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SUD50N03-12P-GE3 SUD50N03-12P-GE3 Vishay Siliconix SUD50N03-12P-GE3.pdf Description: MOSFET N-CH 30V 16.8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SIHB24N80AE-GE3 SIHB24N80AE-GE3 Vishay Siliconix sihb24n80ae.pdf Description: MOSFET N-CH 800V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
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SQ2318BES-T1_GE3 SQ2318BES-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 8A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DG612EEY-T1-GE4 DG612EEY-T1-GE4 Vishay Siliconix dg611e.pdf Description: IC SW SPST-NOX4 115OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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DG612EEY-T1-GE4 DG612EEY-T1-GE4 Vishay Siliconix dg611e.pdf Description: IC SW SPST-NOX4 115OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
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SI7454FDP-T1-RE3 SI7454FDP-T1-RE3 Vishay Siliconix si7454fdp.pdf Description: N-CHANNEL 100-V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
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SI7454FDP-T1-RE3 SI7454FDP-T1-RE3 Vishay Siliconix si7454fdp.pdf Description: N-CHANNEL 100-V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
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SQ2310ES-T1_BE3 SQ2310ES-T1_BE3 Vishay Siliconix sq2310es.pdf Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Qualification: AEC-Q101
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SQ2310ES-T1_BE3 SQ2310ES-T1_BE3 Vishay Siliconix sq2310es.pdf Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Qualification: AEC-Q101
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SQ1922AEEH-T1_GE3 SQ1922AEEH-T1_GE3 Vishay Siliconix sq1922aeeh.pdf Description: MOSFET 2N-CH 20V 0.85A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SQ1922AEEH-T1_GE3 SQ1922AEEH-T1_GE3 Vishay Siliconix sq1922aeeh.pdf Description: MOSFET 2N-CH 20V 0.85A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SIC638ACD-T1-GE3 SIC638ACD-T1-GE3 Vishay Siliconix sic638.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
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SIC638ACD-T1-GE3 SIC638ACD-T1-GE3 Vishay Siliconix sic638.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
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SISH402DN-T1-GE3 SISH402DN-T1-GE3 Vishay Siliconix sish402dn.pdf Description: MOSFET N-CH 30V 19A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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SISH402DN-T1-GE3 SISH402DN-T1-GE3 Vishay Siliconix sish402dn.pdf Description: MOSFET N-CH 30V 19A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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DG612EEQ-T1-GE3 DG612EEQ-T1-GE3 Vishay Siliconix dg611e.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG612EEY-T1-GE3 DG612EEY-T1-GE3 Vishay Siliconix dg611e.pdf Description: IC ANALOG SWITCH 16SOIC
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SQJQ112E-T1_GE3 SQJQ112E-T1_GE3 Vishay Siliconix sqjq112e.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
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SIC772CD-T1-GE3 SIC772CD-T1-GE3 Vishay Siliconix Description: IC MOSFET DRIVER N-CH 40MLP
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SIC772CD-T1-GE3 SIC772CD-T1-GE3 Vishay Siliconix Description: IC MOSFET DRIVER N-CH 40MLP
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SQJ422EP-T1_BE3 SQJ422EP-T1_BE3 Vishay Siliconix sqj422ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SQJ422EP-T1_BE3 SQJ422EP-T1_BE3 Vishay Siliconix sqj422ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIZ254DT-T1-GE3 SIZ254DT-T1-GE3 Vishay Siliconix siz254dt.pdf Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
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DG418LEDY-GE3 DG418LEDY-GE3 Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active
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DG418LEDY-T1-GE3 DG418LEDY-T1-GE3 Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active
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SQJA42EP-T1_GE3 SQJA42EP-T1_GE3 Vishay Siliconix sqja42ep.pdf Description: MOSFET N-CH 40V 20A PPAK SO-8
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SQJA42EP-T1_GE3 SQJA42EP-T1_GE3 Vishay Siliconix sqja42ep.pdf Description: MOSFET N-CH 40V 20A PPAK SO-8
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IRFR214PBF-BE3 IRFR214PBF-BE3 Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Vishay Siliconix sqj411ep.pdf Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
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SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Vishay Siliconix sqj411ep.pdf Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
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SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix si7110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK1212-8
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SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix si7110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK1212-8
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SQJ142EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 167A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 191W (Tc)
