Die Produkte vishay siliconix

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SIDR638DP-T1-GE3 SIDR638DP-T1-GE3 sidr638dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A PPAK SO-8DC
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620SPBF IRL620SPBF 91302.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 401 Stücke
Lieferzeit 21-28 Tag (e)
IRFI630GPBF IRFI630GPBF 91148.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 598 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 278 Stücke - Preis und Lieferfrist anzeigen
IRF730ASPBF IRF730ASPBF sihf730a.pdf Vishay Siliconix Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP90N04-3M3P-GE3 SUP90N04-3M3P-GE3 sup90n04.pdf Vishay Siliconix Description: MOSFET N-CH 40V 90A TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 5286 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI634GPBF IRFI634GPBF 91149.pdf Vishay Siliconix Description: MOSFET N-CH 250V 5.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 27 Stücke
Lieferzeit 21-28 Tag (e)
IRLI630GPBF IRLI630GPBF sihli630.pdf Vishay Siliconix Description: MOSFET N-CH 200V 6.2A TO220-3
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.7A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: IRLI630
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Manufacturer: Vishay Siliconix
auf Bestellung 1013 Stücke
Lieferzeit 21-28 Tag (e)
SIHF7N60E-E3 SIHF7N60E-E3 sihf7n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 7A TO220
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
auf Bestellung 814 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.29 EUR
10+ 5.64 EUR
100+ 4.54 EUR
500+ 3.73 EUR
SUP53P06-20-E3 SUP53P06-20-E3 sup53p06-20.pdf Vishay Siliconix Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Base Part Number: SUP53
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640PBF IRL640PBF sihl640.pdf Vishay Siliconix Description: MOSFET N-CH 200V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP9140PBF IRFP9140PBF sihfp914.pdf Vishay Siliconix Description: MOSFET P-CH 100V 21A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2016 Stücke - Preis und Lieferfrist anzeigen
IRFI740GPBF IRFI740GPBF sihfi740.pdf Vishay Siliconix Description: MOSFET N-CH 400V 5.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 720 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129 Stücke - Preis und Lieferfrist anzeigen
4+ 7.59 EUR
10+ 6.81 EUR
100+ 5.58 EUR
500+ 4.75 EUR
IRFIBE30GPBF IRFIBE30GPBF 91184.pdf Vishay Siliconix Description: MOSFET N-CH 800V 2.1A TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
auf Bestellung 46 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
IRFI9620GPBF IRFI9620GPBF sihfi962.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 251 Stücke
Lieferzeit 21-28 Tag (e)
IRFIZ48GPBF IRFIZ48GPBF 91190.pdf Vishay Siliconix Description: MOSFET N-CH 60V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1940 Stücke - Preis und Lieferfrist anzeigen
IRFI540GPBF IRFI540GPBF 91144.pdf Vishay Siliconix Description: MOSFET N-CH 100V 17A TO220-3
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 2033 Stücke
Lieferzeit 21-28 Tag (e)
IRFI9Z24GPBF IRFI9Z24GPBF 91171.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8.5A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP12N60E-E3 SIHP12N60E-E3 sihp12n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9630GPBF IRFI9630GPBF 91167.pdf Vishay Siliconix Description: MOSFET P-CH 200V 4.3A TO220-3
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 180 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1674 Stücke - Preis und Lieferfrist anzeigen
IRFIBF20GPBF IRFIBF20GPBF 91185.pdf Vishay Siliconix Description: MOSFET N-CH 900V 1.2A TO220-3
Base Part Number: IRFIBF20
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 720mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP440PBF IRFP440PBF 91228.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Mounting Type: Through Hole
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
SIHF12N60E-E3 SIHF12N60E-E3 sihf12n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 12A TO220
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50APBF IRFS11N50APBF 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30LPBF IRFBE30LPBF 91119.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.1A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP40N10-30-E3 SUP40N10-30-E3 sup40n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
SUP75P03-07-E3 SUP75P03-07-E3 supsub75.pdf Vishay Siliconix Description: MOSFET P-CH 30V 75A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
IRFS9N60APBF IRFS9N60APBF sihs9n60.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
IRFBC20SPBF IRFBC20SPBF 91107.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 88460 Stücke - Preis und Lieferfrist anzeigen
IRFIZ44GPBF IRFIZ44GPBF 91189.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPG30PBF IRFPG30PBF 91252.pdf Vishay Siliconix Description: MOSFET N-CH 1000V 3.1A TO247-3
Base Part Number: IRFPG30
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 187 Stücke
Lieferzeit 21-28 Tag (e)
