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Name: SIB452DK-T1-GE3
Brand: Vishay Siliconix
SKU: 1978962-3
Price: 17.76 EUR
Availability: InStock

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SIA917DJ-T1-GE3

Vishay Siliconix

Description: MOSFET 2P-CH 20V 4.5A SC70-6

Produkt ist nicht verfügbar

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SIB413DK-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 9A SC75-6

Produkt ist nicht verfügbar

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SIB414DK-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 8V 9A PPAK SC75-6

Produkt ist nicht verfügbar

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SIB415DK-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 9A SC75-6

Produkt ist nicht verfügbar

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SIB417DK-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 8V 9A SC75-6

Produkt ist nicht verfügbar

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SIB419DK-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 12V 9A SC75-6

Produkt ist nicht verfügbar

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SIB452DK-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 190V 1.5A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 50 V

auf Bestellung 22415 Stücke:

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18+	1 EUR
100+	0.69 EUR
500+	0.56 EUR
1000+	0.51 EUR

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SIB914DK-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6

Produkt ist nicht verfügbar

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SIR402DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V

auf Bestellung 3000 Stücke:

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4+	4.42 EUR
10+	2.86 EUR
100+	1.96 EUR
500+	1.57 EUR
1000+	1.45 EUR

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SIR440DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V

auf Bestellung 11043 Stücke:

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10+	2.57 EUR
100+	1.84 EUR
500+	1.5 EUR

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SIR462DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V

auf Bestellung 33148 Stücke:

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10+	1.81 EUR
12+	1.49 EUR
100+	1.16 EUR
500+	0.98 EUR
1000+	0.8 EUR

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SIR464DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V

auf Bestellung 4681 Stücke:

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8+	2.34 EUR
10+	1.79 EUR
100+	1.27 EUR
500+	1.01 EUR
1000+	0.94 EUR

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SIR466DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V

auf Bestellung 20509 Stücke:

Lieferzeit 10-14 Tag (e)

7+	2.82 EUR
10+	1.78 EUR
100+	1.19 EUR
500+	0.94 EUR
1000+	0.86 EUR

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SIR468DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 40A PPAK SO-8

Produkt ist nicht verfügbar

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SIR470DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 20 V

auf Bestellung 6420 Stücke:

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5+	3.91 EUR
10+	3.24 EUR
100+	2.4 EUR
500+	2.09 EUR

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SIR472DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V

Produkt ist nicht verfügbar

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SIR476DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 60A PPAK SO-8

Produkt ist nicht verfügbar

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SIR492DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 12V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V

Produkt ist nicht verfügbar

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SIR496DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 35A PPAK SO-8

Produkt ist nicht verfügbar

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SIR850DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V

Produkt ist nicht verfügbar

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SIR866DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 60A PPAK SO-8

Produkt ist nicht verfügbar

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SiR888DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5065 pF @ 15 V

Produkt ist nicht verfügbar

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SiR892DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 50A PPAK SO-8

auf Bestellung 5163 Stücke:

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SIS402DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V

auf Bestellung 4271 Stücke:

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4+	4.42 EUR
10+	2.85 EUR
100+	1.95 EUR
500+	1.57 EUR
1000+	1.45 EUR

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SIS426DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 10 V

Produkt ist nicht verfügbar

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SI4108DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 75V 20.5A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 38 V

Produkt ist nicht verfügbar

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SI4110DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 80V 17.3A 8-SOIC

Produkt ist nicht verfügbar

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SI4114DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V

auf Bestellung 281001 Stücke:

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9+	1.99 EUR
11+	1.62 EUR
100+	1.37 EUR
500+	1.35 EUR
1000+	1.32 EUR

Mindestbestellmenge: 9

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SI4116DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 18A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V

auf Bestellung 9630 Stücke:

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8+	2.41 EUR
11+	1.69 EUR
100+	1.24 EUR
500+	0.98 EUR
1000+	0.9 EUR

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SI4122DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 27.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V

auf Bestellung 4973 Stücke:

Lieferzeit 10-14 Tag (e)

5+	4.31 EUR
10+	3.18 EUR
100+	2.34 EUR
500+	1.9 EUR
1000+	1.76 EUR

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SI4126DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 39A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15 V

auf Bestellung 12689 Stücke:

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5+	4.14 EUR
10+	3.14 EUR
100+	2.18 EUR
500+	1.85 EUR

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SI4164DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 30A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V

auf Bestellung 25261 Stücke:

Lieferzeit 10-14 Tag (e)

7+	2.78 EUR
10+	2.1 EUR
100+	1.42 EUR
500+	1.13 EUR
1000+	1.09 EUR

Mindestbestellmenge: 7

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SI4170DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 30A 8-SOIC

Produkt ist nicht verfügbar

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Si4226DY-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 25V 8A 8-SOIC

Produkt ist nicht verfügbar

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SI4431CDY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V

auf Bestellung 31387 Stücke:

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13+	1.46 EUR
16+	1.15 EUR
100+	0.82 EUR
500+	0.72 EUR

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SI4435DDY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V

auf Bestellung 1647 Stücke:

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12+	1.48 EUR
17+	1.04 EUR
100+	0.7 EUR
500+	0.54 EUR
1000+	0.49 EUR

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SI4448DY-T1-E3

Vishay Siliconix

Description: MOSFET N-CH 12V 50A 8-SOIC

auf Bestellung 2347 Stücke:

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SI4459ADY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 29A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V

auf Bestellung 13716 Stücke:

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5+	4.22 EUR
10+	3.04 EUR
100+	2.16 EUR
500+	1.84 EUR

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SI4561DY-T1-GE3

Vishay Siliconix

Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W, 3.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC

Produkt ist nicht verfügbar

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SI4634DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 24.5A 8-SOIC

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SI4660DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 23.1A 8-SOIC

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SI4668DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 16.2A 8-SOIC

Produkt ist nicht verfügbar

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SI4688DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V

Produkt ist nicht verfügbar

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SI4835DDY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V

auf Bestellung 8235 Stücke:

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9+	2.13 EUR
13+	1.42 EUR
100+	1.11 EUR
500+	0.9 EUR

Mindestbestellmenge: 9

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SI4842BDY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V

auf Bestellung 1533 Stücke:

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4+	4.44 EUR
10+	3.39 EUR
100+	2.43 EUR
500+	2.1 EUR
1000+	1.83 EUR

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SI4866BDY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 12V 21.5A 8-SOIC

auf Bestellung 7138 Stücke:

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SI4943CDY-T1-GE3

Vishay Siliconix

Description: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC

auf Bestellung 3369 Stücke:

Lieferzeit 10-14 Tag (e)

5+	3.68 EUR
10+	2.37 EUR
100+	1.62 EUR
500+	1.3 EUR
1000+	1.28 EUR

Mindestbestellmenge: 5

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SI9407BDY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V

auf Bestellung 12499 Stücke:

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7+	2.57 EUR
11+	1.62 EUR
100+	1.09 EUR
500+	0.85 EUR
1000+	0.78 EUR

Mindestbestellmenge: 7

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SI9926CDY-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

auf Bestellung 21469 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.12 EUR
10+	1.87 EUR
100+	1.3 EUR
500+	1 EUR
1000+	0.9 EUR

Mindestbestellmenge: 6

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SI9933CDY-T1-GE3

Vishay Siliconix

Description: MOSFET 2P-CH 20V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

auf Bestellung 16292 Stücke:

Lieferzeit 10-14 Tag (e)

12+	1.51 EUR
19+	0.94 EUR
100+	0.61 EUR
500+	0.47 EUR
1000+	0.43 EUR

Mindestbestellmenge: 12

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SUD19P06-60-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 18.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V

auf Bestellung 44492 Stücke:

Lieferzeit 10-14 Tag (e)

13+	1.44 EUR
15+	1.18 EUR
100+	1.03 EUR
500+	0.87 EUR
1000+	0.8 EUR

Mindestbestellmenge: 13

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SUD23N06-31-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V

auf Bestellung 6646 Stücke:

Lieferzeit 10-14 Tag (e)

8+	2.32 EUR
12+	1.51 EUR
100+	1.03 EUR
500+	0.83 EUR
1000+	0.75 EUR

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SUD50N04-8M8P-4GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 14A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V

auf Bestellung 2770 Stücke:

Lieferzeit 10-14 Tag (e)

13+	1.41 EUR
15+	1.24 EUR
100+	1.1 EUR

Mindestbestellmenge: 13

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SUD50P06-15-GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V

auf Bestellung 5755 Stücke:

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4+	5.02 EUR
10+	3.57 EUR
100+	2.48 EUR
500+	2.02 EUR
1000+	1.87 EUR

