Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10948) > Seite 45 nach 183
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI5519DU-T1-GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 6A CHIPFET |
Produkt ist nicht verfügbar |
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SI7102DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 35A 1212-8 |
auf Bestellung 3676 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7123DN-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 10.2A 1212-8 |
auf Bestellung 17508 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7160DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 20A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7186DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 32A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7194DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 60A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7328DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 35A 1212-8 |
Produkt ist nicht verfügbar |
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SI7718DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 35A 1212-8 |
Produkt ist nicht verfügbar |
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SI7720DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 12A 1212-8 |
Produkt ist nicht verfügbar |
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SI7758DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 60A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7784DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 35A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7788DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 50A PPAK SO-8 |
auf Bestellung 6870 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7790DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A PPAK SO-8 |
auf Bestellung 691 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7802DN-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 1.24A 1212-8 |
Produkt ist nicht verfügbar |
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SI7882DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 13A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SI7948DP-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 60V 3A PPAK SO-8 |
Produkt ist nicht verfügbar |
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Si7980DP-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 8A PPAK SO-8 |
auf Bestellung 8085 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA408DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 4.5A SC70-6 |
auf Bestellung 2757 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA415DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 12A SC70-6 |
auf Bestellung 5849 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA417DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 12A SC70-6 |
Produkt ist nicht verfügbar |
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SIA419DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 12A SC70-6 |
Produkt ist nicht verfügbar |
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SIA426DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 4.5A SC70-6 |
auf Bestellung 8006 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA430DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 12A SC70-6 |
auf Bestellung 3605 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA813DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4.5A SC70-6 |
Produkt ist nicht verfügbar |
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SIA911EDJ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.5A SC70-6 |
Produkt ist nicht verfügbar |
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SIA913DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 4.5A SC70-6 |
Produkt ist nicht verfügbar |
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SIA917DJ-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.5A SC70-6 |
Produkt ist nicht verfügbar |
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SIB415DK-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 9A SC75-6 |
Produkt ist nicht verfügbar |
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SIB417DK-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 9A SC75-6 |
Produkt ist nicht verfügbar |
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SIB419DK-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 9A SC75-6 |
Produkt ist nicht verfügbar |
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SIB800EDK-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 1.5A SC75-6 |
Produkt ist nicht verfügbar |
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SIB914DK-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6 |
Produkt ist nicht verfügbar |
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SIR850DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 30A PPAK SO-8 |
auf Bestellung 2352 Stücke: Lieferzeit 21-28 Tag (e) |
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SiR892DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 50A PPAK SO-8 |
auf Bestellung 5163 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4110DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 17.3A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4170DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 30A 8-SOIC |
Produkt ist nicht verfügbar |
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Si4226DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 8A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4448DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 12V 50A 8-SOIC |
auf Bestellung 2347 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4660DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 23.1A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4668DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 16.2A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4866BDY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 21.5A 8-SOIC |
auf Bestellung 7138 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1012R-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 500MA SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-75A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
auf Bestellung 158447 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1013R-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 350MA SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-75A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V |
auf Bestellung 96000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1013X-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 350MA SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1016X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 0.485A SC89 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1022R-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 330MA SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-75A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1023X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.37A SC89-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1024X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 485MA SC89 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1026X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SC89 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 272713 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1029X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 60V 0.305A SC89 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1032R-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 140MA SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-75A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1032X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 200MA SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
auf Bestellung 2634 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1034X-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 0.18A SC89-6 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1065X-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 1.18A SC89-6 |
Produkt ist nicht verfügbar |
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SI1071X-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 0.96A SC89-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 960mA (Ta) Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2304BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 2.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V |
auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2306BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 3.16A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2312BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 3.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2323DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4378DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 19A 8-SOIC |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
SI5519DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Description: MOSFET N/P-CH 20V 6A CHIPFET
Produkt ist nicht verfügbar
SI7102DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A 1212-8
Description: MOSFET N-CH 12V 35A 1212-8
auf Bestellung 3676 Stücke:
Lieferzeit 21-28 Tag (e)SI7123DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.2A 1212-8
Description: MOSFET P-CH 20V 10.2A 1212-8
auf Bestellung 17508 Stücke:
Lieferzeit 21-28 Tag (e)SI7160DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Description: MOSFET N-CH 30V 20A PPAK SO-8
Produkt ist nicht verfügbar
SI7186DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 32A PPAK SO-8
Description: MOSFET N-CH 80V 32A PPAK SO-8
Produkt ist nicht verfügbar
SI7194DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Description: MOSFET N-CH 25V 60A PPAK SO-8
Produkt ist nicht verfügbar
SI7328DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Description: MOSFET N-CH 30V 35A 1212-8
Produkt ist nicht verfügbar
SI7718DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Description: MOSFET N-CH 30V 35A 1212-8
Produkt ist nicht verfügbar
SI7720DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 1212-8
Description: MOSFET N-CH 30V 12A 1212-8
Produkt ist nicht verfügbar
SI7758DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Description: MOSFET N-CH 30V 60A PPAK SO-8
Produkt ist nicht verfügbar
SI7784DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SI7788DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 6870 Stücke:
Lieferzeit 21-28 Tag (e)SI7790DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Description: MOSFET N-CH 40V 50A PPAK SO-8
auf Bestellung 691 Stücke:
Lieferzeit 21-28 Tag (e)SI7802DN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7882DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK SO-8
Description: MOSFET N-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7948DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
Si7980DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
auf Bestellung 8085 Stücke:
Lieferzeit 21-28 Tag (e)SIA408DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Description: MOSFET N-CH 30V 4.5A SC70-6
auf Bestellung 2757 Stücke:
Lieferzeit 21-28 Tag (e)SIA415DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Description: MOSFET P-CH 20V 12A SC70-6
auf Bestellung 5849 Stücke:
Lieferzeit 21-28 Tag (e)SIA417DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A SC70-6
Description: MOSFET P-CH 8V 12A SC70-6
Produkt ist nicht verfügbar
SIA419DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA426DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Description: MOSFET N-CH 20V 4.5A SC70-6
auf Bestellung 8006 Stücke:
Lieferzeit 21-28 Tag (e)SIA430DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
Description: MOSFET N-CH 20V 12A SC70-6
auf Bestellung 3605 Stücke:
Lieferzeit 21-28 Tag (e)SIA813DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA911EDJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA913DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC70-6
Description: MOSFET 2P-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA917DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB415DK-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A SC75-6
Description: MOSFET P-CH 30V 9A SC75-6
Produkt ist nicht verfügbar
SIB417DK-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6
Description: MOSFET P-CH 8V 9A SC75-6
Produkt ist nicht verfügbar
SIB419DK-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC75-6
Description: MOSFET P-CH 12V 9A SC75-6
Produkt ist nicht verfügbar
SIB800EDK-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.5A SC75-6
Description: MOSFET N-CH 20V 1.5A SC75-6
Produkt ist nicht verfügbar
SIB914DK-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Produkt ist nicht verfügbar
SIR850DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Description: MOSFET N-CH 25V 30A PPAK SO-8
auf Bestellung 2352 Stücke:
Lieferzeit 21-28 Tag (e)SiR892DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
Description: MOSFET N-CH 25V 50A PPAK SO-8
auf Bestellung 5163 Stücke:
Lieferzeit 21-28 Tag (e)SI4110DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.3A 8-SOIC
Description: MOSFET N-CH 80V 17.3A 8-SOIC
Produkt ist nicht verfügbar
SI4170DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
Si4226DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4448DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 50A 8-SOIC
Description: MOSFET N-CH 12V 50A 8-SOIC
auf Bestellung 2347 Stücke:
Lieferzeit 21-28 Tag (e)SI4660DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 23.1A 8-SOIC
Description: MOSFET N-CH 25V 23.1A 8-SOIC
Produkt ist nicht verfügbar
SI4668DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.2A 8-SOIC
Description: MOSFET N-CH 25V 16.2A 8-SOIC
Produkt ist nicht verfügbar
SI4866BDY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 7138 Stücke:
Lieferzeit 21-28 Tag (e)SI1012R-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Description: MOSFET N-CH 20V 500MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 158447 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.33 EUR |
9000+ | 0.31 EUR |
30000+ | 0.3 EUR |
75000+ | 0.29 EUR |
SI1013R-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.33 EUR |
9000+ | 0.31 EUR |
30000+ | 0.3 EUR |
75000+ | 0.29 EUR |
SI1013X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.4 EUR |
SI1016X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.37 EUR |
6000+ | 0.35 EUR |
9000+ | 0.32 EUR |
SI1022R-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 330MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 330MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.49 EUR |
6000+ | 0.46 EUR |
9000+ | 0.43 EUR |
SI1023X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.4 EUR |
SI1024X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 485MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET 2N-CH 20V 485MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 102000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.43 EUR |
6000+ | 0.41 EUR |
9000+ | 0.38 EUR |
30000+ | 0.37 EUR |
SI1026X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET 2N-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 272713 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.39 EUR |
6000+ | 0.37 EUR |
9000+ | 0.35 EUR |
30000+ | 0.34 EUR |
SI1029X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET N/P-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.4 EUR |
6000+ | 0.38 EUR |
9000+ | 0.36 EUR |
SI1032R-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Description: MOSFET N-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.33 EUR |
15000+ | 0.31 EUR |
SI1032X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 200MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Description: MOSFET N-CH 20V 200MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 2634 Stücke:
Lieferzeit 21-28 Tag (e)SI1034X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89-6
Description: MOSFET 2N-CH 20V 0.18A SC89-6
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.42 EUR |
SI1065X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SC89-6
Description: MOSFET P-CH 12V 1.18A SC89-6
Produkt ist nicht verfügbar
SI1071X-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Produkt ist nicht verfügbar
SI2304BDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 87000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.28 EUR |
9000+ | 0.25 EUR |
75000+ | 0.24 EUR |
SI2306BDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Produkt ist nicht verfügbar
SI2312BDS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.44 EUR |
6000+ | 0.42 EUR |
9000+ | 0.39 EUR |
30000+ | 0.38 EUR |
SI2323DS-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.64 EUR |
6000+ | 0.61 EUR |
9000+ | 0.57 EUR |
SI4378DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)