IRFIBE20GPBF IRFIBE20GPBF 91183.pdf Vishay Siliconix Description: MOSFET N-CH 800V 1.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 38 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
4+ 7.44 EUR
10+ 6.66 EUR
SIHP14N50D-E3 SIHP14N50D-E3 sihp14n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14A TO220AB
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9634GPBF IRFI9634GPBF 91168.pdf Vishay Siliconix Description: MOSFET P-CH 250V 4.1A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRF9630SPBF IRF9630SPBF IRF9630S_SiHF9630S.pdf Vishay Siliconix Description: MOSFET P-CH 200V 6.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tube
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 674 Stücke - Preis und Lieferfrist anzeigen
IRFPC40PBF IRFPC40PBF sihfpc40.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.8A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.1A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 170 Stücke - Preis und Lieferfrist anzeigen
IRFBC30APBF IRFBC30APBF 91108.pdf Vishay Siliconix Description: MOSFET N-CH 600V 3.6A TO220AB
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1985 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
4+ 8.03 EUR
10+ 7.22 EUR
100+ 5.8 EUR
500+ 4.77 EUR
1000+ 4.09 EUR
IRF9540SPBF IRF9540SPBF 91079.pdf Vishay Siliconix Description: MOSFET P-CH 100V 19A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
SIHG22N60S-E3 SIHG22N60S-E3 sihg22n60s.pdf Vishay Siliconix Description: MOSFET N-CH 600V 22A TO247AC
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1762 Stücke - Preis und Lieferfrist anzeigen
SI2301CDS-T1-E3 SI2301CDS-T1-E3 si2301cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.1A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3648 Stücke - Preis und Lieferfrist anzeigen
SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 si1427ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1427
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6177 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 2A SC70-6
Base Part Number: SI1427
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 22 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6177 Stücke - Preis und Lieferfrist anzeigen
SI8447DB-T2-E1 SI8447DB-T2-E1 si8447db.pdf Vishay Siliconix Description: MOSFET P-CH 20V 11A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 11A 6MICRO FOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 135 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 11A MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
auf Bestellung 165 Stücke
Lieferzeit 21-28 Tag (e)
SI2303BDS-T1-E3 SI2303BDS-T1-E3 72065.pdf Vishay Siliconix Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2208168 Stücke - Preis und Lieferfrist anzeigen
SI2305CDS-T1-GE3 SI2305CDS-T1-GE3 si2305cd.pdf Vishay Siliconix Description: MOSFET P-CH 8V 5.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20716 Stücke - Preis und Lieferfrist anzeigen
SI8465DB-T2-E1 SI8465DB-T2-E1 si8465db.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Manufacturer: Vishay Siliconix
Base Part Number: SI8465
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 4MICROFOOT
Base Part Number: SI8465
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
SI1073X-T1-GE3 SI1073X-T1-GE3 si1073x.pdf Vishay Siliconix Description: MOSFET P-CH 30V 0.98A SC89-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 10V
Rds On (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1442DH-T1-GE3 SI1442DH-T1-GE3 si1442dh.pdf Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 682 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11927 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
30+ 0.89 EUR
100+ 0.55 EUR
500+ 0.38 EUR
SIB408DK-T1-GE3 SIB408DK-T1-GE3 sib408dk.pdf Vishay Siliconix Description: MOSFET N-CH 30V 7A PPAK SC75-6L
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 7A PPAK SC75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 7A PPAK SC75-6L
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 8351 Stücke
Lieferzeit 21-28 Tag (e)
SI5853DDC-T1-E3 SI5853DDC-T1-E3 si5853dd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 257 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
auf Bestellung 257 Stücke
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SI1330EDL-T1-GE3 SI1330EDL-T1-GE3 si1330ed.pdf Vishay Siliconix Description: MOSFET N-CH 60V 240MA SC-70-3
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 240MA SC-70-3
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
auf Bestellung 395 Stücke
Lieferzeit 21-28 Tag (e)
SI1417EDH-T1-GE3 SI1417EDH-T1-GE3 si1417ed.pdf Vishay Siliconix Description: MOSFET P-CH 12V 2.7A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Supplier Device Package: SC-70-6 (SOT-363)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1413EDH-T1-GE3 SI1413EDH-T1-GE3 si1413ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.3A SC-70-6
Power Dissipation (Max): 1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1406DH-T1-GE3 SI1406DH-T1-GE3 si1406dh.pdf Vishay Siliconix Description: MOSFET N-CH 20V 3.1A SC-70-6
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2361EES-T1-GE3 SQ2361EES-T1-GE3 sq2361ees.pdf Vishay Siliconix Description: MOSFET P-CH 60V 2.5A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ1431EH-T1-GE3 SQ1431EH-T1-GE3 sq1431eh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
