Die Produkte vishay siliconix

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SI8821EDB-T2-E1 SI8821EDB-T2-E1 si8821edb.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7002-T1-GE3 2N7002-T1-GE3 70226.pdf Vishay Siliconix Description: MOSFET N-CH 60V 115MA TO236
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2367DS-T1-GE3 SI2367DS-T1-GE3 si2367ds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 3.8A SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 7620 Stücke
Lieferzeit 21-28 Tag (e)
SIA462DJ-T1-GE3 SIA462DJ-T1-GE3 sia462dj.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke
Lieferzeit 21-28 Tag (e)
SI1414DH-T1-GE3 SI1414DH-T1-GE3 si1414dh.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4A SOT-363
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4216 Stücke - Preis und Lieferfrist anzeigen
SI3417DV-T1-GE3 SI3417DV-T1-GE3 si3417dv.pdf Vishay Siliconix Description: MOSFET P-CH 30V 8A 6TSOP
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11397 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6261 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11397 Stücke - Preis und Lieferfrist anzeigen
SI8816EDB-T2-E1 SI8816EDB-T2-E1 si8816edb.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4MICROFOOT
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V MICRO FOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Base Part Number: SI8816
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Package / Case: 4-XFBGA
Supplier Device Package: 4-Microfoot
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 10688 Stücke
Lieferzeit 21-28 Tag (e)
SI1443EDH-T1-GE3 SI1443EDH-T1-GE3 si1443edh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4A SOT-363
Base Part Number: SI1443
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4504 Stücke - Preis und Lieferfrist anzeigen
SI3424CDV-T1-GE3 SI3424CDV-T1-GE3 si3424cdv.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11956 Stücke - Preis und Lieferfrist anzeigen
SI8812DB-T2-E1 SI8812DB-T2-E1 si8812db.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
auf Bestellung 60 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 59 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Supplier Device Package: 4-Microfoot
auf Bestellung 2547 Stücke
Lieferzeit 21-28 Tag (e)
SI2392DS-T1-GE3 SI2392DS-T1-GE3 Si2392DS.pdf Vishay Siliconix Description: MOSFET N-CH 100V 3.1A SOT-23
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3474DV-T1-GE3 SI3474DV-T1-GE3 si3474dv.pdf Vishay Siliconix Description: MOSFET N-CH 100V 3.8A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3474
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6106 Stücke - Preis und Lieferfrist anzeigen
SI8808DB-T2-E1 SI8808DB-T2-E1 si8808db.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4MICROFOOT
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8489EDB-T2-E1 SI8489EDB-T2-E1 si8489edb.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V
auf Bestellung 8605 Stücke
Lieferzeit 21-28 Tag (e)
SIB441EDK-T1-GE3 SIB441EDK-T1-GE3 sib441edk.pdf Vishay Siliconix Description: MOSFET P-CH 12V 9A PPAK SC75-6
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-75-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8806DB-T2-E1 SI8806DB-T2-E1 si8806db.pdf Vishay Siliconix Description: MOSFET N-CH 12V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Part Number: SI8806
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2366DS-T1-GE3 SI2366DS-T1-GE3 si2366ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 5.8A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
Vgs (Max): ±20V
Base Part Number: SI2366
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9812 Stücke - Preis und Lieferfrist anzeigen
SIRA34DP-T1-GE3 SIRA34DP-T1-GE3 sira34dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4622 Stücke - Preis und Lieferfrist anzeigen
SI8805EDB-T2-E1 SI8805EDB-T2-E1 si8805edb.pdf Vishay Siliconix Description: MOSFET P-CH 8V MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17960 Stücke - Preis und Lieferfrist anzeigen
SI8809EDB-T2-E1 si8809edb.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.9A MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1303DL-T1-E3 SI1303DL-T1-E3 71075.pdf Vishay Siliconix Description: MOSFET P-CH 20V 670MA SC70-3
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120018 Stücke - Preis und Lieferfrist anzeigen
SIA440DJ-T1-GE3 SIA440DJ-T1-GE3 sia440dj.pdf Vishay Siliconix Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 12A SC-70
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8380 Stücke
Lieferzeit 21-28 Tag (e)
SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 sia459edj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9A SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 9A SC70
Supplier Device Package: PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 15.6W
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
auf Bestellung 5473 Stücke
Lieferzeit 21-28 Tag (e)
SI1400DL-T1-E3 SI1400DL-T1-E3 si1400dl.pdf Vishay Siliconix Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 6432 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 1.6A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 6432 Stücke
Lieferzeit 21-28 Tag (e)
SI1305DL-T1-GE3 SI1305DL-T1-GE3 71076.pdf Vishay Siliconix Description: MOSFET P-CH G-S 8V SC-70-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI1307EDL-T1-GE3 SI1307EDL-T1-GE3 si1307ed.pdf Vishay Siliconix Description: MOSFET P-CH 12V 0.85A SC-70-3
