Die Produkte vishay siliconix

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SI7457DP-T1-GE3 SI7457DP-T1-GE3 si7457dp.pdf Vishay Siliconix Description: MOSFET P-CH 100V 28A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7846DP-T1-GE3 SI7846DP-T1-GE3 71442.pdf Vishay Siliconix Description: MOSFET N-CH 150V 4A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7860DP-T1-GE3 SI7860DP-T1-GE3 71854.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD40N04-10A-GE3 SQD40N04-10A-GE3 sqd40n04.pdf Vishay Siliconix Description: MOSFET N-CH D-S 40V 42A TO252
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Power - Max: 71W
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
SQD50P04-09L-GE3 SQD50P04-09L-GE3 sqd50p04.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 136W
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-13L-GE3 SQD50P04-13L-GE3 sqd50p04-13l.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P06-15L_GE3 SQD50P06-15L_GE3 sqd50p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 50A TO252
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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auf Bestellung 4667 Stücke - Preis und Lieferfrist anzeigen
SQJ461EP-T1-GE3 SQJ461EP-T1-GE3 sqj461ep.pdf Vishay Siliconix Description: MOSFET P-CH 60V 30A 8-SO
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 4710pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ469EP-T1_GE3 SQJ469EP-T1_GE3 sqj469ep.pdf Vishay Siliconix Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ469
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10070 Stücke - Preis und Lieferfrist anzeigen
SUD50P10-43-E3 SUD50P10-43-E3 73445.pdf Vishay Siliconix Description: MOSFET P-CH 100V 38A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Operating Temperature: -50°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR826DP-T1-GE3 SIR826DP-T1-GE3 sir826dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR826
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR826
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
auf Bestellung 3855 Stücke
Lieferzeit 21-28 Tag (e)
IRFD9123 IRFD9123 HRISD017-5-100.pdf?t.download=true&u=5oefqw Vishay Siliconix Description: MOSFET P-CH 100V 1A 4-DIP
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube
Mounting Type: Through Hole
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18527 Stücke - Preis und Lieferfrist anzeigen
SQ4401DY-T1-GE3 SQ4401DY-T1-GE3 sq4401dy.pdf Vishay Siliconix Description: MOSFET P-CH 40V 15.8A 8SOIC
Supplier Device Package: 8-SOIC N
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 6W
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF12N60E-GE3 SIHF12N60E-GE3 sihf12n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 12A TO220
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 383 Stücke - Preis und Lieferfrist anzeigen
SI4888DY-T1-GE3 SI4888DY-T1-GE3 71336.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7342DP-T1-GE3 SI7342DP-T1-GE3 si7342dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 9A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD35N05-26L-GE3 SQD35N05-26L-GE3 sqd35n05.pdf Vishay Siliconix Description: MOSFET N-CH 55V 30A TO252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510 IRL510 Vishay Siliconix Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
SI7370DP-T1-GE3 SI7370DP-T1-GE3 71874.pdf Vishay Siliconix Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2531 Stücke - Preis und Lieferfrist anzeigen
SQ4470EY-T1-GE3 SQ4470EY-T1-GE3 sq4470ey.pdf Vishay Siliconix Description: MOSFET N-CH 60V 16A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 7.1W
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD19N20-90-T4-E3 SUD19N20-90-T4-E3 71767.pdf Vishay Siliconix Description: MOSFET N-CH 200V 19A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
SUD35N10-26P-E3 SUD35N10-26P-E3 sud35n10-26p.pdf Vishay Siliconix Description: MOSFET N-CH 100V 35A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9530STRRPBF IRF9530STRRPBF sihf9530.pdf Vishay Siliconix Description: MOSFET P-CH 100V 12A D2PAK
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
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SQM100N04-3M5-GE3 sqm100n0.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 157W
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263
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SI4472DY-T1-E3 SI4472DY-T1-E3 si4472dy.pdf Vishay Siliconix Description: MOSFET N-CH 150V 7.7A 8-SOIC
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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Vishay Siliconix Description: MOSFET N-CH 150V 7.7A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
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Vishay Siliconix Description: MOSFET N-CH 150V 7.7A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
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IRLR014TR IRLR014TR sihlr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
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IRLR014TRL IRLR014TRL sihlr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SI7491DP-T1-GE3 SI7491DP-T1-GE3 72276.pdf Vishay Siliconix Description: MOSFET P-CH 30V 11A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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IRF9620STRLPBF IRF9620STRLPBF sihf9620.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.5A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFD220 IRFD220 sihfd220.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 200V 800MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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IRLR110 IRLR110 sihlr110.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRLR110TR IRLR110TR sihlr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRLR110TRL IRLR110TRL sihlr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
