Die Produkte vishay siliconix

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SI7115DN-T1-GE3 SI7115DN-T1-GE3 si7115dn.pdf Vishay Siliconix Description: MOSFET P-CH 150V 8.9A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7115
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10156 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 150V 8.9A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7115
auf Bestellung 13083 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10156 Stücke - Preis und Lieferfrist anzeigen
SIJ420DP-T1-GE3 SIJ420DP-T1-GE3 sij420dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 50A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 62.5W
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 62.5W
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 50A PPAK SO-8
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 62.5W
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
SIJ458DP-T1-GE3 SIJ458DP-T1-GE3 sij458dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4124DY-T1-GE3 SI4124DY-T1-GE3 si4124dy.pdf Vishay Siliconix Description: MOSFET N-CH 40V 20.5A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4124
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 20.5A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4124
auf Bestellung 2878 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 20.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6107 Stücke
Lieferzeit 21-28 Tag (e)
SIE836DF-T1-GE3 SIE836DF-T1-GE3 sie836df.pdf Vishay Siliconix Description: MOSFET N-CH 200V 18.3A POLARPAK
Supplier Device Package: 10-PolarPAK® (SH)
Package / Case: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7463DP-T1-E3 SI7463DP-T1-E3 si7463dp.pdf Vishay Siliconix Description: MOSFET P-CH 40V 11A PPAK SO-8
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9294 Stücke - Preis und Lieferfrist anzeigen
IRFBF20STRLPBF IRFBF20STRLPBF sihfb20s.pdf Vishay Siliconix Description: MOSFET N-CH 900V 1.7A D2PAK
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE874DF-T1-GE3 SIE874DF-T1-GE3 SIE874DF.pdf Vishay Siliconix Description: MOSFET N-CH 20V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.17 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 60A 10POLARPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE874
auf Bestellung 413 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.17 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 423 Stücke
Lieferzeit 21-28 Tag (e)
SUD40N08-16-E3 SUD40N08-16-E3 71323.pdf Vishay Siliconix Description: MOSFET N-CH 80V 40A TO252
Base Part Number: SUD40
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 80V 40A TO252
Base Part Number: SUD40
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2799 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38000 Stücke - Preis und Lieferfrist anzeigen
SIP12503DMP-T1-E3 73579.pdf Vishay Siliconix Description: IC REG BOOST ADJ 0.5A MLP33-6
Supplier Device Package: PowerPAK® MLP33-6
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Current - Output: 500mA
Frequency - Switching: 300kHz
PWM Type: Voltage Mode
Voltage - Input: 0.85V ~ 5V
Voltage - Output: 2V ~ 5V
Number of Outputs: 1
Output Type: Adjustable
Type: Step-Up (Boost)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP1759DH-T1-E3 SIP1759DH-T1-E3 SIP1759.pdf Vishay Siliconix Description: IC REG CHARG PUMP AD/3.3V 10MSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Function: Step-Up/Step-Down
Output Configuration: Positive
Topology: Charge Pump
Output Type: Adjustable (Fixed)
Number of Outputs: 1
Voltage - Input (Min): 1.6V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.5V (3.3V)
Voltage - Output (Max): 5.5V
Current - Output: 100mA
Frequency - Switching: 1.5MHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP
Base Part Number: SIP175
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP12504DMP-T1-E3 Vishay Siliconix Description: IC REG BOOST ADJ 1.6A MLP33-6
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP33-6
Supplier Device Package: PowerPAK® MLP33-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP12506DMP-T1-E3 sip12506.pdf Vishay Siliconix Description: IC REG BOOST ADJ 1.6A MLP33-6
Current - Output: 1.6A
Frequency - Switching: 1MHz
PWM Type: Current Mode
Voltage - Input: 2.6 V ~ 9 V
Voltage - Output: Adj to 20V
Number of Outputs: 1
Output Type: Adjustable
Type: Step-Up (Boost)
Supplier Device Package: PowerPAK® MLP33-6
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9166BQ-T1-E3 SI9166BQ-T1-E3 si9166.pdf Vishay Siliconix Description: IC REG BCK BST 1.5A SYNC 16TSSOP
Frequency - Switching: 200kHz ~ 2MHz
Current - Output: 1.5A (Switch)
Voltage - Input (Max): 6V
Voltage - Input (Min): 2.7V
Number of Outputs: 1
Topology: Buck, Boost
Output Configuration: Positive
Function: Step-Up, Step-Down
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9102DN02-T1-E3 si9102.pdf Vishay Siliconix Description: IC REG FLYBCK FWRD 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback, Forward Converter
Output Configuration: Positive, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9108DN02-T1-E3 si9108.pdf Vishay Siliconix Description: IC REG FLYBK ISOLATED 4V 20PLCC
