Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10981) > Seite 51 nach 184
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SI1302DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 600MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1304BDL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 900MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V Power Dissipation (Max): 340mW (Ta), 370mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI1307EDL-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 0.85A SC-70-3 |
Produkt ist nicht verfügbar |
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SI1400DL-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 1.6A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1401EDH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 4A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1403CDL-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 2.1A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1405BDH-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 1.6A SC70-6 |
Produkt ist nicht verfügbar |
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SI1406DH-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 3.1A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1413EDH-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 2.3A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1417EDH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 2.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI1422DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 4A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI1426DH-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 2.8A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1467DH-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 2.7A SC-70-6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1469DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1470DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 5.1A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI1471DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 2.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI1473DH-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 2.7A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1499DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 1.6A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V |
Produkt ist nicht verfügbar |
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SI1539DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 0.54A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
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SI1551DL-T1-GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V SC70-6 |
Produkt ist nicht verfügbar |
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SI1553DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 0.66A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
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SI1563DH-T1-GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 1.13A SC70-6 |
Produkt ist nicht verfügbar |
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SI1869DH-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 132mOhm Voltage - Load: 1.8V ~ 20V Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1902DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.66A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1903DL-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 0.41A SC70-6 |
Produkt ist nicht verfügbar |
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SI1926DL-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.37A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1965DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1967DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1.3A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
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SI1972DH-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 1.3A SC-70-6 |
Produkt ist nicht verfügbar |
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SI1988DH-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 1.3A SC-70-6 |
Produkt ist nicht verfügbar |
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Si2300DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 3.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2312CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2318DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2319CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 4.4A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V |
auf Bestellung 26115 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2323CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2325DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 530MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2327DS-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 200V 0.38A SOT-23 |
Produkt ist nicht verfügbar |
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SI2333CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2334DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2343CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 5.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2377EDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4.4A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si3410DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 4.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si3430DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V |
Produkt ist nicht verfügbar |
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SI3437DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 1.4A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3438DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 7.4A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3440DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3447CDV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 7.8A 6-TSOP |
Produkt ist nicht verfügbar |
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SI3456DDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 6.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3459BDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 7.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3464DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI3469DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
Produkt ist nicht verfügbar |
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SI3473CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3477DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 6 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3483CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
auf Bestellung 77716 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3493BDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si3552DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 6-TSOP Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si3585DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 6-TSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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Si3586DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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Si3588DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.5A 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW, 83mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
SI1302DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
15000+ | 0.21 EUR |
SI1304BDL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Produkt ist nicht verfügbar
SI1307EDL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SC-70-3
Description: MOSFET P-CH 12V 0.85A SC-70-3
Produkt ist nicht verfügbar
SI1400DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC-70-6
Description: MOSFET N-CH 20V 1.6A SC-70-6
Produkt ist nicht verfügbar
SI1401EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.19 EUR |
SI1403CDL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.1A SC-70-6
Description: MOSFET P-CH 20V 2.1A SC-70-6
Produkt ist nicht verfügbar
SI1405BDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Description: MOSFET P-CH 8V 1.6A SC70-6
Produkt ist nicht verfügbar
SI1406DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.1A SC-70-6
Description: MOSFET N-CH 20V 3.1A SC-70-6
Produkt ist nicht verfügbar
SI1413EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC-70-6
Description: MOSFET P-CH 20V 2.3A SC-70-6
Produkt ist nicht verfügbar
SI1417EDH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1422DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 6 V
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 6 V
Produkt ist nicht verfügbar
SI1426DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC-70-6
Description: MOSFET N-CH 30V 2.8A SC-70-6
Produkt ist nicht verfügbar
SI1467DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Description: MOSFET P-CH 20V 2.7A SC-70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)SI1469DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.37 EUR |
6000+ | 0.35 EUR |
9000+ | 0.33 EUR |
SI1470DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Produkt ist nicht verfügbar
SI1471DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V
Description: MOSFET P-CH 30V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V
Produkt ist nicht verfügbar
SI1473DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Description: MOSFET P-CH 30V 2.7A SC-70-6
Produkt ist nicht verfügbar
SI1499DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Produkt ist nicht verfügbar
SI1539DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1551DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
SI1553DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1563DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1869DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.32 EUR |
15000+ | 0.31 EUR |
SI1902DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.25 EUR |
9000+ | 0.24 EUR |
SI1903DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.41A SC70-6
Description: MOSFET 2P-CH 20V 0.41A SC70-6
Produkt ist nicht verfügbar
SI1926DL-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
SI1965DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.26 EUR |
SI1967DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1972DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC-70-6
Description: MOSFET 2N-CH 30V 1.3A SC-70-6
Produkt ist nicht verfügbar
SI1988DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC-70-6
Description: MOSFET 2N-CH 20V 1.3A SC-70-6
Produkt ist nicht verfügbar
Si2300DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.19 EUR |
SI2312CDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.2 EUR |
30000+ | 0.19 EUR |
SI2318DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Description: MOSFET N-CH 40V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.28 EUR |
6000+ | 0.26 EUR |
SI2319CDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 26115 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.28 EUR |
9000+ | 0.26 EUR |
SI2323CDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.45 EUR |
SI2325DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 530MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET P-CH 150V 530MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.63 EUR |
6000+ | 0.6 EUR |
9000+ | 0.57 EUR |
SI2327DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 0.38A SOT-23
Description: MOSFET P-CH 200V 0.38A SOT-23
Produkt ist nicht verfügbar
SI2333CDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.32 EUR |
6000+ | 0.3 EUR |
9000+ | 0.28 EUR |
SI2334DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 15 V
Description: MOSFET N-CH 30V 4.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 15 V
Produkt ist nicht verfügbar
SI2343CDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: MOSFET P-CH 30V 5.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.32 EUR |
6000+ | 0.3 EUR |
9000+ | 0.28 EUR |
SI2377EDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
Description: MOSFET P-CH 20V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.2 EUR |
Si3410DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.49 EUR |
Si3430DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Produkt ist nicht verfügbar
SI3437DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V
Description: MOSFET P-CH 150V 1.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
6000+ | 0.52 EUR |
9000+ | 0.48 EUR |
SI3438DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
Description: MOSFET N-CH 40V 7.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.7 EUR |
6000+ | 0.66 EUR |
9000+ | 0.63 EUR |
SI3440DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET N-CH 150V 1.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.96 EUR |
6000+ | 0.91 EUR |
9000+ | 0.87 EUR |
SI3447CDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.8A 6-TSOP
Description: MOSFET P-CH 12V 7.8A 6-TSOP
Produkt ist nicht verfügbar
SI3456DDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
SI3459BDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.48 EUR |
6000+ | 0.45 EUR |
9000+ | 0.42 EUR |
SI3460DDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Description: MOSFET N-CH 20V 7.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
SI3464DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Produkt ist nicht verfügbar
SI3469DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Description: MOSFET P-CH 20V 5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Produkt ist nicht verfügbar
SI3473CDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.42 EUR |
SI3477DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 6 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.43 EUR |
6000+ | 0.41 EUR |
9000+ | 0.38 EUR |
SI3483CDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 77716 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.59 EUR |
SI3493BDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.56 EUR |
6000+ | 0.53 EUR |
9000+ | 0.49 EUR |
Si3552DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.49 EUR |
Si3585DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Si3586DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
Si3588DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 20V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar