Die Produkte vishay siliconix

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SI1405BDH-T1-GE3 SI1405BDH-T1-GE3 si1405bdh.pdf Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC70-6
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3443CDV-T1-GE3 SI3443CDV-T1-GE3 si3443cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 5.97A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 5.97A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2182 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.35 EUR
23+ 1.17 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.53 EUR
SI3464DV-T1-GE3 SI3464DV-T1-GE3 si3464dv.pdf Vishay Siliconix Description: MOSFET N-CH 20V 8A 6-TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 8A 6-TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 32 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 8A 6-TSOP
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 5958 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI3443CDV-T1-E3 SI3443CDV-T1-E3 si3443cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 5.97A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3443
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8846 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 5.97A 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3443
auf Bestellung 4145 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8846 Stücke - Preis und Lieferfrist anzeigen
SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 si2316bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66528 Stücke - Preis und Lieferfrist anzeigen
SI8406DB-T2-E1 SI8406DB-T2-E1 si8406db.pdf Vishay Siliconix Description: MOSFET N-CH 20V 16A 6MICRO FOOT
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI8406
Package / Case: 6-UFBGA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 16A 6MICRO FOOT
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI8406
Package / Case: 6-UFBGA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
SIA850DJ-T1-GE3 SIA850DJ-T1-GE3 sia850dj.pdf Vishay Siliconix Description: MOSFET N-CH 190V 0.95A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Tc)
Drain to Source Voltage (Vdss): 190V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4420BDY-T1-E3 SI4420BDY-T1-E3 73067.pdf Vishay Siliconix Description: MOSFET N-CH 30V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Part Status: Active
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16000 Stücke - Preis und Lieferfrist anzeigen
IRFL210TRPBF IRFL210TRPBF sihfl210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8296 Stücke - Preis und Lieferfrist anzeigen
SI5429DU-T1-GE3 SI5429DU-T1-GE3 si5429du.pdf Vishay Siliconix Description: MOSFET P-CH 30V 12A PWR PK
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4420BDY-T1-GE3 SI4420BDY-T1-GE3 73067.pdf Vishay Siliconix Description: MOSFET N-CH 30V 9.5A 8SO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 9.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5089 Stücke
Lieferzeit 21-28 Tag (e)
SI8487DB-T1-E1 SI8487DB-T1-E1 si8487db.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4MICROFOOT
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3445ADV-T1-E3 SI3445ADV-T1-E3 72859.pdf Vishay Siliconix Description: MOSFET P-CH 8V 4.4A 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 8V
Supplier Device Package: 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
IRFR220TRLPBF IRFR220TRLPBF sihfr220.pdf Vishay Siliconix Description: MOSFET N-CH 200V 4.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Supplier Device Package: D-Pak
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1275 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 200V 4.8A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1275 Stücke - Preis und Lieferfrist anzeigen
11+ 2.37 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.37 EUR
1000+ 1.08 EUR
SI4134DY-T1-GE3 SI4134DY-T1-GE3 si4134dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 14A 8SO
Base Part Number: SI4134
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 14A 8SO
Base Part Number: SI4134
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 613 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
SI4487DY-T1-GE3 SI4487DY-T1-GE3 si4487dy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 11.6A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 11.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
auf Bestellung 9523 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 11.6A 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 9523 Stücke
Lieferzeit 21-28 Tag (e)
SI4174DY-T1-GE3 SI4174DY-T1-GE3 si4174dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 17A 8-SOIC
Base Part Number: SI4174
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 17A 8-SOIC
Base Part Number: SI4174
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
auf Bestellung 4901 Stücke
Lieferzeit 21-28 Tag (e)
SIA417DJ-T1-GE3 SIA417DJ-T1-GE3 sia417dj.pdf Vishay Siliconix Description: MOSFET P-CH 8V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS414DN-T1-GE3 SIS414DN-T1-GE3 sis414dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 20A 1212-8 PPAK
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Power - Max: 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 20A 1212-8 PPAK
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Power - Max: 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 812 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 20A 1212-8 PPAK
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Power - Max: 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 812 Stücke
Lieferzeit 21-28 Tag (e)
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 sib417aedk.pdf Vishay Siliconix Description: MOSFET P-CH 8V 9A PWRPACK
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 8V 9A PWRPACK
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 8403 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 8V 9A PWRPACK
Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
auf Bestellung 8403 Stücke
Lieferzeit 21-28 Tag (e)
SIS436DN-T1-GE3 SIS436DN-T1-GE3 sis436dn.pdf Vishay Siliconix Description: MOSFET N-CH 25V 16A PPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 25V 16A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V
auf Bestellung 346 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI3493BDV-T1-GE3 SI3493BDV-T1-GE3 si3493bdv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A 6-TSOP
