Die Produkte vishay siliconix

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SI5913DC-T1-GE3 SI5913DC-T1-GE3 si5913dc.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
auf Bestellung 624 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 624 Stücke
Lieferzeit 21-28 Tag (e)
SI1400DL-T1-GE3 SI1400DL-T1-GE3 si1400dl.pdf Vishay Siliconix Description: MOSFET N-CH 20V 1.6A SC-70-6
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 766 Stücke - Preis und Lieferfrist anzeigen
SIC772CD-T1-GE3 SIC772CD-T1-GE3 sic772cd.pdf Vishay Siliconix Description: IC MOSFET DRIVER N-CH 40MLP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: DrMOS
Current - Output / Channel: 40A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: Out of Bounds
Supplier Device Package: PowerPAK® MLP66-40
Base Part Number: SIC772
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG33N60E-E3 sihg33n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 33A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1902DL-T1-E3 SI1902DL-T1-E3 si1902dl.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1902
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
auf Bestellung 193591 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
SI1400DL-T1-GE3 SI1400DL-T1-GE3 si1400dl.pdf Vishay Siliconix Description: MOSFET N-CH 20V 1.6A SC-70-6
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
auf Bestellung 383 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 1.6A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 383 Stücke
Lieferzeit 21-28 Tag (e)
SI4620DY-T1-GE3 SI4620DY-T1-GE3 si4620dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 6A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 268 Stücke
Lieferzeit 21-28 Tag (e)
SI4829DY-T1-GE3 SI4829DY-T1-GE3 si4829dy.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 2A 8-SOIC
Supplier Device Package: 8-SO
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
auf Bestellung 532 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 2A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Supplier Device Package: 8-SO
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 532 Stücke
Lieferzeit 21-28 Tag (e)
SI1467DH-T1-GE3 SI1467DH-T1-GE3 si1467dh.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC-70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1467
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC-70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1467
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 2562 Stücke
Lieferzeit 21-28 Tag (e)
SQ3442EV-T1-GE3 SQ3442EV-T1-GE3 sq3442ev.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4.3A 6TSOP
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 4.3A 6TSOP
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
SQ3456BEV-T1-GE3 SQ3456BEV-T1-GE3 67934.pdf Vishay Siliconix Description: MOSFET N-CH 30V 7.8A 6TSOP
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 7.8A 6TSOP
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 7.8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
SI5401DC-T1-E3 SI5401DC-T1-E3 73225.pdf Vishay Siliconix Description: MOSFET P-CH 20V 5.2A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4446DY-T1-GE3 SI4446DY-T1-GE3 73661.pdf Vishay Siliconix Description: MOSFET N-CH 40V 3.9A 8-SOIC
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR014TRPBF IRFR014TRPBF sihfr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 31 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.55 EUR
12+ 2.27 EUR
SUP70090E-GE3 SUP70090E-GE3 sup70090e.pdf Vishay Siliconix Description: MOSFET N-CH 100V 50A TO-220
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
SI4447DY-T1-GE3 SI4447DY-T1-GE3 73662.pdf Vishay Siliconix Description: MOSFET P-CH 40V 3.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 40V 3.3A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1779 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 40V 3.3A 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
auf Bestellung 1779 Stücke
Lieferzeit 21-28 Tag (e)
SIR412DP-T1-GE3 SIR412DP-T1-GE3 sir412dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 20A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 25V 20A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 940 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 25V 20A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 940 Stücke
Lieferzeit 21-28 Tag (e)
SIA416DJ-T1-GE3 SIA416DJ-T1-GE3 sia416dj.pdf Vishay Siliconix Description: MOSFET N-CH 100V 11.3A SC70-6L
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 11.3A SC70-6L
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Package / Case: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 3410 Stücke
Lieferzeit 21-28 Tag (e)
SI5499DC-T1-GE3 SI5499DC-T1-GE3 73321.pdf Vishay Siliconix Description: MOSFET P-CH 8V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 8V 6A 1206-8
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 444 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 8V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 444 Stücke
Lieferzeit 21-28 Tag (e)
SQ3460EV-T1-GE3 SQ3460EV-T1-GE3 sq3460ev.pdf Vishay Siliconix Description: MOSFET N-CH 20V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 8A 6TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 541 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 8A 6TSOP
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 541 Stücke
Lieferzeit 21-28 Tag (e)