auf Bestellung 906 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 3A SC70
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
auf Bestellung 906 Stücke
Lieferzeit 21-28 Tag (e)
SIA811ADJ-T1-GE3 SIA811ADJ-T1-GE3 sia811adj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
auf Bestellung 2879 Stücke
Lieferzeit 21-28 Tag (e)
SI2328DS-T1-GE3 SI2328DS-T1-GE3 si2328ds.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.15A SOT23-3
Power Dissipation (Max): 730mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1469DH-T1-GE3 SI1469DH-T1-GE3 si1469dh.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
SI8473EDB-T1-E1 SI8473EDB-T1-E1 si8473edb.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 41mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Vgs (Max): ±12V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Base Part Number: SI8473
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V MICROFOOT
Power - Max: 1.1W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 698 Stücke
Lieferzeit 21-28 Tag (e)
SI8497DB-T2-E1 SI8497DB-T2-E1 si8497db.pdf Vishay Siliconix Description: MOSFET P-CH 30V 13A 6MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V
Base Part Number: SI8497
Package / Case: 6-UFBGA
Supplier Device Package: 6-microfoot
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 13A 6MICROFOOT
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI8497
Package / Case: 6-UFBGA
Supplier Device Package: 6-microfoot
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3713 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 13A MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
Package / Case: 6-UFBGA
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V
Supplier Device Package: 6-microfoot
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 4998 Stücke
Lieferzeit 21-28 Tag (e)
TP0202K-T1-E3 TP0202K-T1-E3 71609.pdf Vishay Siliconix Description: MOSFET P-CH 30V 385MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99000 Stücke - Preis und Lieferfrist anzeigen
SI3805DV-T1-GE3 SI3805DV-T1-GE3 si3805dv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.3A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 3.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 420 Stücke
Lieferzeit 21-28 Tag (e)
SI5913DC-T1-GE3 SI5913DC-T1-GE3 si5913dc.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
SIDR638DP-T1-GE3 sidr638dp.pdf
SIDR638DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A PPAK SO-8DC
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620SPBF 91302.pdf
IRL620SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 401 Stücke
Lieferzeit 21-28 Tag (e)
IRFI630GPBF 91148.pdf
IRFI630GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 598 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 278 Stücke - Preis und Lieferfrist anzeigen
IRF730ASPBF sihf730a.pdf
IRF730ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP90N04-3M3P-GE3 sup90n04.pdf
SUP90N04-3M3P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 5286 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI634GPBF 91149.pdf
IRFI634GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 5.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 27 Stücke
Lieferzeit 21-28 Tag (e)
IRLI630GPBF sihli630.pdf
IRLI630GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 6.2A TO220-3
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.7A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: IRLI630
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Manufacturer: Vishay Siliconix
auf Bestellung 1013 Stücke
Lieferzeit 21-28 Tag (e)
SIHF7N60E-E3 sihf7n60e.pdf
SIHF7N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
auf Bestellung 814 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.29 EUR
10+ 5.64 EUR
100+ 4.54 EUR
500+ 3.73 EUR
SUP53P06-20-E3 sup53p06-20.pdf
SUP53P06-20-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Base Part Number: SUP53
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640PBF sihl640.pdf
IRL640PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP9140PBF sihfp914.pdf
IRFP9140PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 21A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2016 Stücke - Preis und Lieferfrist anzeigen
IRFI740GPBF sihfi740.pdf
IRFI740GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 720 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129 Stücke - Preis und Lieferfrist anzeigen
4+ 7.59 EUR
10+ 6.81 EUR
100+ 5.58 EUR
500+ 4.75 EUR
IRFIBE30GPBF 91184.pdf
IRFIBE30GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.1A TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
auf Bestellung 46 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 110 Stücke - Preis und Lieferfrist anzeigen
IRFI9620GPBF sihfi962.pdf
IRFI9620GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 251 Stücke
Lieferzeit 21-28 Tag (e)
IRFIZ48GPBF 91190.pdf
IRFIZ48GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1940 Stücke - Preis und Lieferfrist anzeigen
IRFI540GPBF 91144.pdf
IRFI540GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 17A TO220-3
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 2033 Stücke
