Die Produkte vishay siliconix

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IRF9Z24STRR IRF9Z24STRR sihf9z24.pdf Vishay Siliconix Description: MOSFET P-CH 60V 11A D2PAK
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z24STRL IRF9Z24STRL sihf9z24.pdf Vishay Siliconix Description: MOSFET P-CH 60V 11A D2PAK
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1012R-T1-GE3 SI1012R-T1-GE3 71166.pdf Vishay Siliconix Description: MOSFET N-CH 20V 500MA SC-75A
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Package / Case: SC-75A
Base Part Number: SI1012
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-75A
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
auf Bestellung 89926 Stücke
Lieferzeit 21-28 Tag (e)
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SI4128DY-T1-GE3 SI4128DY-T1-GE3 si4128dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 10.9A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5197 Stücke
Lieferzeit 21-28 Tag (e)
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SI4128DY-T1-E3 SI4128DY-T1-E3 si4128dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4128
auf Bestellung 4950 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2640 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 10.9A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
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SI4128BDY-T1-GE3 SI4128BDY.pdf Vishay Siliconix Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5936DU-T1-GE3 SI5936DU-T1-GE3 si5936du.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6A PWRPK CHPFET
Base Part Number: SI5936
Supplier Device Package: PowerPAK® ChipFet Dual
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 3295 Stücke
Lieferzeit 21-28 Tag (e)
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IRFD120PBF IRFD120PBF sihfd120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.3A 4DIP
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1989 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8966 Stücke - Preis und Lieferfrist anzeigen
8+ 3.59 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.07 EUR
1000+ 1.63 EUR
SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 si1539cdl.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V SOT363
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SI1539
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66000000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N/P-CH 30V SOT363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Base Part Number: SI1539
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 45276 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 66000000 Stücke - Preis und Lieferfrist anzeigen
SI2399DS-T1-GE3 SI2399DS-T1-GE3 si2399ds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6A SOT-23
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 2155 Stücke
Lieferzeit 21-28 Tag (e)
SI3458BDV-T1-E3 SI3458BDV-T1-E3 si3458bd.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6746 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2156 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 si3458bd.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1621 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6 Stücke - Preis und Lieferfrist anzeigen
SI7852DP-T1-E3 SI7852DP-T1-E3 si7852dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7852
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 31431 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 53623 Stücke - Preis und Lieferfrist anzeigen
SI2302CDS-T1-E3 SI2302CDS-T1-E3 si2302cds.pdf Vishay Siliconix Description: Description: MOSFET N-CH 20V 2.6A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI2302
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI2302
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 si2302cds.pdf Vishay Siliconix Description: MOSFET N-CH 20V 2.6A SOT23-3
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 2.6A SOT23-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 38149 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
SI2302ADS-T1-E3 SI2302ADS-T1-E3 si2302ad.pdf Vishay Siliconix Description: MOSFET N-CH 20V 2.1A SOT23-3
Vgs (Max): ±8V
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Power Dissipation (Max): 700mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 398865 Stücke - Preis und Lieferfrist anzeigen
SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 73234.pdf Vishay Siliconix Description: MOSFET N-CH 30V 3.16A SOT23-3
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1662 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 602 Stücke - Preis und Lieferfrist anzeigen
IRF9510STRLPBF IRF9510STRLPBF 91073.pdf Vishay Siliconix Description: MOSFET P-CH 100V 4A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
auf Bestellung 17632 Stücke
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IRFBC40ASTRLPBF IRFBC40ASTRLPBF sihfbc40.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
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IRFBC40STRLPBF IRFBC40STRLPBF 91116.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A D2PAK
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI7415DN-T1-E3 SI7415DN-T1-E3 71691.pdf Vishay Siliconix Description: MOSFET P-CH 60V 3.6A 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7415
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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SI7613DN-T1-GE3 SI7613DN-T1-GE3 si7613dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35A 1212-8 PPAK
Base Part Number: SI7613
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI7423DN-T1-E3 SI7423DN-T1-E3 72582.pdf Vishay Siliconix Description: MOSFET P-CH 30V 7.4A 1212-8