SI2327DS-T1-E3 SI2327DS-T1-E3 73240.pdf Vishay Siliconix Description: MOSFET P-CH 200V 0.38A SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2327
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4464DY-T1-GE3 SI4464DY-T1-GE3 72051.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.7A 8SO
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3910 Stücke - Preis und Lieferfrist anzeigen
SI3469DV-T1-GE3 SI3469DV-T1-GE3 si3469dv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 5A 6TSOP
Base Part Number: SI3469
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 5A 6TSOP
Base Part Number: SI3469
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2524 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SIR410DP-T1-GE3 SIR410DP-T1-GE3 sir410d.pdf Vishay Siliconix Description: MOSFET N-CH 20V 35A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR410
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10468 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 35A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Base Part Number: SIR410
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10468 Stücke - Preis und Lieferfrist anzeigen
SIS430DN-T1-GE3 SIS430DN-T1-GE3 sis430dn.pdf Vishay Siliconix Description: MOSFET N-CH 25V 35A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 25V 35A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 88 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 25V 35A PPAK 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 25V
auf Bestellung 88 Stücke
Lieferzeit 21-28 Tag (e)
SI7784DP-T1-GE3 SI7784DP-T1-GE3 si7784dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG303BDY-T1-E3 DG303BDY-T1-E3 71402.pdf Vishay Siliconix Description: IC SWITCH CMOS 14SOIC
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-SOIC
On-State Resistance (Max): 50Ohm
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 247 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1465 Stücke - Preis und Lieferfrist anzeigen
2+ 15.29 EUR
10+ 13.72 EUR
25+ 12.97 EUR
100+ 11.24 EUR
SUD19P06-60L-E3 SUD19P06-60L-E3 sud19p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 19A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1630 Stücke - Preis und Lieferfrist anzeigen
SIS452DN-T1-GE3 SIS452DN-T1-GE3 sis452dn.pdf Vishay Siliconix Description: MOSFET N-CH 12V 35A 1212-8 PPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 6V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 12V 35A 1212-8 PPAK
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 6V
auf Bestellung 2388 Stücke
Lieferzeit 21-28 Tag (e)
SI4463BDY-T1-GE3 SI4463BDY-T1-GE3 si4463bd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9.8A 8SO
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1611 Stücke - Preis und Lieferfrist anzeigen
IRF9510STRLPBF IRF9510STRLPBF sihf9510.pdf Vishay Siliconix Description: MOSFET P-CH 100V 4A D2PAK
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
auf Bestellung 7150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17632 Stücke - Preis und Lieferfrist anzeigen
800+ 2.56 EUR
1600+ 2.19 EUR
Vishay Siliconix Description: MOSFET P-CH 100V 4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 7150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17632 Stücke - Preis und Lieferfrist anzeigen
7+ 4.32 EUR
10+ 3.88 EUR
100+ 3.12 EUR
SI4396DY-T1-GE3 SI4396DY-T1-GE3 74252.pdf Vishay Siliconix Description: MOSFET N-CH 30V 16A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1675pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 16A 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1675pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
auf Bestellung 546 Stücke
Lieferzeit 21-28 Tag (e)
SI4850EY-T1-GE3 SI4850EY-T1-GE3 71146.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2997 Stücke - Preis und Lieferfrist anzeigen
SI4636DY-T1-GE3 SI4636DY-T1-GE3 si4636dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V
Power - Max: 4.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V
Power - Max: 4.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 211 Stücke
Lieferzeit 21-28 Tag (e)
SI4421DY-T1-E3 SI4421DY-T1-E3 si4421dy.pdf Vishay Siliconix Description: MOSFET P-CH 20V 10A 8SO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 101617 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-GE3 SI4896DY-T1-GE3 71300.pdf Vishay Siliconix Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5744 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
auf Bestellung 52 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5744 Stücke - Preis und Lieferfrist anzeigen
SIR844DP-T1-GE3 SIR844DP-T1-GE3 sir844dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 50W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 25V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 50W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 25V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 50W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 si7858bd.pdf Vishay Siliconix Description: MOSFET N-CH 12V 40A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7858
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 84000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 12V 40A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7858
auf Bestellung 6981 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 84000 Stücke - Preis und Lieferfrist anzeigen
SI4488DY-T1-GE3 SI4488DY-T1-GE3 71240.pdf Vishay Siliconix Description: MOSFET N-CH 150V 3.5A 8SO
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 868 Stücke - Preis und Lieferfrist anzeigen
