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SUD45P03-09-GE3 SUD45P03-09-GE3 Vishay Siliconix sud45p03.pdf Description: MOSFET P-CH 30V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Produkt ist nicht verfügbar
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SUD50N02-04P-E3 SUD50N02-04P-E3 Vishay Siliconix Description: MOSFET N-CH 20V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Produkt ist nicht verfügbar
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SUD50N02-09P-E3 SUD50N02-09P-E3 Vishay Siliconix 72034.pdf Description: MOSFET N-CH 20V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.5W (Ta), 39.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Produkt ist nicht verfügbar
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SUD50N06-07L-GE3 SUD50N06-07L-GE3 Vishay Siliconix Description: MOSFET N-CH 60V 96A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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SUD50N10-18P-GE3 SUD50N10-18P-GE3 Vishay Siliconix Description: MOSFET N-CH 100V 8.2A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
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SUD50P04-08-GE3 SUD50P04-08-GE3 Vishay Siliconix sud50p04-08.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 15100 Stücke:
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2000+0.96 EUR
4000+0.9 EUR
6000+0.88 EUR
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SUD50P04-13L-GE3 SUD50P04-13L-GE3 Vishay Siliconix sud50p04.pdf Description: MOSFET P-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Produkt ist nicht verfügbar
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SUD50P08-25L-E3 SUD50P08-25L-E3 Vishay Siliconix sud50p08.pdf Description: MOSFET P-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 2000 Stücke:
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2000+1.63 EUR
Mindestbestellmenge: 2000
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SUM110N08-07P-E3 SUM110N08-07P-E3 Vishay Siliconix Description: MOSFET N-CH 75V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V
Produkt ist nicht verfügbar
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SUM85N03-06P-E3 SUM85N03-06P-E3 Vishay Siliconix sum85n03.pdf Description: MOSFET N-CH 30V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
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SUM90N06-4M4P-E3 SUM90N06-4M4P-E3 Vishay Siliconix Description: MOSFET N-CH 60V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 30 V
Produkt ist nicht verfügbar
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SUM90N10-8M2P-E3 SUM90N10-8M2P-E3 Vishay Siliconix sum90n10-8m2p.pdf Description: MOSFET N-CH 100V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 50 V
auf Bestellung 3200 Stücke:
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800+3.83 EUR
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SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix si1012rx.pdf Description: MOSFET N-CH 20V 500MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 6469 Stücke:
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16+1.14 EUR
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100+0.45 EUR
500+0.34 EUR
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SI1021R-T1-GE3 SI1021R-T1-GE3 Vishay Siliconix Si1021R.PDF Description: MOSFET P-CH 60V 190MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
auf Bestellung 20539 Stücke:
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18+1 EUR
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500+0.36 EUR
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SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Siliconix si1025x.pdf Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 16543 Stücke:
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SI1031R-T1-GE3 SI1031R-T1-GE3 Vishay Siliconix si1031r.pdf Description: MOSFET P-CH 20V 140MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 20366 Stücke:
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SI1035X-T1-GE3 SI1035X-T1-GE3 Vishay Siliconix si1035x.pdf Description: MOSFET N/P-CH 20V SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
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SI1040X-T1-GE3 SI1040X-T1-GE3 Vishay Siliconix si1040x.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC89-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 430mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 6566 Stücke:
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250+0.57 EUR
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SI1050X-T1-GE3 SI1050X-T1-GE3 Vishay Siliconix si1050x.pdf Description: MOSFET N-CH 8V 1.34A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
auf Bestellung 34821 Stücke:
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500+0.38 EUR
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SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 Vishay Siliconix si1300bd.pdf Description: MOSFET N-CH 20V 400MA SC-70-3
Produkt ist nicht verfügbar
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SI1302DL-T1-GE3 SI1302DL-T1-GE3 Vishay Siliconix 71249.pdf Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 29771 Stücke:
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SI1304BDL-T1-GE3 SI1304BDL-T1-GE3 Vishay Siliconix si1304bd.pdf Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
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SI1305DL-T1-GE3 SI1305DL-T1-GE3 Vishay Siliconix 71076.pdf Description: MOSFET P-CH 8V 0.86A SC-70-3
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SI1307EDL-T1-GE3 SI1307EDL-T1-GE3 Vishay Siliconix si1307ed.pdf Description: MOSFET P-CH 12V 0.85A SC-70-3
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SI1400DL-T1-GE3 SI1400DL-T1-GE3 Vishay Siliconix si1400dl.pdf Description: MOSFET N-CH 20V 1.6A SC-70-6
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SI1401EDH-T1-GE3 SI1401EDH-T1-GE3 Vishay Siliconix si1401edh.pdf Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
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SI1403CDL-T1-GE3 SI1403CDL-T1-GE3 Vishay Siliconix si1403cd.pdf Description: MOSFET P-CH 20V 2.1A SC-70-6