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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IRF9630STRLPBF IRF9630STRLPBF IRF9630S_SiHF9630S.pdf Vishay Siliconix Description: MOSFET P-CH 200V 6.5A D2PAK
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQJA06EP-T1_GE3 SQJA06EP-T1_GE3 sqja06ep.pdf Vishay Siliconix Description: MOSFET N-CH 60V 57A POWERPAKSO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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IRF9520STRLPBF IRF9520STRLPBF 91075.pdf Vishay Siliconix Description: MOSFET P-CH 100V 6.8A D2PAK
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI7172ADP-T1-RE3 SI7172ADP-T1-RE3 si7172adp.pdf Vishay Siliconix Description: MOSFET N-CHAN 200V POWERPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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IRFD110PBF IRFD110PBF sihfd110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
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6+ 4.65 EUR
10+ 4.18 EUR
100+ 3.36 EUR
500+ 2.76 EUR
1000+ 2.37 EUR
IRFP460PBF IRFP460PBF 91237.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFP460BPBF IRFP460BPBF sihg460b.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
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IRFP460LCPBF IRFP460LCPBF 91235.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP32N50KPBF IRFP32N50KPBF 91221.pdf Vishay Siliconix Description: MOSFET N-CH 500V 32A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2315ES-T1_GE3 SQ2315ES-T1_GE3 sq2315es.pdf Vishay Siliconix Description: MOSFET P-CHAN 12V SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
Vgs (Max): ±8V
Base Part Number: SQ2315
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG2525DN-T1-GE4 DG2525DN-T1-GE4 dg2525.pdf Vishay Siliconix Description: IC SWITCH DPDT DUAL 16MINIQFN
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -61dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Charge Injection: -19pC
-3db Bandwidth: 310MHz
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 50mOhm
On-State Resistance (Max): 500mOhm
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SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 sihj7n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V POWERPAK SO-8L
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIHJ7
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI2325DS-T1-GE3 SI2325DS-T1-GE3 73238.pdf Vishay Siliconix Description: MOSFET P-CH 150V 0.53A SOT-23
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2325
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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SI1315DL-T1-GE3 SI1315DL-T1-GE3 si1315dl.pdf Vishay Siliconix Description: MOSFET P-CH 8V 0.9A SC70-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 112pF @ 4V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Base Part Number: SI1315
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG611EEY-T1-GE4 DG611EEY-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -74dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Charge Injection: 1.4pC
-3db Bandwidth: 1GHz
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 115Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIZ710DT-T1-GE3 SIZ710DT-T1-GE3 siz710dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 16A POWERPAIR
Base Part Number: SIZ710
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
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DG301BDJ-E3 DG301BDJ-E3 71402.pdf Vishay Siliconix Description: IC SWITCH CMOS 14DIP
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 5nA
Number of Circuits: 1
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Supplier Device Package: 14-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG3015DB-T2-E1 dg3015.pdf Vishay Siliconix Description: IC SWITCH LV DUAL 16MICRO FOOT
Voltage - Supply, Single (V+): 2.7V ~ 3.3V
Supplier Device Package: 16-Micro Foot™ (2x2)
On-State Resistance (Max): 1.2Ohm
Number of Circuits: 2
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 67pF
Switch Time (Ton, Toff) (Max): 65ns, 60ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -70dB @ 1MHz
Charge Injection: 7pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG301AAA DG300A_MIL301A_MIL302A_MIL.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST TO100-10
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Package / Case: TO-100-10 Metal Can
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Packaging: Tube
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAA/883 DG300A_MIL301A_MIL302A_MIL.pdf Vishay Siliconix Description: IC SWITCH SPST TO100-10
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: TO-100-10 Metal Can
Packaging: Tube
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAK DG301AAK DG300A_MIL301A_MIL302A_MIL.pdf Vishay Siliconix Description: IC SWITCH SPST 14CERDIP
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Supplier Device Package: 14-CERDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 14-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAK/883 DG301AAK/883 DG300A_MIL301A_MIL302A_MIL.pdf Vishay Siliconix Description: IC SWITCH SPST 14CERDIP
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-CERDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Package / Case: 14-CDIP (0.300", 7.62mm)
Packaging: Tube
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAZ/883 Vishay Siliconix Description: IC SWITCH SPST 20LCC
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 20-LCC
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LCC
Packaging: Tube
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG301ABA MAXMS08746-1.pdf?t.download=true&u=5oefqw Vishay Siliconix Description: IC SWITCH SPST TO100-10
