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SIA477EDJ-T1-GE3 SIA477EDJ-T1-GE3 Vishay Siliconix SiA477EDJ_Dec24_2012.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
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SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay Siliconix sihp17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
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SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Vishay Siliconix sihg17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
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SQJA78EP-T1_GE3 SQJA78EP-T1_GE3 Vishay Siliconix sqja78ep.pdf Description: MOSFET N-CH 80V 72A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQJA78EP-T1_GE3 SQJA78EP-T1_GE3 Vishay Siliconix sqja78ep.pdf Description: MOSFET N-CH 80V 72A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQ1922EEH-T1_GE3 SQ1922EEH-T1_GE3 Vishay Siliconix sq1922eeh.pdf Description: MOSFET 2N-CH 20V 0.84A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SQ1922EEH-T1_GE3 SQ1922EEH-T1_GE3 Vishay Siliconix sq1922eeh.pdf Description: MOSFET 2N-CH 20V 0.84A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SQ1470AEH-T1_GE3 SQ1470AEH-T1_GE3 Vishay Siliconix sq1470aeh.pdf Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Qualification: AEC-Q101
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SQ1470AEH-T1_GE3 SQ1470AEH-T1_GE3 Vishay Siliconix sq1470aeh.pdf Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Qualification: AEC-Q101
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SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 Vishay Siliconix sqs481enw.pdf Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 75 V
Qualification: AEC-Q101
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SQS481ENW-T1_GE3 SQS481ENW-T1_GE3 Vishay Siliconix sqs481enw.pdf Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 75 V
Qualification: AEC-Q101
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500+0.70 EUR
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SIA938DJT-T1-GE3 SIA938DJT-T1-GE3 Vishay Siliconix sia938djt.pdf Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA938DJT-T1-GE3 SIA938DJT-T1-GE3 Vishay Siliconix sia938djt.pdf Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SiR690DP-T1-GE3 SiR690DP-T1-GE3 Vishay Siliconix sir690dp.pdf Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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SiR690DP-T1-GE3 SiR690DP-T1-GE3 Vishay Siliconix sir690dp.pdf Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST DUAL 8SOIC
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DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST DUAL 8SOIC
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SISF06DN-T1-GE3 SISF06DN-T1-GE3 Vishay Siliconix sisf06dn.pdf Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
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SISF06DN-T1-GE3 SISF06DN-T1-GE3 Vishay Siliconix sisf06dn.pdf Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
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SIDR680ADP-T1-RE3 SIDR680ADP-T1-RE3 Vishay Siliconix sidr680adp.pdf Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
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DG2723DN-T1-GE4 Vishay Siliconix dg2723.pdf Description: IC SWITCH DUAL SPDT 10-MINIQFN
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SQJ147ELP-T1_GE3 SQJ147ELP-T1_GE3 Vishay Siliconix sqj147elp.pdf Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101
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500+0.82 EUR
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SI7469ADP-T1-RE3 SI7469ADP-T1-RE3 Vishay Siliconix si7469adp.pdf Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
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SIR681DP-T1-RE3 SIR681DP-T1-RE3 Vishay Siliconix sir681dp.pdf Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
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SUM90N04-3M3P-E3 SUM90N04-3M3P-E3 Vishay Siliconix sum90n043m3p.pdf Description: MOSFET N-CH 40V 90A TO263
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SUM90N04-3M3P-E3 SUM90N04-3M3P-E3 Vishay Siliconix sum90n043m3p.pdf Description: MOSFET N-CH 40V 90A TO263
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SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix sis932edn.pdf Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
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SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix sis932edn.pdf Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 1063 Stücke:
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18+1.00 EUR
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SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 Vishay Siliconix sqja34ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
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SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 Vishay Siliconix sqja34ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
auf Bestellung 970 Stücke:
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SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
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SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 3029 Stücke:
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28+0.65 EUR
33+0.54 EUR
100+0.46 EUR
500+0.41 EUR
1000+0.37 EUR
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SIZ256DT-T1-GE3 SIZ256DT-T1-GE3 Vishay Siliconix siz256dt.pdf Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
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SIRA20BDP-T1-GE3 SIRA20BDP-T1-GE3 Vishay Siliconix sira20bdp.pdf Description: MOSFET N-CH 25V 82A/335A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
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7+2.78 EUR
10+2.28 EUR
100+1.77 EUR
500+1.50 EUR
1000+1.22 EUR
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SQJ136ELP-T1_GE3 SQJ136ELP-T1_GE3 Vishay Siliconix sqj136elp.pdf Description: MOSFET N-CH 40V 350A PPAK SO-8
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SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 Vishay Siliconix siz340bdt.pdf Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 7010 Stücke:
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3000+0.47 EUR
6000+0.44 EUR
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SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 Vishay Siliconix siz340bdt.pdf Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 7463 Stücke:
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10+1.88 EUR
15+1.18 EUR
100+0.77 EUR
500+0.60 EUR
1000+0.54 EUR
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SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 Vishay Siliconix si7252adp.pdf Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
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3000+1.15 EUR
6000+1.12 EUR
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SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 Vishay Siliconix si7252adp.pdf Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 8266 Stücke:
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5+4.00 EUR
10+2.57 EUR
100+1.75 EUR
500+1.40 EUR