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 8A 6-TSOP
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 44 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.97W
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
auf Bestellung 1924 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI7403BDN-T1-GE3 SI7403BDN-T1-GE3 73333.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A PPAK1212-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI7403
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR014TRPBF IRLR014TRPBF sihlr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 7155 Stücke
Lieferzeit 21-28 Tag (e)
SIS438DN-T1-GE3 SIS438DN-T1-GE3 sis438dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 16A PPAK 1212-8
Base Part Number: SIS438
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1230 Stücke - Preis und Lieferfrist anzeigen
IRF840LPBF IRF840LPBF IRF840L_SiHF840L.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8A TO263AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 sira02dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2990 Stücke - Preis und Lieferfrist anzeigen
SUD25N15-52-E3 SUD25N15-52-E3 sud25n15.pdf Vishay Siliconix Description: MOSFET N-CH 150V 25A TO252
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SUD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 150V 25A TO252
Base Part Number: SUD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
auf Bestellung 865 Stücke
Lieferzeit 21-28 Tag (e)
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SIR872ADP-T1-GE3 SIR872ADP-T1-GE3 sir872adp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Base Part Number: SIR872
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Base Part Number: SIR872
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4248 Stücke
Lieferzeit 21-28 Tag (e)
SIR880ADP-T1-GE3 SIR880ADP-T1-GE3 sir880adp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1792 Stücke
Lieferzeit 21-28 Tag (e)
SUM85N03-06P-E3 SUM85N03-06P-E3 sum85n03.pdf Vishay Siliconix Description: MOSFET N-CH 30V 85A TO263
Base Part Number: SUM85
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4465ADY-T1-E3 SI4465ADY-T1-E3 si4465ad.pdf Vishay Siliconix Description: MOSFET P-CH 8V 8SOIC
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 37080 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 8V 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 37080 Stücke - Preis und Lieferfrist anzeigen
6+ 4.94 EUR
10+ 4.45 EUR
100+ 3.58 EUR
500+ 2.94 EUR
1000+ 2.52 EUR
SIR878ADP-T1-GE3 SIR878ADP-T1-GE3 sir878adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.5W
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.5W
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1581 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 40A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.5W
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1581 Stücke
Lieferzeit 21-28 Tag (e)
SIR494DP-T1-GE3 SIR494DP-T1-GE3 sir494dp.pdf Vishay Siliconix Description: MOSFET N-CH 12V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIR878DP-T1-GE3 SIR878DP-T1-GE3 sir878dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5W (Ta), 44.5W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Obsolete
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9540STRLPBF IRF9540STRLPBF 91079.pdf Vishay Siliconix Description: MOSFET P-CH 100V 19A D2PAK
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4866DY-T1-E3 SI4866DY-T1-E3 si4866dy.pdf Vishay Siliconix Description: MOSFET N-CH 12V 11A 8SO
Base Part Number: SI4866
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 92148 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 12V 11A 8SO
Base Part Number: SI4866
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1722 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 92148 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 12V 11A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4866
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
auf Bestellung 2051 Stücke
Lieferzeit 21-28 Tag (e)
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SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 sqj412ep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 32A PPAK SO-8
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 32A PPAK SO-8
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 1253 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 32A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
auf Bestellung 1253 Stücke
Lieferzeit 21-28 Tag (e)
SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 sij482dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Drain to Source Voltage (Vdss): 80V
Base Part Number: SIJ482
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIJ482
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
auf Bestellung 2004 Stücke
Lieferzeit 21-28 Tag (e)
SIR846ADP-T1-GE3 SIR846ADP-T1-GE3 sir846adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI7137DP-T1-GE3 SI7137DP-T1-GE3 si7137dp.pdf Vishay Siliconix Description: MOSFET P-CH 20V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7868 Stücke - Preis und Lieferfrist anzeigen
SI4190DY-T1-GE3 SI4190DY-T1-GE3 si4190dy.pdf Vishay Siliconix Description: MOSFET N-CH 100V 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1405BDH-T1-GE3 si1405bdh.pdf
SI1405BDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3443CDV-T1-GE3 si3443cd.pdf
SI3443CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.97A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2182 Stücke - Preis und Lieferfrist anzeigen
SI3443CDV-T1-GE3 si3443cd.pdf
SI3443CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.97A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2182 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.35 EUR
23+ 1.17 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.53 EUR
SI3464DV-T1-GE3 si3464dv.pdf
SI3464DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6-TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 38990 Stücke - Preis und Lieferfrist anzeigen
SI3464DV-T1-GE3 si3464dv.pdf
SI3464DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6-TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 32 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38958 Stücke - Preis und Lieferfrist anzeigen
SI3464DV-T1-GE3 si3464dv.pdf