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SI1046R-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 0.606A SC75-3

Produkt ist nicht verfügbar

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SI1046X-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 0.606A SC89-3

Produkt ist nicht verfügbar

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SI1069X-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 0.94A SC89-6

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SI5432DC-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 6A 1206-8

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SI5519DU-T1-GE3

Vishay Siliconix

Description: MOSFET N/P-CH 20V 6A CHIPFET

Produkt ist nicht verfügbar

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SI7123DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 10.2A 1212-8

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SIA917DJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6

Produkt ist nicht verfügbar

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SIB413DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC75-6

Produkt ist nicht verfügbar

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SIB414DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 9A PPAK SC75-6

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SIB415DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A SC75-6

Produkt ist nicht verfügbar

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SIB417DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6

Produkt ist nicht verfügbar

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SIB419DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC75-6

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SIB452DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 190V 1.5A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 50 V

auf Bestellung 22415 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
12+	1.48 EUR
18+	1 EUR
100+	0.69 EUR
500+	0.56 EUR
1000+	0.51 EUR

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SIB914DK-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6

Produkt ist nicht verfügbar

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SIR402DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
4+	4.42 EUR
10+	2.86 EUR
100+	1.96 EUR
500+	1.57 EUR
1000+	1.45 EUR

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SIR440DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V

auf Bestellung 11043 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
5+	3.56 EUR
10+	2.57 EUR
100+	1.84 EUR
500+	1.5 EUR

Mindestbestellmenge: 5

Im Einkaufswagen Stück im Wert von UAH

SIR462DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V

auf Bestellung 33148 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
10+	1.81 EUR
12+	1.49 EUR
100+	1.16 EUR
500+	0.98 EUR
1000+	0.8 EUR

Mindestbestellmenge: 10

Im Einkaufswagen Stück im Wert von UAH

SIR464DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V

auf Bestellung 4681 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
8+	2.34 EUR
10+	1.79 EUR
100+	1.27 EUR
500+	1.01 EUR
1000+	0.94 EUR

Mindestbestellmenge: 8

Im Einkaufswagen Stück im Wert von UAH

SIR466DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V

auf Bestellung 20509 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
7+	2.82 EUR
10+	1.78 EUR
100+	1.19 EUR
500+	0.94 EUR
1000+	0.86 EUR

Mindestbestellmenge: 7

Im Einkaufswagen Stück im Wert von UAH

SIR468DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIR470DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 20 V

auf Bestellung 6420 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
5+	3.91 EUR
10+	3.24 EUR
100+	2.4 EUR
500+	2.09 EUR

Mindestbestellmenge: 5

Im Einkaufswagen Stück im Wert von UAH

SIR472DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIR476DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIR492DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 6 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIR496DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIR850DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIR866DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A PPAK SO-8

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SiR888DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5065 pF @ 15 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SiR892DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8

auf Bestellung 5163 Stücke:

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SIS402DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V

auf Bestellung 4271 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
4+	4.42 EUR
10+	2.85 EUR
100+	1.95 EUR
500+	1.57 EUR
1000+	1.45 EUR

Mindestbestellmenge: 4

Im Einkaufswagen Stück im Wert von UAH

SIS426DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 10 V

Produkt ist nicht verfügbar

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SI4108DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 20.5A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 38 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SI4110DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.3A 8-SOIC

Produkt ist nicht verfügbar

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SI4114DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V

auf Bestellung 281001 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
9+	1.99 EUR
11+	1.62 EUR
100+	1.37 EUR
500+	1.35 EUR
1000+	1.32 EUR

Mindestbestellmenge: 9

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SI4116DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 18A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V

auf Bestellung 9630 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
8+	2.41 EUR
11+	1.69 EUR
100+	1.24 EUR
500+	0.98 EUR
1000+	0.9 EUR

Mindestbestellmenge: 8

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SI4122DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 27.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V

auf Bestellung 4973 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
5+	4.31 EUR
10+	3.18 EUR
100+	2.34 EUR
500+	1.9 EUR
1000+	1.76 EUR

Mindestbestellmenge: 5

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SI4126DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 39A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15 V

auf Bestellung 12689 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
5+	4.14 EUR
10+	3.14 EUR
100+	2.18 EUR
500+	1.85 EUR

Mindestbestellmenge: 5

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SI4164DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V

auf Bestellung 25261 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
7+	2.78 EUR
10+	2.1 EUR
100+	1.42 EUR
500+	1.13 EUR
1000+	1.09 EUR