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1072X-T1-GE3 SI1072X-T1-GE3 si1072x.pdf Vishay Siliconix Description: MOSFET N-CH 30V SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI1031X-T1-GE3 SI1031X-T1-GE3 si1031r.pdf Vishay Siliconix Description: MOSFET P-CH 20V 0.155A SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-75A
Package / Case: SC-75A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1303DL-T1-GE3 SI1303DL-T1-GE3 71075.pdf Vishay Siliconix Description: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs (Max): ±12V
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 si2301bds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2812 Stücke - Preis und Lieferfrist anzeigen
SI2303BDS-T1-GE3 SI2303BDS-T1-GE3 72065.pdf Vishay Siliconix Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2303CDS-T1-E3 SI2303CDS-T1-E3 si2303cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99126 Stücke - Preis und Lieferfrist anzeigen
SI3407DV-T1-GE3 SI3407DV-T1-GE3 si3407dv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3221 Stücke - Preis und Lieferfrist anzeigen
SI3433CDV-T1-E3 SI3433CDV-T1-E3 si3433cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8466EDB-T2-E1 SI8466EDB-T2-E1 si8466edb.pdf Vishay Siliconix Description: MOSFET N-CH 8V 4MICROFOOT
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 700mV @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 8V 3.6A MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-Microfoot
auf Bestellung 5572 Stücke
Lieferzeit 21-28 Tag (e)
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 sia817edj.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 29679 Stücke - Preis und Lieferfrist anzeigen
SIB410DK-T1-GE3 SIB410DK-T1-GE3 sib410dk.pdf Vishay Siliconix Description: MOSFET N-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2342DS-T1-GE3 SI2342DS-T1-GE3 si2342ds.pdf Vishay Siliconix Description: MOSFET N-CH 8V 6A SOT-23
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2342
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28866 Stücke - Preis und Lieferfrist anzeigen
SI2399DS-T1-GE3 SI2399DS-T1-GE3 si2399ds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8469DB-T2-E1 SI8469DB-T2-E1 si8469db.pdf Vishay Siliconix Description: MOSFET P-CH 8V 3.6A MICRO
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA447DJ-T1-GE3 SIA447DJ-T1-GE3 sia447dj.pdf Vishay Siliconix Description: MOSFET P-CH 12V 12A PPAK SC70-6
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA477EDJ-T1-GE3 SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf Vishay Siliconix Description: MOSFET P-CH 12V 12A SC-70-6L
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1789 Stücke - Preis und Lieferfrist anzeigen
TP0101K-T1-GE3 TP0101K-T1-GE3 72692.pdf Vishay Siliconix Description: MOSFET P-CH D-S 20V TO236
FET Feature: Logic Level Gate
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5855CDC-T1-E3 SI5855CDC-T1-E3 si5855cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.7A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 3.7A 1206-8
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 3.7A 1206-8
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
auf Bestellung 7309 Stücke
Lieferzeit 21-28 Tag (e)
SI1441EDH-T1-GE3 SI1441EDH-T1-GE3 si1441ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4A SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1441
Package / Case: 6-TSSOP, SC-88, SOT-363
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1939 Stücke - Preis und Lieferfrist anzeigen
SI3467DV-T1-E3 SI3467DV-T1-E3 72658.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.8A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3851DV-T1-E3 SI3851DV-T1-E3 70978.pdf Vishay Siliconix Description: MOSFET P-CH 30V 1.6A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2343DS-T1-GE3 SI2343DS-T1-GE3 72079.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6764 Stücke - Preis und Lieferfrist anzeigen
SI3467DV-T1-GE3 SI3467DV-T1-GE3 72658.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1067X-T1-GE3 SI1067X-T1-GE3 si1067x.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.06A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2309CDS-T1-E3 SI2309CDS-T1-E3 si2309cd.pdf Vishay Siliconix Description: MOSFET P-CH 60V 1.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIB457EDK-T1-GE3 SIB457EDK-T1-GE3 sib457ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5411 Stücke - Preis und Lieferfrist anzeigen
SQ1470EH-T1-GE3 SQ1470EH-T1-GE3 sq1470eh.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.8A SC70
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3476DV-T1-GE3 SI3476DV-T1-GE3 si3476dv.pdf Vishay Siliconix Description: MOSFET N-CH 80V 4.6A 6TSOP
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET N-CH 80V 4.6A 6TSOP
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4976 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19748 Stücke - Preis und Lieferfrist anzeigen
SQ2348ES-T1_GE3 SQ2348ES-T1_GE3 sq2348es.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8A TO236
Base Part Number: SQ2348
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7555 Stücke - Preis und Lieferfrist anzeigen
SI8472DB-T2-E1 SI8472DB-T2-E1 si8472db.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIB437EDKT-T1-GE3 sib437ed.pdf Vishay Siliconix Description: MOSFET P-CH 8V 9A SC-75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® TSC75-6
Package / Case: PowerPAK® TSC-75-6
Base Part Number: SIB437
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8821EDB-T2-E1 si8821edb.pdf
SI8821EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7002-T1-GE3 70226.pdf
2N7002-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2367DS-T1-GE3 si2367ds.pdf