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301ABK DG301ABK MAXMS08746-1.pdf?t.download=true&u=5oefqw Vishay Siliconix Description: IC SWITCH SPST 14CERDIP
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-CERDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 14-CDIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301BDJ 71402.pdf Vishay Siliconix Description: IC SWITCH CMOS 14DIP
Number of Circuits: 1
Part Status: Obsolete
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2366DS-T1-GE3 SI2366DS-T1-GE3 si2366ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 5.8A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9812 Stücke
Lieferzeit 21-28 Tag (e)
SUP80090E-GE3 SUP80090E-GE3 sup80090e.pdf Vishay Siliconix Description: MOSFET N-CH 150V 128A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3425pF @ 75V
Vgs (Max): ±20V
Base Part Number: SUP80090
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
DG467DV-T1-E3 DG467DV-T1-E3 dg467.pdf Vishay Siliconix Description: IC SWITCH SPST 6TSOP
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG467
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Charge Injection: 21pC
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Voltage - Supply, Single (V+): 7V ~ 36V
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Lieferzeit 21-28 Tag (e)
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SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 si3473cd.pdf Vishay Siliconix Description: MOSFET P-CH 12V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 26582 Stücke
Lieferzeit 21-28 Tag (e)
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IRF820STRRPBF IRF820STRRPBF sihf820s.pdf Vishay Siliconix Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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IRF820STRLPBF IRF820STRLPBF sihf820s.pdf Vishay Siliconix Description: MOSFET N-CH 500V 2.5A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
auf Bestellung 585 Stücke
Lieferzeit 21-28 Tag (e)
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IRF1405ZTRL IRF1405ZTRL irf1405z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 75A TO220AB
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF1405ZTRR IRF1405ZTRR irf1405z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 75A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP140PBF IRFP140PBF 91202.pdf Vishay Siliconix Description: MOSFET N-CH 100V 31A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS9N60ATRRPBF IRFS9N60ATRRPBF sihs9n60.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFS9
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
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IRFS9N60ATRLPBF IRFS9N60ATRLPBF sihs9n60.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
IRF9620STRLPBF IRF9620STRLPBF 91083.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.5A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 470 Stücke
Lieferzeit 21-28 Tag (e)
IRFP064PBF IRFP064PBF 91201.pdf Vishay Siliconix Description: MOSFET N-CH 60V 70A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9024TRLPBF IRFR9024TRLPBF sihfr902.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET P-CH 60V 8.8A DPAK
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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6+ 5.02 EUR
10+ 4.51 EUR
100+ 3.62 EUR
500+ 2.98 EUR
1000+ 2.55 EUR
Vishay Siliconix Description: MOSFET P-CH 60V 8.8A DPAK
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2898 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
SIHP21N60EF-GE3 SIHP21N60EF-GE3 sihp21n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220AB
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB21N60EF-GE3 SIHB21N60EF-GE3 sihb21n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO263AB
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 388 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.95 EUR
10+ 9.85 EUR
100+ 8.07 EUR
SIHH21N60E-T1-GE3 SIHH21N60E-T1-GE3 sihh21n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 20A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 600V 20A POWERPAK8X8
Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIHG21N60EF-GE3 SIHG21N60EF-GE3 sihg21n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 148 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.73 EUR
10+ 10.53 EUR
100+ 8.63 EUR
SIHH21N60EF-T1-GE3 SIHH21N60EF-T1-GE3 sihh21n60ef.pdf Vishay Siliconix Description: MOSFET N-CHAN 600V 19A POWERPAK
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 174W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2035pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
SI3483DDV-T1-GE3 SI3483DDV-T1-GE3 si3483ddv.pdf Vishay Siliconix Description: P-CHANNEL 30-V (D-S) MOSFET TSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3483
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 5173 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7893 Stücke - Preis und Lieferfrist anzeigen
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 sia817edj.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 29679 Stücke
Lieferzeit 21-28 Tag (e)
IRFBC30ASTRLPBF IRFBC30ASTRLPBF 91109.pdf Vishay Siliconix Description: MOSFET N-CH 600V 3.6A D2PAK
Power Dissipation (Max): 74W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 789 Stücke - Preis und Lieferfrist anzeigen
IRFBC30STRLPBF IRFBC30STRLPBF 91111.pdf Vishay Siliconix Description: MOSFET N-CH 600V 3.6A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 780 Stücke
Lieferzeit 21-28 Tag (e)
2N7002K-T1-E3 2N7002K-T1-E3 2n7002k.pdf Vishay Siliconix Description: MOSFET N-CH 60V 300MA SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Base Part Number: 2N7002