Mindestbestellmenge: 7

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SI4170DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

Si4226DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC

Produkt ist nicht verfügbar

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SI4431CDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V

auf Bestellung 31387 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
13+	1.46 EUR
16+	1.15 EUR
100+	0.82 EUR
500+	0.72 EUR

Mindestbestellmenge: 13

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SI4435DDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V

auf Bestellung 1647 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
12+	1.48 EUR
17+	1.04 EUR
100+	0.7 EUR
500+	0.54 EUR
1000+	0.49 EUR

Mindestbestellmenge: 12

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SI4448DY-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 50A 8-SOIC

auf Bestellung 2347 Stücke:

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SI4459ADY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 29A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V

auf Bestellung 13716 Stücke:

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5+	4.22 EUR
10+	3.04 EUR
100+	2.16 EUR
500+	1.84 EUR

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SI4561DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W, 3.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC

Produkt ist nicht verfügbar

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SI4634DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24.5A 8-SOIC

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SI4660DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 23.1A 8-SOIC

Produkt ist nicht verfügbar

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SI4668DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.2A 8-SOIC

Produkt ist nicht verfügbar

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SI4688DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V

Produkt ist nicht verfügbar

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SI4835DDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V

auf Bestellung 8235 Stücke:

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Anzahl	Preis
9+	2.13 EUR
13+	1.42 EUR
100+	1.11 EUR
500+	0.9 EUR

Mindestbestellmenge: 9

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SI4842BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V

auf Bestellung 1533 Stücke:

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Anzahl	Preis
4+	4.44 EUR
10+	3.39 EUR
100+	2.43 EUR
500+	2.1 EUR
1000+	1.83 EUR

Mindestbestellmenge: 4

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SI4866BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC

auf Bestellung 7138 Stücke:

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SI4943CDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC

auf Bestellung 3369 Stücke:

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Anzahl	Preis
5+	3.68 EUR
10+	2.37 EUR
100+	1.62 EUR
500+	1.3 EUR
1000+	1.28 EUR

Mindestbestellmenge: 5

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SI9407BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V

auf Bestellung 12499 Stücke:

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Anzahl	Preis
7+	2.57 EUR
11+	1.62 EUR
100+	1.09 EUR
500+	0.85 EUR
1000+	0.78 EUR

Mindestbestellmenge: 7

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SI9926CDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

auf Bestellung 21469 Stücke:

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Anzahl	Preis
6+	3.12 EUR
10+	1.87 EUR
100+	1.3 EUR
500+	1 EUR
1000+	0.9 EUR

Mindestbestellmenge: 6

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SI9933CDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

auf Bestellung 16292 Stücke:

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Anzahl	Preis
12+	1.51 EUR
19+	0.94 EUR
100+	0.61 EUR
500+	0.47 EUR
1000+	0.43 EUR

Mindestbestellmenge: 12

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SUD19P06-60-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V

auf Bestellung 44492 Stücke:

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Anzahl	Preis
13+	1.44 EUR
15+	1.18 EUR
100+	1.03 EUR
500+	0.87 EUR
1000+	0.8 EUR

Mindestbestellmenge: 13

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SUD23N06-31-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V

auf Bestellung 6646 Stücke:

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Anzahl	Preis
8+	2.32 EUR
12+	1.51 EUR
100+	1.03 EUR
500+	0.83 EUR
1000+	0.75 EUR

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SUD50N04-8M8P-4GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 14A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V

auf Bestellung 2770 Stücke:

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Anzahl	Preis
13+	1.41 EUR
15+	1.24 EUR
100+	1.1 EUR

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SUD50P06-15-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V

auf Bestellung 5755 Stücke:

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Anzahl	Preis
4+	5.02 EUR
10+	3.57 EUR
100+	2.48 EUR
500+	2.02 EUR
1000+	1.87 EUR

Mindestbestellmenge: 4

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SI1046R-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC75-3

Produkt ist nicht verfügbar

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SI1046X-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC89-3

Produkt ist nicht verfügbar

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SI1069X-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.94A SC89-6

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SI5432DC-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 1206-8

auf Bestellung 3048 Stücke:

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SI5519DU-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET

Produkt ist nicht verfügbar

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SI7123DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.2A 1212-8

auf Bestellung 17508 Stücke:

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