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Name: SI1034X-T1-GE3
Brand: Vishay Siliconix
SKU: 1995601-3
Price: 18.56 EUR
Availability: InStock

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SI1034X-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 0.18A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)

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25+	0.86 EUR
100+	0.55 EUR
500+	0.42 EUR
1000+	0.38 EUR

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SI1065X-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 12V 1.18A SC89-6

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SI1071X-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V

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SI2304BDS-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V

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SI2306BDS-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V

auf Bestellung 7857 Stücke:

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21+	1.02 EUR
50+	0.75 EUR
100+	0.67 EUR
500+	0.51 EUR

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SI2312BDS-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V

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SI2351DS-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V

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SI4378DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 19A 8-SOIC

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SI4401BDY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V

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10+	3.34 EUR
100+	2.3 EUR
500+	1.86 EUR
1000+	1.7 EUR

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SI4430BDY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V

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SI4436DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V

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SI4559ADY-T1-GE3

Vishay Siliconix

Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC

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SI4630DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 40A 8-SOIC

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5+	4.38 EUR
10+	3.94 EUR
100+	3.17 EUR
500+	2.59 EUR

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SI4686DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 18.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V

auf Bestellung 6009 Stücke:

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6+	4.05 EUR
10+	2.58 EUR
50+	1.95 EUR
100+	1.75 EUR
500+	1.39 EUR

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SI4800BDY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V

auf Bestellung 893 Stücke:

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13+	1.67 EUR
100+	1.09 EUR
500+	0.86 EUR

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SI4816BDY-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 3390 Stücke:

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10+	3 EUR
100+	2.07 EUR
500+	1.65 EUR
1000+	1.52 EUR

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SI5435BDC-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 4.3A 1206-8

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SI6410DQ-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 8TSSOP

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SI6415DQ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 6.5A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 5069 Stücke:

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10+	2.84 EUR
100+	2.26 EUR
500+	1.92 EUR
1000+	1.63 EUR

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SI6423DQ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 12V 8.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 400µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V

auf Bestellung 19389 Stücke:

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10+	3.06 EUR
100+	2.09 EUR
500+	1.68 EUR
1000+	1.55 EUR

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SI6433BDQ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 12V 4A 8-TSSOP

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SI6435ADQ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 4.7A 8-TSSOP

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SI6459BDQ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 2.2A 8-TSSOP

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SI6463BDQ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 6.2A 8-TSSOP

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SI6562DQ-T1-GE3

Vishay Siliconix

Description: MOSFET N/P-CH 20V 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

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SI6925ADQ-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 3.3A 8-TSSOP

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SI6926ADQ-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 8906 Stücke:

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15+	1.49 EUR
100+	1.15 EUR
500+	0.98 EUR
1000+	0.8 EUR

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SI6928DQ-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 30V 4A 8-TSSOP

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SI6954ADQ-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

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8+	2.76 EUR
12+	1.75 EUR
100+	1.15 EUR
500+	0.9 EUR
1000+	0.82 EUR

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SI6963BDQ-T1-GE3

Vishay Siliconix

Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

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SI7106DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 12.5A PPAK1212-8

auf Bestellung 990 Stücke:

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7+	3.2 EUR
10+	2.88 EUR
100+	2.25 EUR
500+	1.86 EUR

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SI7107DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 9.8A 1212-8

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SI7108DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 14A PPAK1212-8

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6+	4.13 EUR
10+	3.7 EUR
100+	2.98 EUR
500+	2.44 EUR
1000+	2.02 EUR

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SI7112DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.5W (Ta)

auf Bestellung 11302 Stücke:

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10+	3.56 EUR
50+	2.73 EUR
100+	2.45 EUR
500+	1.98 EUR

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SI7113DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 100V 13.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 8099 Stücke:

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5+	4.41 EUR
10+	2.83 EUR
100+	1.92 EUR
500+	1.54 EUR
1000+	1.4 EUR

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SI7114DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 11.7A 1212-8

Produkt ist nicht verfügbar

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SI7116DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V

auf Bestellung 5043 Stücke:

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4+	6.18 EUR
10+	4.02 EUR
100+	2.78 EUR
500+	2.25 EUR
1000+	2.08 EUR

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Si7120DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 6.3A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V

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SI7216DN-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 40V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)

auf Bestellung 495 Stücke:

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5+	4.24 EUR
10+	2.71 EUR
50+	2.05 EUR
100+	1.83 EUR

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SI7220DN-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)

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SI7308DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V

auf Bestellung 8027 Stücke:

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8+	2.62 EUR
12+	1.77 EUR
100+	1.24 EUR
500+	1 EUR
1000+	0.93 EUR