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IRLU110 IRLU110 sihlr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A TO251AA
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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IRFBC20LPBF IRFBC20LPBF 91107.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2.2A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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IRF734 IRF734 IRF734,%20SiHF734.pdf Vishay Siliconix Description: MOSFET N-CH 450V 4.9A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: IRF734
Power Dissipation (Max): 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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IRF710 IRF710 91041.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 400V 2A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Mounting Type: Through Hole
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Power Dissipation (Max): 36W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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SIHP14N50D-GE3 SIHP14N50D-GE3 sihp14n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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SIE876DF-T1-GE3 SIE876DF-T1-GE3 sie876df.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
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Vishay Siliconix Description: MOSFET N-CH 60V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
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SI4876DY-T1-E3 SI4876DY-T1-E3 71312.pdf Vishay Siliconix Description: MOSFET N-CH 20V 14A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI4876DY-T1-GE3 SI4876DY-T1-GE3 71312.pdf Vishay Siliconix Description: MOSFET N-CH 20V 14A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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SI7148DP-T1-GE3 SI7148DP-T1-GE3 73314.pdf Vishay Siliconix Description: MOSFET N-CH 75V 28A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 96W
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
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SI7356ADP-T1-E3 SI7356ADP-T1-E3 si7356ad.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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SI7356ADP-T1-GE3 SI7356ADP-T1-GE3 si7356ad.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
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SQJ463EP-T1-GE3 SQJ463EP-T1-GE3 sqj463ep.pdf Vishay Siliconix Description: MOSFET P-CH 40V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
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SUD50N10-18P-E3 SUD50N10-18P-E3 sud50n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 8.2A/50A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7852DP-T1-GE3 SI7852DP-T1-GE3 si7852dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P06-15L-T4-E3 SUD50P06-15L-T4-E3 sud50p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM23N15-73-E3 SUM23N15-73-E3 sum23n15.pdf Vishay Siliconix Description: MOSFET N-CH 150V 23A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 73mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM23
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44STRLPBF IRFZ44STRLPBF sihfz44s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP60N10-18P-E3 SUP60N10-18P-E3 sup60n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 60A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SUP60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP53P06-20-GE3 SUP53P06-20-GE3 sup53p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 9.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLD014 IRLD014 sihld014.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 60V 1.7A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
IRF820 IRF820 91059.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 500V 2.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4505 Stücke - Preis und Lieferfrist anzeigen
SI7483ADP-T1-GE3 SI7483ADP-T1-GE3 73025.pdf Vishay Siliconix Description: MOSFET P-CH 30V 14A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4840EY-T1-GE3 SQ4840EY-T1-GE3 sq4840ey.pdf Vishay Siliconix Description: MOSFET N-CH 40V 20.7A 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 7.1W
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SQD50N02-04-GE3 SQD50N02-04-GE3 sqd50n02.pdf Vishay Siliconix Description: MOSFET N-CH D-S 20V 50A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Power - Max: 136W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9610PBF IRF9610PBF 91080.pdf Vishay Siliconix Description: MOSFET P-CH 200V 1.8A TO220AB
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 672 Stücke - Preis und Lieferfrist anzeigen
IRFZ48RPBF IRFZ48RPBF irfz48r.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A TO220AB
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 814 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 68 Stücke - Preis und Lieferfrist anzeigen
4+ 7.85 EUR
10+ 7.06 EUR
100+ 5.68 EUR
500+ 4.66 EUR
SUP90N08-8M2P-E3 SUP90N08-8M2P-E3 sup90n08.pdf Vishay Siliconix Description: MOSFET N-CH D-S 75V TO220AB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBC20STRLPBF IRFBC20STRLPBF 91107.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 388 Stücke - Preis und Lieferfrist anzeigen
SQM110N04-03L-GE3 SQM110N04-03L-GE3 sqm110n0.pdf Vishay Siliconix Description: MOSFET N-CH D-S 40V TO263
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 230W
Input Capacitance (Ciss) (Max) @ Vds: 5315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFD9110 IRFD9110 sihfd911.pdf Vishay Siliconix Description: MOSFET P-CH 100V 700MA 4DIP