Lieferzeit 21-28 Tag (e)
IRFI9Z24GPBF 91171.pdf
IRFI9Z24GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.5A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP12N60E-E3 sihp12n6.pdf
SIHP12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9630GPBF 91167.pdf
IRFI9630GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 4.3A TO220-3
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 180 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1674 Stücke - Preis und Lieferfrist anzeigen
IRFIBF20GPBF 91185.pdf
IRFIBF20GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.2A TO220-3
Base Part Number: IRFIBF20
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 720mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP440PBF 91228.pdf
IRFP440PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Mounting Type: Through Hole
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
SIHF12N60E-E3 sihf12n6.pdf
SIHF12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50APBF 91286.pdf
IRFS11N50APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30LPBF 91119.pdf
IRFBE30LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP40N10-30-E3 sup40n10.pdf
SUP40N10-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
SUP75P03-07-E3 supsub75.pdf
SUP75P03-07-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
IRFS9N60APBF sihs9n60.pdf
IRFS9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
IRFBC20SPBF 91107.pdf
IRFBC20SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 88460 Stücke - Preis und Lieferfrist anzeigen
IRFIZ44GPBF 91189.pdf
IRFIZ44GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPG30PBF 91252.pdf
IRFPG30PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO247-3
Base Part Number: IRFPG30
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 187 Stücke
Lieferzeit 21-28 Tag (e)
IRFIBE20GPBF 91183.pdf
IRFIBE20GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 1.4A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 38 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
4+ 7.44 EUR
10+ 6.66 EUR
SIHP14N50D-E3 sihp14n50d.pdf
SIHP14N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO220AB
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9634GPBF 91168.pdf
IRFI9634GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 4.1A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRF9630SPBF IRF9630S_SiHF9630S.pdf
IRF9630SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tube
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 674 Stücke - Preis und Lieferfrist anzeigen
IRFPC40PBF sihfpc40.pdf
IRFPC40PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.8A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.1A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 170 Stücke - Preis und Lieferfrist anzeigen
IRFBC30APBF 91108.pdf
IRFBC30APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A TO220AB
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1985 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
4+ 8.03 EUR
10+ 7.22 EUR
100+ 5.8 EUR
500+ 4.77 EUR
1000+ 4.09 EUR
IRF9540SPBF 91079.pdf
IRF9540SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
SIHG22N60S-E3 sihg22n60s.pdf
SIHG22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247AC
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2301CDS-T1-E3 si2301cd.pdf
SI2301CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.1A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1427
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SC70-6
Base Part Number: SI1427
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI8447DB-T2-E1 si8447db.pdf
SI8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8447DB-T2-E1 si8447db.pdf
SI8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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SI8447DB-T2-E1 si8447db.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
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SI2303BDS-T1-E3 72065.pdf
SI2303BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2305CDS-T1-GE3 si2305cd.pdf
SI2305CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8465DB-T2-E1 si8465db.pdf
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Manufacturer: Vishay Siliconix
Base Part Number: SI8465
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8465DB-T2-E1 si8465db.pdf
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Base Part Number: SI8465
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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SI8465DB-T2-E1 si8465db.pdf
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
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SI1073X-T1-GE3 si1073x.pdf
SI1073X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.98A SC89-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 10V
Rds On (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1442DH-T1-GE3 si1442dh.pdf
SI1442DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1442DH-T1-GE3 si1442dh.pdf
SI1442DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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23+ 1.17 EUR
30+ 0.89 EUR
100+ 0.55 EUR
500+ 0.38 EUR
SIB408DK-T1-GE3 sib408dk.pdf
SIB408DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
