay Siliconix SISA18DN.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
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SI8812DB-T2-E1 SI8812DB-T2-E1 Vishay Siliconix si8812db.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
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SISA18DN-T1-GE3 SISA18DN-T1-GE3 Vishay Siliconix SISA18DN.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
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SI7623DN-T1-GE3 SI7623DN-T1-GE3 Vishay Siliconix si7623dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
auf Bestellung 2740 Stücke:
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500+1.40 EUR
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SI2333DDS-T1-GE3 SI2333DDS-T1-GE3 Vishay Siliconix si2333dds.pdf Description: MOSFET P-CH 12V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 21526 Stücke:
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SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix si7252dp.pdf Description: MOSFET 2N-CH 100V 36.7A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 31034 Stücke:
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SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix si8817db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
auf Bestellung 7211 Stücke:
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20+0.90 EUR
28+0.64 EUR
100+0.47 EUR
500+0.36 EUR
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SIR642DP-T1-GE3 SIR642DP-T1-GE3 Vishay Siliconix sir462dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
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SI8808DB-T2-E1 SI8808DB-T2-E1 Vishay Siliconix si8808db.pdf Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 2341 Stücke:
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18+1.00 EUR
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SIR826ADP-T1-GE3 SIR826ADP-T1-GE3 Vishay Siliconix sir826adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 1458 Stücke:
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SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix si8802db.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 24677 Stücke:
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18+1.00 EUR
31+0.57 EUR
100+0.31 EUR
1000+0.29 EUR
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SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 Vishay Siliconix si1427ed.pdf Description: MOSFET P-CH 20V 2A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 5726 Stücke:
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SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix si1922edh.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 15191 Stücke:
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SI8812DB-T2-E1 SI8812DB-T2-E1 Vishay Siliconix si8812db.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Produkt ist nicht verfügbar
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SISA18DN-T1-GE3 SISA18DN-T1-GE3 Vishay Siliconix SISA18DN.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
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SI7623DN-T1-GE3 SI7623DN-T1-GE3 Vishay Siliconix si7623dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Produkt ist nicht verfügbar
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SI2333DDS-T1-GE3 SI2333DDS-T1-GE3 Vishay Siliconix si2333dds.pdf Description: MOSFET P-CH 12V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 21000 Stücke:
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3000+0.21 EUR
9000+0.20 EUR
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SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix si7252dp.pdf Description: MOSFET 2N-CH 100V 36.7A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.47 EUR
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SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix si8817db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
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SIR642DP-T1-GE3 SIR642DP-T1-GE3 Vishay Siliconix sir462dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
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SI8808DB-T2-E1 SI8808DB-T2-E1 Vishay Siliconix si8808db.pdf Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Produkt ist nicht verfügbar
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SIR826ADP-T1-GE3 SIR826ADP-T1-GE3 Vishay Siliconix sir826adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Produkt ist nicht verfügbar
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SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix si8802db.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
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SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 Vishay Siliconix si1427ed.pdf Description: MOSFET P-CH 20V 2A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
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SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix si1922edh.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
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SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix si4286dy.pdf Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
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SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix si4286dy.pdf Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SIZ300DT-T1-GE3 SIZ300DT-T1-GE3 Vishay Siliconix siz300dt.pdf Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
Produkt ist nicht verfügbar
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SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
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SI3442CDV-T1-GE3 si3442cdv.pdf
SI3442CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
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SIHP25N40D-GE3 sihp25n40d.pdf
SIHP25N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
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SIHG25N40D-E3 sihg25n40d.pdf
SIHG25N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 255 Stücke:
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3+6.14 EUR
10+4.25 EUR
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SIHG14N50D-E3 sihg14n50d.pdf
SIHG14N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP14N50D-E3 sihp14n50d.pdf
SIHP14N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
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SIR880ADP-T1-GE3 sir880adp.pdf
SIR880ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V
auf Bestellung 5578 Stücke:
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6+3.50 EUR
10+2.48 EUR
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500+1.49 EUR
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SI4056DY-T1-GE3 si4056dy.pdf
SI4056DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
auf Bestellung 10806 Stücke:
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Anzahl Preis
12+1.58 EUR
15+1.21 EUR
100+0.83 EUR
500+0.65 EUR
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SIS892ADN-T1-GE3 sis892adn.pdf
SIS892ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 6889 Stücke:
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9+1.99 EUR
13+1.40 EUR
100+1.09 EUR
500+0.87 EUR
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SI7655DN-T1-GE3 si7655dn.pdf
SI7655DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 17687 Stücke:
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Anzahl Preis
6+3.24 EUR
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500+1.35 EUR
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SI7615ADN-T1-GE3 si7615adn.pdf
SI7615ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
auf Bestellung 28743 Stücke:
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Anzahl Preis
13+1.39 EUR
19+0.98 EUR
100+0.70 EUR
500+0.57 EUR
1000+0.52 EUR
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SI4090DY-T1-GE3 si4090dy.pdf
SI4090DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SO
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SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
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SI3442CDV-T1-GE3 si3442cdv.pdf
SI3442CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