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16953 Stücke - Preis und Lieferfrist anzeigen
IRFD310 IRFD310 sihfd310.pdf Vishay Siliconix Description: MOSFET N-CH 400V 350MA 4-DIP
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 400V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4189 Stücke - Preis und Lieferfrist anzeigen
SI4838DY-T1-GE3 SI4838DY-T1-GE3 71359.pdf Vishay Siliconix Description: MOSFET N-CH 12V 17A 8-SOIC
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD40N10-25-T4-E3 SUD40N10-25-T4-E3 sud40n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM40N10-30_GE3 SQM40N10-30_GE3 sqm40n10-30.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 358 Stücke - Preis und Lieferfrist anzeigen
SUM70N04-07L-E3 SUM70N04-07L-E3 72345.pdf Vishay Siliconix Description: MOSFET N-CH 40V 70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520 IRL520 IRL520,SiHL520.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ14 IRFZ14 91289.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 60V 10A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Power Dissipation (Max): 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: IRFZ14
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
IRFZ10 IRFZ10 sihfz10.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 43W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120N04-1M9_GE3 SQM120N04-1M9_GE3 sqm120n04-1m9.pdf Vishay Siliconix Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM200N04-1M7L_GE3 sqm200n04-1m7l.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQM200N
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 382 Stücke - Preis und Lieferfrist anzeigen
IRLR120 IRLR120 IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLR120TR IRLR120TR IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR120TRL IRLR120TRL IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4442DY-T1-GE3 SI4442DY-T1-GE3 si4442dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 15A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z34STRRPBF IRF9Z34STRRPBF sihf9z34.pdf Vishay Siliconix Description: MOSFET P-CH 60V 18A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 764 Stücke - Preis und Lieferfrist anzeigen
SI7374DP-T1-E3 SI7374DP-T1-E3 73560.pdf Vishay Siliconix Description: MOSFET N-CH 30V 24A PPAK SO-8
Power Dissipation (Max): 5W (Ta), 56W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 23.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4448DY-T1-GE3 SI4448DY-T1-GE3 si4448dy.pdf Vishay Siliconix Description: MOSFET N-CH 12V 50A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 12350pF @ 6V
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7138DP-T1-GE3 SI7138DP-T1-GE3 si7138dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 19.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 96W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7374DP-T1-GE3 SI7374DP-T1-GE3 73560.pdf Vishay Siliconix Description: MOSFET N-CH 30V 24A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 23.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7738DP-T1-E3 SI7738DP-T1-E3 si7738dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 96W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SUD25N15-52-T4-E3 SUD25N15-52-T4-E3 sud25n15.pdf Vishay Siliconix Description: MOSFET N-CH 150V 25A TO252
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SUD25
Manufacturer: Vishay Siliconix
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF610 IRF610 91023.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 200V 3.3A TO220AB
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF614 IRF614 irf614.pdf Vishay Siliconix Description: MOSFET N-CH 250V 2.7A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5030 Stücke - Preis und Lieferfrist anzeigen
IRFBC30LPBF IRFBC30LPBF 91111.pdf Vishay Siliconix Description: MOSFET N-CH 600V 3.6A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7457DP-T1-GE3 si7457dp.pdf
SI7457DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7846DP-T1-GE3 71442.pdf
SI7846DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 4A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7860DP-T1-GE3 71854.pdf
SI7860DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD40N04-10A-GE3 sqd40n04.pdf
SQD40N04-10A-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V 42A TO252
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Power - Max: 71W
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
SQD50P04-09L-GE3 sqd50p04.pdf
SQD50P04-09L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 136W
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-13L-GE3 sqd50p04-13l.pdf
SQD50P04-13L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ461EP-T1-GE3 sqj461ep.pdf
SQJ461EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 30A 8-SO
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 4710pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ469EP-T1_GE3 sqj469ep.pdf
SQJ469EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ469
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10070 Stücke - Preis und Lieferfrist anzeigen
SUD50P10-43-E3 73445.pdf
SUD50P10-43-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 38A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Operating Temperature: -50°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR826DP-T1-GE3 sir826dp.pdf
SIR826DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR826
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3855 Stücke - Preis und Lieferfrist anzeigen
SIR826DP-T1-GE3 sir826dp.pdf
SIR826DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR826
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
auf Bestellung 3855 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