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SI1405BDH-T1-GE3 SI1405BDH-T1-GE3 Vishay Siliconix si1405bdh.pdf Description: MOSFET P-CH 8V 1.6A SC70-6
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SI1406DH-T1-GE3 SI1406DH-T1-GE3 Vishay Siliconix si1406dh.pdf Description: MOSFET N-CH 20V 3.1A SC-70-6
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SI1413EDH-T1-GE3 SI1413EDH-T1-GE3 Vishay Siliconix si1413ed.pdf Description: MOSFET P-CH 20V 2.3A SC-70-6
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SI1417EDH-T1-GE3 SI1417EDH-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
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SI1422DH-T1-GE3 SI1422DH-T1-GE3 Vishay Siliconix si1422dh.pdf Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 6 V
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SI1426DH-T1-GE3 SI1426DH-T1-GE3 Vishay Siliconix si1426dh.pdf Description: MOSFET N-CH 30V 2.8A SC-70-6
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SI1467DH-T1-GE3 SI1467DH-T1-GE3 Vishay Siliconix si1467dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
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SI1469DH-T1-GE3 SI1469DH-T1-GE3 Vishay Siliconix si1469dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
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SI1470DH-T1-GE3 SI1470DH-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
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SI1473DH-T1-GE3 SI1473DH-T1-GE3 Vishay Siliconix si1473dh.pdf Description: MOSFET P-CH 30V 2.7A SC-70-6
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SI1499DH-T1-GE3 SI1499DH-T1-GE3 Vishay Siliconix si1499dh.pdf Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
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SI1539DL-T1-GE3 SI1539DL-T1-GE3 Vishay Siliconix si1539dl.pdf Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
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SI1551DL-T1-GE3 SI1551DL-T1-GE3 Vishay Siliconix si1551dl.pdf Description: MOSFET N/P-CH 20V SC70-6
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SI1553DL-T1-GE3 SI1553DL-T1-GE3 Vishay Siliconix SI1553DL.pdf Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
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SI1563DH-T1-GE3 SI1563DH-T1-GE3 Vishay Siliconix 71963.pdf Description: MOSFET N/P-CH 20V 1.13A SC70-6
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SI1869DH-T1-GE3 SI1869DH-T1-GE3 Vishay Siliconix SI1869DH.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
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SI1902DL-T1-GE3 SI1902DL-T1-GE3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
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SI1903DL-T1-GE3 SI1903DL-T1-GE3 Vishay Siliconix si1903dl.pdf Description: MOSFET 2P-CH 20V 0.41A SC70-6
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SI1926DL-T1-E3 SI1926DL-T1-E3 Vishay Siliconix si1926dl.pdf Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
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SI1965DH-T1-GE3 SI1965DH-T1-GE3 Vishay Siliconix si1965dh.pdf Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
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SI1972DH-T1-GE3 SI1972DH-T1-GE3 Vishay Siliconix si1972dh.pdf Description: MOSFET 2N-CH 30V 1.3A SC-70-6
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SI1988DH-T1-GE3 SI1988DH-T1-GE3 Vishay Siliconix SI1988DH.pdf Description: MOSFET 2N-CH 20V 1.3A SC-70-6
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Si2300DS-T1-GE3 Si2300DS-T1-GE3 Vishay Siliconix si2300ds.pdf Description: MOSFET N-CH 30V 3.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
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SI2312CDS-T1-GE3 SI2312CDS-T1-GE3 Vishay Siliconix si2312cd.pdf Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
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SI2318DS-T1-GE3 SI2318DS-T1-GE3 Vishay Siliconix si2318ds.pdf Description: MOSFET N-CH 40V 3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
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SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
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SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 Vishay Siliconix si2323cds.pdf Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V
auf Bestellung 3650 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
24+0.76 EUR
100+0.62 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 18
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SI2325DS-T1-GE3 SI2325DS-T1-GE3 Vishay Siliconix 73238.pdf Description: MOSFET P-CH 150V 530MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 16870 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
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SI2327DS-T1-GE3 SI2327DS-T1-GE3 Vishay Siliconix 73240.pdf Description: MOSFET P-CH 200V 0.38A SOT-23
Produkt ist nicht verfügbar
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SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 Vishay Siliconix si2333cd.pdf Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 16230 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.49 EUR
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SI2334DS-T1-GE3 SI2334DS-T1-GE3 Vishay Siliconix si2334ds.pdf Description: MOSFET N-CH 30V 4.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 15 V
Produkt ist nicht verfügbar
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SI2343CDS-T1-GE3 SI2343CDS-T1-GE3 Vishay Siliconix si2343cd.pdf Description: MOSFET P-CH 30V 5.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 46165 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
22+0.84 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.38 EUR
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SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 Vishay Siliconix si2377eds.pdf Description: MOSFET P-CH 20V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 5095 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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SUD45P03-09-GE3 sud45p03.pdf