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
auf Bestellung 445119 Stücke
Lieferzeit 21-28 Tag (e)
IRF540PBF IRF540PBF 91021.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A TO220AB
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55 Stücke - Preis und Lieferfrist anzeigen
IRF540SPBF IRF540SPBF sihf540s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
IRF540STRRPBF IRF540STRRPBF sihf540s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
auf Bestellung 649 Stücke
Lieferzeit 21-28 Tag (e)
IRF540STRLPBF IRF540STRLPBF sihf540s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11718 Stücke - Preis und Lieferfrist anzeigen
800+ 3.65 EUR
1600+ 3.13 EUR
Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
auf Bestellung 2399 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11718 Stücke - Preis und Lieferfrist anzeigen
5+ 6.16 EUR
10+ 5.53 EUR
100+ 4.45 EUR
Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 1609 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11718 Stücke - Preis und Lieferfrist anzeigen
IRF540 IRF540 91021.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A TO220AB
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7490 Stücke - Preis und Lieferfrist anzeigen
IRF540S IRF540S sihf540s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF540STRL IRF540STRL IRF540S,%20SiHF540S.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF540STRR IRF540STRR sihf540s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF540L IRF540L 91021.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A TO262
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR320TRLPBF IRFR320TRLPBF sihfr320.pdf Vishay Siliconix Description: MOSFET N-CH 400V 3.1A DPAK
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
auf Bestellung 1663 Stücke
Lieferzeit 21-28 Tag (e)
IRFR320TRPBF IRFR320TRPBF sihfr320.pdf Vishay Siliconix Description: MOSFET N-CH 400V 3.1A DPAK
Base Part Number: IRFR320
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 7062 Stücke
Lieferzeit 21-28 Tag (e)
SIR626LDP-T1-RE3 SIR626LDP-T1-RE3 sir626ldp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 45.6A/186A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 30V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR626
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 45.6A/186A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 30V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR626
auf Bestellung 11651 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CHAN 60-V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 30V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 5831 Stücke
Lieferzeit 21-28 Tag (e)
IRF9Z24STRR sihf9z24.pdf
IRF9Z24STRR
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 11A D2PAK
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z24STRL sihf9z24.pdf
IRF9Z24STRL
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 11A D2PAK
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1012R-T1-GE3 71166.pdf
SI1012R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC-75A
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Package / Case: SC-75A
Base Part Number: SI1012
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-75A
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
auf Bestellung 89926 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52646 Stücke - Preis und Lieferfrist anzeigen
SI4128DY-T1-GE3 si4128dy.pdf
SI4128DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5197 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4084 Stücke - Preis und Lieferfrist anzeigen
SI4128DY-T1-E3 si4128dy.pdf
SI4128DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4128
auf Bestellung 4950 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5140 Stücke - Preis und Lieferfrist anzeigen
SI4128DY-T1-E3 si4128dy.pdf
SI4128DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7590 Stücke - Preis und Lieferfrist anzeigen
SI4128BDY-T1-GE3 SI4128BDY.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5936DU-T1-GE3 si5936du.pdf
SI5936DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PWRPK CHPFET
Base Part Number: SI5936
Supplier Device Package: PowerPAK® ChipFet Dual
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 3295 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 374 Stücke - Preis und Lieferfrist anzeigen
IRFD120PBF sihfd120.pdf
IRFD120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1989 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8966 Stücke - Preis und Lieferfrist anzeigen
8+ 3.59 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.07 EUR
1000+ 1.63 EUR
SI1539CDL-T1-GE3 si1539cdl.pdf
SI1539CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SOT363
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SI1539
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66045276 Stücke - Preis und Lieferfrist anzeigen
SI1539CDL-T1-GE3 si1539cdl.pdf
SI1539CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SOT363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Base Part Number: SI1539
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 45276 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 66000000 Stücke - Preis und Lieferfrist anzeigen
SI2399DS-T1-GE3 si2399ds.pdf
SI2399DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A SOT-23
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 2155 Stücke
Lieferzeit 21-28 Tag (e)
SI3458BDV-T1-E3 si3458bd.pdf
SI3458BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6746 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2156 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-GE3 si3458bd.pdf