SI3464DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6-TSOP
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 5958 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33032 Stücke - Preis und Lieferfrist anzeigen
SI3443CDV-T1-E3 si3443cd.pdf
SI3443CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.97A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3443
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12991 Stücke - Preis und Lieferfrist anzeigen
SI3443CDV-T1-E3 si3443cd.pdf
SI3443CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.97A 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3443
auf Bestellung 4145 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8846 Stücke - Preis und Lieferfrist anzeigen
SI2316BDS-T1-GE3 si2316bd.pdf
SI2316BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66528 Stücke - Preis und Lieferfrist anzeigen
SI8406DB-T2-E1 si8406db.pdf
SI8406DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A 6MICRO FOOT
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI8406
Package / Case: 6-UFBGA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
SI8406DB-T2-E1 si8406db.pdf
SI8406DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A 6MICRO FOOT
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI8406
Package / Case: 6-UFBGA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
SIA850DJ-T1-GE3 sia850dj.pdf
SIA850DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 190V 0.95A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Tc)
Drain to Source Voltage (Vdss): 190V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4420BDY-T1-E3 73067.pdf
SI4420BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Part Status: Active
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16000 Stücke - Preis und Lieferfrist anzeigen
IRFL210TRPBF sihfl210.pdf
IRFL210TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8296 Stücke - Preis und Lieferfrist anzeigen
SI5429DU-T1-GE3 si5429du.pdf
SI5429DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PWR PK
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4420BDY-T1-GE3 73067.pdf
SI4420BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8SO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5089 Stücke - Preis und Lieferfrist anzeigen
SI4420BDY-T1-GE3 73067.pdf
SI4420BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5089 Stücke
Lieferzeit 21-28 Tag (e)
SI8487DB-T1-E1 si8487db.pdf
SI8487DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4MICROFOOT
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3445ADV-T1-E3 72859.pdf
SI3445ADV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 4.4A 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 8V
Supplier Device Package: 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
IRFR220TRLPBF sihfr220.pdf
IRFR220TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Supplier Device Package: D-Pak
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3775 Stücke - Preis und Lieferfrist anzeigen
IRFR220TRLPBF sihfr220.pdf
IRFR220TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1275 Stücke - Preis und Lieferfrist anzeigen
11+ 2.37 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.37 EUR
1000+ 1.08 EUR
SI4134DY-T1-GE3 si4134dy.pdf
SI4134DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Base Part Number: SI4134
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 688 Stücke - Preis und Lieferfrist anzeigen
SI4134DY-T1-GE3 si4134dy.pdf
SI4134DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Base Part Number: SI4134
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 613 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
SI4487DY-T1-GE3 si4487dy.pdf
SI4487DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.6A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19046 Stücke - Preis und Lieferfrist anzeigen
SI4487DY-T1-GE3 si4487dy.pdf
SI4487DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
auf Bestellung 9523 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17023 Stücke - Preis und Lieferfrist anzeigen
SI4487DY-T1-GE3 si4487dy.pdf
SI4487DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.6A 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 9523 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17023 Stücke - Preis und Lieferfrist anzeigen
SI4174DY-T1-GE3 si4174dy.pdf
SI4174DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
Base Part Number: SI4174
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4901 Stücke - Preis und Lieferfrist anzeigen
SI4174DY-T1-GE3 si4174dy.pdf
SI4174DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
Base Part Number: SI4174
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
auf Bestellung 4901 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SIA417DJ-T1-GE3 sia417dj.pdf
SIA417DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS414DN-T1-GE3 sis414dn.pdf
SIS414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8 PPAK
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Power - Max: 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1624 Stücke - Preis und Lieferfrist anzeigen
SIS414DN-T1-GE3 sis414dn.pdf
SIS414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8 PPAK
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Power - Max: 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 812 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 812 Stücke - Preis und Lieferfrist anzeigen
SIS414DN-T1-GE3 sis414dn.pdf
SIS414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8 PPAK
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Power - Max: 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 812 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 812 Stücke - Preis und Lieferfrist anzeigen
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16806 Stücke - Preis und Lieferfrist anzeigen
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 8403 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14403 Stücke - Preis und Lieferfrist anzeigen
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
auf Bestellung 8403 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14403 Stücke - Preis und Lieferfrist anzeigen
SIS436DN-T1-GE3 sis436dn.pdf
SIS436DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3346 Stücke - Preis und Lieferfrist anzeigen
SIS436DN-T1-GE3 sis436dn.pdf
SIS436DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V