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SQJ142EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 167A PPAK SO-8
Power Dissipation (Max): 191W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
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SQJ500AEP-T1_BE3 SQJ500AEP-T1_BE3 Vishay Siliconix Description: MOSFET N/P CHAN 40V SO8L DUAL
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SQJ500AEP-T1_BE3 SQJ500AEP-T1_BE3 Vishay Siliconix Description: MOSFET N/P CHAN 40V SO8L DUAL
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SIDR104AEP-T1-RE3 SIDR104AEP-T1-RE3 Vishay Siliconix sidr104aep.pdf Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIDR104AEP-T1-RE3 SIDR104AEP-T1-RE3 Vishay Siliconix sidr104aep.pdf Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIDR220DP-T1-GE3 SIDR220DP-T1-GE3 Vishay Siliconix sidr220dp.pdf Description: MOSFET N-CH 25V 87.7A/100A PPAK
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
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SIDR220EP-T1-RE3 SIDR220EP-T1-RE3 Vishay Siliconix sidr220ep.pdf Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIDR220EP-T1-RE3 SIDR220EP-T1-RE3 Vishay Siliconix sidr220ep.pdf Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIDR402EP-T1-RE3 SIDR402EP-T1-RE3 Vishay Siliconix sidr402ep.pdf Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIDR402EP-T1-RE3 SIDR402EP-T1-RE3 Vishay Siliconix sidr402ep.pdf Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIDR608EP-T1-RE3 SIDR608EP-T1-RE3 Vishay Siliconix sidr608ep.pdf Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
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SIDR608EP-T1-RE3 SIDR608EP-T1-RE3 Vishay Siliconix sidr608ep.pdf Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
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SIDR626LDP-T1-RE3 SIDR626LDP-T1-RE3 Vishay Siliconix sidr626ldp.pdf Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
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SIDR626LEP-T1-RE3 SIDR626LEP-T1-RE3 Vishay Siliconix sidr626lep.pdf Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
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SIDR626LEP-T1-RE3 SIDR626LEP-T1-RE3 Vishay Siliconix sidr626lep.pdf Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
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SIDR680ADP-T1-RE3 SIDR680ADP-T1-RE3 Vishay Siliconix sidr680adp.pdf Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar
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SISH892BDN-T1-GE3 SISH892BDN-T1-GE3 Vishay Siliconix sish892bdn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
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SISH892BDN-T1-GE3 SISH892BDN-T1-GE3 Vishay Siliconix sish892bdn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
auf Bestellung 6255 Stücke:
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8+2.62 EUR
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100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
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SIDR140DP-T1-GE3 SIDR140DP-T1-GE3 Vishay Siliconix sidr140dp.pdf Description: MOSFET N-CH 25V 79A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIDR140DP-T1-GE3 SIDR140DP-T1-GE3 Vishay Siliconix sidr140dp.pdf Description: MOSFET N-CH 25V 79A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Produkt ist nicht verfügbar
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SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
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4+5.81 EUR
10+3.77 EUR
100+2.62 EUR
500+2.23 EUR
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SIDR390DP-T1-RE3 SIDR390DP-T1-RE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIDR390DP-T1-RE3 SIDR390DP-T1-RE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIDR610DP-T1-GE3 SIDR610DP-T1-GE3 Vishay Siliconix sidr610dp.pdf Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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SIDR610DP-T1-GE3 SIDR610DP-T1-GE3 Vishay Siliconix sidr610dp.pdf Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQW44N65EF-GE3 SQW44N65EF-GE3 Vishay Siliconix sqw44n65ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 335 Stücke:
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2+17.11 EUR
10+11.69 EUR
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SUD50N03-12P-GE3 SUD50N03-12P-GE3.pdf
SUD50N03-12P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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SIHB24N80AE-GE3 sihb24n80ae.pdf
SIHB24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 140 Stücke:
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SQ2318BES-T1_GE3
SQ2318BES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG612EEY-T1-GE4 dg611e.pdf
DG612EEY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 115OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG612EEY-T1-GE4 dg611e.pdf
DG612EEY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 115OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Number of Circuits: 4
auf Bestellung 514 Stücke:
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8+2.64 EUR
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25+1.74 EUR
100+1.54 EUR