SI3458BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1621 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6 Stücke - Preis und Lieferfrist anzeigen
SI7852DP-T1-E3 si7852dp.pdf
SI7852DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7852
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 31431 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 53623 Stücke - Preis und Lieferfrist anzeigen
SI2302CDS-T1-E3 si2302cds.pdf
SI2302CDS-T1-E3
Hersteller: Vishay Siliconix
Description: Description: MOSFET N-CH 20V 2.6A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI2302
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI2302
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2302CDS-T1-GE3 si2302cds.pdf
SI2302CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2302CDS-T1-GE3 si2302cds.pdf
SI2302CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
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SI2302ADS-T1-E3 si2302ad.pdf
SI2302ADS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Vgs (Max): ±8V
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Power Dissipation (Max): 700mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2306BDS-T1-GE3 73234.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
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IRF9510STRLPBF 91073.pdf
IRF9510STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 4A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
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IRFBC40ASTRLPBF sihfbc40.pdf
IRFBC40ASTRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
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Lieferzeit 21-28 Tag (e)
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IRFBC40STRLPBF 91116.pdf
IRFBC40STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI7415DN-T1-E3 71691.pdf
SI7415DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7415
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
auf Bestellung 43993 Stücke
Lieferzeit 21-28 Tag (e)
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SI7613DN-T1-GE3 si7613dn.pdf
SI7613DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8 PPAK
Base Part Number: SI7613
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5422 Stücke
Lieferzeit 21-28 Tag (e)
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SI7423DN-T1-E3 72582.pdf
SI7423DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A 1212-8
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
IRF9630STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 62 Stücke
Lieferzeit 21-28 Tag (e)
SQJA06EP-T1_GE3 sqja06ep.pdf
SQJA06EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 57A POWERPAKSO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2865 Stücke
Lieferzeit 21-28 Tag (e)
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IRF9520STRLPBF 91075.pdf
IRF9520STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI7172ADP-T1-RE3 si7172adp.pdf
SI7172ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 200V POWERPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8046 Stücke
Lieferzeit 21-28 Tag (e)
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IRFD110PBF sihfd110.pdf
IRFD110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
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6+ 4.65 EUR
10+ 4.18 EUR
100+ 3.36 EUR
500+ 2.76 EUR
1000+ 2.37 EUR
IRFP460PBF 91237.pdf
IRFP460PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFP460BPBF sihg460b.pdf
IRFP460BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP460LCPBF 91235.pdf
IRFP460LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP32N50KPBF 91221.pdf
IRFP32N50KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 32A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2315ES-T1_GE3 sq2315es.pdf
SQ2315ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 12V SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
Vgs (Max): ±8V
Base Part Number: SQ2315
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 318 Stücke
Lieferzeit 21-28 Tag (e)
DG2525DN-T1-GE4 dg2525.pdf
DG2525DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT DUAL 16MINIQFN
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -61dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Charge Injection: -19pC
-3db Bandwidth: 310MHz
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 50mOhm
On-State Resistance (Max): 500mOhm
auf Bestellung 2801 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2232 Stücke - Preis und Lieferfrist anzeigen
SIHJ7N65E-T1-GE3 sihj7n65e.pdf
SIHJ7N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V POWERPAK SO-8L
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIHJ7
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3037 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6022 Stücke - Preis und Lieferfrist anzeigen
SI2325DS-T1-GE3 73238.pdf
SI2325DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 0.53A SOT-23
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2325
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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Lieferzeit 21-28 Tag (e)
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SI1315DL-T1-GE3 si1315dl.pdf
SI1315DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.9A SC70-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 112pF @ 4V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Base Part Number: SI1315
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG611EEY-T1-GE4 dg611e.pdf
DG611EEY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -74dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Charge Injection: 1.4pC
-3db Bandwidth: 1GHz
