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SI7411DN-T1-GE3 SI7411DN-T1-GE3 Vishay Siliconix 72399.pdf Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar
SI7414DN-T1-GE3 SI7414DN-T1-GE3 Vishay Siliconix 71738.pdf Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 11123 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 8
SI7415DN-T1-GE3 SI7415DN-T1-GE3 Vishay Siliconix si7415dn.pdf Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 29215 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.07 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.75 EUR
Mindestbestellmenge: 8
SI7430DP-T1-GE3 SI7430DP-T1-GE3 Vishay Siliconix si7430dp.pdf Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
auf Bestellung 6035 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 5.67 EUR
100+ 4.58 EUR
500+ 4.07 EUR
1000+ 3.49 EUR
Mindestbestellmenge: 4
SI7434DP-T1-GE3 SI7434DP-T1-GE3 Vishay Siliconix si7434dp.pdf Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 472 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.16 EUR
10+ 7.34 EUR
100+ 6.01 EUR
Mindestbestellmenge: 4
SI7450DP-T1-GE3 SI7450DP-T1-GE3 Vishay Siliconix si7450dp.pdf Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 2854 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.6 EUR
10+ 5.49 EUR
100+ 4.37 EUR
500+ 3.69 EUR
1000+ 3.13 EUR
Mindestbestellmenge: 4
SI7456DP-T1-GE3 SI7456DP-T1-GE3 Vishay Siliconix 71603.pdf Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
auf Bestellung 417 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.46 EUR
10+ 4.9 EUR
100+ 3.94 EUR
Mindestbestellmenge: 5
SI7459DP-T1-GE3 SI7459DP-T1-GE3 Vishay Siliconix si7459dp.pdf Description: MOSFET P-CH 30V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7461DP-T1-GE3 SI7461DP-T1-GE3 Vishay Siliconix si7461dp.pdf Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
auf Bestellung 42077 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.54 EUR
10+ 4.6 EUR
100+ 3.66 EUR
500+ 3.1 EUR
1000+ 2.63 EUR
Mindestbestellmenge: 5
SI7463DP-T1-GE3 SI7463DP-T1-GE3 Vishay Siliconix si7463dp.pdf Description: MOSFET P-CH 40V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
auf Bestellung 2292 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.64 EUR
10+ 6.87 EUR
100+ 5.52 EUR
500+ 4.54 EUR
1000+ 3.76 EUR
Mindestbestellmenge: 4
SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Siliconix 73113.pdf Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 27927 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SI7483ADP-T1-GE3 SI7483ADP-T1-GE3 Vishay Siliconix 73025.pdf Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Produkt ist nicht verfügbar
SI7485DP-T1-GE3 SI7485DP-T1-GE3 Vishay Siliconix 72275.pdf Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7489DP-T1-GE3 SI7489DP-T1-GE3 Vishay Siliconix si7489dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 10694 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.06 EUR
10+ 5.03 EUR
100+ 4.01 EUR
500+ 3.39 EUR
1000+ 2.88 EUR
Mindestbestellmenge: 5
SI7501DN-T1-GE3 SI7501DN-T1-GE3 Vishay Siliconix 72173.pdf Description: MOSFET N/P-CH 30V 5.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
SI7540DP-T1-GE3 SI7540DP-T1-GE3 Vishay Siliconix si7540dp.pdf Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7818DN-T1-GE3 SI7818DN-T1-GE3 Vishay Siliconix si7818dn.pdf Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 5709 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.8 EUR
10+ 3.1 EUR
100+ 2.41 EUR
500+ 2.05 EUR
1000+ 1.67 EUR
Mindestbestellmenge: 7
SI7820DN-T1-GE3 SI7820DN-T1-GE3 Vishay Siliconix si7820dn.pdf Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 11930 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
10+ 2.94 EUR
100+ 2.34 EUR
500+ 1.98 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 8
SI7842DP-T1-GE3 SI7842DP-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7844DP-T1-GE3 SI7844DP-T1-GE3 Vishay Siliconix 71328.pdf Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7858ADP-T1-GE3 SI7858ADP-T1-GE3 Vishay Siliconix 73164.pdf Description: MOSFET N-CH 12V 20A PPAK SO-8
auf Bestellung 2959 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.59 EUR
10+ 6.82 EUR
100+ 5.48 EUR
500+ 4.5 EUR
1000+ 3.86 EUR
Mindestbestellmenge: 4
SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 Vishay Siliconix si7892bd.pdf Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 1581 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.39 EUR
10+ 3.65 EUR
100+ 2.9 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix si7898dp.pdf Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 13972 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.17 EUR
10+ 4.28 EUR
100+ 3.4 EUR
500+ 2.88 EUR
1000+ 2.44 EUR
Mindestbestellmenge: 6