Type: Flyback, Isolated
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
PWM Type: Current Mode
Voltage - Input: 10 V ~ 120 V
Voltage - Output: 4V
Number of Outputs: 1
Output Type: Fixed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9104DW-T1-E3 SI9104DW-T1-E3 Si9104.pdf Vishay Siliconix Description: IC REG FLYBCK FWRD 16SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback, Forward Converter
Output Configuration: Positive, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 358 Stücke - Preis und Lieferfrist anzeigen
SI9100DJ02-E3 SI9100DJ02-E3 si9100.pdf Vishay Siliconix Description: IC REG MULTI CONFG 14DIP
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 70V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Buck, Buck-Boost, Flyback, Forward Converter
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Down, Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9100DN02-E3 si9100.pdf Vishay Siliconix Description: IC REG MULTI CONFG 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 70V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Buck, Buck-Boost, Flyback, Forward Converter
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Down, Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9102DN02-E3 si9102.pdf Vishay Siliconix Description: IC REG FLYBCK FWRD 20PLCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback, Forward Converter
Output Configuration: Positive, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9108DN02-E3 si9108.pdf Vishay Siliconix Description: IC REG FLYBK ISOLATED 4V 20PLCC
Type: Flyback, Isolated
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
PWM Type: Current Mode
Voltage - Input: 10 V ~ 120 V
Voltage - Output: 4V
Number of Outputs: 1
Output Type: Fixed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9105DN02-T1-E3 si9105.pdf Vishay Siliconix Description: IC REG FLYBACK INV 20PLCC
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LCC (J-Lead)
Supplier Device Package: 20-PLCC (9x9)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9104DW-E3 SI9104DW-E3 si9104.pdf Vishay Siliconix Description: IC REG MULTI CONFIG 4V 16SOIC
Type: Flyback, Forward Converter, Isolated
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
PWM Type: Current Mode
Voltage - Input: 10 V ~ 120 V
Voltage - Output: 4V
Number of Outputs: 1
Output Type: Fixed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9105DN02-E3 si9105.pdf Vishay Siliconix Description: IC REG FLYBACK INV 20PLCC
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4166DY-T1-GE3 SI4166DY-T1-GE3 si4166dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30.5A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4166
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Part Status: Active
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2263 Stücke - Preis und Lieferfrist anzeigen
SI4204DY-T1-GE3 SI4204DY-T1-GE3 si4204dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 19.8A 8-SOIC
FET Type: 2 N-Channel (Dual)
Part Status: Active
Base Part Number: SI4204
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5686 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 413 Stücke - Preis und Lieferfrist anzeigen
SI4472DY-T1-GE3 SI4472DY-T1-GE3 si4472dy.pdf Vishay Siliconix Description: MOSFET N-CH 150V 7.7A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Power - Max: 5.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 150V 7.7A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Power - Max: 5.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 1692 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 150V 7.7A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Power - Max: 5.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 1692 Stücke
Lieferzeit 21-28 Tag (e)
SI7852ADP-T1-E3 SI7852ADP-T1-E3 si7852ad.pdf Vishay Siliconix Description: MOSFET N-CH 80V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3140 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 80V 30A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3140 Stücke - Preis und Lieferfrist anzeigen
SUD50P06-15L-E3 SUD50P06-15L-E3 sud50p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6380 Stücke - Preis und Lieferfrist anzeigen
SUM40N10-30-E3 SUM40N10-30-E3 72134.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF9630STRLPBF IRF9630STRLPBF IRF9630S_SiHF9630S.pdf Vishay Siliconix Description: MOSFET P-CH 200V 6.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR880DP-T1-GE3 SIR880DP-T1-GE3 sir880dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2343 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
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Lieferzeit 21-28 Tag (e)
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IRFZ44STRRPBF IRFZ44STRRPBF 91293.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE820DF-T1-GE3 SIE820DF-T1-GE3 sie820df.pdf Vishay Siliconix Description: MOSFET N-CH 20V 50A POLARPAK
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
SIE726DF-T1-GE3 SIE726DF-T1-GE3 sie726df.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