SI7456DDP-T1-GE3 SI7456DDP-T1-GE3 si7456ddp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Base Part Number: SI7456
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 27.8A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 35.7W
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1461 Stücke
Lieferzeit 21-28 Tag (e)
SIHP8N50D-E3 SIHP8N50D-E3 sihp8n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8.7A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9640STRLPBF IRF9640STRLPBF IRF(SiHF)9640(S,L).pdf техническая информация Vishay Siliconix Description: MOSFET P-CH 200V 11A D2PAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1441 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 200V 11A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 394 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1441 Stücke - Preis und Lieferfrist anzeigen
5+ 6.08 EUR
10+ 5.48 EUR
100+ 4.4 EUR
SIHB16N50C-E3 SIHB16N50C-E3 sihp16n5.pdf Vishay Siliconix Description: MOSFET N-CH 500V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 990 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 998 Stücke - Preis und Lieferfrist anzeigen
2+ 16.41 EUR
10+ 14.73 EUR
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SIE864DF-T1-GE3 SIE864DF-T1-GE3 SIE864DF.pdf Vishay Siliconix Description: MOSFET N-CH 30V 45A POLARPAK
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (U)
Package / Case: 10-PolarPAK® (U)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 45A POLARPAK
Supplier Device Package: 10-PolarPAK® (U)
Package / Case: 10-PolarPAK® (U)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
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Vishay Siliconix Description: MOSFET N-CH 30V 45A POLARPAK
Supplier Device Package: 10-PolarPAK® (U)
Package / Case: 10-PolarPAK® (U)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 526 Stücke
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SI5913DC-T1-GE3 si5913dc.pdf
SI5913DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
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SI5913DC-T1-GE3 si5913dc.pdf
SI5913DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
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SI1400DL-T1-GE3 si1400dl.pdf
SI1400DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC-70-6
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC772CD-T1-GE3 sic772cd.pdf
SIC772CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 40MLP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: DrMOS
Current - Output / Channel: 40A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: Out of Bounds
Supplier Device Package: PowerPAK® MLP66-40
Base Part Number: SIC772
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG33N60E-E3 sihg33n60e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1902DL-T1-E3 si1902dl.pdf
SI1902DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1902
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
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SI1400DL-T1-GE3 si1400dl.pdf
SI1400DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC-70-6
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
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SI1400DL-T1-GE3 si1400dl.pdf
SI1400DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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SI4620DY-T1-GE3 si4620dy.pdf
SI4620DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4620DY-T1-GE3 si4620dy.pdf
SI4620DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI4829DY-T1-GE3 si4829dy.pdf
SI4829DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4829DY-T1-GE3 si4829dy.pdf
SI4829DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A 8-SOIC
Supplier Device Package: 8-SO
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
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SI4829DY-T1-GE3 si4829dy.pdf
SI4829DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Supplier Device Package: 8-SO
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
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SI1467DH-T1-GE3 si1467dh.pdf
SI1467DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1467
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SI1467DH-T1-GE3 si1467dh.pdf
SI1467DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1467
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SI1467DH-T1-GE3 si1467dh.pdf
SI1467DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
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SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 20V
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SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
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SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
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SI5401DC-T1-E3 73225.pdf
SI5401DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4446DY-T1-GE3 73661.pdf
SI4446DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3.9A 8-SOIC
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR014TRPBF sihfr014.pdf
IRFR014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 31 Stücke - Preis und Lieferfrist anzeigen
IRFR014TRPBF sihfr014.pdf
IRFR014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 31 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.55 EUR
12+ 2.27 EUR
SUP70090E-GE3 sup70090e.pdf
SUP70090E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO-220
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