SI7922DN-T1-GE3 SI7922DN-T1-GE3 Vishay Siliconix 72031.pdf Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 42035 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.06 EUR
10+ 3.35 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
SI7942DP-T1-GE3 SI7942DP-T1-GE3 Vishay Siliconix 72118.pdf Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
auf Bestellung 4991 Stücke:
Lieferzeit 21-28 Tag (e)
SI7945DP-T1-GE3 SI7945DP-T1-GE3 Vishay Siliconix 72090.pdf Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix si7958dp.pdf Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SI7960DP-T1-GE3 SI7960DP-T1-GE3 Vishay Siliconix si7960dp.pdf Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SIA411DJ-T1-GE3 SIA411DJ-T1-GE3 Vishay Siliconix sia411dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-GE3 SIA914DJ-T1-GE3 Vishay Siliconix sia914dj.pdf Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB911DK-T1-GE3 SIB911DK-T1-GE3 Vishay Siliconix sib911dk.pdf Description: MOSFET 2P-CH 20V 2.6A SC75-6
Produkt ist nicht verfügbar
SI1065X-T1-GE3 SI1065X-T1-GE3 Vishay Siliconix si1065x.pdf Description: MOSFET P-CH 12V 1.18A SC89-6
Produkt ist nicht verfügbar
SI4378DY-T1-GE3 SI4378DY-T1-GE3 Vishay Siliconix si4378dy.pdf Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 6620 Stücke:
Lieferzeit 21-28 Tag (e)
SI5435BDC-T1-GE3 SI5435BDC-T1-GE3 Vishay Siliconix 73137.pdf Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
SI5447DC-T1-GE3 SI5447DC-T1-GE3 Vishay Siliconix 71256.pdf Description: MOSFET P-CH 20V 3.5A 1206-8
Produkt ist nicht verfügbar
SI6433BDQ-T1-GE3 SI6433BDQ-T1-GE3 Vishay Siliconix 72511.pdf Description: MOSFET P-CH 12V 4A 8-TSSOP
Produkt ist nicht verfügbar
SI6459BDQ-T1-GE3 SI6459BDQ-T1-GE3 Vishay Siliconix 72518.pdf Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3 Vishay Siliconix 72018.pdf Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6963BDQ-T1-GE3 SI6963BDQ-T1-GE3 Vishay Siliconix 72772.pdf Description: MOSFET 2P-CH 20V 3.4A 8-TSSOP
Produkt ist nicht verfügbar
SI7107DN-T1-GE3 SI7107DN-T1-GE3 Vishay Siliconix si7107dn.pdf Description: MOSFET P-CH 20V 9.8A 1212-8
Produkt ist nicht verfügbar
SI7114DN-T1-GE3 SI7114DN-T1-GE3 Vishay Siliconix si7114dn.pdf Description: MOSFET N-CH 30V 11.7A 1212-8
Produkt ist nicht verfügbar
SI7366DP-T1-GE3 SI7366DP-T1-GE3 Vishay Siliconix 72296.pdf Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7958DP-T1-GE3 SI7958DP-T1-GE3 Vishay Siliconix si7958dp.pdf Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SIA411DJ-T1-GE3 SIA411DJ-T1-GE3 Vishay Siliconix sia411dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-GE3 SIA914DJ-T1-GE3 Vishay Siliconix sia914dj.pdf Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SUB75P03-07-E3 SUB75P03-07-E3 Vishay Siliconix supsub75.pdf Description: MOSFET P-CH 30V 75A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
SIHP18N50C-E3 SIHP18N50C-E3 Vishay Siliconix sihp18n5.pdf Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 599 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.58 EUR
50+ 5.29 EUR
100+ 4.35 EUR
500+ 3.68 EUR
Mindestbestellmenge: 4
SIHG20N50C-E3 SIHG20N50C-E3 Vishay Siliconix sihg20n5.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 3177 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.02 EUR
25+ 5.55 EUR
100+ 4.76 EUR
500+ 4.23 EUR
1000+ 3.62 EUR
2000+ 3.41 EUR
Mindestbestellmenge: 4
SIHP22N60S-E3 SIHP22N60S-E3 Vishay Siliconix sihp22n60s.pdf Description: MOSFET N-CH 600V 22A TO220AB
Produkt ist nicht verfügbar
SIHG22N60S-E3 SIHG22N60S-E3 Vishay Siliconix sihg22n60s.pdf Description: MOSFET N-CH 600V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
Produkt ist nicht verfügbar
DG2522DN-T1-E4 DG2522DN-T1-E4 Vishay Siliconix dg2522.pdf Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 105MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 1.6V ~ 5.5V
Charge Injection: 27pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 75ns, 60ns
Channel Capacitance (CS(off), CD(off)): 51pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2706DN-T1-E4 DG2706DN-T1-E4 Vishay Siliconix dg2706.pdf Description: IC SWITCH QUAD SPDT 16-MINIQFN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DG2714DL-T1-E3 DG2714DL-T1-E3 Vishay Siliconix dg2714.pdf Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 9pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm (Max)
Switch Time (Ton, Toff) (Max): 51ns, 33ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2720DN-T1-E4 DG2720DN-T1-E4 Vishay Siliconix dg2720.pdf Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Produkt ist nicht verfügbar
DG2722DN-T1-E4 DG2722DN-T1-E4 Vishay Siliconix dg2722.pdf Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Produkt ist nicht verfügbar