SI7431DP-T1-E3 SI7431DP-T1-E3 si7431dp.pdf Vishay Siliconix Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFBC40STRLPBF IRFBC40STRLPBF 91116.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFL9110TRPBF IRFL9110TRPBF sihfl911.pdf техническая информация Vishay Siliconix Description: MOSFET P-CH 100V 1.1A SOT223
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Base Part Number: IRFL9110
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15278 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 862 Stücke - Preis und Lieferfrist anzeigen
DG303BDY-E3 DG303BDY-E3 71402.pdf Vishay Siliconix Description: IC SWITCH CMOS 14SOIC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-SOIC
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 300 Stücke
Lieferzeit 21-28 Tag (e)
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2+ 15.03 EUR
10+ 13.51 EUR
25+ 12.77 EUR
100+ 11.07 EUR
250+ 10.5 EUR
DG303BDJ-E3 DG303BDJ-E3 71402.pdf Vishay Siliconix Description: IC SWITCH CMOS 14DIP
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: DG303
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -74dB @ 500kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Charge Injection: 8pC
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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SI6913DQ-T1-GE3 SI6913DQ-T1-GE3 si6913dq.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1524 Stücke - Preis und Lieferfrist anzeigen
DG419BDY-T1-E3 DG419BDY-T1-E3 dg417b.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -88dB @ 1MHz
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 38pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQR40N10-25_GE3 SQR40N10-25_GE3 sqr40n10-25.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO252 REV
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Packaging: Cut Tape (CT)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ3426EV-T1_GE3 SQ3426EV-T1_GE3 sq3426ev.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ3426
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Base Part Number: SQ3426
Package / Case: SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
IRF9Z34STRRPBF IRF9Z34STRRPBF sihf9z34.pdf Vishay Siliconix Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lieferzeit 21-28 Tag (e)
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4+ 7.12 EUR
10+ 6.41 EUR
100+ 5.25 EUR
SI1013CX-T1-GE3 SI1013CX-T1-GE3 si1013cx.pdf Vishay Siliconix Description: MOSFET P-CH 20V 450MA SC89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Base Part Number: SI1013
Manufacturer: Vishay Siliconix
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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DG1411EEN-T1-GE4 DG1411EEN-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC ANLG SWITCH QUAD SPST 16QFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH101DN-T1-GE3 SISH101DN-T1-GE3 sish101dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 16.9A/35A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Manufacturer: Vishay Siliconix
Base Part Number: SISH101
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SQP10250E_GE3 SQP10250E_GE3 sqp10250e.pdf Vishay Siliconix Description: MOSFET N-CH 250V 53A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
SQM60N06-15_GE3 SQM60N06-15_GE3 sqm60n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 56A TO263
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SQM60N
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
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Lieferzeit 21-28 Tag (e)
SQP100N04-3M6_GE3 SQP100N04-3M6_GE3 sqp100n04-3m6.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 252 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.59 EUR
10+ 5.02 EUR
100+ 4.04 EUR
SI1062X-T1-GE3 SI1062X-T1-GE3 si1062x.pdf Vishay Siliconix Description: MOSFET N-CH 20V SC89-3
Base Part Number: SI1062
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1062
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220mW (Ta)
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Lieferzeit 21-28 Tag (e)
SI1013CX-T1-GE3 SI1013CX-T1-GE3 si1013cx.pdf Vishay Siliconix Description: MOSFET P-CH 20V 450MA SC89-3
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1013
Manufacturer: Vishay Siliconix
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Vgs (Max): ±8V
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SI2302CDS-T1-E3 SI2302CDS-T1-E3 si2302cds.pdf Vishay Siliconix Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 si2371eds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.8A SOT-23
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2371
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2347DS-T1-GE3 SI2347DS-T1-GE3 si2347ds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2347
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1012CR-T1-GE3 SI1012CR-T1-GE3 si1012cr.pdf Vishay Siliconix Description: MOSFET N-CH 20V SC75A
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-75A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 240mW (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1315DL-T1-GE3 SI1315DL-T1-GE3 si1315dl.pdf Vishay Siliconix Description: MOSFET P-CH 8V 0.9A SC70-3