1000+1.29 EUR
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SQJB60EP-T2_GE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJ910AEP-T2_GE3 Vishay Siliconix sqj910aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
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SQR100N04-3M8R_GE3 Vishay Siliconix Description: N-CHANNEL 40-V (D-S) 175C MOSFET
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SQC40016E_DFFR Vishay Siliconix Description: N-CHANNEL 40-V (D-S) MOSFET
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SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix sir106dp.pdf Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
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3000+1.29 EUR
6000+1.24 EUR
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SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix sir106dp.pdf Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6804 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+2.38 EUR
100+1.89 EUR
500+1.60 EUR
1000+1.36 EUR
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SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix sir640adp.pdf Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
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SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix sir640adp.pdf Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
auf Bestellung 2 Stücke:
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SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 4000 Stücke:
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2000+1.57 EUR
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SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 6310 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
10+2.90 EUR
100+2.30 EUR
500+1.95 EUR
1000+1.65 EUR
Mindestbestellmenge: 6
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SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix sud35n10-26p.pdf Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
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SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix sud35n10-26p.pdf Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 1152 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.98 EUR
100+2.29 EUR
500+1.85 EUR
1000+1.63 EUR
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SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 Vishay Siliconix si7322adn.pdf Description: MOSFET N-CH 100V 15.1A PPAK
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SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 Vishay Siliconix si7322adn.pdf Description: MOSFET N-CH 100V 15.1A PPAK
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SISA72DN-T1-GE3 SISA72DN-T1-GE3 Vishay Siliconix sisa72dn.pdf Description: MOSFET N-CH 40V 60A PPAK1212-8
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SISA72DN-T1-GE3 SISA72DN-T1-GE3 Vishay Siliconix sisa72dn.pdf Description: MOSFET N-CH 40V 60A PPAK1212-8
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SISS92DN-T1-GE3 SISS92DN-T1-GE3 Vishay Siliconix siss92dn.pdf Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
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SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay Siliconix siha24n80ae.pdf Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
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SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay Siliconix sihg24n80ae.pdf Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
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IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
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IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 1869 Stücke:
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SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf
SIA477EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
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SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
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SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 294 Stücke:
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SQJA78EP-T1_GE3 sqja78ep.pdf
SQJA78EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 72A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQJA78EP-T1_GE3 sqja78ep.pdf
SQJA78EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 72A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
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7+2.71 EUR
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100+1.79 EUR
500+1.52 EUR
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SQ1922EEH-T1_GE3 sq1922eeh.pdf
SQ1922EEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.84A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.28 EUR
6000+0.26 EUR
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SQ1922EEH-T1_GE3 sq1922eeh.pdf
SQ1922EEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.84A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 8878 Stücke:
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Anzahl Preis
15+1.21 EUR
24+0.75 EUR
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500+0.37 EUR
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SQ1470AEH-T1_GE3 sq1470aeh.pdf
SQ1470AEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
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3000+0.29 EUR
6000+0.27 EUR
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SQ1470AEH-T1_GE3 sq1470aeh.pdf
SQ1470AEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 268633 Stücke:
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Anzahl Preis
17+1.06 EUR
24+0.76 EUR
100+0.56 EUR
500+0.43 EUR
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SQS481ENW-T1_GE3 sqs481enw.pdf
SQS481ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.56 EUR
6000+0.52 EUR
9000+0.50 EUR
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SQS481ENW-T1_GE3 sqs481enw.pdf
SQS481ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.095Ohm @ 5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 9980 Stücke:
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Anzahl Preis
10+1.76 EUR
15+1.19 EUR
100+0.88 EUR
500+0.70 EUR
1000+0.64 EUR
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SIA938DJT-T1-GE3 sia938djt.pdf
SIA938DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.32 EUR
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SIA938DJT-T1-GE3 sia938djt.pdf
SIA938DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 17569 Stücke:
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Anzahl Preis
12+1.57 EUR
19+0.98 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
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SiR690DP-T1-GE3 sir690dp.pdf
SiR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+1.11 EUR
6000+1.09 EUR
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SiR690DP-T1-GE3 sir690dp.pdf
SiR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
auf Bestellung 13342 Stücke:
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Anzahl Preis
6+3.03 EUR
10+2.15 EUR
100+1.61 EUR
500+1.36 EUR
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DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