DG2727DN-T1-E4 DG2727DN-T1-E4 Vishay Siliconix dg2727.pdf Description: IC SWTICH DUAL SPST 8-MINIQFN
Produkt ist nicht verfügbar
DG2735DN-T1-E4 DG2735DN-T1-E4 Vishay Siliconix dg2735.pdf Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
Produkt ist nicht verfügbar
DG2737DN-T1-E4 DG2737DN-T1-E4 Vishay Siliconix DG2737-39.pdf Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2738DN-T1-E4 DG2738DN-T1-E4 Vishay Siliconix DG2737-39.pdf Description: IC SW SPST-NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG2739DN-T1-E4 DG2739DN-T1-E4 Vishay Siliconix DG2737-39.pdf Description: IC SW SPST-NO/NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
SI7411DN-T1-GE3 72399.pdf
SI7411DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar
SI7414DN-T1-GE3 71738.pdf
SI7414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 11123 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 8
SI7415DN-T1-GE3 si7415dn.pdf
SI7415DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 29215 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.69 EUR
10+ 3.07 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.75 EUR
Mindestbestellmenge: 8
SI7430DP-T1-GE3 si7430dp.pdf
SI7430DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
auf Bestellung 6035 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 5.67 EUR
100+ 4.58 EUR
500+ 4.07 EUR
1000+ 3.49 EUR
Mindestbestellmenge: 4
SI7434DP-T1-GE3 si7434dp.pdf
SI7434DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 472 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.16 EUR
10+ 7.34 EUR
100+ 6.01 EUR
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SI7450DP-T1-GE3 si7450dp.pdf
SI7450DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 2854 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.6 EUR
10+ 5.49 EUR
100+ 4.37 EUR
500+ 3.69 EUR
1000+ 3.13 EUR
Mindestbestellmenge: 4
SI7456DP-T1-GE3 71603.pdf
SI7456DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
auf Bestellung 417 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.46 EUR
10+ 4.9 EUR
100+ 3.94 EUR
Mindestbestellmenge: 5
SI7459DP-T1-GE3 si7459dp.pdf
SI7459DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7461DP-T1-GE3 si7461dp.pdf
SI7461DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
auf Bestellung 42077 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.54 EUR
10+ 4.6 EUR
100+ 3.66 EUR
500+ 3.1 EUR
1000+ 2.63 EUR
Mindestbestellmenge: 5
SI7463DP-T1-GE3 si7463dp.pdf
SI7463DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
auf Bestellung 2292 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.64 EUR
10+ 6.87 EUR
100+ 5.52 EUR
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Mindestbestellmenge: 4
SI7465DP-T1-GE3 73113.pdf
SI7465DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 27927 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SI7483ADP-T1-GE3 73025.pdf
SI7483ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Produkt ist nicht verfügbar
SI7485DP-T1-GE3 72275.pdf
SI7485DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7489DP-T1-GE3 si7489dp.pdf
SI7489DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 10694 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.06 EUR
10+ 5.03 EUR
100+ 4.01 EUR
500+ 3.39 EUR
1000+ 2.88 EUR
Mindestbestellmenge: 5
SI7501DN-T1-GE3 72173.pdf
SI7501DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
SI7540DP-T1-GE3 si7540dp.pdf
SI7540DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7818DN-T1-GE3 si7818dn.pdf
SI7818DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 5709 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.8 EUR
10+ 3.1 EUR
100+ 2.41 EUR
500+ 2.05 EUR
1000+ 1.67 EUR
Mindestbestellmenge: 7
SI7820DN-T1-GE3 si7820dn.pdf
SI7820DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 11930 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
10+ 2.94 EUR
100+ 2.34 EUR
500+ 1.98 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 8
SI7842DP-T1-GE3
SI7842DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7844DP-T1-GE3 71328.pdf
SI7844DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7858ADP-T1-GE3 73164.pdf
SI7858ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8
auf Bestellung 2959 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.59 EUR
10+ 6.82 EUR
100+ 5.48 EUR
500+ 4.5 EUR
1000+ 3.86 EUR
Mindestbestellmenge: 4
SI7892BDP-T1-GE3 si7892bd.pdf
SI7892BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 1581 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.39 EUR
10+ 3.65 EUR
100+ 2.9 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
SI7898DP-T1-GE3 si7898dp.pdf
SI7898DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 13972 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.17 EUR
10+ 4.28 EUR
100+ 3.4 EUR