auf Bestellung 346 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI3493BDV-T1-GE3 si3493bdv.pdf
SI3493BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6-TSOP
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 34968 Stücke - Preis und Lieferfrist anzeigen
SI3493BDV-T1-GE3 si3493bdv.pdf
SI3493BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6-TSOP
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 44 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34924 Stücke - Preis und Lieferfrist anzeigen
SI3493BDV-T1-GE3 si3493bd.pdf
SI3493BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.97W
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
auf Bestellung 1924 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33044 Stücke - Preis und Lieferfrist anzeigen
SI7403BDN-T1-GE3 73333.pdf
SI7403BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI7403
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR014TRPBF sihlr014.pdf
IRLR014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7155 Stücke - Preis und Lieferfrist anzeigen
IRLR014TRPBF sihlr014.pdf
IRLR014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 7155 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIS438DN-T1-GE3 sis438dn.pdf
SIS438DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A PPAK 1212-8
Base Part Number: SIS438
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF840LPBF IRF840L_SiHF840L.pdf
IRF840LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO263AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIRA02DP-T1-GE3 sira02dp.pdf
SIRA02DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2990 Stücke - Preis und Lieferfrist anzeigen
SUD25N15-52-E3 sud25n15.pdf
SUD25N15-52-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SUD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUD25N15-52-E3 sud25n15.pdf
SUD25N15-52-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Base Part Number: SUD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
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SIR872ADP-T1-GE3 sir872adp.pdf
SIR872ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Base Part Number: SIR872
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
auf Bestellung 3000 Stücke
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SIR872ADP-T1-GE3 sir872adp.pdf
SIR872ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Base Part Number: SIR872
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SIR880ADP-T1-GE3 sir880adp.pdf
SIR880ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SIR880ADP-T1-GE3 sir880adp.pdf
SIR880ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR880
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Lieferzeit 21-28 Tag (e)
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SIR880ADP-T1-GE3 sir880adp.pdf
SIR880ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1792 Stücke
Lieferzeit 21-28 Tag (e)
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SUM85N03-06P-E3 sum85n03.pdf
SUM85N03-06P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 85A TO263
Base Part Number: SUM85
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4465ADY-T1-E3 si4465ad.pdf
SI4465ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4465ADY-T1-E3 si4465ad.pdf
SI4465ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
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6+ 4.94 EUR
10+ 4.45 EUR
100+ 3.58 EUR
500+ 2.94 EUR
1000+ 2.52 EUR
SIR878ADP-T1-GE3 sir878adp.pdf
SIR878ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.5W
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR878ADP-T1-GE3 sir878adp.pdf
SIR878ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.5W
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
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SIR878ADP-T1-GE3 sir878adp.pdf
SIR878ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.5W
Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
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SIR494DP-T1-GE3 sir494dp.pdf
SIR494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR494DP-T1-GE3 sir494dp.pdf
SIR494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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SIR494DP-T1-GE3 sir494dp.pdf
SIR494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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SIR878DP-T1-GE3 sir878dp.pdf
SIR878DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5W (Ta), 44.5W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Obsolete
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9540STRLPBF 91079.pdf
IRF9540STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A D2PAK
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4866DY-T1-E3 si4866dy.pdf
SI4866DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8SO
Base Part Number: SI4866
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI4866DY-T1-E3 si4866dy.pdf
SI4866DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8SO
Base Part Number: SI4866
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SI4866DY-T1-E3 si4866dy.pdf
SI4866DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4866
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
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SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
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SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 83W
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SIJ482DP-T1-GE3 sij482dp.pdf
SIJ482DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Drain to Source Voltage (Vdss): 80V
Base Part Number: SIJ482
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIJ482DP-T1-GE3 sij482dp.pdf
SIJ482DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIJ482
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
auf Bestellung 2004 Stücke
Lieferzeit 21-28 Tag (e)
SIR846ADP-T1-GE3 sir846adp.pdf
SIR846ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
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SIR846ADP-T1-GE3 sir846adp.pdf
SIR846ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
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SI7137DP-T1-GE3 si7137dp.pdf
SI7137DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
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SI4190DY-T1-GE3 si4190dy.pdf
SI4190DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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