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SIB408DK-T1-GE3 sib408dk.pdf
SIB408DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
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SIB408DK-T1-GE3 sib408dk.pdf
SIB408DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 30V
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SI5853DDC-T1-E3 si5853dd.pdf
SI5853DDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5853DDC-T1-E3 si5853dd.pdf
SI5853DDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
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SI5853DDC-T1-E3 si5853dd.pdf
SI5853DDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
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SI1330EDL-T1-GE3 si1330ed.pdf
SI1330EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC-70-3
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1330EDL-T1-GE3 si1330ed.pdf
SI1330EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC-70-3
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
auf Bestellung 395 Stücke
Lieferzeit 21-28 Tag (e)
SI1417EDH-T1-GE3 si1417ed.pdf
SI1417EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Supplier Device Package: SC-70-6 (SOT-363)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1413EDH-T1-GE3 si1413ed.pdf
SI1413EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC-70-6
Power Dissipation (Max): 1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1406DH-T1-GE3 si1406dh.pdf
SI1406DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.1A SC-70-6
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2361EES-T1-GE3 sq2361ees.pdf
SQ2361EES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SOT23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1812 Stücke - Preis und Lieferfrist anzeigen
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
auf Bestellung 906 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 906 Stücke - Preis und Lieferfrist anzeigen
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
auf Bestellung 906 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 906 Stücke - Preis und Lieferfrist anzeigen
SIA811ADJ-T1-GE3 sia811adj.pdf
SIA811ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2879 Stücke - Preis und Lieferfrist anzeigen
SIA811ADJ-T1-GE3 sia811adj.pdf
SIA811ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
auf Bestellung 2879 Stücke
Lieferzeit 21-28 Tag (e)
SI2328DS-T1-GE3 si2328ds.pdf
SI2328DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.15A SOT23-3
Power Dissipation (Max): 730mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23072 Stücke - Preis und Lieferfrist anzeigen
SI1469DH-T1-GE3 si1469dh.pdf
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 198 Stücke - Preis und Lieferfrist anzeigen
SI1469DH-T1-GE3 si1469dh.pdf
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 99 Stücke - Preis und Lieferfrist anzeigen
SI1469DH-T1-GE3 si1469dh.pdf
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 99 Stücke - Preis und Lieferfrist anzeigen
SI8473EDB-T1-E1 si8473edb.pdf
SI8473EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 41mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Vgs (Max): ±12V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Base Part Number: SI8473
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 698 Stücke - Preis und Lieferfrist anzeigen
SI8473EDB-T1-E1 si8473edb.pdf
SI8473EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Power - Max: 1.1W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 698 Stücke
Lieferzeit 21-28 Tag (e)
SI8497DB-T2-E1 si8497db.pdf
SI8497DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 6MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V
Base Part Number: SI8497
Package / Case: 6-UFBGA
Supplier Device Package: 6-microfoot
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8711 Stücke - Preis und Lieferfrist anzeigen
SI8497DB-T2-E1 si8497db.pdf
SI8497DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 6MICROFOOT
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI8497
Package / Case: 6-UFBGA
Supplier Device Package: 6-microfoot
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3713 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7998 Stücke - Preis und Lieferfrist anzeigen
SI8497DB-T2-E1 si8497db.pdf
SI8497DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
Package / Case: 6-UFBGA
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V
Supplier Device Package: 6-microfoot
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 4998 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6713 Stücke - Preis und Lieferfrist anzeigen
TP0202K-T1-E3 71609.pdf
TP0202K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 385MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99000 Stücke - Preis und Lieferfrist anzeigen
SI3805DV-T1-GE3 si3805dv.pdf
SI3805DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 420 Stücke - Preis und Lieferfrist anzeigen
SI3805DV-T1-GE3 si3805dv.pdf
SI3805DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 420 Stücke
Lieferzeit 21-28 Tag (e)
SI5913DC-T1-GE3 si5913dc.pdf
SI5913DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
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