SI2367DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7620 Stücke - Preis und Lieferfrist anzeigen
SI2367DS-T1-GE3 si2367ds.pdf
SI2367DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 7620 Stücke
Lieferzeit 21-28 Tag (e)
SIA462DJ-T1-GE3 sia462dj.pdf
SIA462DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1595 Stücke - Preis und Lieferfrist anzeigen
SIA462DJ-T1-GE3 sia462dj.pdf
SIA462DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke
Lieferzeit 21-28 Tag (e)
SI1414DH-T1-GE3 si1414dh.pdf
SI1414DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A SOT-363
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4216 Stücke - Preis und Lieferfrist anzeigen
SI3417DV-T1-GE3 si3417dv.pdf
SI3417DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17658 Stücke - Preis und Lieferfrist anzeigen
SI3417DV-T1-GE3 si3417dv.pdf
SI3417DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6261 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14397 Stücke - Preis und Lieferfrist anzeigen
SI8816EDB-T2-E1 si8816edb.pdf
SI8816EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10711 Stücke - Preis und Lieferfrist anzeigen
SI8816EDB-T2-E1 si8816edb.pdf
SI8816EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10688 Stücke - Preis und Lieferfrist anzeigen
SI8816EDB-T2-E1 si8816edb.pdf
SI8816EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V MICRO FOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Base Part Number: SI8816
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Package / Case: 4-XFBGA
Supplier Device Package: 4-Microfoot
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 10688 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23 Stücke - Preis und Lieferfrist anzeigen
SI1443EDH-T1-GE3 si1443edh.pdf
SI1443EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A SOT-363
Base Part Number: SI1443
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4504 Stücke - Preis und Lieferfrist anzeigen
SI3424CDV-T1-GE3 si3424cdv.pdf
SI3424CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11956 Stücke - Preis und Lieferfrist anzeigen
SI8812DB-T2-E1 si8812db.pdf
SI8812DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2607 Stücke - Preis und Lieferfrist anzeigen
SI8812DB-T2-E1 si8812db.pdf
SI8812DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
auf Bestellung 60 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2547 Stücke - Preis und Lieferfrist anzeigen
SI8812DB-T2-E1 si8802db.pdf
SI8812DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 59 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Supplier Device Package: 4-Microfoot
auf Bestellung 2547 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 60 Stücke - Preis und Lieferfrist anzeigen
SI2392DS-T1-GE3 Si2392DS.pdf
SI2392DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT-23
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3474DV-T1-GE3 si3474dv.pdf
SI3474DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3474
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6106 Stücke - Preis und Lieferfrist anzeigen
SI8808DB-T2-E1 si8808db.pdf
SI8808DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8489EDB-T2-E1 si8489edb.pdf
SI8489EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8605 Stücke - Preis und Lieferfrist anzeigen
SI8489EDB-T2-E1 si8489edb.pdf
SI8489EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V
auf Bestellung 8605 Stücke
Lieferzeit 21-28 Tag (e)
SIB441EDK-T1-GE3 sib441edk.pdf
SIB441EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A PPAK SC75-6
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-75-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8806DB-T2-E1 si8806db.pdf
SI8806DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Part Number: SI8806
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2366DS-T1-GE3 si2366ds.pdf
SI2366DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
Vgs (Max): ±20V
Base Part Number: SI2366
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIRA34DP-T1-GE3 sira34dp.pdf
SIRA34DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8805EDB-T2-E1 si8805edb.pdf
SI8805EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
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Lieferzeit 21-28 Tag (e)
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SI8809EDB-T2-E1 si8809edb.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.9A MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1303DL-T1-E3 71075.pdf
SI1303DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA440DJ-T1-GE3 sia440dj.pdf
SIA440DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA440DJ-T1-GE3 sia440dj.pdf
SIA440DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A SC-70
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8380 Stücke
Lieferzeit 21-28 Tag (e)
SIA459EDJ-T1-GE3 sia459edj.pdf
SIA459EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA459EDJ-T1-GE3 sia459edj.pdf
SIA459EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70
Supplier Device Package: PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 15.6W
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
auf Bestellung 5473 Stücke
Lieferzeit 21-28 Tag (e)
SI1400DL-T1-E3 si1400dl.pdf
SI1400DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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SI1400DL-T1-E3 si1400dl.pdf
SI1400DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
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Lieferzeit 21-28 Tag (e)
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SI1400DL-T1-E3 si1400dl.pdf
SI1400DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 6432 Stücke
Lieferzeit 21-28 Tag (e)