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SI7454FDP-T1-RE3 si7454fdp.pdf
SI7454FDP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
auf Bestellung 39000 Stücke:
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3000+0.77 EUR
6000+0.71 EUR
9000+0.69 EUR
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SI7454FDP-T1-RE3 si7454fdp.pdf
SI7454FDP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
auf Bestellung 41610 Stücke:
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8+2.93 EUR
12+1.84 EUR
100+1.23 EUR
500+0.96 EUR
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SQ2310ES-T1_BE3 sq2310es.pdf
SQ2310ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
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AnzahlPrivatkunde
3000+0.65 EUR
6000+0.61 EUR
9000+0.58 EUR
15000+0.57 EUR
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SQ2310ES-T1_BE3 sq2310es.pdf
SQ2310ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 25057 Stücke:
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9+2.57 EUR
13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
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SQ1922AEEH-T1_GE3 sq1922aeeh.pdf
SQ1922AEEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.85A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 114000 Stücke:
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3000+0.33 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.27 EUR
21000+0.26 EUR
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SQ1922AEEH-T1_GE3 sq1922aeeh.pdf
SQ1922AEEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.85A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 115904 Stücke:
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15+1.43 EUR
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100+0.57 EUR
500+0.44 EUR
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SIC638ACD-T1-GE3 sic638.pdf
SIC638ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIC638ACD-T1-GE3 sic638.pdf
SIC638ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 1049 Stücke:
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5+4.32 EUR
10+3.2 EUR
25+2.93 EUR
100+2.62 EUR
250+2.48 EUR
500+2.39 EUR
1000+2.32 EUR
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SISH402DN-T1-GE3 sish402dn.pdf
SISH402DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.69 EUR
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SISH402DN-T1-GE3 sish402dn.pdf
SISH402DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 5593 Stücke:
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8+2.62 EUR
13+1.65 EUR
100+1.11 EUR
500+0.86 EUR
1000+0.79 EUR
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DG612EEQ-T1-GE3 dg611e.pdf
DG612EEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
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DG612EEY-T1-GE3 dg611e.pdf
DG612EEY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16SOIC
Produkt ist nicht verfügbar
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SQJQ112E-T1_GE3 sqjq112e.pdf
SQJQ112E-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2100 Stücke:
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3+8.69 EUR
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100+4.25 EUR
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SIC772CD-T1-GE3
SIC772CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 40MLP
Produkt ist nicht verfügbar
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SIC772CD-T1-GE3
SIC772CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 40MLP
Produkt ist nicht verfügbar
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SQJ422EP-T1_BE3 sqj422ep.pdf
SQJ422EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+1.31 EUR
6000+1.25 EUR
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SQJ422EP-T1_BE3 sqj422ep.pdf
SQJ422EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 8873 Stücke:
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7+3.17 EUR
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100+2.01 EUR
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SIZ254DT-T1-GE3 siz254dt.pdf
SIZ254DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
auf Bestellung 4146 Stücke:
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6+3.52 EUR
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100+1.49 EUR
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DG418LEDY-GE3
DG418LEDY-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active
Produkt ist nicht verfügbar
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DG418LEDY-T1-GE3
DG418LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active
Produkt ist nicht verfügbar
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SQJA42EP-T1_GE3 sqja42ep.pdf
SQJA42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8
Produkt ist nicht verfügbar
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SQJA42EP-T1_GE3 sqja42ep.pdf
SQJA42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8
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IRFR214PBF-BE3 sihfr214.pdf
IRFR214PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 1286 Stücke:
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12+1.88 EUR
75+1.52 EUR
150+1.21 EUR
525+1.02 EUR
1050+1.01 EUR
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SQJ411EP-T1_GE3 sqj411ep.pdf
SQJ411EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