SUD45P03-09-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Produkt ist nicht verfügbar
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SUD50N02-04P-E3
SUD50N02-04P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Produkt ist nicht verfügbar
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SUD50N02-09P-E3 72034.pdf
SUD50N02-09P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.5W (Ta), 39.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Produkt ist nicht verfügbar
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SUD50N06-07L-GE3
SUD50N06-07L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 96A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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SUD50N10-18P-GE3
SUD50N10-18P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 8.2A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
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SUD50P04-08-GE3 sud50p04-08.pdf
SUD50P04-08-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 15100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.96 EUR
4000+0.9 EUR
6000+0.88 EUR
Mindestbestellmenge: 2000
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SUD50P04-13L-GE3 sud50p04.pdf
SUD50P04-13L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Produkt ist nicht verfügbar
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SUD50P08-25L-E3 sud50p08.pdf
SUD50P08-25L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.63 EUR
Mindestbestellmenge: 2000
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SUM110N08-07P-E3
SUM110N08-07P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V
Produkt ist nicht verfügbar
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SUM85N03-06P-E3 sum85n03.pdf
SUM85N03-06P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
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SUM90N06-4M4P-E3
SUM90N06-4M4P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 30 V
Produkt ist nicht verfügbar
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SUM90N10-8M2P-E3 sum90n10-8m2p.pdf
SUM90N10-8M2P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 50 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.83 EUR
Mindestbestellmenge: 800
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SI1012X-T1-GE3 si1012rx.pdf
SI1012X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 6469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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SI1021R-T1-GE3 Si1021R.PDF
SI1021R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
auf Bestellung 20539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
27+0.67 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 18
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SI1025X-T1-GE3 si1025x.pdf
SI1025X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 16543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.8 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.34 EUR
Mindestbestellmenge: 14
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SI1031R-T1-GE3 si1031r.pdf
SI1031R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 140MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 20366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
26+0.69 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.26 EUR
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SI1035X-T1-GE3 si1035x.pdf
SI1035X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 5365 Stücke:
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Anzahl Preis
25+0.72 EUR
29+0.61 EUR
100+0.43 EUR
500+0.33 EUR
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SI1040X-T1-GE3 si1040x.pdf
SI1040X-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC89-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 430mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 6566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
23+0.79 EUR
25+0.71 EUR
100+0.62 EUR
250+0.57 EUR
500+0.55 EUR
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SI1050X-T1-GE3 si1050x.pdf
SI1050X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
auf Bestellung 34821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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SI1300BDL-T1-GE3 si1300bd.pdf
SI1300BDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 400MA SC-70-3
Produkt ist nicht verfügbar
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SI1302DL-T1-GE3 71249.pdf
SI1302DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 29771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
31+0.58 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.26 EUR
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SI1304BDL-T1-GE3 si1304bd.pdf
SI1304BDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Produkt ist nicht verfügbar
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SI1305DL-T1-GE3 71076.pdf
SI1305DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SC-70-3
Produkt ist nicht verfügbar
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SI1307EDL-T1-GE3 si1307ed.pdf
SI1307EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SC-70-3
Produkt ist nicht verfügbar
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SI1400DL-T1-GE3 si1400dl.pdf
SI1400DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC-70-6
auf Bestellung 383 Stücke:
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SI1401EDH-T1-GE3 si1401edh.pdf
SI1401EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
auf Bestellung 16681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
30+0.6 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
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SI1403CDL-T1-GE3 si1403cd.pdf
SI1403CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.1A SC-70-6
Produkt ist nicht verfügbar
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SI1405BDH-T1-GE3 si1405bdh.pdf
SI1405BDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Produkt ist nicht verfügbar
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SI1406DH-T1-GE3 si1406dh.pdf
SI1406DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.1A SC-70-6
Produkt ist nicht verfügbar