500+ 2.88 EUR
1000+ 2.44 EUR
Mindestbestellmenge: 6
SI7922DN-T1-GE3 72031.pdf
SI7922DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 42035 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.06 EUR
10+ 3.35 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
SI7942DP-T1-GE3 72118.pdf
SI7942DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
auf Bestellung 4991 Stücke:
Lieferzeit 21-28 Tag (e)
SI7945DP-T1-GE3 72090.pdf
SI7945DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
SI7958DP-T1-GE3 si7958dp.pdf
SI7958DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SI7960DP-T1-GE3 si7960dp.pdf
SI7960DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SIA411DJ-T1-GE3 sia411dj.pdf
SIA411DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-GE3 sia914dj.pdf
SIA914DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB911DK-T1-GE3 sib911dk.pdf
SIB911DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Produkt ist nicht verfügbar
SI1065X-T1-GE3 si1065x.pdf
SI1065X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SC89-6
Produkt ist nicht verfügbar
SI4378DY-T1-GE3 si4378dy.pdf
SI4378DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 6620 Stücke:
Lieferzeit 21-28 Tag (e)
SI5435BDC-T1-GE3 73137.pdf
SI5435BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
SI5447DC-T1-GE3 71256.pdf
SI5447DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.5A 1206-8
Produkt ist nicht verfügbar
SI6433BDQ-T1-GE3 72511.pdf
SI6433BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Produkt ist nicht verfügbar
SI6459BDQ-T1-GE3 72518.pdf
SI6459BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6463BDQ-T1-GE3 72018.pdf
SI6463BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6963BDQ-T1-GE3 72772.pdf
SI6963BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8-TSSOP
Produkt ist nicht verfügbar
SI7107DN-T1-GE3 si7107dn.pdf
SI7107DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
Produkt ist nicht verfügbar
SI7114DN-T1-GE3 si7114dn.pdf
SI7114DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8
Produkt ist nicht verfügbar
SI7366DP-T1-GE3 72296.pdf
SI7366DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7958DP-T1-GE3 si7958dp.pdf
SI7958DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SIA411DJ-T1-GE3 sia411dj.pdf
SIA411DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-GE3 sia914dj.pdf
SIA914DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SUB75P03-07-E3 supsub75.pdf
SUB75P03-07-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
SIHP18N50C-E3 sihp18n5.pdf
SIHP18N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 599 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.58 EUR
50+ 5.29 EUR
100+ 4.35 EUR
500+ 3.68 EUR
Mindestbestellmenge: 4
SIHG20N50C-E3 sihg20n5.pdf
SIHG20N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 3177 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.02 EUR
25+ 5.55 EUR
100+ 4.76 EUR
500+ 4.23 EUR
1000+ 3.62 EUR
2000+ 3.41 EUR
Mindestbestellmenge: 4
SIHP22N60S-E3 sihp22n60s.pdf
SIHP22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO220AB
Produkt ist nicht verfügbar
SIHG22N60S-E3 sihg22n60s.pdf
SIHG22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
Produkt ist nicht verfügbar
DG2522DN-T1-E4 dg2522.pdf
DG2522DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 105MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 1.6V ~ 5.5V
Charge Injection: 27pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 75ns, 60ns
Channel Capacitance (CS(off), CD(off)): 51pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2706DN-T1-E4 dg2706.pdf
DG2706DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 16-MINIQFN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DG2714DL-T1-E3 dg2714.pdf
DG2714DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 9pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm (Max)
Switch Time (Ton, Toff) (Max): 51ns, 33ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2720DN-T1-E4 dg2720.pdf
DG2720DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Produkt ist nicht verfügbar
DG2722DN-T1-E4 dg2722.pdf
DG2722DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Produkt ist nicht verfügbar
DG2727DN-T1-E4 dg2727.pdf
DG2727DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWTICH DUAL SPST 8-MINIQFN
Produkt ist nicht verfügbar
DG2735DN-T1-E4 dg2735.pdf
DG2735DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
Produkt ist nicht verfügbar
DG2737DN-T1-E4 DG2737-39.pdf
DG2737DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2738DN-T1-E4 DG2737-39.pdf
DG2738DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG2739DN-T1-E4 DG2737-39.pdf
DG2739DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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