Base Part Number: SI1315
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 112pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2356DS-T1-GE3 SI2356DS-T1-GE3 si2356ds.pdf Vishay Siliconix Description: MOSFET N-CH 40V 4.3A TO236
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3456DDV-T1-E3 SI3456DDV-T1-E3 si3456ddv.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6.3A 6TSOP
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
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Lieferzeit 21-28 Tag (e)
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SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 si1424ed.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4A SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Vishay Siliconix
Base Part Number: SI1424
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7256 Stücke - Preis und Lieferfrist anzeigen
SI1489EDH-T1-GE3 SI1489EDH-T1-GE3 si1489ed.pdf Vishay Siliconix Description: MOSFET P-CH 8V 2A SOT-363
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5584 Stücke - Preis und Lieferfrist anzeigen
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 si2318cd.pdf Vishay Siliconix Description: MOSFET N-CH 40V 5.6A SOT23-3
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1317DL-T1-GE3 SI1317DL-T1-GE3 si1317dl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.4A SOT323
Base Part Number: SI1317
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9140 Stücke - Preis und Lieferfrist anzeigen
SI1077X-T1-GE3 SI1077X-T1-GE3 si1077x.pdf Vishay Siliconix Description: MOSFET P-CH 20V SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Lieferzeit 21-28 Tag (e)
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SI7115DN-T1-GE3 si7115dn.pdf
SI7115DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7115
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Lieferzeit 21-28 Tag (e)
auf Bestellung 23239 Stücke - Preis und Lieferfrist anzeigen
SI7115DN-T1-GE3 si7115dn.pdf
SI7115DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7115
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Lieferzeit 21-28 Tag (e)
auf Bestellung 22156 Stücke - Preis und Lieferfrist anzeigen
SIJ420DP-T1-GE3 sij420dp.pdf
SIJ420DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 62.5W
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
SIJ420DP-T1-GE3 sij420dp.pdf
SIJ420DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 62.5W
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
auf Bestellung 500 Stücke - Preis und Lieferfrist anzeigen
SIJ420DP-T1-GE3 sij420dp.pdf
SIJ420DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 62.5W
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
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Lieferzeit 21-28 Tag (e)
auf Bestellung 500 Stücke - Preis und Lieferfrist anzeigen
SIJ458DP-T1-GE3 sij458dp.pdf
SIJ458DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4124DY-T1-GE3 si4124dy.pdf
SI4124DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.5A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4124
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Lieferzeit 21-28 Tag (e)
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SI4124DY-T1-GE3 si4124dy.pdf
SI4124DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.5A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4124
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Lieferzeit 21-28 Tag (e)
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SI4124DY-T1-GE3 si4124dy.pdf
SI4124DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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SIE836DF-T1-GE3 sie836df.pdf
SIE836DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.3A POLARPAK
Supplier Device Package: 10-PolarPAK® (SH)
Package / Case: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7463DP-T1-E3 si7463dp.pdf
SI7463DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9294 Stücke - Preis und Lieferfrist anzeigen
IRFBF20STRLPBF sihfb20s.pdf
IRFBF20STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A D2PAK
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE874DF-T1-GE3 SIE874DF.pdf
SIE874DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.17 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 836 Stücke - Preis und Lieferfrist anzeigen
SIE874DF-T1-GE3 SIE874DF.pdf
SIE874DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE874
auf Bestellung 413 Stücke
Lieferzeit 21-28 Tag (e)
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SIE874DF-T1-GE3 SIE874DF.pdf
SIE874DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.17 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
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Lieferzeit 21-28 Tag (e)
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SUD40N08-16-E3 71323.pdf
SUD40N08-16-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 40A TO252
Base Part Number: SUD40
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40799 Stücke - Preis und Lieferfrist anzeigen
