Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SI8821EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 4MICROFOOT Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1.3V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N7002-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 60V 115MA TO236 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2367DS-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A SOT-23 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 |
auf Bestellung 7620 Stücke Lieferzeit 21-28 Tag (e) |
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SIA462DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A SC-70-6L Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 30V 12A SC-70-6L Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 1595 Stücke Lieferzeit 21-28 Tag (e) |
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SI1414DH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 4A SOT-363 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4216 Stücke - Preis und Lieferfrist anzeigen
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SI3417DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI3417 Manufacturer: Vishay Siliconix Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11397 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Base Part Number: SI3417 Manufacturer: Vishay Siliconix Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 6261 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11397 Stücke - Preis und Lieferfrist anzeigen
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SI8816EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOT Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOT Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
auf Bestellung 23 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V MICRO FOOT Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 500mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V Base Part Number: SI8816 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Package / Case: 4-XFBGA Supplier Device Package: 4-Microfoot Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 10688 Stücke Lieferzeit 21-28 Tag (e) |
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SI1443EDH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 4A SOT-363 Base Part Number: SI1443 Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4504 Stücke - Preis und Lieferfrist anzeigen
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SI3424CDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8A 6TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11956 Stücke - Preis und Lieferfrist anzeigen
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SI8812DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICROFOOT Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): ±5V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA Base Part Number: SI8812 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICROFOOT Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): ±5V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA Base Part Number: SI8812 |
auf Bestellung 60 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V MICROFOOT FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 20V Rds On (Max) @ Id, Vgs: 59 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Supplier Device Package: 4-Microfoot |
auf Bestellung 2547 Stücke Lieferzeit 21-28 Tag (e) |
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SI2392DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 3.1A SOT-23 Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.5W Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI3474DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 6TSOP Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V Power Dissipation (Max): 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3474 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6106 Stücke - Preis und Lieferfrist anzeigen
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SI8808DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 4MICROFOOT Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI8489EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 4MICROFOOT Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET P-CH 20V MICROFOOT Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 780mW Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V |
auf Bestellung 8605 Stücke Lieferzeit 21-28 Tag (e) |
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SIB441EDK-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 9A PPAK SC75-6 Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6 Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® SC-75-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 4A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI8806DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 4MICROFOOT Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): ±8V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA Base Part Number: SI8806 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2366DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 5.8A SOT23-3 Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V Vgs (Max): ±20V Base Part Number: SI2366 Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9812 Stücke - Preis und Lieferfrist anzeigen
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SIRA34DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31.25W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4622 Stücke - Preis und Lieferfrist anzeigen
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SI8805EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V MICROFOOT Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 17960 Stücke - Preis und Lieferfrist anzeigen
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| SI8809EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 1.9A MICROFOOT Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA Mounting Type: Surface Mount FET Type: MOSFET P-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SI1303DL-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 670MA SC70-3 Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 290mW (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 670mA (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120018 Stücke - Preis und Lieferfrist anzeigen
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SIA440DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 12A PPAK SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 40V 12A SC-70 Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Drain to Source Voltage (Vdss): 40V FET Type: N-Channel Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 8380 Stücke Lieferzeit 21-28 Tag (e) |
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SIA459EDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 9A SC70 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET P-CH 20V 9A SC70 Supplier Device Package: PowerPAK® SC-70-6 Single Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 15.6W Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V |
auf Bestellung 5473 Stücke Lieferzeit 21-28 Tag (e) |
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SI1400DL-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 1.6A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 568mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 1.6A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) FET Type: MOSFET N-Channel, Metal Oxide Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 568mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 20V |
auf Bestellung 6432 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 1.6A SC70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 568mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) |
auf Bestellung 6432 Stücke Lieferzeit 21-28 Tag (e) |
