Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11840) > Seite 152 nach 198

Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 57 76 95 114 133 147 148 149 150 151 152 153 154 155 156 157 171 190 198  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DG1409EEN-T1-GE4 DG1409EEN-T1-GE4 Vishay Siliconix dg1408e.pdf Description: IC MUX DUAL 4:1 4.2OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.2Ohm
-3db Bandwidth: 90MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 103pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: DP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 270mOhm
Switch Time (Ton, Toff) (Max): 130ns, 105ns
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1124 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.04 EUR
10+13.59 EUR
25+12.96 EUR
100+11.25 EUR
250+10.75 EUR
500+9.79 EUR
1000+8.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ174EP-T1_GE3 SQJ174EP-T1_GE3 Vishay Siliconix sqj174ep.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ174EP-T1_GE3 SQJ174EP-T1_GE3 Vishay Siliconix sqj174ep.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.58 EUR
10+3.06 EUR
100+2.13 EUR
500+1.71 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHA21N80AE-GE3 SIHA21N80AE-GE3 Vishay Siliconix doc?92342 Description: MOSFET N-CH 800V 7.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1001 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.65 EUR
10+4.7 EUR
100+3.74 EUR
500+3.17 EUR
1000+2.69 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHK045N60E-T1-GE3 SIHK045N60E-T1-GE3 Vishay Siliconix sihk045n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHK045N60E-T1-GE3 SIHK045N60E-T1-GE3 Vishay Siliconix sihk045n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
auf Bestellung 1641 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.9 EUR
10+13.52 EUR
100+11.23 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1926DL-T1-GE3 SI1926DL-T1-GE3 Vishay Siliconix si1926dl.pdf Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1926DL-T1-GE3 SI1926DL-T1-GE3 Vishay Siliconix si1926dl.pdf Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
33+0.64 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIS782DN-T1-GE3 SIS782DN-T1-GE3 Vishay Siliconix sis782dn.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.48 EUR
6000+0.44 EUR
9000+0.42 EUR
15000+0.4 EUR
21000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIS782DN-T1-GE3 SIS782DN-T1-GE3 Vishay Siliconix sis782dn.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
auf Bestellung 22849 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD40020E_GE3 SQD40020E_GE3 Vishay Siliconix sqd40020e.pdf Description: MOSFET N-CH 40V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD40020E_GE3 SQD40020E_GE3 Vishay Siliconix sqd40020e.pdf Description: MOSFET N-CH 40V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ460AEP-T1_GE3 SQJ460AEP-T1_GE3 Vishay Siliconix sqj460ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ460AEP-T1_GE3 SQJ460AEP-T1_GE3 Vishay Siliconix sqj460ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
10+2.37 EUR
100+1.61 EUR
500+1.27 EUR
1000+1.2 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419AEEV-T1_GE3 SQ3419AEEV-T1_GE3 Vishay Siliconix sq3419aeev.pdf Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419AEEV-T1_GE3 SQ3419AEEV-T1_GE3 Vishay Siliconix sq3419aeev.pdf Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4243 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.96 EUR
17+1.27 EUR
100+0.86 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EV-T1_BE3 SQ3419EV-T1_BE3 Vishay Siliconix sq3419ev.pdf Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.48 EUR
6000+0.45 EUR
9000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EV-T1_BE3 SQ3419EV-T1_BE3 Vishay Siliconix sq3419ev.pdf Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9835 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
20+1.09 EUR
100+0.76 EUR
500+0.63 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4953ADY-T1-E3 SI4953ADY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 30V 3.7A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4953ADY-T1-GE3 SI4953ADY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 30V 3.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ4284EY-T1_GE3 SQ4284EY-T1_GE3 Vishay Siliconix sq4284ey.pdf Description: MOSFET 2N-CH 40V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W
Drain to Source Voltage (Vdss): 40V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.2 EUR
5000+1.15 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ4284EY-T1_GE3 SQ4284EY-T1_GE3 Vishay Siliconix sq4284ey.pdf Description: MOSFET 2N-CH 40V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W
Drain to Source Voltage (Vdss): 40V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21400 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+2.67 EUR
100+1.81 EUR
500+1.45 EUR
1000+1.42 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD50034E_GE3 SQD50034E_GE3 Vishay Siliconix sqd50034e.pdf Description: MOSFET N-CH 60V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.29 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD50034E_GE3 SQD50034E_GE3 Vishay Siliconix sqd50034e.pdf Description: MOSFET N-CH 60V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3301 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.08 EUR
10+2.53 EUR
100+1.96 EUR
500+1.67 EUR