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SI7366DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 13A PPAK SO-8

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SI7386DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V

auf Bestellung 28706 Stücke:

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11+	2.07 EUR
13+	1.69 EUR
100+	1.32 EUR
500+	1.12 EUR
1000+	1.11 EUR

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SI7411DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 7.5A 1212-8

Produkt ist nicht verfügbar

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SI7414DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V

auf Bestellung 5689 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.52 EUR
10+	2.39 EUR
100+	1.69 EUR
500+	1.38 EUR
1000+	1.29 EUR

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SI7415DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V

auf Bestellung 10967 Stücke:

Lieferzeit 10-14 Tag (e)

5+	4.93 EUR
10+	3.17 EUR
100+	2.17 EUR
500+	1.74 EUR
1000+	1.61 EUR

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SI7430DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V

auf Bestellung 4665 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.64 EUR
10+	5.02 EUR
50+	3.89 EUR
100+	3.52 EUR
500+	2.94 EUR

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SI7434DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 13089 Stücke:

Lieferzeit 10-14 Tag (e)

4+	5.9 EUR
10+	4.96 EUR
100+	4.01 EUR
500+	3.57 EUR
1000+	3.05 EUR

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SI7450DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 3002 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.22 EUR
10+	4.74 EUR
100+	3.31 EUR
500+	2.73 EUR

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SI7456DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

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SI7459DP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 13A PPAK SO-8

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SI7461DP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Drain to Source Voltage (Vdss): 60 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V

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SI7463DP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 40V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

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SI7465DP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 5056 Stücke:

Lieferzeit 10-14 Tag (e)

7+	3.37 EUR
10+	2.14 EUR
100+	1.44 EUR
500+	1.14 EUR
1000+	1.05 EUR

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SI7483ADP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 14A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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SI7485DP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 12.5A PPAK SO-8

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SI7489DP-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 100V 28A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

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SI7501DN-T1-GE3

Vishay Siliconix

Description: MOSFET N/P-CH 30V 5.4A 1212-8
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel, Common Drain
Mounting Type: Surface Mount
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA

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SI7540DP-T1-GE3

Vishay Siliconix

Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8

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SI7818DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 5709 Stücke:

Lieferzeit 10-14 Tag (e)

7+	3.06 EUR
10+	2.5 EUR
100+	1.94 EUR
500+	1.64 EUR
1000+	1.34 EUR

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SI1034X-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)

auf Bestellung 5211 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
16+	1.38 EUR
25+	0.86 EUR
100+	0.55 EUR
500+	0.42 EUR
1000+	0.38 EUR

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SI1065X-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SC89-6

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SI1071X-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V

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SI2304BDS-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V

Produkt ist nicht verfügbar

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SI2306BDS-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V

auf Bestellung 7857 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
13+	1.65 EUR
21+	1.02 EUR
50+	0.75 EUR
100+	0.67 EUR
500+	0.51 EUR

Mindestbestellmenge: 13 Stücke

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SI2312BDS-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SI2351DS-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V

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SI4378DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC

auf Bestellung 6620 Stücke:

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SI4401BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V

auf Bestellung 9472 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	5.19 EUR
10+	3.34 EUR
100+	2.3 EUR
500+	1.86 EUR
1000+	1.7 EUR

Mindestbestellmenge: 5 Stücke

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SI4430BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V

Produkt ist nicht verfügbar

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SI4436DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V

Produkt ist nicht verfügbar

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SI4559ADY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC

Produkt ist nicht verfügbar

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SI4630DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC

auf Bestellung 698 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	4.38 EUR
10+	3.94 EUR
100+	3.17 EUR
500+	2.59 EUR

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SI4686DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V

auf Bestellung 6009 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	4.05 EUR
10+	2.58 EUR
50+	1.95 EUR
100+	1.75 EUR
500+	1.39 EUR

Mindestbestellmenge: 6 Stücke

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SI4800BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V

auf Bestellung 893 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
8+	2.64 EUR
13+	1.67 EUR
100+	1.09 EUR
500+	0.86 EUR

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SI4816BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 3390 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	4.74 EUR
10+	3 EUR
100+	2.07 EUR
500+	1.65 EUR
1000+	1.52 EUR

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SI5435BDC-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8

Produkt ist nicht verfügbar

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SI6410DQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8TSSOP

Produkt ist nicht verfügbar

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SI6415DQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 5069 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.44 EUR
10+	2.84 EUR
100+	2.26 EUR
500+	1.92 EUR
1000+	1.63 EUR