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SI1305DL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH G-S 8V SC-70-3 Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Power - Max: 290mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drain to Source Voltage (Vdss): 8V FET Feature: Logic Level Gate FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SI1307EDL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 0.85A SC-70-3 Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 290mW (Ta) Vgs (Max): ±8V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1072X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V SC89 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI1031X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 0.155A SC-75A Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 155mA (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-75A Package / Case: SC-75A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1303DL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 670MA SC70-3 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs (Max): ±12V Power Dissipation (Max): 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2301BDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.2A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2812 Stücke - Preis und Lieferfrist anzeigen
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SI2303BDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 1.49A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2303CDS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 2.7A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99126 Stücke - Preis und Lieferfrist anzeigen
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SI3407DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI3407 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3221 Stücke - Preis und Lieferfrist anzeigen
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SI3433CDV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 6TSOP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 34171 Stücke - Preis und Lieferfrist anzeigen
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SI8466EDB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 700mV @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 8V 3.6A MICROFOOT FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 8V Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V Power - Max: 780mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-Microfoot |
auf Bestellung 5572 Stücke Lieferzeit 21-28 Tag (e) |
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SIA817EDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6 Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1.3V @ 250µA FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 29679 Stücke - Preis und Lieferfrist anzeigen
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SIB410DK-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 8SO Packaging: Tape & Reel (TR) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Power Dissipation (Max): 2.5W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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SI2342DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 6A SOT-23 Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI2342 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V Vgs (Max): ±5V Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 28866 Stücke - Preis und Lieferfrist anzeigen
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SI2399DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2155 Stücke - Preis und Lieferfrist anzeigen
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SI8469DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 3.6A MICRO Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 780mW Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIA447DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 12A PPAK SC70-6 Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 19W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5712 Stücke - Preis und Lieferfrist anzeigen
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SIA477EDJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 12A SC-70-6L Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1789 Stücke - Preis und Lieferfrist anzeigen
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TP0101K-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH D-S 20V TO236 FET Feature: Logic Level Gate Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount FET Type: MOSFET P-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 50µA Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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SI5855CDC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A 1206-8 Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.8W Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A 1206-8 Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.8W Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA |
auf Bestellung 7309 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A 1206-8 Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.8W Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V |
auf Bestellung 7309 Stücke Lieferzeit 21-28 Tag (e) |
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SI1441EDH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 4A SOT-363 Supplier Device Package: SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.8W (Tc) Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI1441 Package / Case: 6-TSSOP, SC-88, SOT-363 |
auf Bestellung 1939 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1939 Stücke - Preis und Lieferfrist anzeigen
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SI3467DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 6-TSOP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.14W Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI3851DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 1.6A 6-TSOP Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 30V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 83998 Stücke - Preis und Lieferfrist anzeigen
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SI2343DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6764 Stücke - Preis und Lieferfrist anzeigen
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SI3467DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.14W Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI1067X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 1.06A SC89-6 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V Vgs(th) (Max) @ Id: 950mV @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2309CDS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SIB457EDK-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 9A PPAK SC75-6L Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13W Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5411 Stücke - Preis und Lieferfrist anzeigen
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SQ1470EH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 2.8A SC70 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Power - Max: 3.3W Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI3476DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 4.6A 6TSOP Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI3476 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 19748 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 80V 4.6A 6TSOP Base Part Number: SI3476 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 4976 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 19748 Stücke - Preis und Lieferfrist anzeigen
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SQ2348ES-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8A TO236 Base Part Number: SQ2348 Manufacturer: Vishay Siliconix Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7555 Stücke - Preis und Lieferfrist anzeigen