SI4447DY-T1-GE3 73662.pdf
SI4447DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4447DY-T1-GE3 73662.pdf
SI4447DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1779 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1779 Stücke - Preis und Lieferfrist anzeigen
SI4447DY-T1-GE3 73662.pdf
SI4447DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
auf Bestellung 1779 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1779 Stücke - Preis und Lieferfrist anzeigen
SIR412DP-T1-GE3 sir412dp.pdf
SIR412DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1880 Stücke - Preis und Lieferfrist anzeigen
SIR412DP-T1-GE3 sir412dp.pdf
SIR412DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 940 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 940 Stücke - Preis und Lieferfrist anzeigen
SIR412DP-T1-GE3 sir412dp.pdf
SIR412DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 940 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 940 Stücke - Preis und Lieferfrist anzeigen
SIA416DJ-T1-GE3 sia416dj.pdf
SIA416DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A SC70-6L
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3410 Stücke - Preis und Lieferfrist anzeigen
SIA416DJ-T1-GE3 sia416dj.pdf
SIA416DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A SC70-6L
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Package / Case: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 3410 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI5499DC-T1-GE3 73321.pdf
SI5499DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 888 Stücke - Preis und Lieferfrist anzeigen
SI5499DC-T1-GE3 73321.pdf
SI5499DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 444 Stücke
Lieferzeit 21-28 Tag (e)
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SI5499DC-T1-GE3 73321.pdf
SI5499DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 444 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 444 Stücke - Preis und Lieferfrist anzeigen
SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1082 Stücke - Preis und Lieferfrist anzeigen
SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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Lieferzeit 21-28 Tag (e)
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SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.6W
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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SI2327DS-T1-E3 73240.pdf
SI2327DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 0.38A SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2327
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4464DY-T1-GE3 72051.pdf
SI4464DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3910 Stücke - Preis und Lieferfrist anzeigen
SI3469DV-T1-GE3 si3469dv.pdf
SI3469DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6TSOP
Base Part Number: SI3469
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35524 Stücke - Preis und Lieferfrist anzeigen
SI3469DV-T1-GE3 si3469dv.pdf
SI3469DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6TSOP
Base Part Number: SI3469
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2524 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SIR410DP-T1-GE3 sir410d.pdf
SIR410DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR410
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12768 Stücke - Preis und Lieferfrist anzeigen
SIR410DP-T1-GE3 sir410d.pdf
SIR410DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Base Part Number: SIR410
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10468 Stücke - Preis und Lieferfrist anzeigen
SIS430DN-T1-GE3 sis430dn.pdf
SIS430DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 35A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 176 Stücke - Preis und Lieferfrist anzeigen
SIS430DN-T1-GE3 sis430dn.pdf
SIS430DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 35A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 88 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 88 Stücke - Preis und Lieferfrist anzeigen
SIS430DN-T1-GE3 sis430dn.pdf
SIS430DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 35A PPAK 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 25V
auf Bestellung 88 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 88 Stücke - Preis und Lieferfrist anzeigen
SI7784DP-T1-GE3 si7784dp.pdf
SI7784DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG303BDY-T1-E3 71402.pdf
DG303BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14SOIC
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Crosstalk: -74dB @ 500kHz
Charge Injection: 8pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-SOIC
On-State Resistance (Max): 50Ohm
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 247 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1465 Stücke - Preis und Lieferfrist anzeigen
2+ 15.29 EUR
10+ 13.72 EUR
25+ 12.97 EUR
100+ 11.24 EUR
SUD19P06-60L-E3 sud19p06.pdf
SUD19P06-60L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 19A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1630 Stücke - Preis und Lieferfrist anzeigen
SIS452DN-T1-GE3 sis452dn.pdf
SIS452DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A 1212-8 PPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 6V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2388 Stücke - Preis und Lieferfrist anzeigen
SIS452DN-T1-GE3 sis452dn.pdf
SIS452DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A 1212-8 PPAK
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 6V
auf Bestellung 2388 Stücke