SUD40N08-16-E3 71323.pdf
SUD40N08-16-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 40A TO252
Base Part Number: SUD40
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2799 Stücke
Lieferzeit 21-28 Tag (e)
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SIP12503DMP-T1-E3 73579.pdf
Hersteller: Vishay Siliconix
Description: IC REG BOOST ADJ 0.5A MLP33-6
Supplier Device Package: PowerPAK® MLP33-6
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Current - Output: 500mA
Frequency - Switching: 300kHz
PWM Type: Voltage Mode
Voltage - Input: 0.85V ~ 5V
Voltage - Output: 2V ~ 5V
Number of Outputs: 1
Output Type: Adjustable
Type: Step-Up (Boost)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP1759DH-T1-E3 SIP1759.pdf
SIP1759DH-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG CHARG PUMP AD/3.3V 10MSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Function: Step-Up/Step-Down
Output Configuration: Positive
Topology: Charge Pump
Output Type: Adjustable (Fixed)
Number of Outputs: 1
Voltage - Input (Min): 1.6V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.5V (3.3V)
Voltage - Output (Max): 5.5V
Current - Output: 100mA
Frequency - Switching: 1.5MHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP
Base Part Number: SIP175
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP12504DMP-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG BOOST ADJ 1.6A MLP33-6
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP33-6
Supplier Device Package: PowerPAK® MLP33-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP12506DMP-T1-E3 sip12506.pdf
Hersteller: Vishay Siliconix
Description: IC REG BOOST ADJ 1.6A MLP33-6
Current - Output: 1.6A
Frequency - Switching: 1MHz
PWM Type: Current Mode
Voltage - Input: 2.6 V ~ 9 V
Voltage - Output: Adj to 20V
Number of Outputs: 1
Output Type: Adjustable
Type: Step-Up (Boost)
Supplier Device Package: PowerPAK® MLP33-6
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9166BQ-T1-E3 si9166.pdf
SI9166BQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG BCK BST 1.5A SYNC 16TSSOP
Frequency - Switching: 200kHz ~ 2MHz
Current - Output: 1.5A (Switch)
Voltage - Input (Max): 6V
Voltage - Input (Min): 2.7V
Number of Outputs: 1
Topology: Buck, Boost
Output Configuration: Positive
Function: Step-Up, Step-Down
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9102DN02-T1-E3 si9102.pdf
Hersteller: Vishay Siliconix
Description: IC REG FLYBCK FWRD 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback, Forward Converter
Output Configuration: Positive, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9108DN02-T1-E3 si9108.pdf
Hersteller: Vishay Siliconix
Description: IC REG FLYBK ISOLATED 4V 20PLCC
Type: Flyback, Isolated
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
PWM Type: Current Mode
Voltage - Input: 10 V ~ 120 V
Voltage - Output: 4V
Number of Outputs: 1
Output Type: Fixed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9104DW-T1-E3 Si9104.pdf
SI9104DW-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG FLYBCK FWRD 16SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback, Forward Converter
Output Configuration: Positive, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9100DJ02-E3 si9100.pdf
SI9100DJ02-E3
Hersteller: Vishay Siliconix
Description: IC REG MULTI CONFG 14DIP
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 70V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Buck, Buck-Boost, Flyback, Forward Converter
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Down, Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9100DN02-E3 si9100.pdf
Hersteller: Vishay Siliconix
Description: IC REG MULTI CONFG 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 70V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Buck, Buck-Boost, Flyback, Forward Converter
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Down, Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9102DN02-E3 si9102.pdf
Hersteller: Vishay Siliconix
Description: IC REG FLYBCK FWRD 20PLCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback, Forward Converter
Output Configuration: Positive, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9108DN02-E3 si9108.pdf
Hersteller: Vishay Siliconix
Description: IC REG FLYBK ISOLATED 4V 20PLCC
Type: Flyback, Isolated
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
PWM Type: Current Mode
Voltage - Input: 10 V ~ 120 V
Voltage - Output: 4V
Number of Outputs: 1
Output Type: Fixed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9105DN02-T1-E3 si9105.pdf
Hersteller: Vishay Siliconix
Description: IC REG FLYBACK INV 20PLCC
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LCC (J-Lead)
Supplier Device Package: 20-PLCC (9x9)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9104DW-E3 si9104.pdf
SI9104DW-E3
Hersteller: Vishay Siliconix
Description: IC REG MULTI CONFIG 4V 16SOIC
Type: Flyback, Forward Converter, Isolated
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
PWM Type: Current Mode
Voltage - Input: 10 V ~ 120 V
Voltage - Output: 4V
Number of Outputs: 1