IRFD9123 HRISD017-5-100.pdf?t.download=true&u=5oefqw
IRFD9123
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1A 4-DIP
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube
Mounting Type: Through Hole
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ4401DY-T1-GE3 sq4401dy.pdf
SQ4401DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 15.8A 8SOIC
Supplier Device Package: 8-SOIC N
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 6W
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Tc)
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF12N60E-GE3 sihf12n6.pdf
SIHF12N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4888DY-T1-GE3 71336.pdf
SI4888DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7342DP-T1-GE3 si7342dp.pdf
SI7342DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD35N05-26L-GE3 sqd35n05.pdf
SQD35N05-26L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510
IRL510
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7370DP-T1-GE3 71874.pdf
SI7370DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2531 Stücke - Preis und Lieferfrist anzeigen
SQ4470EY-T1-GE3 sq4470ey.pdf
SQ4470EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 7.1W
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD19N20-90-T4-E3 71767.pdf
SUD19N20-90-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 19A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
SUD35N10-26P-E3 sud35n10-26p.pdf
SUD35N10-26P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 35A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9530STRRPBF sihf9530.pdf
IRF9530STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A D2PAK
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM100N04-3M5-GE3 sqm100n0.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 157W
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4472DY-T1-E3 si4472dy.pdf
SI4472DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
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SI4472DY-T1-E3 si4472dy.pdf
SI4472DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
auf Bestellung 4669 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40169 Stücke - Preis und Lieferfrist anzeigen
SI4472DY-T1-E3 si4472dy.pdf
SI4472DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 4669 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40169 Stücke - Preis und Lieferfrist anzeigen
IRLR014TR sihlr014.pdf
IRLR014TR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 188064 Stücke - Preis und Lieferfrist anzeigen
IRLR014TRL sihlr014.pdf
IRLR014TRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7491DP-T1-GE3 72276.pdf
SI7491DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 5V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9620STRLPBF sihf9620.pdf
IRF9620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 470 Stücke - Preis und Lieferfrist anzeigen
IRFD220 техническая информация sihfd220.pdf
IRFD220
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 800MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 913 Stücke - Preis und Lieferfrist anzeigen
IRLR110 техническая информация sihlr110.pdf
IRLR110
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLR110TR sihlr110.pdf
IRLR110TR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR110TRL sihlr110.pdf
IRLR110TRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11475 Stücke - Preis und Lieferfrist anzeigen
IRLU110 sihlr110.pdf
IRLU110
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A TO251AA
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBC20LPBF 91107.pdf
IRFBC20LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF734 IRF734,%20SiHF734.pdf
IRF734
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 450V 4.9A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: IRF734
Power Dissipation (Max): 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF710 техническая информация 91041.pdf
IRF710
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 2A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Mounting Type: Through Hole
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Power Dissipation (Max): 36W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28660 Stücke - Preis und Lieferfrist anzeigen
SIHP14N50D-GE3 sihp14n50d.pdf
SIHP14N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE876DF-T1-GE3 sie876df.pdf
SIE876DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIE876DF-T1-GE3 sie876df.pdf
SIE876DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
SI4876DY-T1-E3 71312.pdf
SI4876DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 146433 Stücke - Preis und Lieferfrist anzeigen
SI4876DY-T1-GE3 71312.pdf
SI4876DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7148DP-T1-GE3 73314.pdf
SI7148DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 96W
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7356ADP-T1-E3 si7356ad.pdf
SI7356ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7356ADP-T1-GE3 si7356ad.pdf
SI7356ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ463EP-T1-GE3 sqj463ep.pdf
SQJ463EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N10-18P-E3 sud50n10.pdf
SUD50N10-18P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 8.2A/50A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7852DP-T1-GE3 si7852dp.pdf
SI7852DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P06-15L-T4-E3 sud50p06.pdf
SUD50P06-15L-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM23N15-73-E3 sum23n15.pdf
SUM23N15-73-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 23A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 73mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM23
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44STRLPBF sihfz44s.pdf