1000+1.36 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD50P08-28-T4_GE3 Vishay Siliconix sqd50p08.pdf Description: MOSFET P-CH 80V 48A TO252AA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHB055N60EF-GE3 SIHB055N60EF-GE3 Vishay Siliconix sihb055n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3707 pF @ 100 V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.51 EUR
50+7.29 EUR
100+6.7 EUR
500+5.7 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQS486CENW-T1_GE3 SQS486CENW-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQS486CENW-T1_GE3 SQS486CENW-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17918 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
13+1.69 EUR
100+1.14 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJQ141EL-T1_GE3 SQJQ141EL-T1_GE3 Vishay Siliconix sqjq141el.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJQ141EL-T1_GE3 SQJQ141EL-T1_GE3 Vishay Siliconix sqjq141el.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1102 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.79 EUR
10+5.81 EUR
100+4.11 EUR
500+3.38 EUR
1000+3.14 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD70140EL_GE3 SQD70140EL_GE3 Vishay Siliconix sqd70140el.pdf Description: MOSFET N-CH 100V 30A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.89 EUR
4000+0.83 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD70140EL_GE3 SQD70140EL_GE3 Vishay Siliconix sqd70140el.pdf Description: MOSFET N-CH 100V 30A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4608 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.17 EUR
11+2.01 EUR
100+1.34 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7469ADP-T1-RE3 SI7469ADP-T1-RE3 Vishay Siliconix si7469adp.pdf Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC642ACD-T1-GE3 SIC642ACD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 50A PPAK
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC642ACD-T1-GE3 SIC642ACD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 50A PPAK
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.01 EUR
10+5.85 EUR
25+5.02 EUR
100+4.09 EUR
250+3.63 EUR
500+3.34 EUR
1000+3.11 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC654CD-T1-GE3 SIC654CD-T1-GE3 Vishay Siliconix sic654.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC654CD-T1-GE3 SIC654CD-T1-GE3 Vishay Siliconix sic654.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Part Status: Active
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.46 EUR
10+3.31 EUR
25+3.01 EUR
100+2.69 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR5102DP-T1-RE3 SIR5102DP-T1-RE3 Vishay Siliconix sir5102dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR5102DP-T1-RE3 SIR5102DP-T1-RE3 Vishay Siliconix sir5102dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 3898 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
10+5.34 EUR
100+3.76 EUR
500+3.19 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SUP70042E-GE3 SUP70042E-GE3 Vishay Siliconix sup70042e.pdf Description: N-CHANNEL 100 V (D-S) MOSFET TO-
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR512DP-T1-RE3 SIR512DP-T1-RE3 Vishay Siliconix sir512dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.82 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR512DP-T1-RE3 SIR512DP-T1-RE3 Vishay Siliconix sir512dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 5666 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.03 EUR
10+3.92 EUR
100+2.71 EUR
500+2.2 EUR
1000+2.13 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR516DP-T1-RE3 SIR516DP-T1-RE3 Vishay Siliconix sir516dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR516DP-T1-RE3 SIR516DP-T1-RE3 Vishay Siliconix sir516dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 4686 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.47 EUR
100+2.39 EUR
500+1.93 EUR
1000+1.81 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR514DP-T1-RE3 SIR514DP-T1-RE3 Vishay Siliconix sir514dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR514DP-T1-RE3 SIR514DP-T1-RE3 Vishay Siliconix sir514dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.71 EUR
10+3.7 EUR
100+2.55 EUR
500+2.06 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiRA72DP-T1-GE3 SiRA72DP-T1-GE3 Vishay Siliconix sira72dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiRA72DP-T1-GE3 SiRA72DP-T1-GE3 Vishay Siliconix sira72dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIHP6N65E-GE3 SIHP6N65E-GE3 Vishay Siliconix sihp6n65e.pdf Description: MOSFET N-CH 650V 7A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4602LDP-T1-RE3 SIR4602LDP-T1-RE3 Vishay Siliconix sir4602ldp.pdf Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.74 EUR
6000+0.69 EUR
9000+0.67 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4602LDP-T1-RE3 SIR4602LDP-T1-RE3 Vishay Siliconix sir4602ldp.pdf Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR4606DP-T1-GE3 SIR4606DP-T1-GE3 Vishay Siliconix sir4606dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.94 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4606DP-T1-GE3 SIR4606DP-T1-GE3 Vishay Siliconix sir4606dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG21N80AEF-GE3 SIHG21N80AEF-GE3 Vishay Siliconix sihg21n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.3 EUR
10+3.59 EUR
100+2.9 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DG417LEDY-T1-GE3 DG417LEDY-T1-GE3 Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Part Status: Active