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 115Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2465 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1840 Stücke - Preis und Lieferfrist anzeigen
SIZ710DT-T1-GE3 siz710dt.pdf
SIZ710DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A POWERPAIR
Base Part Number: SIZ710
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
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Lieferzeit 21-28 Tag (e)
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DG301BDJ-E3 71402.pdf
DG301BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14DIP
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 5nA
Number of Circuits: 1
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Supplier Device Package: 14-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG3015DB-T2-E1 dg3015.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH LV DUAL 16MICRO FOOT
Voltage - Supply, Single (V+): 2.7V ~ 3.3V
Supplier Device Package: 16-Micro Foot™ (2x2)
On-State Resistance (Max): 1.2Ohm
Number of Circuits: 2
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 67pF
Switch Time (Ton, Toff) (Max): 65ns, 60ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -70dB @ 1MHz
Charge Injection: 7pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG301AAA DG300A_MIL301A_MIL302A_MIL.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST TO100-10
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Package / Case: TO-100-10 Metal Can
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Packaging: Tube
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAA/883 DG300A_MIL301A_MIL302A_MIL.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST TO100-10
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: TO-100-10 Metal Can
Packaging: Tube
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAK DG300A_MIL301A_MIL302A_MIL.pdf
DG301AAK
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 14CERDIP
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Supplier Device Package: 14-CERDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 14-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAK/883 DG300A_MIL301A_MIL302A_MIL.pdf
DG301AAK/883
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 14CERDIP
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-CERDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Package / Case: 14-CDIP (0.300", 7.62mm)
Packaging: Tube
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301AAZ/883
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 20LCC
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 20-LCC
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LCC
Packaging: Tube
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG301ABA MAXMS08746-1.pdf?t.download=true&u=5oefqw
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST TO100-10
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301ABK MAXMS08746-1.pdf?t.download=true&u=5oefqw
DG301ABK
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 14CERDIP
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-CERDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 14-CDIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG301BDJ 71402.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14DIP
Number of Circuits: 1
Part Status: Obsolete
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2366DS-T1-GE3 si2366ds.pdf
SI2366DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9812 Stücke
Lieferzeit 21-28 Tag (e)
SUP80090E-GE3 sup80090e.pdf
SUP80090E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 128A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3425pF @ 75V
Vgs (Max): ±20V
Base Part Number: SUP80090
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 818 Stücke
Lieferzeit 21-28 Tag (e)
DG467DV-T1-E3 dg467.pdf
DG467DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 6TSOP
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG467
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Charge Injection: 21pC
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Voltage - Supply, Single (V+): 7V ~ 36V
auf Bestellung 8209 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1368 Stücke - Preis und Lieferfrist anzeigen
SI3473CDV-T1-GE3 si3473cd.pdf
SI3473CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 26582 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33025 Stücke - Preis und Lieferfrist anzeigen
IRF820STRRPBF sihf820s.pdf
IRF820STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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IRF820STRLPBF sihf820s.pdf
IRF820STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
auf Bestellung 585 Stücke
Lieferzeit 21-28 Tag (e)
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IRF1405ZTRL irf1405z.pdf
IRF1405ZTRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 75A TO220AB
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF1405ZTRR irf1405z.pdf
IRF1405ZTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 75A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP140PBF 91202.pdf
IRFP140PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 31A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFS9
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
auf Bestellung 2397 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
IRFS9N60ATRLPBF sihs9n60.pdf
IRFS9N60ATRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 734 Stücke
Lieferzeit 21-28 Tag (e)
IRF9620STRLPBF 91083.pdf
IRF9620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 470 Stücke
Lieferzeit 21-28 Tag (e)
IRFP064PBF 91201.pdf
IRFP064PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 70A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9024TRLPBF sihfr902.pdf