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SI1305DL-T1-GE3 71076.pdf
SI1305DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH G-S 8V SC-70-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI1307EDL-T1-GE3 si1307ed.pdf
SI1307EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SC-70-3
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1072X-T1-GE3 si1072x.pdf
SI1072X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1031X-T1-GE3 si1031r.pdf
SI1031X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.155A SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-75A
Package / Case: SC-75A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1303DL-T1-GE3 71075.pdf
SI1303DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs (Max): ±12V
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2301BDS-T1-GE3 si2301bds.pdf
SI2301BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2303BDS-T1-GE3 72065.pdf
SI2303BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2303CDS-T1-E3 si2303cd.pdf
SI2303CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3407DV-T1-GE3 si3407dv.pdf
SI3407DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3433CDV-T1-E3 si3433cd.pdf
SI3433CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8466EDB-T2-E1 si8466edb.pdf
SI8466EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 700mV @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8466EDB-T2-E1 si8466edb.pdf
SI8466EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 3.6A MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-Microfoot
auf Bestellung 5572 Stücke
Lieferzeit 21-28 Tag (e)
SIA817EDJ-T1-GE3 sia817edj.pdf
SIA817EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 29679 Stücke - Preis und Lieferfrist anzeigen
SIB410DK-T1-GE3 sib410dk.pdf
SIB410DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
SI2342DS-T1-GE3 si2342ds.pdf
SI2342DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 6A SOT-23
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2342
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28866 Stücke - Preis und Lieferfrist anzeigen
SI2399DS-T1-GE3 si2399ds.pdf
SI2399DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2155 Stücke - Preis und Lieferfrist anzeigen
SI8469DB-T2-E1 si8469db.pdf
SI8469DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3.6A MICRO
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA447DJ-T1-GE3 sia447dj.pdf
SIA447DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5712 Stücke - Preis und Lieferfrist anzeigen
SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf
SIA477EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC-70-6L
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1789 Stücke - Preis und Lieferfrist anzeigen
TP0101K-T1-GE3 72692.pdf
TP0101K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V TO236
FET Feature: Logic Level Gate
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
SI5855CDC-T1-E3 si5855cd.pdf
SI5855CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14618 Stücke - Preis und Lieferfrist anzeigen
SI5855CDC-T1-E3 si5855cd.pdf
SI5855CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 7309 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13309 Stücke - Preis und Lieferfrist anzeigen
SI5855CDC-T1-E3 si5855cd.pdf
SI5855CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
auf Bestellung 7309 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13309 Stücke - Preis und Lieferfrist anzeigen
SI1441EDH-T1-GE3 si1441ed.pdf
SI1441EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1441
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 1939 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1939 Stücke - Preis und Lieferfrist anzeigen
SI3467DV-T1-E3 72658.pdf
SI3467DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3851DV-T1-E3 70978.pdf
SI3851DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.6A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 83998 Stücke - Preis und Lieferfrist anzeigen
SI2343DS-T1-GE3 72079.pdf
SI2343DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6764 Stücke - Preis und Lieferfrist anzeigen
SI3467DV-T1-GE3 72658.pdf
SI3467DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI1067X-T1-GE3 si1067x.pdf
SI1067X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.06A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2309CDS-T1-E3 si2309cd.pdf
SI2309CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIB457EDK-T1-GE3 sib457ed.pdf
SIB457EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5411 Stücke - Preis und Lieferfrist anzeigen
SQ1470EH-T1-GE3 sq1470eh.pdf
SQ1470EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3476DV-T1-GE3 si3476dv.pdf
SI3476DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 4.6A 6TSOP
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24724 Stücke - Preis und Lieferfrist anzeigen
SI3476DV-T1-GE3 si3476dv.pdf
SI3476DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 4.6A 6TSOP
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4976 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22748 Stücke - Preis und Lieferfrist anzeigen
SQ2348ES-T1_GE3 sq2348es.pdf
SQ2348ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A TO236
Base Part Number: SQ2348
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SI8472DB-T2-E1 si8472db.pdf
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
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SIB437EDKT-T1-GE3 sib437ed.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC-75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® TSC75-6
Package / Case: PowerPAK® TSC-75-6
Base Part Number: SIB437
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