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHK075N60E-T1-GE3 SIHK075N60E-T1-GE3 Vishay Siliconix sihk075n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHK075N60E-T1-GE3 SIHK075N60E-T1-GE3 Vishay Siliconix sihk075n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.1 EUR
10+10.26 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiSS71DN-T1-GE3 SiSS71DN-T1-GE3 Vishay Siliconix siss71dn.pdf Description: MOSFET P-CH 100V 23A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiSS71DN-T1-GE3 SiSS71DN-T1-GE3 Vishay Siliconix siss71dn.pdf Description: MOSFET P-CH 100V 23A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 50 V
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.14 EUR
11+1.99 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.95 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Si3424BDV-T1-GE3 Si3424BDV-T1-GE3 Vishay Siliconix si3424bd.pdf Description: MOSFET N-CH 30V 8A 6TSOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DG1409EEN-T1-GE4 dg1408e.pdf
DG1409EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 4:1 4.2OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.2Ohm
-3db Bandwidth: 90MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 103pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: DP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 270mOhm
Switch Time (Ton, Toff) (Max): 130ns, 105ns
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.04 EUR
10+13.59 EUR
25+12.96 EUR
100+11.25 EUR
250+10.75 EUR
500+9.79 EUR
1000+8.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ174EP-T1_GE3 sqj174ep.pdf
SQJ174EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ174EP-T1_GE3 sqj174ep.pdf
SQJ174EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.58 EUR
10+3.06 EUR
100+2.13 EUR
500+1.71 EUR
1000+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHA21N80AE-GE3 doc?92342
SIHA21N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1001 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.65 EUR
10+4.7 EUR
100+3.74 EUR
500+3.17 EUR
1000+2.69 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHK045N60E-T1-GE3 sihk045n60e.pdf
SIHK045N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHK045N60E-T1-GE3 sihk045n60e.pdf
SIHK045N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
auf Bestellung 1641 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.9 EUR
10+13.52 EUR
100+11.23 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1926DL-T1-GE3 si1926dl.pdf
SI1926DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1926DL-T1-GE3 si1926dl.pdf
SI1926DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
33+0.64 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIS782DN-T1-GE3 sis782dn.pdf
SIS782DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.48 EUR
6000+0.44 EUR
9000+0.42 EUR
15000+0.4 EUR
21000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIS782DN-T1-GE3 sis782dn.pdf
SIS782DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
auf Bestellung 22849 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD40020E_GE3 sqd40020e.pdf
SQD40020E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD40020E_GE3 sqd40020e.pdf
SQD40020E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ460AEP-T1_GE3 sqj460ep.pdf
SQJ460AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ460AEP-T1_GE3 sqj460ep.pdf
SQJ460AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4795 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
10+2.37 EUR
100+1.61 EUR
500+1.27 EUR
1000+1.2 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419AEEV-T1_GE3 sq3419aeev.pdf
SQ3419AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.52 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419AEEV-T1_GE3 sq3419aeev.pdf
SQ3419AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4243 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
17+1.27 EUR
100+0.86 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EV-T1_BE3 sq3419ev.pdf
SQ3419EV-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.48 EUR
6000+0.45 EUR
9000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EV-T1_BE3 sq3419ev.pdf
SQ3419EV-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9835 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
20+1.09 EUR
100+0.76 EUR
500+0.63 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4953ADY-T1-E3
SI4953ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.7A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4953ADY-T1-GE3
SI4953ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ4284EY-T1_GE3 sq4284ey.pdf
SQ4284EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W
Drain to Source Voltage (Vdss): 40V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.2 EUR
5000+1.15 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ4284EY-T1_GE3 sq4284ey.pdf
SQ4284EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W
Drain to Source Voltage (Vdss): 40V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+2.67 EUR
100+1.81 EUR
500+1.45 EUR
1000+1.42 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD50034E_GE3 sqd50034e.pdf
SQD50034E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.29 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD50034E_GE3 sqd50034e.pdf
SQD50034E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
10+2.53 EUR
100+1.96 EUR
500+1.67 EUR
1000+1.36 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD50P08-28-T4_GE3 sqd50p08.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 48A TO252AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHB055N60EF-GE3 sihb055n60ef.pdf