Produkt ist nicht verfügbar
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SQJ411EP-T1_GE3 sqj411ep.pdf
SQJ411EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
auf Bestellung 2994 Stücke:
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AnzahlPrivatkunde
9+2.48 EUR
11+2.01 EUR
100+1.57 EUR
500+1.33 EUR
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SI7110DN-T1-GE3 si7110dn.pdf
SI7110DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Produkt ist nicht verfügbar
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SI7110DN-T1-GE3 si7110dn.pdf
SI7110DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
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5+4.46 EUR
10+4.01 EUR
100+3.22 EUR
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SQJ142EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 191W (Tc)
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.87 EUR
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SQJ142EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Power Dissipation (Max): 191W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
13+1.71 EUR
100+1.33 EUR
500+1.13 EUR
1000+0.92 EUR
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SQJ500AEP-T1_BE3
SQJ500AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL
Produkt ist nicht verfügbar
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SQJ500AEP-T1_BE3
SQJ500AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL
Produkt ist nicht verfügbar
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SIDR104AEP-T1-RE3 sidr104aep.pdf
SIDR104AEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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SIDR104AEP-T1-RE3 sidr104aep.pdf
SIDR104AEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 8003 Stücke:
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10+4.8 EUR
100+3.37 EUR
500+3.03 EUR
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SIDR220DP-T1-GE3 sidr220dp.pdf
SIDR220DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 87.7A/100A PPAK
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
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SIDR220EP-T1-RE3 sidr220ep.pdf
SIDR220EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIDR220EP-T1-RE3 sidr220ep.pdf
SIDR220EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIDR402EP-T1-RE3 sidr402ep.pdf
SIDR402EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIDR402EP-T1-RE3 sidr402ep.pdf
SIDR402EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIDR608EP-T1-RE3 sidr608ep.pdf
SIDR608EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
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SIDR608EP-T1-RE3 sidr608ep.pdf
SIDR608EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
auf Bestellung 5990 Stücke:
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100+3.24 EUR
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SIDR626LDP-T1-RE3 sidr626ldp.pdf
SIDR626LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
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SIDR626LEP-T1-RE3 sidr626lep.pdf
SIDR626LEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
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SIDR626LEP-T1-RE3 sidr626lep.pdf
SIDR626LEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
auf Bestellung 4168 Stücke:
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10+6.03 EUR
100+4.28 EUR
500+3.75 EUR
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SIDR680ADP-T1-RE3 sidr680adp.pdf
SIDR680ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar
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SISH892BDN-T1-GE3 sish892bdn.pdf
SISH892BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
auf Bestellung 6000 Stücke:
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SISH892BDN-T1-GE3 sish892bdn.pdf
SISH892BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
auf Bestellung 6255 Stücke:
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100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
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SIDR140DP-T1-GE3 sidr140dp.pdf
SIDR140DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 79A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIDR140DP-T1-GE3 sidr140dp.pdf
SIDR140DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 79A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIDR390DP-T1-GE3 sidr390dp.pdf
SIDR390DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Produkt ist nicht verfügbar
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SIDR390DP-T1-GE3 sidr390dp.pdf
SIDR390DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.81 EUR
10+3.77 EUR
100+2.62 EUR
500+2.23 EUR
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SIDR390DP-T1-RE3 sidr390dp.pdf
SIDR390DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIDR390DP-T1-RE3 sidr390dp.pdf
SIDR390DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIDR610DP-T1-GE3 sidr610dp.pdf
SIDR610DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SIDR610DP-T1-GE3 sidr610dp.pdf
SIDR610DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQW44N65EF-GE3 sqw44n65ef.pdf
SQW44N65EF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.11 EUR
10+11.69 EUR
Mindestbestellmenge: 2 Stücke
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