Output Type: Fixed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9105DN02-E3 si9105.pdf
Hersteller: Vishay Siliconix
Description: IC REG FLYBACK INV 20PLCC
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: No
Frequency - Switching: 40kHz ~ 1MHz
Voltage - Input (Max): 120V
Voltage - Input (Min): 10V
Number of Outputs: 1
Topology: Flyback
Output Configuration: Positive or Negative, Isolation Capable
Function: Step-Up/Step-Down
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4166DY-T1-GE3 si4166dy.pdf
SI4166DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30.5A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4166
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Part Status: Active
auf Bestellung 2528 Stücke
Lieferzeit 21-28 Tag (e)
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SI4204DY-T1-GE3 si4204dy.pdf
SI4204DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8-SOIC
FET Type: 2 N-Channel (Dual)
Part Status: Active
Base Part Number: SI4204
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5686 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 413 Stücke - Preis und Lieferfrist anzeigen
SI4472DY-T1-GE3 si4472dy.pdf
SI4472DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Power - Max: 5.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4472DY-T1-GE3 si4472dy.pdf
SI4472DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Power - Max: 5.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 1692 Stücke
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SI4472DY-T1-GE3 si4472dy.pdf
SI4472DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Power - Max: 5.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 1692 Stücke
Lieferzeit 21-28 Tag (e)
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SI7852ADP-T1-E3 si7852ad.pdf
SI7852ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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SI7852ADP-T1-E3 si7852ad.pdf
SI7852ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SUD50P06-15L-E3 sud50p06.pdf
SUD50P06-15L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUM40N10-30-E3 72134.pdf
SUM40N10-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
IRF9630STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR880DP-T1-GE3 sir880dp.pdf
SIR880DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR880DP-T1-GE3 sir880dp.pdf
SIR880DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
auf Bestellung 1820 Stücke
Lieferzeit 21-28 Tag (e)
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IRFZ44STRRPBF 91293.pdf
IRFZ44STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE820DF-T1-GE3 sie820df.pdf
SIE820DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A POLARPAK
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 730 Stücke - Preis und Lieferfrist anzeigen
SIE820DF-T1-GE3 sie820df.pdf
SIE820DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 730 Stücke
Lieferzeit 21-28 Tag (e)
SIE726DF-T1-GE3 sie726df.pdf
SIE726DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 98 Stücke - Preis und Lieferfrist anzeigen
SIE726DF-T1-GE3 sie726df.pdf
SIE726DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 98 Stücke
Lieferzeit 21-28 Tag (e)
SI7431DP-T1-E3 si7431dp.pdf
SI7431DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFBC40STRLPBF 91116.pdf
IRFBC40STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6137 Stücke - Preis und Lieferfrist anzeigen
IRFL9110TRPBF техническая информация sihfl911.pdf
IRFL9110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: P-Channel
Base Part Number: IRFL9110
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15278 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 862 Stücke - Preis und Lieferfrist anzeigen
DG303BDY-E3 71402.pdf
DG303BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14SOIC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-SOIC
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 55 Stücke - Preis und Lieferfrist anzeigen
2+ 15.03 EUR
10+ 13.51 EUR
25+ 12.77 EUR
100+ 11.07 EUR
250+ 10.5 EUR
DG303BDJ-E3 71402.pdf
DG303BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14DIP
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: DG303
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -74dB @ 500kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Charge Injection: 8pC
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Part Status: Active
auf Bestellung 560 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1004 Stücke - Preis und Lieferfrist anzeigen
SI6913DQ-T1-GE3 si6913dq.pdf
SI6913DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1524 Stücke - Preis und Lieferfrist anzeigen
DG419BDY-T1-E3 dg417b.pdf
DG419BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -88dB @ 1MHz
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 38pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQR40N10-25_GE3 sqr40n10-25.pdf
SQR40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252 REV
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Packaging: Cut Tape (CT)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1998 Stücke - Preis und Lieferfrist anzeigen
