Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11814) > Seite 44 nach 197

Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 39 40 41 42 43 44 45 46 47 48 49 57 76 95 114 133 152 171 190 197  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Siliconix si2323ds.pdf Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4378DY-T1-GE3 SI4378DY-T1-GE3 Vishay Siliconix si4378dy.pdf Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4401BDY-T1-GE3 SI4401BDY-T1-GE3 Vishay Siliconix si4401bd.pdf Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.55 EUR
5000+1.52 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4430BDY-T1-GE3 SI4430BDY-T1-GE3 Vishay Siliconix si4430bd.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4436DY-T1-GE3 SI4436DY-T1-GE3 Vishay Siliconix si4436dy.pdf Description: MOSFET N-CH 60V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4559ADY-T1-GE3 SI4559ADY-T1-GE3 Vishay Siliconix si4559ady.pdf Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W, 3.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4630DY-T1-GE3 SI4630DY-T1-GE3 Vishay Siliconix 73685.pdf Description: MOSFET N-CH 25V 40A 8-SOIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4686DY-T1-GE3 SI4686DY-T1-GE3 Vishay Siliconix si4686dy.pdf Description: MOSFET N-CH 30V 18.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.15 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4800BDY-T1-GE3 SI4800BDY-T1-GE3 Vishay Siliconix si4800bd.pdf Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Vishay Siliconix si4816bd.pdf Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.38 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4825DY-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI5435BDC-T1-GE3 SI5435BDC-T1-GE3 Vishay Siliconix 73137.pdf Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI5447DC-T1-GE3 SI5447DC-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 20V 3.5A 1206-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6410DQ-T1-GE3 SI6410DQ-T1-GE3 Vishay Siliconix 70661.pdf Description: MOSFET N-CH 30V 8TSSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 Vishay Siliconix si6415dq.pdf Description: MOSFET P-CH 30V 6.5A 8TSSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6423DQ-T1-GE3 SI6423DQ-T1-GE3 Vishay Siliconix 72257.pdf Description: MOSFET P-CH 12V 8.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 400µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.38 EUR
6000+1.3 EUR
9000+1.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6433BDQ-T1-GE3 SI6433BDQ-T1-GE3 Vishay Siliconix 72511.pdf Description: MOSFET P-CH 12V 4A 8-TSSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6459BDQ-T1-GE3 SI6459BDQ-T1-GE3 Vishay Siliconix 72518.pdf Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3 Vishay Siliconix 72018.pdf Description: MOSFET P-CH 20V 6.2A 8-TSSOP
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6925ADQ-T1-GE3 SI6925ADQ-T1-GE3 Vishay Siliconix 72623.pdf Description: MOSFET 2N-CH 20V 3.3A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6926ADQ-T1-GE3 SI6926ADQ-T1-GE3 Vishay Siliconix 72754.pdf Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
6000+0.71 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6928DQ-T1-GE3 SI6928DQ-T1-GE3 Vishay Siliconix 70663.pdf Description: MOSFET 2N-CH 30V 4A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6954ADQ-T1-GE3 SI6954ADQ-T1-GE3 Vishay Siliconix 71130.pdf Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.73 EUR
6000+0.67 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6963BDQ-T1-GE3 SI6963BDQ-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7106DN-T1-GE3 SI7106DN-T1-GE3 Vishay Siliconix si7106dn.pdf Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7107DN-T1-GE3 SI7107DN-T1-GE3 Vishay Siliconix si7107dn.pdf Description: MOSFET P-CH 20V 9.8A 1212-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7108DN-T1-GE3 SI7108DN-T1-GE3 Vishay Siliconix si7108dn.pdf Description: MOSFET N-CH 20V 14A PPAK1212-8
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.88 EUR
6000+1.82 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7112DN-T1-GE3 SI7112DN-T1-GE3 Vishay Siliconix si7112dn.pdf Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.51 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7113DN-T1-GE3 SI7113DN-T1-GE3 Vishay Siliconix si7113dn.pdf Description: MOSFET P-CH 100V 13.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.25 EUR
6000+1.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7114DN-T1-GE3 SI7114DN-T1-GE3 Vishay Siliconix si7114dn.pdf Description: MOSFET N-CH 30V 11.7A 1212-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7116DN-T1-GE3 SI7116DN-T1-GE3 Vishay Siliconix si7116dn.pdf Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.9 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7216DN-T1-GE3 SI7216DN-T1-GE3 Vishay Siliconix si7216dn.pdf Description: MOSFET 2N-CH 40V 6A PPAK 1212