Lieferzeit 21-28 Tag (e)
SI4463BDY-T1-GE3 si4463bd.pdf
SI4463BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SO
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1611 Stücke - Preis und Lieferfrist anzeigen
IRF9510STRLPBF sihf9510.pdf
IRF9510STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 4A D2PAK
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
auf Bestellung 7150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24782 Stücke - Preis und Lieferfrist anzeigen
800+ 2.56 EUR
1600+ 2.19 EUR
IRF9510STRLPBF sihf9510.pdf
IRF9510STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 7150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24782 Stücke - Preis und Lieferfrist anzeigen
7+ 4.32 EUR
10+ 3.88 EUR
100+ 3.12 EUR
SI4396DY-T1-GE3 74252.pdf
SI4396DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1675pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 546 Stücke - Preis und Lieferfrist anzeigen
SI4396DY-T1-GE3 74252.pdf
SI4396DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1675pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
auf Bestellung 546 Stücke
Lieferzeit 21-28 Tag (e)
SI4850EY-T1-GE3 71146.pdf
SI4850EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2997 Stücke - Preis und Lieferfrist anzeigen
SI4636DY-T1-GE3 si4636dy.pdf
SI4636DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V
Power - Max: 4.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4636DY-T1-GE3 si4636dy.pdf
SI4636DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V
Power - Max: 4.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 211 Stücke
Lieferzeit 21-28 Tag (e)
SI4421DY-T1-E3 si4421dy.pdf
SI4421DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 101617 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-GE3 71300.pdf
SI4896DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5796 Stücke - Preis und Lieferfrist anzeigen
SI4896DY-T1-GE3 71300.pdf
SI4896DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
auf Bestellung 52 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5744 Stücke - Preis und Lieferfrist anzeigen
SIR844DP-T1-GE3 sir844dp.pdf
SIR844DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 50W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR844DP-T1-GE3 sir844dp.pdf
SIR844DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 50W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 751 Stücke - Preis und Lieferfrist anzeigen
SIR844DP-T1-GE3 sir844dp.pdf
SIR844DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 50W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 751 Stücke
Lieferzeit 21-28 Tag (e)
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SI7858BDP-T1-GE3 si7858bd.pdf
SI7858BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7858
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90981 Stücke - Preis und Lieferfrist anzeigen
SI7858BDP-T1-GE3 si7858bd.pdf
SI7858BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 5760pF @ 6V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7858
auf Bestellung 6981 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90000 Stücke - Preis und Lieferfrist anzeigen
SI4488DY-T1-GE3 71240.pdf
SI4488DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 868 Stücke - Preis und Lieferfrist anzeigen
SI7456DDP-T1-GE3 si7456ddp.pdf
SI7456DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Base Part Number: SI7456
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1461 Stücke - Preis und Lieferfrist anzeigen
SI7456DDP-T1-GE3 si7456ddp.pdf
SI7456DDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.8A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 35.7W
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1461 Stücke
Lieferzeit 21-28 Tag (e)
SIHP8N50D-E3 sihp8n50d.pdf
SIHP8N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9640STRLPBF техническая информация IRF(SiHF)9640(S,L).pdf
IRF9640STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1835 Stücke - Preis und Lieferfrist anzeigen
IRF9640STRLPBF техническая информация IRF(SiHF)9640(S,L).pdf
IRF9640STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 394 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1441 Stücke - Preis und Lieferfrist anzeigen
5+ 6.08 EUR
10+ 5.48 EUR
100+ 4.4 EUR
SIHB16N50C-E3 sihp16n5.pdf
SIHB16N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 990 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 998 Stücke - Preis und Lieferfrist anzeigen
2+ 16.41 EUR
10+ 14.73 EUR
100+ 12.07 EUR
500+ 10.27 EUR
SIE864DF-T1-GE3 SIE864DF.pdf
SIE864DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45A POLARPAK
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (U)
Package / Case: 10-PolarPAK® (U)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1052 Stücke - Preis und Lieferfrist anzeigen
SIE864DF-T1-GE3 SIE864DF.pdf
SIE864DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45A POLARPAK
Supplier Device Package: 10-PolarPAK® (U)
Package / Case: 10-PolarPAK® (U)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
auf Bestellung 526 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 526 Stücke - Preis und Lieferfrist anzeigen
SIE864DF-T1-GE3 SIE864DF.pdf
SIE864DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45A POLARPAK
Supplier Device Package: 10-PolarPAK® (U)
Package / Case: 10-PolarPAK® (U)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 526 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 526 Stücke - Preis und Lieferfrist anzeigen
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