Produkt ist nicht verfügbar
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DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
auf Bestellung 2389 Stücke:
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SISF06DN-T1-GE3 sisf06dn.pdf
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.78 EUR
6000+0.72 EUR
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SISF06DN-T1-GE3 sisf06dn.pdf
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
auf Bestellung 13556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.83 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.88 EUR
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SIDR680ADP-T1-RE3 sidr680adp.pdf
SIDR680ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar
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DG2723DN-T1-GE4 dg2723.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10-MINIQFN
Produkt ist nicht verfügbar
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SQJ147ELP-T1_GE3 sqj147elp.pdf
SQJ147ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
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SI7469ADP-T1-RE3 si7469adp.pdf
SI7469ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar
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SIR681DP-T1-RE3 sir681dp.pdf
SIR681DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
Produkt ist nicht verfügbar
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SUM90N04-3M3P-E3 sum90n043m3p.pdf
SUM90N04-3M3P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO263
Produkt ist nicht verfügbar
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SUM90N04-3M3P-E3 sum90n043m3p.pdf
SUM90N04-3M3P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO263
Produkt ist nicht verfügbar
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SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
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SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 1063 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.85 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.37 EUR
Mindestbestellmenge: 18
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SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Produkt ist nicht verfügbar
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SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
auf Bestellung 970 Stücke:
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SI2319CDS-T1-BE3 si2319cd.pdf
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
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SI2319CDS-T1-BE3 si2319cd.pdf
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 3029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
33+0.54 EUR
100+0.46 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 28
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SIZ256DT-T1-GE3 siz256dt.pdf
SIZ256DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Produkt ist nicht verfügbar
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SIRA20BDP-T1-GE3 sira20bdp.pdf
SIRA20BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
auf Bestellung 10920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.28 EUR
100+1.77 EUR
500+1.50 EUR
1000+1.22 EUR
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SQJ136ELP-T1_GE3 sqj136elp.pdf
SQJ136ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Produkt ist nicht verfügbar
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SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 7010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.44 EUR
Mindestbestellmenge: 3000
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SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 7463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.77 EUR
500+0.60 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.15 EUR
6000+1.12 EUR
Mindestbestellmenge: 3000
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SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 8266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.00 EUR
10+2.57 EUR
100+1.75 EUR
500+1.40 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
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SQJB60EP-T2_GE3 sqjb60ep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJ910AEP-T2_GE3 sqj910aep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQR100N04-3M8R_GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Produkt ist nicht verfügbar
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SQC40016E_DFFR
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
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SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.29 EUR
6000+1.24 EUR
Mindestbestellmenge: 3000
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SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.38 EUR
100+1.89 EUR
500+1.60 EUR
1000+1.36 EUR
Mindestbestellmenge: 7
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SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Produkt ist nicht verfügbar
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SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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SUD15N15-95-BE3 sud15n15.pdf
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.57 EUR
Mindestbestellmenge: 2000
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SUD15N15-95-BE3 sud15n15.pdf
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 6310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.90 EUR
100+2.30 EUR
500+1.95 EUR
1000+1.65 EUR
Mindestbestellmenge: 6
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SUD35N10-26P-BE3 sud35n10-26p.pdf
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Produkt ist nicht verfügbar
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SUD35N10-26P-BE3 sud35n10-26p.pdf
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 1152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.98 EUR
100+2.29 EUR
500+1.85 EUR
1000+1.63 EUR
Mindestbestellmenge: 5
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SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
Produkt ist nicht verfügbar
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SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
auf Bestellung 1241 Stücke:
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SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
auf Bestellung 3000 Stücke:
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SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
auf Bestellung 5424 Stücke:
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SISS92DN-T1-GE3 siss92dn.pdf
SISS92DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Produkt ist nicht verfügbar
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SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
50+2.73 EUR
100+2.65 EUR
500+2.63 EUR
Mindestbestellmenge: 5
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SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
25+4.39 EUR
100+3.65 EUR
Mindestbestellmenge: 3
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IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.10 EUR
100+1.61 EUR
500+1.28 EUR
1000+1.16 EUR
Mindestbestellmenge: 7
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