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7220DN-T1-GE3 SI7220DN-T1-GE3 Vishay Siliconix si7220dn.pdf Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7308DN-T1-GE3 SI7308DN-T1-GE3 Vishay Siliconix si7308dn.pdf Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+0.81 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7366DP-T1-GE3 SI7366DP-T1-GE3 Vishay Siliconix 72296.pdf Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7386DP-T1-GE3 SI7386DP-T1-GE3 Vishay Siliconix si7386dp.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7411DN-T1-GE3 SI7411DN-T1-GE3 Vishay Siliconix 72399.pdf Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7414DN-T1-GE3 SI7414DN-T1-GE3 Vishay Siliconix 71738.pdf Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7415DN-T1-GE3 SI7415DN-T1-GE3 Vishay Siliconix si7415dn.pdf Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.43 EUR
6000+1.33 EUR
9000+1.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7430DP-T1-GE3 SI7430DP-T1-GE3 Vishay Siliconix si7430dp.pdf Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7434DP-T1-GE3 SI7434DP-T1-GE3 Vishay Siliconix si7434dp.pdf Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.87 EUR
6000+2.76 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7450DP-T1-GE3 SI7450DP-T1-GE3 Vishay Siliconix si7450dp.pdf Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7456DP-T1-GE3 SI7456DP-T1-GE3 Vishay Siliconix 71603.pdf Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7459DP-T1-GE3 SI7459DP-T1-GE3 Vishay Siliconix si7459dp.pdf Description: MOSFET P-CH 30V 13A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7461DP-T1-GE3 SI7461DP-T1-GE3 Vishay Siliconix si7461dp.pdf Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7463DP-T1-GE3 SI7463DP-T1-GE3 Vishay Siliconix si7463dp.pdf Description: MOSFET P-CH 40V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Siliconix 73113.pdf Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.92 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7478DP-T1-GE3 SI7478DP-T1-GE3 Vishay Siliconix si7478dp.pdf Description: MOSFET N-CH 60V 15A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7483ADP-T1-GE3 SI7483ADP-T1-GE3 Vishay Siliconix 73025.pdf Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7489DP-T1-GE3 SI7489DP-T1-GE3 Vishay Siliconix si7489dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7540DP-T1-GE3 SI7540DP-T1-GE3 Vishay Siliconix si7540dp.pdf Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7818DN-T1-GE3 SI7818DN-T1-GE3 Vishay Siliconix si7818dn.pdf Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7820DN-T1-GE3 SI7820DN-T1-GE3 Vishay Siliconix si7820dn.pdf Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7842DP-T1-GE3 SI7842DP-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7858ADP-T1-GE3 SI7858ADP-T1-GE3 Vishay Siliconix 73164.pdf Description: MOSFET N-CH 12V 20A PPAK SO-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 Vishay Siliconix si7892bd.pdf Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix si7898dp.pdf Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.59 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7922DN-T1-GE3 SI7922DN-T1-GE3 Vishay Siliconix 72031.pdf Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7945DP-T1-GE3 SI7945DP-T1-GE3 Vishay Siliconix 72090.pdf Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix si7958dp.pdf Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI2323DS-T1-GE3 si2323ds.pdf
SI2323DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4378DY-T1-GE3 si4378dy.pdf
SI4378DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4401BDY-T1-GE3 si4401bd.pdf
SI4401BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.55 EUR
5000+1.52 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4430BDY-T1-GE3 si4430bd.pdf
SI4430BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4436DY-T1-GE3 si4436dy.pdf
SI4436DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4559ADY-T1-GE3 si4559ady.pdf
SI4559ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W, 3.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4630DY-T1-GE3 73685.pdf
SI4630DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4686DY-T1-GE3 si4686dy.pdf
SI4686DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.15 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4800BDY-T1-GE3 si4800bd.pdf
SI4800BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4816BDY-T1-GE3 si4816bd.pdf
SI4816BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.38 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4825DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI5435BDC-T1-GE3 73137.pdf
SI5435BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI5447DC-T1-GE3
SI5447DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.5A 1206-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6410DQ-T1-GE3 70661.pdf
SI6410DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6415DQ-T1-GE3 si6415dq.pdf