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SI6423DQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 400µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V

auf Bestellung 19389 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	4.76 EUR
10+	3.06 EUR
100+	2.09 EUR
500+	1.68 EUR
1000+	1.55 EUR

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SI6433BDQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP

Produkt ist nicht verfügbar

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SI6435ADQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 8-TSSOP

Produkt ist nicht verfügbar

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SI6459BDQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP

Produkt ist nicht verfügbar

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SI6463BDQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP

Produkt ist nicht verfügbar

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SI6562DQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

Produkt ist nicht verfügbar

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SI6925ADQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.3A 8-TSSOP

Produkt ist nicht verfügbar

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SI6926ADQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 8906 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
12+	1.82 EUR
15+	1.49 EUR
100+	1.15 EUR
500+	0.98 EUR
1000+	0.8 EUR

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SI6928DQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8-TSSOP

Produkt ist nicht verfügbar

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SI6954ADQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 9919 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
8+	2.76 EUR
12+	1.75 EUR
100+	1.15 EUR
500+	0.9 EUR
1000+	0.82 EUR

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SI6963BDQ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)

Produkt ist nicht verfügbar

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SI7106DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK1212-8

auf Bestellung 990 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.2 EUR
10+	2.88 EUR
100+	2.25 EUR
500+	1.86 EUR

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SI7107DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8

Produkt ist nicht verfügbar

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SI7108DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8

auf Bestellung 42079 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	4.13 EUR
10+	3.7 EUR
100+	2.98 EUR
500+	2.44 EUR
1000+	2.02 EUR

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SI7112DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.5W (Ta)

auf Bestellung 11302 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
4+	5.51 EUR
10+	3.56 EUR
50+	2.73 EUR
100+	2.45 EUR
500+	1.98 EUR

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SI7113DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 8099 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	4.41 EUR
10+	2.83 EUR
100+	1.92 EUR
500+	1.54 EUR
1000+	1.4 EUR

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SI7114DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8

Produkt ist nicht verfügbar

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SI7116DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V

auf Bestellung 5043 Stücke:

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Anzahl	Privatkunde
4+	6.18 EUR
10+	4.02 EUR
100+	2.78 EUR
500+	2.25 EUR
1000+	2.08 EUR

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Si7120DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.3A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V

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SI7216DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 20.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)

auf Bestellung 495 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	4.24 EUR
10+	2.71 EUR
50+	2.05 EUR
100+	1.83 EUR

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SI7220DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)

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SI7308DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V

auf Bestellung 8027 Stücke:

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Anzahl	Privatkunde
8+	2.62 EUR
12+	1.77 EUR
100+	1.24 EUR
500+	1 EUR
1000+	0.93 EUR

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SI7366DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8

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SI7386DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V

auf Bestellung 28706 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
11+	2.07 EUR
13+	1.69 EUR
100+	1.32 EUR
500+	1.12 EUR
1000+	1.11 EUR

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SI7411DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8

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SI7414DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V

auf Bestellung 5689 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.52 EUR
10+	2.39 EUR
100+	1.69 EUR
500+	1.38 EUR
1000+	1.29 EUR

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SI7415DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V

auf Bestellung 10967 Stücke:

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Anzahl	Privatkunde
5+	4.93 EUR
10+	3.17 EUR
100+	2.17 EUR
500+	1.74 EUR
1000+	1.61 EUR

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SI7430DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V

auf Bestellung 4665 Stücke:

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Anzahl	Privatkunde
3+	7.64 EUR
10+	5.02 EUR
50+	3.89 EUR
100+	3.52 EUR
500+	2.94 EUR

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SI7434DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 13089 Stücke:

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Anzahl	Privatkunde
4+	5.9 EUR
10+	4.96 EUR
100+	4.01 EUR
500+	3.57 EUR
1000+	3.05 EUR

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SI7450DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 3002 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3+	7.22 EUR
10+	4.74 EUR
100+	3.31 EUR
500+	2.73 EUR

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SI7456DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

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SI7459DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8

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SI7461DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Drain to Source Voltage (Vdss): 60 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V

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SI7463DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

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SI7465DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 5056 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.37 EUR
10+	2.14 EUR
100+	1.44 EUR
500+	1.14 EUR
1000+	1.05 EUR

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SI7483ADP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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SI7485DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12.5A PPAK SO-8

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SI7489DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

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SI7501DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel, Common Drain
Mounting Type: Surface Mount
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA

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SI7540DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8

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SI7818DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 5709 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.06 EUR
10+	2.5 EUR
100+	1.94 EUR
500+	1.64 EUR
1000+	1.34 EUR

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