SQ3426EV-T1_GE3 sq3426ev.pdf
SQ3426EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ3426
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
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Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
SQ3426EV-T1_GE3 sq3426ev.pdf
SQ3426EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Base Part Number: SQ3426
Package / Case: SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18330 Stücke - Preis und Lieferfrist anzeigen
IRF9Z34STRRPBF sihf9z34.pdf
IRF9Z34STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 485 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 279 Stücke - Preis und Lieferfrist anzeigen
4+ 7.12 EUR
10+ 6.41 EUR
100+ 5.25 EUR
SI1013CX-T1-GE3 si1013cx.pdf
SI1013CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 450MA SC89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Base Part Number: SI1013
Manufacturer: Vishay Siliconix
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 18582 Stücke
Lieferzeit 21-28 Tag (e)
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DG1411EEN-T1-GE4 dg1411e.pdf
DG1411EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH QUAD SPST 16QFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH101DN-T1-GE3 sish101dn.pdf
SISH101DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16.9A/35A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Manufacturer: Vishay Siliconix
Base Part Number: SISH101
auf Bestellung 7405 Stücke
Lieferzeit 21-28 Tag (e)
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SQP10250E_GE3 sqp10250e.pdf
SQP10250E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 53A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
SQM60N06-15_GE3 sqm60n06.pdf
SQM60N06-15_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 56A TO263
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SQM60N
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 68 Stücke
Lieferzeit 21-28 Tag (e)
SQP100N04-3M6_GE3 sqp100n04-3m6.pdf
SQP100N04-3M6_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 252 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.59 EUR
10+ 5.02 EUR
100+ 4.04 EUR
SI1062X-T1-GE3 si1062x.pdf
SI1062X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-3
Base Part Number: SI1062
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
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SI1062X-T1-GE3 si1062x.pdf
SI1062X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1062
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220mW (Ta)
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SI1013CX-T1-GE3 si1013cx.pdf
SI1013CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 450MA SC89-3
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 760mOhm @ 400mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1013
Manufacturer: Vishay Siliconix
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Vgs (Max): ±8V
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SI2302CDS-T1-E3 si2302cds.pdf
SI2302CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2371EDS-T1-GE3 si2371eds.pdf
SI2371EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.8A SOT-23
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2371
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2347DS-T1-GE3 si2347ds.pdf
SI2347DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2347
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1012CR-T1-GE3 si1012cr.pdf
SI1012CR-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC75A
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-75A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 240mW (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1315DL-T1-GE3 si1315dl.pdf
SI1315DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.9A SC70-3
Base Part Number: SI1315
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 112pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2356DS-T1-GE3 si2356ds.pdf
SI2356DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 4.3A TO236
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3456DDV-T1-E3 si3456ddv.pdf
SI3456DDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6TSOP
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
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SI1424EDH-T1-GE3 si1424ed.pdf
SI1424EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4A SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Vishay Siliconix
Base Part Number: SI1424
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1489EDH-T1-GE3 si1489ed.pdf
SI1489EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 2A SOT-363
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2318CDS-T1-GE3 si2318cd.pdf
SI2318CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.6A SOT23-3
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1317DL-T1-GE3 si1317dl.pdf
SI1317DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SOT323
Base Part Number: SI1317
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI1077X-T1-GE3 si1077x.pdf
SI1077X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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