SIHB055N60EF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3707 pF @ 100 V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.51 EUR
50+7.29 EUR
100+6.7 EUR
500+5.7 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQS486CENW-T1_GE3
SQS486CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQS486CENW-T1_GE3
SQS486CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17918 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
13+1.69 EUR
100+1.14 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJQ141EL-T1_GE3 sqjq141el.pdf
SQJQ141EL-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJQ141EL-T1_GE3 sqjq141el.pdf
SQJQ141EL-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.79 EUR
10+5.81 EUR
100+4.11 EUR
500+3.38 EUR
1000+3.14 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD70140EL_GE3 sqd70140el.pdf
SQD70140EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.89 EUR
4000+0.83 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQD70140EL_GE3 sqd70140el.pdf
SQD70140EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4608 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.17 EUR
11+2.01 EUR
100+1.34 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7469ADP-T1-RE3 si7469adp.pdf
SI7469ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC642ACD-T1-GE3
SIC642ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC642ACD-T1-GE3
SIC642ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 16V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
10+5.85 EUR
25+5.02 EUR
100+4.09 EUR
250+3.63 EUR
500+3.34 EUR
1000+3.11 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC654CD-T1-GE3 sic654.pdf
SIC654CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIC654CD-T1-GE3 sic654.pdf
SIC654CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Part Status: Active
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.46 EUR
10+3.31 EUR
25+3.01 EUR
100+2.69 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR5102DP-T1-RE3 sir5102dp.pdf
SIR5102DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR5102DP-T1-RE3 sir5102dp.pdf
SIR5102DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 3898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.13 EUR
10+5.34 EUR
100+3.76 EUR
500+3.19 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SUP70042E-GE3 sup70042e.pdf
SUP70042E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET TO-
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR512DP-T1-RE3 sir512dp.pdf
SIR512DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.82 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR512DP-T1-RE3 sir512dp.pdf
SIR512DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 5666 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.03 EUR
10+3.92 EUR
100+2.71 EUR
500+2.2 EUR
1000+2.13 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR516DP-T1-RE3 sir516dp.pdf
SIR516DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR516DP-T1-RE3 sir516dp.pdf
SIR516DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 4686 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
10+3.47 EUR
100+2.39 EUR
500+1.93 EUR
1000+1.81 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR514DP-T1-RE3 sir514dp.pdf
SIR514DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR514DP-T1-RE3 sir514dp.pdf
SIR514DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.8A (Ta), 84.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
10+3.7 EUR
100+2.55 EUR
500+2.06 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiRA72DP-T1-GE3 sira72dp.pdf
SiRA72DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiRA72DP-T1-GE3 sira72dp.pdf
SiRA72DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIHP6N65E-GE3 sihp6n65e.pdf
SIHP6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4602LDP-T1-RE3 sir4602ldp.pdf
SIR4602LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.74 EUR
6000+0.69 EUR
9000+0.67 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4602LDP-T1-RE3 sir4602ldp.pdf
SIR4602LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR4606DP-T1-GE3 sir4606dp.pdf
SIR4606DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.94 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIR4606DP-T1-GE3 sir4606dp.pdf
SIR4606DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG21N80AEF-GE3 sihg21n80aef.pdf
SIHG21N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+3.59 EUR
100+2.9 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DG417LEDY-T1-GE3
DG417LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Part Status: Active
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHK075N60E-T1-GE3 sihk075n60e.pdf
SIHK075N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIHK075N60E-T1-GE3 sihk075n60e.pdf
SIHK075N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2582 pF @ 100 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.1 EUR
10+10.26 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiSS71DN-T1-GE3 siss71dn.pdf
SiSS71DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 23A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SiSS71DN-T1-GE3 siss71dn.pdf
SiSS71DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 23A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 50 V
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
11+1.99 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.95 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Si3424BDV-T1-GE3 si3424bd.pdf
Si3424BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 57 76 95 114 133 147 148 149 150 151 152 153 154 155 156 157 171 190 198  [ Nächste Seite >> ]