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SI1413EDH-T1-GE3 si1413ed.pdf
SI1413EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC-70-6
Produkt ist nicht verfügbar
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SI1417EDH-T1-GE3
SI1417EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1422DH-T1-GE3 si1422dh.pdf
SI1422DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 6 V
Produkt ist nicht verfügbar
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SI1426DH-T1-GE3 si1426dh.pdf
SI1426DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC-70-6
Produkt ist nicht verfügbar
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SI1467DH-T1-GE3 si1467dh.pdf
SI1467DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 11
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SI1469DH-T1-GE3 si1469dh.pdf
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 14210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
20+0.89 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.45 EUR
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SI1470DH-T1-GE3
SI1470DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Produkt ist nicht verfügbar
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SI1473DH-T1-GE3 si1473dh.pdf
SI1473DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
auf Bestellung 1081 Stücke:
Lieferzeit 10-14 Tag (e)
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SI1499DH-T1-GE3 si1499dh.pdf
SI1499DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 11
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SI1539DL-T1-GE3 si1539dl.pdf
SI1539DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1551DL-T1-GE3 si1551dl.pdf
SI1551DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
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SI1553DL-T1-GE3 SI1553DL.pdf
SI1553DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1563DH-T1-GE3 71963.pdf
SI1563DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
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SI1869DH-T1-GE3 SI1869DH.pdf
SI1869DH-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
auf Bestellung 3380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.58 EUR
35+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.38 EUR
Mindestbestellmenge: 22
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SI1902DL-T1-GE3 si1902dl.pdf
SI1902DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 13403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
22+0.81 EUR
100+0.53 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14
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SI1903DL-T1-GE3 si1903dl.pdf
SI1903DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.41A SC70-6
Produkt ist nicht verfügbar
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SI1926DL-T1-E3 si1926dl.pdf
SI1926DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 7441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
34+0.53 EUR
100+0.37 EUR
500+0.3 EUR
1000+0.27 EUR
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SI1965DH-T1-GE3 si1965dh.pdf
SI1965DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3805 Stücke:
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Anzahl Preis
19+0.97 EUR
25+0.72 EUR
100+0.51 EUR
500+0.39 EUR
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SI1972DH-T1-GE3 si1972dh.pdf
SI1972DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC-70-6
Produkt ist nicht verfügbar
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SI1988DH-T1-GE3 SI1988DH.pdf
SI1988DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC-70-6
Produkt ist nicht verfügbar
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Si2300DS-T1-GE3 si2300ds.pdf
Si2300DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 36432 Stücke:
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Anzahl Preis
18+1 EUR
29+0.62 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
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SI2312CDS-T1-GE3 si2312cd.pdf
SI2312CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 32928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
28+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
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SI2318DS-T1-GE3 si2318ds.pdf
SI2318DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Produkt ist nicht verfügbar
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SI2319CDS-T1-GE3 si2319cd.pdf
SI2319CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 26418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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SI2323CDS-T1-GE3 si2323cds.pdf
SI2323CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V
auf Bestellung 3650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
24+0.76 EUR
100+0.62 EUR
500+0.54 EUR
1000+0.49 EUR
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SI2325DS-T1-GE3 73238.pdf
SI2325DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 530MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 16870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
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SI2327DS-T1-GE3 73240.pdf
SI2327DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 0.38A SOT-23
Produkt ist nicht verfügbar
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SI2333CDS-T1-GE3 si2333cd.pdf
SI2333CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 16230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.49 EUR
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SI2334DS-T1-GE3 si2334ds.pdf
SI2334DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 15 V
Produkt ist nicht verfügbar
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SI2343CDS-T1-GE3 si2343cd.pdf
SI2343CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 46165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.84 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.38 EUR
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SI2377EDS-T1-GE3 si2377eds.pdf
SI2377EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 5095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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