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SI8472DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICRO FOOT Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 4-MICRO FOOT® (1x1) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 780mW (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8210 Stücke - Preis und Lieferfrist anzeigen
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| SIB437EDKT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 9A SC-75-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±5V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® TSC75-6 Package / Case: PowerPAK® TSC-75-6 Base Part Number: SIB437 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| SI8821EDB-T2-E1 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
| 2N7002-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 115MA TO236
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
| SI2367DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 7620 Stücke - Preis und Lieferfrist anzeigen
| SI2367DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 7620 Stücke Description: MOSFET P-CH 20V 3.8A SOT-23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Lieferzeit 21-28 Tag (e)
| SIA462DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1595 Stücke - Preis und Lieferfrist anzeigen
| SIA462DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke Description: MOSFET N-CH 30V 12A SC-70-6L
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SI1414DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A SOT-363
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4A SOT-363
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
auf Bestellung 4216 Stücke - Preis und Lieferfrist anzeigen
| SI3417DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
auf Bestellung 3000 Stücke Description: MOSFET P-CH 30V 8A 6TSOP
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 17658 Stücke - Preis und Lieferfrist anzeigen
| SI3417DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6261 Stücke Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3417
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 14397 Stücke - Preis und Lieferfrist anzeigen
| SI8816EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4MICROFOOT
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 10711 Stücke - Preis und Lieferfrist anzeigen
| SI8816EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
auf Bestellung 23 Stücke Description: MOSFET N-CH 30V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 10688 Stücke - Preis und Lieferfrist anzeigen
| SI8816EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V MICRO FOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Base Part Number: SI8816
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Package / Case: 4-XFBGA
Supplier Device Package: 4-Microfoot
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 10688 Stücke Description: MOSFET N-CH 30V MICRO FOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Base Part Number: SI8816
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Package / Case: 4-XFBGA
Supplier Device Package: 4-Microfoot
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 23 Stücke - Preis und Lieferfrist anzeigen
| SI1443EDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A SOT-363
Base Part Number: SI1443
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke Description: MOSFET P-CH 30V 4A SOT-363
Base Part Number: SI1443
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 4504 Stücke - Preis und Lieferfrist anzeigen
| SI3424CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11956 Stücke - Preis und Lieferfrist anzeigen
| SI8812DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
auf Bestellung 2607 Stücke - Preis und Lieferfrist anzeigen
| SI8812DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
auf Bestellung 60 Stücke Description: MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±5V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Part Number: SI8812
Lieferzeit 21-28 Tag (e)
auf Bestellung 2547 Stücke - Preis und Lieferfrist anzeigen
| SI8812DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 59 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Supplier Device Package: 4-Microfoot
auf Bestellung 2547 Stücke Description: MOSFET N-CH 20V MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 59 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Supplier Device Package: 4-Microfoot
Lieferzeit 21-28 Tag (e)
auf Bestellung 60 Stücke - Preis und Lieferfrist anzeigen
| SI2392DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT-23
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.1A SOT-23
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
| SI3474DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3474
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.8A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3474
auf Bestellung 6106 Stücke - Preis und Lieferfrist anzeigen
| SI8808DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4MICROFOOT
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
| SI8489EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4MICROFOOT
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
auf Bestellung 8605 Stücke - Preis und Lieferfrist anzeigen
| SI8489EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V
auf Bestellung 8605 Stücke Description: MOSFET P-CH 20V MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V
Lieferzeit 21-28 Tag (e)
| SIB441EDK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A PPAK SC75-6
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-75-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 9A PPAK SC75-6
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-75-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 4A, 4.5V
| SI8806DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Part Number: SI8806
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Part Number: SI8806
| SI2366DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
Vgs (Max): ±20V
Base Part Number: SI2366
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 5.8A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V
Vgs (Max): ±20V
Base Part Number: SI2366
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 9812 Stücke - Preis und Lieferfrist anzeigen
| SIRA34DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31.25W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
auf Bestellung 4622 Stücke - Preis und Lieferfrist anzeigen
| SI8805EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
auf Bestellung 6000 Stücke Description: MOSFET P-CH 8V MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Lieferzeit 21-28 Tag (e)
auf Bestellung 17960 Stücke - Preis und Lieferfrist anzeigen
| SI8809EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.9A MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 1.9A MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
| SI1303DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 670MA SC70-3
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 120018 Stücke - Preis und Lieferfrist anzeigen
| SIA440DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
auf Bestellung 8380 Stücke - Preis und Lieferfrist anzeigen
| SIA440DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A SC-70
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8380 Stücke Description: MOSFET N-CH 40V 12A SC-70
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| SIA459EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9A SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
auf Bestellung 5473 Stücke - Preis und Lieferfrist anzeigen
| SIA459EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70
Supplier Device Package: PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 15.6W
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
auf Bestellung 5473 Stücke Description: MOSFET P-CH 20V 9A SC70
Supplier Device Package: PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 15.6W
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Lieferzeit 21-28 Tag (e)