SI6415DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6423DQ-T1-GE3 72257.pdf
SI6423DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 400µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.38 EUR
6000+1.3 EUR
9000+1.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6433BDQ-T1-GE3 72511.pdf
SI6433BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6459BDQ-T1-GE3 72518.pdf
SI6459BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6463BDQ-T1-GE3 72018.pdf
SI6463BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6925ADQ-T1-GE3 72623.pdf
SI6925ADQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.3A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6926ADQ-T1-GE3 72754.pdf
SI6926ADQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
6000+0.71 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6928DQ-T1-GE3 70663.pdf
SI6928DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6954ADQ-T1-GE3 71130.pdf
SI6954ADQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.73 EUR
6000+0.67 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6963BDQ-T1-GE3
SI6963BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7106DN-T1-GE3 si7106dn.pdf
SI7106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7107DN-T1-GE3 si7107dn.pdf
SI7107DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7108DN-T1-GE3 si7108dn.pdf
SI7108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.88 EUR
6000+1.82 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7112DN-T1-GE3 si7112dn.pdf
SI7112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.51 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7113DN-T1-GE3 si7113dn.pdf
SI7113DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.25 EUR
6000+1.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7114DN-T1-GE3 si7114dn.pdf
SI7114DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7116DN-T1-GE3 si7116dn.pdf
SI7116DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.9 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7216DN-T1-GE3 si7216dn.pdf
SI7216DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7220DN-T1-GE3 si7220dn.pdf
SI7220DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7308DN-T1-GE3 si7308dn.pdf
SI7308DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.82 EUR
6000+0.81 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7366DP-T1-GE3 72296.pdf
SI7366DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7386DP-T1-GE3 si7386dp.pdf
SI7386DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7411DN-T1-GE3 72399.pdf
SI7411DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7414DN-T1-GE3 71738.pdf
SI7414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7415DN-T1-GE3 si7415dn.pdf
SI7415DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.43 EUR
6000+1.33 EUR
9000+1.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7430DP-T1-GE3 si7430dp.pdf
SI7430DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7434DP-T1-GE3 si7434dp.pdf
SI7434DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.87 EUR
6000+2.76 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7450DP-T1-GE3 si7450dp.pdf
SI7450DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7456DP-T1-GE3 71603.pdf
SI7456DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7459DP-T1-GE3 si7459dp.pdf
SI7459DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7461DP-T1-GE3 si7461dp.pdf
SI7461DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7463DP-T1-GE3 si7463dp.pdf
SI7463DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7465DP-T1-GE3 73113.pdf
SI7465DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.92 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7478DP-T1-GE3 si7478dp.pdf
SI7478DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7483ADP-T1-GE3 73025.pdf
SI7483ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7489DP-T1-GE3 si7489dp.pdf
SI7489DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7540DP-T1-GE3 si7540dp.pdf
SI7540DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7818DN-T1-GE3 si7818dn.pdf
SI7818DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7820DN-T1-GE3 si7820dn.pdf
SI7820DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7842DP-T1-GE3
SI7842DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7858ADP-T1-GE3 73164.pdf
SI7858ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7892BDP-T1-GE3 si7892bd.pdf
SI7892BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7898DP-T1-GE3 si7898dp.pdf
SI7898DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.59 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7922DN-T1-GE3 72031.pdf
SI7922DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7945DP-T1-GE3 72090.pdf
SI7945DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7958DP-T1-GE3 si7958dp.pdf
SI7958DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 39 40 41 42 43 44 45 46 47 48 49 57 76 95 114 133 152 171 190 197  [ Nächste Seite >> ]