IRFR9024TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5168 Stücke - Preis und Lieferfrist anzeigen
IRFR9024TRLPBF sihfr902.pdf
IRFR9024TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1022 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4146 Stücke - Preis und Lieferfrist anzeigen
6+ 5.02 EUR
10+ 4.51 EUR
100+ 3.62 EUR
500+ 2.98 EUR
1000+ 2.55 EUR
IRFR9024TRLPBF sihfr902.pdf
IRFR9024TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2898 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2270 Stücke - Preis und Lieferfrist anzeigen
SIHP21N60EF-GE3 sihp21n60ef.pdf
SIHP21N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB21N60EF-GE3 sihb21n60ef.pdf
SIHB21N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263AB
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 388 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.95 EUR
10+ 9.85 EUR
100+ 8.07 EUR
SIHH21N60E-T1-GE3 sihh21n60e.pdf
SIHH21N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIHH21N60E-T1-GE3 sihh21n60e.pdf
SIHH21N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A POWERPAK8X8
Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH21
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIHG21N60EF-GE3 sihg21n60ef.pdf
SIHG21N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 148 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.73 EUR
10+ 10.53 EUR
100+ 8.63 EUR
SIHH21N60EF-T1-GE3 sihh21n60ef.pdf
SIHH21N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 600V 19A POWERPAK
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 174W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2035pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
SI3483DDV-T1-GE3 si3483ddv.pdf
SI3483DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET TSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3483
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Vgs (Max): +16V, -20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 5173 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7893 Stücke - Preis und Lieferfrist anzeigen
SIA817EDJ-T1-GE3 sia817edj.pdf
SIA817EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 29679 Stücke
Lieferzeit 21-28 Tag (e)
IRFBC30ASTRLPBF 91109.pdf
IRFBC30ASTRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A D2PAK
Power Dissipation (Max): 74W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 789 Stücke - Preis und Lieferfrist anzeigen
IRFBC30STRLPBF 91111.pdf
IRFBC30STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 780 Stücke
Lieferzeit 21-28 Tag (e)
2N7002K-T1-E3 2n7002k.pdf
2N7002K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 300MA SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Base Part Number: 2N7002
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
auf Bestellung 445119 Stücke
Lieferzeit 21-28 Tag (e)
IRF540PBF 91021.pdf
IRF540PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55 Stücke - Preis und Lieferfrist anzeigen
IRF540SPBF sihf540s.pdf
IRF540SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
IRF540STRRPBF sihf540s.pdf
IRF540STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 649 Stücke - Preis und Lieferfrist anzeigen
IRF540STRRPBF sihf540s.pdf
IRF540STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
auf Bestellung 649 Stücke
Lieferzeit 21-28 Tag (e)
IRF540STRLPBF sihf540s.pdf
IRF540STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15726 Stücke - Preis und Lieferfrist anzeigen
800+ 3.65 EUR
1600+ 3.13 EUR
IRF540STRLPBF sihf540s.pdf
IRF540STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
auf Bestellung 2399 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14927 Stücke - Preis und Lieferfrist anzeigen
5+ 6.16 EUR
10+ 5.53 EUR
100+ 4.45 EUR
IRF540STRLPBF sihf540s.pdf
IRF540STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 1609 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15717 Stücke - Preis und Lieferfrist anzeigen
IRF540 91021.pdf
IRF540
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7490 Stücke - Preis und Lieferfrist anzeigen
IRF540S sihf540s.pdf
IRF540S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF540STRL IRF540S,%20SiHF540S.pdf
IRF540STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF540STRR sihf540s.pdf
IRF540STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF540L 91021.pdf
IRF540L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO262
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR320TRLPBF sihfr320.pdf
IRFR320TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A DPAK
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
auf Bestellung 1663 Stücke
Lieferzeit 21-28 Tag (e)
IRFR320TRPBF sihfr320.pdf
IRFR320TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A DPAK
Base Part Number: IRFR320
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 7062 Stücke
Lieferzeit 21-28 Tag (e)
SIR626LDP-T1-RE3 sir626ldp.pdf
SIR626LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 30V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR626
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17482 Stücke - Preis und Lieferfrist anzeigen
SIR626LDP-T1-RE3 sir626ldp.pdf
SIR626LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 30V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR626
auf Bestellung 11651 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11831 Stücke - Preis und Lieferfrist anzeigen
SIR626LDP-T1-RE3 sir626ldp.pdf
SIR626LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 60-V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 30V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 5831 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17651 Stücke - Preis und Lieferfrist anzeigen
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