IRFZ44STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP60N10-18P-E3 sup60n10.pdf
SUP60N10-18P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SUP60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP53P06-20-GE3 sup53p06.pdf
SUP53P06-20-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLD014 техническая информация sihld014.pdf
IRLD014
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 1.7A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
IRF820 техническая информация 91059.pdf
IRF820
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4505 Stücke - Preis und Lieferfrist anzeigen
SI7483ADP-T1-GE3 73025.pdf
SI7483ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4840EY-T1-GE3 sq4840ey.pdf
SQ4840EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 7.1W
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SQD50N02-04-GE3 sqd50n02.pdf
SQD50N02-04-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 20V 50A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Power - Max: 136W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9610PBF 91080.pdf
IRF9610PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 672 Stücke - Preis und Lieferfrist anzeigen
IRFZ48RPBF irfz48r.pdf
IRFZ48RPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 814 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 68 Stücke - Preis und Lieferfrist anzeigen
4+ 7.85 EUR
10+ 7.06 EUR
100+ 5.68 EUR
500+ 4.66 EUR
SUP90N08-8M2P-E3 sup90n08.pdf
SUP90N08-8M2P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO220AB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBC20STRLPBF 91107.pdf
IRFBC20STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 388 Stücke - Preis und Lieferfrist anzeigen
SQM110N04-03L-GE3 sqm110n0.pdf
SQM110N04-03L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 230W
Input Capacitance (Ciss) (Max) @ Vds: 5315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFD9110 sihfd911.pdf
IRFD9110
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 700MA 4DIP
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Package / Case: 4-DIP (0.300", 7.62mm)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16953 Stücke - Preis und Lieferfrist anzeigen
IRFD310 sihfd310.pdf
IRFD310
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 350MA 4-DIP
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 400V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4189 Stücke - Preis und Lieferfrist anzeigen
SI4838DY-T1-GE3 71359.pdf
SI4838DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8-SOIC
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD40N10-25-T4-E3 sud40n10.pdf
SUD40N10-25-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM40N10-30_GE3 sqm40n10-30.pdf
SQM40N10-30_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 358 Stücke - Preis und Lieferfrist anzeigen
SUM70N04-07L-E3 72345.pdf
SUM70N04-07L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520 IRL520,SiHL520.pdf
IRL520
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ14 техническая информация 91289.pdf
IRFZ14
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Power Dissipation (Max): 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: IRFZ14
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
IRFZ10 sihfz10.pdf
IRFZ10
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 43W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120N04-1M9_GE3 sqm120n04-1m9.pdf
SQM120N04-1M9_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM200N04-1M7L_GE3 sqm200n04-1m7l.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQM200N
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 382 Stücke - Preis und Lieferfrist anzeigen
IRLR120 IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLR120TR IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120TR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR120TRL IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120TRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4442DY-T1-GE3 si4442dy.pdf
SI4442DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9Z34STRRPBF sihf9z34.pdf
IRF9Z34STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 764 Stücke - Preis und Lieferfrist anzeigen
SI7374DP-T1-E3 73560.pdf
SI7374DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A PPAK SO-8
Power Dissipation (Max): 5W (Ta), 56W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 23.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4448DY-T1-GE3 si4448dy.pdf
SI4448DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 50A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 12350pF @ 6V
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7138DP-T1-GE3 si7138dp.pdf
SI7138DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 19.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 96W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7374DP-T1-GE3 73560.pdf
SI7374DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 23.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7738DP-T1-E3 si7738dp.pdf
SI7738DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 96W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SUD25N15-52-T4-E3 sud25n15.pdf
SUD25N15-52-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SUD25
Manufacturer: Vishay Siliconix
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF610 техническая информация 91023.pdf
IRF610
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A TO220AB
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
IRF614 irf614.pdf
IRF614
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.7A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5030 Stücke - Preis und Lieferfrist anzeigen
IRFBC30LPBF 91111.pdf
IRFBC30LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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