| SI1400DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 12864 Stücke - Preis und Lieferfrist anzeigen
| SI1400DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 6432 Stücke Description: MOSFET N-CH 20V 1.6A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 12432 Stücke - Preis und Lieferfrist anzeigen
| SI1400DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 6432 Stücke Description: MOSFET N-CH 20V 1.6A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Lieferzeit 21-28 Tag (e)
auf Bestellung 12432 Stücke - Preis und Lieferfrist anzeigen
| SI1305DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH G-S 8V SC-70-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 3000 Stücke Description: MOSFET P-CH G-S 8V SC-70-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| SI1307EDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SC-70-3
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 0.85A SC-70-3
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±8V
| SI1072X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI1031X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.155A SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-75A
Package / Case: SC-75A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 0.155A SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-75A
Package / Case: SC-75A
| SI1303DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs (Max): ±12V
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs (Max): ±12V
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
| SI2301BDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 2812 Stücke - Preis und Lieferfrist anzeigen
| SI2303BDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
| SI2303CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 99126 Stücke - Preis und Lieferfrist anzeigen
| SI3407DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 8A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3407
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
auf Bestellung 3221 Stücke - Preis und Lieferfrist anzeigen
| SI3433CDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
auf Bestellung 34171 Stücke - Preis und Lieferfrist anzeigen
| SI8466EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 700mV @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 8V 4MICROFOOT
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 700mV @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 5572 Stücke - Preis und Lieferfrist anzeigen
| SI8466EDB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 3.6A MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-Microfoot
auf Bestellung 5572 Stücke Description: MOSFET N-CH 8V 3.6A MICROFOOT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-Microfoot
Lieferzeit 21-28 Tag (e)
| SIA817EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 4.5A PPAK SC70-6
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
auf Bestellung 29679 Stücke - Preis und Lieferfrist anzeigen
| SIB410DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
| SI2342DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 6A SOT-23
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2342
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
auf Bestellung 12000 Stücke Description: MOSFET N-CH 8V 6A SOT-23
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2342
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 28866 Stücke - Preis und Lieferfrist anzeigen
| SI2399DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
auf Bestellung 2155 Stücke - Preis und Lieferfrist anzeigen
| SI8469DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3.6A MICRO
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 3.6A MICRO
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
| SIA447DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 12A PPAK SC70-6
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
auf Bestellung 5712 Stücke - Preis und Lieferfrist anzeigen
| SIA477EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC-70-6L
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 12A SC-70-6L
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 1789 Stücke - Preis und Lieferfrist anzeigen
| TP0101K-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V TO236
FET Feature: Logic Level Gate
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH D-S 20V TO236
FET Feature: Logic Level Gate
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
| SI5855CDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
auf Bestellung 6000 Stücke Description: MOSFET P-CH 20V 3.7A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 14618 Stücke - Preis und Lieferfrist anzeigen
| SI5855CDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 7309 Stücke Description: MOSFET P-CH 20V 3.7A 1206-8
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 13309 Stücke - Preis und Lieferfrist anzeigen
| SI5855CDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
auf Bestellung 7309 Stücke Description: MOSFET P-CH 20V 3.7A 1206-8
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 13309 Stücke - Preis und Lieferfrist anzeigen
| SI1441EDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1441
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 1939 Stücke Description: MOSFET P-CH 20V 4A SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1441
Package / Case: 6-TSSOP, SC-88, SOT-363
Lieferzeit 21-28 Tag (e)
auf Bestellung 1939 Stücke - Preis und Lieferfrist anzeigen
| SI3467DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.8A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
| SI3851DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.6A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 1.6A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
auf Bestellung 83998 Stücke - Preis und Lieferfrist anzeigen
| SI2343DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
auf Bestellung 6764 Stücke - Preis und Lieferfrist anzeigen
| SI3467DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI1067X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.06A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 1.06A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 1.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SIB457EDK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9A PPAK SC75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
auf Bestellung 5411 Stücke - Preis und Lieferfrist anzeigen
| SQ1470EH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 2.8A SC70
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
| SI3476DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 4.6A 6TSOP
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 80V 4.6A 6TSOP
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 24724 Stücke - Preis und Lieferfrist anzeigen
| SI3476DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 4.6A 6TSOP
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4976 Stücke Description: MOSFET N-CH 80V 4.6A 6TSOP
Base Part Number: SI3476
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 22748 Stücke - Preis und Lieferfrist anzeigen
| SQ2348ES-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A TO236
Base Part Number: SQ2348
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30V 8A TO236
Base Part Number: SQ2348
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7555 Stücke - Preis und Lieferfrist anzeigen
| SI8472DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 4MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 8210 Stücke - Preis und Lieferfrist anzeigen
| SIB437EDKT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC-75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® TSC75-6
Package / Case: PowerPAK® TSC-75-6
Base Part Number: SIB437
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 9A SC-75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® TSC75-6
Package / Case: PowerPAK® TSC-75-6
Base Part Number: SIB437
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