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SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
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SI3442CDV-T1-GE3 si3442cdv.pdf
SI3442CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
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SIC780ACD-T1-GE3 sic780.pdf
SIC780ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 50A 40MLP
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SIA436DJ-T1-GE3 sia436dj.pdf
SIA436DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1508 pF @ 4 V
auf Bestellung 9521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
20+0.88 EUR
100+0.62 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SIA436DJ-T1-GE3 sia436dj.pdf
SIA436DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1508 pF @ 4 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIHB12N60E-GE3 sihb12n60.pdf
SIHB12N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP7N60E-GE3 sihp7n60e.pdf
SIHP7N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHF7N60E-E3 sihf7n60e.pdf
SIHF7N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHD7N60E-GE3 sihd7n60e.pdf
SIHD7N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.20 EUR
100+1.56 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHB15N60E-GE3 sihb15n60e.pdf
SIHB15N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
10+4.38 EUR
100+3.08 EUR
500+2.53 EUR
1000+2.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIA416DJ-T1-GE3 sia416dj.pdf
SIA416DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
auf Bestellung 9559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
19+0.93 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SIB456DK-T1-GE3 sib456dk.pdf
SIB456DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
auf Bestellung 14155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
27+0.66 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SIA416DJ-T1-GE3 sia416dj.pdf
SIA416DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.39 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIB456DK-T1-GE3 sib456dk.pdf
SIB456DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIHG22N50D-GE3 sihg22n50d.pdf
SIHG22N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP17N60D-E3 sihp17n60d.pdf
SIHP17N60D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG32N50D-GE3 sihg32n50d.pdf
SIHG32N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Produkt ist nicht verfügbar
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SIHS36N50D-E3 sihs36n50d.pdf
SIHS36N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 36A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V
Produkt ist nicht verfügbar
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SISA18DN-T1-GE3 SISA18DN.pdf
SISA18DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
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SI8812DB-T2-E1 si8812db.pdf
SI8812DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
32+0.55 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 22
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SISA18DN-T1-GE3 SISA18DN.pdf
SISA18DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
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SI7623DN-T1-GE3 si7623dn.pdf
SI7623DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
auf Bestellung 2740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
10+2.13 EUR
100+1.65 EUR
500+1.40 EUR
1000+1.14 EUR
Mindestbestellmenge: 7
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SI2333DDS-T1-GE3 si2333dds.pdf
SI2333DDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 21526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
29+0.62 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 19
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SI7252DP-T1-GE3 si7252dp.pdf
SI7252DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 36.7A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 31034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.17 EUR
100+2.18 EUR
500+1.76 EUR
1000+1.63 EUR
Mindestbestellmenge: 4
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SI8817DB-T2-E1 si8817db.pdf
SI8817DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
auf Bestellung 7211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
28+0.64 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.30 EUR
Mindestbestellmenge: 20
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SIR642DP-T1-GE3 sir462dp.pdf
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
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SI8808DB-T2-E1 si8808db.pdf
SI8808DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 2341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
27+0.68 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 18
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SIR826ADP-T1-GE3 sir826adp.pdf
SIR826ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.33 EUR
10+3.47 EUR
100+2.41 EUR
500+1.96 EUR
1000+1.81 EUR
Mindestbestellmenge: 4
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SI8802DB-T2-E1 si8802db.pdf
SI8802DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 24677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
31+0.57 EUR
100+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 18
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SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 5726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
31+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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SI1922EDH-T1-GE3 si1922edh.pdf
SI1922EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 15191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.30 EUR
Mindestbestellmenge: 16
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SI8812DB-T2-E1 si8812db.pdf
SI8812DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Produkt ist nicht verfügbar
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SISA18DN-T1-GE3 SISA18DN.pdf
SISA18DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
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SI7623DN-T1-GE3 si7623dn.pdf
SI7623DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Produkt ist nicht verfügbar
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SI2333DDS-T1-GE3 si2333dds.pdf
SI2333DDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
9000+0.20 EUR
15000+0.19 EUR
Mindestbestellmenge: 3000
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SI7252DP-T1-GE3 si7252dp.pdf
SI7252DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 36.7A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.47 EUR
Mindestbestellmenge: 3000
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SI8817DB-T2-E1 si8817db.pdf
SI8817DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.22 EUR
Mindestbestellmenge: 3000
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SIR642DP-T1-GE3 sir462dp.pdf
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
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SI8808DB-T2-E1 si8808db.pdf
SI8808DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Produkt ist nicht verfügbar
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SIR826ADP-T1-GE3 sir826adp.pdf
SIR826ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Produkt ist nicht verfügbar
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SI8802DB-T2-E1 si8802db.pdf
SI8802DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
15000+0.19 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000
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SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
Mindestbestellmenge: 3000
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SI1922EDH-T1-GE3 si1922edh.pdf
SI1922EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.23 EUR
9000+0.22 EUR
15000+0.21 EUR
Mindestbestellmenge: 3000
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SI4286DY-T1-GE3 si4286dy.pdf
SI4286DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4286DY-T1-GE3 si4286dy.pdf
SI4286DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SIZ300DT-T1-GE3 siz300dt.pdf
SIZ300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
Produkt ist nicht verfügbar
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